08. – 10.05.2012, Nürnberg Short Descriptions Proceedings Keynote Electrical Power Subsystem on Satellites Speaker: Albert Crausaz, European Space Agency, F Competition in Wide Bandgap Devices Comparison of Reverse Recovery Behavior in Full-SiC Switches Tim Hilden, Peter Jänker, EADS Deutschland; Lothar Frey, University of Erlangen, D Body diodes of SiC power devices show significant better switching performance than their Si counterparts. Switching test results of SiC switch/diode combinations will be presented, showing the performance of SiC body diodes compared to additional antiparallel SiC Schottky diodes. Direct comparison among different technologies in Silicon Carbide Bettina Rubino, Michele Macauda, Massimo Nania, Simone Buonomo, STMicroelectronics, I Nominated for the Young Engineer Award This work proposes a cross comparison among the first ST SiC prototype MOSFET, a SiC JFET normally off and a SiC BJT. The analysis will compare their static and dynamic parameters with a special focus on each device driving requirement. It will be showed that, despite the higher Ron*A values, the SiC MOSFET exhibits superior dynamic performances and a very simple drive approach versus the other two competing devices. Comparison of six different SiC Power Switching Devices in the 1200 V range W.-Toke Franke, Bjørn Jongschaap, Danfoss Solar Inverters, DK This paper shows electrical characteristics of all today available SiC power switches in the 1200V power range. The results are achieved by measuring the switching and conducting behavior at exactly the boundary conditions for all devices for a valuable comparison. The investigated devices are 2 different normally on JFETs, 2 different MOSFETs, one normally-off JFET and a bipolar transistor. It could be concluded that it depends a lot on the application which of these devices is the preferable. The renaissance of the BJT as a highly efficient power device based on SiC material Samuel Araujo, Peter Zacharias, University of Kassel, D; Anders Lindgren, Fairchild Semiconductor, S Nominated for the Young Engineer Award The BJT represents one of the most attractive SiC switch structures given the low specific resistance, fast switching and low temperature dependence. Reliable operation is achieved due to short circuit capability and the absence of second-breakdown. A detailed investigation of these device properties with a direct link to practical application aspects will be performed here, along with the proposition of a driver solution for further reducing the losses, followed by tests with a boost converter. Control of Converters and Drivers High-frequency GaN Diode-Free Motor Drive Inverter with Pure Sine-wave Output Yifeng Wu, D. Kebort, J. Guerrero, S. Yea, J. Honea, Transphorm; Kohei Shirabe, Jun Kang, Yaskawa America, USA We present the first kW-class, 3-phase GaN-based inverter hard-switched at 100-kHz PWM. It is built around a 6-in-1 power module with 600-V GaN power HEMTs. Each GaN transistor operates in three states including forward blocking, forward conducting and reverse conducting, eliminating the need for free-wheeling diodes. The high PWM frequency enables on-board compact filters, resulting in high-quality pure sine-wave output. 98.5% inverter efficiency & 2% motor efficiency improvement were obtained.
Transcript
08. – 10.05.2012, Nürnberg
Short Descriptions Proceedings Keynote Electrical Power Subsystem on Satellites Speaker: Albert Crausaz, European Space Agency, F
Competition in Wide Bandgap Devices Comparison of Reverse Recovery Behavior in Full-SiC Switches Tim Hilden, Peter Jänker, EADS Deutschland; Lothar Frey, University of Erlangen, D Body diodes of SiC power devices show significant better switching performance than their Si counterparts. Switching test results of SiC switch/diode combinations will be presented, showing the performance of SiC body diodes compared to additional antiparallel SiC Schottky diodes. Direct comparison among different technologies in Silicon Carbide Bettina Rubino, Michele Macauda, Massimo Nania, Simone Buonomo, STMicroelectronics, I Nominated for the Young Engineer Award This work proposes a cross comparison among the first ST SiC prototype MOSFET, a SiC JFET normally off and a SiC BJT. The analysis will compare their static and dynamic parameters with a special focus on each device driving requirement. It will be showed that, despite the higher Ron*A values, the SiC MOSFET exhibits superior dynamic performances and a very simple drive approach versus the other two competing devices. Comparison of six different SiC Power Switching Devices in the 1200 V range W.-Toke Franke, Bjørn Jongschaap, Danfoss Solar Inverters, DK This paper shows electrical characteristics of all today available SiC power switches in the 1200V power range. The results are achieved by measuring the switching and conducting behavior at exactly the boundary conditions for all devices for a valuable comparison. The investigated devices are 2 different normally on JFETs, 2 different MOSFETs, one normally-off JFET and a bipolar transistor. It could be concluded that it depends a lot on the application which of these devices is the preferable. The renaissance of the BJT as a highly efficient power device based on SiC material Samuel Araujo, Peter Zacharias, University of Kassel, D; Anders Lindgren, Fairchild Semiconductor, S Nominated for the Young Engineer Award The BJT represents one of the most attractive SiC switch structures given the low specific resistance, fast switching and low temperature dependence. Reliable operation is achieved due to short circuit capability and the absence of second-breakdown. A detailed investigation of these device properties with a direct link to practical application aspects will be performed here, along with the proposition of a driver solution for further reducing the losses, followed by tests with a boost converter.
Control of Converters and Drivers High-frequency GaN Diode-Free Motor Drive Inverter with Pure Sine-wave Output Yifeng Wu, D. Kebort, J. Guerrero, S. Yea, J. Honea, Transphorm; Kohei Shirabe, Jun Kang, Yaskawa America, USA We present the first kW-class, 3-phase GaN-based inverter hard-switched at 100-kHz PWM. It is built around a 6-in-1 power module with 600-V GaN power HEMTs. Each GaN transistor operates in three states including forward blocking, forward conducting and reverse conducting, eliminating the need for free-wheeling diodes. The high PWM frequency enables on-board compact filters, resulting in high-quality pure sine-wave output. 98.5% inverter efficiency & 2% motor efficiency improvement were obtained.
08. – 10.05.2012, Nürnberg
Multiphase Buck Controller Based On Voltage Controlled Constant On Time Architecture Osvaldo Enrico Zambetti, Alessandro Zafarana, STMicroelectronics, I Intel and AMD Microprocessors require very sophisticated power management system.Multiphase buck topology becomes a standard in power management industry because this architecture allows to minimize the output filter and supporting high current designs.The most used topologies for multiphase buck controllers are voltage mode and constant on time.In this paper it will be presented a new solution called that will try to take the advantages from both voltage mode and constant on time architectures. A SVPWM for Three-Phase Current Reconstruction on Single DC-Link Shunt Ling Qin, Bilal Akin, Texas Instruments, USA As cost becomes an important concern, single DC-Link shunt is expected to use in low-end motor drives. Unfortunately, ADC on single-shunt is a challenge due to narrow pulse width at low motor speed and boundary region even at mid-high motor speed. ADC must be fast enough to sample shunt current, while parasitic current response in switching is hard to avoid at narrow pulse. A proposed SVPWM is designed to utilize time of zero sectors for current sampling. New control method of adaptive dead time for high efficient forward DC/DC converter Bernhard Strzalkowski, Analog Devices, D Synchronous rectification (SR) is state-of-the-art solution in low-voltage DC power supplies because of its lower conduction loss. To reduce power losses in the main switches of isolated converter, the phase-shift-control mode using zero voltage switching (ZVS) becomes more popular. The optimum control of SR- and main switches is a challenge for application with wide input voltage and wide load ranges. The paper presents new adaptive dead time control method derived only form input current value Discrete Modeling of Resonant Converters – Practical Validation Jürgen Stahl, Thomas Dürbaum, University of Erlangen, D This paper applies discrete modeling onto resonant converters. It shows how to calculate the steady state and the very important small signal control to output transfer function. Furthermore, the practical relevance of this model is investigated by comparing the calculated results with measurements, and an excellent agreement shows the accuracy. A great emphasis is placed on the practical set-up, the controller design, and measurement of the control to output transfer function.
Advanced Silicon Power Devices 600V 6th-Gen CSTBTTM: An improvement of the switching characteristic in large current density Tatsuo Harada, Kazunari Hatade, Noritsugu Nomura, Tesuo Takahashi, Mitsubishi Electric, J 600 V-CSTBTTM of the 6th generation is announced in this paper. It is designing especially for DIPIPMTM and has borne in mind below 20A class for current rating. By using the design of the 6th generation CSTBT, the switching loss has been improved rather than the conventional design.
TRENCHSTOP 50µ: a new application specific IGBT series Thomas Kimmer, Infineon Technologies Austria, A; Erich Griebl, Infineon Technologies, D We introduce a new fast switching 650 V IGBT generation and present application test results for high frequency resonant and hard switching applications. The device is an optimization of Infineon’s TRENCHSTOP technology towards lowest Eoff losses AND low VCEsat. The new TRENCHSTOP 50µ series offers a breakthrough in the usage of IGBTs in applications that require high frequency switching, highest power density and efficiency.
08. – 10.05.2012, Nürnberg
DTMOS-IV - RDS(ON) innovation by deep-trench filling superjunction technology Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera, Georges Tchouangue,Toshiba Corporation, J We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the DTMOS-III. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in PFC application by adjustment of RDS(ON)*QGD designed. Super junction MOSFET: Analysis and market outlook of next generation silicon power devices Alexandre Avron, Yole Développement, F Super Junction is a technology that has been released in 1998. The reason for a paper on the subject is the changes that this market is currently experiencing: Technically speaking, SJ MOS are complex devices and several processes are used. On the other side, SJ is becoming more and more accessible. The last 18 months have been the theatre of more products announcements that the 1999-2009 period. Last but not least, GaN devices are close to mass production and have better performance than SJ MOS
Special Session "FPGAs in Intelligent Motion I” FPGA Current Controller for Virtual Synchronous Machine Christopher Pelczar, Markus Stubbe, Hans-Peter Beck, Oliver Zirn, Clausthal University of Technology, D Nominated for the Young Engineer Award We designed an FPGA-based current controller for the Virtual Synchronous Machine (VISMA), a grid-tie inverter which has synchronous machine properties. A VISMA system with the FPGA controller was implemented. The complete signal chain is digital, reducing calibration efforts and increasing the level of system integration. The current tracking performance of the inverter were measured and compared for PWM-based and hysteresis current control algorithms implemented in FPGA. Use of FPGA Model Based Design Flow for Motor Control on Servo Drives Kevin Smith, Altera Europe, UK Demonstration of a Matlab/Simulink model based design flow which allows direct to hardware compilation on Altera FPGAs without requiring knowledge of VHDL. A Field Oriented Control (FOC) algorithm for current control of a servo motor is implemented using Altera's DSP Builder Advanced Blockset and demonstrated in hardware. DSP Builder integrates MATLAB and Simulink with the Altera Quartus II software and simulation tools, and automatically generates optimized VHDL for the chosen FPGA device. A Switching Control Strategy for the Reduction of Torque Ripple for PMSM Karel Jezernik, Robert Horvat, University of Maribor, SLO This paper proposes an FPGA implementation of a variable structure system (VSS) predictive sequential switching control strategy applied to a permanent magnet synchronous machine (PMSM). It allows obtaining faster torque dynamics than vector control algorithms. A predictive sliding mode controller is developed, designed as finite state automata (FSM) and implemented. The new FPGA torque and speed controller is discussed, analyzed and experimentally verified. FPGA High Efficiency low Noise Pulse Frequency Space Vector Modulation Giulio Corradi, D. Quagreda, R. Raffaettà, Xilinx, D In this paper is described the PWM-PFM versatile modulator, its advantageous practical results applied to BLDC PMSM, and Stepper motors. PFM is clearly advantageous at modulation index higher than 0.4, thus the realization of a versatile power modulator allowing on-the-fly switch between space vector PWM and space vector PFM, coupled with a fast current loop achieves lesser switches, a finer torque ripple control, and satisfies many of the motor control applications.
08. – 10.05.2012, Nürnberg
High Performance Motors and Electric Drives Very high performance drives– up to 1 Mio rpm Christoph Zwyssig, Celerotron, CH
Analysis and Design of a High Force Density Linear Electromagnetic Actuator Jiabin Wang, Kais Atallah, James Barns, University of Sheffield, UK
Construction of a High Force Density Linear Motor with a Passive Stator using Transverse Flux Technology Marek Siatkowski, Bernd Orlik, University of Bremen, D Winner of the Young Engineer Award The IALB has developed a synchronous permanent magnet linear motor with a passive, and therefore cost effective, stator. It is using transverse flux technology and achieves a force density above 50kN/m², which makes it suitable as a linear direct drive. Operation principle, manufacturing investigations and measurements will be presented in this paper. Magnetic Bearing for Grind Ball Alexander Norbach, University of Bremen, D The aim of the research project is to develop small modular treatment units for the micro cerium tension and to make it available within the project. The aim of IALB is to develop to the magnetic bearing for this problem. Further a regulation should be realised which allows it the grind ball to position magnetically in a stable point and unknown sturgeon dimensions in 3D to control.
Progress in Wide Bandgap Technology Gate Oxide Reliability Assessment of the Cree 1200 V Z-FET™ Mrinal Das, Jim Richmond, Sarah Haney, Zoltan Ring, Anant Agarwal, John Palmour, Cree, USA Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of the Cree 1200 V Z-FET This paper discusses the key reliability results from tests to failure (TDDB) and from tests to pass (HTGB and HTGS) that predict that the Cree 1200 V Z-FET product CMF20120D will demonstrate low failure rate and stable operation in the field. Ultra low Ron SiC Trench devices Keiji Okumura, Nobuhiro Hase, Kazuhide Ino, Takashi Nakamura, Masanori Tanimura, ROHM, J Winner of the Best Paper Award The paper presents SiC Schottky diodes and MOSFETs with trench structure. Firstly SiC Schottky diodes with newly developed trench structure showed the lower forward voltage drop than conventional SiC diodes while keeping leakage current at acceptable level. Secondly, SiC MOSFETs with double-trench structure was developed. The new structure effectively reduced the highest electric field at the bottom of the gate trench which caused oxide destruction, thus robustness of the device has improved. New SiC thin wafer technology paving the way of Schottky diodes with improved performance and reliability Vladimir Scarpa, U. Kirchner, A. Kern, Infineon Technologies Austria, A ; R. Gerlach, Infineon Technologies, D This paper presents the new thinQ! 5thGenerationof SiC Schottky Diodes, from Infineon Technologies. Based on a new and exclusive production process, both the capacitive charge, Qc, and the forward voltage, Vf, have been minimized. Resulting devices present then better performance with respect to counterparts from former Thin!Q 2nd. and 3rd. generations, under both light and heavy load operations. Application tests are indicating the excellent performance.
08. – 10.05.2012, Nürnberg
Converters for Wind/Hydraulic Energies Island grid control with independent wind power stations based on fully-fed synchronous generators
Florian Fein, Markus Schmidt, Bernd Orlik, University of Bremen, D Presentation of an island grid control concept with independent, parallel, wind power stations based on fully-fed synchronous generators. A unified model has been established comprising island grid control and wind power station control. The model includes the physical behaviour of the rotor, a permanent magnet synchronous generator (PMSG) and a frequency inverter. The control structures for both the grid-sided and generator-sided inverter will be given. Behavior of a steam power plant in a wind power station to avoid grid oscillations and add primary control Markus Schmidt, Florian Fein, Bernd Orlik, University of Bremen, D The behavior of a wind power station is changed to a steam power plant for supporting the power grid. A new method is implemented instead of conventional control strategies today. A model of a separately excited synchronous generator with amortisseur is able to damp oscillations. An interaction with the power grid is realized by a primary control such as in a steam power plant. Modified Control Structure for Single Phase Z-Source-Inverter and Efficiency Analysis Manuel Steinbring, Jose Mario Pacas, University of Siegen, D This paper introduces a modified control structure for controlling the boost factor of a single phase z-source-inverter. Wher the output voltage instead of the cpacitor Voltage is controlled. The control scheme should provide fast response simple implementation and high ruggedness. The method is proved on a laboratory implementation of the z-source-inverter. Further, an efficiency analysis of the z-source inverter is accomplished taking into consideration a variation of input voltage.
