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R DS(ON) at 25ºC R DS(ON) at 150ºC Q G at 150ºC Switching Energy Loss 20 Amp C2M0080120D 50 Amp CPM2-1200-0025B 80 mΩ 150 mΩ 50 nC 0.56 mJ 25 mΩ 45 mΩ 180 nC 1.9 mJ Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. For informational purposes only. See cree.com/power for product specifications. Why Cree SiC power? State-of-the-art SiC technology • Industry’s First 50 Amp SiC MOSFET • Industry’s lowest switching losses More capable than silicon • High power density: more than 3 times Si IGBT • Low switching losses: less than 20% of Si IGBT Lower system cost for OEM and end user • Higher frequency operation reduces magnetics • Higher efficiency reduces heat sink size • Lower amperage requirement for modules • Lower installation costs www.cree.com/power Visit www.cree.com/power and learn how you can get twice the amps-per-dollar. Cree’s second generation silicon carbide (SiC) MOSFETs reach a price-performance point that enables systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. Available in bare die, packaged parts and modules. Second Generation Z-FET ™ SiC MOSFET New devices deliver twice the amps-per-dollar Twice the amps-per-dollar “We have evaluated Cree’s second generation SiC MOSFET in our advanced solar circuit...These substantially improve the cost-performance tradeoff in solar inverters in favor of smaller, lighter and more efficient systems.” Dr. Bruno Burger Head of Power Electronics Department, Fraunhofer-ISE. 300 Amp SiC more capable than 600 Amp IGBTs Losses (Watts) 250 300 350 200 150 100 50 0 Diode Switching Conduction SiC MOSFET 300 Amp, 10kHz Si IGBT 600 Amp, 3kHz (250 Amp RMS @ 500V)
