University of California • Berkeley • San Diego • Los Angeles
1st Bi-Annual Workshop
IMPACT integrated modeling, process, and computation for technology
http://impact.berkeley.edu
Kameshwar PoollaMechanical Engineering
Electrical Engineering & Computer SciencesApril 09, 2008
IMPACT • 2
The Industry Team – Thanks!
IMPACT • 3
Workshop Objectives and AgendaObjectives
Overview research progressOpportunity for New Sponsors (IBM, Sandisk, Marvell, Spansion) and New Faculty (Alon, Gupta, Hu, Kahng) to see how we workDialog on mutual research interests Feedback on operational activitiesMeet our students!
Agenda12:30-12:55 Overview 12:55-3:00 Faculty Overview Presentations3:00-4:00 Student Poster Discussion (Refreshments) 4:30-4:45 Q&A for Steering Committee4:45-5:45 Steering Committee Meeting5:45-6:15 Feedback from Steering Committee
IMPACT • 4
The Faculty TeamAlon, Elad EECS UCB Integrated System Design, Mixed-signal ICsChang, Jane ChE UCLA Plasma mechanisms, feature modelingCheung, Nathan EECS UCB Plasma modeling, diagnostics, surface intenractionsDornfeld, David ME UCB CMP modeling, mechanics aspects Doyle, Fiona MatSci UCB CMP modeling, chemistry effectsKomvopoulos, K. ME UCB Surface Polishing, NanomechanicsGraves, David ChE UCB Plasma modeling, diagnostics, surface interactionsGupta, Puneet EE UCLA DfM, Optimization, Variability AnalysisHaller, Eugene MatSci UCB Dopant and Self-Diffusion in Si and SiGe AlloysHu, Chenming EECS UCB Device Modeling, Variability AnalysisKahng, Andrew EECS UCSD DFY, DFM, algorithmsKing, Tsu-Jae EECS UCB Novel Electron DevicesLieberman, Michael EECS UCB RF sources and E&M plasma modelingNeureuther, Andrew EECS UCB Litho, Pattern Transfer, Modeling/SimulationPoolla, Kameshwar ME/EE UCB DFM, Modeling, Computation, Control, MetrologySpanos, Costas EECS UCB IC Process Metrology, Diagnosis and ControlTalbot, Jan CE UCSD Chemical-Mechanical Planarization
IMPACT • 5
Facts & Figures
Project– February 2008 to January 2012
Budget– Total $ 8.9 M– Industry Cash $ 4.1 M– State Matching$ 4.8 M
Major Equipment Donations– Centura 200 epitaxial tool from Applied Materials– EM Suite Simulation Package from Panoramic Technologies– Wafer/Mask processing credits: Spansion, SVTC, Dupont, Photronics
Personnel– 17 Faculty + 23 Graduate Students + 5 Post-docs + 3 Undergraduates
All research agreements in place– Terms are more favorable to our sponsors than under FLCC
IMPACT • 6
Activities
Workshops– Twice per year– Feedback from steering committee
Bi-weekly Seminar – Mondays 11-12am
Round-table Groups: Need host company volunteers & feedback on themes– Litho: double patterning, inverse litho– CMP: fast models for design needs– Etch: simulation capabilities needed by industry– DMI: understanding computation/modeling needs at various points in flow– Novel Technologies: Devices, variability, materials, metrology?
IMPACT • 7
Activities …
Student Internships and Hiringhttp://impact.berkeley.edu/internal/internship/internship.htm
Recruiting more industry partners– Sister program – Micron, TSMC, UMC, Chartered, Qualcomm– Not all are State of California based, so we won’t use UC Discovery– So it may get complicated!– Is this a good idea?
