SSM3K15FS (professional Model) PSpice Model (Free SPICE Model)

All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

COMPONENTS: MOSFET (Professional) PART NUMBER: SSM3K15FS MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode

Device Modeling Report

.

Bee Technologies Inc.


2

SSM3K15FS

1

3

SPICE MODEL

Circuit Configuration

*$ *PART NUMBER: SSM3K15FS *MANUFACTURER: TOSHIBA *VDSS=30V, ID=100mA *All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 .SUBCKT SSM3K15FS 1 2 3 X_U1 3 1 2 MSSM3K15FS_PRO X_U2 2 3 DSSM3K15FS_PRO X_U3 1 2 DZSSM3K15FS .ENDS *****DEVICE PACKAGE MODEL*****


.SUBCKT MSSM3K15FS_PRO D G S CGD 1 G 1p R1 1 G 10MEG S1 1 D G D SMOD1 D1 2 D DGD R2 D 2 10MEG S2 2 G D G SMOD1 M1 D G S S MSSM3K15FS .MODEL SMOD1 VSWITCH( VON=0V VOFF=-10mV RON=1m ROFF=1E12) .MODEL DGD D ( CJO=7.8416E-12 M=.42015 VJ=90.500E-3 .MODEL MSSM3K15FS NMOS + LEVEL=3 L=720.00E-9 W=.2192 KP=732.66E-9 RS=10.000E-3 + RD=.3567 VTO=1.5453 RDS=1.0000E6 TOX=40.000E-9 + CGSO=7E-15 CGDO=45E-12 + CBD=1e-009 MJ=.39887 PB=.93267 RG=418 + NFS=1.0E+12 ETA=0.01 + IS=1E-15 N=5 RB=1 .ENDS *****MOSFET PROFESSIONAL MODEL*****

S

DGD

G

R2

10MEGR1

10M CGD

+

-

+

-

S1

S

D

Q1

+

-

+

-

S2

S

MOSFET SPICE MODE

Equivalent Circuit


MOSFET MODEL PARAMETERS

PSpice model

parameters Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0

0.1

0.2

0.3

0.4

0 0.05 0.1 0.15 0.2

DRIAN CURRENT ID (A)

TRANSCO

NDUCTANCE G

fs(s

)

Measurement

S imulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Gfs(S)

Id(A) Measurement Simulation

Error(%)

0.005 0.0476 0.0481 0.96

0.01 0.0667 0.0690 3.45

0.02 0.1000 0.0966 -3.38

0.05 0.1515 0.1524 0.61

0.1 0.2128 0.2155 1.29

0.2 0.3077 0.3044 -1.07


0

SSM3K15FS

VGS

Vsense

VDS3Vdc

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

V_VGS

0V 1.0V 2.0V 3.0V 4.0V

I(Vsense)

10mA

100mA

5.0mA

500mA


0.001

0.01

0.1

1

1 2 3

GATE-SOURCE VOLTAGE VGS (V)

DRAIN

CURRENT ID (A)

MeasurementSimulation

Comparison Graph Circuit Simulation Result

Simulation Result

VGS(V) ID(A)

Measurement Simulation Error (%)

0.005 1.6400 1.6808 2.4878

0.01 1.7400 1.7689 1.6609

0.02 1.8900 1.8931 0.1640

0.05 2.1400 2.1400 0.0000

0.1 2.4000 2.4184 0.7667

0.2 2.8000 2.8124 0.4429


0

Vsense

VDSSSM3K15FS

VGS4Vdc

V_VDS

0V 20mV 40mV 60mV 80mV 100mVI(Vsense)

0A

2mA

4mA

6mA

8mA

10mA

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=10mA, VGS=4V Measurement Simulation Error (%)

RDS (on) 2.2 ΩΩΩΩ 2.1997 ΩΩΩΩ -0.01


VD24Vdc

I2TD = 0

SSM3K15FS

DbreakD1

I1

100mAdc

Vsense

0

-

+

W1

ION = 0AIOFF = 1mA

W

Time*1mA

0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n 2.0n 2.2n

V(W1:3)

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=24V, ID=100mA


Qgs 0.2250 nC 0.2305 nC 2.4640

Qgd 0.2400 nC 0.24045 nC 0.1875

Qg 1.6000 nC 1.6000 nC 0.0000


0

1

2

3

4

5

6

7

8

9

10

0 1 2

GATE CHARGE Qg(nc)

GATE V

OLTAGE V

gVDD=24V

Gate Charge Characteristic Reference


Capacitance Characteristic

Simulation Result

Cbd(pF) VDS(V)

