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1 Advanced Industrial Electronics Resonant Power Converters References [1] Kazimierczuk M., Czarkowski D., Resonant power converters, John Wiley and Sons, Inc. 1995 [2] Kazimierczuk M., Czarkowski D., Solutions manual for - Resonant power converters, John Wiley and Sons, Inc. 1995 [3] Brown M., Power supply cookbook, Newnes, 2001 [4] Luo F. L., Ye H. Synchronous and resonant DC/DC conversion technology, energy factor, and mathematical modeling, Taylor and Francis Group, 2006 [5] Hagerman J., Calculating optimum snubbers, Hagerman Technology, 1995 [6] International Rectifier, AN-978 HV floating MOS-Gate driver ICs, International Rectifier Application Note, (www.irf.com ) [7] Hang-Seok Choi, AN-4151 Half bridge LLC resonant converter design using FSFR-series Fairchild Power Switch, Fairchild Semiconductor Corporation Application Note, 2007 [8] STMicroelectronics, AN2450 LLC resonant halfbridge converter design guidline,STMicroelectronics Application Note, 2007, (www.st.com ) References [9] Bosso C., AND8311/D Understanding the LLC structure in resonant applications, ON Semiconductor, 2008, (www.onsemi.com ) [10] Cree Inc., C2D05120-Silicon Carbide Schottky Diode, Cree Data Sheet, 2006, (www.cree.com ) [11] IXYS Corporation, IXDN430 30 amp low-side ultrafast MOSFET/IGBT driver, IXYS Corporation Data Sheet, 2004, (www.ixys.com ) [12] IXYS Corporation, EVDD 430S/ EVDD 430CY 30A Ultra Fast MOSFET/IGBT driver evaluation board, IXYS Corporation, 2003, (www.ixys.com ) [13] IXYS Corporation, IXFL32N120P Polar Power MOSFET HiperFET, IXYS Corporation Data Sheet, 2008, (www.ixys.com ) [14] IXYS Corporation, IXFN60N80P PolarHV Power HiperFET MOSFET, IXYS Corporation Data Sheet, 2006, (www.ixyys.com ) [15] STMicroelectronics, L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, (www.st.com ) [16] Infineon Technologies AG, SKW25N120 fast IGBT in NPT technology, Infineon Data Sheet, 2006
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Page 1: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

1

Advanced Industrial Electronics

Resonant Power Converters

References[1] Kazimierczuk M., Czarkowski D., Resonant power converters, John Wiley and Sons, Inc. 1995

[2] Kazimierczuk M., Czarkowski D., Solutions manual for - Resonant power converters, John Wiley and Sons, Inc. 1995

[3] Brown M., Power supply cookbook, Newnes, 2001

[4] Luo F. L., Ye H. Synchronous and resonant DC/DC conversion technology, energy factor, and mathematical modeling, Taylor and Francis Group, 2006

[5] Hagerman J., Calculating optimum snubbers, Hagerman Technology, 1995

[6] International Rectifier, AN-978 HV floating MOS-Gate driver ICs, International Rectifier Application Note, (www.irf.com)

[7] Hang-Seok Choi, AN-4151 Half bridge LLC resonant converter design using FSFR-series Fairchild Power Switch, Fairchild Semiconductor Corporation Application Note, 2007

[8] STMicroelectronics, AN2450 LLC resonant halfbridge converter design guidline,STMicroelectronics Application Note, 2007, (www.st.com)

References[9] Bosso C., AND8311/D Understanding the LLC structure in resonant applications, ON Semiconductor, 2008, (www.onsemi.com)

[10] Cree Inc., C2D05120-Silicon Carbide Schottky Diode, Cree Data Sheet, 2006, (www.cree.com)

[11] IXYS Corporation, IXDN430 30 amp low-side ultrafast MOSFET/IGBT driver, IXYS Corporation Data Sheet, 2004, (www.ixys.com)

[12] IXYS Corporation, EVDD 430S/ EVDD 430CY 30A Ultra Fast MOSFET/IGBT driver evaluation board, IXYS Corporation, 2003, (www.ixys.com)

[13] IXYS Corporation, IXFL32N120P Polar Power MOSFET HiperFET, IXYS Corporation Data Sheet, 2008, (www.ixys.com)

