UNCLASSI FIED - DTIC · 2018. 11. 9. · This report was prepared by Hughes Aircerft Company under...

UNCLASSI FIED

DEFENSE DOCUMENTATION CENTERFOR

SCIENTIFIC AND TECHNICAL INFORMATION

CAMERON STATION. ALEXANDRIA. VIRGINIA

UJNCLASSI[FIED

Rl

NOTICE: When government or other dravings, speci-fications or other data are used for any purposeother than in connection i.th a Cefinitely relatedgovernment procurement operatior., the U. S.Government thereby incurs no responsibilityo nor anyobligation whatsoever; and the fact that the Govern-ment may have formileted, furnished, or in any waysupplied the said drawinga, specifications, or otherdata is not to be regarded by implication or other-viae as in any manner licensing the holder or anyother person or corporationo or conveying any rightsor permission to manufacture, use or sell anypatented invention that may in any way be relatedthereto,

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CO14TRACTAF 33S(8661 38'PnOJECT73at. TASK739-103

~ SI_0JCbN' 'ECECTRICAL CMCTIVITY

Daa het

June 1963

'YAW

flUG~it5,tWCMA~l Co "NSdCuS~val C.'v -ALIPORMNA D

LAU 1. JM1SIA D~

CONTRACT AF 33(616) -8438PROJECT 7381. TASK 738103

0

SILICON: ELECTRICAL CONDJCTIVITY

Data Sheets

M. Neuberger

DS-126June 1963

.............................HUGHES

jw t0 5 A* ACAl FT C OLPANYc UtVtft CITY C Al.0C%%A

C DS-12 DS-126

FORWORD

This report was prepared by Hughes Aircerft Company under Contract under Contract

No. AF 33(616)-8438. The contract was initiated under Project No. ject No.

7381, Task No. 738103. The work was administered under the direction ae direction

of the Directorate of Materials anl Processes, Aeronautical- Systems 3 Systems

Division, with Mr. RF. Klinger acting as Project Ergineer.

Many persons have contributed to the progrm which this report his report

represents. The author wishes especially to acknowledge the con- t.a con-

tributions of the following: J.J. Anders, J.W. Atwood, C.L. Blocher, .L. Blocher,

D.L. Grigsby, J.J. Grossman, r.S. IHartar, D.H. Jchnson, H.T. Johnson, .T. Johnson,

J.T. Milek, G.S. Picus, and E. Schafer.

:S-126

ABSrRN~r

The Electronic Properties Information Center has been established

to collect, index and abstract tho literature on the electrical and

electronic properties of materials and to evaluate and acmpile the

to tde literature is machine stored and printed for manual use. The

Center publishes data sheets, sumary reports, thesauri, glossaries,

and simila. publications as sufficient information is evaluated and

compiled. This report consists of the conpiled data sheets on Silicon:

Electric- 1 Conductivity.

This report has been reviewed and is approved for publication.

H. y? Jbns Spervisor

Electronic = es Information Center

PIC W. Atwod(Dject Manager

iii

DS-126

INTRODUCTION

In June 1961, a program was initiated under the direction of the

Air Force to collect, index and abstract the literature on the elec-

trical and electronic properties of materials and to evaluate and

compile the e.perimental data from that literature. Placed at Hughes

Aircraft Company in Culver City, California, the program, now called

the Electronic Properties Information Center, whs originally intended

to cover ten major categories of materials: Seniconductors, Insulators,

Oerumics, Farolectris, Metals, renites, Ferrwsnetics, Electro-

luminescent Materials, Thermionic Emitters, and Superconductors.

iring the first year, studies were completed on the Semiconductor

and Insulator categories; and Ceramics was discontinued as a separate

category and subsumed under the other nine. Vocabulary studies have

now been ccmpleted on all categories, and retrospective docuzmentation

is virtually complete for Semiconductors and Insulators. A full index

to the literature is maintained; and publications such as data sheets,

sunmary reviews, glossaries, and thesauri are periodically issued.

The use of the Center and these publications are available to an,.one

wishing information within the scope of the Center's objectives. A

full list of publications to date appears at the end of this report.

This report contains data sheets on Silicon: Electrical Conductivity.

The data sheets have been compiled direct fron the literature. Articles

are allowed to accumulate ip the system until it is j7dgcd that a

sufficient number are available on one materia] for a, equate evaluation.