Website and Wiki– Will be updated– Wiki may be an excellent way to share information, papers, ideas
Feedback: [email protected]
IMPACT • 8
Nanofabrication at UCB: The Marvell Lab• A premier, shared research lab
– Enabling world-class research involving micro/nanofabrication
• wide ranging, multi-disciplinary• innovative, with commercial
and social impact– ~15,000 sq.ft., 2 floors
• Supporting education & outreach– summer internship and
visiting researcher programs– web-cams for live views & interaction
• Serving the industry– CMOS baseline (150mm/200mm) for integration of new
materials and interfacing with nanoscale technologies – Testbed sites for tools, processes, process monitoring
New tool installation beginning in December 2008, followed by migration of all established capabilities in 2009-2010
IMPACT • 9
Key Capabilities / Needs for the NanolabLithography– 150mm e-beam lithography acquired and operational, will migrate– 150/200mm DUV (248nm) stepper under discussion with ASML– 150mm tracks available; 200mm needed
Etch– Lam Research is considering donating 200mm resist strip and Si etch– Existing 150mm tools (Applied Materials and Lam Research) will migrate
Wet Process– 4 of 12 stations secured by decommission/donation– Additional decommission possibilities needed
Deposition– 150mm ALD tool purchase in process; 200mm upgrade requires ~$40K– Established 150mm LPCVD and PVD tools will migrate; 200mm needed
Thermal– 150mm atmospheric furnaces and RTP tools will migrate; 200mm needed– AMAT gate stack tool commitment in Year II
IMPACT • 10
Applied Materials Equipment Donation
Centura Epi RP system:– fair market value = $2,000,000
+ installation & service support– 200mm wafer processing– Delivery in 2009 (Year II)
Relevance to IMPACT:– Preparation of Si1-x Gex active layers for transfer onto oxidized Si wafers
and subsequent MOSFET fabrication– Growth of Si1-x Gex /Si heterostructure samples for dopant-diffusion
studies– Fabrication of MOSFETs with highly engineered channels for enhanced
mobility and reduced variability
IMPACT • 11
Si Validation via Multi-Student Test Masks
ResourcesCAD Tools: Cadence, Calibre, HSPICE
non-rectangular BSIM, Collaborative DfM PlatformMasks: First-pass research quality with phase-shifts (even 90o) – 2 per year from Toppan and likely Photronics– Can be shuttle for NMOS/CMOS (8 layers on 2 photomasks)
Processing:– Berkeley Micro or Nano Labs (248 nm, NA = 0.5, Centura) – SVTC via ASML (193 nm, NA = 0.85)
If the research merits your fab or foundry participation– Advanced production tooling (193 nm NA = 1.35)– CMOS flow (under NDA with design kit)
Involvement with layout, mask making, process flow, measurements and analysis makes the research and educational experience real
Cypress Poly Block
Cypress DDLI Block
Metal Active Contact
Corner Poly
Center Poly
Cypress Poly Block
Cypress DDLI Block
Metrology
Quasar OPC Poly
Annular OPC Poly
Cypress Poly Block
Cypress DDLI Block
Metal Active Contact
Corner Poly
Center Poly
Cypress Poly Block
Cypress DDLI Block
Metrology
Quasar OPC Poly
Annular OPC PolyDuPont
Mask
Cypress Wafer Fab.
ToppanMask
SVTC
IMPACT • 12
Our Research
Five Inter-connected Research Themes:
Novel Technologies
Tsu-Jae King
CMP
Dave Dornfeld
Etch
Jane Chang
Lithography
Andy Neureuther
Design- Manufacturing Interface
Puneet Gupta
IMPACT • 13
Research Theme A – Litho
Objective Invent a range of approximate-but-fast models based on first principles for assessing manufacturing realities upstream in the design flow
Key Projects
Simulation of electromagnetic effects of mask edgesCompact models for through-focus modelingProcess parameter specific electrical devices and circuitsLitho-aware decomposition for double patterning
IMPACT • 14
Litho – Team
Faculty: Neureuther, Spanos, Poolla
Students: 7 Graduate students (some on partial support)
Juliet (Holwill)Rubinstein
Lynn Wang Eric ChinMarshal Miller
Interconnect Delay
Lateral Int. RO Circuits
Mask EM Effects DP & E- Test
Dan Ceperley
IMPACT • 15
Litho: Through-Focus fast-CAD
Imy CEIImy CEI
RealReal
0.5um Separation
PMF: 0.257
Zernike.txt
IFT
PatternMatcher
SPLAT
MaskLayout
Pattern(coma)
MatchLocation(s)
Aerial Image Simulator
Zernike.txt
IFT
PatternMatcher
SPLAT
MaskLayout
Pattern(coma)
MatchLocation(s)
Aerial Image Simulator
Defocus Spherical HO Spherical
(λ/NA) (λ/NA)(λ/NA)
(λ/NA) (λ/NA)
Coma HO Coma
Mask phases• yellow = 0°• green = 90°• red = 180°
Aberrations Polarization
Line End Shortening, with 2 line surround
0
20
40
60
80
100
120
140
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
Focus, waves RMS
LES
(nm
) Dark Trim
90 Degree Trim
270 Degree Trim
Clear Trim
Att-mask 90o
edge effects
Pattern matching
Compact model though focus
Standard Cell Interactions
2D Lateral Weight DRC
Lateral Influence Functions