[14] IXYS Corporation, IXFN60N80P PolarHV Power HiperFET MOSFET, IXYS Corporation Data Sheet, 2006, (www.ixyys.com)

[15] STMicroelectronics, L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, (www.st.com)

[16] Infineon Technologies AG, SKW25N120 fast IGBT in NPT technology, Infineon Data Sheet, 2006

Page 2: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

2

Introduction

PWM and resonant power converting ideas

Introduction

Block diagram of a typical PWM/resonant switching power supply

Low frequencyrectifier, filter

with PFCcorrection

MAINS AC230V/400V

50 Hz PWM/Resonantinverter

DC320V/560V

Vin High frequencyrectifierand filter

ACLoad

DCVout

ConverterController

PFCController

DC-DC converter

Introduction

The function of DC-DC converter are as follows:

- to convert a DC input voltage (Vin) into a DC output voltage (Vout)

- to control the DC output voltage (Vout) against load and mains variations

- to reduce the AC ripple on the DC output voltage (Vout) below the required level

- to provide isolation between the input source and the load

- to protect the supplied system from electromagnetic interference (EMI)

- to satisfy various international and national safety standards

Page 3: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

3

Introduction

Voltage-switching half-bridge inverters with various resonant circuits

Introduction

Main features of the resonant circuits:

- circuits a), f) and g) supply a sinusoidal output current and are compatible with current-driven high frequency rectifiers

- inverters (b)-(e) produce a sinusoidal output voltage and are compatible with voltage-driven rectifier

- for the circuits (b)-(g) resonant frequency depends on the load

LLC inverter basics

Page 4: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

4

LLC inverter basics

- the ratio of the inductance:2

1

L

LA =

- the equivalent inductance: ( )

+=+=+=A

LALLLL1

11 2221

- the undamped natural frequency: ( )CLLLC 21

0

11

+==ω

- the characteristic impedance:C

L

CLZ ===

000

1

ωω

LLC inverter basics

- the loaded quality factor at f0:00

0 Z

R

L

RCRQ LL

LL ===ω

ω

- the equivalent inductance of the damped circuits:

seq LLL += 1

2

22

22

1L

s

R

L

LL

ω+=where

- the resonant frequency: ( )CLLCL seq

r +==

1

11ω

( )s

sr

srr R

LL

CRQ

+== 11 ωω

- the quality factor at the resonant frequency:

where ( )22

22 /1 LR

RR

rL

Ls ω+

=

LLC inverter basics

f0

Gain

f

Mmax

capacitive regionZCS

inductive regionZVS

peak gain

Page 5: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

5

LLC inverter basics

Capacitive region – current leads the voltage, bridge MOSFETs operate in zero current switching (ZCS). It means that power MOSFETs are turned-off (Vds decreases from Vin to 0) at zero current. Switching-off losses can be neglected.

Inductive region – current lags the voltage. Power switches are turned-on (Is is increasing from 0 to Ismax) at zero volts (ZVS). Switching-on losses can be neglected.

For frequency fsw = f0 the MOSFETs turn on and turn off at zero currents, resulting in zero switching losses and high efficiency.

LLC inverter basics

*Taken from „Resonant power converters”,

KazimierczukM.,Czarkowski D.[1]

LLC inverter basics

Operating below resonant frequency (ZCS):

a) conductive sequence is Q1, D1, Q2, D2

b) there are a few detrimental effects of switching-on MOSFET:

- reverse recovery of the antiparallel diode of the opposite switch

- second breakdown of the MOSFET parasitic bipolar transistor

- discharging of transistor output capacitance (additional losses)

- Miller’s effect

Page 6: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

6

LLC inverter basicsOperating below resonant frequency:

d) IGBT transistors or thyristors with antiparallel diode should be used instead of MOSFETs

*Taken from „ SKW25N120 fast IGBT in NPT technology, Infineon Data Sheet, 2006 [16]

LLC inverter basics

Operating at frequency fsw=f0:

- transistors turn on and turn off at zero currents

- efficiency is high because of lack the conducting losses

- antiparallel diodes never conduct

- output power or output voltage of the converters can not be controlled

LLC inverter basics

Operating at frequency fsw > f0:

