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FUTURE WORK Efi Hadjixenophontos*, Guido Schmitz Heisenbergstrasse 3, 70569 Stuttgart GERMANY *Corresponding author: [email protected]; www.ecostore-itn.eu *Corresponding author: MgH 2 thin films as negative electrodes in Li-ion batteries Mg AND THERMODYNAMICS ION BEAM SPUTTERING RESULTS AND DISCUSSION CONCLUSIONS Metal targets (ø 80mm) were used Ion Beam Sputtering was used to produce thin films. Si (111) wafers served as substrates for films to be analyzed by XRD. Glass substrates will be used for samples dedicated to electrochemical measurements. INTRODUCTION Conversion reactions have emerged as an interesting alternative to the current intercalation mechanism of typical Li-ion batteries. Magnesium hydride (MgH 2 ) specifically, is a noteworthy material because of its dual use as both a hydrogen storage material and as a battery electrode. The MgH 2 reversible conversion reaction (MgH 2 + 2Li Mg + 2LiH) has good theoretical capacity (1480mAh/g) and takes place at ≈0.5V Li + /Li°, which makes it a great candidate for a negative electrode in Li-ion batteries. The following work is focused on characterizing MgH 2 thin films deposited with ion beam sputtering. Here we study Mg metal sputtered samples that are hydrogenated under 10bar pure hydrogen atmosphere and at 300° Electrochemical characterization with LiClO 4 as electrolyte will later be performed in conjunction with SEM, TEM and XRD measurements before and after cycling. Atom probe tomography measurements will also be investigated for informationon phase transformation. MgH 2 + 2 Li + + 2e - → 2 LiH + Mg E(vs. Li + /Li)= 0.44V Ion beam sputtering is a physical vapor process that we use to deposit thin film materials. The apparatus consists of: an ion source (Ar or O 2 gas), a target revolver which can hold up to four different materials a sample holder with the substrates that can be heated up to 700° Ionization of the gas is attained by a cathodic source. The ions are then accelerated, deflected and focused using high voltage. Finally, they are neutralized in a plasma before they hit the target. A major advantage of this technique is a completely field-free space around targets and substrates. It is possible to deposit layers from a monolayer to few μm in thickness, and it’s suitable for a broad range of materials. Reactive sputtering under oxygen, nitrogen or hydrogen atmosphere is easily performed. Metal Hydride Intercalation compound ANODE CATHODE charge discharge Li ELECTROLYTE 1 e- per Li+ U Sputtering conditions: Base pressure: 10 -7 mbar Working Pressure: 2*10 -4 mbar Acceleration voltage: 900V The research leading to these results has received funding from the European Marie Curie Actions under ECOSTORE grant agreement n° 607040 http ://www.ecostore-itn.eu ACKNOWLEDGMENTS FIELD ION MICROSCOPY (FIM) FIM techniques use the physical effect of high surface fields. Applying moderate voltages, enormous field strengths in the range of some 10 V/nm are easily obtained at the apex of nanometer sized tips. Fields of such magnitude could never be obtained in macroscopic scale geometries. In order to produce a filed ion micrograph an imaging gas (He) is necessary. Gas atoms are polarized and drawn toward the surface by inhomogeneous filed around the tip. Dissociation Pressure of MgH 2 ΔS MgH 2 = - 138 J/mol ΔH MgH 2 = -77400 KJ/mol Partial pressure of H 2 at RT = 5*10 - 4 mbar 0 20 40 60 80 100 120 0 1000 2000 3000 4000 5000 6000 7000 8000 * impurities * * * * Pd (111) Cu (111) MgH 2 (110) Intensity (counts) 2 theta (degree) MgH 2 (101) Diffusion of H 2 Cu substrate substrate Mg 400nm Pd 50nm Mg Cu substrate REFERENCES ΔG =107.9 kJ/mol H 2 pressure: 100 bar Time: 5 hours Temperature: 300° Samples where kept at same pressure while cooling down C H Substrate Surface Mg layer 66% atomic fraction MgH 2 Mg (H) Mg 400nm substrate Hydrogenation of Mg layers Hydrogenation of Mg at different times in order to see where saturation is reached Study further the effect of Pd as catalyst on Mg thin films Cycle electrochemical cells with hydrogenated Mg samples as electrodes and LiClO 4 electrolyte Atom probe tomography tests of hydrogenated samples MAIN OBJECTIVE Creation of MgH 2 layers with ion beam sputtering Pure Mg layers sputtered and hydrogenated under high pressure and temperature Study of the effect of hydrogenation time Investigation of Pd catalytic effect Field ion microscopy for studying the microstructure of the sputtered layers Preparation of samples for atom probe tomography measurements 1. Hydrogen diffusion and effect of grain size on hydrogenation kinetics in magnesium hydrides. X.Yao, 2008, J.Mater. Res Vol 23, No2, 2. A. San-Martin and F.D. Manchester, 1987 3. The Metal-Hydrogen system, Basic Bulk Properties, Y.Jukai 4. Diffusion in Solids, Fundamentals, Methods, Materials, Diffusion-Controlled Processes, Helmut Mehrer. Partial pressure of H 2 at room temperature is 5*10 -4 mbar. It is necessary to reach this pressure for hydrogenation of Mg thin film layers Hydrogenation of Mg layers at 10 bar and 300° shows promising results Longer time under H 2 atmosphere shifts the characteristic peak in XRD analysis, showing an increase of c lattice parameter Hydrogenation of Mg layers with Pd accelerates kinetics significantly and shows clear presence of MgH 2 Pd catalyzes the creation of MgH 2 layer Crystalline Mg layer is sputtered on W tips of ≈ 50nm TEM images of field ion microscopy tips show the presence of crystalline Mg metal layer deposited, and W oxide of the tip Hydrogenation time (min) lattice parameters α = β c 0 3.209 5.210 200 3.126 5.414 400 3.130 5.422 800 3.135 5.430 200 min 400 min 800 min H 2 pressure: 10 bar Time: 5 hours Temperature: 300° Pure Mg (0 min) Peak shift during hydrogenation Mg layer 200nm needs about 10hours to hydrogenate At 300°and 1 bar atm Increasing hydrogenation time increases content of H 2 in the layer Diffusion of H 2 in Mg at 300° is ≈ 10 - 18 m 2 /s Phase diagram Mg/H (2) Creation of MgH 2 on the surface of the layer C C. C C C C C Ion beam sputtering deposition Magnetron sputtering deposition Hydrogenation TEM and EDX Measurements of FIM tips NO Pd WITH Pd Theoritical MgH 2 A typical field ion microscope consists of: an ultra-high vacuum chamber a specimen stage holding the tip a viewing screen with the capability of imaging the ion impacts a cryostat is to cool the tip down to 50 K in order to reduce the effect of thermal energies high positive voltage is applied between the metallic tip and the microchannel plates He gas atmosphere as imaging gas 18% volume expansion along the c axis of the thin film layer Hydrogenation 800 min
Transcript
Page 1: 0) - Hereon

