A SiC MOSFET for mainstream adoptionfiles.iccmedia.com/events/powercon17/munich_07_infineon.pdf ·...

A SiC MOSFET for mainstream adoptionPower Electronics Conference 2017, MunichDecember 5th, 2017

Dr. Fanny Björk, Infineon

Multiple levers for a SiC MOSFET must match

Reliability and robustness assurance

Cost position

System compatibility

Performance

Volume manufacturing capability

22017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.

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ηin

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POUT in W

1200V SiC MOSFET: new degree of flexibility for system improvements

Higher conversion efficiency

Lower switching and conduction losses lead to › higher conversion efficiency at same

switching frequency› higher output power for a given

frame size

3L IGBT @24kHzState of the art solution

3L SiC @24kHz

Boosted efficiency enables› increased switching frequencies to

shrink magnetic components› reduced power circuit complexity by

using simpler topologies, e.g. 2L instead of 3L

Effect on system costs

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3L SiC @72kHz

3L IGBT @24kHzState of the art solution

Effi

cien

cy [

%]

Output Power [kW]

Effi

cien

cy [

%]

Output Power [kW]


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2L SiC @48kHz

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Output Power in kW

SiC MOSFET fast switching capability must be handledwell, plug and play not always possible

2L SiC @48kHz3L Si IGBT @24kHz Si toSiC

Source: Sobe et al. PCIM 2017, “ Experimental study of Si- and SiC-based Voltage Source Inverters “

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Original design

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PCB re-design

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Different inductor design


Highest efficiency and/or frequency by upgrading 3L topology with SiC MOSFET

3L Si IGBT@24kHz

3L with 1200 V SiC MOSFET

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with SiC

Plug&Play ?!


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24 kHz

72 kHz


SiC MOS A SiC MOS B SiC MOS C CoolSiC™

CoolSiC™ MOSFET comes with IGBT compatible gate driving

Vgs

,th

(V)

-15-10

-505

1015202530

Vgs,max

Vgs,min

Vgs,op+

Vgs,op-

15 V


CoolSiC™ MOSFET comes with high robustness against parasitic turn-on

0

1

2

3

4

5

6

Vendor A Vendor B Vendor C Infineon

Vgs,t

h [V

]

Vgs,maxVgs,typVgs,min

4.5 V

3.5 V


SiC MOS A SiC MOS B SiC MOS C CoolSiC™

SiC MOSFETs need the feature to be externally slowed down – example CoolSiC™ MOSFET

Rg controllable di/dt and dv/dt

I(t)

t

RG

Impact of Rg on dv/dt

MOSFETIGBT

› Essential pre-condition to cope with EMI aspects


Driving SiC MOSFETs

› SiC MOSFETs are fast switching AND high voltage devices, which can reach 50 V/ns or above

› Higher switching speed requires higher gate drive current strength as well as well-matched delays and accurate timing and tight tolerances

› SiC MOSFETs might need a negative gate voltage or a Miller clamp

› SiC MOSFETs may need fast short circuit protection as its short circuit capability is less than traditional IGBT


EiceDRIVER™ ICs are perfect fit to CoolSiC™ MOSFET

Features› Three families to perfectly match

design requrirements– 4 single-channel high-side

compact gate drivers– 2 single- and dual output

enhanced drives with short-circuit protection

– 1 slew-rate control high-sidedriver for toughest requirements

› Available in wide body packagewith 7.6 mm creepage distance

› Suitable for operation at high ambient temperature

› Active Miller clamp› Short circuit clamping and active

shutdown› ≥ 100 kV/μs CMTI (1EDU20I12SV:

≥ 50 kV/μs CMTI )› Precision short-circuit protection

(through DESAT)› 12 V/ 11 V typical UVLO thresholds


Part NumberTypicalPeak Drive Current

VCC2-VEE2

TypicalPropagation Delay

Active Miller Clamp

Other Key Features

1EDI20I12MFDSO-8 150mil

3.5 A 20 V ≤ 300 ns Yes Functional Isolation

1EDC20H12AHDSO-8 300mil

3.5 A 40 V ≤ 125 ns No7.6 mm CreepageClearance;UL 1577 certified with VISO = 2.5 kV(rms) for 1 min

1EDC60H12AHDSO-8 300mil

9.4 A 40 V ≤ 125 ns No

1EDC20I12MHDSO-8 300mil

3.5 A 20 V ≤ 300 ns Yes

1ED020I12-F2DSO-16 300mil

2.0 A 28 V ≤ 170 ns Yes Short circuit clamping; DESAT protection;Active shutdown2ED020I12-F2

DSO-362.0 A 28 V ≤ 170 ns Yes

1EDU20I12SVDSO-36

2.0 A 28 V ≤ 485 ns Yes

Real-time adjustable gate current control;Over-current protection;Soft turn-off shut down;Two-level turn-off;UL 1577 certified with VISO = 5 kV(rms) for 1 min

https://www.infineon.com/cms/en/product/productType.html?productType=5546d46245da30dc014628ba8a52228c

https://www.infineon.com/cms/en/product/productType.html?productType=5546d4625d5945ed015d87ff6ca721e5

