CYCLONE - CARTRIDGE - ELECTROSTATICSOD mS800 CFM's

DUST - SMOKE - FUME - MISTCOLLECTORS

conditioning means includesmake up means for adding elec­troless plating ingredients to keepthe plating ingredients in the so­lution properly in balance.

CLlANING IUCTIIONIC HAIIDWARtCOMPONINTSu.s. Patent 5,865,902. Feb. 2, 1999B.S. Yam and K.S. CoLbert,assiJ(nors to Church & Dwight Co.Inc., Princeton, N.J.

A blast medium for cleaning elec­tronic hardware comprising wa­ter-soluble alkaline metal saltabrasive particles having a parti­cle size of at least 20 microns butnot more than 300 microns and aMohs hardness of no greater than5.0; a chloride content of no morethan 100 ppm; a chemical oxygen

demand orno more than 100 ppm;and a moisture content of no morethan 0.20% by weight, whereinthe blast medium is free of silicaand organic-containing flow aids.

...GNIITIION SPUnIRINtIAPPARATUSU.S. Patent 5,865,961. Feb. 2, 1999M. Yokoyama et aL., assignors toMatsushita ELectric Industrial Co.Ltd.• Kadoma, Japan

A method of magnetron sputter­ing comprising generating plasmain a vicinity of a plurality of an­nular flat targets; supplying elec­tric power to the targets; and gen­erating magnetic fields that formapproximately parallel to thefront surfaces of the targets andthat have approximately uniform

intensities with the magnets thatare located along the inner andouter circumferential edges of thetargets so as to distribute theplasma approximately uniformly.

~..APPARATUSU.S. Patent 5,865,969. Feb. 2, 1999P.J. Clarke, assignor to SputteredFilms Inc., Santa Barbara, Calif.

An apparatus for providing a con­trolled deposition on a substrateincluding means for providing arotation of the substrate on a par­ticular axis; a pair of anodes dis­posed on opposite sides of the par­ticular axis; a pair of targets eachassociated with an individual oneofthe anodes; means for introduc­ing inert gas; means for applyingan alternating voltage betweeneach individual one of the anodesand the associated one of the tar­gets to establish an electrical fieldfor a flow of electrons; and meansdisposed relative to the anodesand the targets for providing amovement of the electrons be­tween each anode and the associ­ated target through other than astraight line path to enhance theionization of the atoms of the in­ert gas and the emission of thesputtered atoms from such targetfor movement toward the sub­strate.

...GNIT S'IIIUC'IU. POll ... INSPUn'IIII_U.S. Patent 5,865,970. Feb. 2, 1999R.E. SteLter, assignor to PermagCorp., Fremont, CaLif.

A permanent magnet structure ina magnetron utilized in sputterdepositing of a target materialonto a substrate comprising a baseplate; and a central magnet struc­ture having a magnetic field orien­tation substantially parallel to thebase plate and target material.

~~ 1600 Douglas· Kalamazoo, MI· (616) 345·7151

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PLATING MITIIODU.S. Patent 5,865,976. Feb. 2, 1999H. Takeuchi et al., assignors to

Metal Finishing