111017 ham news-02-2011 RZ · 4 News 2011 Vol. 2 Company News Hamamatsu Photonics has completed the...

NEWS 2011

02

Universal Streak CameraC10910

SYSTEMS PRODUCTS PAGE 27

Mid-Infrared Quantum Cascade Lasers

LASER PRODUCTS PAGE 18

Xenon Flash Light Source LF2L11729, L11730

ELECTRON TUBE PRODUCTS PAGE 23

SOLID STATE PRODUCTS PAGE 06

High-sensitivity dual-element detectors ideal for gas analysis applications

Content

Highlights

News 2011 Vol. 22

ELECTRON TUBE PRODUCTS 23 Xenon Flash Light Source LF2

LASER PRODUCTS 18 Mid-Infrared Quantum Cascade Lasers

SYSTEMS PRODUCTS 27 Universal Streak Camera C10910

04 Company News

SOLID STATE PRODUCTS

06 Thermopile Detectors T11262-01, T11722-01

08 InGaAs Area Image Sensors G11097 Series

10 CCD Image Sensors S11850/1-1106

11 CMOS Area Image Sensors S11661, S11662

12 High Power Red LED L11767

13 InAsSb Photovoltaic Detector P11120-201

14 InGaAs PIN Photodiode G11777-003P

15 Si APD S10341 Series

16 Back-Illuminated Photodiode Arrays

S11212, S11299 Series

LASER PRODUCTS

18 Quantum Cascade Lasers L12004-2190H-C,

L12007-1294H-C, L12017-1278T-C

ELECTRON TUBE PRODUCTS

20 Low Temperature Operation Photomultiplier

Tube R11410-10

21 High Voltage Power Supplies C10940 Series

22 UV Power Meter C10427, H10428

23 Xenon Flash Light Source LF2 L11729, L11730

24 20 W Xenon Flash Lamps L119XX Series

26 Photoionizer L11757

SYSTEMS PRODUCTS

27 Universal Streak Camera C10910

28 X-ray Excited Lifetime Fluorospectrometer

PicoXspeC

30 InGaAs Camera C8250-31

31 PV Imaging System EPLi

32 Application Software Hipic 9.1

SERVICE

33 Fax Reply

34 Exhibitions 2011 / 2012

35 Hamamatsu Photonics Europe

XX

News 2011 Vol. 2 3

XX

News 2011 Vol. 2 33News 2011 Vol. 2

Hamamatsu News – now also online!As a new service we are now making our customer magazine available for you to browse conveniently online. We hope that you will enjoy this innovative format and will read both the latest and past issues with interest.

www.hamamatsu-news.eu

Hamamatsu completes renovations at its new facility for opto-semiconductor assembly

News 2011 Vol. 24

Company News

Hamamatsu Photonics has completed the renovation of buildings No. 1 and No. 3 at the Shingai Factory, Hamamatsu City, Japan. This factory is dedicated to the post-process assembly of opto-semiconductors handled by the Solid State Division of Hamamatsu Photonics. The opening and unveiling ceremony was held on July 12, 2011 and operations at the factory began on the 1st August.

The Solid State Division of Hamamatsu Photonics manufactures a wide variety products, most of which are in small quantities. Since this requires a large number of different equipment and machines for production, the Mitsue Factory (Mitsue, Iwata City, Japan; fl oor space of 26,268 square meters) that handles post-process assembly (annual production capability of approximately 60 million units) became hard-pressed for space. This led to acquisition of the Shingai Factory in July of last year in order to expand production capability.

In addition to the ever tougher standards for high performance, high quality and miniaturisation, the Solid State Division must also meet customer demands for low-cost products. The new Shingai Factory was rated as fully capable of handling mass production needs for assembly

of low-cost products to satisfy customer price needs, and so mass-production of some products will be shifted there from the Mitsue Factory. Products shifting over to the new plant will include photo IC and LED for general electronic equipment and offi ce machines, as well as silicon photodiodes for X-ray non-destructive inspection, rotary encoders and FA (factory automation).

The annual production volume for these opto-semiconductor devices is predicted to reach some 20 million units for the fi rst year, produced by a workforce of about 60 employees. The Mitsue Factory, on the other hand, will serve mainly as an assembly plant for a high-variety of low-volume, high-precision, high-density, value-added products such as receiver devices for optical communication, image sensors and silicon photodiodes for X-ray CT scanners. Work on developing new production technologies including assembly technology, production process design and production equipment design is also being carried out at the same time.

In Summer 2012, the Shingai Factory is also scheduled to start production of transmitter / receiver devices for MOST (Media Oriented

Shingai Factory

News 2011 Vol. 2 5

China sales subsidiary

In regards to business with China, Hamamatsu Photonics received a request from China to render technical assistance, which led to our establishing BEIJING HAMAMATSU PHOTON TECHNIQUES INC. in 1988. BEIJING HAMAMATSU serves as a production and sales base for photomultiplier tubes, etc. and currently has annual sales of 130 million yuan (about 1.65 billion Japanese yen: hereafter fi gured at 13 yen per yuan) in the domestic Chinese market.

On the other hand, our direct business with China has increased and resulted in annual sales of approximately 230 million yuan (about 3 billion Japanese yen), and demand in the Chinese market continues to grow. The reasons for this trend are that the customers in the US and Europe have, over the last few years, been establishing their production bases in China and are now starting to set up low-cost product development bases to meet the domestic demand in China and also that Chinese companies are beginning to grow.

These circumstances have created the need for sales and technical support to meet customer requirements, which led to our establishing sales subsidiaries in China. We also have plans to setup a development system to respond to product needs in China.

System Transport) high-speed in-vehicle LAN standards employed in European luxury cars. The MOST standards use plastic optical fi bers that offer light weight and high-speed data transmission with a higher resistance to noise compared to metal wire harnesses. This will help vehicles use more information and reduce the weight of components. The MOST standards are expected to spread to many car models in future years and is likely to lead to highly expanded sales. Building No. 3 is expected to ship some 50 million units a year which is half its annual production capacity of 100 million units.

To handle future expanded sales, other structures can be added at the Shingai Factory to boost production to the same level as Building No. 3. The boost in production capacity in the post-process assembly from

adding these new building facilities is predicted to hike consolidated sales by 1.5 times to 60 billion yen. Another step taken by the Solid State Division to boost sales is the development of easy-to-use modules that integrate opto-semiconductor devices with circuits and power supplies into a compact package.

Developing modules including, for example, MPPC modules for radiation medical equipment, distance measurement modules, and spectrophotometric modules, is expected to increase the sales ratio of module products from the current 5 % to approximately 30 %. Developing these highly competitive products has allowed the Solid State Division to keep 100 % of its production in Japan.

Hamamatsu China


News 2011 Vol. 26

Thermopile DetectorsT11262-01, T11722-01

High sensitivity infrared sensors

The new T11262-01 and T11722-01 are high sensitivity thermopile sensors specifi cally designed for gas analysis applications.

The T11262-01 is a single element detector housed in a compact TO-18 package with high sensitivity across the 3 to 5 µm spectral band.

The T11722-01 is a dual-element thermopile detector housed within a TO-5 package. The T11722-01 features two bandpass fi ltered windows for measuring two wavelengths simultaneously. These windows transmit at 3.9 µm for a reference signal and 4.3 µm for CO2 detection.