Advanced Power Modules IGBT inverter with increased power density by use of a low-inductance and high-temperature capable design Klaus Vogel, Daniel Domes, Infineon Technologies, D This study focuses on the increase of power density by raising the system efficiency and the maximum operation temperature. The better efficiency is achieved by using a low inductive system that allows the application of fast next generation IGBT chips. These chips have a maximum operating temperature of 175°C; 25K more than today’s state of the art devices. This higher operation temperature contributes also to more output power but at the same time requires a high-temperature-capable design.
New module concept for overall low inductance Daniel Domes, Reinhold Bayerer, Alexander Herbrandt, Infineon Technologies, D Increasing efficiency and lowering EMI are important goals for designing power electronic systems. To obtain this, the parasitic inductance of the current commutation loops is under focus. In this paper an overall low inductance module is shown which provides not only low inductance within the half bridge but also low inductance among half bridges itself, e.g. in a 3 phase inverter. The new module concept enables not only optimized 3 phase full bridge systems but also optimum performance of three level NPC (Neutral Point Clamped) inverters.
08. – 10.05.2012, Nürnberg
Numerical modelling of a high temperature power module technology with SiC devices for high density power electronics Paul-Etienne Vidal, Francisco Carrillo, University of Toulouse; Alioune Cisse, Gregor Massiot, Catherine Munier, EADS; F This paper presents the development of a high density packaging technology using wide band gap power transistors, such as silicon carbide (SiC) devices. These devices will be used in the next power electronic converters. They will provide higher currents, frequencies and functioning temperature. Thus the new designed packagings have to take into account such new constraints. The presented work tries to demonstrate the importance of packaging designs for the performance and reliability of high density integrated SiC power devices. In order to increase the integrated density in power modules, packaging technologies consisting of two stacked substrates with power devices and copper bump soldered between them were proposed in several configurations. Their thermo-mechanical behaviours are assessed by FEM modelling via ANSYS software.
Current Sensing Fast Current Measurement based on Enhanced Sigma Delta Technology Andreas Rath, Jens Onno Krah, UAS Cologne; Christoph Klarenbach, Beckhoff Automation, D Nominated for the Best Paper Award The paper presents a new approach of fast current measurement based on sigma delta technology for high performance motion control. Due to fast digital signal processing inside an FPGA the sigma delta quantization noise can be reduced significantly. This results in an up to 4 bit higher signal resolution or in a faster signal response time when the oversampling ratio is reduced. The new technique is compared with the commonly used sinc³ Filter approach. High Temperature Current Transducer with Enhanced Rejection of External Magnetic Fields Wolfram Teppan, Dominik Schlaefli, LEM, CH A high temperature current transducer with enhanced rejection of external magnetic fields is presented. Working principle, design, and application (aircraft actuators) are explained. The main features are small size, enhanced rejection of external magnetic fields and - most important for the application an operating temperature in the range between 65 °C and 225 °C. Results of FEM simulations are compared with measurement results. This work is part of an EU subsidized project CREAM. Integrated current sensor based on magneto-resistive (MR) technology Simon Scherner, Christian Nau, Sensitec; Andreas Nebeling, Wolfgang Schreiber-Prillwitz, Elmos Semiconductor, Germany, D A new anisotropic-magneto-resistive-effect (AMR) based current sensor system, based on a system-in-a-package approach is described. It is designed for high resolution and fast electronic measurement of DC, AC up to 500 kHz, or pulsed currents. As the concept is based on an external primary current bar, it can easily be adapted to a wide range of applications for different nominal primary current ranges by just altering the geometry of the primary current bar.
Power Quality Solutions Digitally Controlled Bridgeless PFC Converter without Inductor Current and Input Voltage Sensing Wenqi Zhou, Manfred Reddig, UAS Augsburg; Manfred Schlenk, NMB-Minebea, D In this paper, a digitally controlled bridgeless PFC converter is presented. The current sampling method is based on diode current, which could be easily realized. Detailed sampling algorithm and circuit are discussed. The digital control strategy in this paper does not require input voltage sensing, therefore the complexity of the controller and the circuit is further reduced. Finally theoretical analyses are experimentally verified by a digital controlled bridgeless PFC system.
08. – 10.05.2012, Nürnberg
A new Power Quality and Energy Monitoring Technology - Bringing SmartGrid on the Factory and Automation Floor Andreas Eberhard, Power Standards Lab, USA High Efficiency 500kVA UPS using Advanced-NPC Topology with RB-IGBTs as Bi-directional Switches Satoki Takizawa, K. Fujii, Y. Yamakata, Y. Okuma, Fuji Electric, J This paper describes a newly developed 500kVA UPS using advanced NPC (A-NPC) topology. This UPS adopts a double conversion configuration because of its inherent high reliability. And more, the high efficiency of more than 97% is obtained because of A-NPC topology in spite of a double conversion. So, this UPS is suitable for installation at Internet Data Center, for example.
Poster/Dialogue Session
Advanced Power Devices I New symmetric voltage suppressor with peak pulse power and increased power capacity Alexey Surma, Y. M. Loktaev, A. V. Stavtsev, A. A. Chernikov, Proton-Electrotex, RUS This article discusses design and technological features of silicone symmetric voltage suppressor with peak pulse power and increased power capacity. IGBT Leakage Current Prediction Paolo Soldi, J. Mari, M. Menzel, T. Zöls, GE Global Research; F. Carastro, GE Energy, D IGBT leakage current is a well-known indicator of device integrity. In addition, leakage current prediction can consistently help converter design as to protection concept development and prediction of thermal runaway, IGBT voltage balancing in off state and off-state losses. This work presents a simplified leakage current simulation model derived on the basis of semiconductor physics and of the results of a thorough experimental campaign and its validation against the experimental results. Design and Optimization of two kinds of robust 700V DR-LDMOS using a thin epitaxial technology Bon-Keun Jun, Namchil Moon, Chil Moon, Kyung-Wook Kwon, Chang-Jun Lee, Jong-Min Kim, Jae-Hyun Yoo,Hee-dae Kim, Joo-Won Park, Nam-Joo Kim, Kwang-Dong Yoo, Lou Hutter Dongbu HiTek, ROK In this paper, two kinds of robust 700V DR-LDMOS (Double RESURF LDMOS) using thin epitaxial technology has been realized for level shifter and switching applications. The P-TOP layer is introduced to reduce on-resistance while maintaining high breakdown voltage for switching applications, and to increase on-breakdown voltage using JFET resistance for level shifter. The result is that the breakdown voltage of the 700V DR-LDMOS for level shifter is 900V with on-breakdown of over 700V. In terms of switching applications, we have adopted HVPWELL layer of rainbow shape at source corner region to reduce n-type charge of N-EPI region and achieved the breakdown voltage over 750V. Comparison of output power and power cycling capability of BIGT and IGBT/diode inverters dependent on modulation degree and fundamental frequency David Weiss, Daniel Wigger, Hans-Günter Eckel, University of Rostock, D Bi-Mode Insulated Gate Transistors are a new class of power semiconductors, which integrate the functionality of IGBT and free-wheeling diode in one chip. With this devices the output current in comparison to an IGBT / diode module can be increased. Furthermore the power cycling stress of the module is decreased. In this paper the advantage of the BIGT inverter concerning output power and power cycling capability dependent on modulation degree and output frequency will be demonstrated.
08. – 10.05.2012, Nürnberg
Introducing the 5.5kV, 5kA HPT IGCT Tobias Wikström, Björn Backlund, Thomas Setz, Kenan Tugan, Thomas Stiasny, ABB Switzerland, CH A 5.5kV asymmetric IGCT has been developed based on the High Power Technology (HPT) platform for very high SOA in large-area IGCTs. The high power handling capability, efficient cooling and low losses makes the device suitable for application in medium voltage drives, traction inverters and high-current circuit breakers. Analysis of Light Load Waveform of Synchronous Buck Converters during Dead-Time Yen-Tang Wang, Fairchild Semiconductor, TW The light load waveform of synchronous buck converters is quite different to heavy load waveform. During thedead-time, the switching-node voltage and High-side MOSFET gate voltage would be higher. This phenomenon may be confusing and misunderstood as an earlier conduction of High-side MOSFET. In fact, it is caused by the flow of negative inductor current, the charging of Low-side MOSFET drain-to-source capacitor (CDS), and the conduction of High-side MOSFET body-diode. A Hole Barrier IGBT with Enhanced Breakdown Voltage by a floating P well Giuseppe Consentino, Donato Corona, S. Amara, A.Grimaldi, S. Pisano, G. Sammatrice, STMicroelectronics, I The breakdown voltage drop due to Hole Barrier technological solution could be recovered by an epy specification fine tuning but we partially lose the advantages due to Hole Barrier layer.In the present paper we propose another solution to recover the breakdown voltage drop with a negligible impact on VCEsat value and above all without modifying the device epy specification. The solution consists in to realize a floating P- well under the body region which inverts the electric field slope by this way is possible to increase the area subtended by electric field and then to recover the breakdown voltage. We will name it EB-Hole Barrier IGBT.
Advanced Power Devices II Process simulation for feasibility of Double Side Polished: Mosfet and Schottky Diode Giuseppe Consentino, Monica Micciche', D. Cavallaro, G. Di Liberto, A. Grimaldi, A. Raffa, STMicroelectronics, I A novel double-side semiconductor structure is reported: mosfet device and schottky diode are integrated in a double polished wafers. The article illustrates the simulation work to set up the process in order to realize an integrated structure: Schottky diode with a low voltage MOSFET The schottky cathode is connected to the MOSFET drain the two structures are made using the two-side wafer double side polished [1]. Double side polished wfs are typically required in semiconductors, MEMS, and other applications where wfs with tightly controlled flatness characteristic are required. These wafers are also needed for double side pattering project: on both side can be appropriately sized epitaxial grown able to develop the Mosfet and Schottky diode. Top-Layout Design Influence on Electrical Performances and Short-Circuit Ruggedness of a Thin-wafer Trench-Gate IGBT Antonino Sebastiano Alessandria, Maria Silvia Cannizzaro, Domenico Fagone, Leonardo Fragapane, STMicroelectronics, I This paper aims to investigate the role of the top structure design on the electrical performances of a Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT, suitable for all the applications where the short-circuit withstanding time is a key parameter. Electrical characteristics and consequent results have been displayed and discussed in the case of a 1.2KV prototype, manufactured on thin wafers (110 µm) in STMicroelectronics. Scaling of chip-level to module level for RC-IGBTs and conventional IGBTs Daniel Wigger, David Weiß, Hans-Günther Eckel, University of Rostock, D Proper scaling of single chip measurements to module-level is an important task during the development of power semiconductor chips. In this paper it is shown how different the comparison between conventional IGBT modules and RC-IGBT modules can be on chip-level and on module level.
08. – 10.05.2012, Nürnberg
Surge current behavior of turned on 600 V IGBT² Ole Binder, Björn Bünsow, Michael Kurrat, Ernst-Dieter Wilkening, Braunschweig University of Technology, D The surge current behavior of IGBTs is presented. Surge currents can be generated by switching operations in electrical grids or by lighting. Such currents are shot to turned on IGBT. The parameters gate-emitter-voltage, case temperature and current-amplitude are varied. Some oscillograph show diverse phenomena during surge current test. At the end the surge current capability is shown. AlphaIGBTTM – Making IGBTs efficient and easier to use Roland Weber, G. Moxey, F. Wang, A. Bhalla, Alpha & Omega Semiconductor, D IGBTs have made steady improvements over the years and the move to Trench based technologies have raised the coupling that exists between gate and collector, leading to issues under high dV/dt conditions increasing total system losses. A new cell structure will be introduced offering an excellent VCESAT vs EOFF trade-off while maintaining a low Qgc/Qge ratio simplifying the use of these devices. The paper will cover the general characteristics of the AlphaIGBTTMs, and examine parallel operation. Short-circuit behavior of diodes in voltage source inverters Steffen Pierstorf, Hans-Günter Eckel, University of Rostock, D Nominated for the Best Paper Award Short-circuit ruggedness is an important feature of IGBTs in voltage source inverters. The short-circuit behavior of the diode strongly depends on the switching state of the antiparallel IGBT. In this paper, the two different short-circuit types of diodes are discussed and the difference to the normal reverse recovery is explained. For the first time, the short-circuit type IV stress for diodes after a very short conduction time is experimental evaluated. Simple Turn-off description of trench field stop IGBT - IGBT3/3.3kV Daniel Heer, Reinhold Bayerer, Infineon Technologies, D Trench-fieldstop IGBT show a significant carrier storage effect during turn-off. A simple equivalent circuit and elements are introduced to describe the behavior at turn-off with respect to drive conditions, current dependancy and ontime dependancy. The special test setup to describe the datailed IGBT characteristics will be presented, as well.
Wide Bandgap Devices Si IGBT-SiC JBS Rectifier co-packs enable 28% lower power losses Ranbir Singh, Eric Lieser, Michael Digangi,Siddarth Sundaresan, GeneSiC Semiconductor, USA GeneSiC's s 1200 V/100 A hybrid co-packs feature high performance, Si IGBTs and in-house designed and fabricated SiC freewheeling Schottky rectifiers. Novel design and fabrication techniques employed for fabricating these SiC Schottky rectifiers result in > 225 °C operation capability, industry's highest surge current ratings and lowest capacitive losses. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC's GA100CXCP12-227 co-pack offers a 88% and 47% loss reduction. SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability Ranbir Singh, Eric Lieser, Michael Digangi,Siddarth Sundaresan, GeneSiC Semiconductor, USA 1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are Gate-oxide free, normally-off, quasi-majority carrier devices distinguished by square reverse biased safe operating area (RBSOA), low leakage currents of < 100 µA at 325 °C operating temperature, turn-on and turn-off switching transients of < 15 ns at 250 °C, maximum Common Source current gains of 88 and low on-resistance of 5.8 m -cm2. Two-stage cascaded SJTs display a record high current gain of 3475.
08. – 10.05.2012, Nürnberg
Performance evaluation of the new 1200V SiC JFET Matthias Tauer, Michael Patt, Finepower, D Wide bandgap materials like silicon carbide (SiC) offers new types of power semiconductors like the 1200V SiC JFET or SiC MOSFET. Towards 1200V IGBTs the benefits of the SiC JFET are faster turn on and off times. The outcome of this are reduced switching losses which facilitate higher switching frequencies needed for cross section reduction of magnetic components. SiC JFETs are interesting devices with potential for efficiency improvement in high voltage inverters or dc/dc converters. Characterisation and evaluation of 1700V SiC-MOSFET modules for use in an active power filter in aviation Sebastian Liebig, Jürgen Engstler, Alfred Engler, Liebherr Elektronik; Josef Lutz, Chemnitz University of Technology, D The rising number of electrical systems in airplanes and their power ratings, results in new grid architectures. A possible topology comprises several sub-networks with an active power filter maintaining the power quality at the connection point to the main bus. This paper presents the characterization and evaluation of 1700V SiC-MOSFET modules for use in an active power filter in aviation, which requires high switching frequencies and robust semiconductor technology against cosmic radiation. Reverse recovery behavior of the body diode of the SiC MOSFET Tobias Appel, Hans-Günter Eckel, University of Rostock, D In this paper, the reverse recovery behaviour of the body diode of a SiC MOSFET is evaluated. The reverse recovery current has three parts. Due to the junction capacitance, there is a capacitive current. The high dv/dt of the opposite MOSFET which is turned on leads to a positive dvDS/dt of the DUT. This may lead to a parasitic turn-on and thereby to an additional current. The third part is the reverse recovery current.