Measurement Simulation Error(%)

0.1 10.0000 9.9373 -0.6270

0.2 9.5000 9.5740 0.7789

0.5 8.7000 8.7257 0.2954

1 7.8000 7.7356 -0.8256

2 6.5000 6.5580 0.8923

5 5.0000 4.9462 -1.0760

10 3.8500 3.8749 0.6468

20 3.0000 2.9900 -0.3333

Simulation

Measurement


V1

TD = 1u

TF = 10n

PW = 10u

PER = 10m

V1 = 0

TR = 10n

V2 = 10

Vsense

U2SSM3K15FSR1

50

L3

30nH

2

VD5Vdc

3RL

500

R2

50

0

Time

4.8us 4.9us 5.0us 5.1us 5.2us 5.3us 5.4us

V(L3:2)*2 V(3)*2

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

11V

12V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=10mA, VDD= 5V, VGS=0/5V

Measurement Simulation Error(%)

Td(on) 50.000 ns 50.015 ns 0.03


V_VDS

0V 0.25V 0.50V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V

I(Vsense)

0A

50mA

100mA

150mA

200mA

U1SSM3K15FS

0

VDS

VGS

Vsense

Output Characteristic


Evaluation circuit

VGS= 2.1V

2.3V

2.5 V

2.7V

3.0V 4.0V


BODY DIODE SPICE MODEL

.SUBCKT DSSM3K15FS_PRO A K R_R2 5 6 100 R_R1 3 4 1 C_C1 5 6 166p E_E1 5 K 3 4 1 S_S1 6 K 4 K _S1 RS_S1 4 K 1G .MODEL _S1 VSWITCH Roff=50MEG Ron=1m Voff=90mV Von=100mV G_G1 K A VALUE V(3,4)-V(5,6) D_D1 2 K DSSM3K15FS D_D2 4 K DSSM3K15FS F_F1 K 3 VF_F1 1 VF_F1 A 2 0V .MODEL DSSM3K15FS D + IS=198.62E-12 N=1.4890 RS=.31637 IKF=46.038E-3 + CJO=3E-12 BV=30 IBV=1.0000E-6 TT=35.4E-9 .ENDS*****BODY DIODE PROFESSIONAL MODEL****


R1

0.01m

V1

0Vdc

0

SSM3K15FS

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V

I(R1)

0A

50mA

100mA

150mA

200mA

250mA

Forward Current Characteristic


Evaluation Circuit


0

0.05

0.1

0.15

0.2

0.25

0 0.4 0.8 1.2

SOURCE-DRAIN VOLTAGE VSD (V)

DRAIN

REVERSE C

URRENT IDR (A) Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

VSD(V) IDR(A)

Measurement Simulation %Error

0.005 0.6600 0.6599 -0.0152

0.010 0.6900 0.6902 0.0290

0.020 0.7250 0.7241 -0.1241

0.050 0.7800 0.7807 0.0897

0.100 0.8400 0.8395 -0.0595

0.200 0.9200 0.9200 0.0000


Time

1.00us 1.20us0.85us 1.35usI(R1)

-400mA

-200mA

0A

200mA

400mA

Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 24.000 ns 24.010 ns 0.0417

trb 37.600 ns 37.760 ns 0.4255

trr 61.600 ns 61.790 ns 0.3084

U1DSSM3K15FS_PRO

V1

TD = 10n

TF = 5.7ns

PW = 1us

PER = 50us

V1 = -9.3V

TR = 6ns

V2 = 10.8V

R1 50

0


Reverse Recovery Characteristic (Body Diode) Reference

Trj= (24.ns) Trb= (37.6ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


ESD PROTECTION DIODE SPICE MODEL

.subckt DZSSM3K15FS 1 2 D2 1 3 DZ2 D1 2 3 DZ1 .model DZ1 D + IS=0.01p N=0.1 ISR=0 CJO=0.3E-12 + BV=26.275 IBV=0.00095 RS=588.89 .model DZ2 D + IS=0.01p N=0.1 ISR=0 CJO=0.3E-12 + BV=26.275 IBV=0.00095 RS=0 .ENDS *****ESD Protection Diode MODEL*****


V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

Zener Voltage Characteristic


Evaluation Circuit

SSM3K15FS

0

V1

0Vdc

R1

0.01m

IOPEN

0Adc


Zener Voltage Characteristic Reference

Date post:	16-Jul-2015
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SSM3K15FS (professional Model) PSpice Model (Free SPICE Model)

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