Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Project: IEEE P802.15 Working Group for Wireless Personal Area Networks
Submission Title: [Silicon Millimeter Wave Integrated Circuits for Wireless Applications]
Date Submitted: [November 15, 2004]Source: [Brian Gaucher] Company [IBM Research]Address [PO 218 Rte 134 MS38-159 Yorktown Heights, NY 10598]Voice: [(914) 945-2596], E-Mail: [[email protected]]Re: [Abstract:[Silicon Millimeter Wave Integrated Circuits for in the 60 GHz band have
been built and tested and demonstrate that a potential low cost path exists that may enable consumer level mmWave wireless applications.]
Purpose: [Contribution to mmW SG3c at November 2004 plenary in San Antonio]Notice: This document has been prepared to assist the IEEE P802.15. It is
offeredas a basis for discussion and is not binding on the contributing individual(s) ororganization(s). The material in this document is subject to change in form and
contentafter further study. The contributor(s) reserve(s) the right to add, amend or
withdrawmaterial contained herein.Release: The contributor acknowledges and accepts that this contribution
becomesthe property of IEEE and may be made publicly available by P802.15.
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Silicon is ready for mmWave frequencies
Millimeter wave applications Applications
Challenges
Lets look at 60 GHz WLAN as an example
Exemplary silicon circuits
Looking at higher frequencies Exemplary circuits (VCOs, LNAs, PA’s…)
And what can we expect silicon mmWave ICs to cost ?
Summary and concluding remarks
Outline
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Evolution of SiGe HBTs
Significant improvement in Ft/Fmax with each generation
1997 1998 1999 2000 2001 2002 2003
CMOS lithography
0.5um3.3v
0.5/0.35um3.3, 5v
0.25um2.5v
0.18um1.8v
0.13um1.2v
LegendHigh Speed NPN Ft /Fmax (MAG)/ BVceoFt/Fmax (Unilateral Gain)
6HP6HP
47/60 GHz/3.3V
7HP
120/100 GHz/1.8V120/125GHz
8HP
200/180GHz/1.7V200/250GHz
5HP
50/50 GHz/3.3V
2004
wireless
Radar (24 GHz Automotive)Wirleline (40 GbpsOC768)
wireless
mmWave
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Increasing speed of silicon technologies
CMOSCMOS
SiGe/Si SiGe/Si BipolarBipolar
III-VIII-V
“…if it can be done in silicon; it will be done in silicon…”
1 & 10 Gbps hardware shipping1st publications targeting 40 Gbps1st publications targeting 60GHzLarge scale integration
10 & 40 Gbps hardware shipping1st designs targeting 80 to100 Gbps1st designs targeting mmWaveMedium scale integration
Focus:on large V swingHigh powerSmall scale integration
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Silicon is ready for mmWave frequencies
Millimeter wave applications Applications
Challenges
Lets look at 60 GHz WLAN as an example
Exemplary silicon circuits
Looking at higher frequencies Exemplary circuits (VCOs, LNAs, PA’s…)
And what can we expect silicon mmWave ICs to cost ?
Summary and concluding remarks
Outline
doc.: IEEE 802.15-04-0665-01-003cNovember 2004
Submission B. Gaucher IBM Research
IEEE Standards Headed Toward 60GHz?
Data rate trend vs. history
0.1
1
10
100
1000
10000
1975 1980 1985 1990 1995 2000 2005 2010
Year
Sp
eed
(M
bp
s)
1Base-T
10Base-T
100Base-T
1000Base-T
10GBase-T
802.11
802.11b
802.11a
802.15.3
Ethernet WLAN WPANUSB
USB1.0
USB1.1
USB2.0
Drivers include: Frequency allocation WW, bandwidth, capacity, power, cost, reliability
BT1.0
BT 2.0
60 GHz
802.11nUWB
802.15.3 has the potential to continue the wireless chase, UWB, 60 GHz
WLAN/WPAN may extend its speed advantage
802.11n is addressing this space
WLAN may go with 60GHz given it has 5GHz of bandwidth, world wide
Not likely to see real 480-1000Mbps HW until >2006.
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Millimeter Wave Applications
802.11x Markets WLAN
WPAN Automotive Radar at 77/79 GHz Telecommunications backhaul Consumer Wireless Last Mile …
Military Markets (38, 60, 94 GHz) Future Combat systems
Secure communications
Satellite Communications
Military phased array markets
Reconfigurable, software definable systems
Integrated WirelessC
om
mer
cial
Mil
itar
yCommercial Apps
Military Apps
doc.: IEEE 802.15-04-0665-01-003cNovember 2004
Submission B. Gaucher IBM Research
High-Speed Wireless Need Driven by Consumer Apps
Consumer electronicsReplacement for 1394 Fire Wire and other
cables Potential for 150M consumer electronic devices, such as TVs, home
automation camera/camcorder, game consoles, music players etc. by 2009.
Computer & peripheralsReplacement for USB, monitor cable,
parallel ports and other cables – Potential for 100M computers and peripherals by 2009.
