SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Project: IEEE...

Submission B. Gaucher IBM Research

November 2004 doc.: IEEE 802.15-04-0665-01-003c

Project: IEEE P802.15 Working Group for Wireless Personal Area Networks

Submission Title: [Silicon Millimeter Wave Integrated Circuits for Wireless Applications]

Date Submitted: [November 15, 2004]Source: [Brian Gaucher] Company [IBM Research]Address [PO 218 Rte 134 MS38-159 Yorktown Heights, NY 10598]Voice: [(914) 945-2596], E-Mail: [[email protected]]Re: [Abstract:[Silicon Millimeter Wave Integrated Circuits for in the 60 GHz band have

been built and tested and demonstrate that a potential low cost path exists that may enable consumer level mmWave wireless applications.]

Purpose: [Contribution to mmW SG3c at November 2004 plenary in San Antonio]Notice: This document has been prepared to assist the IEEE P802.15. It is

offeredas a basis for discussion and is not binding on the contributing individual(s) ororganization(s). The material in this document is subject to change in form and

contentafter further study. The contributor(s) reserve(s) the right to add, amend or

withdrawmaterial contained herein.Release: The contributor acknowledges and accepts that this contribution

becomesthe property of IEEE and may be made publicly available by P802.15.



Silicon is ready for mmWave frequencies

Millimeter wave applications Applications

Challenges

Lets look at 60 GHz WLAN as an example

Exemplary silicon circuits

Looking at higher frequencies Exemplary circuits (VCOs, LNAs, PA’s…)

And what can we expect silicon mmWave ICs to cost ?

Summary and concluding remarks

Outline



Evolution of SiGe HBTs

Significant improvement in Ft/Fmax with each generation

1997 1998 1999 2000 2001 2002 2003

CMOS lithography

0.5um3.3v

0.5/0.35um3.3, 5v

0.25um2.5v

0.18um1.8v

0.13um1.2v

LegendHigh Speed NPN Ft /Fmax (MAG)/ BVceoFt/Fmax (Unilateral Gain)

6HP6HP

47/60 GHz/3.3V

7HP

120/100 GHz/1.8V120/125GHz

8HP

200/180GHz/1.7V200/250GHz

5HP

50/50 GHz/3.3V

2004

wireless

Radar (24 GHz Automotive)Wirleline (40 GbpsOC768)

wireless

mmWave



Increasing speed of silicon technologies

CMOSCMOS

SiGe/Si SiGe/Si BipolarBipolar

III-VIII-V

“…if it can be done in silicon; it will be done in silicon…”

1 & 10 Gbps hardware shipping1st publications targeting 40 Gbps1st publications targeting 60GHzLarge scale integration

10 & 40 Gbps hardware shipping1st designs targeting 80 to100 Gbps1st designs targeting mmWaveMedium scale integration

Focus:on large V swingHigh powerSmall scale integration





Challenges






Outline

doc.: IEEE 802.15-04-0665-01-003cNovember 2004


IEEE Standards Headed Toward 60GHz?

Data rate trend vs. history

0.1

1

10

100

1000

10000

1975 1980 1985 1990 1995 2000 2005 2010

Year

Sp

eed

(M

bp

s)

1Base-T

10Base-T

100Base-T

1000Base-T

10GBase-T

802.11

802.11b

802.11a

802.15.3

Ethernet WLAN WPANUSB

USB1.0

USB1.1

USB2.0

Drivers include: Frequency allocation WW, bandwidth, capacity, power, cost, reliability

BT1.0

BT 2.0

60 GHz

802.11nUWB

802.15.3 has the potential to continue the wireless chase, UWB, 60 GHz

WLAN/WPAN may extend its speed advantage

802.11n is addressing this space

WLAN may go with 60GHz given it has 5GHz of bandwidth, world wide

Not likely to see real 480-1000Mbps HW until >2006.



Millimeter Wave Applications

802.11x Markets WLAN

WPAN Automotive Radar at 77/79 GHz Telecommunications backhaul Consumer Wireless Last Mile …

Military Markets (38, 60, 94 GHz) Future Combat systems

Secure communications

Satellite Communications

Military phased array markets

Reconfigurable, software definable systems

Integrated WirelessC

om

mer

cial

Mil

itar

yCommercial Apps

Military Apps



High-Speed Wireless Need Driven by Consumer Apps

Consumer electronicsReplacement for 1394 Fire Wire and other

cables Potential for 150M consumer electronic devices, such as TVs, home

automation camera/camcorder, game consoles, music players etc. by 2009.