GaN-on-Si solutions with in-situ passivation for fast switching 600V devices Marianne Germain, Joff Derluyn, Stefan Degroote, EpiGaN, B GaN-on-Si is the most attractive widebandgap technology for next-generation of 600V power electronics in terms of performance combined with cost-efficiency: high uniformity, crack-free 150mm GaN-on-Si epilayer design optimization is described. In particular, highly uniform buffer, low sheet resistivity channel (SiN/AlN/GaN barrier design) and in-situ SiN passivation layers are presented.
Converter Control and Drive I Dimmer-ballast compatibility for low-consumption lamps Laurent Gonthier, Benoit Renard, STMicroelectronics, F It is well known that dimmers could not work correctly with new dimmable low-consumption lamps, such as CFLs or LEDs. This is mainly because ballasts and dimmers are designed by different engineering teams, and because there is a lack of international standards to define how the dimming control should be set for all lamps and dimmers put on the market. We explain in this paper the different points which have to be correctly set for both lamp ballasts and light dimmers to make them work together. Failure Characteristics of Parallel Converters Stefan Schmitt, BLOCK Transformatoren-Elektronik, D Paralleling multiple power supplies or converters has a number of advantages, especially for reliability and availability. If a single converter fails, it has to be disconnected to ensure reliability. The detection and handling of various failure modes is examined, with a focus on open-loop failure and overvoltage of a single converter.
08. – 10.05.2012, Nürnberg
Innovative Event Driven State Machine (SMED) Peripheral for Digital Control of Power Conversion & Lighting Applications with 8bit Microcontrollers Ales Loidl, Jakub Hajek, Giuseppe Bosiso, Ignazio Salvatore Bellomo, STMicroelectronics, CZ An innovative state machine driven by events was developed to overcome limitations of general purpose microcontrollers. Each SMED unit has 3 flexible inputs, e.g. for analog comparator's signals and 4 timing registers for full control of the switch in the converter. With the coupling interface, several SMEDs can be interconnected to control complex schemes like full bridges with 4 switches. It provides an efficient approach for driving LED converters, resonant converters or lighting ballasts. Power Line Communication for a high insulated power Lilia Galai, Bertrand Revol, SATIE ; Francois Costa, UPEC, F Nominated for the Young Engineer Award In order to reduce weight and volume of power transformer actually existing in trains, multilevel converters directly linked to the catenary are intended to be developed. So, each component of the power electronic system has to be insulated for a voltage of 60kV. This paper addresses the problem of insulation of the voltage regulation of the power converter supplying the drivers used in a high-voltage power converter. Usually, the sensors used for the regulation and the power system have the same level of insulation. In order to reduce size and weight and to keep a high-level insulation for the driver supply, a Power Line Communication (PLC) is used. Achieving Ultra Low Standby Power Consumption of Switched Mode Power Supply Hangseok Choi, Fairchild Semiconductor, USA These days, the environmental impact of energy wasted by electrical appliances when not in use has attracted growing attention in the international community resulting in a number of regulations on the standby power consumption. This paper presents loss breakdown of switched mode power supply (SMPS) in standby mode and proposes several new techniques to reduce the standby power consumption.
Converter Control and Drive II Full Digital Implementation of an Optimized Modulation Strategy for Series-Parallel Resonant Converter Zhiyu Cao, Junbing Tao, Meng Sun, Norbert Fröhleke, Joachim Böcker University of Paderborn, D Series-parallel resonant converter is one of the most favorite topologies among resonant converters. In order to minimize its switching losses an optimized modulation strategy was proposed and implemented using a hybrid hardware structure. In this contribution a full digital implementation of the optimized modulation strategy based on FPGA hardware is introduced. Simulation results are given to proof the feasibility of digital implementation. Measurement results will be provided in the paper. The improved burst mode in the stand-by condition of switching mode power supply Xiaowu Gong, Infineon Technology Asia Pacific , SGP Reducing standby power losses attracts a lot of attentions for SMPS due to global energy shortage. In this paper, behaviors and limitations of existing solution for reducing standby power is reviewed, and then one new technique is proposed to make sure entering burst mode power and leaving burst mode power to be same for high & low line condition and improve the performance of existing burst mode operation, and avoid audible noise in the system during light load conditons. Parametric Design Guidelines for MW Oven Inverter Cesare Bocchiola, International Rectifier, I Today's Microwave ovens are equipped with inverterized MW generators. The electronic power supply is a Single ended parallel resonant inverter driving an HV transformer, followed by a voltage multiplying rectifier, needed to provide the 4-6kV DC requested by the magnetron. In this paper, parametric design analysis for single ended converter aimed to MW ovens is presented, and results compared with Pspice® simulation and practical measurements on a commercially available magnetron inverter.
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Low Harmonic Rectifier Using 12-pulse Current Splitter/Merger Andrzej Pietkiewicz, Schaffner EMV; Kurt Schenk, NTB University of Applied Sciences, CH In this paper a novel low harmonic rectifier for medium and high power applications is presented. The introduced device - the 12-pulse current splitter/merger (CSM) - can replace a 12-pulse transformer at a fraction of the weight and size. The resulting input current waveforms are similar, whereas the losses and immunity against voltage imbalance are much enhanced. Which Power MOSFET technologies in LLC HB converters? Giuseppe Consentino, Antonino Gaito, STMicroelectronics, I This technical article gives an overview on LLC DC/DC converters and them operation principles and it explains how to choice the suitable power MOSFETs in the specific application. A real example of application will be shown and even the sizing of the power MOSFETs will be discussed based on the operating characteristics.
One-Quadrant DC Motor Drive with Nonlinear Step-Up-Down Characteristics Felix Himmelstoss, UAS Vienna; Karl H. Edelmoser, Vienna University of Technology, A DC drives are still very important, especially for low voltages and low power (e.g. in cars and robots). In this paper a converter is analyzed, which makes it possible to control the voltage across the machine (and therefore the speed) from zero to more than two times the input voltage with a nonlinear, flat dependence at low duty cycles. This enables high torque at low speeds with better efficiency and also higher speeds for duty cycles higher than about two-third
Mulitlevel and other advanced converters I Current Sharing in a Three-Phase Interleaved Converter for CCM with Measurement of one Current Jens Christian Schroeder, Marinus Petersen, Friedrich W. Fuchs, University of Kiel, D To improve the efficiency and to reduce the volume in dc-dc converters and their filters, interleaved converters are used. In these multiphase converters, appropriate active current sharing is neccessary due to the inherent current inequality caused by the parameter deviations between the components, especially the inductors. In this contribution, a new method is presented which allows the current sharing with one sensor without extra circuitry and computation effort.
Analytical Computation of Current Ripple for Interleaved Converters with Coupled Inductors Oneil Rodrigo Zarate Vargas, Hermann Wetzel, Volkswagen; Andreas Lindemann, Otto-von-Guericke-University Magdeburg, D An analytical model for the calculation of current ripple of interleaved converters with coupled inductors was previously reported in the literature. Unfortunately, this model is limited to the case where all phases of a converter are coupled together. In some practical cases, it might be more convenient to perform the coupling of inductors in groups. In this paper, an extended model is presented which is adequate for the calculation of ripple and RMS values of converter currents as well Study on next-generation two-stage architecture for synchronous buck converter in high power-density computing power supplies Tirthajyoti Sarkar, Mona Joshi,, Ritu Sodhi, Fairchild Semiconductor; C. V. Bhargava, Indian Institute of Technology Madras, IND; Steven Sapp, Fairchild Semiconductor, USA In this article, we focus on a cascaded two-stage buck converter approach for next-generation high power density computing power supplies. We illustrate some results which may yield key insights on (a) advantage of the two-stage approach with regard to increasing switching frequency, (b) distribution of loss between the two stages, (c) switching frequency partition which separates the two-stage solution from conventional single-stage approach, and (c) simplified power density comparison.
08. – 10.05.2012, Nürnberg
Multiphase resonant inverters for supercapacitor charging Nikola Gradinarov, Nikolay Hinov, Dimitar Arnaudov, George Kraev, Nikolay Rangelov Technical University of Sofia, BG A new topology of multiphase resonant inverters with limited voltage over the commutating capacitor (with energy dosing) is explored in this paper. In the document are present analysis and formulas for design of this kind of inverters, when they are used as high frequency power supplies for charging capacitors and batteries. In the paper are shown the advantages of the proposed new topology in comparison with classical circuits for charging capacitors. Comparison of Output Rectifier Topologies in Case of a Low-Profile LLC Converter Christian Oeder, Alexander Bucher, Thomas Dürbaum, University of Erlangen, D Based on the mathematical description in the time domain, a low-profile resonant LLC converter is designed with respect to a typical notebook adaptor application. Special attention is paid towards a low-profile design of the magnetic component. Furthermore, three different output rectifier topologies are compared in terms of efficiency.
Response Time Study for High Voltage Power Supply Based on Voltage Multipliers Saijun Mao, GE Global Research Center, CN This paper investigates the rise and fall response time for high voltage power supply which is critical for industrial inspection applications. The key factors which influence the responase time such as swithing prequency, resonant tank current, and voltage multiplier capacitance are studied. The 3-stage discharging procedure for voltage multiplier fall time is detailed analyzed in the paper. The hardware prototype is built in lab to demostrate the concpet
Mulitlevel and other advanced converters II Achieving Peak Current Controlled Cuk Converter Stability Nicola Femia, Walter Zamboni, A. De Nardo, University of Salerno, Italy In this paper, both large signal and small signal averaged models of Cuk converter are analyzed. A novel refined small signal model of the peak current controller is derived. A reduced-order small model of peak current controlled Cuk converter is also proposed. The use of such model allows to derive analytical stability boundaries for Cuk converter. Simulations prove the validity of the results. Minimizing Power Components of Isolated DC-DC Converters Giulia Di Capua, Nicola Femia, University of Salerno, I Design of isolated DC-DC converters is discussed in this paper. A methodology for the minimization of power components is presented, which is based on the search of the set of commercial devices ensuring the most convenient size vs losses trade-off. The correlations among operating conditions, stresses, losses and physical parameters of silicon devices and transformers are used to achieve a formal classification of design solutions. Comparison of Transformerless Multilevel Topologies for Photovoltaic Application Concerning Efficiency, Leakage Current and Mechanical Volume Fabian Gebhardt, Hauke Vach, Friedrich W. Fuchs, Christian-Albrechts-University of Kiel, D Multilevel topologies reduce the weight and volume of inverter systems. In this paper three transformerless multilevel topologies are compared concerning efficiency, leakage current and mechanical volume. The investigated 5 level topologies are the NPC, the MMC and the FC inverter. After explaining the working principles the topologies are compared mathematically and by simulation. The most suited topology is built up for measurements and is compared against a 3 level NPC inverter in practice.
08. – 10.05.2012, Nürnberg
LCL filter design for an NPC three-level three-phase grid-connected inverter Daniel Montesinos-Miracle, Jordi Benet-Barberan, Marc Pagès-Giménez, Samuel Galceran-Arellano, Antoni Sudrià-Andreu, CITCEA-UPC, E This article analyzes and designs an LCL filter for a three-phase three-level NPC inverter connected to the grid using SVPWM. The design is based on determining the value of the first inductor to limit the current ripple and, capacitor and second inductor value to attenuate the harmonic content generated by the switching. The design of the first inductor is based on current shape on each switching state, obtaining the maximum ripple. The design of the CL filter is based on attenuation. A new circuit topology of Modular Multilevel Converter (MMC) with an open end transformer Anandarup Das, Hamed Nademi, Lars Norum, Norwegian University of Science and Technology, N Nominated for the Young Engineer Award This paper introduces a new circuit topology of Modular Multilevel Converter (MMC) with an open end transformer. In conventional MMC, two arm inductors are inserted in each phase of the converter to limit the circulating current. In the proposed topology, the arm inductors are replaced with a transformer. Apart from limiting the circulating current, this topology will also reduce the dc link voltage of the converter by half thereby using power devices and capacitors at half the voltage rating, compared to conventional MMC. The topology can thus be beneficial for motor drives and HVDC transmission systems.
Converter and EMI I How to maximize SSCG technique effects in order to improve EMI of Stepper Motors driver Alessandro Priscoglio, A. Longhitano, STMicroelectronics, I Description of theoretical and practical methods for SSCG optimization in order to improve EMI in stepper motors driver applications. The method described in this paper has been applied in automotive environments, but it can be extended to other application areas. Frequency Domain EMI Noise Source Modelling for Power Converter Clement Marlier, University of Lille1, F The increase of electric energy in aircraft leads to EMI issues, because the use of power electronics converters induces sharp voltage and current variations. In order to simulate a system up to 50MHz, it is interesting to use frequency-domain analysis which induce short simulation times but cannot represent non-linear phenomena. We propose EMI noise source models with topology combination through convolution of appropriate "validity function" to overcome this drawback. New concept of low-loss, hard switching (LHS) Silvan Geissmann, Don Partridge, Eric Carroll, Munaf Rahimo, Ulrich Schlapbach, Raffael Schnell, Felix Jenni, UAS North Switzerland, CH The output current or the operational frequency of modern inverters is often thermally limited. While one can think of implementing faster switches in order to increase the frequency, this will increase the on-state losses. Another approach is the reduction of the switching losses with an external network. Such a network is built up as an inverter and waveforms are recorded. Furthermore, an outlook on the possibilities with optimized semiconductors is given. Development of a Wireless Dimmable CFL for Domestic Application on the Basis of Bluetooth Technology Alexander Pawellek, M. Weinmann, T. Duerbaum, University of Erlangen, D The paper deals with the development of a wireless dimmable CFL and LED lamp The Bluetooth standard fits this task perfectly, since nowadays virtually all devices, e.g. smart phones and computers, include a Bluetooth transceiver. The required steps to integrate such features into an existing, dimmable ballast will be concluded, as well as the exemplary migration of the Software component on an Android O.S. device.
08. – 10.05.2012, Nürnberg
Dynamic Study of the Phase-Controlled Parallel-Series (LCpCs) Resonant Converter to Drive High-Brightness Power LEDs Christian Branas, F. J. Azcondo, V. M. López, A. Navarro, R. Casanueva, F. J. Díaz, University of Cantabria, E This paper presents the dynamic study of a phase-controlled resonant converter suitable to drive high-brightness light emitting diodes (LEDs) lamps. To deal with the dynamic study of the transfer function of the control angle to output current, the envelope model of the resonant network is reduced to an equivalent L-R circuit. The approximate mathematical form of the transfer function is obtained using the new reduced-order envelope model.
Converter and EMI II Frequency Dither Circuit for Electronic Ballast EMI Reduction Peter Bredemeier, Tom Ribarich, International Rectifier , D The new control circuit demonstrates complete control of the ballast, including all necessary lamp functionality. The new frequency dithering feature demonstrates a dramatic reduction in EMI that allows the filter inductor size and cost to be reduced. The simplicity of the complete circuit allows for the design to be realized in a small 8-pin package. This offers further cost and size reduction of the electronic ballasts as well as increased reliability and manufacturability. Simple Control Circuits for Electronic Ballast Design Tom Ribarich, International Rectifier, USA This paper presents new and simplified control circuits for a variety of electronic ballast circuit topologies. These include non-PFC circuits as well as passive and active PFC. This paper introduces the designer to the main functional blocks of an electronic ballast, describes the different circuit topologies and their respective control circuits, and provides complete schematics and experimental results for each design. Synthesis of input line current in Power Factor Correction control for optimal converter operations Maurizio Salato, VICOR, USA Power Factor Correction (PFC) controls have been traditionally designed by means of multiplier (or equivalent) blocks, in order to drain a line current whose shape closely follows the input line voltage. This approach forces the operation of converters over a condition range far from optimal (particularly, in close proximity of line zero crossing). This paper describes a digital control that forces a particular line current shape, which avoids the issue and meets all applicable EMI/EMC standards Practical Evaluation of Rectangular-Voltage-Fed Distribution System Yasuyuki Nishida, Hiromichi Oyama, Chiba Institute of Technology, Takaharu Takeshita, Nagoya Institute of Technokogy, J This paper shows practical evaluation of the rectangular-voltage-fed three-phase distribution system loaded by a three-phase diode rectifier. Based on experimental date obtained from a 4 [kW] setup, it is shown that the proposed rectangular-voltage-fed three-phase distribution system offers almost unity Total-Power-Factor under rectifier load condition. Reduction of Total Harmonic Distortion (THD) for Interleaved Converters Operating in Discontinuous Conduction Mode (DCM) Tobias Grote, Delta Energy Systems; Sven Bolte, Norbert Fröhleke, Joachim Böcker, University of Paderborn, D With interleaving the THD can be reduced significantly. At particular duty ratios the harmonics are totally eliminated. Thus, with specific phase shedding depending on the duty ratio the THD can be further reduced. If converters are operated in discontinuous conduction mode (DCM) the DCM ratio can be used for a continuous phase shedding method where also fractional numbers of energized phases can be applied. This method is used to minimize the THD for the entire duty ratio range.
