Supporting information
Large piezoelectric coefficient and ferroelectric nanodomain switching in
Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin films A. Jalalian1,2, A. M. Grishin2, X.L. Wang1*, Z.X. Cheng1and S. X. Dou1*
1Institute for Superconducting and Electronic Materials, Faculty of Engineering, Australian
Institute for Innovative Materials, University of Wollongong, North Wollongong, NSW 2522,
Australia
2 Department of Condensed Matter Physics, KTH Royal Institute of Technology, SE-164 40
Stockholm-Kista, Sweden.
Sample fabrication procedure
Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanostructures in the forms of thin films and nanofibers
were fabricated using spin-coating and electrospinning techniques, respectively. In order to
prepare the BTZ-0.5BCT precursor solution, barium acetate, calcium acetate monohydrate,
titanium butoxide, and zirconium (IV) propoxide were used as starting materials. Barium acetate
and calcium acetate monohydrate were dissolved in glacial acetic acid at 80°C for 1 hour and
cooled down to room temperature. Titanium butoxide and zirconium propoxide were chelated by
acetyl acetone and added to the Ba and Ca solution. 2-methoxyethanol was used to adjust the
concentration of the BTZ-0.5BCT precursor solution to 0.2 M. Spin-coating at 3000 rpm for 30
seconds was carried out to prepare the BTZ-0.5BCT thin film on Si and Si/SiO2/Ti/Ir substrates.
The spin-coated thin films were dried and annealed at 100°C and 600°C for 10 minutes,
respectively, and the above procedure was repeated for 4 cycles until the films reached a
thickness of about 200 nm, followed by calcination at 700°C for 1 hour in air. Nanofibers were
fabricated by adding 0.045 g/ml polyvinylpyrrolidone (PVP, MW = 1,300,000) to the precursor
solution and using the electrospinning technique under a 1.2 kV/cm DC electric field. The
nanofibers were collected on the same substrate used for the thin film and annealed at 700°C for
1 hour in air, under similar conditions as for the thin film.
FIG S1. FE-SEM image of the BTZ-0.5BCT thin film deposited on the Si/SiO2/Ti/Ir substrate
and annealed at 700°C for 1 hour in air. Inset: magnified view of the thin film surface.
FIG S2. X-ray diffraction patterns of the bulk sample used for Raman spectroscopy and of the
nanofibers annealed at 700°C.
FIG S3. Low magnification TEM image obtained from the nanofiber heat treated at 700° C
containing randomly oriented particles, and inset selected area electron diffraction pattern reveals
the polycrystalline structure of the nanofiber.
FIG S4. Energy dispersive x-ray spectroscopy (EDS) of the BTZ-0.5BCT nanofibers annealed at
700°C.
FIG S5. Raman spectra of the BTZ-0.5BCT bulk sample synthesized by solid state reaction at
1450°C for 1 hour. All peaks assigned to the polar structures of the BaTiO3 have appeared.
FIG S6. Force-distance curve recorded from the surface of a silicon substrate using the
cantilever employed in our PFM measurements. This plot was used for the optical sensitivity
calibration of the cantilever used in the PFM measurements.
The deflection of the cantilever created by the surface deformation of the piezoelectric material
is detected by a photodiode. The output voltage from the photodiode due to the displacement of
the LASER beam reflected from the cantilever surface represents the cantilever deflection.
Therefore an accurate calibration of the deflection sensitivity of the cantilever is essential in
PFM measurements. This calibration is conducted by acquiring a cantilever deflection in volts
versus piezo displacement in microns collected from a force-distance curve measurement. In our
calibration procedure, a silicon substrate was selected to provide a hard surface that could not be
indented by the tip in the calibration procedure. The deflection sensitivity of the cantilever was
obtained from the inversion of the slop of the deflection vs. piezo displacement in the linear part
of the repulsive region ( blue line). According to the calibration procedure, the sensitivity of the
cantilever used in our PFM measurements was 73.6 nm/V. Due to the dependency of this value
to the LAZER position on the lever, the LASER alignment was kept un-changed during the
measurement.