FUTURE WORK

Efi Hadjixenophontos*, Guido Schmitz

Heisenbergstrasse 3, 70569 Stuttgart GERMANY*Corresponding author: [email protected]; www.ecostore-itn.eu

*Corresponding author: [email protected]

MgH2 thin films as negative electrodes in Li-ion batteries

Mg AND THERMODYNAMICS

ION BEAM SPUTTERING

RESULTS AND DISCUSSION

CONCLUSIONS

Metal targets (ø 80mm) were used

Ion Beam Sputtering was used to produce thin films. Si (111)wafers served as substrates for films to be analyzed by XRD.Glass substrates will be used for samples dedicated toelectrochemical measurements.

INTRODUCTION

Conversion reactions have emerged as an interesting alternative to the currentintercalation mechanism of typical Li-ion batteries. Magnesium hydride (MgH2)specifically, is a noteworthy material because of its dual use as both a hydrogenstorage material and as a battery electrode. The MgH2 reversible conversionreaction (MgH2 + 2Li Mg + 2LiH) has good theoretical capacity (1480mAh/g) andtakes place at ≈0.5V Li+/Li°, which makes it a great candidate for a negativeelectrode in Li-ion batteries. The following work is focused on characterizing MgH2

thin films deposited with ion beam sputtering. Here we study Mg metal sputteredsamples that are hydrogenated under 10bar pure hydrogen atmosphere and at300° Electrochemical characterization with LiClO4 as electrolyte will later beperformed in conjunction with SEM, TEM and XRD measurements before and aftercycling. Atom probe tomography measurements will also be investigated forinformationon phase transformation.

MgH2 + 2 Li+ + 2e- → 2 LiH + Mg E(vs. Li+/Li)= 0.44V

Ion beam sputtering is a physical vapor process that we use to deposit thin film materials.The apparatus consists of:• an ion source (Ar or O2 gas),• a target revolver which can hold up to four different materials• a sample holder with the substrates that can be heated up to 700°Ionization of the gas is attained by a cathodic source. The ions are then accelerated, deflected and focused using high voltage.Finally, they are neutralized in a plasma before they hit the target. A major advantage of this technique is a completely field-freespace around targets and substrates. It is possible to deposit layers from a monolayer to few μm in thickness, and it’s suitablefor a broad range of materials. Reactive sputtering under oxygen, nitrogen or hydrogen atmosphere is easily performed.