Features High sensitivity High D*: 1.3 x 108 cm·Hz½ / W Simultaneous dual wavelength sensing (T11722-01)

Author: Richard Harvey, Hamamatsu Photonics UK

Parameter Single Dual 1D array 2D arrayPackage TO-18 TO-5 fl at, 16-pin 68-LCC

Number of elements 1 2 16 32 8 × 8

Window material Silicon with AR coating With band-pass fi lter With 5 µm long-pass fi lter With 5 µm long-pass fi lter

Spectral response range 3 to 5 µm 3.9 µm / 4.3 µm 5 to 14 µm 5 to 14 µm

Applications Gas analysis, etc. Temperature measurement,Human detection

Type no. T11262-01 T11722-01 Coming soon Coming soon

HAMAMATSU line-up of thermopiles


7News 2011 Vol. 2

Thermopile (single element) T11262-01

Features High sensitivity in 3 to 5 µm spectral band TO-8 package

Thermopile (dual elements)T11722-01

Features Simultaneous dual wavelength sensing TO-5 package with two windows

(transmission: 3.9 µm for REF / 4.3 µm for CO2 detection)

Specifi cations (Typ. Ta=25 deg. C.) Spectral transmittance characteristics of window material

Specifi cations (Typ. Ta=25 deg. C.)

Parameter Condition Value Unit

Active area 1.2 × 1.2 mm2

Spectral response range 3 to 5 µm

Photo sensitivity 1 Hz, 500 K 50 V / W

Element resistance 125 kΩ

Noise voltage Johnson noise 45 nV / Hz1/2

Noise equivalent power 0.9 nW / Hz1/2

Detectivity 1.3 × 108 cm·Hz1/2 / W

Rise time 0 to 63 % 20 ms

Temperature resistant ofelement resistance

+ / - 0.1 % / deg. C.

Field of view Photo sensitivity 50 % 90 degrees

Parameter Condition Value Unit

Active area Absorption fi lm size 1.2 × 1.2 mm2

Spectral response range Bandpass fi lterREF: 3.9 µm / CO2: 4.3 µm

µm

Photo sensitivity 1 Hz, 500 K 50 V / W

Element resistance 125 kΩ

Noise voltage Johnson noise 45 nV / Hz1/2

Noise equivalent power 0.9 nW / Hz1/2

Detectivity 1.3 × 108 cm .Hz1/2 / W

Rise time 0 to 63 % 20 ms

Temperature resistant ofelement resistance

+ / - 0.1 % / deg. C.

Applications Gas analysis, etc.

Applications Gas analysis, etc.

Tran

smitt

ance

(%)

Tran

smitt

ance

(%)

Wavelength (µm)

100

90

80

70

60

50

40

30

20

10

03 3.5 4 4.5 5

Spectral transmittance characteristics of window material

Wavelength (µm)

100

90

80

70

60

50

40

30

20

10

0 3 3,5 4 4,5 5


News 2011 Vol. 28

InGaAs Area Image SensorsG11097 series

Excellent linearity and high sensitivity

The new G11097-0606S and G11097-0707S InGaAs area sensors are 64 x 64 pixel and 128 x 128 pixel arrays respectively, with a 50 µm pitch utilising CMOS readout circuitry. Featuring high sensitivity in the near infrared region these sensors are ideal for thermal imaging, laser beam profi ling and general near infrared imaging applications.

The G11097-0606S and G11097-0707S are simple to operate, requiring only a Master Start pulse and Master Clock voltages from external sources, to provide an analogue video output.

The G11097-0606S is hermetically sealed in a TO-8 package whilst the G11097-0707S is housed in a 28-pin metal package. Both include a one-stage thermoelectric cooler to deliver highly stable operation with reduced noise.

Features Spectral response range: 0.95 to 1.7 µm Excellent linearity by offset compensation High sensitivity: 1600 nV / e- Simple operation One-stage TE cooled

Applications Thermal imaging Near infrared imaging Laser beam profi ling


G11097-0606S

G11097-0707S

Spectral response (Typ. Ta=25 deg. C.)

Phot

o se

nsiti

vity

(A / W

)

Wavelength (µm)

1.0

0.8

0.6

0.4

0.2

00.8 1.0 1.2 1.4 1.6 1.8

Spectral response

KMIRB0051EB

Phot

o se

nsiti

vity

(A/

W)

Wavelength (µm)

1.0

0.8

0.6

0.4

0

0.2

0.8 1.0 1.2 1.4 1.6 1.8

(Typ. Ta=25 °C)


9News 2011 Vol. 2

Dimensional outline G11097-0707S (Unit: mm)

1 2 14

28 15

10.2

± 0

.15

25.4

± 0

.15

22.9

± 0

.15

63.5 ± 0.15

Dimensional outline (G11097-0707S, unit: mm)

KMIRA0026EA

53.3 ± 0.15

38.1 ± 0.15

19.0 ± 0.3

20.3

± 0

.15

(28 ×)2.54

(28 ×) 0.46

14.9

± 0

.2

19.0

± 0

.3

14.9 ± 0.22.54

1.0

± 0

.2

6.9

± 0

.3

4.10

± 0

.3

Photosensitive area*

R 1.59

* The center position of the photosensitive area is the same as that of the package.

Parameter Symbol Condition G11097-0606S G11097-0707S UnitSpectral response range λ 0.95 to 1.7 µm

Peak sensitivity wavelength λp 1.55 µm

Photo sensitivity S λ=λp 0.8 A / W

Conversion effi ciency CE Cf=0.1 pF 1,600 nV / e-

Saturation charge Qsat 1.25 1.3 Me-

Saturation output voltage Vsat 2 V

Photo response non-uniformity*1 PRNU After subtractingdark current,Integration time 5 ms

±10 %

Dark voltage VD 20 V / s

Dark current ID 2 pA

Dark signal non-uniformity DSNU 20 V / s

Readout noise Nr Integr. time 10 ms 600 µV rms

Dynamic range DR 3,300 -

Defective pixel*2 max. - 1 %

Electrical and optical characteristics (Element temperature=25 deg. C., Typ. Ta=25 deg. C., Vdd=5 V, PD_bias=4.5 V)

*1: Measured at one-half of the saturation, excluding fi rst and last pixels.*2: Pixels with photo response non-uniformity (integration time 5 ms), readout noise or dark current higher than the maximum value. One or less cluster of four or more contiguous detective pixels.


News 2011 Vol. 210

CCD Image SensorsS11850-1106, S11851-1106

CCDs with improved etaloning characteristics in the infrared region

The S11850-1106 and S11851-1106 image sensors are back-thinned CCDs designed for spectroscopy applications.

Previously, back-thinned CCDs have exhibited problems of etaloning in the near infrared region, which is problematic in applications such as Raman spectroscopy. However, the new improved S11850-1106 and S11851-1106 CCDs have been specifi cally designed to reduce this etaloning effect, making them suitable for a wider range of applications.

The S11850-1106 is a low noise sensor with just 6e-x rms readout noise at -40 deg. C., whilst the S11851-1106 is a high speed sensor with a readout speed of 5 MHz. Both feature improved etaloning characteristics and offer a nearly fl at spectral response, with high quantum effi ciency, from the UV to near infrared regions.

Both the S11850-1106 and S11851-1106 feature built-in TE coolers to maintain sensor temperature during operation.

Features Improved etaloning characteristics High sensitivity over a wide spectral range High full well capacity and wide dynamic range Pixel size: 14 x 14 µm

Applications Spectrometers


S11850-1106 and 11851-1106 CCD image sensors

Spectral response (without window)*1 (Typ. Ta=25 deg. C.)Q

uant

um e

ffi cie

ncy

(%)

Wavelength (nm)

* 1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material.

100

80

60

40

20

0

200 400 600 800 1000 1200

Rela

tive

sens

itivi

ty (%

)

Wavelength (nm)

Etaloning is an interference phenomenon that occurs when the light incident on a

CCD repeatedly refl ects between the front and back surfaces of the CCD while being

attenuated, and causes alternately high and low sensitivity. When long-wavelength

light enters a backthinned CCD, etaloning occurs due to the relationship between

the silicon substrate thickness and the absorption length. The backthinned CCDs

(S11850 / S11851-1106) have achieved a signifi cant improvement in etaloning by

using a unique structure that is unlikely to cause interference.

