Subject Index of Volume 11

Ž .Diamond and Related Materials 11 2002 1310�1327

Subject Index of Volume 11

3H centrePhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

60 kW CVD² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596

6H�SiCŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509

a-CAb initio generation of amorphous carbon structures, 1015Soft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068x

a-C:N nano-rodsMorphology and characterization of highly nitrogenated, aligned,

amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193

A-defectDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872

AbradingAbrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646

AcetylenePlasma chemistry during deposition of a-C:H, 989

AdhesionHigh temperature diffusion chromizing as a successful method for

CVD-diamond coating of steel, 757

Adhesion strengthQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716

AdsorbatesRole of adsorbates in field emission from nanotubes, 769

AdsorptionElectron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780

AlNReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413

AmorphousPreparation and properties of amorphous carbon oxy-nitride films

made by the layer-by-layer method, 1210Response time of photoconductivity of amorphous carbon nitride

films prepared by a nitrogen radical sputter method, 1215

High resistivity and low dielectric constant amorphous carbonnitride films: application to low-k materials for ULSI, 1219

Amorphous carbonCharacteristics of hydrogenated amorphous carbon films deposited

by large-area microwave-sustained surface wave plasma, 976Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphouscarbon thin films, 1005

Optical strength in UV region of amorphous carbon, 1106Mechanical properties and performance of magnetron-sputtered

graded diamond-like carbon films with and withoutmetal additions, 1139

Ž .Micro-structural analysis of carbon nitride CN film preparedxby ion beam assisted magnetron sputtering, 1205

Amorphous diamondAb initio generation of amorphous carbon structures, 1015

Amorphous hydrogenated carbonGrowth mechanism of amorphous hydrogenated carbon, 969Low energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Multi-band structure of amorphous carbon luminescence, 1115

Amorphous semiconductorsAb initio generation of amorphous carbon structures, 1015

Amorphous-carbonSubstrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227

Anisotropic etchingSmooth and high-rate reactive ion etching of diamond, 824

AnnealingNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623Influence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263Synthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272

ApplicationsElectrical properties of graphite�homoepitaxial diamond contact,

451Abrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646Diamond cantilever with integrated tip for nanomachining, 667

Elsevier Science B.V.Ž .PII: S 0 9 2 5 - 9 6 3 5 0 2 0 0 0 6 5 - 1

Subject Index of Volume 11 1311

Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and relatedSchottky barriers, 851

GaN-based heterostructures for sensor applications, 886

Arc dischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc

discharge technique, 914

Atmospheric pressureNew technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472

Atomic force microscopyDiamond cantilever with integrated tip for nanomachining, 667

Atomic structureAb initio generation of amorphous carbon structures, 1015

B�C�NSynthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290

B-dopingDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316

Backscattering spectrometryInvestigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239

Band structureDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872Multi-band structure of amorphous carbon luminescence, 1115

BiasŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma

chemical vapor deposition, 523Substrate bias effect on amorphous nitrogenated carbon films


Bias assisted growthBias assisted growth on diamond single crystals: the defect

formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectro-scopy, 487

Bias enhanced nucleationAnalysis of the total carbon deposition during the bias enhanced

Ž . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3493

Bidimensional electron gasGaN-based heterostructures for sensor applications, 886

Black diamondBlack diamond: a new material for active electronic devices, 396

BondingOptical brazing technique for bonding diamond films to zinc

sulfide, 753Determination of bonding in diamond-like carbon by Raman

spectroscopy, 1053

Bonding structureOn the bonding structure of hydrogenated carbon nitrides grown

by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161

Deposition of amorphous CN by d.c. and rf plasma sputteringxusing a rf radical nitrogen beam source, 1178

BoronInvestigation on boron-doped CVD samples, 338

Boron carbon nitrideCharacterization of boron carbon nitride films with a low

dielectric constant, 985

Boron dopingDetection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662Characterisation of electron irradiated boron-doped diamond, 681Etching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828

Boron nitrideHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Spectroscopic ellipsometry studies on BN films from IR to vacuum

UV energy region, 1281Precursor design in c-BN growth, 1300

Bowing parameterOptical investigation of Al Ga �xN epitaxial films grown onx 1

AlN buffer layers, 892

Brillouin scatteringElastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062

Buffer layerŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901

C N3 4XPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x1149

Effect of plasma parameters on the structure of CN layersxdeposited by DC magnetron sputtering, 1200

Pulsed laser deposition of CN films: role of r.f. nitrogenxplasma activation for the film structure formation, 1223

C fullerene60Carbon films obtained from a C fullerene ion beam, 96460

CarbideTransmission electron microscopy studies of nanofibers formed on

Fe C -carbide, 9317 3From �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268

CarbidesX-Ray absorption study of the bonding structure of BCN

compounds enriched in carbon by CH ion assistance, 12954

CarbonVery adherent CVD diamond film on modified molybdenum sur-

face, 532Electrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657Field emission from carbon films deposited on stainless steel

substrate, 784Defect induced lowering of work function in graphite-like

materials, 813Low temperature plasma chemical vapour deposition of carbon

nanotubes, 918Growth mechanism and properties of the large area well-aligned

carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922

Atomic and electronic structures of Si-included C cluster74studied by HREM and molecular orbital calculations, 935


Characteristics of nickel-containing carbon films deposited usingelectron cyclotron resonance CVD, 1031

Preparation and properties of amorphous carbon oxy-nitride filmsmade by the layer-by-layer method, 1210

Response time of photoconductivity of amorphous carbon nitridefilms prepared by a nitrogen radical sputter method, 1215


Carbon nanofiberPulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953

Carbon nanotube growthFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

Carbon nanotubesA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Carbon nitrideParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143Ž .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172Deposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178Hydrogen concentrations and mass density obtained by X-ray and

neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

Carbon phosphideDeposition and properties of amorphous carbon phosphide films,

1041

Ž .Carbon vapor deposition CVDAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513

Catalytic graphitizationA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Catalytic processesGrowth mechanism and properties of the large area well-aligned


The effect of catalysis on the formation of one-dimensional carbonstructured materials, 1019

