2015 C2 1 2 4 6 8 10 14 16 16 17 18 20 目次 CONTENTS TOKYO ELECTRON As of March 31, 2015 FACT BOOK Tokyo Electron (TEL) Overview 東京エレクトロン（TEL）の事業概要 Global TEL TELの世界展開 Industry Data インダストリー・データ Semiconductor & TFT-LCD Manufacturing Process Flow 半導体製造工程及び TFT-LCD製造工程 Consolidated Operating Results 連結業績 Semiconductor Production Equipment (SPE) and FPD/PV Production Equipment 半導体製造装置・FPD/PV製造装置 Consolidated Financial Data 連結財務データ Consolidated Balance Sheets 連結貸借対照表 Consolidated Statements of Operations 連結損益計算書 Consolidated Statements of Comprehensive Income 連結包括利益計算書 Consolidated Statements of Cash Flows 連結キャッシュ・フロー計算書 Consolidated Quarterly Data 連結四半期データ Stock Information 株式情報
Transcript
2015
TOKYO ELECTRON LIMITED
World Headquarters
Akasaka Biz Tower 3-1, Akasaka 5-chomeMinato-ku, Tokyo 107-6325, JapanTel: +81-3-5561-7000URL: http://www.tel.com
C2
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目次CONTENTS
TOKYO ELECTRON
As o f March 31 , 2015
FACTBOOK
PR53-134
PR00-000
Printed in Japan
本誌は再生紙を使用しています。Printed on recycled paper.
Tokyo Electron (TEL) Overview東京エレクトロン（TEL）の事業概要
Global TELTELの世界展開
Industry Data インダストリー・データ
Semiconductor & TFT-LCD Manufacturing Process Flow
半導体製造工程及びTFT-LCD製造工程
Consolidated Operating Results連結業績
Semiconductor Production Equipment (SPE) and
FPD/PV Production Equipment半導体製造装置・FPD/PV製造装置
Consolidated Financial Data連結財務データ
Consolidated Balance Sheets連結貸借対照表
Consolidated Statements of Operations連結損益計算書
Consolidated Statements of Comprehensive Income
連結包括利益計算書
Consolidated Statements of Cash Flows連結キャッシュ・フロー計算書
Consolidated Quarterly Data連結四半期データ
Stock Information株式情報
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FPD Production EquipmentFPD （フラットパネルディスプレイ） 製造装置
FPD: Flat Panel Display
■ Corporate Information 会社概要
Tokyo Electron (TELTM) Overview 東京エレクトロン（TELTM）の事業概要
■ Composition of Net Sales by Division 部門別売上構成比
Fiscal year ended March 31, 20152015年3月期
Corporate Name Tokyo Electron Limited商号 東京エレクトロン株式会社 World Headquarters Akasaka Biz Tower, 3-1 Akasaka 5-chome,本社所在地 Minato-ku, Tokyo, Japan 東京都港区赤坂5-3-1 赤坂Bizタワー Established November 11, 1963 設立 1963年11月11日 Capital ¥54.9 Billion (as of March 31, 2015) 資本金 549億円（2015年3月31日現在）
Major Products and Services主要取扱製品
Semiconductor Production Equipment (SPE)半導体製造装置
• Others その他
�• Coater/Developer コータ/デベロッパ
�• Plasma Etch System プラズマエッチング装置
• Thermal Processing System 熱処理成膜装置
• Single Wafer Deposition System 枚葉成膜装置
• Cleaning System 洗浄装置
• Wafer Prober ウェーハプローバ
• FPD Coater/Developer FPDコータ/デベロッパ
• FPD Plasma Etch/Ash System FPDプラズマエッチング/アッシング装置
Semiconductor Production Equipment 半導体製造装置94.0％
Othersその他0.1％
PV ProductionEquipment *PV製造装置0.6％
FPD ProductionEquipmentFPD製造装置5.3％
* Tokyo Electron ended all research and development, manufacturing and sales operations in the PV production equipment business as of the end of March 2014, but will continue support operations for delivered units.