Other application needs outside home
Healthcare, SOHO, industrial control, wireless sensor network, smartphones, last mile access, positioning & measurements (asset management), radar…
Consumer electronic applications
Computer applications
Low power, short range 100-500Mbps link
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Key Challenges for Silicon Millimeter-Wave Circuits
Lossy silicon substrate poor isolation, lower Q components.
Need for a predictive design kit such that 1st pass success is achievable. Accurate transmission line and transistor models.
Accurate parasitic extraction (distinction between device and parasitic blurred).
Silicon CAD tools (e.g. Cadence with EM simulation).
Need to yield circuits in the silicon environment density requirements on metal, poly, and active layers. Effect on RF performance of passives?
Achieving very high levels of integration in silicon while maintaining MMW functionality.
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
The Challenges of Test: On-Wafer mmWave Circuit Measurements
Noise Characterization (50-75GHz, 75-90GHz):
Power Characterization(50-75GHz, 75-90GHz):
S-Parameters(40MHz to 110GHz):
MMW modules
diplexers
110GHz VNA system
Challenges at MMW frequencies:
- on-wafer characterization- cable losses- differential measurements
NoiseSource
Low Noise Downconverter
OutputBalun
InputBalun
To VNA
From VNA
to Noise Figure Meter
doc.: IEEE 802.15-04-0665-01-003cNovember 2004
Submission B. Gaucher IBM Research
60GHz Link Budget
Parameter Value
Tx power at antenna +17dBm
Tx antenna gain +6dBi
Person penetration loss (OLOS only) 20dB
Polarization loss 3dB
Rx antenna gain +6dBi
Rx noise figure at antenna 8dB
Modulation QPSK
Spectral efficiency 0.25bps/Hz
Channel coding Reed Solomon
Es/No1dB (~1e-5 BLER)
Receiver implementation loss 1dB
Carrier 59GHz-64GHz
1Gbps@3M
1Gbps@20M
LOS: line-of sight
OLOS: obstructed (by person) LOS
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
An Example of a Conventional Architecture Using SiGe
÷N
Gain=17dBNF=4 dB
90°
LNA Pre-Amp
x3
x3PO=+10dBm
+ 90°
PA
÷2
500MHz
Direct-Convert Rx
Heterodyne Tx
÷N
Gain=16dBNF=15dB
Gain=33dB, NF=6dB
VCO
500MHz
Key Building Block Circuits Low-Noise
Amplifiers
Mixers
Voltage-Controlled Oscillators
Power Amplifiers
Circuits built & tested
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
-102dBc/Hz @ 1MHz
Key 60 GHz Circuits Already Built and Tested:
58 59 60 61 62 63 64 650
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
dB
NF
Gain
Icc = 6 mAVcc = 1.8 VNF (at 60GHz) = 3.3-3.7 dBNF (at 63 GHz) =4.2-4.6 dBMean NF = 3.7 dB
• VCO Meas’d performance•-102 dBc/Hz @ 1MHz•8mA at 3V•Pout -11 dBm
Output Spectrum / Phase Noise
First Gilbert-cell mixers at 60 GHz. Highest integration level for any technology at 60 GHz.
80 transistors
43 transmission lines or inductors Meas’d performance comparable or exceeding GaAs
NF (< 15 dB),
conversion gain (> 16 dB),
Vcc = 2.7V
power (150 mW “core”)
Low Noise Amplifier
Voltage Controlled Oscillator Direct Conversion Mixer
Gain = 10.8 dBP1 dB = 11.2 dBmPsat = 16.2 dBm130 mA at 2.5V
Power Amplifier
ISSCC 2004
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
World’s first 60GHz silicon direct down conversion mixer
First Gilbert-cell mixers at 60 GHz. Highest reported integration level
for any technology at 60 GHz. 80 transistors
43 transmission lines or inductors Performance comparable or
exceeding GaAs NF (< 15 dB),
conversion gain (> 16 dB),
power (150 mW “core”)
1.9mm x 1.65mm
LO Pilot Input19.67 - 21.33 GHz
FrequencyTripler
Buffer
BufferTerminationResistor
Differential Branch-Line DirectionalCoupler
LNA2(Active Balun)
Buffer
Buffer
GilbertMixers
LNA1(Different Chip)
60-GHz Direct-Conversion Quadrature Downconverter
Antenna
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
What are the next steps ?
Make mmWave components look to users just like other low frequency semiconductor components
Broaden the number of potential users worldwide
A new generation of mmWave applications
Demonstrating Monolithic Tx chip and
Monolithic Rx chip
Low cost package which does not require end users to have sophisticated mmWave test and packaging skills
Plastic package
Chip
Antenna
doc.: IEEE 802.15-04-0665-01-003cNovember 2004
Submission B. Gaucher IBM Research
60-GHz Receiver and Transmitter
÷2
x3
IF Amp
IF Mixer BB Amp
I
Q
Image-rejectLNA
Input59-64 GHz
Receiver
÷2
x3
IF Amp
IF Mixer
I
QImage-reject
Driver
Output59-64 GHz
PA
Transmitter
Baseband
DAC
ADC
PFDCPLPF
÷ 32PLL
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Summary of Transceiver Specifications.