Etaloning-improved type

Previous type

Improved etaloning characteristics

900 920 940 960 980 1000

100

80

60

40

20

0


11News 2011 Vol. 2

CMOS Area Image SensorsS11661, S11662

Active pixel CMOS image sensors

The S11661 and S11662 are APS (active pixel sensor) type CMOS area image sensors with high sensitivity in the near infrared region. The S11661 is an SXGA format sensor (1280 × 1024 pixels) whilst the S11662 is VGA format (640 × 480 pixels).

Both the S11661 and S11662 include a timing generator circuit, a bias generator circuit, an AD converter and offer digital input / output for easy handling. Two different readout modes, global shutter and rolling shutter, can be selected.

High-speed partial readout is also possible by reducing the number of vertical pixels or horizontal pixels to be read out.

Features Pixel size: 7.4 x 7.4 µm Rolling and global shutter readout 3.3 V single power supply operation High IR sensitivity

Applications Infrared camera Position detection Shape recognition


Phot

o se

nsiti

vity

(x 1

012 V

/ W-s

)

Wavelength (nm)

50

40

30

20

10

0

S11661 and S11662 CMOS area image sensors

Spectral response (typical example)

200 400 600 800 1000 1200

Conventional type

Near IR-enhanced typeS11661, S11662


News 2011 Vol. 212

High Power Red LEDL11767

High reliability in a compact package

The new L11767 High Power Red LED features double the radiant output power of its predecessor, achieving greater than 13 mW radiant fl ux at 670 nm.

Additionally, to achieve the same brightness as its predecessor, the new L11767 LED features a reduction in power consumption of up to 70 %. By using an improved structure for the LED chip, the reliability of the L11767 has also been greatly improved.

The high reliability and high output power of the L11767 makes it ideal for optical switches and spectrophotometry, as well as foreign matter screening. The compact size (5.4 mm Ф, 2.3 mm height) of the L11767 will save space in equipment where assembly space is critical, making it an attractive alternative to conventional lamps.

Features High radiant output power: 13 mW Emission wavelength: 670 nm High reliability

Applications Optical switches Foreign matter screening


L11767 High Power Red LED

Emission spectrum (Typ. Ta=25 deg. C., IF=20 mA)

Rela

tive

light

out

put (

%)

Wavelength (nm)

100

80

60

40

20

0

600 620 640 660 680 700

Parameter Symbol Condition Min. Typ. Max. UnitPeak emission wavelength λp IF=20 mA 650 660 670 nm

Spectral half-width Δλ IF=20 mA - 18 30 nm

Forward voltage VF IF=20 mA - 2.1 2.5 V

Reverse current IR VR=5 V - - 20 µA

Radiant fl ux Φe IF=20 mA 10 13 - mW

Cut-off frequency*1 fc IF=20 mA ± 1 mAp-p 3 6 - MHz

Electrical and optical characteristics (Typ. Ta=25 deg. C.)

*1: Frequency at which the light output drops by 3 dB relative to the output at 100 kHz.


13News 2011 Vol. 2

InAsSb Photovoltaic DetectorP11120-201

TE cooled detector for the 5 µm spectral band

Hamamatsu continue their developments into Indium Arsenide Antimonide (InAsSb) detectors and introduce the new P11120-201. The new detector provides peak sensitivity at 4.9 µm and operates up to 5.9 µm with an impressive D* of 5 x 109. The InAsSb photodiode used in the P11120-201 has a planar structure and photovoltaic operation, which ensures a high speed response, excellent linearity and high reliability.

Unlike other InAsSb detectors in the existing range, the new P11120-201 does not require LN2 cooling but instead uses a TE cooler at -30 deg. C. The whole package is mounted in a compact TO-8 package. The P11120-201 is suited to applications including gas analysis with the detector covering a wide range of molecular absorption wavelengths, in particular for CO2, SOx, CO and NOx. The P11120-201 is also ideally suited for applications in industrial inspection, thermometry (radiometry), thermal imaging, remote sensing, FTIR and IR spectrophotometry.

Features High speed and high sensitivity High reliability TE cooled package Environmentally friendly Suitable for use with QCLs (Quantum Cascade Lasers)

Applications Gas analysis Radiation thermometers Remote sensing FTIR Spectrophotometry


P11120-201 InAsSb photovoltaic detector

Spectral response (D*) (Typ. Ta=-30 deg. C.)

D* (c

m ·

Hz1/

2 / W

)

1011

1010

109

108

C-H type CO NOXCO2, SOX

Parameter Symbol Condition Min. Typ. Max. UnitPeak sensitivity wavelength λp 4.0 4.9 - µm

Cut-off wavelength λc 5.6 5.9 - µm

Photo sensitivity S λ=λp 0.8 1.6 - A / W

Shunt resistance Rsh VR=10 mV 10 13 - Ω

Detectivity D* (λp, 600, 1) 3.5 × 109 5.0 × 109 - cm·Hz1/2 / W

Noise equivalent power NEP λ=λp - 1.8 × 10-11 2.5 × 10-11 W / Hz1/2

Rise time tr VR=0 V, RL=50 Ω0 to 63 %

- 0.2 - µs

Electrical and optical characteristics

1 2 3 4 5 6

Wavelength (µm)


News 2011 Vol. 214

InGaAs PIN PhotodiodeG11777-003P

New COB package IR diode

Hamamatsu are pleased to introduce a new low cost, chip on board (COB) packaged InGaAs PIN photodiode, the G11777-003P. Featuring the same high sensitivity diode mounted in a CAN package used in the G8376-03, but with 98.5 % reduction in volume allowing for low cost mass production. The COB package is suitable for refl ow soldering.

The G11777-003P features high sensitivity at 1.55 µm and with a 500 MHz cut-off frequency this product is suitable for lightweight optical communications.

Features 1.55 µm Peak sensitivity COB package Mass production, low cost 500 MHz cut-off

Applications Optical communications NIR photometry

Author: Robin Smith, Hamamatsu Photonics UK

Parameter Symbol Condition Min. Typ. Max. UnitSpectral Response Range λ at 10 % of peak - 0.9 to 1.7 - µm

Peak Sensitive Wavelength λp - 1.55 - µm

Photo Sensitivity Sλ=1.3 µm 0.70 0.85 -

A / Wλ=1.55 µm 0.75 0.95 -

Shunt Resistance Rsh VR=10 mV - 700 - MΩ

Dark Current ID VR=5 V - 100 800 pA

Detectivity D* λ=λp - 5E+12 - cm√Hz / W

NEP λ=λp - 5E-15 - W / √Hz

Terminal Capacitance Ct VR=5 V, f=1 MHz - 6 - pF

Cut-off Frequency fc VR=5 V, RL=50 Ω - 500 - MHz


Spectral response (Typ. Ta=25 deg. C.)

Phot

o se

nsiti

vity

(mA

/ W)

1200

1000

800

600

400

200

0

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9

Wavelength (µm)

G11777-003P InGaAs PIN Photodiode


15News 2011 Vol. 2

Si APDS10341 Series

Low bias voltage operation for 800 nm band

The S10341 series is a new product in Hamamatsu’s range of APDs. Operating at a low bias voltage the S10341 series is designed to measure near infrared light in the 800 nm region. The miniature and thin package allows for versatility when mounting the products and also makes the product a low cost alternative to standard packaged APDs.

The series features two different active areas 0.2 mm and 0.5 mm diameter.

Features Small package size Stable operation at low bias voltage High-speed response High sensitivity Low noise

Applications

Optical rangefi nder Laser radar FSO (free space optics)


Parameter Symbol ConditionS10341-02 S10341-05

UnitMin. Typ. Max. Min. Typ. Max.

Spectral Response Range λ - 400 to 1,000 400 to 1,000 nm

Peak Sensitive Wavelength λp M=100 - 800 - - 800 - nm

Photo Sensitivity S λ=800 nm, M=1 - 0.5 - - 0.5 - A / W

Quantum effi ciency QE λ=800 nm, M=1 - 75 - - 75 - %

Breakdown voltage VBR ID=100 µA - 150 200 - 150 200 V

Temperature coeffi cient of VBR - - - 0.65 - - 0.65 - V / deg. C.

