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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FA
N73611 —
Sin
gle-C
han
nel H
igh
-Sid
e Gate D
rive IC
FAN73611 • Rev. 1.3
September 2015
FAN73611Single-Channel High-Side Gate Drive IC
Features Floating Channel for Bootstrap Operation to +600V
250 mA/500 mA Sourcing/Sinking Current Driving Capability
Common-Mode dv/dt Noise-Canceling Circuit
3.3 V and 5 V Input Logic Compatible
Output In Phase with Input Signal
Under-Voltage Lockout for VDD and VBS
8-Lead Small Outline Package (SOP)
Applications Electronic Ballast
Switching-Mode Power Supply (SMPS)
Related Application Notes
AN-6076 — Design and Applicaiton Guide of Boostrap Circuit for High-Voltage Gate-Drive IC
AN-9052 — Design Guide for Selection of Bootstrap Components
AN-8102 — Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver Applications
Description
The FAN73611 is a monolithic high-side gate drive ICthat can drive MOSFETs and IGBTs operating up to+600 V. Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable opera-tion of the high-side driver under high dv/dt noise circum-stances. An advanced level-shift circuit offers high-sidegate driver operation up to VS=-9.8 V (typical) forVBS=15 V. The UVLO circuits prevents malfunction whenVDD or VBS is lower than the specified threshold voltage.The output drivers typically source/sink 250 mA/500 mA;respectively, which is suitable for Plasma Display Panel(PDP) application, motor drive inverter, and switchingmode power supply applications.
Ordering Information
Note:
1. This device passed wave soldering test by JESD22A-111.
8-SOP
Part Number Package Operating Temperature Packing Method Description
FAN73611MX(1) 8 SOP -40°C ~ 125°C Tape & Reel Lighting Application
FA
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 2
Typical Application Diagrams
Figure 1. Step-Down (Buck) DC-DC Converter Application
Internal Block Diagram
Figure 2. Functional Block Diagram
DBOOT
C2
PWM
CBOOT
C1
D1
L1
15V
RBOOT
R2
FAN73611
VB
IN
GND
HO
VS
NC
NC
VDD
7
5
6
8
2
4
3
1
R1
VIN
VOUT
FAN73611 Rev.01
UVLO
PU
LS
EG
EN
ER
AT
OR
VDD
GND
IN
VB
HO
VS
RR
S Q
6
7
8
NOISECANCELLER
Pin 3 and 5 are no connection.
FAN73611 Rev.02
100K Sh
oo
t-th
rou
gh
cu
rren
t co
mp
en
sate
d g
ate
dri
ver
1
4
2
UVLO
FA
N73611 —
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rive IC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 3
Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin DefinitionsPin # Name Description
1 VDD Supply Voltage
2 IN Logic Input for High-Side Gate Driver Output
3 NC No Connection
4 GND Ground
5 NC No Connection
6 VS High-Voltage Floating Supply Return
7 HO High-Side Driver Output
8 VB High-Side Floating Supply
VS
VB
FAN73611
VDD
NC
IN HO
NC4GND
3
2
1
5
6
7
8
FAN73611 Rev.01
FA
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 4
Absolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Notes: 2. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material).
3. Refer to the following standards:JESD51-2: Integrated circuits thermal test method environmental conditions, natural convection, andJESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
4. Do not exceed power dissipation (PD) under any circumstances.
Recommended Operating ConditionsThe Recommended Operating Conditions table defines the conditions for actual device operation. Recommendedoperating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does notrecommend exceeding them or designing to absolute maximum ratings.
Symbol Characteristics Min. Max. Unit
VS High-Side Floating Offset Voltage VB-25 VB+0.3 V
VB High-Side Floating Supply Voltage -0.3 625.0 V
VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V
VDD Low-Side and Logic Supply Voltage -0.3 25.0 V
VIN Logic Input Voltage -0.3 VDD+0.3 V
dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns
PD Power Dissipation(2, 3, 4) 0.625 W
JA Thermal Resistance 200 C/W
TJ Junction Temperature -55 +150 C
TSTG Storage Temperature -55 +150 C
Symbol Parameter Min. Max. Unit
VB High-Side Floating Supply Voltage VS+10 VS+20 V
VS High-Side Floating Supply Offset Voltage 6-VDD 600 V
VHO High-Side Output Voltage VS VB V
VIN Logic Input Voltage GND VDD V
VDD Supply Voltage 10 20 V
TA Operating Ambient Temperature -40 +125 C
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N73611 —
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 5
Electrical Characteristics VBIAS(VDD, VBS) = 15.0 V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to
GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Dynamic Electrical Characteristics VDD=VBS=15 V, CLOAD=1000 pF, and TA=25°C, unless otherwise specified.
.