08. – 10.05.2012, Nürnberg
Measuring Power Supply Noise with an RSA Steve Sandler, Picotest.com, USA Noise from the power supply, linear regulators, and voltage references is a major contributor to the limitations of system performance, especially in instrumentation and communications products. In ADC applications, the noise from regulators and references results in clock jitter, which can significantly degrade the ADC characteristics such as signal-to-noise ratio (SNR), signal-to-noise and distortion ratio (SINAD), and bit error rate (BER). LNAs also suffer from phase noise and modulation effects related to power supply noise. A Real-time Spectrum Analyzer, in conjunction with a high quality signal injector, offers two ways to measure power supply, voltage regulator, and voltage reference noise.
Motors & Magnetic Design
Algorithmic slot geometry determination for automated machine design process Quirin Hecker, Wolfgang Meyer, Hans-Georg Herzog, Munich University of Technology, D In this paper an algorithm is presented which realizes the total automated slot design. The algorithm is integrated in a design tool for electrical machines [1]. This enables the fully automated magnetic machine draft. The slot design is achieved by an iterative scaling process. Basis for the expansion of a slot is the selection of a slot shape by the user. Due to the growth law used here, the algorithm guarantees usable and not deformed slot shapes as a result.
A Detailed Step-by-Step Description of the Measurement of Absolute Inductances of Permanent Magnet Synchronous Machines Sven Ludwig Kellner, Bernhard Piepenbreier, University of Erlangen, D The paper presents a detailed description of the measurement process of the absolute inductances Ld and Lq of permanent magnet synchronous machines. Both the theoretical background of the inductance measurement such as the influences of iron losses and the actual realisation of the measurement process itself are discussed. While the test bench setup can be made fast and easy, the calculation of the inductances based on the measurement results is fairly complex. Modeling of a doubly fed induction machine considering iron saturation and skin effect Guido Tisborn, Christian Mehler, Bernd Orlik, University of Bremen, D This paper presents a main flux oriented model of a doubly fed induction generator (DFIG) which considers both saturation and skin effects. With this model it is possible to simulate the influence of grid disturbances on a doubly fed induction generator on a much higher level of detail than before. With this new model, it will be possible to develop new control strategies which can control the generator even in case of a grid disturbance. With this new concept the use of crowbars can be avoided.
Intelligent Motion A New Intelligent Power Module Device with the Fast Reverse Recovery MOSFET for Motor Drive Applications Bum-seung Jin, Min-sub Lee, Jun-ho Lee, Jun-bae Lee, Dae-woong Chung, LS Power Semitech, ROK This paper introduces a new CIPOSTM (Control Integrated Power System) in DIL (Dual-in-line) package with transfer molded type, which combines with the features of the fast reverse recovery technology MOSFET and optimized SOI (Silicon On Insulator) gate driver to achieve the excellent solution for low power motor drive application. Especially, this module offers the smallest package size with high efficiency under 1A RMS current area for refrigerator in home appliances.
08. – 10.05.2012, Nürnberg
Elastically coupled multi-mass-systems considering tooth engagement forces Christian Mehler, Matthias Joost, Bernd Orlik, University of Bremen, D Gearboxes are used to adapt torque and rotational speed of the drive to the load conditions. The drive train can be considered as multi-mass system which is characterized by its resonance frequencies. The stimulation of resonance frequencies caused by the tooth engagement depends directly on the rotational speed. This paper presents a method to regard the influence of the tooth engagement on the appearing torque. The simulation results are validated by measurements at a single stage gearbox. Efficiency improvement of induction machines with load-dependent rotor flux control Rudolf Mecke, UAS Harz, D The paper presents the energy saving potential of induction machines by using variable rotor flux, which has to be adapted to the actual load and speed of the motor. The calculation of optimal rotor flux curves includes the non-linear main inductance, the iron, friction and windage losses and the motor frequency. This distinguishes this paper from former scientific works. The investigations are carried out at an 11 kW asynchronous machine with 2 pole pairs. A significant increase in efficiency and power factor can be reached as well as in motor and generator mode. The greatest improvement occurs at low speed operation. Impact of Three-Phase Current Measurement on Field-Oriented Control Sebastian Ebersberger, Bernhard Piepenbreier, University of Erlangen, D In electrical drive engineering, two level three-phase voltage source inverters are often equipped with just two phase current sensors. Based on the assumption that the sum of the three phase currents is equal to zero for every point in time the third phase current is calculated from the two measured ones. This turns out to be false, after detailed investigation of the common-mode behavior of the whole drive system. The signal quality of the measured currents in the rotor reference frame can be improved significantly by using three current sensors. In addition, better signal quality improves the performance of the field-oriented control. Detection of Circuitry Faults in Electrical Machines Ludwig Brabetz, M. Ayeb, F. Dräger, A. Flach, University of Kassel, D The early detection of failures in electrical vehicle drives is an essential requirement. The approach presented in this paper describes a new measurement and evaluation method that allows the precise on-board diagnosis of changes of the electrical resistance, e.g. due to the derating of connection systems or the interruption of even a single strand of the coil. As the method is based on the analysis of asymmetries, it is robust and independent of temperature or initial resistance values. FPGA-based PMSM Emulation: Concept and Verification Martin Oettmeier, Carsten Heising, Volker Staudt, Ruhr-University Bochum; Henrik Liebau, Henrik Jakoby, ETAS, D Hardware-in-the-Loop (HIL) systems allow the test of control hardware as well as control algorithms without the need of an expensive machine-testbench. In this paper a real-time simulation concept of a PMSM hosted on a HIL-FPGA is presented. In this context the tradeoff between short integration intervals and numerical errors is one of the main aspects. Comparisons between measurements and simulation results verify the presented concept.
Analysis of time/area performances of a FPGA-based sensorless speed controller for AC drive applications Lahoucine Idkhajine, SATIE, F
Keynote Solar Power Peter Zacharias, University of Kassel / ISET e.V., D
08. – 10.05.2012, Nürnberg
Special Session "High Frequency Switching Technologies & Devices for Green Applications" Efficient Power Electronics for the price of Silicon - 3D-GaN Technology for GaN-on-Silicon Ertugrul Sönmez, MicroGaN, D Today, the technical and electrical advantages of the AlGaN/GaN devices are understood and deployed successfully in RF application. To make these devices commercially successful for high voltage applications, also, new aspects needed to be considered. These aspects, which are of technical, topological and product strategical nature, are discussed and solutions are presented in this paper. The Status of HV GaN based Power Device Development at International Rectifier Michael Briere, International Rectifier, USA The major advantages of higher efficiency at higher density for GaN based power devices for use in conversion circuits for distributed power generation are reviewed. Device models for GaN based HEMTs are presented and compared to measured characteristics. Results of mixed-mode models of various power conversion circuits are presented and compared to measured data. The current status of the development and performance of the required 600-1200V rated GaN on Si based devices at IR are presented.
Silicon Carbide BJT’s in boost applications Peter Haaf, Fairchild Semiconductor, D; Anders Lindgren, Martin Domeij, Fairchild Semiconductor, S In boost DC/DC converters, typically used in PV inverters and PFC circuits, increased switching frequency make a big impact on both size and cost. Silicon Carbide (SiC) bipolar junction transistors (BJT's) offer low loss high speed switching combined with low conduction losses, which enables higher switching frequency and maintains high efficiency. Comparative High Frequency Performance of SiC MOSFETs Under Hard Switched Conditions Bob Callanan, Julius Rice, Cree, USA This paper discusses the comparative performance of SiC MOSFETs operating at high frequency (30 kHz to100kHz+) under hard switched conditions with competitive silicon (Si) switches. The performance of the SiC MOSFET will be compared with other 1.2 kV silicon MOSFETs and IGBTs. Opportunities and Challenges for Wide Bandgap Power Devices in Megawatt PE Applications Iulian Nistor, Munaf Rahimo, Liutauras Storasta, ABB Switzerland, CH Si semiconductors, packages and system topologies are continuously improving towards achieving higher power, efficiency, reliability and controllability. Wide bandgap materials such as SiC have been proposed for a long time as enablers of future power technologies, but their acceptance in MW Power Electronic applications has remained challenging until now. The goal of the paper is to understand & quantify the opportunities, but also the remaining challenges of SiC in such applications.
AC/DC Converters Performance Comparison of a Standard and a Holistic AC/DC Converter for computer applications Rosario Attanasio, F. Gennaro, STMicroelectronics, I Power converters for computer applications require high efficiency over the entire load range of operation and across the universal mains input voltage range.Their design is becoming more challenging and new conversion approaches, other than the standard ones are being investigated as possible alternatives, known as Holistic approach.This paper deals with the performance comparison of the two approaches, with focus on size and cost of passive components, efficiency and power quality.
08. – 10.05.2012, Nürnberg
DC Link Chopper for AC-DC adapters Bogdan Bucheru, Marco Davila, Ionel Dan Jitaru, Delta Energy Systems, USA Nominated for the Best Paper Award This paper introduces an innovative solution for reducing the value, the volume and the power losses of the bulk capacitor for single stage Flyback AC-DC converters by using the DC link chopping method. As an extra benefit of this solution, the power factor of the adapter is also improved and the conduction losses associated with the frond end of the converter are significantly reduced. Analysis of parasitic effects on passive compensation of common mode noise in a boost converter Martin Schmidt, Jürgen Stahl, Manfred Albach, University of Erlangen, D Passive cancellation of common mode noise is a very promising alternative to a conventional cm filter. In combination with a finite differential mode filter capacitor Cdm a second capacitor Cgnd is required to reach theoretically an infinite attenuation due to a perfect compensation. However, in practice this is prevented by the transformer's leakage inductance. An analysis based on frequency-response plots and phasor diagrams allows quantifying the influences. A Merged-Stage High Efficiency High Power Factor HB-LED Converter without Electrolytic Capacitor Mor Peretz, Michael Chen, Nikhil Goyal, Aleksandar Prodić, University of Toronto, CDN A merged converter topology that combines a power factor correction rectifier and a supply for high brightness LEDs used in lighting applications is introduced. In the merged topology a small film capacitor replaces a bulky and unreliable electrolytic capacitor existing in conventional systems. The converter also has a smaller volume and number of components than common 2-stage topologies used in LED lighting. A 15W prototype verify high power factor and peak efficiency of 90%. High-Efficiency LED Lighting Need Not be a High-Cost Proposition Andrew Smith, Power Integrations, USA There are significant challenges to overcome before LEDs can take over from existing technologies for lighting. Operating temperatures of LED light fixtures are much lower than for incandescent lights, yet an internal temperature of 100°C is not uncommon. This can be a problem for the reliability and lifetime of the driver circuit. Achieving a higher efficiency for the driver circuit would clearly be beneficial. This paper presents two LED driver designs to illustrate new developments.
DC/DC Converters An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters Networks Jean-Christophe Crebier, Trung Hieu Trinh, N. Rouger, Y. Lembeye, Grenoble Electrical Engineering Laboratory, F This article introduces an integrated converter structure based on CMOS dedicated power die and including a High Frequency (HF) transformer for galvanic insulation purposes. It is a generic and autonomous micro converter that can be assembled in a flip chip assembly on a PCB or ceramic substrate with decoupling capacitors. This micro converter can be used to supply floatting loads such as gate drivers for logic level power device or to interact with storage or PV elements for balancing purposes Cost-effective implementation of a digital controlled LLC resonant converter for application in Server- and Telecom PSUs Heiko Figge, T. Grote, N. Fröhleke, J. Böcker, University of Paderborn; F. Schafmeister, DELTA Energy Systems, D Whereby the good efficiency of the LLC converter was demonstrated before, the design engineer now is faced with the problem of a cost-effective and reliable implementation of the LLC converter. In this paper a design variant is presented, which combines the digital control facilities of a low cost DSP and his peripheral PWM features with the critical control needs of the synchronous rectification (SR), thereby discussing parasitic effects relevant to the SR control methods.
08. – 10.05.2012, Nürnberg
Resonant LLC and LCC Converter – Comparison Based on an Identical Hardware Set-Up Christian Oeder, A. Pawellek, T. Duerbaum, University of Erlangen, D The omnipresent trend within the field of power electronics towards miniaturization is pushing switching frequencies to higher levels. A suitable family of converters for high frequency operation are resonant converters. With the LCC and LLC converter, the two most promising topologies of resonant converters are pre-sented and compared in this paper. Based on the specification of a notebook adapter, two low-profile prototypes with a maximum converter height of 10 mm were designed and built.
A ZVS Half Bridge DC-DC Converter in MHz Frequency Region using Novel Hybrid Power Transformer Hari Babu Kotte, Radhika Ambatipudi, Stefan Haller, Kent Bertilsson, Mid Sweden University, S Winner of the Young Engineer Award The significant problems in increasing the switching frequency of converters to achieve low cost and high power density are increased magnetic and switching losses. This paper presents solution with the investigation of newly designed high frequency hybrid power transformer together with commercially available GaN MOSFETs. The maximum obtained energy efficiency of transformer is 98% with tested power density of 20 W/cm2 in 1 - 5 MHz frequency region. The maximum achieved efficiency of ZVS half bridge converter with this transformer is 92% in 2.5 - 4.0 MHz switching frequency range with characterized output power of 40W. This is to author's knowledge, the best efficiency ever reported for an isolated DC-DC converter in this frequency range and power levels. This work provides considerable step for the development of next generation ultra flat low profile isolated DC-DC converters. Smoothing Transformer for Differential Mode Noise Reduction Jürgen Stahl, R. Junghaenel, M. Albach, University of Erlangen, D Reducing differential mode noise of switching converters in an effective way is still an open issue. A thorough investigation of the filtering technique with integrated magnetics combined with a sensitivity analysis for various values, like mismatches in the coupling factor or the effective inductance is done together with an application to the boost converter. Furthermore, an investigation concerning the proper compensation region as well as the design of an integrated filter is addressed.
New Photovoltaic Energy Systems A novel single-phase transformerless PV inverter with innovative semiconductor technologies Mehmet Kazanbas, C. Nöding, T. Kleb, P. Zacharias, University of Kassel, D Nominated for the Best Paper Award This paper proposes a new single phase transformerless PV inverter topology with a coupled inductor to meet the requirements of high efficiency, small volume and low cost. The new topology provides a solution for an inverter with integrated step-up and step-down function specifically for use in PV systems with connection the public grid. The proposed circuit also allows flexible grounding configuration, at positive, negative, array midpoint and even operation with potential against earth. Design Optimization of a 250W Microinverter for Distributed Photovoltaic Applications Rosario Attanasio, F.Gennaro, G.Scuderi, STMicroelectronics; M. Cacciato, A. Consoli, University of Catania, I Nominated for the Young Engineer Award The objective of this paper is to analyze the design and optimization process of a Microinverter (MIC) topology to be used in distributed photovoltaic power plants. The proposed system consists of a High Frequency (HF) isolated, interleaved boost DC/DC converter and a Full Bridge DC/AC inverter. Experimental results of a 250W MIC prototype are shown together with some cost considerations to highlight outstanding trade-off between European efficiency higher than 94.5% and competitive cost.