I

DS-126

The manual modified coordinate index is then used to retrieve all litera-

tme on the material to be compiled. Bibliogrepdes are checked to make

sure that valuable and relevant literature is not overlooked. Then the

assembled literature is given to the specialist doing the evaluation

and compilation.

Evaluation is confined to primary source data except when only

secondary citations are available. If equally valid data are avail-

able from several sources, all ame given. Data are rejected when

judged questionable because of faulty or dubious measureants, unknown

sample composition, or if more reliable data are available from another

source. Selection of data is based upon that which is judged most

representative, precise, reliable, and covers the widest range of

variables. The addition of new data to a previously evaluated property

requires a reappraisal of the reported values. Older data may be de-

leted if the new data are judged more accurate or representative.

After a thorough analysis and evaluation, the data is compiled

into data sheets which present it in its most optimum form. This will

be, primarily, but not limited to, curves or tabular form. Where

possible, graphs are adapted directly from the original sources. If

this is not possible, they are drawn from data compiled fram the

articles. Where thought important, notes are entered with each graph

to help the user.

The references, from which the data are drawn, are shown by refer-

ence number below each graph with the full bibliographic information

2

DS-126

at the end of the data sheets. The bibliography is referred to

and listed in the order of entry into the Center (acce&sion wnber).

This provides a quick cross reference into the index used with the

literature.

This compilation deals only with Silicon: Electrical Conductivity

as a Samiconductor. km-saiconductor data will be included in a

future revision.

3

MATERIALS CENTRALDATA SHEET AIR OATCA SYSTEMS COVIMANAIRORA7CL SYSTEMS COMMAIND

ELECTRICAL AND ELECTR3NIC PROPERTIES

SEMICONDUCTOR MATERIALS JTune 1963

SILICON

Electrical Conductivity

Temperature 01:

Temperature ranges for electrical condtuctivity measurementsshown on following pages. \tuihers at thie end of each lineare the reference nuiihers.

DATA SHEET MATERIALS CENTRALD A A S E TAERONA11IC,/r. SYSTEMS DIVSION

AIR FORCE SYSTEMS COMMAND

ELECTRICAL AND ELECTRONIC PROPERTIES

SEMICONDUCTOR MATERIALS June 1963

S1LIOM~

Elcctrical Conductivity

50 25 17 12.5 10 OKI I I

0.

(1/Temperature) *K-1

log Electrical conductivity of single crystal, p-type siliconas a function of temperatur..

[Ref. s32J

S,

MATERIALS CENTRALDATA SHEYUTMM DIVISIONE~~T~e SII EElAIR 70303 8STTMS COMMAND 4ELECTRICAL AND ELECTRONIC

PROPERTIES


SILICON

Electrical Condu.tivity

*c

W ,Found by PulleyLround hot$

,o" -"-'-t'- (5)g !-

(1/Tmperature) 103 *K"1

Electrical conductivity of p-type silicon single crystalsas a function of the temporature. The cuves (1) and (2)are taken fru a paper by Putloy and Mitchell. Saples 5and 6 are intrinsic. Boron impurity level reduced to 1011(".3 ,

(Ref. 446S)

MATERIALS CENTRALAEONAUTICAL SYSTEMS DIVISION

DSAIR FORCE SYSTEMS COMMANDELECTRICAL AND ELECTRONIC PROPERTIES


SILICON


2W0*K 220 240 260 NO 300 320 340 3*0 300 400 W4K

I °o

t 20

--- -

I I

.14

II - I.I I

2 30 2640 2-0 ito

log Temperature *K

Electrical conductivity of p-type, single crystal silicon as afunction of temperature. p - 74 ohm an at 3000 K.

[Ref. 3901)

7

DMATERIALS CENTRALDA A S E TAVONAUTnCAL SYSM DMM14O

AIR FORCE SYSTXMS COMMAND ,ELECTRICAL AND ELECTRONIC PROPERTIES

SEMICONDUCTOR MATERIALS Jim 193


o o a

4 t N 0 fn ' ItN )

aoomU 0 Min & N ITA

I-5

iO- Ct1 OS C 1,0~j . S S

(l/Temperature) 103 *X-I

Flectrical conductivity as a function of temperature forintrinsic, single crystal, n-type silicon.