Computer & peripheralsReplacement for USB, monitor cable,

parallel ports and other cables – Potential for 100M computers and peripherals by 2009.

Other application needs outside home

Healthcare, SOHO, industrial control, wireless sensor network, smartphones, last mile access, positioning & measurements (asset management), radar…

Consumer electronic applications

Computer applications

Low power, short range 100-500Mbps link



Key Challenges for Silicon Millimeter-Wave Circuits

Lossy silicon substrate poor isolation, lower Q components.

Need for a predictive design kit such that 1st pass success is achievable. Accurate transmission line and transistor models.

Accurate parasitic extraction (distinction between device and parasitic blurred).

Silicon CAD tools (e.g. Cadence with EM simulation).

Need to yield circuits in the silicon environment density requirements on metal, poly, and active layers. Effect on RF performance of passives?

Achieving very high levels of integration in silicon while maintaining MMW functionality.



The Challenges of Test: On-Wafer mmWave Circuit Measurements

Noise Characterization (50-75GHz, 75-90GHz):

Power Characterization(50-75GHz, 75-90GHz):

S-Parameters(40MHz to 110GHz):

MMW modules

diplexers

110GHz VNA system

Challenges at MMW frequencies:

- on-wafer characterization- cable losses- differential measurements

NoiseSource

Low Noise Downconverter

OutputBalun

InputBalun

To VNA

From VNA

to Noise Figure Meter



60GHz Link Budget

Parameter Value

Tx power at antenna +17dBm

Tx antenna gain +6dBi

Person penetration loss (OLOS only) 20dB

Polarization loss 3dB

Rx antenna gain +6dBi

Rx noise figure at antenna 8dB

Modulation QPSK

Spectral efficiency 0.25bps/Hz

Channel coding Reed Solomon

Es/No1dB (~1e-5 BLER)

Receiver implementation loss 1dB

Carrier 59GHz-64GHz

1Gbps@3M

1Gbps@20M

LOS: line-of sight

OLOS: obstructed (by person) LOS



An Example of a Conventional Architecture Using SiGe

÷N

Gain=17dBNF=4 dB

90°

LNA Pre-Amp

x3

x3PO=+10dBm

+ 90°

PA

÷2

500MHz

Direct-Convert Rx

Heterodyne Tx

÷N

Gain=16dBNF=15dB

Gain=33dB, NF=6dB

VCO

500MHz

Key Building Block Circuits Low-Noise

Amplifiers

Mixers

Voltage-Controlled Oscillators

Power Amplifiers

Circuits built & tested



-102dBc/Hz @ 1MHz

Key 60 GHz Circuits Already Built and Tested:

58 59 60 61 62 63 64 650

2

4

6

8

10

12

14

16

18

20

Frequency (GHz)

dB

NF

Gain

Icc = 6 mAVcc = 1.8 VNF (at 60GHz) = 3.3-3.7 dBNF (at 63 GHz) =4.2-4.6 dBMean NF = 3.7 dB

• VCO Meas’d performance•-102 dBc/Hz @ 1MHz•8mA at 3V•Pout -11 dBm

Output Spectrum / Phase Noise

First Gilbert-cell mixers at 60 GHz. Highest integration level for any technology at 60 GHz.

80 transistors

43 transmission lines or inductors Meas’d performance comparable or exceeding GaAs

NF (< 15 dB),

conversion gain (> 16 dB),

Vcc = 2.7V

power (150 mW “core”)

Low Noise Amplifier

Voltage Controlled Oscillator Direct Conversion Mixer

Gain = 10.8 dBP1 dB = 11.2 dBmPsat = 16.2 dBm130 mA at 2.5V

Power Amplifier

ISSCC 2004



World’s first 60GHz silicon direct down conversion mixer

First Gilbert-cell mixers at 60 GHz. Highest reported integration level

for any technology at 60 GHz. 80 transistors

43 transmission lines or inductors Performance comparable or

exceeding GaAs NF (< 15 dB),

conversion gain (> 16 dB),

power (150 mW “core”)

1.9mm x 1.65mm

LO Pilot Input19.67 - 21.33 GHz

FrequencyTripler

Buffer

BufferTerminationResistor

Differential Branch-Line DirectionalCoupler

LNA2(Active Balun)

Buffer

Buffer

GilbertMixers

LNA1(Different Chip)

60-GHz Direct-Conversion Quadrature Downconverter

Antenna



What are the next steps ?

