Masanori INOUE, Humiaki KIRIHATA, Takashi KOBAYASHI,Naomi IKEDA*), and Satoshi KUBOYAMA*)
Fuji Electric Device Technology Co., Ltd.*) JAXA
“Step Forward, Raise Value”
Development of n-ch Power MOSFETs (100V to 500V Class)
for Space Applications
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Outline
■ Roadmap and Fuji’s Rad-Hard Power MOSFETs■ Performance: Ron, TID, SEE-SOA■ Futures of QT and QCI■ Main Characteristics of SMD and TO-254 Products■ Development Plan of New Products■ Conclusions
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20122010 20112009200820072005
-062003
-042001
-021990’s
Roadmap of Fuji’s Power MOSFETs
1st Gen. MOS (500V, 250V)
BJT
1992
1998
SMD-PKG Series (100,130, 200,250, 500V)
Production
Development
▲ ‘08 for Domestic
▲ ‘09 for Oversea
QML Parts
TO-254 PKG Series (100,130, 200,250, 500V)
2nd Gen. MOS Technology
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Photographs of Fuji’s Power MOSFETs
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PerformanceRon: Fuji’s 2nd Generation MOSFET TechnologyOn-sate Resistance
The Ron shows the top-class performance in the world.
100 150 200 250 300 3500
50
100
100V MOS
200V MOS
250V MOS
Silicon Limit
General
Purpose MOS1st G
en Rad-H
ard
2nd Gen Rad-Hard
Nor
mal
ized
RD
S(o
n)
BVDSS [V]
250V MOS
Fuji’s Rad-Hard Power MOSFETtechnology was presented at the17th MEWS, 2004.
0.18Ω/ 500V device38mΩ/ 250V device26mΩ/ 200V device17mΩ/ 130V device13mΩ/ 100V device.
BVDSS dependence of RDS(on)
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TIDTotal Ionizing Dose
Source: Co60 gamma-rayDose: 1000 Gy(1000Gy/hr), 3000 Gy(3000Gy/hr), 6000 Gy(3000Gy/hr)Bias Conditions (During and after irradiation)
(a) VDS=0V, VGS=20 V (b) VDS=0V, VGS=-20 V (c) VDS=200V, VGS=0VTest Sample: JAXA R 2SK4158 (250V)
0 5000 10000150
200
250
300
BV
dss
(V)
@Id
=1m
A
Total Dose(Gy)
BIAS (a):VGS=+20V (b):VGS=-20V (c):VDS=200V
0 5000 10000-2
-1
0
1
2
3
4
5
Vgs
(th)(
V)
@Id
=1m
A, V
ds=
5V
Total Dose(Gy)
BIAS (a):VGS=+20V (b):VGS=-20V (c):VDS=200V
Total dose dependence of BVDSS Total dose dependence of VGS(th)
The TID shows the good performance over 1000Gy (100kRad).
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SEE-SOA (SEB/SEGR)Single Event Effect – Safe Operating AreaSingle Event Burnout / Single Event Gate Rupture
0
50
100
150
200
250
300
-25-20-15-10-50VGS (V)
VDS (
V)LET: 40.1MeV/(mg/cm2)Ion: 89YEnergy: 928 MeVRange: 102μmTA=25+/-5oCFluence: 3E5+/- 5% ions/cm2
Irradiation angle: Perpendicular to die surfaceTest Sample: JAXA R 2SK4158 (250V)
The SEE-SOA shows the good performance up to LET=40.1MeV/(mg/cm2).
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Available Fuji’s Rad Hard MOSFETs
SMD-0.5130V/89mΩ2SK4154TO-254130V/96mΩ2SK4216SMD-1130V/39mΩ2SK4153TO-254130V/46mΩ2SK4215SMD-2130V/17mΩ2SK4152TO-254130V/24mΩ2SK4214
TO-254TO-254TO-254
500V/1.15Ω
500V/0.48Ω
500V/0.18Ω
2SK41872SK4186
SMD-0.5500V/1.15Ω2SK4190SMD-1500V/0.48Ω2SK4189SMD-2500V/0.18Ω2SK41882SK4185
SMD-0.5250V/223mΩ2SK4160TO-254250V/230mΩ2SK4056SMD-1SMD-2
SMD-0.5SMD-1SMD-2
SMD-0.5SMD-1SMD-2
Package
250V/91mΩ
250V/38mΩ
200V/148mΩ
200V/62mΩ
200V/26mΩ
100V/64mΩ
100V/28mΩ
100V/13mΩ
SpecPart No. JAXA R
PackageSpecPart No.