Symbol Characteristics Test Condition Min. Typ. Max. Unit
Power Supply Section
IQDD Quiescent VDD Supply Current VIN=0 V or 5 V, CLOAD=1000 pF 80 140 A
IPDD Operating VDD Supply CurrentCLOAD=1000 pF, fIN=20 KHz, RMS value
80 160 A
VDDUV+VBSUV+
VDD and VBS Supply Under-Voltage Positive Going Threshold Voltage
VDD=Sweep, VBS=Sweep 7.8 8.8 9.8 V
VDDUV-VBSUV-
VDD and VBS Supply Under-Voltage Nega-tive Going Threshold Voltage
VDD=Sweep, VBS=Sweep 7.3 8.3 9.3 V
VDDHYSVBSHYS
VDD and VBS Supply Under-Voltage Lockout Hysteresis Voltage
VDD=Sweep, VBS=Sweep 0.5 V
ILK Offset Supply Leakage Current VB=VS=600 V 10 A
IQBS Quiescent VBS Supply Current VIN=0 V or 5 V, CLOAD=1000 pF 60 100 A
IPBS Operating VBS Supply CurrentCLOAD=1000 pF, fIN=20 KHz, RMS Value
420 600 A
Input Logic Section
VIH Logic “1” Input Voltage 2.5 V
VIL Logic “0” Input Voltage 0.8 V
IIN+ Logic Input High Bias Current VIN=5 V 50 75 A
IIN- Logic Input Low Bias Current VIN=0 V 2 A
RIN Input Pull-Down Resistance 60 100 K
Gate Driver Output Section
VOH High Level Output Voltage (VBIAS - VO) No Load 0.1 V
VOL Low Level Output Voltage No Load 0.1 V
IO+ Output High, Short-Circuit Pulsed Current VHO=0 V, VIN=5 V, PW 10 µs 200 250 mA
IO- Output Low, Short-Circuit Pulsed Current VHO=15 V,VIN=0 V, PW 10 µs 400 500 mA
VSAllowable Negative VS Pin Voltage for IN Signal Propagation to HO
VBS=15 V -9.8 -7.0 V
Symbol Parameter Conditions Min. Typ. Max. Unit
ton Turn-On Propagation Delay Time VS=0 V 70 120 170 ns
toff Turn-Off Propagation Delay Time VS=0 V 70 120 170 ns
tr Turn-On Rise Time 70 140 ns
tf Turn-Off Fall Time 30 60 ns
FA
N73611 —
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 6
Typical Characteristics
Figure 5. Turn-On Propagation Delay vs. Temperature
Figure 6. Turn-Off Propagation Delay vs. Temperature
Figure 7. Turn-On Rise Time vs. Temperature Figure 8. Turn-Off Fall Time vs. Temperature
Figure 9. Quiescent VDD Supply Current vs. Temperature
Figure 10. Quiescent VBS Supply Current vs. Temperature
-40 -20 0 20 40 60 80 100 12070
90
110
130
150
170
t ON [n
s]
Temperature [°C]
-40 -20 0 20 40 60 80 100 12070
90
110
130
150
170
t OF
F [n
s]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1200
20
40
60
80
100
120
140
t R [n
s]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1200
10
20
30
40
50
60
t F
[ns]
Temperature [°C]
-40 -20 0 20 40 60 80 100 12020
40
60
80
100
120
140
I QD
D [A]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1200
20
40
60
80
100
I QB
S [A]
Temperature [°C]
FA
N73611 —
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 7
Typical Characteristics (Continued)
Figure 11. Operating VDD Supply Current vs. Temperature
Figure 12. Operating VBS Supply Current vs. Temperature
Figure 13. VDD UVLO+ vs. Temperature Figure 14. VDD UVLO- vs. Temperature
Figure 15. VBS UVLO+ vs. Temperature Figure 16. VBS UVLO- vs. Temperature
-40 -20 0 20 40 60 80 100 1200
20
40
60
80
100
120
140
160
I PD
D [A]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120250
300
350
400
450
500
550
600
I PB
S [A]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1207.0
7.5
8.0
8.5
9.0
9.5
10.0
VD
DU
V+ [V
]
Temperature [°C]-40 -20 0 20 40 60 80 100 120
7.0
7.5
8.0
8.5
9.0
9.5
10.0
V
DD
UV
- [V]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1207.0
7.5
8.0
8.5
9.0
9.5
10.0
VB
SU
V+ [V
]
Temperature [°C]-40 -20 0 20 40 60 80 100 120
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VB
SU
V- [V
]
Temperature [°C]
FA
N73611 —
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rive IC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 8
Typical Characteristics (Continued)
