Post on 06-Feb-2018
transcript
Abhay SHUKLA et al.(IMPMC, UPMC-P6) Massimiliano MARANGOLO et al. (INSP, UPMC-P6)
Sébastien LEBESGUE et al. (CRM2, Nancy)
Graphene and beyond: Other 2D Materials
MoS2
InSe
1L
2L GaSe
2L
1L
3L
2D materials (by anodic bonding) IMPMC
MoS2
O2- Na+
Na2O =>2Na+ + O2-
Layered precursor
MoS2 IMPMC
0 50 100 150 200 250 3000
1
2
T(K)
x
xh
/e2)
n= 5,3 1012/cm2
n= 9,8 1012/cm2
n= 1,5 1013/cm2
-6 -4 -2 0 2 4 6
-20
0
20
40
60
80
100
120
B(T)
R
xx(
)
8K
µ = 80 cm2 V-1 s-1
Weak
Localization
Semiconductor-metal transition Compression-shear modes:
ultra low energy
Devices, Heterostructures IMPMC
InSe
Graphene
Graphene Few layer InSe
Drain Cr/Au Source Cr/Au
SiO2/Si
Gate Vg
Vds
Historique d’activité
Mauri et al. IMPMC
Théorie ab-intio
M. Calandra, ce matin
Shukla et al. IMPMC
Graphène, dichalcogenures, semiconducteurs II-VI
Fabrication, Raman,
(magneto)transport, dispositifs simples
Marangolo et al. INSP
Isolants topologiques (MBE)
Spectroscopies synchrotron
Ouerghi et al. LPN
SiC Graphène, fonctionnalisation
Spectroscopie synchrotron
ANR en cours, collaborations,
publications
Boutchich et al. LGEP
Dispositifs, Photovoltaique
Topological insulators INSP
18 QL
1mm
__________
1_QL
-0.2 0.0 0.2
-0.9
-0.6
-0.3
0.0
E-
EF (
eV)
K / /
(Å-1)
3_QL
-0.2 0.0 0.2
K / /
(Å-1)
9_QL
-0.2 0.0 0.2
K / /
(Å-1)
MBE grown state-
of the art Bi2Se3
Thickness
dependent gap
Topological insulators INSP
Fe doping: dilute
Dirac cones stable with Fe doping
Probable dilution in thin films
Collab. THALES, ELETTRA, LPEM, LPS
Graphene and other materials: C2RM Nancy
Graphene and other materials: C2RM Nancy
Other materials: closer look at MoS2
Ye et al. Science (2012)
Doping,
superconductivity
Properties, devices
Eda et al.Nanoletters (2012)
Radisavjlevic et
al.NatureNano (2011)
Spin Hall, Valley Hall
Xiao et al. PRL (2012)
Mak et al. Nature Nano (2012)
Why go beyond Graphene?
• New domain of 2D materials, more difficult than graphene but much larger field
Fundamental Physics
- Phase transitions with electrostatic doping
- Quantum effects: Localization, Conductance fluctuations
- Topologically protected states
- New phenomena: spin-Hall, valley Hall effects;
Applied Physics
- Use above phenomena for new devices
- Combine properties of different 2D materials for more efficient devices