Japan 日本 5,041 6,922 6,548 7,820 7,166 U.S.A. 米国 192 1,315 1,205 1,017 1,622 Europe 欧州 51 378 425 310 644 Asia アジア 126 331 686 921 1,412 Total 合計 5,410 8,946 8,864 10,068 10,844
Japan 日本 U.S.A. 米国 Europe 欧州 Asia アジア
0
4,000
8,000
12,000
16,000
20151995 2000 2005 201020140
250,000
500,000
750,000
1,000,000
201320122008 2009 20102005 2006 2007 2011
Japan 日本 U.S.A. 米国 Europe 欧州 Asia アジア
2015
U.S.A. 米国 Europe 欧州 Asia アジアJapan 国内
• Tokyo Electron Yamanashi Ltd. 東京エレクトロン山梨㈱• Tokyo Electron Kyushu Ltd. 東京エレクトロン九州㈱• Tokyo Electron Tohoku Ltd. 東京エレクトロン東北㈱• Tokyo Electron Miyagi Ltd. 東京エレクトロン宮城㈱• Tokyo Electron TS Ltd. 東京エレクトロンTS㈱• Tokyo Electron FE Ltd. 東京エレクトロンFE㈱• Tokyo Electron BP Ltd. 東京エレクトロンBP㈱• Tokyo Electron Agency Ltd. 東京エレクトロン エージェンシー㈱
• Tokyo Electron U.S. Holdings, Inc.
• Tokyo Electron America, Inc.
• TEL Technology Center, America, LLC
• TEL Venture Capital, Inc.
• TEL Epion Inc.
• TEL NEXX, Inc.
• TEL FSI, Inc.
• Tokyo Electron Europe Ltd.
• Tokyo Electron Israel Ltd.
• TEL Magnetic Solutions Ltd.
• TEL Solar AG
• Tokyo Electron Korea Ltd.
• Tokyo Electron Taiwan Ltd.
• Tokyo Electron (Shanghai) Ltd.
• Tokyo Electron (Kunshan) Ltd.
• Tokyo Electron Singapore Pte. Ltd.
Tokyo Electron Ltd.東京エレクトロン（株）
■ Tokyo Electron and its Consolidated Subsidiaries 東京エレクトロンと連結子会社As of March 31, 2015（2015年3月31日現在）
Number of consolidated subsidiaries : Total of 46 including the 24 below連結子会社数：下記24社含め計46社
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2
Applied Materials
ASML
Tokyo Electron
Lam Research
KLA-Tencor
SCREEN Holdings
Advantest
Teradyne
Hitachi High-Technologies
Nikon
アプライド マテリアルズ
エーエスエムエル
東京エレクトロン
ラムリサーチ
ケーエルエー・テンコール
SCREENホールディングス
アドバンテスト
テラダイン
日立ハイテクノロジーズ
ニコン
1.19
0.89
7.94
7.55
4.86
2.87
5.54
1.52
1.44
1.30
Industry Data インダストリー・データ
Source 出典：VLSI Research (April 2015)
■ World Top 10 SPE Makers 半導体製造装置メーカー世界トップ10
(US$ Billion 十億ドル)
CY2014 Revenue Ranking2014年売上高ランキング
Source 出典： *1 IHS, Application Market Forecast Tool Q1 2015 *2 WSTS, 29 Years WSTS Blue Book Data *3 SEAJ
4 Semiconductor & TFT-LCD Manufacturing Process Flow 半導体製造工程及びTFT-LCD製造工程
The fabrication processes (wafer processing and TFT array process) essential for manufacturing semiconductors and TFT-LCDs are similar.半導体やTFT-LCD製造の要となる前工程（ウェーハ処理プロセス、TFTアレイプロセス）は、ともによく似た工程です。
Semiconductor manufacturing process 半導体製造プロセス
Interconnect formation 配線形成
Cross section 断面図
Wafer testウェーハ検査
Wafer processing ウェーハ処理プロセス
TFT array processing TFTアレイプロセス
ゲート電極層上にパターン形成プロセスを施し、ソース・ドレイン領域をつくる。
Source and drain areas are made by applying patterning processes to the gate electrode layer.
An ion implanter dopes the source and drain areas with impurities, such as boron and arsenic. Ox films prevent dopant ions from being implanted in other areas. Subsequent annealing diffuses these impurities to a more uniform density.
酸化膜をCVD法で堆積させ層間絶縁膜を形成し、表面を研磨して平坦にする。
Intermetal dielectric film is formed by oxide using CVD method and the film surface is planarized by polishing system subsequently.
絶縁膜上にパターン形成プロセスを施し、コンタクトホールを開口する。
Contact holes are opened by applying patterning processes to the dielectric film surface.
CVD法で金属膜を埋め込む。余分な膜は研磨で除去する。
The holes are filled with metal film by CVD, then excess metal is removed by polishing.
低誘電率膜等の層間絶縁膜を堆積する。次にパターン形成を行い配線となる部分（トレンチ）を開口する。
Low-dielectric-constant film is deposited followed by trench formation in the film by patterning process.
トレンチに金属膜を埋め込み余分な膜を研磨し除去する。
Metal films are filled into the trench and excess metals are polished.