Characterisation IR� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328

CharacterizationGrain boundaries in boron-doped CVD diamond films, 697Deposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896Atomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905

Chemical vapor depositionFabrication of heteroepitaxial diamond thin films on

Ž . Ž .Ir 001 �MgO 001 substrates using antenna-edge-type micro-wave plasma-assisted chemical vapor deposition, 478

The cavity ring-down spectroscopy of C in a microwave plasma,2608

Surface acoustic waves on nanocrystalline diamond, 677Thermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703

Quantitative comparison of adhesive toughness for various diamondfilms on co-cemented tungsten carbide, 716

Effect of substrate grain size and surface treatments on thecutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Field emission, structure, cathodoluminescence and formationstudies of carbon and Si�C�N nanotubes, 793

Characteristics of hydrogenated amorphous carbon films depositedby large-area microwave-sustained surface wave plasma, 976

Ž .Chemical vapor deposition CVDEnhanced low-temperature thermionic field emission from

surface-treated N-doped diamond films, 774Growth mechanism and properties of the large area well-aligned


Chemical vapour depositionLow temperature plasma chemical vapour deposition of carbon

nanotubes, 918

Ž .Chemical vapour deposition CVDGrain boundaries in boron-doped CVD diamond films, 697

ChemisorptionCubic boron nitride growth from NH and BBr precursors: a3 3

theoretical study, 1286

Chromium nitrideCVD diamond deposition on steel using arc-plated chromium

nitride interlayers, 536

CNxSoft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068x

CoatingSoft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068xEffects of hydrogen incorporation on structural relaxation and

vibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Coiled nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

Columnar structureSmooth and high-rate reactive ion etching of diamond, 824

CompositeDLC composite thin films by sputter deposition, 1119

Computer simulationAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513Diagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562Analysis of the growth process of diamond films by chemical vapor

deposition, 584Atomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935High-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Calculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961Cubic boron nitride growth from NH and BBr precursors: a3 3


ConductivityLow temperature properties of the p-type surface conductivity of

diamond, 351


CorrosionThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Coulomb oscillationFabrication of diamond single-hole transistors using AFM

anodization process, 387

Cubic boron nitrideSynthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272Cubic boron nitride growth from NH and BBr precursors: a3 3


Ž .Cubic boron nitride CBNStresses in pulsed laser deposited cubic boron nitride films, 1276

Current decreaseDC and RF characteristics of 0.7-�m-gate-length diamond

metal�insulator�semiconductor field effect transistor, 378

Cut-off frequencyDC and RF characteristics of 0.7-�m-gate-length diamond


CVDFormation of diamond p�n junction and its optical emission

characteristics, 307Effects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446The CAP-reactor, a novel microwave CVD system for diamond

deposition, 467New technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma

chemical vapor deposition, 523Very adherent CVD diamond film on modified molybdenum sur-

face, 532Analysis of the growth process of diamond films by chemical vapor

deposition, 584Preparation and properties of sub-micron thick and free-standing

diamond membranes, 721Field emission from carbon films deposited on stainless steel

substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788Etching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828Characteristics of nickel-containing carbon films deposited using

electron cyclotron resonance CVD, 1031In situ kinetic analysis of SiC filaments CVD, 1234

Synthesis of B�C�N thin films by electron beam excited plasmaCVD, 1290

CVD diamondImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418Influence of nucleation on hydrogen incorporation in CVD

diamond films, 527

CVD diamond growthIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectro-scopy and laser reflection interferometry, 296

d.c. plasma CVDDefect induced lowering of work function in graphite-like

materials, 813

DC bias measurementsApplication of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332

DC plasma CVDMicrostructure and stress in nano-crystalline diamond films

deposited by DC glow discharge CVD, 601

Deep-level transient spectroscopyThe origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

DefectTheoretical modeling of sulfur�hydrogen complexes in diamond,

323

DefectsDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316Relaxation in undoped polycrystalline CVD diamond films under

red illumination, 635Grain boundaries in boron-doped CVD diamond films, 697From straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081Highest optical gap tetrahedral amorphous carbon, 1086Investigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239

DensityEngineering properties of fully sp3- to sp2-bonded carbon

films and their modifications after post-growth ionirradiation, 1095

Depletion regionFabrication of diamond single-hole transistors using AFM


DepositionThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467

Deposition conditionsPulsed PECVD deposition of diamond-like carbon films, 1047

DetectorsImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418Photoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427

Device modelingOptimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254

Diamondn-Type doping of diamond by sulfur and phosphorus, 289The kinetics of the capture of nitrogen by nickel defects in

diamond, 312� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328Application of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332A new acceptor state in CVD-diamond, 347DC and RF characteristics of 0.7-�m-gate-length diamond



Preparation of AlN and LiNbO thin films on diamond substrates3by sputtering method, 408

Photoconductivity of highly oriented and randomly orienteddiamond films for the detection of fast UV laser pulses, 423

Recent progresses of the BOLD investigation towards UV detectorsfor the ESA Solar Orbiter, 427

Effects of light on the ‘primed’ state of CVD diamond nucleardetectors, 446

New technology for high rate synthesis of PC-diamond coatings inair with photon plasmatron, 472

Fabrication of heteroepitaxial diamond thin films onŽ . Ž .Ir 001 �MgO 001 substrates using antenna-edge-type micro-

wave plasma-assisted chemical vapor deposition, 478Diamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555Recombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623On the ion-sensitivity of H-terminated surface channel devices on

diamond, 651Classical approximations for ionised impurity scattering applied

to diamond monocrystals, 686Preparation and properties of sub-micron thick and free-standing

diamond membranes, 721Application of diamond coatings onto small dental tools, 731

Tribological properties of Al� Si� Cu � M g alloy-basedcomposite-dispersing diamond nanocluster, 749

Enhanced low-temperature thermionic field emission fromsurface-treated N-doped diamond films, 774

Field emission from carbon films deposited on stainless steelsubstrate, 784

High pressure diamond and diamond-like carbon deposition usinga microwave CAP reactor, 1036

Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x

Precursor design in c-BN growth, 1300

Diamond and steelDiamond tools for wire sawing metal components, 742

Diamond coated toolsQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the

cutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Diamond defectsSurface conductivity of nitrogen-doped diamond, 359Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612Characterisation of electron irradiated boron-doped diamond, 681

Diamond electrodesElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640

Diamond filmThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405Diagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562

Diamond filmsSynchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371

The origin of charge transients in Al�undoped diamond�p-Sidiodes, 400

Influence of material properties on the performance of diamondphotocathodes, 437

Electrical properties of graphite�homoepitaxial diamond contact,451

Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001substrates by positively biased pretreatment, 509

Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523

Very adherent CVD diamond film on modified molybdenum sur-face, 532

Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550

Polycrystalline diamond synthesis by means of high power pulsedplasma glow discharge CVD, 573

Analysis of the growth process of diamond films by chemical vapordeposition, 584

The cavity ring-down spectroscopy of C in a microwave plasma,2608

Abrasive stripping voltammetry of silver and tin at boron-dopeddiamond electrodes, 646

Electrochemical activity of boron-doped diamond electrodes grownon carbon fiber cloths, 657

Optical brazing technique for bonding diamond films to zincsulfide, 753

Ion beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4gas mixtures, 833

Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837

Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856

Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953

Diamond growth² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596Diamond microwave micro relay, 672

Diamond growth and characterisationInvestigation on boron-doped CVD samples, 338Bias assisted growth on diamond single crystals: the defect


Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3

493Microwave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519Dependence of the growth rate, quality, and morphology of

diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

Diamond growth and characterizationThe large area deposition of diamond by the multi-cathode direct

Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463

Ž .The formation of a 111 texture of the diamond film onPt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

Growth of high-quality homoepitaxial diamond films by HF-CVD,504

CVD diamond deposition on steel using arc-plated chromiumnitride interlayers, 536

Studies of pulse operation regime of microwave plasma CVDreactor, 579


Diamond latticeStructure of diamond single crystals of different origins studies

by Kossel’s method, 882

Diamond MEMSDiamond microwave micro relay, 672

Diamond on steelHigh temperature diffusion chromizing as a successful method for


Diamond properties and applicationsSchottky junction properties of the high conductivity layer of

diamond, 355RF performance of surface channel diamond FETs with sub-micron

gate length, 382Fabrication of diamond single-hole transistors using AFM

anodization process, 387UV photodetector from Schottky diode diamond film, 442Optimised contact-structures for metal�diamond�metal

UV-detectors, 458Relaxation in undoped polycrystalline CVD diamond films under

red illumination, 635Effect of substrate grain size and surface treatments on the


Diamond tools for wire sawing metal components, 742Electron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Wettability and surface energy of oxidized and hydrogenplasma-treated diamond films, 845

Stimulated desorption of D� from diamond: surfaceversus sub-surface processes via resonance dissociative electronattachment, 867

Engineering properties of fully sp3- to sp2-bonded carbonfilms and their modifications after post-growth ionirradiation, 1095

Diamond thin filmsDirect fusion bonding of silicon to polycrystalline diamond, 482

Diamond toolsDiamond tools in stone and civil engineering industry: cutting

principles, wear and applications, 736

Diamond wearDiamond tools in stone and civil engineering industry: cutting


Diamond-coated tools and filmsThermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703

Diamond-like carbonCan we reliably estimate the emission field and field enhancement

factor of carbon nanotube film field emitters?, 763Field emission and Raman spectroscopy studies of atomic hydrogen

etching on boron and nitrogen doped DLC films, 804Effect of nanostructure and back contact material on the field

emission properties of carbon films, 819Characteristics of hydrogenated amorphous carbon films deposited

by large-area microwave-sustained surface wave plasma, 976Structural characterization of hard a-C:H films as a function of

the methane pressure, 980Plasma chemistry during deposition of a-C:H, 989Is stress necessary to stabilise sp3 bonding in diamond-like

carbon?, 994Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010

High pressure diamond and diamond-like carbon deposition usinga microwave CAP reactor, 1036

Deposition and properties of amorphous carbon phosphide films,1041

Pulsed PECVD deposition of diamond-like carbon films, 1047Determination of bonding in diamond-like carbon by Raman

spectroscopy, 1053Elastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062Highest optical gap tetrahedral amorphous carbon, 1086Inert gas diffusion in DLC�Si films, 1091DLC composite thin films by sputter deposition, 1119Tribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130Friction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135Deposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178

Ž .Diamond-like carbon DLCTribological properties of Al� Si� Cu � M g alloy-based

composite-dispersing diamond nanocluster, 749

Dielectric constantCharacterization of boron carbon nitride films with a low


DiffusionRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618Inert gas diffusion in DLC�Si films, 1091

Diffusion barrierHigh temperature diffusion chromizing as a successful method for


DiodeFormation of diamond p�n junction and its optical emission

characteristics, 307The origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

Ž .Direct current DC plasmaThe large area deposition of diamond by the multi-cathode direct


DislocationsThe dislocations of low-angle grain boundaries in GaN epilayers: a

HRTEM quantitative study and finite element stress statecalculation, 910

DLTSIon implantation of sulphur, boron and nitrogen in diamond: a

charge-based deep level transient spectroscopic investigation,342

DopingIon implantation of sulphur, boron and nitrogen in diamond: a


Doping p-typeElectrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657

Dose dependencePhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

Electrical conductivityApplication of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332


Electrical propertiesInfluence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263

Electrochemical impedanceThe effects of Si incorporation on the electrochemical and



ElectrochemistryElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640Abrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646

Electrode arrangementElectrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657

Ž .Electron cyclotron resonance ECRGrowth mechanism and properties of the large area well-aligned


Ž .Electron cyclotron resonance chemical vapor deposition ECR-CVDMorphology and characterization of highly nitrogenated, aligned,


Electron cyclotron resonance chemical vapour depositionOn the bonding structure of hydrogenated carbon nitrides grown


Electron diffractionCharacterisation of cold electron emitting carbonaceous films

containing Ni metallic nanocrystals, 809

Electron field emissionElectron field emission properties of microcrystalline and


Electron irradiationPhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

Electron microscopyThe dislocations of low-angle grain boundaries in GaN epilayers: a