- the conduction sequence of the semiconductor devices is D1-Q1-D2-Q2

- MOSFETs

operates at ZVS

t

Vgs1

Vgs2Td

Vin

Vds2

ZVS

i

Page 7: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

7

LLC inverter basics

The LLC resonant converter with a transformer center-tapped rectifier

LLC inverter basics

S2 in ON, D4 is conducting

LLC inverter basics

S2 is ON, D1 – D4 are blocked

Page 8: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

8

LLC inverter basics

S1, S2 are OFF, Coss1 id discharging, Coss2 is charging

LLC inverter basics

VCoss2=Vin+Vf, D1 conducts; S1, S2 are OFF; D3, D4 are blocked

LLC inverter basics

S1 is ON, D3 is conducting

Page 9: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

9

LLC inverter basics

S1 is ON; D3, D4 are blocked

LLC inverter basics

S1, S2 are OFF, Coss1 is charging, Coss2 id discharging

LLC inverter basics

S1, S2 are OFF, VCoss2 = -Uf, D2 is conducting

Page 10: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

10

LLC inverter basics

*Taken from „AND8311/D Understanding the LLC structure in resonant applications”, Bosso C.ON Semiconductor, 2008 [9]

LLC full-bridge converter

High frequency rectifiers

Page 11: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

11

High frequency rectifiers

The features of current driven diode rectifiers:

- have to be driven by current source

- the DC output current is directly proportional to the amplitude of the input current

- the diode threshold voltage Uf, the diode forward resistance Rf and filter capacitor ESR reduce efficiency of the rectifiers

- the center-tapped rectifier has the highest efficiency, while the half-wave has the lowest

High frequency rectifiersThe features of current driven diode rectifiers:

- half-wave and bridge rectifier are suitable high voltage applications because the diode peak reverse voltage is Vdm

= -V0

- for the half-wave rectifier both the source and the load can be connected to the same ground

- the RMS current of capacitor is very high and therefore the capacitor must be rated accordingly

- the ESL of the filter capacitor may destroy the filtering effect at very high frequency

High frequency rectifiersFeatures of the rectifier:

- it has the highest efficiency

- its efficiency is low at light loads

- its not suitable for high frequency because of increasing the gate-driver power

Page 12: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

12

High frequency rectifiers

High frequency rectifiers

The features of voltage driven diode rectifiers:

- have to be driven by voltage source

- have a second-order LC output filter

- the DC output voltage is directly proportional to the amplitude of the input voltage

- the peak-to-peak and RMS through the filter capacitor is relatively low

- the conduction loss in the ESR of the filter capacitor is low

High frequency integrated

transformer

Page 13: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

13

High frequency integrated

transformer

The transformer turn ratio:2

1

N

Nnt =

The real transformer turn ratio:ondary

primary

L

Lkn

sec

=

‘k’ is the transformer coupling ratio.

21

2

t

LL

n

LL = λ+=+= 1n

L

LLnn

m

rmt

Equivalent load resistance

2

2

==

s

pLLac N

NRnRR

Transformation the load resistance to the primary side of transformer

Equivalent load resistance

The half-wave rectifier:

2

22

πL

ac

RnR =

The center-tapped transformer and the bridge rectifier:

2

28

πL

ac

RnR =

Page 14: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

14

LLC design procedureThe design procedure of LLC converter was taken from STMicroelectronics, „AN2450 - LLC resonant half-bridge converter design guideline”,STMicroelectronics Application Note, 2007 [8].

Design specification:

– Input voltage range: Vdc.min - Vdc.max

– Nominal input voltage: Vdc.nom

– Regulated output voltage: Vout

– Maximum output power: Pout

– Resonant frequency: fr

– Maximum operating frequency: fmax

LLC design procedure

Additional info:

– Parasitic capacitance of the MOSFETs half-bridge: Czvs

– Dead time of driving circuit: TD

General criteria for the design:

– The converter will be designed to work at resonance at nominal input voltage.

– The converter must be able to regulate down to zero load at maximum input

voltage.

– The converter will always work in ZVS in the whole operating range.

