Masanori INOUE, Humiaki KIRIHATA, Takashi KOBAYASHI,Naomi IKEDA*), and Satoshi KUBOYAMA*)

Fuji Electric Device Technology Co., Ltd.*) JAXA

“Step Forward, Raise Value”

Development of n-ch Power MOSFETs (100V to 500V Class)

for Space Applications

2

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Outline

■ Roadmap and Fuji’s Rad-Hard Power MOSFETs■ Performance: Ron, TID, SEE-SOA■ Futures of QT and QCI■ Main Characteristics of SMD and TO-254 Products■ Development Plan of New Products■ Conclusions

3

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

20122010 20112009200820072005

-062003

-042001

-021990’s

Roadmap of Fuji’s Power MOSFETs

1st Gen. MOS (500V, 250V)

BJT

1992

1998

SMD-PKG Series (100,130, 200,250, 500V)

Production

Development

▲ ‘08 for Domestic

▲ ‘09 for Oversea

QML Parts

TO-254 PKG Series (100,130, 200,250, 500V)

2nd Gen. MOS Technology

4

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Photographs of Fuji’s Power MOSFETs

5

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

PerformanceRon: Fuji’s 2nd Generation MOSFET TechnologyOn-sate Resistance

The Ron shows the top-class performance in the world.

100 150 200 250 300 3500

50

100

100V MOS

200V MOS

250V MOS

Silicon Limit

General

Purpose MOS1st G

en Rad-H

ard

2nd Gen Rad-Hard

Nor

mal

ized

RD

S(o

n)

BVDSS [V]

250V MOS

Fuji’s Rad-Hard Power MOSFETtechnology was presented at the17th MEWS, 2004.

0.18Ω/ 500V device38mΩ/ 250V device26mΩ/ 200V device17mΩ/ 130V device13mΩ/ 100V device.

BVDSS dependence of RDS(on)

6

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

TIDTotal Ionizing Dose

Source: Co60 gamma-rayDose: 1000 Gy(1000Gy/hr), 3000 Gy(3000Gy/hr), 6000 Gy(3000Gy/hr)Bias Conditions (During and after irradiation)

(a) VDS=0V, VGS=20 V (b) VDS=0V, VGS=-20 V (c) VDS=200V, VGS=0VTest Sample: JAXA R 2SK4158 (250V)

0 5000 10000150

200

250

300

BV

dss

(V)

@Id

=1m

A

Total Dose(Gy)

BIAS (a):VGS=+20V (b):VGS=-20V (c):VDS=200V

0 5000 10000-2

-1

0

1

2

3

4

5

Vgs

(th)(

V)

@Id

=1m

A, V

ds=

5V

Total Dose(Gy)

BIAS (a):VGS=+20V (b):VGS=-20V (c):VDS=200V

Total dose dependence of BVDSS Total dose dependence of VGS(th)

The TID shows the good performance over 1000Gy (100kRad).

7

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

SEE-SOA (SEB/SEGR)Single Event Effect – Safe Operating AreaSingle Event Burnout / Single Event Gate Rupture

0

50

100

150

200

250

300

-25-20-15-10-50VGS (V)

VDS (

V)LET: 40.1MeV/(mg/cm2)Ion: 89YEnergy: 928 MeVRange: 102μmTA=25+/-5oCFluence: 3E5+/- 5% ions/cm2

Irradiation angle: Perpendicular to die surfaceTest Sample: JAXA R 2SK4158 (250V)

The SEE-SOA shows the good performance up to LET=40.1MeV/(mg/cm2).

8

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Available Fuji’s Rad Hard MOSFETs

SMD-0.5130V/89mΩ2SK4154TO-254130V/96mΩ2SK4216SMD-1130V/39mΩ2SK4153TO-254130V/46mΩ2SK4215SMD-2130V/17mΩ2SK4152TO-254130V/24mΩ2SK4214

TO-254TO-254TO-254

500V/1.15Ω

500V/0.48Ω

500V/0.18Ω

2SK41872SK4186

SMD-0.5500V/1.15Ω2SK4190SMD-1500V/0.48Ω2SK4189SMD-2500V/0.18Ω2SK41882SK4185

SMD-0.5250V/223mΩ2SK4160TO-254250V/230mΩ2SK4056SMD-1SMD-2

SMD-0.5SMD-1SMD-2

SMD-0.5SMD-1SMD-2

Package

250V/91mΩ

250V/38mΩ

200V/148mΩ

200V/62mΩ

200V/26mΩ

100V/64mΩ

100V/28mΩ

100V/13mΩ

SpecPart No. JAXA R

PackageSpecPart No.