Electron spectroscopySynchrotron radiation study of surface versus sub-surface



Electron spin resonanceHighest optical gap tetrahedral amorphous carbon, 1086

Electron stimulated desorptionStimulated desorption of D� from diamond: surface

versus sub-surface processes via resonance dissociative electronattachment, 867

Electron-spin-resonanceParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143

Electronic statesSurface conductivity of nitrogen-doped diamond, 359

Electronic structureInvestigation on boron-doped CVD samples, 338

EllipsometryAnalysis of the role of fluorine content on the thermal stability

of a-C:H:F thin films, 1100Spectroscopic ellipsometry studies on BN films from IR to vacuum

UV energy region, 1281

Energy distributionRole of adsorbates in field emission from nanotubes, 769

Epitaxial filmsOptical investigation of Al Ga �xN epitaxial films grown onx 1


EPREPR studies of a nickel�boron centre in synthetic diamond, 627

EtchingPreparation and properties of sub-micron thick and free-standing

diamond membranes, 721Enhancement of the etch rate of CVD diamond by prior C and Ge

implantation, 837Ž .The oxidation of 100 textured diamond, 861

EvaporationOptical brazing technique for bonding diamond films to zinc

sulfide, 753

FETRF performance of surface channel diamond FETs with sub-micron

gate length, 382

FibresIn situ kinetic analysis of SiC filaments CVD, 1234

Fibres, Transmission electron microscopy, sp3-BondingTransmission electron microscopy studies of nanofibers formed on

Fe C -carbide, 9317 3

Field emissionCan we reliably estimate the emission field and field enhancement

factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Enhanced low-temperature thermionic field emission from

surface-treated N-doped diamond films, 774Electron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780Field emission from carbon films deposited on stainless steel

substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788Field emission, structure, cathodoluminescence and formation

studies of carbon and Si�C�N nanotubes, 793Field emission and Raman spectroscopy studies of atomic hydrogen

etching on boron and nitrogen doped DLC films, 804Defect induced lowering of work function in graphite-like

materials, 813Effect of nanostructure and back contact material on the field

emission properties of carbon films, 819Smooth and high-rate reactive ion etching of diamond, 824Characteristics of hydrogenated amorphous carbon films deposited

by large-area microwave-sustained surface wave plasma, 976


Characteristics of nickel-containing carbon films deposited usingelectron cyclotron resonance CVD, 1031

FilmsLow energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026

Filtered arc depositionSubstrate bias effect on amorphous nitrogenated carbon films


FluorineAnalysis of the role of fluorine content on the thermal stability

of a-C:H:F thin films, 1100

Ž .Fourier transform infrared FT-IR spectroscopic ellipsometryVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183

Free standingPreparation and properties of sub-micron thick and free-standing

diamond membranes, 721

FrictionTribological properties of Al� Si� Cu � M g alloy-based

composite-dispersing diamond nanocluster, 749Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphous carbonthin films, 1005

Friction coefficientFriction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135

FTIRInfluence of nucleation on hydrogen incorporation in CVD

diamond films, 527

FullereneMolecular dynamics calculation of H gas storage in C and2 60

B N clusters, 94536 36

FullerenesCharacterisation of cold electron emitting carbonaceous films


Fusion bondingDirect fusion bonding of silicon to polycrystalline diamond, 482

Gallium nitrideGaN-based heterostructures for sensor applications, 886

Ž .Gallium nitride GaNAtomic-scale models of interactions between inversion domain


GaNŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by


Grain sizeSurface acoustic waves on nanocrystalline diamond, 677

GraphitePulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953

Growth� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328Nanometer rough, sub-micrometer-thick and continuous diamond

chemical vapor deposition film promoted by a synergeticultrasonic effect, 545

Growth mechanism of amorphous hydrogenated carbon, 969IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110

Growth rateDependence of the growth rate, quality, and morphology of


H�C�N chemistryInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2

mixtures, 567

H gas storage2

Molecular dynamics calculation of H gas storage in C and2 60B N clusters, 94536 36

Hall effectLow temperature properties of the p-type surface conductivity of

diamond, 351

Hall mobilityClassical approximations for ionised impurity scattering applied

to diamond monocrystals, 686

HardmetalDiamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555

HardnessStructural characterization of hard a-C:H films as a function of

the methane pressure, 980The effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Optical strength in UV region of amorphous carbon, 1106Characterisation of silicon carbide and silicon nitride thin films

and Si N �SiC multilayers, 12483 4

Synthesis of B�C�N thin films by electron beam excited plasmaCVD, 1290

HardnesssSubstrate bias effect on amorphous nitrogenated carbon films


Heated filamentThe origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

Heteroepitaxial diamondŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 x

vapor deposition, 499

HeteroepitaxyFabrication of heteroepitaxial diamond thin films on



493Electron emission from hydrogenated and oxidized heteroepitaxial


HF-CVDGrowth of high-quality homoepitaxial diamond films by HF-CVD,

504

High pressure crystal growthPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573


High pressure high temperatureModelling transition metals in diamond, 631

High pressure plasmaDiagnostics of plasma ball formed in high pressure microwave


High resolution electron spectroscopySurface vibrations on clean, deuterated, and hydrogenated single

Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365

Highly nitrogenated amorphous carbon nitrideMorphology and characterization of highly nitrogenated, aligned,


Homoepitaxyn-Type doping of diamond by sulfur and phosphorus, 289Photoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Growth of high-quality homoepitaxial diamond films by HF-CVD,

504Analysis of the growth process of diamond films by chemical vapor

deposition, 584Classical approximations for ionised impurity scattering applied


Hot filament chemical vapour depositionApplication of diamond coatings onto small dental tools, 731

Hot-filament CVDInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567

Electron field emission properties of microcrystalline andnanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

HPHT annealingReport on the influence of HPHT annealing on the 3107

cm�1 hydrogen related absorption peak in natural type Iadiamonds, 714

HREMArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

HTP diamondEPR studies of a nickel�boron centre in synthetic diamond, 627

HydrogenSurface vibrations on clean, deuterated, and hydrogenated single


Influence of nucleation on hydrogen incorporation in CVDdiamond films, 527

Dependence of the growth rate, quality, and morphology ofdiamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