https://www.infineon.com/cms/en/product/productType.html?productType=5546d4625d5945ed015d87ff81cb21ea

https://www.infineon.com/cms/en/product/productType.html?productType=5546d4625d5945ed015d87ff74aa21e7

https://www.infineon.com/cms/en/product/power/gate-driver-ics/galvanic-isolated-gate-driver/1ED020I12-F2/productType.html?productType=db3a304430f67fc00131036068c70785

http://www.infineon.com/cms/en/product/power/gate-driver-ics/galvanic-isolated-gate-driver/2ED020I12-F2/productType.html?productType=db3a30443322879801334092b0db0d35

https://www.infineon.com/cms/en/product/power/gate-driver-ics/galvanic-isolated-gate-driver/1EDU20I12SV/productType.html?productType=5546d4625debb399015decd89eeb7288

Reliability androbustness assurance

fsw [Hz]

Pout [W]

1k

1k 10k 100k 1M

1M

10k

100k

10M

10M

Silicon

SiC

GaN

Central PV*

› Remains mainstream technology

* PV = photovoltaic inverter; ** OBC = onboard charger

String PV*

pile

OBC**

Reliability and robustness assurance in SiC strongly linked to silicon mainstream technologies

Infineon is a proven leading supplier when it comes to• high power• high reliability• high robustnessWith this experience we set tough SiC MOSFET requirements


CoolSiC™ MOSFET shows an oxide stability similar to the well established silicon IGBT's

Failure rates of SiC MOSFETs Picture obtained on Si-IGBT's

Source: Beier-Möbius et al. PCIM 2017


Robustness levels equivalent to IGBT based systems by advanced trench technology

DMOS

Trenchvs

n-

e e e e

strong trade-off between performance and gate oxide robustness in on-state

n-

pee

easier to reach performance without violating gate oxide safe conditions

Perf

orm

ance

Robustness

Positioning


New publication Vth stability: Aichinger et al. Microelectronics Reliability 80 (2018) 68–78

CoolSiC™ MOSFET body diode can be used

Test conditions:› DC stress of body diode at

VGS=-9 V, 20 A per chip, Tvj~150°C› VF and RDSon correlations >100h DC

operation

3,9

4,1

4,3

4,5

4,7

4,9

3,9 4,1 4,3 4,5 4,7 4,9

VF [V

]: In

term

edia

te /

Fina

l Tes

t

VF [V]: Pre-Test

Correlation VF

0,02

0,02

0,02

0,03

0,03

0,03

0,02 0,02 0,02 0,03 0,03 0,03R

DSo

n[O

hm]:

Inte

rmed

iate

/ Fi

nal T

est

RDSon [Ohm]: Pre-Test

Correlation RDSon

CoolSiC™ MOSFET body diode iscommutation robust and reliablein long term operation.


Cost position

System costs

Better productivity SiC vs. Si

Chip costs

2017

exemplary

SiC

Si

2017

SiC@10kHz

SiC@40kHzSi

exemplary


Volume manufacturingcapability

Extreme high volume flexibility

and reliability proven by multi

million track record

Most comprehensive power portfolio

in the market ensures always

best-fit

Pioneer in SiCtechnology andexpertise in allleading powertechnologies (Si, SiC, GaN-on-Si)

Infineon covers the full range from system understanding to manufacturing

Extensiveapplicationsystem under-standing andglobal support

Extensive system expertise Application-dedicated products

Unique power technology portfolio Benchmark in manufacturing


Industrial grade Automotive grade

CoolSiC™ MOSFET is available in integration levels for different fields of application

Bare dieDiscreteModule

Infineon offers CoolSiC™ solutions as chips, discretes and modules

Photovoltaic EV charging

UPS/ SMPS1) Traction

xEV (OBC)

1) UPS = uninterrupted power supply; SMPS = Switched-mode power supply

xEV (inverter)Drives


CoolSiC™ MOSFET - Revolution to rely on

Reliability and robustness assurance

Cost position


Performance

Volume manufacturing capability


BACK-UP


CoolSiC™ MOSFET roll-out

Portfolio

Easy 2B

62 mm

Easy 1B

Discrete &Easy 1B

2017: the roll-out starts

Chips

TO-247› 3-Pin device› 4-Pin device

Easy 1B› Sixpack› Booster › Halfbridge

Easy 2B› Halfbridge

62 mm› Halfbridge

Inverter power200kW2 kW

≥ 6 mΩ Rds(on)

≥ 8 mΩ Rds(on)

≥11 mΩ Rds(on)

≥ 45 mΩ Rds(on)

Sixpack new

new

new


1200 V CoolSiC™ MOSFET: Discrete portfolio extension 2018

On-resistance,RDSon [mOhm] TO247-3 TO247-4

45 IMW120R045M1 IMZ120R045M1

80 IMW120R080M1 IMZ120R080M1

120 IMW120R120M1 IMZ120R120M1

180 IMW120R180M1 IMZ120R180M1

280 IMW120R280M1 IMZ120R280M1

450 IMW120R450M1 IMZ120R450M1


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