JAXA R

2SK4159TO-254250V/98mΩ2SK40552SK4158 TO-254250V/45mΩ2SK40542SK4157TO-254200V/155mΩ2SK40532SK4156TO-254200V/69mΩ2SK40522SK4155TO-254200V/33mΩ2SK4051

2SK4219TO-254100V/69mΩ2SK40502SK4218TO-254100V/33mΩ2SK4049

TO-254100V/18mΩ 2SK42172SK4048

SMD SeriesTO-254 SeriesThe JAXA General Spec.

JAXA-QTS-2030C

The JAXA Detail Spec.

JAXA-QTS-2030/101A

JAXA-QTS-2030/102

JAXA-QTS-2030/103

The JAXA Appl. Data Sheet

JAXA-ADS-2030/101A

JAXA-ADS-2030/102

JAXA-ADA-2030/103

Applicable Documents

Features of QT and QCI in JAXA-QTS-2030

9

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

QTQualification Test

QT♦The QT in accordance with the JAXA-QTS-2030/101A*), 102, and 103 had been successfully performed by FDT and certified by JAXA. And the devices were listed in the QML on May 2008.

Correspondence with the MIL-PRF-19500N♦ The QT specified in the JAXA-QTS-2030/102 and 103 is comprised of the same test items specified in the MIL-PRF-19500N.

*) NoteThe JAXA-QTS-2030/101A is re-certified, based on the QT test results of the same dice used in the JAXA-QTS-2030/102 and the same TO-254 package used in the JAXA-QTS-2030/103.

10

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Sample selection for QCI♦ The dice of higher rated voltage and larger size in one wafer lot are selected for QCI to represent the wafer lot.

Omission of QCI items♦When the devices built with the representative dice passed the QCI items, it is regarded that the devices with the lower rated voltage and smaller size dice in the wafer lot passed all or a part of the QCI items.♦ The detailed criteria for the omission is shown in the JAXA Specifications: JAXA-QTS-2030/101A, 102, and 103.

These features come from the wafer lot consisting of dice with various voltage ratings and sizes designed with the same rule.

QCIQuality Conformance Inspection

11

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Wafer Lot

Schematic representation of the wafer lot for the die family

A large number of unit block consisting of 1/1, 1/2, and 1/4 size dice are arranged on one wafer.

250V 200V 130V 100V

Unit Block

♦ One wafer lot consists of 1 to 4 rated voltage types of Si wafer and three kinds of die size (1/1, 1/2, and 1/4 sizes).

♦ The same fabrication process, the same photo-mask, and the same die design are applied to the 100V, 130V, 200V, and 250V dice.

♦ In the wafer process, the difference is only Si epi-crystal specifications for each rated voltage.

12

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Fuji’s Rad-Hard Power MOSFET SeriesSMD-0.5SMD-1SMD-2

2SK4190

2SK41542SK41572SK41602SK4219

2SK4189

2SK41532SK41562SK41592SK4218

2SK4188

2SK41522SK41552SK41582SK4217

2SK41871/4 size

2SK41861/2 size

2SK40502SK40532SK40562SK4216

1/4 size

2SK40492SK40522SK40552SK4215

1/2 size

1/1 size

1/1 size

2SK4185

500V

2SK40482SK40512SK40542SK4214

TO-254

100V130V200V250V

Packages

Die Sizes

VoltageRatings

13

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Type

JAXA R _

VDSS

V

ID

A

RDS(on)Max.*1

Ω

PD ＊２

W

VGS

V

VGS(th)

