EFFECT OF ELECTRON BLOCKING LAYER ON EFFICIENCY DROOP IN INGAN/GAN MULTIPLE QUANTUM WELL LIGHT-EMITTING DIODES

SANG-HEON HAN, DONG-YUL LEE, SANG-JUN LEE, CHU-YOUNG CHO, MIN-KI KWON,S. P. LEE,1 D. Y. NOH, DONG-JOON KIM, YONG CHUN KIM, AND SEONG-JU PARK, APPLIED PHYSICS LETTERS 94, 231123 2009

C.C. Shan

1

OUTLINE

Introduction LED Fabrication LED Performance Conclusions References

2

INTRODUCTION

Electron overflow to the p-type region and results in an efficiency droop.

EBL has effectively confining electrons in the MQW region of most MQW LEDs.

3

LED FABRICATION

Sapphire (0001)

buffer 25nm

N-GaN 5um

MQWEBL

P-GaN

550*550um2

P

N

40nmLEDA:0%LEDB:22%LEDC:32%150nm

4

LED PERFORMANCE

FIG. 1. Color online V-I curves of the LEDs A, B, and C.5

LED PERFORMANCE

FIG. 2. Color online Light output power vs current density of LEDs A, B, and C, a at low current density and b at high current density.

6