Dark current ID M=100 - 50 500 - 100 100 pA

Cut-off frequencyfc M=100, RL=50 Ω

λ =800 nm, -3 dB- 1,000 - - 900 - MHz

Terminal capacitance Ct M=100, f=1 MHz - 1 - - 2 - pF

Excess noise fi gure x M=100 - 0.3 - - 0.3 - -

Gain M λ=800 nm - 100 - - 100 - -


Spectral response (Typ. Ta=25 deg. C., λ =800 nm)

Phot

o se

nsiti

vity

(A / W

)

50

40

30

20

10

0

200 400 600 800 1000

Wavelength (nm)

S10341 series

M=50

M=100


News 2011 Vol. 216

Back-Illuminated Photodiode ArraysS11212 Series, S11299 Series

Photodiode arrays for X-ray non-destructive inspection

Hamamatsu introduce two brand new ranges of back-illuminated 16 channel photodiode arrays (PDA), designed for use in X-ray non-destructive inspection applications. The S11212 and S11299 series uses fl ip-chip technology that allows the PDA to receive scintillation light from the back side of the array. This fl ip-chip approach reduces the need for gold bond wires and junction layers on the light input side, vastly reducing the risk of wire bond damage during scintillator mounting.

The S11299 uses a narrow package allowing it to be easily combined with the S11212 for dual energy imaging. By combining two arrays with differing scintillator thicknesses in a vertical structure, high and low energy X-rays can be imaged. Various confi gurations can be designed to match any application requirement. This new series of PDAs is set to make a large improvement to X-ray non-destructive testing applications especially baggage scanning.

Features Back-illuminated structure Element size: 1.175 mm (W) x 2.0 mm (H) per element Element pitch: 1.575 mm (x 16 pixels) Supports dual energy imaging

Applications X-ray non-destructive inspection


S11212 photodiode arrays series

S11299 photodiode arrays series

Cross-section diagram (comparison between front-illuminated type and back-illuminated type)

X-ray

Protective resin

Active areaBonding wire

Front-illuminated type(previous product) Scintillator

Photodiode

X-ray

Photodiode

Back-illuminated type(New)

Bump electrode

Scintillator

Active area


17News 2011 Vol. 2

Superb uniformityOur unique sensor design minimises variations in sensitivity betweenphotodiode elements as well as at the sensor ends. The S11212 / S11299 series offers signifi cantly improved sensitivity uniformity compared to our previous product (S5668 series) and therefore provides optimal X-ray images.

Spectral response characteristics of the S11212 / S11299-121 / -321 / -421 include the transmittance and refl ectance of the adhesive resin used to bond a scintillator.

Spectral response (characteristics without scintillator) (Typ. Ta=25 deg. C.) Uniformity (Typ. Ta=25 deg. C.)

Phot

o se

nsiti

vity

(A / W

)

Rela

tive

sens

itivi

ty (%

)

Wavelength (nm)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

200 400 600 800 1000 1200

QE=100 %

Previousproduct

Parameter Symbol Condition Min. Typ. Max. UnitSpectral response range λ - - 340 to 1,100 - nm

Peak sensitivity wavelength λp - - 920 - nm

Photo sensitivity S λ=540 nm 380 420 460

mA / Wλ=λp 550 610 670

X-ray sensitivity IscX *1

S11212-021 / S11299-021 - - -

nAS11212-121 / S11299-121 - 6.0 -

S11212-321 / S11299-321 - 3.5 -

S11212-421 / S11299-421 - 3.0 -

Dark current ID VR=10 mV - 5 30 pARise time tr VR=0 V, RL=1 kΩ

10 to 90 %, λ=658 nm- 6.5 - µs

Terminal capacitance Ct VR=0 V, f=10 kHz 30 40 50 pF

Electrical and optical characteristics (Typ. Ta=25 deg. C. per element, S11212-021 characteristics except X-ray sensitivity)

*1: These are reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum fi lter t=6 mm, distance 830 nm). X-ray sensitivity depends on the X-ray equipment operating and setup conditions.

Element no.

110

105

100

95

90

85

80

S11212 / S11299 series

Previous product

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

S11212-021

S11299-021

S11212-121S11212-321S11212-421

S11299-121S11299-321S11299-421

LASER PRODUCTS

News 2011 Vol. 218

Quantum Cascade Lasers L12004-2190H-C, L12007-1294H-C, L12017-1278T-C

Mid-IR laser for 4.57 µm (CW), 7.73 µm (CW) and 7.82 µm (pulsed)

Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-IR range (4 µm to 10 µm). They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis. All of the QCLs introduced here are hermetically packaged with a Peltier TEC (thermoelectric cooler) and thermistor to be driven under room temperature. Featuring a DFB (distributed feedback) structure, they offer accurate emission wavenumbers, narrow line widths and tuning ranges without mode hopping.

Features Accurate emission wavenumber Narrow line width Mode-hop-free tuning range High radiant output power Room temperature operation Hermetically packaged

Applications Gas spectroscopy Environmental measurement Medical instrumentation

Author: Yasuhiro Hayashi, Hamamatsu Photonics K.K.

HHL package for CW operation

TO-8 package pulsed operation

LASER PRODUCTS

19News 2011 Vol. 2

Parameter Symbol Condition Min. Max. UnitOperating temperature*1 Top(qcl) K*2=2,190 cm-1 +10 +50 deg. C.

Line width*3 KL K=2,190 cm-1 - 0.2*4 cm-1

Tuning range*5 KT K=2,190 cm-1 ±1.0 - cm-1

Output power Φe K=2,190 cm-1 20 - mW

Threshold current Ith Top(qcl)=+20 deg. C. - 1.0 A

Side-mode suppression ratio (SMSR) SMS Top(qcl)=+20 deg. C. 25 - dB

DFB-CW QCL L12004-2190H-C

Parameter Symbol Condition Min. Max. UnitOperating temperature*1 Top(qcl) K*2=1,294 cm-1 +10 +50 deg. C.



Output power Φe K=1,294 cm-1 20 - mW



L12007-1294H-C

Parameter Symbol Condition Min. Max. UnitOperating temperature*1 Top(qcl) K*2=1,278 cm-1 -10 +50 deg. C.



Output power Φep K=1,278 cm-1 50 - mW



DFB-Pulsed QCL L12017-1278T-C

*1: This specifi es the temperature range within which the target emission wavenumber (K.) can be realised.*2: Emission wavenumber.*3: Full-width half maximum (FWHM).*4: The fi gures are limited by the resolution and signal / noise ratio of the measuring instruments used.*5: This specifi es the continuous tunable range (without mode hopping). The center wavenumber of the tuning range is the emission wavenumber (K.).


News 2011 Vol. 220

Low Temperature Operation Photomultiplier Tube R11410-10

Head on photomultiplier tube for -110 deg. C. operation

The R11410-10 is a brand new 76 mm (3”) diameter head-on PMT, utilising a 12 stage, box and linear-focused type dynode chain giving a high electron collection effi ciency and fast time response. The R11410-10 features a spectral response range of 160 nm to 650 nm and by using a synthetic silica window a high UV sensitivity is achieved with a quantum effi ciency of 26 % at 175 nm.

By using a metal package, it is possible to eliminate the background count caused by radioisotopes decaying and interacting with the PMT and scintillator, a common problem found within conventional glass packages. The R11410-10 has a ceramic stem as well as metal package to reduce radioactivity contained in the PMT. It enables further background reduction.

Most impressively, this new PMT can be operated at temperatures as low as -110 deg. C. (163 K.) making it ideal for dark matter detection experiments with a liquid xenon scintillator.