(Ref. 29s6]

_.C

MATERIALS CENTRALDATA SHEET AERONAUTICAL SYSTEMS DIVISIONAIR FORCE SYSTEMS COMMAND



SILICON


' 10"4

10-AA "

4 a

1 10 100Voltge (Volts an-)

Electrical conductivity of single crystal silicon as a function offield at 20.75°K. Sample is n-type. nD• 8.2 x 015 c -3; nAi.6 x 1012 an- 3 .

[Ref. 26461

v14

DEATA ETCENTRD A TA SE AERONAUTICAL SYSTMS DIVSION" AIRL "OICE SYSTEMS COMMAI4bELECTRICAL AND ELECTRONIC PROPERTIES

SEMICONDUCTOR MATERIALS ,un 1

SILICON


t 1

I010

i--'

w o

6/

/

Voltage (Volts crn l)

Electrical conductivity of single crystal silicon as a fun~tionof field at 20,TS0 K, Conductivity of saple at 3OO0K - 2,08 (ohto an)"t . (

[Ref. 2646]

10

-MATERIALS CENTRALDATA SHEET AE30NAUTICAL SYSTEMS DIVISION(j AIR FORCE SYSTEMS COMMANDELECTRICAL AND ELECTRONIC PROPEKTNES


SILICON


lox Cm

102 3001X

a

10 1102 10

3 104

Voltage (volt an-1)

Current - Voltage relation for single crystal, n-type silicon;n - 3 x 1015 an"3 at 3000K. O.S and 0.6 show slope of curveat two points.

[11f. 30121

11

DATA SHEET MATERIALS CENTRALD A TT AERONAUTICAL SYSTEMS DIVISION~AIR FORCE SYSTEMS COMMANDELECTRICAL AND ELECTRONIC PROPERTIESI

SEMICONDUCTOR MATERIALS Juno 196

SILICON

lectrical ConductivityOK

>

.t

VL L WU

i itI ! i

0 &a Oh 04 4 OM 0 . 09* Ofl 04 0.900 0 4009*

(I/Temperature) 'K-1 (I/Temperature) *K"Electrical conductivity of single crystal Electrical conductivity of singleboron-doped silicon as a function of crystal, arsenic-doped silicon as atemperature. Sample data given in Table function of temperature. Samplebelow, data given below.

Oh CM6 com""0 9 fL wvm- A4d& 1. r m' £t0H W 1"

I $I * .$ M OM sm . x lO' W,

129 &.04 I isX10" 2t.43Xio la IW1C

116 ? " X10 Wft

140 dcaumI. LT XION anroi

159 0*4 11,1 XI' 4.l XWd 0.415, U"i 71 TOM U X14" Uis, *as4 ?A XP Li X~l 0.*

tr 2.0 at 1*9 lon 0 bom1411 l X19m

,,

I W d1aoumt' IJX190 bUB[Ref. 430)

12

ATA SHEETMATERIALS CENTRALD A A SE AERONAUTICAL SYSTEMS DIVISIONI AIR FORCE SYSTEMS COMMANDELECTRICAL AND ELECTRONIC PROPERTIES


SILICON 550 500 444 00 333 208 290 °K

Electrical Conductivityv

Electrical conductivit as Ifa function of temperature r'for single crystal silicon. 0ZG 131: n-typo, , hosphorus- Udoped NA I.8Xl 3;ND- II2xI010. ZG 133; p-ypeiboron-doped, NA-3.xlOND-3.3x0O13. ZG 136; ..p-type, boron-doped, . r ,, -* -NAS.3XI O03; ND4.7xJ0' 3. _______-,_____________

(I/Temperature) l03 0K'

jRef. 990]

Electrical conductivity as afunction of temprature forsingle crystal silicon. Boron-

t; C" 0doping is same for all samples,

". " Phosphorus-doping:

.0.9) N1 4 1.4 x 1016 oCn3

9B) N D - 1.2 x 1016 n "-3

• U"" 9A) ND - 1.6 x 1016 ai3

w CP s

C Z 4 * • 4 4 si t 9

Temperature OK[ef. 6471

13

MATERIALS CENTRLAERONAUTICAL SYSTEMS DIVSIONDATA SHEET AIR FORCE SYSTEMS COMMAND



SILICON 10 S 3,3 2S 2 1,7 1.4 'K


Electrical conductivity as a functionof temperature for single crystal ..silicon, boron and phosphorus-doped.NA 0.8xl1O5 a. 3 ; ND * 2.7xl017 cm ,o 4