08. – 10.05.2012, Nürnberg
Three-Level DC/DC Converter for Utility-Scale Renewable Installations Paul Drexhage, K. Haddad, SEMIKRON, USA In this paper, a two-stage approach is presented for tying a utility-scale DC source to the grid. In particular, a three-level DC/DC converter topology allows for impedance matching between source and a common DC bus. Two experimental 500kW converters have been constructed and operated independently to feed a grid-tie inverter in a 1MW demonstration circuit. Triangular Current Mode Operation of a Three Phase Interleaved T-Type Inverter for Photovoltaic Systems David Leuenberger, D. Christen, J. Biela, ETH Zurich, CH The T-type topology is widely used in photovoltaic systems as three phase grid interface. This paper proposes a novel triangular current mode operation (TCM) for an interleaved Ttype inverter, which enables zero voltage switching of all switches. For evaluating the performance of the modulation scheme, a comparison with hard switched topologies is performed. This shows that the interleaved T-type utilising SiC MOSFET's achieves outstanding efficiency values.
Gate Drives 1st Commercial SiC JFET Driver for Direct Drive JFET Topology Karl Norling, Christian Lindholm, Dieter Draxelmayr, Infineon Technologies Austria, A The normally-on SiC JFET has convinced with its low power losses, high reliability and robustness. To operate these emerging normally-on SiC JFETs to their full efficiency potential and at the same time safe has proven to be relatively complicated and spacious. This paper describes the first dedicated galvanically isolated unipolar gate driver with a bootstrap bootstrap operation optimized for the Infineon normally-on SiC JFET family utilizing the Direct-drive JFET concept. Get tuned – A new generation of driver IC including safe isolation by coreless transformer technology (1ED+) Andre Arens, Peter Kanschat, Ulrich Schwarzer, Harmut Jasberg, Ralph Danklefsen, Infineon Technologies, D This paper describes the development of a new reinforced isolated driver with the possibility controlling the switching behaviour of the IGBTs which minimizes the costs for external filter components. In addition to the safety features, the development also focuses on a driver which can be assembled in the majority of today's drives. High reliability 1200V High Voltage Integrated Circuit (1200V HVIC) for half bridge applications Masahiro Yamamoto, Liang Xiaoguang, Manabu Yoshino, Takanobu Takeuchi,You Habu Mitsubishi Electric, J; Marco Honsberg, Mitsubishi Electric Europe, D This paper reports a high reliability 1200V half bridge driver integrated circuit (1200V HVIC: M81738FP). And it is suitable as the driver for Power MOSFET/IGBT modules. M81738FP with a new wafer process is the succeeding product of 1200V HVIC(M81019FP). The high performance against latch up of M81738FP is realized by N+ Buried Layer of the 2nd generation structure of divided RESURF. Parasitic inductance in gate drive circuits Reinhold Bayerer, Daniel Domes, Infineon Technologies, D Gate inductance is often overseen as being a bottleneck for fast gate voltage changes, which happen during short circuit conditions. the problem will be expained, a rule for design of gate drive topologies will be presented and examples of low inductive, low impedance will be shown.
08. – 10.05.2012, Nürnberg
Full digital controlled Gate Drive Unit for High Power IGBT Karsten Handt, H. Koehler, M. Hiller, R. Sommer, Siemens, D A novel, fully digital controlled Gate Drive Unit for High Power Insulated Gate Bipolar Transistor (IGBT) is introduced. The adaptation of this novel GDU for a dedicated IGBT Module or a special application becomes very simple and efficient by just setting parameters in the digital control. The change of hardware components is not necessary. It is possible to communicate with the Gate Drive Unit during operation and so it is possible to change all parameters "on the fly".
Reliability Power Cycling Capability of New Technologies in Power Modules for Hybrid Electric Vehicles Christian Herold, Josef Lutz, Chemnitz University of Technology; Alexander Hensler, Siemens; Markus Thoben, Thomas Gutt, Infineon Technologies, D Nominated for the Best Paper Award and the Young Engineer Award This paper presents some results of the joint research project "Electric Components for Active Gears (EfA)". The cooling of the power electronics is done by the cooling circuit of the combustion engine, which can reach temperatures up to 120°C. Therefore, the maximal junc-tion temperature must be up to 200°C. Main challenge is the power cycling capability. With improved packaging technologies, this requirement can be fulfilled. Bond wire life time model based on temperature dependent yield strength Samuel Hartmann, Emre Özkol, ABB Switzerland, CH Advanced interconnection technologies as Ag diffusion sintering eliminates the impact of solder fatigue. The replacement of Al wire bonds by Cu wire bond requires the transit from Al surface metallization to Cu contacts, which implies considerable challenges to the chip technology. Implementing Cu wires with a cladding of Al is compatible with standard chip technology and allows multiplying the reliability of power modules without the need for Cu contacts on chips. Improvements in Reliability without the need for change Kim Evans, Mark Addlesee, David Newcombe, Dynex Semiconductors, UK In order to meet the ever increasing environmental demands in power electronic packaging there is a continual drive toward the introduction of new and novel materials and processes to achieve the desired product life. Knowledge of the wear out mechanisms and the rate of failure are essential to the prediction of life of any product. This paper will demonstrate the methodology to accurately quantify package design performance prior to introduction of new technologies. Improvements in standard wire bond and chip mount down is compared with performance when using new technologies such as silver sintering.
Cooling Analytical and Experimental Characterization of Erosion Effects According to Pin-Fin Shape in Electronics Cooling Loops Ralph Remsburg, J. Gilmore, Amulaire Thermal Technology, USA A numerical and experimental study of nickel-plated copper heat sink erosion is presented. Copper heat sinks are often plated with nickel. Some sharp-edge pin-fin shapes have better heat transfer, but there are no long term use studies of these pin-fin shapes in automotive cooling loops. This study shows that pin-fins with sharp edges, i.e. square and diamond shapes, are prone to particle erosion/corrosion and may not survive automotive lifetime requirements as well as rounded pin-fins do.
08. – 10.05.2012, Nürnberg
Pushing the limits of liquid cooling: Design and analysis of a direct cooling system for power modules Jesus Moreno, Matt Reeves, Peter Beucher and Sy-Jenq Loong, Wolverine Tube, USA Design and analysis of a new direct cooling integrated system for power modules will be presented in this work. It is concluded that the new proposed integrated cooling concept could improve up to 50% the thermal performance of the system. Moreover, achieved low thermal resistance values allow to develop high performance baseplates and take advantage of the promising micro deformation technology (MDT) to create optimal fin and pin geometries "pushing the limits" of liquid cooling. Investigation of Pulse Overload-Behavior of a High Current Connector with Transient-Thermo Electric FEM Simulation Olaf Bochow-Ness, A. Grams, E. Hoene, S. Huber, H. Pötter, T. Prewitz, O. Wittler, F. Wüst Fraunhofer IZM; R. Gugel, H. Eberbach, John Deere Werke Mannheim; W. Müller, K.-D. Lang, Technical University Berlin, D The selection process of high current connectors in the range of 100A has to consider coninous and pulse overload conditions. To avoid overdesigning a better understanding of internal hot-spot temperatures is needed. Due to the design of the connector a direct sensor attachment close to the hot spot is not feasable. Based on IR thermal imaging measurements on connectors with puls current overloads (8000Arms, 100ms) a thermal-electric FEM model for hot-spot calculation is developed.
Power Electronics in Automotive, Traction and Aerospace Increasing Packaging Density and thermal Performance with minimized Parasitics for High Power Inverters Thomas Gottwald, Christian Rössle, Schweizer Electronic, D The p² Pack Technology, is a new architecture for Power inverter systems to further improve reliability, thermal conductivity at lower system complexity and lower cost. It also meets the challenge of minimized installation space due to its low thickness. Chip embedding technologies of the PCB Industry are used to embed thin bare dies (MOSFETs or IGBTs) into a multilayer construction. This thin package enables the combination of Power inverters with its logic control into one single PCB. Characterization of SiC MOSFET dual modules for future use in railway traction chains Joseph Fabre, Michel Piton, ALSTOM Transport; Philippe Ladoux, University of Toulouse, F Nominated for the Young Engineer Award Today, some manufacturers are offering Silicon Carbide (SiC) MOSFET modules which seem very promising to improve the traction drive performance. Thus a drastic decrease of the switching losses should lead to increase the efficiency as well as the power/volume ratio. Although SiC MOSFET modules are still limited by a breakdown voltage equal to 1200V, it is already interesting to evaluate their characteristics. Energy Saving Operation for Railway Inverter System with SiC Power Module Tomohiro Kobayashi, Y. Nakashima, K. Kaneko, Y. Yamashita, A. Murahashi, Mitsubishi Electric, J 30% energy saving was obtained in the railway inverter system which are realized by using the SiC power module consisting of Si-IGBT and SiC schottky barrier diode by motor drive operation designed to expand regenerative brake region. 9kW Isolated DC-DC Converter for Hybrid Bus Alexander Isurin, Vanner, USA This paper describes an isolated DC-DC converter, such as those that become popular on hybrid buses. This converter has 9kW output power with efficiency - 94 to 95% and CAN-bus communication that allows complete integration in the electrical system of a bus. It is completely soft-switched. It has a cost-effective design: at least 10% lower than a comparable phase-shift topology converter.
08. – 10.05.2012, Nürnberg
Energy Storage Autobus with four minutes recharges at the ends of the line Daniel Chatroux, CEA, F Standard electric buses use battery energy storage for all the day long and night charges. The high energy imposes high weight, volume and cost with impact on bus performances and a long return of investment. The ElLiSup project is based on a small battery, to be light and to have a limited cost, and a fast charge but only at the ends of the buses lines. The goal of the presentation is to detail the concept, the fast charge station and the prototypes of buses. Novel Voltage Balancing and Monitoring for a Stack of Electric Double Layer Capacitors Nejat Mahdavi, Michael Kipp, Eric Riedisser, Liebherr-Elektronik; Aly Mashaly, Karl E. Brinkmann, D Nominated for the Best Paper Award Electric double layer capacitors are widely used for storing and providing electrical energy. Due to the high manufacturing tolerances the cells have different capacities, which leads in a multi-cell stack to non-uniform cell voltages and consequently to uneven aging of cells. Therefore, it is necessary to equalize the cell voltages. This paper concerns with the realization of a non-dissipative, low loss balancing circuit for multi-cell stack based on capacitive charge transfer method. A Small Flywheel Energy Storage for Hybrid Cars Jacques Laeuffer, Dtalents, F Nominated for the Best Paper Award A study was conducted to envision an alternative solution to electrochemical batteries for hybrid cars. A mechanical battery is made of a small steel flywheel and an electric machine, to store some few tens of Kjoules only, sufficient for fuel optimization of the hybrid car, and low enough not to face hard gyroscopic issues. Such a device may be mounted into hybrid cars at the conventional physical place of the 12 volts battery, and interfaced by a 3-phase inverter to the electric power bus.
Sensorless Drives Operating performance of Modular Multilevel Converters in drive applications Johannes Kolb, Felix Kammerer, Michael Braun, Karlsruhe Institute of Technology (KIT), D Winner of the Young Engineer Award The Modular Multilevel Converter (MMC) is an upcoming topology for high power drive applications in the medium voltage range. This paper presents the investigation of MMCs used as motor-sided converter as well as grid-sided active-front-end converter. Experimental results from a prototype system show the operating performance of the DC-coupled MMCs at steady state. The dynamic response of the system is tested to verify the cascaded and transformed control scheme of the MMC. Cost-effective implementations of sensorless control strategies Giacomo Scelba, A. Consoli, A. Gaeta, G. Scarcella, University of Catania; A. Cucuccio, D. Costanzo, L. Billè, ST Microelectronics, I Nominated for the Young Engineer Award The main goal of this work is to show how the functionality of a motor drive position estimation technique based on carrier signal injection can be highly improved by adopting novel low-cost microcontrollers to minimize the computation effort and the hardware requirements of the whole control system. A description of the implementation issues and a presentation of some experimental results obtained on a particular HF signal injection sensorless technique are presented.
08. – 10.05.2012, Nürnberg
Initial Rotor Position Detection in Electrically Excited Medium Voltage Synchronous Machines Simon Feuersänger, Jose Mario Pacas, University of Siegen, D In inverter fed, encoderless operation of the synchronous machine the rotor or flux position is mandatory. This information is obtained based on the evaluation of the machine voltages. However, until now the rotor position identification at standstill is only possible if the machine exhibits special characteristics and excludes the identification in most SMs. The present paper introduces a novel approach which works properly in a wide range of SMs.
Poster/Dialogue Session
Power Modules Advanced Neutral-Point-Clamped IGBT module Kosuke Komatsu, S. Okita, Y. Kobayashi, O. Ikawa, T. Fujihira, Fuji Electric, J; Thomas Heinzel, Fuji Electric Europe, D Though many kind of power conversion method were used to the applications, three-level inverter system was also widely used in many application, because of its high-output voltage, or better waveform efficiency as features. On the other hand, three-level inverter system has demerit of many semiconductor switch, and complicated control system/method. In order to solve the problem, Advanced Neutral-Point-Clamped (A-NPC) inverter system was suggested. This paper describes newly developed IGBT module for Un-interrupted Power Supply (UPS)/Solar inverter using A-NPC inverter system. New thyristor mega-module for megawatt-range frequency converters Alexey Grishanin, V. A. Martynenko, A. A. Khapugin, G. M. Varyanova, Electrovipryamitel, RUS; A. Y. Baru, Scientific and Production Enterprise “EOS”, UA This report presents new developed fast thyristor module with voltage 2400 V and mean on-state current 1200 A for inverter applications in power variable-frequency drive. The results of development special semiconductor devices with optimal parameter trade-off for frequency converters on the base of self-excited current source inverters. The presented design has no analogues in the world. A New Generation of 1200V Intelligent Power Module for The High Power Motor Drive Applications Jeong-su Cho, Sungbum Park, Jun-ho Lee, Jun-bae Lee, Dae-woong Chung, LS Power Semitech, ROK This paper presents a new generation of 1200V CIPOS in DIL package of transfer molded type with DBC, which combines with the features of Infineon trench field stop technology IGBT, fast reverse recovery diodes and optimized Infineon coreless transformer gate driver to achieve the excellent solution for up to 6kW motor drives. This paper provides an overall description of electrical characteristics, package structure and thermal performance of the new generation 1200V CIPOS module. 250A/1200V Intelligent phase leg IGBT power modules in the EP3 package for aerospace applications Serge Bontemps, Alain Calmels, Microsemi Power Module Products, F; Jeff Graham, John Neel, Fairchild Controls, USA Microsemi has developed a new series of intelligent phase leg IGBT power modules integrated in the EP3 package in collaboration with Fairchild Controls for aerospace applications. They feature current capabilities up to 250A and are specified for 1200V ratings. They feature Trench IGBTs, SiC diodes, drive and protection functions. The modules are built with AlSiC base plate with and without fins for optimum heat transfer and increased lifetime in severe environments.