Features -110 deg. C. (163 K.) operation Low radioactivity package Large active area High UV sensitivity

Applications Dark matter experiment using Liquid Xe


R11410-10 photomultiplier tube

Parameter Description / Value UnitSpectral response 160 to 650 nm

Wavelength of Maximum Response 420 nmWindow material Synthetic silica -

PhotocathodeMaterial Bialkali -Minimum Effective Area φ64 mm

DynodeStructure Box & Linear-focused -

Number of Stages 12 -

Suitable Socket E678-20B (supplied) -

Operating Ambient Temperature -110 to +50 deg. C.

Storage Temperature -110 to +50 deg. C.

Specifi cations


21News 2011 Vol. 2

High Voltage Power SuppliesC10940 Series

Compact and lightweight power supplies

Hamamatsu introduces a new series of high voltage power supplies for use with photomultiplier tubes. The C10940 series are designed to be lightweight, compact and highly reliable for demanding applications.

Especially useful for systems using multiple detectors, the C10940 series is compatible with RS-485 digital control, allowing for daisy chaining multiple supplies and detectors.

Features High conversion effi ciency close to 70 % Compact size: 15 x 15 x 18 mm Output range: -10 to -1200 V (C10940-03)

+10 to +1200 V (C10940-53) Output current: 0.6 mA

Applications Photomultiplier tube power supply


C10940 high voltage power supply

Size-comparison C10940

Application example of digital control – multiple operation

HVPS 1COMPUTER

RS-485

High VoltageAdjustment

Light Detection

PMT1StabilisedLight Source

Input Light

Before correction

Sign

al O

utpu

t

PMT2

PMT3

HVPS 2 HVPS 3PMT2

Input Light

After correction

Sign

al O

utpu

t

Possible to minimize the variance of each PMT signal output by tuning loop using stabilised light source. In this loop, the sequence of adjusting the high voltage while detecting the PMT signal is repeated until its output reaches the specified value set by a host computer.This value is memorized inside the each HVPS as a most suitable offset voltage.

Multi-channel high voltage power supplies can be controlled by a computer.

PMT1

PMT3

Possible to minimise the variance of each PMT signal output by tuning loop using stabilised light source. In this loop, the sequence of adjusting the high voltage while detecting the PMT signal is repeated until its output reaches the specifi ed value set by a host computer. This value is memorised inside the each HVPS as a most suitable offset voltage.


News 2011 Vol. 222

UV Power Meter C10427, H10428

Controller with integrated sensor head

Controller with separate sensor head and battery

Controller and sensor head

Compact power meter for absolute UV measurements

Hamamatsu introduces a new compact UV power meter for absolute UV measurements. With a wide UV spectral response, the new unit can measure the optical power in the spectral response range independent of the spectral emission distribution of the light source.

The new power meter is ideal for measurements of various UV light sources including black light, UV LED, mercury-xenon and xenon lamps as well as deuterium lamps.

Features Flat spectral response over a wide UV range Compact design Wide, oblique light incidence characteristics close to cos θ Measurement with separate sensor head Traceable to international metrology standards Calibration certifi cate attached

Applications Power measurements for: black light, LED, mercury-xenon and

xenon lamps


Rela

tive

Valu

e (%

)

Wavelength (nm)

100

80

60

40

20

0

351 368

Relative Spectral Response Characteristics of Detector (Typ.)

200 250 300 350 400 450 500

BLACK LIGHT

BLACK LIGHT

H10428

Note: Slight reponse may occur at wavelengths over 420 nm.


23News 2011 Vol. 2

Xenon Flash Light Source LF2L11729, L11730

Compact Bench-top Xenon Flash Light Module

Hamamatsu are pleased to introduce the LF2 series of Xenon fl ash lamp modules. The LF2 is similar to the LF1 in some aspects as it features a 40 W maximum output, a long life of 108 fl ashes and optional PC control. However the LF2 also improves on the LF1 by offering a much more compact size with a volumetric reduction of 33 %.

The LF2 also has the option of a 15 W bulb, allowing for a high repetition rate. There is the option to have the lightguide exit from either the front or rear panel.

Lineup L11729: Rear panel lightguide type L11730: Front panel lightguide type

Features Compact Easy lamp replacement High stability Long service life Instantaneously high peak output

Applications Strobe light Image processing FA (Factory Automation) Semiconductor inspection Fluorescence microscopy


LF2 fl ash light source

LF2 – front and back view

Parameter -04-04 -04-005 (15W type) UnitMaximum lamp input power 40 15 W

Maximum lamp input energy (per fl ash) 1.28 0.25 J

Maximum repetition rate 30 to 70 100 Hz

Flash duration (FWHM) 2 to 4 2 µs

Light output stability (Typ.) ±5 ±5 %

Spectral distribution 385 to 1600 nmDelay time 20 µs Max.Lamp supply voltage 300 to 800 300 to 1000 VLamp service life 1×108 fl ashInternal capacitor 4 0.5 µFLight emission control Light emission by external trigger -Lamp for maintenance L10213 L11143 -Trigger socket for maintenance E10303-02 E11144 -Input voltage (DC) 24 VPower consumption (Max.) 150 WWeight 4.0 kgDimensions (W×H×D) 117×167×282 mmExternal control terminal D-SUB 25 pins -Applicable standards EN61326 : CLASS A -Operating ambient temperature +5~+35 deg. C.

Operating ambient humidity 10~80 %Storage temperature -10~+70 deg. C.Storage humidity Below 80 %

Specifi cations


News 2011 Vol. 224

20 W Xenon Flash LampsL119XX Series

New high-power Xenon fl ash lamps

Hamamatsu are pleased to introduce a new power to their line up of Xenon fl ash lamps. The 20 W fl ash lamps fi ts between the mid power 15 W lamps and the high power 60 W lamps already available.

The 20 W lamps feature four different window materials, allowing for selection of UV output for varying applications. The range also features two arc lengths, 1.5 mm and 3 mm and the option to have built in refl ectors for maximising output.

The lamps have a guaranteed life of 1 x 108 fl ashes and are very stable, 1 % CV, throughout this lifetime, allowing for low maintenance of equipment.

Features 20 W output No cooling required Four different windows available Guaranteed 1 x 108 fl ash lifetime

Applications Point of care testing Food inspection Factory automation Biological research


L119XX series Xenon fl ash lamps

Application Examples

Medical analysis, environmental analysis FA (Factory Automation)Biological research

XENON FLASH LAMP

SAMPLE BLOOD

FLUORESCENTFILTER

CONDENSER LENS

CONDENSER LENSCONDENSER LENS

CONDENSER LENS

EXCITATION FILTER

HIGH SENSITIVITY PHOTODETECTOR(PHOTOMULTIPLIER TUBE)

MONITORCCD CAMERA

XENONFLASH LAMP

• Shape inspection of various parts• Glass bottle flaw or stain detection• Fluid impurity inspection• Colour analyser for printing• Positioning for printing

• In-vitro testing• Air pollution analysis• Water pollution analysis, drainage pollution analysis• Fluorescence spectrophotometers• UV to visible spectrophotometers

Example: Blood analyser Example: Microplate reader Example: Strobe light for high-speed image processing

HIGH SENSITIVITY PHOTODETECTOR(PHOTOMULTIPLIER TUBE)

XENON FLASH LAMP

FILTER MIRROR

FILTER

SAMPLE(CELL, DRAG DISCOVERIES, etc.)