Make mmWave components look to users just like other low frequency semiconductor components

Broaden the number of potential users worldwide

A new generation of mmWave applications

Demonstrating Monolithic Tx chip and

Monolithic Rx chip

Low cost package which does not require end users to have sophisticated mmWave test and packaging skills

Plastic package

Chip

Antenna



60-GHz Receiver and Transmitter

÷2

x3

IF Amp

IF Mixer BB Amp

I

Q

Image-rejectLNA

Input59-64 GHz

Receiver

÷2

x3

IF Amp

IF Mixer

I

QImage-reject

Driver

Output59-64 GHz

PA

Transmitter

Baseband

DAC

ADC

PFDCPLPF

÷ 32PLL



Summary of Transceiver Specifications.

Target Simulated

RF frequency range 59GHz-64GHz 59GHz-64GHz

IQ balance +-2 degrees, 1dB TBD

Rx image suppression 20dB 25-30 dB

Tx carrier suppression 25-30dBc TBD

Tx image suppression 20dB 25-30 dB

Rx noise figure (at LNA) <6dB 5.5-7.5 dB

Rx P1dB (LNA on/off) -30dBm / -15dBm -27dBm from LNA-31 dBm for whole RX

Output power (P1dB at PA) >10dBm 16dBm w/ PA8-10 dBm w/ Driver

Phase noise (incl. tripler) -88dBc/1MHz -120dBc Noise floor

-92 dBc/1MHz (VCO only at 3XVCO)

TBD after tripler

Power consumption - RX: 330 mW (inc. PLL)TX: 430 mW (inc. PLL)

PA: 360 mW



60-GHz Transmitter Layout

Size: 4.0 x 1.5 mm2

Out

Baseband Inputs

Driver Amp

PLL

Mixer & IFVGATripler

IF Mix

PA

IN

Baseband Outputs

RCLK

LNA

PLL

Mixer & IFVGA Tripler

IF Mix

BB Amp BB Amp

Size: 3.4 x 1.6 mm2

60-GHz Receiver Layout



Concept of Fully Integrated mmWave Transceiver

small wave length (e.g. ~ 5mm @ 60GHz) antenna in package no MMW signal off or on package

IBM SiGe technology with >200GHz fT/fmax

highly integrated silicon based MMW transceiver ICs

low-cost package including fully

integrated MMW transceiver and

antennas

QuarterSizedTransceiver





Challenges






Outline



…and what can we expect silicon mmWave ICs to cost ? Keys to driving cost…look at 802.11x WLANs as an example

Establishing an industry standard (802.11b) Generating volumes:

Chip sets “everywhere” (PCs, enterprise & SOHO access points, adaptor cards, etc….) “riding” the silicon cost curve

Silicon integration (1st in SiGe, then in CMOS)

802.11b Chip Set

0

50

100

150

1996 1998 2000 2002 2004 2006 2008

YEAR

ASP

($)

SiGe integration & volumes

CMOS integration & volumes

Mmwave ICs in SiGe can be expected to follow similar historical trends !

(chip set includes RF transceiver, PA, BB, MAC)





Challenges






Outline



….this is only the beginning ! New transistors and passives open up bands to 150 GHz !

Imaging Wireless measurements ????

1997 1998 1999 2000 2001 2002 2003

CMOS lithography

0.5um3.3v

0.5/0.35um3.3, 5v

0.25um2.5v

0.18um1.8v

0.13um1.2v

LegendHigh Speed NPN Ft /Fmax (MAG)/ BVceoFt/Fmax (Unilateral Gain)

6HP6HP

47/60 GHz/3.3V

7HP

120/100 GHz/1.8V120/125GHz

8HP

200/180GHz/1.7V200/250GHz

Next Gen

Target 300GHz/TBD

5HP

50/50 GHz/3.3V

2004

wireless

Radar (24 GHz Automotive)Wirleline (40 GbpsOC768)

wireless

mmWave

Quasi-optical Band



Summary & concluding remarks

“…anything that can be done in silicon; will be done in silicon…” SiGe enables low power & high level integration not possible in III-V technologies

We have demonstrated key mmWave building block circuits in SiGe with performance suitable for enabling the 60 GHz ISM band

highest integration direct-conversion mixer high performance V-band LNAs power amplifiers

Historical silicon “take down” curves suggest attractive costs for mmWave transceivers based on

Silicon integration volume growth

We are witnessing the rebirth and renaissance of millimeter wave technology and applications enabled by a new generation of silicon

Thank you !

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