Detection of CH bonds from micro Raman spectroscopy onxpolycrystalline boron doped diamond electrodes, 662

Report on the influence of HPHT annealing on the 3107cm�1 hydrogen related absorption peak in natural type Iadiamonds, 714


Ž .Hydrogen deuteriumSynchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuterium

activated by hot filament-high vacuum and ex situ microwaveplasma, 371

Hydrogen diffusionDiffusion of hydrogen from a microwave plasma into diamond and


Hydrogen etchingField emission and Raman spectroscopy studies of atomic hydrogen

etching on boron and nitrogen doped DLC films, 804

Hydrogen terminated diamondLow temperature properties of the p-type surface conductivity of

diamond, 351

Hydrogen-related shallow acceptorSchottky junction properties of the high conductivity layer of

diamond, 355

Hydrogenated amorphous carbonPlasma chemistry during deposition of a-C:H, 989

Hydrogenated carbon nitrideOn the bonding structure of hydrogenated carbon nitrides grown


HydrogenationBlack diamond: a new material for active electronic devices, 396Wettability and surface energy of oxidized and hydrogen

plasma-treated diamond films, 845

Impuritiesn-Type doping of diamond by sulfur and phosphorus, 289Theoretical modeling of sulfur�hydrogen complexes in diamond,

323Surface conductivity of nitrogen-doped diamond, 359

In situIn situ kinetic analysis of SiC filaments CVD, 1234

In situ characterisationIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

In situ diagnosticsIn situ plasma diagnostics of the chemistry behind sulfur doping

of CVD diamond films, 301

InfraredInvestigation on boron-doped CVD samples, 338Optical brazing technique for bonding diamond films to zinc

sulfide, 753

Ž .Infrared IR spectroscopyAnalysis of the role of fluorine content on the thermal stability


Ž .Infrared IR transmissionThe large area deposition of diamond by the multi-cathode direct


InsulatorHigh resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219

Integrated circuitThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405

InterfaceElectrical properties of graphite�homoepitaxial diamond contact,

451


Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

GaN-based heterostructures for sensor applications, 886Stoichiometry and interface effects on the electronic and optical

properties of SiC nanoparticles, 1243

InterlayerCVD diamond deposition on steel using arc-plated chromium


Internal stressŽ .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172

Ion assisted depositionŽ .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205

Ion beam assisted depositionXPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x

1149

Ion beam etchingIon beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4

gas mixtures, 833

Ion bombardmentAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513

Ion channellingBias assisted growth on diamond single crystals: the defect


Ion implantationIon implantation of sulphur, boron and nitrogen in diamond: a


Implantation-doping of diamond with B�, C�, N� and O� ionsusing low temperature annealing, 612


Investigation of ion implantation-induced damage in the carbonand silicon sublattices of 6H-SiC, 1239

Ion irradiationEngineering properties of fully sp3- to sp2-bonded carbon


Ion-assisted depositionDeposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896

Ion-beam depositionCarbon films obtained from a C fullerene ion beam, 96460

Ion-implantationNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392

IRDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110

IridiumFabrication of heteroepitaxial diamond thin films on



493

Kossel’s linesStructure of diamond single crystals of different origins studies


LaserNew technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472Pulsed laser deposition of CN films: role of r.f. nitrogenx

plasma activation for the film structure formation, 1223

Laser evaporationA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Laser processingOptical strength in UV region of amorphous carbon, 1106

Laser reflection interferometryIn situ characterisation of CVD diamond growth under H S2


Low temperature magneto-transportLow temperature properties of the p-type surface conductivity of

diamond, 351

Low-kHigh resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219

LuminescenceFormation of diamond p�n junction and its optical emission

characteristics, 307Growth of high-quality homoepitaxial diamond films by HF-CVD,

504

Magnetron sputteringVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectro-scopic ellipsometry, 1183


Mass spectrometryIn situ characterisation of CVD diamond growth under H S2


In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301

Mass-separated ion beam depositionTribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130

Mechanical propertiesSurface acoustic waves on nanocrystalline diamond, 677Structural characterization of hard a-C:H films as a function of

the methane pressure, 980Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000Mechanical properties and performance of magnetron-sputtered

graded diamond-like carbon films with and without metaladditions, 1139


Mechanical stressStresses in pulsed laser deposited cubic boron nitride films, 1276

MESFETNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254

MetalTribological properties of Al� Si� Cu � M g alloy-based

composite-dispersing diamond nanocluster, 749

Micro Raman SpectroscopyPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573Detection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662

Micro relayDiamond microwave micro relay, 672

Micro switchDiamond microwave micro relay, 672

Micro-beamImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418

MicrodischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc


MicrostructureNanometer rough, sub-micrometer-thick and continuous diamond


Thermal diffusivity in diamond, SiC N and BC N , 708x y x ySoft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068xŽ .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205

MicrowaveHigh pressure diamond and diamond-like carbon deposition using

a microwave CAP reactor, 1036

Microwave plasmaThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467Diagnostics of plasma ball formed in high pressure microwave


Microwave plasma chemical vapor depositionSynthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2

Microwave plasma enhanced chemical vapor depositionThe effect of catalysis on the formation of one-dimensional carbon

structured materials, 1019

MigrationThe kinetics of the capture of nitrogen by nickel defects in

diamond, 312

MISFETDC and RF characteristics of 0.7-�m-gate-length diamond


MobilityClassical approximations for ionised impurity scattering applied


ModelingAtomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905Calculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010From �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268Spectroscopic ellipsometry studies on BN films from IR to vacuum


ModellingInvestigations of the gas phase chemistry in a hot filament CVD


Modelling strainModelling transition metals in diamond, 631

Molecular dynamicsMolecular dynamics calculation of H gas storage in C and2 60

B N clusters, 94536 36

Morphology² :Large area deposition of 100 -textured diamond films by a


MPECVDŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

N doped CVD diamondPhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

n-Type doping� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328

n-Type dopingn-Type doping of diamond by sulfur and phosphorus, 289Formation of diamond p�n junction and its optical emission

characteristics, 307Theoretical modeling of sulfur�hydrogen complexes in diamond,

323Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612

Nano-indentationEngineering properties of fully sp3- to sp2-bonded carbon


NanocapsulesArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

Nanocrystalline carbonElectron field emission properties of microcrystalline and


Nanocrystalline diamondSynthesis and tribological characteristics of nanocrystalline


Nanocrystalline SiCStoichiometry and interface effects on the electronic and optical



NanodiamondDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872

NanotubeLarge scale synthesis of carbon nanotubes by plasma rotating arc


NanotubesCan we reliably estimate the emission field and field enhancement

factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Spectroscopic analysis of single-wall carbon nanotubes and carbon

nanotube peapods, 957

Neutron reflectivityHydrogen concentrations and mass density obtained by X-ray and


Ni nano-crystalsCharacterisation of cold electron emitting carbonaceous films


Ni�Cu alloysThe effect of catalysis on the formation of one-dimensional carbon


NickelThe kinetics of the capture of nitrogen by nickel defects in

diamond, 312Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623Characteristics of nickel-containing carbon films deposited using

electron cyclotron resonance CVD, 1031

Nickel-boron complexEPR studies of a nickel�boron centre in synthetic diamond, 627

NitrideArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

NitridesReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427Thermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703Optical investigation of Al Ga �xN epitaxial films grown onx 1

AlN buffer layers, 892Deposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896The dislocations of low-angle grain boundaries in GaN epilayers: a


Molecular dynamics calculation of H gas storage in C and2 60B N clusters, 94536 36

XPS characterization of the composition and bonding states ofelements in CN layers prepared by ion beam assisted deposition,x

1149Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153The effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Effects of hydrogen incorporation on structural relaxation and


Variation of nitrogen incorporation and bonding configuration ofcarbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectro-scopic ellipsometry, 1183


Preparation and properties of amorphous carbon oxy-nitride filmsmade by the layer-by-layer method, 1210

Response time of photoconductivity of amorphous carbon nitridefilms prepared by a nitrogen radical sputter method, 1215


From �-MOSFET with silicon on oxide to �-MOSFET withsilicon carbide on nitride, 1268

Stresses in pulsed laser deposited cubic boron nitride films, 1276X-Ray absorption study of the bonding structure of BCN


NitrogenParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143Ž .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205Substrate bias effect on amorphous nitrogenated carbon films


Nitrogen aggregationThe kinetics of the capture of nitrogen by nickel defects in

diamond, 312

NucleationAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513Microwave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519Influence of nucleation on hydrogen incorporation in CVD

diamond films, 527Nanometer rough, sub-micrometer-thick and continuous diamond


Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550

Ohmic contactApplication of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332Electrical properties of graphite�homoepitaxial diamond contact,

451

One-dimensional carbon structured materialsThe effect of catalysis on the formation of one-dimensional carbon


Optical bandgapDeposition and properties of amorphous carbon phosphide films,

1041

Optical emission spectrometryIn situ plasma diagnostics of the chemistry behind sulfur doping

of CVD diamond films, 301

Optical emission spectroscopyIn situ characterisation of CVD diamond growth under H S2


Ž .Properties of carbon nitride CN films deposited by axhigh-density plasma ion plating method, 1172

Optical propertiesHighest optical gap tetrahedral amorphous carbon, 1086


Optical studyOptical investigation of Al Ga �xN epitaxial films grown onx 1


Optoelectronic propertiesEffects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446

OxidationElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640Preparation and properties of amorphous carbon oxy-nitride films

made by the layer-by-layer method, 1210

p-type conductivityBlack diamond: a new material for active electronic devices, 396

p-Type dopingInfluence of the environment on the surface conductivity of

chemical vapor deposition diamond, 856

Paramagnetic defectsAnnealing study of the formation of nickel-related paramagnetic

defects in diamond, 623

ParamagnetismParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143

PassivationDiffusion of hydrogen from a microwave plasma into diamond and


PeapodsSpectroscopic analysis of single-wall carbon nanotubes and carbon

nanotube peapods, 957

pHOn the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Phase stabilisationPrecursor design in c-BN growth, 1300

PhononSurface vibrations on clean, deuterated, and hydrogenated single


Phosphorus dopingEtching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828Deposition and properties of amorphous carbon phosphide films,

1041

PhotoconductivityImaging deep UV light with diamond-based systems, 433Response time of photoconductivity of amorphous carbon nitride

films prepared by a nitrogen radical sputter method, 1215

PhotodetectorUV photodetector from Schottky diode diamond film, 442

PhotodetectorsImaging deep UV light with diamond-based systems, 433

PhotoelectricalInfluence of material properties on the performance of diamond

photocathodes, 437

Photoelectron spectroscopyThermal diffusivity in diamond, SiC N and BC N , 708x y x y

Ž .The oxidation of 100 textured diamond, 861

PhotoluminescenceCharacterisation of electron irradiated boron-doped diamond, 681Photoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692Multi-band structure of amorphous carbon luminescence, 1115

Photon stimulated ion desorptionSynchrotron radiation study of surface versus sub-surface


Photonelectron spectroscopyAnalysis of the role of fluorine content on the thermal stability


PhotoresponseRelaxation in undoped polycrystalline CVD diamond films under

red illumination, 635

Physical vapor depositionPulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953Mechanical properties and performance of magnetron-sputtered


Physical vapour depositionThermal diffusivity in diamond, SiC N and BC N , 708x y x y

PiezoresistanceReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

PinholesThe effects of Si incorporation on the electrochemical and



Planar contact geometryOptimised contact-structures for metal�diamond�metal UV-

detectors, 458

Planar defectsAtomic-scale models of interactions between inversion domain


PlasmaNew technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472Chemical vapor deposition diamond thin films growth on Ti6AL4V

using the Surfatron system, 550The cavity ring-down spectroscopy of C in a microwave plasma,2

608Large scale synthesis of carbon nanotubes by plasma rotating arc

discharge technique, 914Low temperature plasma chemical vapour deposition of carbon

nanotubes, 918Growth mechanism of amorphous hydrogenated carbon, 969High pressure diamond and diamond-like carbon deposition using

a microwave CAP reactor, 1036Synthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290