08. – 10.05.2012, Nürnberg
Emergency power supply of elevator based on DIPIPM Sun Jian, He Hongtao, Song Gaosheng, Mitsubishi Electric & Electronics (Shanghai); Yu Shufei, Shenyang Brilliant Elevator, CN Emergency power supply (EPS) of elevator is an important equipment to guarantee the safe running, which can drive elevator to safe floor slowly and make elevator and floor at the same level in case of power off during the running of elevator. This paper presents how to design EPS of elevator, Circuit of EPS of elevator, Features of powe modules are introduced, At last, some pictures of prototype and testing waveforms are given. Smart module Series – A new industrial package Standard Olaf Kirsch, Infineon Technologies, D There is a wide variety of different customer requirements visible on the power electronic market. However, some of these requirements are valid for most of all different applications as there is the need for: Mechanical robustness, Flexibility and Adaptability, Modularity, Excellent contact behaviour, Cost optimization. This paper will show details, samples and solutions of how to adress these common requirements within one package family. Latest Small Intelligent Power Module For Energy-Saving Tadanori Yamada, Ryu Araki, Tohru Shirawakawa,, Eiji Mochizuki, Hiroyuki Ota, Fuji Electric, J; Thomas Heinzel, Fuji Electric Europe, D A latest small IPM (Intelligent-Power-Module) for optimizing the energy saving of consumer products was developed. This IPM can realized about 23% of loss reduction was realized at 25% load that is dominant operating mode in APF index as compared with the conventional one. Moreover, the function of thermal sensing and low voltage protection are built in driving IC, so high performance is realized. Thermal Interface - A Key Factor in Improving Lifetime in Power Electronics Martin Schulz, Infineon Technologies, D The paper deals with the often underestimated reduction of lifetime due to the thermal interconnection from power semiconductors and the according heat sink. Tests to evaluate the thermal performance and especially the long-term stability of thermal interface materials are presented and the experimental results are interpreted. The influence of a non-optimized interface to the lifetime expectation is examined in detail based on a material study from the conducted tests.
Warpage of DBC substrates as a function of temperature: A description of systematic and random factors of influence Alexander Legath, Curamik Electronics, D The thermomechanical behavior of DBC substrates is more and more shifting into the center of discussion. During temperature processing, a complex deformation of the substrates is observed. To ensure highest power module quality and reliability it is therefore crucial to understand the mechanisms and the resulting substrate warpage during temperature processes like soldering, sintering and adhesive bonding. Improved heat sink structure by utilizing chimney effect Angel Marinov, Dimitar Bozalakov, Technical University of Varna, BG; Alex van den Bossche, University of Gent, B The paper presents a study of an improved heat sink structure for semiconductor switches with increased heat dissipation capabilities. The study involves a conventional heat sink modified by introducing a small chimney on top of the component that is being cooled. This creates a local air flow due to the chimney effect, where the hot air is sucked upwards, replaced by cooler air from the surrounding environment. Experimental data is presented.
08. – 10.05.2012, Nürnberg
Dual Switch Quasi-Resonant (QR) Flyback Converter Hangseok Choi, Fairchild Semiconductor, USA This paper presents dual switch quasi-resonant (QR) flyback topology. This topology is a cost effective and reliable alternative to the advanced zero voltage switching (ZVS) topologies for energy efficiency regulation. The proposed topology shows average efficiency which is almost equivalent to LLC resonant converters while still allowing easy and simple design of the conventional flyback converters.
Thermal Management Power Loss Measurement using a fast and accurate Open Calorimeter Jens Goettle, Daniel Kübrich, Thomas Dürbaum, University of Erlangen, D The calorimetric method for determination of losses by the use of a temperature rise is applied to a switching cell. By an appropriate characterization of the set-up a very high accuracy in combination with a short measurement time can be obtained. The method has been applied for verification of the predicted losses of a PFC-boost converter. Implementation of a Real-Time Thermal Model for a Multichip IGBT-Module Jussi Karttunen, S. Kallio, P. Silventoinen, Lappeenranta University of Technology, FIN Nominated for the Young Engineer Award This paper presents an accurate and computationally efficient real-time implementation of thermal impedance matrix model for multichip IGBT-modules. The implementation is done in a novel multirate way, which can save significant amounts of computing capacity compared to the traditional approach. The accuracy of the solution is confirmed to be good and a test case implementation for real DSP proves that the proposed method is computationally efficient. Current capability enhancement of busbars or PCBs by thermal conduction Tao Hong, Infineon Technologies, D Generally the current capabilities of busbars or PCBs, which have no active cooling, are calculated according to the heat transport through natural convection and radiations. The thermal analysis in this paper shows, that natural convection and radiation plays just a minor role in many power applications. Optimized layout and thermal design result in concepts, where main part of power dissipation is removed by thermal conduction, which significantly increases current capability. The Importance of Packaging and Second Level Interconnection in Power Electronics Applications Heratch Amirkhani Namagerdi, S. Oknaian, H. Shah, International Rectifier, USA This paper represents the advantages of International Rectifier's DirectFET® package over other packages used in power electronics industry. These advantages, including higher power efficiency, better thermal performance and lower PCB space utilization, are highlighted through specific applications such as a low voltage sync-buck converter, a power tool application and a 3-phase inverter. Ultra compact power module for liquid cooled inverter Thomas Grasshoff, Peter Beckedahl, Ralf Ehler, SEMIKRON International, D A new design approach using a 3 MW water-cooled module for use in wind power converters shows that twice the current density can be achieved compared to a solution based on standard modules. It is based on a tree dimensional water cooling concept which supports an ultra compact design with excellent switching characteristics.
08. – 10.05.2012, Nürnberg
High thermal conductivity technology to realize high power density IGBT modules for electric and hybrid vehicles Shinichiro Adachi, Fumio Nagaune, Hiromichi Gohara, Hiroki Shibata, Takahisa Hitachi, Akira Morozumi, Akira Nishiura Fuji Electric, J; Peter Dietrich, Fuji Electric Europe, D High power density is required for IGBT module used in EV/HEV (electric and hybrid vehicle) inverter system in order to downsize the system size. To meet the demand, we developed new high power density IGBT module applying high thermal conductivity technology.
A Novel SiC Power Module with High Reliability Yuji Iizuka, Yuichiro Hinata, Norihiro Nashida, Masafumi Horio, Yoshinari Ikeda, Fuji Electric, J A novel SiC power module with high reliability is developed. The module has special pin-connected structure as interconnection and special Silicon-Nitride insulated substrate with resin encapsulated structure to take advantages of SiC devices. The results of reliabililty tests show it's high reliability, which indicate that they have big potential as one of the candidates of SiC power module packaging. Power Dissipation Considerations in high Precision Chip Resistors and Networks (high Temperature Applications) Dominique Vignolo, Vishay, F In this paper, we provide design engineers with methods and data which are necessary to tightly control these temperatures and therefore obtain the best performance from thin film resistors, whether supplied as bare die or as SMD chips. The paper provides a thermal model and comparison between various types of PCBs, as well as a comparison of device thermal behaviour depending on the type of substrate or of film technology and how they affect overall performance. We will also note the importance of how components are attached to the board (i.e. by soldering, gluing etc.) and we will present a new approach for de-rating curves. We will show stability figures versus junction temperatures and a long-term storage stability curve
Automotive and Aerospace Applications Contactless Charging System for Electric Vehicles Nikolay Madzharov, Anton T. Tonchev, Gabrovo University of Technology, BG; Darin N. Madzharov, Catholic University of Leuven, B In the last decade almost all leading automobile companies have research and development contributions in the field of electric vehicles. As a result of this, the first effective and economically sound solutions are already in use in city traffic. One of the main widely discussed problems is the charging of electric vehicles with electrical energy. The current paper discusses the development, the practical advantages and the possibilities for applications of contactless charging of electric vehicles. Moreover, the paper presents an exemplary design of a complete charging station. A design of the electric circuit and an analysis of the electromagnetic processes of the converter and the contactless power transmitter have been carried out. A mock-up of the contactless charging station has been developed and practical experiments for varied operating frequencies and air gap between the primary and secondary transformer parts have been conducted. The magnetic core configuration and the turn number of the primary and secondary windings have been optimized. New Transfer-mold Power Module Series for Automotive Power-Train Inverters Mikio Ishihara, T. Nakano, Mitsubishi Electric; K. Hiyama, K. Yamada, MELCO Semiconductor Engineering, J; T. Radke, M. Honsberg, Mitsubishi Electric Europe, D This paper presents a new Transfer-mold Power Module (T-PM) series dedicated for automotive Power-Train inverter and converter applications. Grid-bound charging of an eCar, using the inverter Juergen Rupp, Tilo Moser, Siemens, D Onboard charging system for an electric car, using the inverter as cotrolled rectifier, too. Measures to limit the system perturbation on the low voltage net to meet the grid code.
08. – 10.05.2012, Nürnberg
A Unified inverter//Charger for Plug-In-Hybrid Vehicles Fred Flett, Global Power Electronics & QUANTUM Technologies, USA The unison of inverter and charger is a natural outcome that stems from the evolution of Hybrid electric vehicles in the USA. This paper discusses the advantages of a combined inverter/charger function where the power stage, INFINEON HybridPACK 2, performs the dual function of electric motor propulsion and battery charging. Furthermore the use of customized power semiconductor technology such as Silicon Carbide SBD diodes in core areas of the 3.3kW charger influences the efficiency outcome of the charger function. This dual-use design concludes a reduction in weight and volume due to decrease in component count where the use of shared sensors, centralized signal processing, and packaging is realized. Partial Discharges Identification and Characterization: Design Rules for Aerospace Power Electronic Systems Rodolphe De Maglie, Rainer Buesching, Benjamin Cella, Alfred Engler, Liebherr Electronik, D This paper deals with partial discharges issues in aerospace power electronic system. Indeed, considering the housing, due to the severe environment of the aerospace equipment, a standard solution is to provide a hermetically sealed product. This leads to reliability issue, weight and price increase. Not using a hermetically sealed housing is a promisong alternative that highlights partial discharges issues, especially at high altitude. This paper proposes design rules to avoid these phenomena. Optimized Design Approach for High Power DC/DC-Converters in Aerospace Applications Tim Hilden, Peter Jänker, EADS Deutschland; Lothar Frey, University of Erlangen, D During the design process of a power converter the engineer has to choose various design parameters. A numerical brute-force method is presented using measured and datasheet information to compute a multitude of possible implementations, yielding the required design parameters for a lightweight bidirectional DC/DC-converter. This converter is intended for coupling a battery to an aircraft power bus.
Renewable Energy A hybrid HVDC transmission scheme for grid connection of offshore wind farms Florian Fein, Bernd Orlik, University of Bremen, D Nominated for the Young Engineer Award The paper will present a high voltage direct current (HVDC) based transmission topology for the connection of large offshore wind generation sites to the mainland power grid. After analyzing the requirements of such a hvdc line, a novel hybrid topology will be proposed, that consists of both line- and self-commuted HVDC converter systems. The paper will discuss how the advantages of both systems can be combined and how the disadvantages will be diminished. Influence of the grid impedance on the operating range of n-parallel connected inverters Jan Reese, Friedrich W. Fuchs, University of Kiel, D Parallel operating inverters of distributed energy resssources (DER) are coupled due to the grid impedance. As the grid impedance has an impact on the inverters performance, this influence of this coupling has to be analysed. In this paper, the effects of the grid impedance on the operating range of each inverter is investigated for different grid conditions. The investigation is carried out analytically and is validated though simulation results. Advantages and Benefits of High Voltage POwer Optimizers in Photovoltaic Applications Rosario Attanasio, N. Aiello, F. Gennaro, G. Scuderi, STMicorelectronics, I The objective of the study is to compare the performance of traditional centralized PV plants with series connected and parallel connected distributed plants using power optimizers.For the parallel, distributed architecture the increase in annual energy production is expected to be in the 10% to 20% range.. However, this estimation is still based on assumptions and theoretical considerations, highlighting the need for a complete and extensive real world characterization.
08. – 10.05.2012, Nürnberg
Effects of Shadows on Power and Reliability of PV Plants Nicola Femia, G. Di Capua, University of Salerno, I The effects of shadows on power and reliability of PhotoVoltaic (PV) solar panels are discussed in this paper. The analysis is realized by means of a new model allowing the determination of the P-V characteristic of PV panels at sub-cell level. Such deep level of discretization is required to correctly evaluate the real value and location of the Maximum Power Point of PV plants under mismatched operating conditions and to detect and prevent the potentially destroying effects of small shadows.
Dimming-Based Energy Management of PV-Fed LED Lighting System Nicola Femia, Walter Zamboni, Edoardo Cavallaro, Universiy of Salerno, I A energy-oriented design strategy for a Photovoltaic-fed Light Emitting Diode lighting system including a battery is presented. The main focus is to size the panels and the battery, for a fixed maximum LED load, according to the minimization and balancing of the energy excess produced by the PV source, as well as the energy (missing) non delivered to the load, using a dimming-based energy management technique. DC-DC Power Converter Topology for PEM Fuel Cell Large Stack Operating in Potential Cycling Mode for Embedded Applications Alexandre De Bernardinis, Denis Candusso, Fabien Harel, IFSTTAR; Ibrahima Diaw, ENS Cachan, F The aim of the research is to propose a power converter topology for a PEM Fuel Cell operating in potentiostatic mode and which allows applying the Cyclic Voltammetry technique to a large stack composed of about one hundred cells. It implies to control the fuel cell potential during the cycling profiles, which is not a usual control method for large fuel cell stacks. Bidirectional-buck topology can be a candidate, as well as boost converter for two-source hybrid system for embedded applications. Cell Balancing of a Multi-Cell Battery Storage System for Renewable Energy DC Micro-Grids Helmut Votzi, Hans Ertl, Vienna University of Technology, A The paper analyzes different concepts for active charge balancing for a multi-cell battery energy storage system based on a cascaded multi-level converter topology operated in a phase-shifted PWM manner used as a backbone for a DC micro grid. For active charge balancing of the individual battery cells a P-type control scheme is developed which is extended by a concept where weak cells periodically completely are taken out of operation for specific time intervals. Solar Inverter with Active Current Ripple Compensation Karl Edelmoser,Felix Himmelstoss, Vienna University of Technology, A In the field of electrical solar power conversion the EMC problematic became a more important topic. In common single-phase inverter applications the current of the solar array shows a remarkable ripple. This entails two significant disadvantages: Reduced over all efficiency due to dynamic maximum power point mismatch and reduced lifetime of the panels due to additional component stress. Also the output harmonics of the inverter have to be minimized. Here, a possible solution is presented.
Energy Storage, Smart Grid Modeling of the Li-ion Battery Parameters and State-of-Charge Estimation for Different Driving Conditions Pavol Bauer, Subhadeep Bhattacharya, Delft University of Technology, NL An equivalent circuit model of the Li-ion battery for a wide temperature range has been investigated with. Concurrently, the estimation of state-of-charge of the battery has been done along with the state-of-health (SOH) and State-of-power (SOP) of the battery. Depending on different driving conditions (city and highway driving) these have been evaluated.
08. – 10.05.2012, Nürnberg
Optimum sizing and energy management of hybrid energy storage systems in hybrid electric busses Philipp Nagler, M.-M. Bakran, University of Bayreuth, D Simulation model of hybrid energy storage systems (HESS) for electric vehicles to identify an optimized design with regard to absolute storage size, ratio between different storages and lifetime. Different configurations of the sizing and the energy management are investigated to detect the parameters, which dominate the performance of the energy storage system. An essential optimization aim is to determine the best ratio of supercap energy versus battery energy for a given maximum weight. The peak power corrector for the apartment buildings Nikolay Dyakin, S. Dyakin, S. Volskiy, Transconverter, RUS The problems in the area of electric power industry associated with congestion of power grid are presented. Solution of this problem is application of energy storage. In this article presents a functional configuration of peak power corrector, research and experimental data for apartment building and proposed methods of calculation of electric energy storage. Experimental test-bed for investigation of multi-storage hybrid systems Thilo Bocklisch, Martin Paulitschke, Chemnitz University of Technology, D The paper presents an experimental test-bed for testing of design and control strategies for multi-storage hybrid systems. Main idea is the utilization of storage devices with supplementary operating characteristics. The test-bed is presented in its basic power electronic and control structure, and is explained for the example of a photovoltaic self-consumption systems consisting of short-term battery and long-term hydrogen storage path, and controllable heating cartridge with hot water storage.
