Post on 30-Sep-2020
transcript
RDS(ON) at 25ºC
RDS(ON) at 150ºC
QG at 150ºC
Switching Energy Loss
20 AmpC2M0080120D
50 Amp CPM2-1200-0025B
80 mΩ
150 mΩ
50 nC
0.56 mJ
25 mΩ
45 mΩ
180 nC
1.9 mJ
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. For informational purposes only. See cree.com/power for product specifications.
Why Cree SiC power?State-of-the-art SiC technology• Industry’s First 50 Amp SiC MOSFET• Industry’s lowest switching losses
More capable than silicon• High power density: more than 3 times Si IGBT• Low switching losses: less than 20% of Si IGBT
Lower system cost for OEM and end user• Higher frequency operation reduces magnetics• Higher efficiency reduces heat sink size• Lower amperage requirement for modules• Lower installation costs
www.cree.com/powerVisit www.cree.com/power and learn how you can get twice the amps-per-dollar.
Cree’s second generation silicon carbide (SiC) MOSFETs
reach a price-performance point that enables systems to
have higher efficiency and smaller size at cost parity with
silicon-based solutions.
Available in bare die,
packaged parts
and modules.
Second GenerationZ-FET™ SiC MOSFET
New devices deliver twice the amps-per-dollar
Twice theamps-per-dollar
“We have evaluated Cree’s second generation SiC MOSFET in our advanced solar circuit...These substantially improve the cost-performance tradeoff in solar inverters in favor of smaller, lighter and more efficient systems.”
Dr. Bruno Burger Head of Power Electronics Department, Fraunhofer-ISE.
300 Amp SiC more capable than 600 Amp IGBTs
Lo
sse
s (W
att
s) 250
300
350
200
150
100
50
0
Diode
Switching
Conduction
SiC MOSFET300 Amp, 10kHz
Si IGBT 600 Amp, 3kHz
(250 Amp RMS @ 500V)