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The top documents tagged [nm sio]
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nm sio
Copyright 2011 Elsevier Inc. All rights reserved. Chapter 2 R. Nagarajan, S. Awad and K.R. Gopi.
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Forschungszentrum Jülich in der Helmholtz-Gemeinschaft CWRF2008 RF Power improvement of AlGaN/GaN based HFETs and MOSHFETs A.Fox, M. Marso CWRF2008 CERN.
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Optical near-field control of nanoresonators
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Near Field Optics Group OMR ICB - Université de Bourgogne Benoit Cluzel, Loïc.
217 views
Savas Kaya and Ahmad Al-Ahmadi School of EE&CS Russ College of Eng & Tech e-mail:
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Search for Optimum and Scalable COSMOS.
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Atomistic Simulation of Carbon Nanotube FETs Using Non-Equilibrium Green’s Function Formalism Jing Guo 1, Supriyo Datta 2, M P Anantram 3, and Mark Lundstrom.
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Green Transistor for 10X Lower IC Power ? Chenming Hu University of California, Berkeley Supported by: DARPA STEEP, FCRP-MSD.
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ITRI Jassy Wang
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Chris A. Mack, Fundamental Principles of Optical Lithography, (c) 2007 1 Figure 4.1 Film stack showing (a) the geometry for the standing wave derivation,
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® Logic Process Development at Intel PhD Fellowship Forum October 21, 2004 Mark Bohr Intel Senior Fellow Director of Process Architecture & Integration.
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Simulations of sub-100nm strained Si MOSFETs with high- gate stacks Lianfeng Yang, Jeremy Watling *, Fikru Adamu-Lema, Asen Asenov and John Barker Device.
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CONFIDENTIAL – Property of Optical Dynamics Corporation, Distribution Prohibited OPTICAL DYNAMICS Vision – Passion - Innovation.
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F-91405 ORSAY cedex FRANCE J. SAINT MARTIN, V. AUBRY-FORTUNA, A. BOURNEL, P. DOLLFUS, S. GALDIN, C. CHASSAT
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Influence Of Ballistic.
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