Capacitors, Inductors, Transformers Characterization of Equivalent Series Inductance for DC Link Capacitors and Bus Structures Edward Sawyer, M.A. Brubaker, T. A. Hosking, SBE, USA The ESL of the DC link capacitor and associated bus structure connecting to the switch module has important implications for optimization of EV inverters. In many cases, additional snubber capacitors can be eliminated for sufficiently low ESL, thus reducing cost, weight and volume. This paper presents ESL measurements for realistic capacitor/bus structures using a practical method previously documented. Supporting magneto-dynamic finite element analysis results are also presented. How storage capacitor properties will affect the performance of energy harvester systems Tomas Zednicek, AVX Czech Republic, CZ Improvements in semiconductor and other technologies have resulted in the rapid development of energy harvesting systems in the last few years. However susch systems can only deliver low currents due to the high internal impedance of energy harvester power systems. One problem with the efficiency of the power supply is the leakage current performance of the storage capacitor utilised. This paper evaluates the performance of various different of technology capacitors in energy harvester systems. An Accurate Method for Measuring Capacitor ESL Steve Sandler, Picotest.com, USA The equivalent series inductance (ESL) of chip capacitors is becoming an increasingly important parameter as bandwidths and switching frequencies rise in many high-performance systems. The stability and high-frequency dynamic performance of these systems is dependent, in part, on capacitor ESL. For their part, manufacturers of ceramic and tantalum capacitors have been working hard to reduce the ESL of their components. However, system designers cannot simply rely on the capacitor vendors’ published data for ESL, which is limited at best. It’s important that designers be able to make their own ESL measurements.
08. – 10.05.2012, Nürnberg
A new technology for ceramic power capacitors Guenter Engel, Markus Koini, Jürgen Konrad, Michael Schossmann, EPCOS, A A new ceramic capacitor technology is developed, comprising material and device construction. Devices show increasing capacitance with increasing voltage. Multilayer devices were built up and characterized for their frequency behaviour. Due to the compact case size, a very low ESR and extremely low ESL resulted, that potentially improve the switching behaviour of semiconductors and the system efficiency in inverters or DC/DC - equipments. Modeling inductors in frequency domain considering different flux densities for optimized control design in terms of efficiency and stability Dennis Kampen, BLOCK-Transformatoren-Elektronik; Nejila Parspour, University of Stuttgart, D A closer investigation in the modeling of inductors for power electronic systems shows, that for stability, in comparison to the view of inductors in classical control design, an additional damping resistor or active damping methods are less frequently necessary than expected. An example is shown for an active front end control with LCL-Filter and a method for determining equivalent circuits of three phase inductors at different flux densities. Nonlinear Power Inductors for Large Current Crest Factors Alexander Stadler, Tobias Stolzke, Christof Gulden, STS Spezial-Transformatoren-Stockach, D In this paper, a practical method is presented, how to adjust the inductance curve of a nonlinear (saturable) inductor with respect to a desired shape. For these purposes, a nonlinear model was developed based on finite element method (FEM). It is shown how a highly efficient construction with low stray fields and maximum package density can be achieved. Different prototype inductors were realized to illustrate the practical capability for active PFC as well as photovoltaic inverter applications Analytical Calculation of the Current Sharing in Copper Coils with Parallel Windings Anne-Christine Leicht, M. Albach, M. Spang, D. Kuebrich, University of Erlangen, D The assumption of equal current distribution in parallel windings of coils may lead to a wrong loss prediction. An analytical calculation of the current sharing, which is based on both the different hf resistances of the parallel windings and on the magnetic coupling between these windings, is introduced and verified by measurements. Integration of high power planar transformers Koen Hollevoet, Rogers Corporation, B; Danny Ireland, Himag Solutions, UK Planar transformers are used when efficiency, size and or weight is critical. Part of the efficiency and dimensional gains of a planar design get lost in inefficiencies related to the connection between the magnetics component and the circuit. Integration of a high power planar transformer into a laminated busbar eliminates the interconnection and the related issues. It reinforces the values of the planar transformer technology as it enables more efficient and more compact design New Passive Filter For PWM Based Devices Valentin Dzhankhotov, Mikko Pääkkönen, The Switch Drive Systems; Juha Pyrhönen, Lappeenranta University of Technology, FIN New passive filter is presented. It is based on a common foil inductor and called hybrid LC filter (HLCF). HLCF integrates inductance and capacitance in one component. This is achieved with auxiliary foil placed between the turns of the main foil. The stray capacitance in HLCF is canceled and converted into the useful capacitance between main and auxiliary foils. Experimental data in time and frequency domains is presented. Results show very good applicability of the HLCF for real applications.
08. – 10.05.2012, Nürnberg
System Reliability Arbitrary Load Profile Emulator Based on µC Controlled Switchable Resistor Network Christian Oeder, T. John, T. Dürbaum, University of Erlangen, D For the dynamic testing of an industrial DIN rail power supply specification for 240 W (Vo = 24 V, Io = 10 A), a cost-effective µC controlled switchable resistor network for emulating arbitrary load profiles is designed. Special attention is paid towards the hardware set-up of the power as well as the control unit, making precise emulation of complex load curves possible. Furthermore, exemplified load curves are shown and system performance is investigated. Influence measurement of time shifting of IGBT current and voltage signals during switching process Ole Binder, M. Kurrat, Technical University of Braunschweig; J. Meisner, M. Schmidt, Physikalisch-Technische Bundesanstalt, D The determination of the energy loss caused by IGBT switching process can be defective due to different properties of the measurement system. Among the amplitude inaccuracy of the measurement sensors and possible definite properties of the sampling system the time shifting between current and voltage signal can be significant. Especially fast switching operations with a total time of below 1 µs and high di/dt's and du/dt's can contribute a relevant deviation of the measured energy loss. Impedance Characterization of Gate Drive Circuits for Silicon-Carbide Field-Effect Transistors Michael Meisser, Karsten Hähre, Karlsruhe Institute of Technology, D This work focuses on small-signal impedance spectra measurements of gate drive circuits for power semiconductor switches in order to identify parasitic circuit components and corresponding resonances. Knowing the involved parasitics, the drivers could be optimized in order not to show resonance. Two gate drive circuits for Silicon Carbide MOSFETs and normally-on JFETs were characterized by their impedance spectra. Fault Tolerant Electric Power Steering System with Multi-Functional Converter Drive Using Two-Phase Operation Thomas Hackner, Johannes Pforr, UAS Ingolstadt, D A novel two-phase operation of a three-phase induction machine with multi-functional converter is proposed to increase the reliability of an automotive electric power steering system. The two-phase operation allows an operation of the drive even with a complete loss of one inverter leg or motor phase. An analysis has been performed to show the influence of the two-phase operation to the motor performance and the requirements for the automotive power net. New design and evaluation of a fully integrated PCB dual-switch fuse - Energetic materials assisted. Application for new fail-safe converters Zhifeng Dou, Frederic Richardeau, Emmanuel Sarraute, Vincent Bley, Jean-Marc Blaquiere University of Toulouse; Claire Vella, Gilles Gonthier, SAFRAN, F In this proposition, a generic and passive dual-switch fuse is designed to symmetrically disconnect a switching cell against a leg short circuit failure. A new compact FR4 Copper - PCB structure is proposed combining a dual-fuse mode and a passive dual-switch mode owing to the integration of an energetic material embedded in the thickness of the assembly. Finally, a dual-switch fuse prototype is fully integrated and validated at DC350V - AC15A operation in a voltage source inverter. Reliability of Power Semiconductor Modules Combining Active and Passive Temperature Cycling Jens Goehre, Stefan Schmitz, Martin Schneider-Ramelow, Klaus-Dieter Lang, Fraunhofer IZM, D In this paper results from active and passive cycling are compared with life-time investigations using a newly developed testing method which combines active power cycling with passive temperature cycling in a single test.
08. – 10.05.2012, Nürnberg
Laboratory Setup for Power Cycling of IGBT Modules with Monitoring of ON-State Voltage and Thermal Resistance for State of Aging Detection Matthias Böttcher, Marco Paulsen, Friedrich W. Fuchs, University of Kiel, D This paper presents a laboratory power cycling setup for accelerated aging of chip and wire IGBT modules. ON-state voltage and thermal resistance between junction and heat sink are monitored in order to detect variations of their values in case of solder fatigue and bond wire liftoff. Power cycling tests are applied to a 600 V / 20 A IGBT module. Experimental results from healthy condition up to occurence of bond wire liftoff are provided and analyzed. Power modules combined failure factors effects in automotive applications Souad Bachti, L. Dupont, G. Cocquery, S. Lefebvre, IFSTTAR; S. Loudot, Renault, F The robustness study of a module on the basis of a representative drive cycle is mandatory for safety reasons, cost and lifetime estimation. The power modules for motor drives are subject to multiple failure modes which are due to many damaging factors. The objective of this paper is to define an electro-thermal "peril factor" that allows discriminating the criticity of a specific mission profile in order to lessen the impact on lifetime. Active Self-Calibration of Samples According Vce(T)-Method in Advance of Power Cycling Tests Marco Bohlländer, Sebastian Hiller, Chemnitz University of Technology, D The paper presents a new method to calibrate power electronic devices according to the common Vce(T) method in advance of a power cycling test. An active self-calibration method is described where the semiconductor device is heated up actively by its own power losses instead of an external heat source. The calibration is done while the devices are already placed in the tester. This new method reveals significant advantages in accuracy and effort.
Sensors A Precise and Robust Three Phase Current Sensor Module with a Special Digital Modulated Interface Abdoulkarim Bouabana, Constantinos Sourkounis, Ruhr University Bochum, D Current sensors have an important part in the technical world. A special part is by photovoltaic. The efficiency of the system can only increase by means of the MPP-Tracking with high precise current sensor. Furthermore, the inverter with the three phases should measure balance or unbalance effects. In this case, this paper will present a novel system (AC-DI module). This module has four high precise single current sensors, which are based on the measuring module (IHM-A-1500 Split Core Closed Loop Hall Effect Current Sensors and Applications Yixiao Wang, Ji-Gou Liu, Jing Zhao
, Yongcai Yang, ChenYang Technologies, D
Resolver Based Position Sensing in Automotive Applications Bernhard Frenzel, Peter Kurzweil, UAS Amberg; Nejila Parspour, University of Stuttgart, D In drive applications with field oriented current control the position of the magnetic flux orientation is frequently measured with resolvers and ready-made resolver-to-digital converters. In this paper a reliable, small sized and low cost alternative with high dynamics was shown with the utilization of AD converters already available in most today's electric machine inverters. Two different resolver excitation circuits were presented, together with simulation and measurement results.
08. – 10.05.2012, Nürnberg
Two wire position signal conversion for Brushless DC motors Angel Marinov, Emilian Bekov, Technical University of Varna, BG; Alex van den Bossche, University of Gent, B The paper presents a two wire position signal converter for sensored BLDC motors. The suggested topology aims at reducing the number of lines necessary for connecting the sensors of a BLDC machine to the control circuitry. The designed topology keeps a simple and reliable structure. A current based conversion is used, which utilizes the sensor's power supply connection. The presented structure is analyzed and experimental results are presented. Parameter Optimization of Hall Effect Gear Tooth Speed Sensors Junwen Lu, Ji-Gou Liu, Zhe Zheng; ChenYang Technologies, D; Yunfei Mai, University of Shanghai for Science and Technology, CN In this paper relevant parameters of Hall Effect gear tooth sensors , such as sensing distance, duty cycle and phase drift are optimized by magnetic field analysis and experiments and by using proposed mathematical models. The optimization results are applied to the performance improvement of different Hall Effect gear tooth sensors. Experiment results show that the optimized sensors have better performances for applications to rotational speed measurements. PVDF based rain sensor for weather assessment relevant to renewable energy sources Emilian Bekov, Angel Marinov, Vencislav Valchev, Technical University of Varna, BG The paper presents a concept and study of piezoelectric sensor for rain, based on PVDF material. The sensor can register rain and with reasonable accuracy measure its intensity and volume per square meter. Due to its small geometrical size and mass and low power consumption the suggested sensor. It is suitable for remote weather measurements relevant renewable energy sources. It is intended for applications in PV solar tracking systems. The paper presents experimental study and verification.
Special Session “E-Mobility – Battery Chargers” Advantages and Challenges of Contact less Charger Rainer Knorr, Siemens, D Plug in Hybrids and Electric Vehicles need to be recharged after using. Currently this will be done via chargers with cables. The contact less charging offers more comfort. However contact less charging also does have some challenges. The presentation will show these advantages and the challenges of the contact less charging with the special focus on the air gap were the energy will be transferred. A general overview of the need of the charging infrastructure and its integration in the smart grids. Michael Tiegelkamp, Siemens, D The number of e-vehicles will rise fast in the next years. Every vehicle needs power from the gird and has an energy storage system of several kilowatt hours. However the range of Plug in Hybrids and Electric Vehicles are limited to 50 until 150 km. Therefore they needed to be recharged frequently to cover longer distances and to keep it flexible for the usage of the customer. The presentation will show the set up and the integration of charging stations into the grid.
08. – 10.05.2012, Nürnberg
DC Charging of Electric Vehicles – The Combined (Combo) Charging System as Universal Solution Robert Weber, BMW, D DC charging is considered to be an essential completion to AC charging for comprehensive use of electric vehicles enabling quick range extension and long haul routes. It represents an important base for future intense penetration of electromobility as it constitutes an optimum economic solution. German and US-American car manufacturers have developed the combined (combo) charging system for both AC and DC charging as a joint approach. Batteries and SMART Batterymanagement Martin März, Fraunhofer-IISB, D
High Power Converters Potential of Two-Level and Three-Level Inverter Techniques for Medium Power Inverter Applications Marc-André Ocklenburg, Siemens, D This paper shows how to calculate the maximal achievable switching frequency of two-level and three-level inverter single phase modules for typical medium power inverter applications in connection to chip temperatures, dead times and total losses. The result is a discussion which topology to use for each application. Soft Switching Characterization of a 6.5kV IGBT for High Power LLC Resonant DC-DC Converter Drazen Dujic, Gina Steinke, E. Bianda, F. Canales, ABB Corporate Research; S. Lewdeni-Schmid, C. Zhao, J. Steinke, ABB Power Electronics, CH Nominated for the Young Engineer Award Medium voltage (MV) high power applications are usually realized using high voltage semiconductors (3.3kV and above) operated with low switching frequencies (several hundred Hz) and hard switching. For high power DC-DC converters employing transformer for galvanic isolation, it is attractive to increase switching frequency in order to reduce transformer size. In this paper, soft switching properties of a 6.5kV IGBT within a DC-DC LLC resonant converter are presented. The Hybrid Multilevel Converter: A new Voltage Source Converter Topology for improved Efficiency Ralph Niederer, Vivatec, CH Nominated for the Best Paper Award This paper presents a new topology for multilevel voltage source converters. This topology is a hybrid circuit which combines the switching capabilities of active power switches (like IGBTs or IGCTs) with the low loss and high voltage ratings of thyristors. With this topology conducting losses of the semiconductors are reduced and maximum converter efficiency is achieved. Exemplary loss calculations are presented for a low voltage solar converter and a medium voltage wind turbine converter.
Modular Multilevel Shunt Reactive Compensator: a viable solution for flicker mitigation Gianluca Postiglione, G. Borghetti, G. Torre, A. Piccoli, M. Perna, F. Punghellini, Ansaldo Sistemi Industriali, I To provide high power quality and better efficiency in transmission and distribution system, Reactive Shunt Compensator, including voltage regulation, power factor/harmonic compensation, and flicker mitigation, is an indispensably necessary task.