Target Simulated
RF frequency range 59GHz-64GHz 59GHz-64GHz
IQ balance +-2 degrees, 1dB TBD
Rx image suppression 20dB 25-30 dB
Tx carrier suppression 25-30dBc TBD
Tx image suppression 20dB 25-30 dB
Rx noise figure (at LNA) <6dB 5.5-7.5 dB
Rx P1dB (LNA on/off) -30dBm / -15dBm -27dBm from LNA-31 dBm for whole RX
Output power (P1dB at PA) >10dBm 16dBm w/ PA8-10 dBm w/ Driver
Phase noise (incl. tripler) -88dBc/1MHz -120dBc Noise floor
-92 dBc/1MHz (VCO only at 3XVCO)
TBD after tripler
Power consumption - RX: 330 mW (inc. PLL)TX: 430 mW (inc. PLL)
PA: 360 mW
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
60-GHz Transmitter Layout
Size: 4.0 x 1.5 mm2
Out
Baseband Inputs
Driver Amp
PLL
Mixer & IFVGATripler
IF Mix
PA
IN
Baseband Outputs
RCLK
LNA
PLL
Mixer & IFVGA Tripler
IF Mix
BB Amp BB Amp
Size: 3.4 x 1.6 mm2
60-GHz Receiver Layout
doc.: IEEE 802.15-04-0665-01-003cNovember 2004
Submission B. Gaucher IBM Research
Concept of Fully Integrated mmWave Transceiver
small wave length (e.g. ~ 5mm @ 60GHz) antenna in package no MMW signal off or on package
IBM SiGe technology with >200GHz fT/fmax
highly integrated silicon based MMW transceiver ICs
low-cost package including fully
integrated MMW transceiver and
antennas
QuarterSizedTransceiver
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Silicon is ready for mmWave frequencies
Millimeter wave applications Applications
Challenges
Lets look at 60 GHz WLAN as an example
Exemplary silicon circuits
Looking at higher frequencies Exemplary circuits (VCOs, LNAs, PA’s…)
And what can we expect silicon mmWave ICs to cost ?
Summary and concluding remarks
Outline
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
…and what can we expect silicon mmWave ICs to cost ? Keys to driving cost…look at 802.11x WLANs as an example
Establishing an industry standard (802.11b) Generating volumes:
Chip sets “everywhere” (PCs, enterprise & SOHO access points, adaptor cards, etc….) “riding” the silicon cost curve
Silicon integration (1st in SiGe, then in CMOS)
802.11b Chip Set
0
50
100
150
1996 1998 2000 2002 2004 2006 2008
YEAR
ASP
($)
SiGe integration & volumes
CMOS integration & volumes
Mmwave ICs in SiGe can be expected to follow similar historical trends !
(chip set includes RF transceiver, PA, BB, MAC)
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Silicon is ready for mmWave frequencies
Millimeter wave applications Applications
Challenges
Lets look at 60 GHz WLAN as an example
Exemplary silicon circuits
Looking at higher frequencies Exemplary circuits (VCOs, LNAs, PA’s…)
And what can we expect silicon mmWave ICs to cost ?
Summary and concluding remarks
Outline
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
….this is only the beginning ! New transistors and passives open up bands to 150 GHz !
Imaging Wireless measurements ????
1997 1998 1999 2000 2001 2002 2003
CMOS lithography
0.5um3.3v
0.5/0.35um3.3, 5v
0.25um2.5v
0.18um1.8v
0.13um1.2v
LegendHigh Speed NPN Ft /Fmax (MAG)/ BVceoFt/Fmax (Unilateral Gain)
6HP6HP
47/60 GHz/3.3V
7HP
120/100 GHz/1.8V120/125GHz
8HP
200/180GHz/1.7V200/250GHz
Next Gen
Target 300GHz/TBD
5HP
50/50 GHz/3.3V
2004
wireless
Radar (24 GHz Automotive)Wirleline (40 GbpsOC768)
wireless
mmWave
Quasi-optical Band
Submission B. Gaucher IBM Research
November 2004 doc.: IEEE 802.15-04-0665-01-003c
Summary & concluding remarks
“…anything that can be done in silicon; will be done in silicon…” SiGe enables low power & high level integration not possible in III-V technologies
We have demonstrated key mmWave building block circuits in SiGe with performance suitable for enabling the 60 GHz ISM band
highest integration direct-conversion mixer high performance V-band LNAs power amplifiers
Historical silicon “take down” curves suggest attractive costs for mmWave transceivers based on
Silicon integration volume growth
We are witnessing the rebirth and renaissance of millimeter wave technology and applications enabled by a new generation of silicon
Thank you !