SPICE MODEL of TPCF8A01 (Professional+BDS+SBDS Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCF8A01 MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Diode / Schottky Barrier Diode (Standard)


POWER MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


Body Diode Model

Pspice model parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time


V_V1

0V 1.0V 2.0V 3.0V 4.0V 5.0V

I(V2)

0A

2A

4A

6A

8A

10A

OPEN

V310Vdc

OPEN

OPENV2

0Vdc

U5

0

V110Vdc

0

OPENOPEN

R1

100M EG

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.10 1.30 1.30 -0.32

0.20 1.33 1.33 0.07

0.50 1.40 1.40 0.09

1.00 1.49 1.48 -0.51

2.00 1.60 1.60 0.00

5.00 1.84 1.84 0.19

10.00 2.15 2.13 -0.73


OPEN

U2

TPCF8A01

0

OPEN

OPEN

VD10Vdc

VG2.5Vdc

V1

0Vdc

0

OPEN

OPEN

R1

100MEG

Id-Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=1.5A, VGS=2.5V Measurement Simulation Error (%)

RDS (on) 50.00 m 50.00 m 0.00


-

+W1

ION = 0uAIOFF = 1mAW

V116Vdc

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

U2

TPCF8A01

R1

100MEG

0

OPEN

OPEN

I23Adc

0

OPEN

D1

Dbreak

OPEN

OPEN

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=16V,ID=3A ,VGS=5V

Measurement Simulation Error (%)

Qgs 1.3 nC 1.2912 nC -0.677

Qgd 2.1 nC 2.0812 nC -0.895

Qg 7.5 nC 7.5000 nC 0.000

VDD=16V

4V

8V


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.50 55.00 54.65 -0.64

1.00 45.00 45.70 1.56

2.00 36.00 35.50 -1.39

5.00 23.00 22.93 -0.30

10.00 15.00 15.53 3.53

20.00 10.00 10.00 0.00

Simulation

Measurement


Time

5.00us 5.05us 5.09us

V(2) V(3)/2

0V

2.0V

4.0V

6.0V

7.0V

0

OPEN

L2

0.03uH

U8

OPEN

0

R1

4.7

V1

TD = 5u

TF = 7nPW = 5uPER = 100u

V1 = 0

TR = 6n

V2 = 10

2

L1

0.03uH

VDD

10

OPEN

R2

4.7

3

0

Rop

100MEG

OPEN

0

OPEN

V3

0Vdc

0

RL

6.67

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=3A, VDD=15V VGS=0/5V

Measurement Simulation Error(%)

td (on) 7.50 ns 7.50 ns 0.00

VGS

ID

VGS = 5V

VDS = 10V


OPEN

U2

TPCF8A01

0

OPEN

OPEN

VD10Vdc

VG2.5Vdc

V1

0Vdc

0

OPEN

OPEN

R1

100MEG

Output Characteristic


Evaluation circuit

VGS=1.4V

1.5V

1.6V

1.7V

1.8V

1.9V

2.0V

2.1V

3.0V 10


BODY DIODE SPICE MODEL

Body Diode Model

Pspice model

parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time

*$ *PART NUMBER: TPCF8A01 *MANUFACTURER: TOSHIBA *VDSS=20V, ID=3A *All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 .MODEL D8A01 D + IS=2.5659E-6 + N=2.1585 + RS=13.923E-3 + IKF=3.6193 + CJO=3E-12 + ISR=0 + BV=20 + IBV=1E-6 *****BODY DIODE STANDARD MODEL****

*$


0

V1

0Vdc

OPEN

OPEN

OPEN

R2

0.01mR1

100MEG

0

OPEN

OPEN

U2

TPCF8A01

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.10 0.60 0.59 -0.50

0.20 0.63 0.63 0.48

0.50 0.69 0.69 0.14

1.00 0.74 0.74 0.00

2.00 0.80 0.80 0.00

5.00 0.91 0.91 0.44

10.00 1.05 1.05 -0.10


R1

100MEG

U2

TPCF8A01

OPEN

V2

TD = 0

TF = 10nPW = 20uPER = 50u

V1 = -10

TR = 10n

V2 = 10.6

OPEN

OPEN

0

R2

50

OPENOPEN

0

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trr=trj+trb 17.00 ns 17.13 ns 0.78


Reverse Recovery Characteristic Reference

Trj=6.6(ns) Trb=10.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


ESD PROTECTION DIODE SPICE MODEL

*$ *PART NUMBER: TPCF8A01 *MANUFACTURER: TOSHIBA *VGSS=12V *All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 .SUBCKT DZ8A01 1 2 D1 1 3 DZ D2 2 3 DZ1 .MODEL DZ D + IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 CJO=3E-12 + RS=333 XTI=0 EG=0 .MODEL DZ1 D + IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 RS=0 CJO=3E-12 + XTI=0 EG=0 .ENDS

*$


OPEN

V1

0Vdc

OPEN

U2

TPCF8A01

R2

0.01m

OPEN

0

OPEN

OPEN

R1

100MEG

OPEN OPEN

0

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference


*$ .MODEL DSB8A01 D + IS=88.198E-9 + N=1.0182 + RS=65.469E-3 + IKF=212.80 + EG=.69 + CJO=267.49E-12 + M=.48544 + VJ=.3905 + ISR=0 + BV=20 + IBV=2.5000E-6 + TT=3E-12

*****SBD MODEL*****

DIODE SCHOTTKY SPICE MODEL


OPEN

0

R1

100MEG

U2

TPCF8A01

V1

0Vdc

R2

0.01m

0

OPEN

OPEN

OPEN

OPEN

Forward Current Characteristic of Schottky Barrier Diode


Evaluation Circuit



Simulation Result

Ifwd (A) Vfwd (V)

%Error Measurement Simulation

0.01 0.31 0.31 0.59

0.02 0.33 0.33 0.18

0.05 0.36 0.35 -0.87

0.10 0.38 0.37 -0.43

0.20 0.40 0.40 0.10

0.50 0.45 0.44 -0.63

1.00 0.49 0.49 0.67

2.00 0.57 0.58 1.25

5.00 0.80 0.80 -0.29


OPENOPEN

U2

TPCF8A01

OPEN

V1

TD = 0

TF = 10nPW = 50uPER = 100u

V1 = 0

TR = 1u

V2 = 20

0

V2

0Vdc

OPEN

R1

100MEG

0

OPEN

Junction Capacitance Characteristic of Schottky Barrier Diode Circuit Simulation Result

Evaluation Circuit



Simulation Result

Vrev(V)

Cj(pF)

%Error Measurement Simulation

1.00 145.00 143.57 -0.99

2.00 110.00 110.40 0.37

5.00 75.00 74.44 -0.75

10.00 54.00 54.12 0.22

20.00 40.00 39.14 -2.15

Date post:	05-Dec-2014
Category:	Technology
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SPICE MODEL of TPCF8A01 (Professional+BDS+SBDS Model) in SPICE PARK

Technology