C)C

to~t

10-11

III ..4

. U, * - ..: . ,.,. - r --

10..4 1.1 - 0 0

- 4o cps E l rc 2 3 4 f nci

,O-. of teoperaur(I/Temperature) cK'lx 10Ce.S [Ref. 6471

-

-> A

tO 1 I I

• " .U' Electrical conductivity as a function• ., .of temperature for single crystal

• ,." •silicon, pho-sphorus-doped,

N P~v 1 .5 x 0 '" m

0 4 G 12 10 20

Temperature K647)

14

MATERIALS CENTRALDATA SHEET AfRONAUTICAL SYSTEMS DIVISIONAIR FORCE SYSTEMS COMMAND


SEMICONDUCTOR MATERIALS June 1963SILICM' 3.33 2.85 2.5 2.22 2,0 *K

Electrical Conductivity 4 -0*4 2

Electrical conductivity as a function -- -- ,of temperature for single crystal, 7p-type, thallium-doped silicon. s 't**25 VNa-SOohmall. f. '0

C) 'S 30 40 5 0-4

S300 35 400 45 0

(1/Temperature) 103 *K-1[Ref. 182)

333 250 200 166 1A3 125 Ill *K

4.)

I

Ll 3 4 5 6 7 8 9(I/Temperature) 103 *K-1

Electrical conductivity as a function of temperature for singlecrystal, copper-doped sidicon. Original sample, P - I oln, cm at3000K, n-type, nD - 2.7 x 1015 cm 3.

[Ref. 2769]

15,i

'I

DATA SHEETMATERIALS CENTPALAIR FORCE SYSTEMS COMMAND



SILICON 500 333 250 *K

Electrical Conductivity IO j 0

Electrical conductivity asa function of temperaturefor gold-doped, singlecrystal silicon. Originalsample,°" l d ofn-type, n = 2.3 x 10 ma.

Stos

t! 8 4

(I/Temperature) 103 K1 (f. 2769]

16

MATERIALS CENTRALAERONAUTICAL SYSTEMS DIVISIONAIR FORtCE SYSTEMS COMMAND



SILItfON

Electrical ConductivitySo0 3.33 2SO OK

-3I0

( Electrical conductivity as afunction of temperrture forsingle crystal, copper-doped,p-type silicon, n - 2.3 to 4.6 x I0l ai"3 . Originalsample; n-ty.,p 1 ohm , .n 2.3 x I0" Cn' o

o

.5.9.

(1/Temperature) 103 *K-1

(Ref. 27691

17

S EMATERIAS CENTDATA SHEET AERONAUTICAL SYSTEMS DIVIRIONAIR FORCE SYSTSMS COMMAND


SEMICONDUCTOR MATERIALS Je 96

SILICON

References

182. SiANJ R.G. Tight-Bonding Calculation of Acceptor Energies inGenanium and Silicon. Physics and Chemistry of Solids, vol. 2,no. 2, p. I15-1180 1957.

430. NYRIN. F.J. and J.P. 'IAITA. Electrical Properties of SiliconContaining Arsenic and Boron. Physical Review, vol. 96, no. 1,p. 28-35, October 1, 1954.

532. ROLLIN, B.V. and E.L. SI'M)NS. Long Wavelength Infra RedPhotoconductivity of Silicon at Low Temperatures. P ysical Society,Proceedings '3, vol. 66, pt. 3, p. 162-168, March 19ST, .

647. POLLAK, NI. and T.Il. GEBALL,. Low-Frequency Conductivity Due toHfopping Processes in Silicon. Physical Review, vol. 122, no. 6,p. 1742-1753, June IS, 1961.

990. PUTLY, E.II. and W.11. %IIaMIELL. The Electrical Conductivity andHall Effect of Silicon. Physical Societ Proceedings,_vol. 72,pt. 2, p. 193-200, August

v9S.

2646. ZYLBELSZTUJN, A. lonisation par Chvc clans le Silicium. Saturationdu Phenomene. [Ionization by Shock in Silicon. Saturation Phenomena.]Journal of Electronics and Control, vol. 8, no. 2, p. 97-101,February 1960.