JAXA R
2SK4159TO-254250V/98mΩ2SK40552SK4158 TO-254250V/45mΩ2SK40542SK4157TO-254200V/155mΩ2SK40532SK4156TO-254200V/69mΩ2SK40522SK4155TO-254200V/33mΩ2SK4051
2SK4219TO-254100V/69mΩ2SK40502SK4218TO-254100V/33mΩ2SK4049
TO-254100V/18mΩ 2SK42172SK4048
SMD SeriesTO-254 SeriesThe JAXA General Spec.
JAXA-QTS-2030C
The JAXA Detail Spec.
JAXA-QTS-2030/101A
JAXA-QTS-2030/102
JAXA-QTS-2030/103
The JAXA Appl. Data Sheet
JAXA-ADS-2030/101A
JAXA-ADS-2030/102
JAXA-ADA-2030/103
Applicable Documents
Features of QT and QCI in JAXA-QTS-2030
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QTQualification Test
QT♦The QT in accordance with the JAXA-QTS-2030/101A*), 102, and 103 had been successfully performed by FDT and certified by JAXA. And the devices were listed in the QML on May 2008.
Correspondence with the MIL-PRF-19500N♦ The QT specified in the JAXA-QTS-2030/102 and 103 is comprised of the same test items specified in the MIL-PRF-19500N.
*) NoteThe JAXA-QTS-2030/101A is re-certified, based on the QT test results of the same dice used in the JAXA-QTS-2030/102 and the same TO-254 package used in the JAXA-QTS-2030/103.
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Sample selection for QCI♦ The dice of higher rated voltage and larger size in one wafer lot are selected for QCI to represent the wafer lot.
Omission of QCI items♦When the devices built with the representative dice passed the QCI items, it is regarded that the devices with the lower rated voltage and smaller size dice in the wafer lot passed all or a part of the QCI items.♦ The detailed criteria for the omission is shown in the JAXA Specifications: JAXA-QTS-2030/101A, 102, and 103.
These features come from the wafer lot consisting of dice with various voltage ratings and sizes designed with the same rule.
QCIQuality Conformance Inspection
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Wafer Lot
Schematic representation of the wafer lot for the die family
A large number of unit block consisting of 1/1, 1/2, and 1/4 size dice are arranged on one wafer.
250V 200V 130V 100V
Unit Block
♦ One wafer lot consists of 1 to 4 rated voltage types of Si wafer and three kinds of die size (1/1, 1/2, and 1/4 sizes).
♦ The same fabrication process, the same photo-mask, and the same die design are applied to the 100V, 130V, 200V, and 250V dice.
♦ In the wafer process, the difference is only Si epi-crystal specifications for each rated voltage.