V

QgMax.nC

RadiationLevel krad

PKG Spec. No

JAXA-QTS-20

2SK4217 100 42 0.013 250 ±20 2.5-4.5 220 100 SMD-2 102

2SK4218 100 42 0.028 150 ±20 2.5-4.5 100 100 SMD-1 102

2SK4219 100 15 0.064 70 ±20 2.5-4.5 50 100 SMD-0.5 102

2SK4152 130 42 0.017 250 ±20 2.5-4.5 220 100 SMD-2 102

2SK4153 130 39 0.039 150 ±20 2.5-4.5 100 100 SMD-1 102

2SK4154 130 15 0.089 70 ±20 2.5-4.5 50 100 SMD-0.5 102

2SK4155 200 42 0.026 250 ±20 2.5-4.5 220 100 SMD-2 102

2SK4156 200 32 0.062 150 ±20 2.5-4.5 100 100 SMD-1 102

2SK4157 200 14 0.148 70 ±20 2.5-4.5 50 100 SMD-0.5 102

2SK4158 250 42 0.038 250 ±20 2.5-4.5 220 100 SMD-2 102

2SK4159 250 26 0.091 150 ±20 2.5-4.5 100 100 SMD-1 102

2SK4160 250 12 0.223 70 ±20 2.5-4.5 50 100 SMD-0.5 102

2SK4188 500 23 0.18 250 ±20 2.5-4.5 300 100 SMD-2 103

2SK4189 500 10 0.48 150 ±20 2.5-4.5 120 100 SMD-1 103

2SK4190 500 4.5 1.15 70 ±20 2.5-4.5 48 100 SMD-0.5 103

*1RDS(on): VGS=12V, *2 PD: TC=25oC

SMDSMD PackagePackage

Main Characteristics of SMD Products

14

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Type

JAXA R _

VDSS

V

ID

A

RDS(on)Max.*1

Ω

PD ＊２

W

VGS

V

VGS(th)

V

QgMax.nC

RadiationLevel krad

PKG Spec. No

JAXA-QTS-20

2SK4048 100 42 0.018 250 ±20 2.5-4.5 220 100 TO-254 101A

2SK4049 100 42 0.033 125 ±20 2.5-4.5 100 100 TO-254 101A

2SK4050 100 15 0.069 62.5 ±20 2.5-4.5 50 100 TO-254 101A

2SK4214 130 42 0.024 250 ±20 2.5-4.5 220 100 TO-254 101A

2SK4215 130 35 0.046 125 ±20 2.5-4.5 100 100 TO-254 101A

2SK4216 130 15 0.096 62.5 ±20 2.5-4.5 50 100 TO-254 101A

2SK4051 200 42 0.033 250 ±20 2.5-4.5 220 100 TO-254 101A

2SK4052 200 33 0.069 125 ±20 2.5-4.5 100 100 TO-254 101A

2SK4053 200 14 0.155 62.5 ±20 2.5-4.5 50 100 TO-254 101A

2SK4054 250 42 0.045 250 ±20 2.5-4.5 220 100 TO-254 101A

2SK4055 250 27 0.098 125 ±20 2.5-4.5 100 100 TO-254 101A

2SK4056 250 12 0.230 62.5 ±20 2.5-4.5 50 100 TO-254 101A

2SK4185 500 23 0.18 250 ±20 2.5-4.5 300 100 TO-254 103

2SK4186 500 10 0.48 125 ±20 2.5-4.5 120 100 TO-254 103

2SK4187 500 4.5 1.15 60 ±20 2.5-4.5 48 100 TO-254 103

*1RDS(on): VGS=12V, *2 PD: TC=25oC

TOTO--254254 PackagePackage

Main Characteristics of TO-254 Products

15

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

201320122010 2011200920082007

Control IC and 30V MOSFET for POL

p-ch Power MOSFETs

Lower Voltage Rating and Lower Ron

QT

Development Plan of New Products

QTn-ch Power MOSFETs

Production

Development

16

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Conclusions

♦ We have developed the rad-hard and low Ron power MOSFETs in the rated voltage range of 100V to 500V. Some of products are now supplied for domestic and oversea customers.

♦ These space use MOSFETs are qualified in accordance with the JAXA-QTS-2030/101A, 102, and 103. The QT also fulfill the MIL-PRF-19500N.

♦ We are just developing a n-ch MOSFET of voltage rating lower than 100V and also will start to develop p-ch MOSFETs in this year.

17

“Step Forward, Raise Value”

THE 21st MICROELECTRONICS WORKSHOP

Thank you very much!

Matsumoto CastleMatsumoto, Nagano Pref.