層間絶縁膜堆積～金属膜埋め込み/研磨の一連のプロセスを必要な配線層数分繰り返す。
Processes from dielectricfilm formation to metalpolishing are repeated tomake a multi level inter-connect.
There are several hundreds of identical LSI chips on a fabricated wafer. Prober makes pins contact chips, and tests whether chips are good or bad electrically by exchanging signals.
Wafers are placed in a high- temperature furnace. By exposing wafers to a flow of Ox gas, silicon dioxide film is formed on the wafer surfaces. Then silicon nitride film is formed on them by CVD method using silane and ammonia gas.
While the wafers are rotated at a high speed in a coater, they are covered with a uniform coat of photoresist. The resist characteristics change when the resist is exposed to ultraviolet (UV) light, thus forming an image on the wafer.
In a developer, the wafers are uniformly covered with a developing solution to develop the mask patterns. With positive photoresist, the portion that has been exposed to light becomes soluble, thus leaving the mask patterns on the wafer surfaces.
A plasma dry etch system is used to strip the dielectric films in accordance with the patterns developed on the photoresist. The portion protected by the photoresist remains intact, thus preserving the original pattern structure under the resist.
Gate film (Ox) is formed by oxidation and plasma nitridation process is applied to the surface of the gate film. Then, gate electrode film (polysilicon) is formed on it by CVD method.
Silicon waferシリコンウェーハ
UV light
PhotoresistSilicon wafer
Source/Drainソース /ドレイン
Gateゲート
Capacitorキャパシタ
Source/Drainソース /ドレイン
Source/Drainソース /ドレイン
LOGICDRAMNAND FLASH MEMORY
STI素子分離STI
素子分離STI素子分離
Contactコンタクト
Gateゲート
Gateゲート
Inter Layer Dielectric層間絶縁膜
Cross section 断面図
Inter Layer Dielectric層間絶縁膜
Interconnect配線
Interconnect配線
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5
Semiconductor manufacturing process 半導体製造プロセス
Interconnect formation 配線形成
Cross section 断面図
Wafer testウェーハ検査
Wafer processing ウェーハ処理プロセス
TFT array processing TFTアレイプロセス
ゲート電極層上にパターン形成プロセスを施し、ソース・ドレイン領域をつくる。
Source and drain areas are made by applying patterning processes to the gate electrode layer.
An ion implanter dopes the source and drain areas with impurities, such as boron and arsenic. Ox films prevent dopant ions from being implanted in other areas. Subsequent annealing diffuses these impurities to a more uniform density.
酸化膜をCVD法で堆積させ層間絶縁膜を形成し、表面を研磨して平坦にする。
Intermetal dielectric film is formed by oxide using CVD method and the film surface is planarized by polishing system subsequently.
絶縁膜上にパターン形成プロセスを施し、コンタクトホールを開口する。
Contact holes are opened by applying patterning processes to the dielectric film surface.
CVD法で金属膜を埋め込む。余分な膜は研磨で除去する。
The holes are filled with metal film by CVD, then excess metal is removed by polishing.
低誘電率膜等の層間絶縁膜を堆積する。次にパターン形成を行い配線となる部分（トレンチ）を開口する。
Low-dielectric-constant film is deposited followed by trench formation in the film by patterning process.
トレンチに金属膜を埋め込み余分な膜を研磨し除去する。
Metal films are filled into the trench and excess metals are polished.
層間絶縁膜堆積～金属膜埋め込み/研磨の一連のプロセスを必要な配線層数分繰り返す。
Processes from dielectricfilm formation to metalpolishing are repeated tomake a multi level inter-connect.
There are several hundreds of identical LSI chips on a fabricated wafer. Prober makes pins contact chips, and tests whether chips are good or bad electrically by exchanging signals.
Wafers are placed in a high- temperature furnace. By exposing wafers to a flow of Ox gas, silicon dioxide film is formed on the wafer surfaces. Then silicon nitride film is formed on them by CVD method using silane and ammonia gas.
While the wafers are rotated at a high speed in a coater, they are covered with a uniform coat of photoresist. The resist characteristics change when the resist is exposed to ultraviolet (UV) light, thus forming an image on the wafer.
In a developer, the wafers are uniformly covered with a developing solution to develop the mask patterns. With positive photoresist, the portion that has been exposed to light becomes soluble, thus leaving the mask patterns on the wafer surfaces.
A plasma dry etch system is used to strip the dielectric films in accordance with the patterns developed on the photoresist. The portion protected by the photoresist remains intact, thus preserving the original pattern structure under the resist.
Gate film (Ox) is formed by oxidation and plasma nitridation process is applied to the surface of the gate film. Then, gate electrode film (polysilicon) is formed on it by CVD method.