Metal Hydride Intercalation compound

ANODE CATHODE

charge

discharge

Li ELECTROLYTE1 e- per Li+

U

Sputtering conditions: Base pressure: 10-7 mbarWorking Pressure: 2*10-4 mbarAcceleration voltage: 900V

The research leading to these results has received funding from theEuropean Marie Curie Actions under ECOSTORE grant agreement n°607040 http://www.ecostore-itn.eu

ACKNOWLEDGMENTS

FIELD ION MICROSCOPY (FIM)

FIM techniques use the physical effect of high surface fields. Applying moderate voltages, enormous fieldstrengths in the range of some 10 V/nm are easily obtained at the apex of nanometer sized tips. Fields ofsuch magnitude could never be obtained in macroscopic scale geometries. In order to produce a filed ionmicrograph an imaging gas (He) is necessary. Gas atoms are polarized and drawn toward the surface byinhomogeneous filed around the tip.

• Dissociation Pressure of MgH2

ΔS MgH2= - 138 J/molΔH MgH2= -77400 KJ/mol

Partial pressure of H2 at RT = 5*10-4 mbar

0 20 40 60 80 100 120

0

1000

2000

3000

4000

5000

6000

7000

8000

* impurities

*

** *

Pd

(111)

Cu

(111)

MgH2

(110)

Inte

nsity (

cou

nts

)

2 theta (degree)

MgH2

(101)

• Diffusion of H2

Cusubstrate

substrate

Mg 400nm

Pd 50nm

Mg

Cusubstrate

REFERENCES

ΔG =107.9 kJ/mol

H2 pressure: 100 barTime: 5 hours

Temperature: 300°Samples where kept at same pressure

while cooling down

C H

SubstrateSurface

Mg layer66% atomic

fraction

MgH2

Mg (H)

Mg 400nmsubstrate

• Hydrogenation of Mg layers

Hydrogenation of Mg at different times in order to see where saturation is reached

Study further the effect of Pd as catalyst on Mg thin films

Cycle electrochemical cells with hydrogenated Mg samples as electrodes and LiClO4 electrolyte

Atom probe tomography tests of hydrogenated samples

MAIN OBJECTIVE• Creation of MgH2 layers with ion beam sputtering• Pure Mg layers sputtered and hydrogenated under high pressure and temperature• Study of the effect of hydrogenation time• Investigation of Pd catalytic effect• Field ion microscopy for studying the microstructure of the sputtered layers• Preparation of samples for atom probe tomography measurements

1. Hydrogen diffusion and effect of grain size on hydrogenation kinetics in magnesiumhydrides. X.Yao, 2008, J.Mater. Res Vol 23, No2,

2. A. San-Martin and F.D. Manchester, 19873. The Metal-Hydrogen system, Basic Bulk Properties, Y.Jukai4. Diffusion in Solids, Fundamentals, Methods, Materials, Diffusion-Controlled Processes,

Helmut Mehrer.

Partial pressure of H2 at room temperature is 5*10-4 mbar. It is necessary to reach this pressure for hydrogenation of Mg

thin film layers

Hydrogenation of Mg layers at 10 bar and 300° shows promising results

Longer time under H2 atmosphere shifts the characteristic peak in XRD analysis, showing an increase of c lattice parameter

Hydrogenation of Mg layers with Pd accelerates kinetics significantly and shows clear presence of MgH2

Pd catalyzes the creation of MgH2 layer

Crystalline Mg layer is sputtered

on W tips of ≈ 50nm

TEM images of field ion microscopy tips show the presence of crystalline Mg metal layer deposited, and W oxide of the tip

Hydrogenation time (min)

lattice parametersα = β c

0 3.209 5.210200 3.126 5.414400 3.130 5.422800 3.135 5.430

200

min

400

min

800

min

H2 pressure: 10 barTime: 5 hours

Temperature: 300°

Pure Mg

(0 min)

Peak shift during hydrogenation Mg layer 200nm needs about

10hours to hydrogenate

At 300°and 1 bar atm

Increasing hydrogenation time increases content of H2 in the layer

Diffusion of H2 in Mg at 300° is ≈ 10-18 m2/s

• Phase diagram Mg/H(2)

Creation of MgH2 on the surface of the layer

C

C.

C

C

C

C

C

Ion beam sputtering deposition

Magnetron sputtering deposition

Hydrogenation

• TEM and EDX Measurements of FIM tips

NO Pd

WITH Pd

Theoritical MgH2

A typical field ion microscope consists of:• an ultra-high vacuum chamber• a specimen stage holding the tip• a viewing screen with the capability of imaging the ion

impacts• a cryostat is to cool the tip down to 50 K in order to

reduce the effect of thermal energies• high positive voltage is applied between the metallic tip

and the microchannel plates• He gas atmosphere as imaging gas

18% volume expansionalong the c axis of the thin film layer

Hydrogenation

800 min

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