IMPACT • 16
CD shift with Defocus (OPC)
-1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
0 200 400 600 800 1000
pitch (nm)
CD
shi
ft fr
om n
omin
al (n
m)
20nm
40nm
60nm
80nm
Focus Sensitive Pitch
Focus Insensitive Pitch
Litho: Electrical Test Patterns & Circuits
Collaborative Platformfor DFM
Collaborative Platformfor DFM
Circuit Simulation
Transistor Modeling Process Simulation
Circuit Simulation
Transistor Modeling Process Simulation
65nm Testchips
Simulation
Parametric Yield Simulator
Solutions across disciplines rather than within disciplines
Cypress Poly Block
Cypress DDLI Block
Metal Active Contact
Corner Poly
Center Poly
Cypress Poly Block
Cypress DDLI Block
Metrology
Quasar OPC Poly
Annular OPC Poly
Cypress Poly Block
Cypress DDLI Block
Metal Active Contact
Corner Poly
Center Poly
Cypress Poly Block
Cypress DDLI Block
Metrology
Quasar OPC Poly
Annular OPC PolyDuPont
Mask
Cypress Wafer Fab. ON
ONONON
ON
Drain 1 Drain 2
Source 1 Source 2
Collaborative Platform for DfM
On-Line Database Sim/ExpScreening for Focus
Sensitive Candidates Focus Test Patterns
Multi-Student Test MasksNovel Leakage Testing
=+
Contact Pad Thin line of conductive material
Open circuit created when aberration present
Defocus = 0.02 Defocus = 0.2Defocus = 0.0 Defocus = 0.02 Defocus = 0.2Defocus = 0.0
IMPACT • 17
Research Theme B – DMI
Objective Increase design predictability, decrease manufacturing cost and yield ramp time
Leverage unexplored interactions between design and manufacturing
Build design-usable models of process and use them to analyze/optimize design
Key Projects
Variation modeling in BSIM compact modelsLeakage modeling, monitoring and optimization in
presence of variabilityImpact of variations on power of mixed-signal circuitsModeling and optimizing for pattern-dependent variations
in standard cell designsDesign-aware mask inspectionComprehensive chip-scale variability modeling
IMPACT • 18
DMI – Team
Students– UCB: Kedar Patel, Yu Ben, Kun Qian, John Crossley + 1 TBD– UCLA: 2 TBD– UCSD: 1 TBD
Faculty– Puneet Gupta (UCLA)– Costas Spanos (UCB)– Elad Alon (UCB)– Chenming Hu (UCB)– Andrew Kahng (UCSD)– Kameshwar Poolla (UCB)
IMPACT • 19
DMI:Non-Rectangular Gate ModelingThree components– Poly gate imperfections: well-studied (SPIE’05)– Active rounding: first publication (ASPDAC’08)– Line-end shortening: first publication (DAC’07)– Line-end tapering: under progress (PMJ’08)
Key elements– Equivalent length/width models– Separate modeling for Ion and Ioff– Takes narrow-width effect into account– Modeling for overlay distributions
nominal w/ diffusion rounding delta (%)
leakage (nW) 138.69 83.49 39.8
clk→q(ps)
fall 70.57 68.54 2.9
rise 76.07 74.07 2.6
setup time (ps)
fall 20.43 18.08 11.5
rise 42.71 35.01 18.0
Case Study: DFF
IMPACT • 20
Research Theme C – Plasma
Objective Couple models at various scales to understand plasma- surface interaction and predict profile evolution
Key Projects
Develop fast algorithms to determine energy and angular distributions of all plasma species
Develop fundamental models for plasma-surface interactions
Develop predictable profile simulator for etch and deposition processes
IMPACT • 21
Plasma – Team
Students/Post-docs – Alan Wu– Monica Titus– John Hoang– Postdocs: TBD
Faculty– Jane Chang– David Lieberman– David Graves Sponsors
Lieberman(Theory, PIC-MCC)
Graves(“Beam”
and MD)Surface-scale experiments
Chang(Fluid and DSMC)Feature-scale experiments
Electron energy
deposition
Plasma species energy and angular
distributions
Ion and neutral fluxes
Molecular dynamics
Feature level profile evolution and control
IMPACT • 22
Plasma: Surface & Feature Scale ModelsParticle-in-cell, Monte Carlo collision (PIC-MCC)
Molecular dynamics (MD) simulations and beam experiments
Monte Carlo feature scale model coupling with reactor model
Couple models at various scales to understand plasma-surface interaction and predict profile evolution
Energy and angle of all species
100 nm
100 nm
100 nm
Low DCLow Wb
High DCLow Wb
Low DCHigh Wb2 nm hole in Si etched with 200 eV CF2
+
Resist etched by 150 eV Ar+; VUV; at 100C~ 1000 nm
Energy (eV) Energy (eV)Energy (eV)
10 mTorr 500 mTorr80 mTorr
Neutral energy distributions
Ion and hot electron density
Fundamental surface reactions
Origin of surface evolution
RF
ESC
Z
IMPACT • 23
Plasma: Research Integration
X. Hua, et. al, J. vac. Sci. Technol. B 24, 1850 (2006)
193nm PR
248nm PR
LER issue for 193nm PR
Ion Angular and EnergyDistribution (Particle in Cell modeling: M. Lieberman)
Species Distribution (Reactor-Scale Modeling: (D. Graves and J. Chang)
Photoresist Reaction Mechanism (Beam Experiments: D. Graves)
Profile Evolution (Feature Scale Modeling: J. Chang)
• Define testbeds for research integration (LER, Gate Stack Etch, PVD ….. etc.)
