+ All Categories
Home > Documents > V FB = 1/q ( G - S )

V FB = 1/q ( G - S )

Date post: 31-Dec-2015
Category:
Upload: virginia-hutchinson
View: 38 times
Download: 2 times
Share this document with a friend
Description:
V FB = 1/q (  G -  S ). (includes semiconductor and oxide components). (position of the Fermi level). (the amount of “band bending”). -. -. -. V FB = - V bi. EC (intrinsic). D Eg. EF. available impurity band states. filled impurity band states. EC (degenerate) ~ ED. - PowerPoint PPT Presentation
Popular Tags:
28
V FB = 1/q ( G - S )
Transcript
Page 1: V FB  = 1/q (  G -   S )

VFB = 1/q (G- S)

Page 2: V FB  = 1/q (  G -   S )

- - -

VFB= - Vbi

(the amount of “band bending”)

(position of the Fermi level)

(includes semiconductorand oxide components)

Page 3: V FB  = 1/q (  G -   S )
Page 4: V FB  = 1/q (  G -   S )
Page 5: V FB  = 1/q (  G -   S )
Page 6: V FB  = 1/q (  G -   S )
Page 7: V FB  = 1/q (  G -   S )
Page 8: V FB  = 1/q (  G -   S )
Page 9: V FB  = 1/q (  G -   S )
Page 10: V FB  = 1/q (  G -   S )
Page 11: V FB  = 1/q (  G -   S )
Page 12: V FB  = 1/q (  G -   S )

Degenerate Semiconductors

As the doping conc. increases more, EF rises above EC

EV

EC (intrinsic)available impurity band states EFEg

EC (degenerate) ~ EDfilled impurity band states

apparent band gap narrowing:Eg* (is optically measured)

-

Eg* is the apparent band gap: an electron must gain energy Eg* = EF-EV

Page 13: V FB  = 1/q (  G -   S )
Page 14: V FB  = 1/q (  G -   S )
Page 15: V FB  = 1/q (  G -   S )

Quantum Effectson Threshold Voltage

Page 16: V FB  = 1/q (  G -   S )
Page 17: V FB  = 1/q (  G -   S )
Page 18: V FB  = 1/q (  G -   S )
Page 19: V FB  = 1/q (  G -   S )
Page 20: V FB  = 1/q (  G -   S )
Page 21: V FB  = 1/q (  G -   S )
Page 22: V FB  = 1/q (  G -   S )
Page 23: V FB  = 1/q (  G -   S )
Page 24: V FB  = 1/q (  G -   S )
Page 25: V FB  = 1/q (  G -   S )
Page 26: V FB  = 1/q (  G -   S )
Page 27: V FB  = 1/q (  G -   S )
Page 28: V FB  = 1/q (  G -   S )

Recommended