Post on 23-Jul-2020
transcript
CoolCAD Electronics, LLCSiC Fabrication Overview
Zeynep Dilli, Akin Akturk, Neil Goldsman,
Aysanew Abate, Mitchell Gross
We gratefully acknowledge the support of NASA, PowerAmerica, ARL
CoolCAD ElectronicsSiC Fabrication Portfolio
We have
• Designed, • Laid out, • Developed fabrication processes for, • Fabricated
a wide variety of SiC devices, including:
• Linear UV Photodiodes• Linear UV Photodiode Arrays• Avalanche UV Photodiodes• 3-T Pixels• MOSFETs• MOSCAPs• Passive Load Amplifiers• Active Load Amplifiers• CMOS Circuitsand more.
Linear UV Photodiodes
Linear UV Photodiode Modeling
3.2
eV
4.3
7eV
6.3
eV 4.2
eV6.1
7eV
6.4
9eV
4.4
8eV
A L M Γ A H K Γ M K
5.0
2eV
-0.2
0
0.2
0.4
0.6
0.8
1
3 4 5 6 7
Energy (eV)
Normalized Responsivity
3.2eV
4.36eV
5.07eV
Linear UV Photodiode Arrays
Miniaturization Yield Pixel Count Isolation
Avalanche UV Photodiodes
Avalanche UV Photodiodes _ Operation
3-T Pixels
SiC ICs
MOSFETs
0.00E+00
5.00E-05
1.00E-04
1.50E-04
2.00E-04
2.50E-04
0 1 2 3 4 5 6 7 8
Id (
A)
Vd (V)
400 C
40/10
10/40
Amplifiers
SiC MOSFET Common Source
AmplifierPassive Load Differential
Amplifier
Silicon Carbide Device Fabrication
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CoolCAD’s SiC fabrication and rad testing efforts
• Layout Design based on custom process rules.
• Process Design Kit development for various processes
• Lithography mask designs and fabrication
• Complementary electrical simulation tools development:
CoolSPICE.
• Process methods developed for:
• Ion Implantation / Dopant Activation
• Contact Deposition / Contact Anneal
• Oxide growth / deposition
• Etching / passivation
• Silicon carbide, silicon, germanium, etc. fabrication at the Univ. of Maryland’s Maryland Nanocenter FabLab.
• Silicon carbide high temperature complementary processing at CoolCAD’s facility.
• Silicon carbide in-house developed recipes for dopant activation, oxidation, etching, metal deposition, contact annealing, etc.
• Silicon carbide Integrated Circuit components fabrication.
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CoolCAD SiC CMOS: IV CompsGeneration 2
40mm/20mm 40mm/20mm
Raytheon / Scotland SiC
CMOS process
CoolCAD SiC CMOS process:
We offer a competitive higher
performance US based SiC foundry
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CoolCAD SiC CMOS: Hi-TempGeneration 2
15
CoolCAD SiC CMOS: Heavy Ion Tests
Generation 2
Au Normal incident,
Fluence ~2e6 ions/cm2
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CoolCAD SiC CMOS: Heavy Ion Tests
Generation 2RUN 5 Au
Normal, T=0, Fluence ~2e5 ions/cm2, Average flux ~ 291 ions/cm2/s, Dose ~ 277 rad
PREPOST5
PREPOST5
PREPOST5
PREPOST5
PREPOST5
PREPOST5
DURING RADIATION
EN = 3.5MV/cm EP=-3.5MV/cm
IGNIGP
NM
OS
PM
OS
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CoolCAD SiC CMOS: Heavy Ion TestsAu Normal, T=0, Fluence ~2e5 ions/cm2, Average flux ~ 291 ions/cm2/s, Dose ~ 277 rad