++
++
n
nn
n
IMPACT • 24
Research Theme D – CMP
•
Objective Identify key influences of chemical and mechanical activity including the coupling” of CMP/polishing
Develop an integrated model of CMP material removal Verify model thru simulation and test, as a platform for model
based process optimizationKey Projects
Determine fundamental mechanics of the electro-chemical removal of material
Comprehensive model of CMP material removal (including pattern dependency, prior deposition processes, material inducedvariations etc)
Establish mechanical elements of CMP material removal via FEM (incl: pad, abrasive/slurry/device/surface interaction) Understand effects of slurry chemistry on abrasive agglomeration/dispersion and material nano-hardness Investigate material removal at nanoscale
IMPACT • 25
CMP – Team
Students– Shantanu Tripathi, UCB (ME/MSE)– Seungchoun Choi, UCB (ME/MSE)– Huaming Xu, UCB (ME)– Moneer Helu, UCB, (ME, NSF support)– Adrien Monvoison, UCB (ME)– Robin Ihnfeldt, UCSD, (Chem Eng)
Faculty– Dave Dornfeld – Fiona Doyle– Jan Talbot– Kyriakos Komvopoulos
IMPACT • 26
Pad/Wafer (~m)
Die (~cm)
Asperity (~µm)
Feature (45nm-10µm)
Abrasive contact (10nm)
Summary of Current ProgressIntegrated chemo-mechanical modeling
of material removalData structure for capturing
multiscale behavior: tree based multi-resolution meshes
Pattern Evolution Model for HDPCVD STI
Pattern density
Chip Layout
Evolution
IMPACT • 27
Research Theme E – Novel Technologies
Objective Investigate advanced device designs, materials, and processes to enhance and reduce variability in bulk MOSFET performance
Develop prediction and abatement methods for systematic variations due to lithography, CMP, and etch processes
Key Projects
Advanced bulk MOSFET design (King Liu) 3-D strain engineering (Cheung)Diffusion in hetero-structures (Haller)Scatterometry-based parameter extraction for calibration
of OPC, CMP, and etch processes (Spanos)Optical metrology for in-situ process monitoring (Spanos)
IMPACT • 28
Novel Technologies – Team
Students– Changhwan Shin– Xin Sun– Chris Liao – John Gerling– …
Faculty– Tsu-Jae King – Eugene Haller– Nathan Cheung– Costas Spanos– Chenming Hu
IMPACT • 29
Segmented Bulk MOSFET for Reduced Variability
A multi-gate structure provides for improved control of short- and narrow-channel effects, and reduces STI-induced stress effects.Steep retrograde channel doping reduces VT variation due to SDF.The segmented bulk MOSFET combines these features to reduce variability in performance, while retaining compatibility with strained-Si, high-k/metal gate & active body biasing technologies.
29
•Continuum doping ID
-VG
DR
AIN
CU
RR
ENT
[A/2
0nm
]
30
20
10
σVT = 27.1 mV
•Continuum doping ID
-VG
σVT = 10.1 mVSegmented Bulk MOSFETPlanar Bulk MOSFET
30
20
10D
RA
IN C
UR
REN
T [A
/ 20n
m]
DR
AIN
CU
RR
ENT
[μA
/20n
m]
DR
AIN
CU
RR
ENT
[μA
/20n
m]
C. Shin et al. (UC Berkeley), to be published
100 atomisticsimulations
LG
= 20nm
EOT = 0.9nm
VDS
= 1V
IMPACT • 30
Agenda
12:30-12:55 Overview 12:55-3:00 Faculty Overview Presentations3:00-4:00 Student Poster Discussion (Refreshments) 4:30-4:45 Q&A for Steering Committee4:45-5:45 Steering Committee Meeting5:45-6:15 Feedback from Steering Committee