25News 2011 Vol. 2

ø 14.3±0.15 22.8±0.5

Pin connections1 Anode2 Trigger probe 23 Trigger probe 14 Cathode5 Sparker

Figure 2Pin connections1 Anode2 No connection3 Trigger probe 14 Cathode5 Sparker

Figure 1

27.6±0.5

(2.0)

12.8±0.2

12

345

ø 28.9±0.5

ø 34.8±0.5

(4.3)ø 14.3±0.15 22.8±0.5

27.6±0.5

(2.0)

12.8±0.2

12

3

3.0

1.5

45

ø 28.9±0.5

ø 34.8±0.5

(4.3)

Dimensional outline (Unit: mm)

ø 14.3±0.15 22.8±0.5

Pin connections1 Anode2 Trigger probe 23 Trigger probe 14 Cathode5 Sparker

Figure 2Pin connections1 Anode2 No connection3 Trigger probe 14 Cathode5 Sparker

Figure 1

27.6±0.5

(2.0)

12.8±0.2

12

345

ø 28.9±0.5

ø 34.8±0.5

(4.3)ø 14.3±0.15 22.8±0.5

27.6±0.5

(2.0)

12.8±0.2

12

3

3.0

1.5

45

ø 28.9±0.5

ø 34.8±0.5

(4.3)

Part Number Window Material Built-in Refl ector Arc Size (mm) Dimensional outline Trigger socketL11936 Borosilicate

No

1.5 mm ± 0.2 mm See fi gure 1 E10977

L11937 UV

L11938 Sapphire

L11939 Synthetic Silica

L11946 Borosilicate

YesL11947 UV

L11948 Sapphire


L11956 Borosilicate

No

3.0 mm ± 0.2 mm See fi gure 2 E10978

L11957 UV

L11958 Sapphire


L11966 Borosilicate

YesL11967 UV

L11968 Sapphire


Explanation to ETD products

Parameter Description / Value UnitOperating Voltage 700 to 1000 V

Trigger Voltage 5 to 7 kV

Maximum Energy per Flash 0.5 (1000 A peak max.) J

Average Power 20 max. W

Flash Rate 300 max.*1 Hz

Light Output Stability 1.0 CV typ.*2 %

Guaranteed Life 1.0 × 108 Flashes*3 -

Electrical Specifi cations (Typ. Ta=25 deg. C.)

*1: 20 W or less.*2: Operating condition: 1000 V, 1.0 µF, 40 Hz (Measurement wavelength 190 to 1100 nm).

Light output stability calculation: Light output stability (% CV) = Standard deviation / Average light output x 100.*3: Operating condition: 1000 V, 1.0 µF, 40 Hz [0.5 J-20 W]). Life end is defi ned as the point when the light output

falls to 50 % of its initial value or when output stability exceeds 2.0 % CV.


News 2011 Vol. 226

PhotoionizerL11757

Low energy advanced static remover

The L11757 from Hamamatsu, a new addition to our comprehensive range of static removal systems, the Photoionizer series. The L11757 is a low energy version of the existing range and features a more compact sized head, allowing for freedom of placement during installation.

As part of the Photoioinizer series, the L11757 offers maintenance free operation, no dust generation, no electromagnetic noise and does not require or generate air fl ow.

Features Compact head unit (W x H x D): 50 mm x 56 mm x 45 mm Wide soft X-ray beam angle: 153 degrees High reliability

Applications Static removal


L11757 Photoionizer

Parameter Discription / ValueIonisation Method Soft X-ray exposure

Ionisation Source

Type Soft X-ray tubeTube Voltage (DC) -4.9 kVTube Current 200 µmBeam Angle 153 deg.

Input Voltage (AC) 100 V ~ 240 V (50 Hz / 60 Hz)

Power Consumption 7 W Max.

Source of ion production

Life Mean time to failure (MTTF) 14,800 hours

WeightHead 250 g

Controller 500 g

Operating Ambient Temperature 0 deg. C. to +40 deg. C.

Operating Ambient Humidity Below 60 %

Storage Temperature -10 deg. C. to +60 deg. C.

Storage Humidity Below 80 %

Specifi cations

Charged objects

Ion

Film

SYSTEMS PRODUCTS

27News 2011 Vol. 2

Universal Streak CameraC10910

Powerful instrument for ultrafast optical measurements

Hamamatsu’s Universal Streak Camera is a very versatile instrument for ultrafast optical measurements in the UV to NIR range. It simultaneously delivers intensity over time and position (or wavelength) information, with single-photon sensitivity.

With the new model C10910 we increase the time resolution compared to the previous model by a factor of two, reaching now less than 1 picosecond (FWHM). This improvement is achieved while maintaining – and even extending – the fl exibility of the instrument. This is possible thanks to a host aof optional modules that can be chosen according to the specifi c requirements of the application.

There are several “synchroscan” as well as “single-sweep” modules, which together cover a vast range of time domains, from the sub-ps up into the ms.

In addition, there is a full range of optional sweep modules used to cut-off unwanted light signal, or establishing a second time axis for special applications.

These features make the C10910 a unique, very powerful tool for a wide range of applications such as:

Ultrafast fl uorescence lifetime spectroscopy Response times of quantum devices Photon correlation measurements Monitoring of high-energy facilities like synchrotron, FEL, LINAC Plasma and laser physics Many other photonic applications requiring very high temporal resolution

Author: Uwe Denzer, Hamamatsu Photonics Germany

C 10910 Universal Streak Camera

Spectral response of the streak tube (typical example)

Pulse train from a Ti-Sa laser

Radi

ant s

ensit

ivity

(µA

/ W)

Wavelength (nm)

105

104

103

102

101

100

10-1

10-2

200 400 600 800 1000 1200 1400 1600

S20

S-1

SYSTEMS PRODUCTS

News 2011 Vol. 228

X-ray Excited Lifetime FluorospectrometerPicoXspeC

Picosecond X-ray induced fl uorescence spectroscopy system for scintillators and other fl uorescent materials

For the development and characterisation of new materials for scintillation and other applications, an important technique is the excitation of the materials by short pulses and the study of the resulting temporal and spectral resolved fl uorescence emission induced.

If only optical excitation is needed picosecond lasers can be used. If, however, higher excitation energies are required, things become much more complicated. One can use short X-ray pulses produced at large facilities like synchrotrons, but this is very expensive and inconvenient, since each sample must be carried to the light source. Alternatively, one can use emission from radioisotopes, but this raises many concerns, not least the strict safety measures needed for handling these hazardous radiation sources.

A much simpler approach became possible using a special X-ray tube from Hamamatsu Photonics, which can be used as a table-top source of short-pulsed X-rays. This allows for a lab-based solution without any hazardous materials.

While some researchers have already adopted this approach in conjunction with a time-correlated single photon counting (TCSPC) detection scheme (measuring only one wavelength at one time), our new PicoXspeC system employs Hamamatsu’s streak technology, allowing spectral multichannel recording (measuring all wavelengths at the same time). The recording of full time-resolved spectra (photons over time and wavelength) gives the maximum of information from the samples under study.

A new-generation X-ray tube with 40 kV is now being used.

The PicoXspeC system combines several key technologies of Hamamatsu:

A picosecond light pulser (440 nm, pulse width < 100 ps) that can be used for material excitation in the optical range

A special tube that delivers the short pulses (< 100 ps) used for material excitation in the X-ray range (40 kV)

A compact multichannel spectrograph with two software-selectable gratings

A “StreakScope” for the recording of the fl uorescence emission, which can record all fl uorescence wavelengths simultaneously and with photon-counting sensitivity

The whole system is very compact and fi ts easily on a lab bench. All operation is controlled by software.

The system does not emit radiation above the legally allowed limits, so it is easy for the customer to obtain the required license to operate it.

PicoXspeC

SYSTEMS PRODUCTS

29News 2011 Vol. 2

Main features Records full time-resolved fl uorescence spectra Spectral multichannel recording (no slow spectral scans needed) Sample excitation via short optical or X-ray pulses (easily switchable) Photon-counting sensitivity Can determine fl uorescence lifetimes between 20 ps and 1 ms Wide spectral range (200 to 850 nm) Pulse repetition rate up to 10 MHz Compact size Safe and easy operation

Modifi ed systems with wider spectral range, other optical wavelengths, or even higher time resolutions may be available on request. We will be pleased to discuss your specifi c requirements with you.

Author: Uwe Denzer, Hamamatsu Photonics Germany

Time-resolved spectrum (X-axis: wavelength, Y-axis: time); each spot is a single fl uorescence photon.