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Fuji’s Rad-Hard Power MOSFET SeriesSMD-0.5SMD-1SMD-2
2SK4190
2SK41542SK41572SK41602SK4219
2SK4189
2SK41532SK41562SK41592SK4218
2SK4188
2SK41522SK41552SK41582SK4217
2SK41871/4 size
2SK41861/2 size
2SK40502SK40532SK40562SK4216
1/4 size
2SK40492SK40522SK40552SK4215
1/2 size
1/1 size
1/1 size
2SK4185
500V
2SK40482SK40512SK40542SK4214
TO-254
100V130V200V250V
Packages
Die Sizes
VoltageRatings
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Type
JAXA R _
VDSS
V
ID
A
RDS(on)Max.*1
Ω
PD *2
W
VGS
V
VGS(th)
V
QgMax.nC
RadiationLevel krad
PKG Spec. No
JAXA-QTS-20
2SK4217 100 42 0.013 250 ±20 2.5-4.5 220 100 SMD-2 102
2SK4218 100 42 0.028 150 ±20 2.5-4.5 100 100 SMD-1 102
2SK4219 100 15 0.064 70 ±20 2.5-4.5 50 100 SMD-0.5 102
2SK4152 130 42 0.017 250 ±20 2.5-4.5 220 100 SMD-2 102
2SK4153 130 39 0.039 150 ±20 2.5-4.5 100 100 SMD-1 102
2SK4154 130 15 0.089 70 ±20 2.5-4.5 50 100 SMD-0.5 102
2SK4155 200 42 0.026 250 ±20 2.5-4.5 220 100 SMD-2 102
2SK4156 200 32 0.062 150 ±20 2.5-4.5 100 100 SMD-1 102
2SK4157 200 14 0.148 70 ±20 2.5-4.5 50 100 SMD-0.5 102
2SK4158 250 42 0.038 250 ±20 2.5-4.5 220 100 SMD-2 102
2SK4159 250 26 0.091 150 ±20 2.5-4.5 100 100 SMD-1 102
2SK4160 250 12 0.223 70 ±20 2.5-4.5 50 100 SMD-0.5 102
2SK4188 500 23 0.18 250 ±20 2.5-4.5 300 100 SMD-2 103
2SK4189 500 10 0.48 150 ±20 2.5-4.5 120 100 SMD-1 103
2SK4190 500 4.5 1.15 70 ±20 2.5-4.5 48 100 SMD-0.5 103
*1RDS(on): VGS=12V, *2 PD: TC=25oC
SMDSMD PackagePackage
Main Characteristics of SMD Products
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Type
JAXA R _
VDSS
V
ID
A
RDS(on)Max.*1
Ω
PD *2
W
VGS
V
VGS(th)
V
QgMax.nC
RadiationLevel krad
PKG Spec. No
JAXA-QTS-20
2SK4048 100 42 0.018 250 ±20 2.5-4.5 220 100 TO-254 101A
2SK4049 100 42 0.033 125 ±20 2.5-4.5 100 100 TO-254 101A
2SK4050 100 15 0.069 62.5 ±20 2.5-4.5 50 100 TO-254 101A
2SK4214 130 42 0.024 250 ±20 2.5-4.5 220 100 TO-254 101A
2SK4215 130 35 0.046 125 ±20 2.5-4.5 100 100 TO-254 101A
2SK4216 130 15 0.096 62.5 ±20 2.5-4.5 50 100 TO-254 101A
2SK4051 200 42 0.033 250 ±20 2.5-4.5 220 100 TO-254 101A
2SK4052 200 33 0.069 125 ±20 2.5-4.5 100 100 TO-254 101A
2SK4053 200 14 0.155 62.5 ±20 2.5-4.5 50 100 TO-254 101A
2SK4054 250 42 0.045 250 ±20 2.5-4.5 220 100 TO-254 101A
2SK4055 250 27 0.098 125 ±20 2.5-4.5 100 100 TO-254 101A
2SK4056 250 12 0.230 62.5 ±20 2.5-4.5 50 100 TO-254 101A
2SK4185 500 23 0.18 250 ±20 2.5-4.5 300 100 TO-254 103
2SK4186 500 10 0.48 125 ±20 2.5-4.5 120 100 TO-254 103
2SK4187 500 4.5 1.15 60 ±20 2.5-4.5 48 100 TO-254 103
*1RDS(on): VGS=12V, *2 PD: TC=25oC
TOTO--254254 PackagePackage
Main Characteristics of TO-254 Products
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201320122010 2011200920082007
Control IC and 30V MOSFET for POL
p-ch Power MOSFETs
Lower Voltage Rating and Lower Ron
QT
Development Plan of New Products
QTn-ch Power MOSFETs
Production
Development
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Conclusions
♦ We have developed the rad-hard and low Ron power MOSFETs in the rated voltage range of 100V to 500V. Some of products are now supplied for domestic and oversea customers.
♦ These space use MOSFETs are qualified in accordance with the JAXA-QTS-2030/101A, 102, and 103. The QT also fulfill the MIL-PRF-19500N.
♦ We are just developing a n-ch MOSFET of voltage rating lower than 100V and also will start to develop p-ch MOSFETs in this year.
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Thank you very much!
Matsumoto CastleMatsumoto, Nagano Pref.