Silicon waferシリコンウェーハ
UV light
PhotoresistSilicon wafer
Source/Drainソース /ドレイン
Gateゲート
Capacitorキャパシタ
Source/Drainソース /ドレイン
Source/Drainソース /ドレイン
LOGICDRAMNAND FLASH MEMORY
STI素子分離STI
素子分離STI素子分離
Contactコンタクト
Gateゲート
Gateゲート
Inter Layer Dielectric層間絶縁膜
Cross section 断面図
Inter Layer Dielectric層間絶縁膜
Interconnect配線
Interconnect配線
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6 Consolidated Operating Results 連結業績
Net Sales売上高
Net Sales by Division部門別売上高
Composition of Net Salesby Division部門別売上構成比
TEL’s fiscal year ends on March 31. Each fiscal year described in this document is identified by the year in which it ends. For example, FY2015 is the fiscal year ended March 31, 2015.当社は3月31日を決算日としています。本誌記載の年度は各営業期間の終了した会計年度です。例えば、FY2015は2015年3月31日に終了した会計年度です。
Notes: 1. From FY2010 to FY2013, PV production equipment sales are included in FPD production equipment sales. 2. From FY2015, Tokyo Electron Device, which operates the Electronic Components and Computer Networks business, changed from
consolidated subsidiary to equity method affiliate.
Sales by division represents the sales to customers.部門別売上高は、外部顧客に対する売上高です。
’14
200,000
150,000
100,000
50,000
0
40
30
20
10
0
(¥ Million 百万円) (%)
SG&A expenses 販売費及び一般管理費SG&A expense ratio 販管費率
’11’10 ’12 ’13 ’15’14
600,000
450,000
300,000
150,000
0
40
30
20
10
0
(¥ Million 百万円) (%)
Cost of sales 売上原価Gross profit margin 売上総利益率
’12’11’10 ’13 ’15’14
100
75
50
25
0
(%)
’11’10 ’12 ’13 ’15’14
800,000
600,000
400,000
200,000
0
(¥ Million 百万円)
Semiconductor Production Equipment 半導体製造装置FPD Production Equipment FPD製造装置PV Production Equipment PV製造装置Electronic Components/Computer Networks 電子部品・情報通信機器Others その他
Notes: 1. Segment profit (loss) is based on income (loss) before income taxes and minority interests. 2. Segment profit (loss) of PV production equipment from FY2011 to FY2013 is included in segment profit (loss) of FPD production
equipment. 3. From FY2015, Tokyo Electron Device, which operates the Electronic Components and Computer Networks business, changed from
consolidated subsidiary to equity method affiliate.
FPD/PV Production Equipment Orders ReceivedFPD/PV製造装置受注高
FPD/PV Production Equipment Order BacklogFPD/PV製造装置受注残高
FY年度
(¥ Million 百万円)SPE orders received半導体製造装置受注高
2010 360,914
2011 567,971
2012 437,615
2013 342,547
2014 546,932
2015 626,795
FY年度
FPD Production Equipment orders received
FPD製造装置受注高
(¥ Million 百万円)PV Production Equipment
orders receivedPV製造装置受注高
2010 28,566
2011 75,433
2012 18,598
2013 21,965
2014 41,336 4,303
2015 35,301 (1,684)
FY年度
FPD Production Equipment order backlog
FPD製造装置受注残高
(¥ Million 百万円)PV Production Equipment
order backlogPV製造装置受注残高
2010 56,778
2011 65,491
2012 14,200
2013 24,427
2014 29,019 8,994
2015 31,611 3,692
FPD/PV Production Equipment SalesFPD/PV製造装置売上高
FY年度
FPD Production Equipment sales
FPD製造装置売上高
(¥ Million 百万円)PV Production
Equipment salesPV製造装置売上高
2010 71,361
2011 66,721
2012 69,888
2013 20,160
2014 28,317 3,805
2015 32,709 3,617
FY年度
(¥ Million 百万円)SPE order backlog
半導体製造装置受注残高
2010 172,303
2011 228,942
2012 188,684
2013 141,616
2014 209,914
2015 260,467
Notes: From FY2010 to FY2013, sales, orders and order backlog of PV production equipment are included in those of FPD production equipment. 注） 2010年3月期から2013年3月期まで、PV（太陽光パネル）製造装置の売上、受注、受注残はFPD製造装置の売上、受注、受注残に含めて表示しています。
’12 ’13 ’14
800,000
600,000
400,000
200,000
0
(¥ Million 百万円)