Decay curve (intensity vs. time), extracted from the same image; the red curve shows a bi-exponential data fi t.

Measurement of CsI powder excited by pulsed X-ray

SYSTEMS PRODUCTS

News 2011 Vol. 230

InGaAs CameraC8250-31

New InGaAs camera for PHEMOS

Our industry leading PHEMOS systems for semiconductor failure analysis can now be equipped with a new high performance camera for emission microscopy applications.

The camera, type number C8250-31, is now our most sensitive emission detection camera. Its newly developed 1 megapixel InGaAs detector array is based on latest manufacturing technologies, which signifi cantly reduces the readout noise. Liquid nitrogen cooling is applied to reduce the camera dark noise to a minimum. The low readout noise, along with the high quantum effi ciency and the low dark noise of the camera leads to 10 times improved detection sensitivity compared to our previous champion InGaAs camera.

Due to the advancements in reduction of device supply voltages along with advanced design rules, the intensity of light emission on CMOS devices is reduced, causing a need for cameras with higher detection effi ciency. The C8250-31 follows this demand and is now the recommended emission detector for advanced device analysis.

For users with less stringent requirements we continue to offer our peltier cooled and liquid nitrogen cooled versions of the InGaAs camera with 640 x 512 pixels.

Features and Benefi ts High sensitivity for detection of extremely weak emission signals 1024 x 1024 pixels for more accurate failure localisation

Applications Emission detection on CMOS devices for failure localisation

Author: Hubert Ortner, Hamamatsu Photonics Germany

C8250-31 InGaAs Camera

Sensitivity improvement C8250-31

Dete

ctio

n se

nsiti

vity

Exposure time (sec)

1

0.1

0.01

0.0010 10 20 30 40

C8250-21

C8250-31

SYSTEMS PRODUCTS

31News 2011 Vol. 2

PV Imaging SystemEPLi

Advanced solar cell analysis system

Detection of luminescence signals from wafers, solar cells and solar panels has become a major technique for characterisation and quality inspection. The PV imaging system uses various high sensitivity CCD cameras (EM / InGaAs) to acquire the luminescent state and intensity distribution of photo- and electroluminescence emitted from solar cells (Si material or thin fi lm) for analysing and characterising cells and panels, optimising manufacturing processes and quality inspection. To achieve a reliable performance and high effi ciency of solar cells, the analysis of intrinsic defects (grain boundaries and dislocations clusters, etc.) and extrinsic defects (substrate breakage, cracks, shunt holes, etc.) is a determining factor. They are applied for silicon based solar detectors as well as for thin fi lm and organic devices.

The two methods are: Electroluminescence (EL) Photoluminescence (PL)

ElectroluminescenceIn forward biased voltage the amount of the light can be quantitatively analyzed to characterize carrier lifetime and sheet resistance. The spatial distribution indicates defects (such as micro-cracks), material inhomogeinities, delaminations and many other phenomena which are all relevant for the quality of photovoltaic detectors. The recombination radiation is typically centered in the near infrared wavelength region. Applying a reversed bias voltage to a photovoltaic device, weak light signals can be detected even below its break down voltage level caused by defects (e.g. shunts) of a solar device. Intrinsic defects can be shown separately for quick discrimination from extrinsic ones.

PhotoluminescenceWhen light is shining on a semiconductor (excitation), a photoluminescence signal is generated (emission). By spectrally separating the excitation and a emission signal and imaging the luminescence signal by a sensitive camera, characterisation and defect analysis of raw bulk material, wafers in process, fi nished cells is possible.

Cell effi ciency, material properties, process failures or cracks can be analyzed.

Author: Söhnke Kleiner, Hamamatsu Photonics Germany

EPLi PV Imaging System

SYSTEMS PRODUCTS

News 2011 Vol. 232

Application SoftwareHiPic 9.1

Now available as 64 bit application

The well known application software HiPic (High Performance Image Control) has been completely rewritten with a modern development system (Visual Studio 2008) and is now based on .NET framework technology. It is available as a 32 bit and 64 bit application which can take full advantage of a modern 64 bit operating system.

HiPic is a software designed for image acquisition and image analysis supporting a wide variety of Hamamatsu cameras such as CCD, EM-CCD, back thinned CCD, line sensor, TDI sensor and X-ray cameras. It supports the most recent cameras from Hamamatsu such as ORCA-R2, ORCA-D2 and ORCA-Flash2.8 which is equipped a new scientifi c image sensor FL-280, whilst keeping compatibility to older systems.

HiPic supports all the devices supported by the well established Hamamatsu DCAM-API (Digital Camera Application Programming Interface) as well as additional devices like X-ray CMOS Flat panel and Microfocus X-ray sources.

Its focus is on high precision image acquisition including precise time stamp, high speed data recording or integrating image data up to 32 bit. It also features sophisticated correction algorithms like background, shading and defect pixel correction to compensate for artifacts of the camera and the measurement system as a whole.

An outstanding feature is the so called RemoteEx which allows the control of HiPic and to get images and other data by TCP / IP with a simple and

comprehensive control language. This allows the use of HiPic and all supported devices even across platforms such as UNIX or Linux. An easy to understand sample source code is available on request.

Features and applications Image processing software for all Hamamatsu grey scale

cameras like the ORCA or ImagEM series, analog video cameras, the X-ray Flat panels or X-ray Line sensors, X-ray line sensors, and special devices such as TDI and X-ray TDI cameras

Suitable for applications in physics, industry or biology, for high performance digital image acquisition, processing and analysis

All camera features controllable Sequence acquisition at high frame rate Supports many different image interfaces such as Camera

Link, FireWire, USB, GigE, RS422, LVDS or analog video Cameras fully supported by DCAM API (Hamamatsu

standard) Remote Control across platforms Special emphasis on X-ray and TDI data acquisition

Author: Wolfgang Turba, Hamamatsu Photonics Germany

Client Program HiPic

RemoteEx schematics

Control by TCP-IP

Data and events

Company

Surname, fi rst name

Street, street number or post box number

Postal code, place

Hamamatsu Photonics is allowed to send information about their products to this E-mail address, until further notice from the addressee. Hamamatsu Photonics will not supply this information to third parties.

My address has changed. Please send me the Hamamatsu Photonics News regularly at the address above.

The present addressee of the Hamamatsu Photonics News is no longer interested in this magazine. Please send the Hamamatsu News in future to the address above.

I want to receive the Hamamatsu Photonics News regularly. Please add me to your distribution list.

Please do not send me Hamamatsu Photonics News in the future.

I am interested in the following products, which are described in the Hamamatsu Photonics News 2011 Vol. 2:

Solid State Products: 06 08 10 11 12 13 14 15 16

Laser Products: 18

Electron Tube Products: 20 21 22 23 24 26

Systems Products: 27 28 30 31 32

Please contact me.

