RDS(ON) at 25ºC

RDS(ON) at 150ºC

QG at 150ºC

Switching Energy Loss

20 AmpC2M0080120D

50 Amp CPM2-1200-0025B

80 mΩ

150 mΩ

50 nC

0.56 mJ

25 mΩ

45 mΩ

180 nC

1.9 mJ

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. For informational purposes only. See cree.com/power for product specifications.

Why Cree SiC power?State-of-the-art SiC technology• Industry’s First 50 Amp SiC MOSFET• Industry’s lowest switching losses

More capable than silicon• High power density: more than 3 times Si IGBT• Low switching losses: less than 20% of Si IGBT

Lower system cost for OEM and end user• Higher frequency operation reduces magnetics• Higher efficiency reduces heat sink size• Lower amperage requirement for modules• Lower installation costs

www.cree.com/powerVisit www.cree.com/power and learn how you can get twice the amps-per-dollar.

Cree’s second generation silicon carbide (SiC) MOSFETs

reach a price-performance point that enables systems to

have higher efficiency and smaller size at cost parity with

silicon-based solutions.

Available in bare die,

packaged parts

and modules.

Second GenerationZ-FET™ SiC MOSFET

New devices deliver twice the amps-per-dollar

Twice theamps-per-dollar

“We have evaluated Cree’s second generation SiC MOSFET in our advanced solar circuit...These substantially improve the cost-performance tradeoff in solar inverters in favor of smaller, lighter and more efficient systems.”

Dr. Bruno Burger Head of Power Electronics Department, Fraunhofer-ISE.

300 Amp SiC more capable than 600 Amp IGBTs

Lo

sse

s (W

att

s) 250

300

350

200

150

100

50

0

Diode

Switching

Conduction

SiC MOSFET300 Amp, 10kHz

Si IGBT 600 Amp, 3kHz

(250 Amp RMS @ 500V)