’11’10 ’15 ’14
400,000
200,000
100,000
300,000
0
(¥ Million 百万円)
’12’11’10 ’13 ’15 ’14
100,000
75,000
50,000
25,000
0
-25,000
(¥ Million 百万円)
’12’11’10 ’13 ’15
FPD Production Equipment FPD製造装置PV Production Equipment PV製造装置
’14
100,000
75,000
50,000
25,000
0
(¥ Million 百万円)
’12’11’10 ’13
FPD Production Equipment FPD製造装置PV Production Equipment PV製造装置
’15 ’14
100,000
75,000
50,000
25,000
0
(¥ Million 百万円)
’12’11’10 ’13 ’15
FPD Production Equipment FPD製造装置PV Production Equipment PV製造装置
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Fixed Assets and Fixed Ratio固定資産及び固定比率
FY年度
(¥ Million 百万円)Fixed assets
固定資産
(%)Fixed ratio
固定比率
2010 143,412 27.4
2011 164,973 28.2
2012 176,560 29.5
2013 254,026 42.0
2014 207,099 35.1
2015 205,271 32.0
Fixed ratio = Fixed assets / Total net assets × 100固定比率=固定資産÷純資産合計×100（%）
Consolidated Financial Data 連結財務データ
Working Capital and Current Ratio運転資本及び流動比率
FY年度
(¥ Million 百万円)Working capital
運転資本
（%）Current ratio
流動比率
2010 433,777 464.0
2011 476,193 383.4
2012 482,256 486.4
2013 414,830 488.9
2014 450,982 364.5
2015 498,070 388.2
Working capital = Current assets – Current liabilities運転資本＝流動資産−流動負債Current ratio = Current assets / Current liabilities × 100流動比率＝流動資産÷流動負債×100（%）
Receivable Turnover 売上債権回転日数
FY年度
(Days 日)Receivable turnover
売上債権回転日数
2010 109
2011 74
2012 87
2013 74
2014 77
2015 66
Receivable turnover = Trade notes and accounts receivable at fiscal year-end / Net sales × 365
売上債権回転日数＝期末受取手形及び売掛金÷売上高×365
Inventory Turnoverたな卸資産回転日数
FY年度
(Days 日)Inventory turnoverたな卸資産回転日数
2010 121
2011 92
2012 86
2013 100
2014 100
2015 105
Inventory turnover = Inventories at fiscal year-end / Net sales × 365
Debt-to-equity ratio = Interest-bearing debt / Total equity at fiscal year-end
デット・エクイティ・レシオ＝有利子負債÷期末自己資本×100（％）
400,000
300,000
200,000
100,000
0
60
45
30
15
0
(%)
’12’11’10 ’13
Fixed assets 固定資産Fixed ratio 固定比率
(¥ Million 百万円)
’14 ’15
600,000
450,000
150,000
0
600
450
300,000 300
150
0
(¥ Million 百万円) (%)
Working capital 運転資本Current ratio 流動比率
’12’11’10 ’13 ’14 ’15 ’14
200
150
100
50
0
(Days 日)
’12’11’10 ’13 ’15 ’14
200
150
100
50
0
(Days 日)
’12’11’10 ’13 ’15
20,000
0
20
10,000
15
5,000 5
10
15,000
0
(¥ Million 百万円) (%)
Interest-bearing debt 有利子負債Debt-to-equity ratio デット・エクイティ・レシオ
’10 ’12’11 ’13 ’14 ’15
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11
Cash Flowsキャッシュ・フロー
Total Liquidity on Hand手元資金
(¥ Million 百万円)
FY年度
Cash flow fromoperatingactivities
営業活動によるキャッシュ・フロー
Cash flow frominvestingactivities
投資活動によるキャッシュ・フロー
Cash flow fromfinancingactivities
財務活動によるキャッシュ・フロー
Cash and cashequivalents at
end of year現金及び現金
同等物期末残高
2010 48,284 9,613 (287) 123,939
2011 83,238 (35,881) (5,236) 165,050
2012 29,712 (8,352) (27,334) 158,776
2013 84,266 (141,769) (10,625) 85,313
2014 44,449 (19,599) (186) 104,797
2015 71,806 155,737 (18,213) 317,632
FY年度
(¥ Million 百万円)Total liquidity on hand
手元資金
2010 243,939
2011 285,050
2012 247,624
2013 240,129
2014 268,146
2015 317,682
Total liquidity on hand = Cash and cash equivalents at the end of the year + time deposits and short-term investments with maturities over three months
Equity = Net assets – subscription rights to shares – Minority interests
自己資本＝純資産−新株予約権−少数株主持分
400,000
0
200,000
–200,000’12’11’10 ’13 ’14 ’15
Cash flow from operating activities 営業活動によるキャッシュ・フローCash flow from investing activities 投資活動によるキャッシュ・フローCash flow from financing activities 財務活動によるキャッシュ・フローCash and cash equivalents at end of year 現金及び現金同等物期末残高