I am searching for a solution for the following application:

Position within the company

Telephone

Fax

E-mail

33News 2011 Vol. 2

Fax Reply

News 2011 Vol. 234

Exhibitions 2011 / 12

October 2011

53rd Symposium of the Society f. Histochemistry12. - 15. October 2011 - Munich, Germanywww.helmholtz-muenchen.de/histochemistry2011

Labtechnology12. - 13. October 2011 - Den Bosch, Netherlands

Les RDV Carnot12. - 13. October 2011 - Lyon, Francewww.rdv-carnot.com/UK/index.html

5th international Workshop on very large Volume Neutrino Telescopes12. - 14. October 2011 - Erlangen, Germanywww.vlvnt11.org

Oxford Biomedical Imaging Festival13. October 2011 - Oxford, Englandwww.imaging.ox.ac.uk

RadTech Europe 201118. - 20. October 2011 - Basel, Switzerlandwww.european-coatings.com/radtech/index.cfm

Photonex18. - 19. October 2011 - Coventry, Englandwww.photonex.org

IEEE Nuclear Science Symposium and Medical Imaging Conference23. - 29. October 2011 - Valencia, Spainwww.nss-mic.org/2011

Ainpd 26. - 28. October 2011 - Firenze, Italywww.aipnd.it

November 2011

22nd European Society of Paediatric and Neonatal Intensive Care (ESPNIC)2. - 5. November 2011 - Hannover, Germanywww.kenes.com/espnic

Vision8. - 10. November 2011 - Stuttgart, Germanywww.vision-messe.de

Secpho exhibition16. - 17. November 2011 - Terrassa, Spainwww.secpho.org

HTE expo / Photonica 16. - 18. November 2011 - Milano, Italywww.hitechexpo.eu

Compamed16. - 18. November 2011 - Düsseldorf, Germanywww.compamed.de

Carrefour Pathologie 21. - 25. November 2011 - Paris, Francewww.lepublicsystemepco.com/events.php

Colloque CMOI / FLUVISU21. - 25. November 2011 - Lille, Francewww.club-cmoi.fr/

December 2011

Ticme12. - 14. December 2011 - Trento, Italywww.ticme2011.ing.unitn.it

January 2012

Bamberger Morphologietage27. - 29. January 2012 - Bamberg, Germanywww.morphologietage.de

February 2012

DGTHG Tagung12. - 15. February 2012 - Freiburg, Germanywww.dgthg-jahrestagung.de

March 2012

ECR Tagung 1. - 5. March 2012 - Vienna, Austriawww.myesr.org

Automaticon20. - 23. March 2011 - Warsaw, Polandwww.tradefairdates.com/Automaticon-M3421/Warsaw.html

9th Annual Histopathology Event30. March 2012 - London, Englandwww.euroscicon.com

April 2012

Analytica17. - 20. April 2012 - Munich, Germanywww.analytica.de

Photonics17. - 20. April 2012 - Moscow, Russiawww.photonics-expo.ru/en/

S.E.E. Scandinavian Electronics Event17. - 19. April 2012 - Stockholm, Swedenwww.see-event.se/

May 2012

LABOTEC Suisse9. - 10. May 2012 - Basel, Switzerlandwww.easyfairs.ch

XII Pisa meeting on advanced detectors20. - 26. May 2012 - Isola d'Elba, Italywww.pi.infn.it

Sensor + Test22. - 24. May 2012 - Nuremberg, Germanywww.sensor-test.de

Optatec22. - 25. May 2012 - Frankfurt, Germanywww.optatec-messe.de

4. Woche der Pathologie31. May - 3. June 2012 - Berlin, Germany

June 2012

Cyto1. - 6. June 2012 - Leipzig, Germanywww.cytoconference.org/

September 2012

SINDEX Massgebend ist Technologie4. - 6. September 2012 - Bern, Switzerlandwww.sindex.ch

24th European Congress of Pathology8. - 12. September 2012 - Prag, Czech Republic

European Microscopy Congress17. - 21. September 2012 - Manchester, Englandwww.emc2012.org.uk

27th European Photovoltaic Solar Energy Conference and Exhibition24. - 28. September 2012 - Frankfurt, Germanywww.photovoltaic-conference.com/

Het Instrument25. - 28. September 2012 - Amsterdam, Netherlandswww.hetinstrument.nl

October 2012

4th Congress of the European Academy of Paediatric Societies - EAPS6. - 9. October 2012 - Istanbul, Turkey

35News 2011 Vol. 2

Hamamatsu Photonics Europe

Germany: Hamamatsu Photonics Deutschland GmbH Arzbergerstr. 10, D-82211 Herrsching Phone: +49 (0) 8152 375-0 Fax: +49 (0) 8152 2658 E-mail: [email protected] North-West: (for system products) Phone: +49 (0) 2831 94506 Fax: +49 (0) 2831 94507 E-mail: [email protected] www.hamamatsu.de

Denmark: Lautruphøj 1-3DK-2750 BallerupPhone: +45 70 20 93 69Fax: +45 44 20 99 10E-mail: [email protected] Netherlands: Televisieweg 2, NL-1322 AC Almere Phone: +31 (0) 36 5405384 Fax: +31 (0) 36 5244948 E-mail: [email protected] Poland: RN 240 ul. sw. A. Boboli 8, PL-02525 Warsaw Phone: +48 (0) 22 6460016 Fax: +48 (0) 22 6460018 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L. 19, rue du Saule TrapuParc du Moulin de Massy F-91300 Massy Cedex Phone: +33 (0) 1 69 53 71 00 Fax: +33 (0) 1 69 53 71 10 E-mail: [email protected] www.hamamatsu.fr

Grenoble: Buro Club Meylan 29 Boulevard des Alpes, 38246 Meylan Cedex Phone: +33 (0) 4 76 6144 50 Fax: +33 (0) 4 76 6144 44 E-mail: [email protected] Switzerland: Dornacherplatz 7, CH-4500 Solothurn Phone: +41 (0) 32 625 60 60 Fax: +41 (0) 32 625 60 61 E-mail: [email protected] www.hamamatsu.ch

Spain / Portugal: C. Argenters, 4 edif 2Parque Tecnológico del Vallés E-08290 Cerdanyola (Spain) Phone: +34 93 582 44 30 Fax: +34 93 582 44 31 E-mail: [email protected] www.hamamatsu.es

Belgium: Parc Scientifi que -7, Rue du Bosquet B-1348 Louvain-la Neuve Phone: +32 (0) 10 45 63 34 Fax: +32 (0) 10 45 63 67 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l. a socio unico Strada della Moia 1 int. 6, I-20020 Arese (Milano) Phone: +39-02 9358 1733 r.a.Fax: +39-02 9358 1741 E-mail: [email protected] www.hamamatsu.it

South offi ce: Viale Cesare Pavese, 435, I-00144 Roma Phone: +39-06 5051 3454 Fax: +39-06 5051 3460 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Ltd. 2 Howard Court, 10 Tewin Road, Welwyn Garden City Hertfordshire AL7 1BW . England Phone: +44 (0) 1707 294888 Fax: +44 (0) 1707 325777 E-mail: [email protected] www.hamamatsu.co.uk

South Africa: PO Box 1112, Buccleuch 2066 Johannesburg Republic of South Africa Phone / Fax: +27 (0) 11 802 5505 Cellphone: +27 (0) 83 298 9266 E-mail: [email protected] Northern Europe: Hamamatsu Photonics Norden AB Smidesvägen 12, SE-17141 Solna (Sweden) Phone: +46 (0) 8 50 90 31 00 Fax: +46 (0) 8 50 90 31 01 E-mail: [email protected] www.hamamatsu.se

Russia: Vyatskaya St. 27, bld. 13 RU-127015, Moscow Phone: +7 (495) 258 85 18 Fax: +7 (495) 258 85 19 E-mail: [email protected]

Impressum

Hamamatsu Photonics News

Publisher and copyright:Hamamatsu PhotonicsDeutschland GmbHArzbergerstr. 10, D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0Fax: (49)8152-2658

Sitz der Gesellschaft: HerrschingAmtsgericht München HRB 79474Geschäftsführer: Dr. Peter EgglUSt / VAT-Id.: DE128228814http://[email protected]

Editor and responsible for content:Dr. Peter Eggl

Publishing frequency:Bi-annual, Date of this issue October 2011

Graphic and realisation:SINNIQ Technologiewerbung Ltd.www.sinniq.com

Printing:Mühlbauer Druck GmbH

Copyright:Reproduction in part or whole only allowed with our written permission. All rights reserved.

www.hamamatsu.euFreephone: Europe 00 800 800 800 88, USA 1-800 524 0504

E-mail: [email protected]

Date post:	18-Jun-2020
Category:	Documents
Upload:	others
View:	5 times
Download:	1 times

111017 ham news-02-2011 RZ · 4 News 2011 Vol. 2 Company News Hamamatsu Photonics has completed the...

Documents