Figure 17. Logic HIGH Input Voltage vs. Temperature
Figure 18. Logic LOW Input Voltage vs. Temperature
Figure 19. Logic HIGH Input Bias Current vs. Temperature
Figure 20. Input Pull-Down Resistancevs. Temperature
Figure 21. High-Level Output Voltage vs. Temperature
Figure 22. Low-Level Output Voltage vs. Temperature
-40 -20 0 20 40 60 80 100 1201.0
1.5
2.0
2.5
3.0
VIH
[V]
Temperature [°C]-40 -20 0 20 40 60 80 100 120
0.5
1.0
1.5
2.0
2.5
3.0
VIL [V
]
Temperature [°C]
-40 -20 0 20 40 60 80 100 12025
35
45
55
65
75
I IN+ [A]
Temperature [°C]
-40 -20 0 20 40 60 80 100 12060
80
100
120
140
R
IN [
K]
Temperature [°C]
-40 -20 0 20 40 60 80 100 1200
20
40
60
80
100
VO
H [m
V]
Temperature [°C]-40 -20 0 20 40 60 80 100 1200
20
40
60
80
100
VO
L [m
V]
Temperature [°C]
FA
N73611 —
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rive IC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 9
Typical Characteristics (Continued)
Figure 23. Allowable Negative VS Voltage vs. Temperature
Figure 24. Allowable Negative VS Voltage vs. Supply Voltage
Figure 25. Turn-On Propagation Delay vs. Supply Voltage
Figure 26. Turn-Off Propagation Delay vs. Supply Voltage
Figure 27. Turn-On Rise Time vs. Supply Voltage Figure 28. Turn-Off Fall Time vs. Supply Voltage
-40 -20 0 20 40 60 80 100 120-13
-12
-11
-10
-9
-8
-7
VS [V
]
Temperature [°C]
10 12 14 16 18 20-16
-14
-12
-10
-8
-6
-4
VS [V
]
Supply Voltage [V]
10 12 14 16 18 2070
90
110
130
150
170
t ON [n
s]
Supply Voltage [V]
10 12 14 16 18 2070
90
110
130
150
170
t O
FF [n
s]
Supply Voltage [V]
10 12 14 16 18 200
20
40
60
80
100
120
140
t R [n
s]
Supply Voltage [V]
10 12 14 16 18 200
10
20
30
40
50
60
t F [n
s]
Supply Voltage [V]
FA
N73611 —
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 10
Typical Characteristics (Continued)
Figure 29. Quiescent VDD Supply Current vs. Supply Voltage
Figure 30. Quiescent VBS Supply Current vs. Supply Voltage
Figure 31. Operating VDD Supply Current vs. Supply Voltage
Figure 32. Operating VBS Supply Current vs. Supply Voltage
10 12 14 16 18 2020
40
60
80
100
120
140
I QD
D [A]
Supply Voltage [V]10 12 14 16 18 200
20
40
60
80
100
I QB
S [A]
Supply Voltage [V]
10 12 14 16 18 200
20
40
60
80
100
120
140
160
I PD
D [A]
Supply Voltage [V]
10 12 14 16 18 20250
300
350
400
450
500
550
600
I P
BS [A]
Supply Voltage [V]
FA
N73611 —
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rive IC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73611 • Rev. 1.3 11
Switching Time Definitions
Figure 33. Switching Time Test Circuit and Waveform Definitions
Figure 34. Floating Supply Voltage Transient Test
0.1µF
VB15V
HO
10µF
1nFFAN73611
10nF
15V
10µF
VDD
VS
GND
IN
FAN73611 Rev.02
IN
OUT
50%
90%
50%
tON
10%
tR tOFF tR
10%
90%
FAN73611 Rev.02
VB
OUTPUT MONITOR
HO
1000pF
FAN73611
0.1µF
15V
10µF VDD
VS
GND
IN
FAN73611 Rev.03
-Vs
GND
UF4007
0.1µF
5.60
1.27
1.75
0.65
1.851.35
0.250.10 0.51
0.31 (8X)
1.751.25
C
4.153.75
C 5.124.72
6.305.70
0.35
1.27PIN #1 ID
A
B
B
OPTION ABEVEL EDGE
0.250.15
OPTION BNON-BEVEL EDGE
1.04
0.25
0.800.30
8°4°
BEVELGAGE PLANE
SEATINGPLANE
R0.10
TOP VIEW
FRONT VIEW SIDE VIEW
LAND PATTERN RECOMMENDATION
NOTES: UNLESS OTHERWISED SPECIFIED
THIS PACKAGE CONFORMS TO JEDEC A. MS-012 VARIATION A EXCEPT WHERE NOTED.B. ALL DIMENSIONS ARE IN MILLIMETERS
C OUT OF JEDEC STANDARD VALUE
D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.E. LAND PATTERN AS PER IPC SOIC127P600X175-8MF. DRAWING FILENAME: MKT-M08Brev2
DETAIL "B"SCALE 2:1
C C
1 4
58
0.25 M C B A
0.10 C
www.onsemi.com1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.
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