2769. STANFORD EL.ECTRONICS LABS., Stanford U., Calif. An ExperimentalInvestigat.on of the Energy Levels of Copper and Cold in Siliconand a Search for Accompanying Impurity Band Conduction, by R.E.Aitchison. 31 Aug 60, 28 p. Technical ret. no. 211-2. ContractAF 33(616)6207. ASTIA AD-244 171.

29S6. LAW J.T. and E.F. FRANCOIS. Adsorption of Cases on a SiliconSurface. Journal of Physical Chemistry, vol. 60, no. 3, p. 353-358,Mtarch, 1956.

3012. BOK, J. Etude des Porteurs de Charge dans les Semi-conducteurs aChamp Electrique glev6. [Study of harge Carriers in SemiconductorsSubjected to an Intense Electric Field.I Annales de Radio6lectricite,vol. IS, no. 60, p. 120-146, April 1960.

18

MATERIALS CENTRDATA SHEET AERONAUTICAL SYSTEMS DIVISION1R FORCE SYSTEMS COMHAND



SILICON

References (Continued)

3901. EVANS, I).%. The Temprature flependencF. of the Low-Level Lifetimeand Conductivity Mobility of Carriers in Silicon. .Journal ofElectronics and Control, vol. 7, no. 2, p. 112-122,_ August 1959.

4465. IKITM'4,N A., K. REISIEL and II. RUPPRFCIIT. %leasurement of the HallEffect and Conductivity of Super-Pire Si.licon. Physics andCheistry of Solids, vol. 11, no. 3/4, p. 284-287 tober 1959.

19

D)6-126

PUBLICATIONS OF THE ELECTIONIC PROPMET1IES INFOR1ATRT CTER

Suwrary Reviws and Data Sheets

WS-101. Cadmium Telluride - Data Sheets. H. Neuberger. June 1962.

DS-102. Indium Phoephdde - Data Sheets. H. Nouberger. June 1962.

D6-103. Indium Telluride - Data Sheets. H. Neuberger. June 1962.

DS-10#. KMagnsium Silicido - Data Sheets. M. Neuberger. June 1962.

DS-105. Polyethylene Terephthalate - Data Sheets. John T. Hixek.June 1962.

DS-106. Polytetrafluooethylone Plastics - Data Sheets. Dnil Schafer.Juno 1962.

DS-107. Polytr.ifluoroculoroethylene Plastics - Data Sheets. Emil Schafer.June 1962.

DS-108. Zinc Telluride - Data Sheets. H. Neuberger. June 1962.

DS-109. Indium Arsenide - Data Sheets. H. Neuberger. July 1962.

DS-110. Aluniim Antimonide - Data Sheets. H. Neuberger. Sept-nber 1962.

L-111. Gallium Phosphide - Data Sheets. H. Neuberger. September 1962.

DS-112. Gallim Antimonide - Data Sheets. H. Neuberger. October 1962.

DS-113. Lead Telluride - Data Sheets. M. Neuberger. October 1962.

DS-114. agnesiun Staanide - Data Shoots. H. Neuberger. October 1962.

DS-115. Gallium Arsenide - Data Sheets. H. Neuberger. November 1962.

DS-116. Lead Selenide - Data Sieets. H. Neuberger. December 1962.

DS-117. Silicon: Absorption - Data Sheets. H. Neuberger. Decem1r 1962.

P-118. Silicon: Debye Temperature - Data Sheets. M. Neuberger.Jamn-ary 1963.

DS-119. Silicon: Dielectric Constant - Data Sheets. H. Neubelger.January 1963.

20

DS-126

DS-120. Silicon: Mean Free Path - Data Sheets. M. Neuberger,January 1963.

DS-121. Indium Antimonide - Data Sheets. M. Neuberger. February 1963.

DS-122. Steatite - Data Sheets. Jchn T. Milek. February 1963.

DS-123. Berylliu Oxide - Data Sheets. John T. Milek March 1963.

DS-124. Cadmim Sulfide - Suxt-my Review and Data Sheets. M. Neuberger.April 1963.

DS-125. Magnesium Oxide - Data Sheets. John T. Milek. June 1963.

21

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