Plasma-assisted chemical vapor depositionCharacterization of boron carbon nitride films with a low


PolycrystallineSurface acoustic waves on nanocrystalline diamond, 677


Polycrystalline diamond filmUV photodetector from Schottky diode diamond film, 442

Polycrystalline diamond filmsDetection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662

Post-growthLow energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026

Potentiodynamic curvesEvaluation of corrosion performance of ultra-thin Si-DLC


Powder technologyA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Pre-treated substrateApplication of diamond coatings onto small dental tools, 731

Preferential orientationPreparation of AlN and LiNbO thin films on diamond substrates3

by sputtering method, 408

PressureDependence of the growth rate, quality, and morphology of


Pressure sensorReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

Pretreated substratesNanometer rough, sub-micrometer-thick and continuous diamond


ProcessingSilicon carbide Schottky and ohmic contact process dependence,

1258

Pt�TiO �SiO �Si2 xŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

Pulsed glow discharge CVDPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573

Pulsed laser ablationEffect of nanostructure and back contact material on the field

emission properties of carbon films, 819

Pulsed laser depositionCorrelation between surface oxygen content and microstructure of

carbon nitride films, 1153The effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Stresses in pulsed laser deposited cubic boron nitride films, 1276

Pulsed MPACVD reactorStudies of pulse operation regime of microwave plasma CVD

reactor, 579

Pulsed PECVDPulsed PECVD deposition of diamond-like carbon films, 1047

Pulsed RF biasPulsed PECVD deposition of diamond-like carbon films, 1047

Radiation damageRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618

Radiation hardnessThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405

Radiation induced defectsEffects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612

Ž .Radio frequency r.f.Pulsed laser deposition of CN films: role of r.f. nitrogenx


RamanŽ .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172Stoichiometry and interface effects on the electronic and optical


Raman and IR spectroscopyEffects of hydrogen incorporation on structural relaxation and


Raman scatteringEffect of nanostructure and back contact material on the field

emission properties of carbon films, 819

Raman spectraCarbon films obtained from a C fullerene ion beam, 96460

Raman spectroscopyInfluence of material properties on the performance of diamond

photocathodes, 437Bias assisted growth on diamond single crystals: the defect


Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523

Microstructure and stress in nano-crystalline diamond filmsdeposited by DC glow discharge CVD, 601

Study of carbon nanoemitters using CO �CH gas mixtures in2 4triode-type field emission arrays, 788

Field emission and Raman spectroscopy studies of atomic hydrogenetching on boron and nitrogen doped DLC films, 804


Spectroscopic analysis of single-wall carbon nanotubes and carbonnanotube peapods, 957

Effects of gas pressure and r.f. power on the growth andproperties of magnetron sputter deposited amorphous carbonthin films, 1005

Determination of bonding in diamond-like carbon by Ramanspectroscopy, 1053

Elastic constants and structural properties of nanometre-thickdiamond-like carbon films, 1062

The effects of Si incorporation on the electrochemical andnanomechanical properties of DLC thin films, 1074

Hydrogen concentrations and mass density obtained by X-ray andneutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

Reactive ion etchingSmooth and high-rate reactive ion etching of diamond, 824


Reactive ion etching of CVD-diamond for piezoresistive pressuresensors, 841

Reactive ion etching etchingEtching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828

Reactor designThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467

RelaxationRelaxation in undoped polycrystalline CVD diamond films under

red illumination, 635

REMPI measurementsInvestigations of the gas phase chemistry in a hot filament CVD


RF performanceRF performance of surface channel diamond FETs with sub-micron

gate length, 382

Rf radical beamDeposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178

RIEReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

Scanning electron microscopyInfluence of material properties on the performance of diamond

photocathodes, 437Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153

Ž .Scanning tunnelling microscopy STMCalculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961

Schottky diodeUV photodetector from Schottky diode diamond film, 442Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

Silicon carbide Schottky and ohmic contact process dependence,1258

Influence of annealing on reverse current of 4H�SiC Schottkydiodes, 1263

Schottky junctionsSchottky junction properties of the high conductivity layer of

diamond, 355

SEMStudy of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788

Sensitivity mapImaging of the sensitivity in detector grade polycrystalline


SensorsMicrowave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519On the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Si doped DLCEvaluation of corrosion performance of ultra-thin Si-DLC


Ž .Si-doped diamond-like carbon DLCThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074

SiCNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254Influence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263

SiliconAtomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935

Silicon carbideInert gas diffusion in DLC�Si films, 1091In situ kinetic analysis of SiC filaments CVD, 1234Investigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239Characterisation of silicon carbide and silicon nitride thin films


Ž .Silicon carbide SiCSilicon carbide Schottky and ohmic contact process dependence,

1258

Silicon nitrideCharacterisation of silicon carbide and silicon nitride thin films


Silicon-on-diamondThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405Direct fusion bonding of silicon to polycrystalline diamond, 482

Single-hole transistorFabrication of diamond single-hole transistors using AFM


SOIFrom �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268

Solid lubricantFriction coefficient measurements By LFM on DLC films as


sp2 BondingCalculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961

sp2�sp3 bondingDefect induced lowering of work function in graphite-like

materials, 813

sp3 BondTribological properties of diamond-like carbon films prepared by


sp3 bondingIs stress necessary to stabilise sp3 bonding in diamond-like



sp3-BondingCubic boron nitride growth from NH and BBr precursors: a3 3


SpectroscopyThe cavity ring-down spectroscopy of C in a microwave plasma,2

608


Low temperature plasma chemical vapour deposition of carbonnanotubes, 918

Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953

Plasma chemistry during deposition of a-C:H, 989IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Pulsed laser deposition of CN films: role of r.f. nitrogenx


Sputter depositionDLC composite thin films by sputter deposition, 1119

SputteringReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphous carbonthin films, 1005

Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010

Effects of hydrogen incorporation on structural relaxation andvibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Synthesis and characterization of cubic boron nitride films �


SQUIDArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

SteelCVD diamond deposition on steel using arc-plated chromium


Stone cuttingDiamond tools in stone and civil engineering industry: cutting


Stone processingDiamond tools in stone and civil engineering industry: cutting


StrainŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by


StressThe dislocations of low-angle grain boundaries in GaN epilayers: a


Structural characterization of hard a-C:H films as a function ofthe methane pressure, 980

Is stress necessary to stabilise sp3 bonding in diamond-likecarbon?, 994

Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010

Characterisation of silicon carbide and silicon nitride thin filmsand Si N �SiC multilayers, 12483 4

Synthesis and characterization of cubic boron nitride films �


Stress relaxationMicrostructure and stress in nano-crystalline diamond films


StructureHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36

Determination of bonding in diamond-like carbon by Ramanspectroscopy, 1053

Inert gas diffusion in DLC�Si films, 1091

Structure perfectionStructure of diamond single crystals of different origins studies


Sub-micronPreparation and properties of sub-micron thick and free-standing

diamond membranes, 721

Sulfochromic treatmentOptimised contact-structures for metal�diamond�metal

UV-detectors, 458

Sulfur dopingIn situ characterisation of CVD diamond growth under H S2


In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301

Sulfur effectsElectron field emission properties of microcrystalline and


Sulfur-dopingA new acceptor state in CVD-diamond, 347

SulphurIon implantation of sulphur, boron and nitrogen in diamond: a


SurfaceTheoretical modeling of sulfur�hydrogen complexes in diamond,

323Surface conductivity of nitrogen-doped diamond, 359Surface vibrations on clean, deuterated, and hydrogenated single


Very adherent CVD diamond film on modified molybdenum sur-face, 532

Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851


Ž .The oxidation of 100 textured diamond, 861Stimulated desorption of D� from diamond: surface

versus sub-surface processes via resonance dissociative electronattachment, 867

Surface acoustic waveReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413

Surface acoustic wave devicePreparation of AlN and LiNbO thin films on diamond substrates3


Surface conductivityLow temperature properties of the p-type surface conductivity of

diamond, 351Schottky junction properties of the high conductivity layer of

diamond, 355

Surface energyWettability and surface energy of oxidized and hydrogen



Surface potential barrierElectron emission from hydrogenated and oxidized heteroepitaxial


Surface roughnessPreparation of AlN and LiNbO thin films on diamond substrates3


Surface terminationOn the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Surface treatmentsDiamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555

Surface-channelRF performance of surface channel diamond FETs with sub-micron

gate length, 382

SynchrotronImaging of the sensitivity in detector grade polycrystalline


Synthetic diamondModelling transition metals in diamond, 631

TEMField emission, structure, cathodoluminescence and formation

studies of carbon and Si�C�N nanotubes, 793

Ternary BCNX-Ray absorption study of the bonding structure of BCN


Tetrahedral amorphous carbonIs stress necessary to stabilise sp3 bonding in diamond-like



Textured film² :Large area deposition of 100 -textured diamond films by a


TheoryPrecursor design in c-BN growth, 1300

Thermal conductivityThe large area deposition of diamond by the multi-cathode direct


Thermal conductivity enhancement in cutting tools by chemicalvapor deposition diamond coating, 703

Thermal diffusivity in diamond, SiC N and BC N , 708x y x y

Thermal-oxidationŽ .The oxidation of 100 textured diamond, 861

Thin filmCarbon films obtained from a C fullerene ion beam, 96460DLC composite thin films by sputter deposition, 1119

Thin filmsCharacterisation of cold electron emitting carbonaceous films


Titanium carbideChemical vapor deposition diamond thin films growth on Ti6AL4V

using the Surfatron system, 550

Ž .Titanium carbide TiCMechanical properties and performance of magnetron-sputtered


Tool designDiamond tools for wire sawing metal components, 742

Transmission electron diffractionCharacterization of boron carbon nitride films with a low


Transmission electron microscopyGrain boundaries in boron-doped CVD diamond films, 697Synthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2Ž .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901Atomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935Characterization of boron carbon nitride films with a low


Ž .Transmission electron microscopy TEMHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Morphology and characterization of highly nitrogenated, aligned,


TribiologyFriction coefficient measurements By LFM on DLC films as


Tribological propertyTribological properties of diamond-like carbon films prepared by


Tungsten carbideQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the


Application of diamond coatings onto small dental tools, 731

UV imagingImaging deep UV light with diamond-based systems, 433

UV Raman spectroscopySynthesis and tribological characteristics of nanocrystalline


UV rangePhotoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427Multi-band structure of amorphous carbon luminescence, 1115

UV range illuminationOptical strength in UV region of amorphous carbon, 1106

UV-photodetectorsOptimised contact-structures for metal�diamond�metal UV-

detectors, 458

VacanciesStoichiometry and interface effects on the electronic and optical


Vacancy complexesCharacterisation of electron irradiated boron-doped diamond, 681

Vacancy-interstitial recombinationRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618


VUV ellipsometrySpectroscopic ellipsometry studies on BN films from IR to vacuum


Water treatmentElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640

WearDiamond cantilever with integrated tip for nanomachining, 667

WettabilityWettability and surface energy of oxidized and hydrogen


Wire sawingDiamond tools for wire sawing metal components, 742

X-Ray absorption near edge spectroscopyX-Ray absorption study of the bonding structure of BCNcompounds enriched in carbon by CH ion assistance, 12954

X-Ray absorption spectroscopyOn the bonding structure of hydrogenated carbon nitrides grown


X-Ray diffractionDeposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000

Ž .X-Ray diffraction XRDMicrostructure and stress in nano-crystalline diamond films


X-ray photoelectron spectroscopyCharacterization of boron carbon nitride films with a low

dielectric constant, 985XPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x

1149Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153

Ž .X-Ray photoelectron spectroscopy XPSVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectro-scopic ellipsometry, 1183

X-Ray reflectivityElastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062Hydrogen concentrations and mass density obtained by X-ray and


XPSThe effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Effect of plasma parameters on the structure of CN layersx

deposited by DC magnetron sputtering, 1200

Y-branched nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

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Subject Index of Volume 11

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