(¥ Million 百万円)
’14
360,000
270,000
180,000
90,000
0
(¥ Million 百万円)
’12’11’10 ’13 ’15’14
800,000
600,000
400,000
200,000
0
100
75
50
25
0
(¥ Million 百万円) (%)
Equity 自己資本Equity ratio 自己資本比率
’12’11’10 ’13 ’15 ’14
30
20
10
0
-10
(%)
’10 ’12’11 ’13 ’15 ’14
30
20
10
0
-10
(%)
’10 ’12’11 ’13 ’15
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Interest Coverage Ratioインタレスト・カバレッジ・レシオ
FY年度
(Times 倍)Interest coverage ratio
インタレスト・カバレッジ・レシオ
2010 (24.2)
2011 2,232.5
2012 1,428.8
2013 354.3
2014 508.6
2015 —
Interest coverage ratio = (Operating income or loss + Interest and dividend income) / Interest expenses
インタレスト・カバレッジ・レシオ＝（営業損益 ＋受取利息及び配当金）÷支払利息（倍）
R&D Expenses研究開発費
Capital Expenditures andDepreciation Expenses設備投資額及び減価償却実施額
FY年度
(¥ Million 百万円)R&D expenses
研究開発費
2010 54,074
2011 70,568
2012 81,506
2013 73,248
2014 78,663
2015 71,349
FY年度
Capitalexpenditures
設備投資額
(¥ Million 百万円)Depreciation
expenses減価償却実施額
2010 14,918 20,001
2011 39,140 17,707
2012 39,541 24,197
2013 21,773 26,630
2014 12,799 24,888
2015 13,183 20,878
Number of Employees Worldwide従業員数
FY年度
(People 人)Number of employees worldwide
従業員数
2010 10,068
2011 10,343
2012 10,684
2013 12,201
2014 12,304
2015 10,844
Net Income (Loss) per Employee従業員1人当たり当期純損益
FY年度
(¥ Million 百万円)Net income (loss) per employee
従業員1人当たり当期純損益
2010 (0.9)
2011 7.0
2012 3.4
2013 0.5
2014 (1.6)
2015 6.6
Notes: Amortization of goodwill is not included in depreciation expenses. 注） 減価償却実施額には、のれん償却額は含まれておりません。
’14
3,000
2,000
1,000
0
-1000
(Times 倍)
’12’11’10 ’13 ’15’14
100,000
75,000
50,000
25,000
0
(¥ Million 百万円)
’12’11’10 ’13 ’15 ’14
40,000
10,000
20,000
30,000
0
(¥ Million 百万円)
Capital expenditures 設備投資額Depreciation expenses 減価償却実施額
’12’11’10 ’13 ’15 ’14
16,000
8,000
12,000
4,000
0
(Persons 人)
’11’10 ’12 ’13 ’15 ’14
12
8
0
-4
(¥ Million 百万円)
4
’12’11’10 ’13 ’15
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Net Income (Loss) per Share1株当たり当期純損益
Cash Flow per Share1株当たりキャッシュ・フロー
Net Assets per Share1株当たり純資産
Cash Dividends per Share1株当たり配当金
Payout Ratio配当性向
FY年度
(¥ 円)Net income (loss) per share
1株当たり当期純損益
2010 (50.47)
2011 401.73
2012 205.04
2013 33.91
2014 (108.31)
2015 401.08
Net income (loss) per share = Net income (loss) / Average total number of shares outstanding in each fiscal year
1株当たり当期純損益＝当期純損益÷期中平均発行済株式総数
FY年度
(¥ 円)Cash flow per share
1株当たりキャッシュ・フロー
2010 61.28
2011 500.63
2012 340.14
2013 182.54
2014 30.58
2015 517.56
Cash flow per share = (Net income or loss + Depreciation and amortization) / Average total number of shares outstanding in each fiscal year
1株当たりキャッシュ・フロー＝（当期純損益＋減価償却費） ÷期中平均発行済株式総数
FY年度
(¥ 円)Net assets per share
1株当たり純資産
2010 2,859.37
2011 3,198.66
2012 3,275.14
2013 3,309.58
2014 3,225.92
2015 3,567.23
Net assets per share = Net assets / Total number of shares issued
1株当たり純資産＝期末純資産÷期末発行済株式総数
FY年度
(¥ 円)Cash dividends per share
1株当たり配当金
2010 12.00
2011 114.00
2012 80.00
2013 51.00
2014 50.00
2015 143.00
FY年度
(%)Payout ratio
配当性向Consolidated 連結
2010 —
2011 28.4
2012 39.0
2013 150.4
2014 —
2015 35.7
Payout ratio = Cash dividends per share / Net income per share × 100
配当性向＝1株当たり配当金額÷1株当たり当期純利益×100（％）
Notes: 1. The number of shares outstanding excluding the treasury stock is used for calculation of per share data. 2. FY2013 51 yen dividends include 20 yen memorial dividend of 50th anniversary.