08. – 10.05.2012, Nürnberg
Modular Multilevel Converters with Reverse-Conducting IGBT Hans-Guenter Eckel, Daniel Wigger, University of Rostock, D The modular multilevel converter (MMC) is a relatively new inverter topology, which has be-come very popular for self commutated HVDC converters, SVC and line side MV inverters. One drawback of this topology is the unequal loss distribution between the power semi-conductors. This papers presents, how this disadvantage can be overcome by using re-verse conducting IGBT (RC-IGBT). Calculation results for output power and efficiency are presented and some drive aspects are discussed. New Materials for Power Electronics Novel silver contact material for applications on DCB Yvonne Löwer, Heraeus Materials Singapore, SGP; Thomas Krebs, Susanne Duch, Sebastian Fritzsche, Wolfgang Schmitt; Heraeus Materials Technology, D Power semiconductor devices are used for controlling and converting electrical energy and are used today in a wide range of applications. The constantly growing demand of higher performance, lower cost and higher reliability raises the need for further material development. The challenge of increasing power density is addressed by the development of novel interconnect materials, the mAgic sinter glue and paste. These materials offer efficient heat transfer as well as high temperature stability. Optimizing Thermal Interface Material for the Specific Needs of Power Electronics Scott T. Allen, Henkel, USA; Martin Schulz, Infineon Technologies; Wilhelm Pohl, Hala Contec, D Development and formulation of a pre-applied phase change compound for Infineon IGBT power modules suitable for use in harsh environments Silicon Nitride Substrates for Power Electronics Manfred Goetz, Nico Kuhn, Bernd Lehmeyer, Andreas Meyer, Curamik Electronics, D The increasing demand for power density, higher chip temperature and longer lifetime cycles of power electronics systems will require new substrate technologies and materials. State of the art power electronics modules based on alumina and aluminum nitride ceramic will reach its limits on recent new applications like HEV/EV or offshore wind turbines soon, thus require new insulating materials and substrate technologies such as silicon nitride based substrates. A new concept for a bimetal Al-Cu clad IGBT base plate for automotive applications Andre Uhlemann, Alexander Herbrandt, Infineon Technologies, D Power electronic applications for hybrid as well as for electric vehicles often based on liquid water cooling system in order to optimize the power density and keep the system compact. In this paper, we present a new concept for an IGBT cooling plate, based on a new Aluminum-copper clad substrate with copper on the top for soldering and a structured lower side for cooling. New Generation of Silicone Gels for Power Devices Encapsulation Eric Vanlathem, Dow Corning, B; Hiroji Enami, Dow Corning Toray, J; D.S. Hyun, Dow Corning Corporation, USA Advances in Silicon technology for IGBT chips and recent progress made in the field of Wide Band Gap Semiconductors, principally SiC, are pushing temperature limits for packaging materials to the extreme of what existing materials can afford. A set of new silicone gels has been developed and evaluated following a three steps approach: with step one, optimization of existing toolbox of silicone chemistry brings silicone gels capable to withstand 200°C with step two, a new approach was necessary in order to boost thermal performances, up to a temperature of 225°C with step three targeting temperatures at or above 250°C, an out-of-the-box concept is being followed, with new silicon-based polymers being designed.
08. – 10.05.2012, Nürnberg
Control Techniques in Intelligent Motion Systems Parameter Sensitivity of Extended Adaptive Observer for the Encoderless Identification of Two Mass-Systems Henning Zoubek, Jose Mario Pacas, University of Siegen, D The present paper addresses the topic of mechanical system identification in speed-sensorless operated two-mass-systems. A novel extended speed adaptive observer structure that takes the mechanical characteristics into consideration serves for the induction motor speed estimation. Based on this information the encoderless control as well as the identification of the setup by frequency response measurement is achieved. Parameter variations of the observer model with respect to the identification Optimization of the passive components of the Modular Multilevel Matrix Converter for Drive Applications Felix Kammerer, Johannes Kolb, Michael Braun, Karlsruher Institut für Technologie (KIT), D Nominated for the Young Engineer Award The Modular Multilevel Matrix Converter (M3C) is a new topology which extends the Modular Multilevel Converter (M2C) family for medium voltage high power low speed drive applications. The energy pulsation and therefore the amount of installed capacitance is very important for the construction of such a converter. This paper presents a method to estimate the required amount of capacitance for a given application. Additionally control methods are presented to reduce the energy pulsation. Dynamic behaviour and efficiency of multimotor drives for electric vehicles using MHF Converters Martin Schulz, Lukas Lambertz, Anna Mayer, Rainer Marquardt, University of the Federal Armed Forces Munich, D For future electric vehicles, multimotor systems will get increased importance. Conventional power electronic topologies are not well adoptable to these requirements. In this paper, the new Modular High Frequency (MHF) Converter is investigated, which fulfils additional requirements like low weight, high efficiency and excellent dynamic behaviour. This Paper shows possible applications of the MHF in different multimotor systems, the resulting dynamic behaviour and the achievable efficiency.
A Strategy for Suppressing Residual Vibrations in Motion Control Loay Alkafafi, Carsten Hamm, Siemens; Tomas Sauer, Justus-Liebig-Universit yGießen, D This paper introduces a novel approach to suppress the residual vibrations of multi-axis machine tools moving along given contours. The method uses the concept of time scaling to eliminate the axes residual vibration while keeping the original contour unaffected. Results from simulation and experiments show that the residual vibration can be reduced to any practical relevant limit. Advanced Models for Non-linear Multi-variable Model-based Control Carsten Hamm, Siemens, D The article presents recent results in adaptive machine tool control. LPV systems are used to obtain models for nonlinear mechanical structures. The LPV approach seperates the nonlinear structural parameters from the locally linear system dynamics. The article presents how to develop adaptive control schemes for high speed machine tools with nonlinear dynamics in order to achieve good performance in the full range of the operation area. Practical applications from actual machine tools are shown.
New Wide Bandgap Devices Depletion-mode SiC VJFET Simplifies High Voltage SMPS Nigel Springett, Robin Schrader, Jeff Casady, Semisouth Laboratories, USA The depletion mode jfet can be used in a cascode to supply the start -up voltage fo rthe controller and then as the major switching element, this simplifies the circuit, gives constant start-up time and reduces losses.
08. – 10.05.2012, Nürnberg
1200 V, 450 A Power Module with 36 mm2 of SiC VJFET Area Kevin M. Speer, Robin Schrader, David C. Sheridan, Jeffrey B. Casady, SemiSouth Laboratories; Jim Gafford, Chris Parker, Michael S. Mazzola, Mississippi State University, USA A half-bridge power module has been assembled that uses 36 mm2 of 1200 V depletion-mode SiC vertical-trench JFETs in each switch position. The module's peak saturation current and on-state resistance at room temperature are 450 A and 10 m&Omega. At a load current of 100 A, total switching losses are 1.23 mJ. Compared to a similarly rated silicon IGBT module, this represents more than a 90% reduction in switching losses. SemiSouth Laboratories is changing the way electrical power is processed through breakthrough silicon carbide (SiC) technology. Leveraging over a decade of research, power conversion applications can now benefit from dramatic improvements, as well as enhanced switching and thermal performance. SemiSouth products are ideal for a variety of power electronics applications such as solar and wind inverters, telecom rectifiers, high-efficiency power supplies, and hybrid-electric drives. 1,7kV Hybrid SiC Power Module With large Current Capacity and Low Power Loss Shigeru Hasegawa, Kazuhiro Morishita, Shinichi Iura, Kazuhiro Kurachi, Isao Umezaki, Hiroshi Yamaguchi, Yoshinori Matsuno, Tatsuo Harada, Hiroshi Watanabe, Yasushi Nakayama, Takayoshi Miki, Mitsutaka Iwasaki, Takeshi Oi, Tatsuo Oomori, Hiroaki Sumitani, Mitsubishi Electric; Yukimasa Hayashida, Melco Semiconductor Engineering , J; Eugen Stumpf, Mitsubishi Electric Europe, D In HVIGBT so far classical Si- based technology has been employed like IGBT and FwDi, while SiC based technology has been a subject for small power power conversion only. This new approach implements a SiC FwDi paired with a Si IGBT in a HV IGBT standard package and this paper presents the results of this hybrid construction. A Class D Audio Amplifier as an Application for Silicon Carbide Switches Verena Grifone Fuchs, C. Wegner, S. Neuser, M. Schröder, D. Ehrhardt, University of Siegen, D A class D amplifier operates in switch-mode and is driven by a PWM of the audio input. Timing and amplitude errors of the PWM have to be minimised, since any errors introduced result in noise and distortion (THD) on the output signal. Two almost identical prototypes of a class D amplifier have been developed. Operating at a switching frequency of 400kHz, the turn-on behaviour of a CoolMOS and a SiC-mosfet is compared. The benefit of using SiC devices in the power stage is discussed and examined.
Wire Bonds in Power Modules A measure on the effect of aluminum reconstruction and bond wire lift off in power semiconductor modules Tien Anh Nguyen, P.-Y. Joubert, S. Lefebvre, G. Chaplier, SATIE ; Serge Bontemps, Microsemi PMP, F The paper reports on the estimation of the distribution of DC currents flowing in the metallization layer in correlation to the local degradation of the aluminum sheet resistance and to the bond wire lift-off. The degradation of the local aluminum resistance is evaluated by means of an eddy current sensor. The local distribution of the current in the metallization layer is obtained by inverting a mesh-free modeling of the magnetic field induced. Large Cu Wire Wedge Bonding on Wafers with Cu Pad Metallization Jamin Ling, Tao Xu, Christoph Luechinger, Kulicke & Soffa Industries, USA; Petra Backus, Oliver Worm, Atotech Deutschland, D Large Cu wire bonding on Cu die metallization is attractive for the power product reliability improvements, but, is challenged with cratering its fragile underlayer and structures. Ni-based bond pad with higher stiffness has been used to support the brittle structure during high bonding force applications. The bonding parameter optimization could further minimize the damages. A Cu specific bond head is developed to demonstrate the success of bonding on Cu pad structure on wafers.
08. – 10.05.2012, Nürnberg
Al-Cladded Cu Wire Bonds Multiply Power Cycling Lifetime of Advances Power Modules Uwe Scheuermann, R. Schmidt, SEMIKRON Elektronik; E. Milke, Heraeus Materials Technology, D Nominated for the Best Paper Award Advanced interconnection technologies as Ag diffusion sintering eliminates the impact of solder fatigue. The replacement of Al wire bonds by Cu wire bond requires the transit from Al surface metallization to Cu contacts, which implies considerable challenges to the chip technology. Implementing Cu wires with a cladding of Al is compatible with standard chip technology and allows multiplying the reliability of power modules without the need for Cu contacts on chips. Novel Cu-bond contacts on sintered metal buffer for power module with extended capabilities Jacek Rudzki, Frank Osterwald, Danfoss Silicon Power; Martin Becker, Ronald Eisele, UAS Kiel, D Achieving the utmost reliability of power semiconductors is an ongoing challenge for the scientists and engineers in the packaging community of the industry und research institutions. Still the semiconductor could live longer when only the bonding and joining technologies would be more stable against power and temperature cycling wearout. More current density is also the major chalange in the power electronics.
High Power Devices 3.3kV High Speed IGBT Module For Bi-directional and Medium Frequency Application Masashi Shinagawa, Takashi Waga, Yoshiaki Toyota, Yasushi Toyoda, Katusaki Saito, Hitachi Europe, UK Nominated for the Young Engineer Award 3.3kV high speed IGBT module was developed. Optimized lifetime control realized drastically decreasing of both of turn off loss and recovery loss. This high speed characteristic is suite for bi-directional and high frequency application such as resonant DC-DC converter. Recovery behavior at resonant DC-DC converter modeld cuircuit is demonstrated. Obviously, this new designed diode shows low loss and therefore better adaptability for bi-directional and medium to high frequency appllications.
StakPak IGBT Press-packs for the industrial market Franc Dugal, Evgeny Tsyplakov, Liutauras Storasta and Thomas Clausen, ABB Switzerland, CH ABB Semiconductors is presenting the latest product and technology platform for 4.5 kV press-pack IGBT, named by ABB as the StakPak. The StakPak is ideally suited for high power industrial power converters and is optimized for this application by employing the ABB SPT+ chip platform together with properitary packaging platforms. Short-Circuit Behaviour of High-Voltage IGBTs in Circuits with di/dt Snubbers Thomas Basler, Josef Lutz, Chemnitz University of Technology; T. Brückner, R. Jakob, P. Sadowski, G. Junge, Converteam, D Nominated for the Young Engineer Award When dic/dt snubbers are used, a higher short-circuit turn-on inductance leads to significantly different short-circuit behaviours under short-circuit type one (SC 1) and two (SC 2). Due to a strong reduction of the collector-emitter voltage the SC 1 behaviour can become critical for the IGBT and a desaturation process with steep Vce gradients can be the consequence. This paper describes the IGBT behaviour under this failure mode and shows options of a fast detection. 1700V Reverse-Blocking IGBTs with V-Groove Isolation Layer for Multi-Level Power Converters David H. Lu, Masaaki Ogino, Tohru Shirakawa, Haruo Nakazawa, Yoshikazu Takahashi, Fuji Electric, J 1700V reverse-blocking IGBTs(RB-IGBTs) are developed for the first time as bidirectional switches in multilevel converter applications. In this work, our hybrid isolation process by combining thermal diffusion and V-Groove etching is further developed to form 1700V device. Sufficient blocking capability and switching robustness have been successfully demonstrated. At the same switching loss level, on-state voltage drop of 50A-rated planar gate RB-IGBT is reduced approximately 2.0V compared with that of serially connected trench-gate IGBT and FWD. Experimental benchmarking on 1200A module demonstrated that the energy loss in three-level inverter was reduced 22% by using RB-IGBTs instead of IGBT and FWD pairs
08. – 10.05.2012, Nürnberg
Special Session "FPGAs in Intelligent Motion II” High Fidelity Hybrid Hardware-in-the-Loop Simulator with FPGA and Processor for AC Locomotive Drives
Meng Sun, Joachim Böcker, Zhiyu Cao, University of Paderborn, D; Laisheng Tong, Huanqing Zou, CSR Zhuzhou Electric Locomotive, CN In this paper, a high fidelity hybrid real time hardware-in-the-loop (HiL) simulator using FPGA and real time processor is introduced and its application on a high power AC locomotive traction system composed of power electronic converters and induction motors is reported. Experimental results show that by distributing the computation load on FPGA and processor optimally, a high fidelity reconstruction of real plant dynamic behavior can be achieved with minimized FPGA resource consumption and good test flexibi Boosting Dynamics of ac Machines by using FPGA based Controls Oleg Buchholz, Joachim Böcker, University of Paderborn, D; Shashidhar Mathapati, Delta Energy Systems, D The digital control of ac machines is known to have a limited control bandwidth. Within this paper the focus is put on the state of the art processor based control with a calculation of the achievable control bandwidth as a function of the chosen design parameters (e.g. sampling rate/ strategy). On the basis of the results the FPGA based control is introduced to show how the bandwidth increases, even if the switching frequency is kept constant. Efficient Space Vector PWM Scheme for Multi-Level Inverters Markus Höltgen, Jens Onno Krah, UAS Cologne ; Ingo Staudt, SEMIKRON Elektronik, D The paper proposes a very efficient method for the implementation of multi-level space vector PWM. The objective of the proposed scheme is to reduce the necessary processing requirements without any drawback. The Multi-level switching sequence with minimal switching frequency and optimal control of the divided dc-link voltages is generated automatically. Experimental results are shown with an FPGA controlled 5-level inverter built from two IGBT based 30 kW 3-level inverters. A Novel and Flexible Test Stand for Medium Voltage Drives Using a Hardware-in-loop (HIL) Simulator Weihua Wang, Jean Bélanger, Christian Dufour, Opal-RT Technologies, CDN ; Ata Douzdouzani, ABB Switzerland, CH This paper presents the novel solver and the system architecture used by the HIL-simulation-based test stand for medium voltage drives. Test results of the ACS 6000 drives are shown under various conditions, and compared with the measurement acquired from the field testing.
