2
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6000 6100 6200 6300 64000.8
0.9
1.0
1.1
1.2
1.3
1.4
Photon energy / eV
6000 6500 7000 7500
0.0
0.5
1.0
1.5
Photon energy / eV
X (SAGA LS/BL06)
M2M1
X
1.9 keV5 mrad
Si (111)
2.1 23 keV PtRh
2 1010 photons/s(300 mA, 6.5 keV (M1 ))
25
4 FSBLSPring 8/BL03XU J Parc
CrX SDD( )
XAFS S/NSDD
PILATUS3 1msIP( )
4 SDD X
PILATUS3 SAXS
PFY, Step,25 min
Cr K edge
IP
PILATUS3
H25 29
• X PILATUS3 300K (Dectris)• 4 SDD (UK SGXSensortech• Mercury 4 (XIA)• UN 800L (UNICO)• 16CH CT16 01E ( )• (FPGA) NEMBox NDL8 T (WIENER)
NEMBox
IP 300 300 mm2
Pilatus 83.8 106.5 mm2
Pixel sizeIP 100 100 m2
Pilatus 172 172 m2, 300 sec, 1160 mm, : 1.3806 Å
•
•••
SAXS
X 9000 eV100 sec
Pilatus
816 8580 6 1TEL/FAX 092 583 7643
Email: [email protected] u.ac.jp: www.rcsla.kyushu u.ac.jp/
X(SAXS : Small Angle X ray Scattering)
: (Rigaku R AXIS IV++, IP),CMOS (Hamamatsu Photonics, FP)
(L) : 0.2, 0.5, 1.0, 1.5, 2.0, 2.5 m
X
X SAXS X nm
CMOSSAXS WAXS
X XAFS
X(XAFS : X ray Absorption Fine Structure)
SR
sample
Detector (IP)SAXS
qx
qy
Detector (FP)WAXS
RT - 800 C -25 - 150 C -25 - 150 C RT
H2, O2, CO, CH4, SOx, NOx - -
In-situ in-situ - -
(<4.0 keV) He He
• :• :• : SDD• : Step scan, Quick scan• He• Q MASS ( 25 150 C)
SDD
He
SAXS
sample
0.0 0.5 1.0 1.5 2.0 2.50.01
0.1
1
10
100
Inte
nsity
/ cp
s
q / nm-1
R-AXIS Pilatus
Cr K : 5.9 keV
Cr K : 5.4 keV
Ar K : 2.9 keV
t (N
orm
aliz
ed)
2000 3000 4000 5000 6000 7000 8000 9000 10000100
101
102
103
104
105
Inte
nsity
/ C
ount
s
Photon energy / eV
4SDD (1CH ) 1SDD
1 2 3 4 5 6 7 8 9 10 110.0
0.2
0.4
0.6
0.8
1.0
•••••
••
••••••••
•••••••
•••••
2.5 keV1.8 keV
2.8 keV1.9 keV
3.0 keV2.1 keV
1182.87 mm120 sec
PILATUS300K
3.5 keV2.4 keV
Tender X ray SAXS
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