Notes: 1. From FY2006, the Company adopts “Accounting Standard for Impairment of Fixed Assets”. 2. From FY2008, certificates of deposit that were previously included in cash and cash equivalents are classified as securities. 3. From FY2009, the Company adopts “Accounting Standard for Lease Transactions”.
Total liabilities and net assets 負債及び純資産合計 644,319 663,242 770,513 792,817 668,998 696,351 809,205 783,610 775,527 828,591 876,153
Notes: 1. From FY2007, the Company adopts “Accounting Standard for Presentation of Net Assets in the Balance Sheets”, “Accounting Standard for Directors’ Bonus”, “Accounting Standard for Stock Option”, and “Accounting Standard for Business Combination”. Accordingly, net assets for or before FY2006 are presented under new categories after the adoption of the new standards.
2. From FY2009, the Company adopts “Accounting Standard for Lease Transactions”. 3. From FY2011, the Company adopts “Accounting Standard for Presentation of Comprehensive Income”. 4. From FY2014, the Company adopts “Accounting Standard for Retirement Benefits” and “Guidance on Accounting Standard for Retirement Benefits.” Accrued pension and severance costs for or before FY2013 are included in Net liability for retirement benefits.
Income (loss) before income taxes and minority interests 税金等調整前当期純利益（損失） 55,775 75,328 144,414 169,219 9,636 (7,767) 99,579 60,602 17,766 (11,756) 86,827
Net income (loss) 当期純利益（損失） 61,601 48,005 91,262 106,271 7,543 (9,033) 71,924 36,725 6,076 (19,408) 71,888
Notes: 1. From FY2006, the Company adopts “Accounting Standard for Impairment of Fixed Assets”. 2. From FY2007, the Company adopts “Accounting Standard for Directors’ Bonus”, “Accounting Standard for Stock Option”, and “Accounting
Standard for Business Combination”. 3. From FY2011, the Company adopts “Accounting Standard for Presentation of Comprehensive Income”. 4. From FY2014, the Company adopts "Accounting Standard for Retirement Benefits" and "Guidance on Accounting Standard for Retirement
Consolidated Statements of Comprehensive Income 連結包括利益計算書
(¥ Million 百万円)Years ended March 31 3月31日終了の会計年度 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015Income (loss) before minority interests 少数株主損益調整前当期純利益（損失） (8,493) 72,807 37,179 6,358 (19,213) 71,928
Other comprehensive income (loss) その他の包括利益Changes in fair value of investment securities その他有価証券評価差額金 3,349 303 768 651 1,365 3,868 Changes in deferred gains or losses on hedging instruments 繰延ヘッジ損益 (151) 71 (68) 55 91 69 Foreign currency translation adjustments 為替換算調整勘定 545 (3,584) (925) 8,760 6,867 6,642 Remeasurements of defined benefit plans 退職給付に係る調整額 — — — — — (2,269)Share of other comprehensive income of associates accounted for using equity method 持分法適用会社に対する持分相当額 — — — — — 56 Total other comprehensive income (loss) その他の包括利益合計 3,743 (3,209) (225) 9,467 8,324 8,366
Comprehensive income (loss) 包括利益 (4,750) 69,598 36,953 15,826 (10,888) 80,295
Total comprehensive income (loss) attributable to: 内訳Owners of the Company 親会社株主に係る包括利益 (5,269) 68,732 36,531 15,425 (11,150) 80,224 Owners of minority interests 少数株主に係る包括利益 518 866 422 400 261 70
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17Consolidated Statements of Cash Flows 連結キャッシュ・フロー計算書
(¥ Million 百万円)Years ended March 31 3月31日終了の会計年度 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Cash flows from operating activities 営業活動によるキャッシュ・フロー
Income (loss) before income taxes and minority interests 税金等調整前当期純利益（損失） 22,253 6,439 (8,494) (10,562) (18,406) (7,842) 3,705 14,776 19,250 25,798 26,623 27,906Ratio of income before income taxes and minority interests to net sales 税金等調整前当期純利益率 14.4% 4.4% (8.4%) (10.0%) (26.7%) (9.2%) 3.2% 9.8% 13.3% 14.9% 16.7% 14.6%
Notes: 1. From FY2007, the Company adopts “Accounting Standard for Director’s Bonus”, “Accounting Standard for Stock Option”, and “Accounting Standard for Business Combination”.
2. From FY2009 to FY2013, PV production equipment sales are included in FPD production equipment sales. 3. From FY2015, Tokyo Electron Device, which operates the Electronic Components and Computer Networks business, changed from
consolidated subsidiary to equity method affiliate.
Price / earnings ratio = Common stock price / Net income per share 株価収益率 ＝ 株価 ÷ 1株当たり当期純利益Price / book value ratio = Common stock price / Net assets per share 株価純資産倍率 ＝ 株価 ÷ 1株当たり純資産Price / cash flow ratio = Common stock price / Cash flow per share 株価キャッシュ・フロー倍率 ＝ 株価 ÷ 1株当たりキャッシュ・フロー
■ Number of Shares Issued (Fiscal Year-End) 発行済株式数の推移（期末）
2009I II III IV I II III IV I II III IV I II III IV I II III IV I II III IV I
2005 2006 2007 2008II III IV I IV
2010I II III
2011 2012 2013I IV I
2015II III
2014
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■ Major Shareholders (Top 10) 大株主一覧（上位10位）As of March 31, 2015 2015年3月31日現在
Name株主名
Number of shares held (thousands)持株数（千株）
Voting share ratio (%)持株比率（%）
The Master Trust Bank of Japan, Ltd. (trust account) 日本マスタートラスト信託銀行株式会社（信託口） 18,995 10.59
The Bank of New York Mellon as Depositary Bank for DR Holders ザ バンク オブ ニユーヨーク メロン アズ デポジタリー バンク フオー デポジタリー レシート ホルダーズ 12,669 7.06
Deutsche Bank Trust Company Americas ドイチェバンクトラストカンパニーアメリカズ 10,613 5.92 Japan Trustee Services Bank, Ltd. (trust account) 日本トラスティ・サービス信託銀行株式会社（信託口） 10,095 5.63
Tokyo Broadcasting System Holdings, Inc. 株式会社東京放送ホールディングス 7,727 4.31
BNP Paribas Securities (Japan) Limited BNPパリバ証券株式会社 3,645 2.03 The Bank of New York Mellon SA/NV 10 ザ バンク オブ ニユーヨーク メロン エスエーエヌブイ 10 3,544 1.97
Citibank, N.A.-NY, as Depositary Bank for Depositary Share Holders CITIBANK, N.A.-NY, AS DEPOSITARY BANK FOR DEPOSITARY SHARE HOLDERS 2,606 1.45
Mizuho Securities Co.,Ltd みずほ証券株式会社 2,228 1.24
Notes: 1. Shares of less than one thousand have been rounded down in the “Number of shares held.” 2. Voting share ratio is calculated excluding treasury stock (1,344,892 shares).
Number of shareholders and shares includes number of odd lot shareholders and odd lot shares.株主数及び株式数は、単元未満株主数及び単元未満株式数を含んでいます。
2014Japanese financial institutions and securities companies 金融機関・証券会社Foreign institutions and others 外国法人等Japanese individuals and others 個人その他Other Japanese corporations その他の法人Treasury stock 自己株式
2012
2011 40.5% 43.3% 10.0% 0.9%5.3%
2013
41.6% 42.7% 9.6% 0.8%5.3%
36.4% 9.5% 5.3%48.0% 0.8%
38.3% 7.0% 5.2%48.7% 0.8%
2015 35.0% 5.0% 5.0%54.3% 0.7%
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2015
TOKYO ELECTRON LIMITED
World Headquarters
Akasaka Biz Tower 3-1, Akasaka 5-chomeMinato-ku, Tokyo 107-6325, JapanTel: +81-3-5561-7000URL: http://www.tel.com
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目次CONTENTS
TOKYO ELECTRON
As o f March 31 , 2015
FACTBOOK
PR53-134
PR00-000
Printed in Japan
本誌は再生紙を使用しています。Printed on recycled paper.
Tokyo Electron (TEL) Overview東京エレクトロン（TEL）の事業概要
Global TELTELの世界展開
Industry Data インダストリー・データ
Semiconductor & TFT-LCD Manufacturing Process Flow
半導体製造工程及びTFT-LCD製造工程
Consolidated Operating Results連結業績
Semiconductor Production Equipment (SPE) and
FPD/PV Production Equipment半導体製造装置・FPD/PV製造装置
Consolidated Financial Data連結財務データ
Consolidated Balance Sheets連結貸借対照表
Consolidated Statements of Operations連結損益計算書
Consolidated Statements of Comprehensive Income
連結包括利益計算書
Consolidated Statements of Cash Flows連結キャッシュ・フロー計算書