LLC design procedure

The converter circuit

Page 15: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

15

LLC design procedure

Step 1 - to fulfil the first criterion, impose that the required gain at nominal inputvoltage equals unity and calculate the transformer turn ratio:

out

nomDC

nomDC

outnom V

Vn

V

VnM ,

, 2

112 =⇒==

Step 2 - calculate the max. and min. required gain at the extreme values of the input voltage range:

min,max 2

DC

out

V

VnM =

max,min 2

DC

out

V

VnM =

LLC design procedure

*Taken from „AN2450 - LLC resonant halfbridge converter design guidline”,STMicroelectronics Application Note, 2007 [8].

LLC design procedureStep 3 - calculate the maximum normalized operating frequency (according to the definition):

rn f

ff max

max, =

Step 4 - calculate the effective load resistance reflected at transformer primaryside:

out

outLac P

VnRnR

22

22

2

88

ππ==

Step 5 - impose that the converter operates at maximum frequency at zero load and maximum input voltage, calculating the inductance ratio

1

12

max,

2max,

min

min

−−=

n

n

f

f

M

Page 16: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

16

LLC design procedureStep 6 - calculate the max Q value to work in the ZVS operating region atminimum input voltage and full load condition

1

195.0%95

2max

2max

maxmax1 −

+=⋅=M

M

MQQZVS λ

λ

Step 7 - calculate the max Q value to work in the ZVS operating region at no-load condition and maximum input voltage

( ) ZVSac

D

n

nZVS CR

T

f

fQ

λλλ

π −+= 2

max,

max,2

1

2

Step 8 - choose the max quality factor for ZVS in the whole operating range, such that:

{ }21,min ZVSZVSZVS QQQ ≤

strayOSSZVS CCC += 2

LLC design procedureStep 9 - calculate the minimum operating frequency at full load and minimum input voltage, according to the following approximate formula:

−+

=

+

4

max

1max

min

11

11

1

Q

Q

r

ZVS

M

ff

λ

Step 10 - calculate the characteristic impedance of the resonant tank and allcomponent values

acZVS RQZ =0

02

1

ZfC

rr π

=r

r f

ZL

π20=

λr

m

LL =

LLC design procedure

Step 11 - calculate the transformer parameters

( ) mrSOp LLL +=

( ) rSSp LL =

λ+= 1nnt

primary inductance (with secondary windings open)

primary inductance (with secondary windings shorted)

transformer turn ratio

Next, choose a core with an appropriate AL value.( )

AL

LN SOp

p =t

ps n

NN =

Find experimentally the core gap (with secondary winding shorted) to satisfy appropriate Lr value.

Page 17: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

17

MOSFETs protection

RC Snubbers

MOSFETs protection

MOSFETs protectionRC snubber designing

Step 1 – you have to know parasitic L or parasitic C of the MOSFET half bridge. Calculate characteristic impedance of resonant circuits:

If we know L

If we know C

fLZ π2=

fCZ

π2

1=f is the ringing frequency

We assume that the initial value of the snubber resistor R = Z.

Page 18: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

18

MOSFETs protection

Then we can calculate value of the snubber capacitor C:

fRC

π1=

Power dissipation of the resistor is given by expression:

swfCVP 2=

Where V is the voltage across MOSFET when it is OFF, fsw

is the converter switching frequency.

MOSFET driversThe MOSFET drivers have following features:

- driving high capacitive load

- supply MOSFET gate with high current

- low propagation delay

- low rise and fall times

- low output impedance

MOSFET drivers

*Taken from „AN-978 HV floating MOS-Gate driver Ics”, International Rectifier Application Note, [6].

Page 19: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

19

MOSFET driversSupplying the high-side driver by bootstrap capacitor.

Resonant converters controllersThe resonant converter controllers features:

- variable frequency control of resonant half or full-bridge

- high accuracy oscillator

- converter protection functions: frequency shift and latched shutdown

- Interface with PFC controller

- Latched disable input

- Burst-mode operation at light load

- Non-linear soft-start for monotonic output voltage rise

Resonant converters controllers

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Page 20: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

20

Resonant converters controllers

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Resonant converters controllers

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Resonant converters controllers

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Page 21: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

21

Resonant converters controllers

Burst mode

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Resonant converters controllers

*Taken from „L6599 High-Voltage resonant controller,STMicroelectronics Data Sheet, 2006, [15].

Soft start

High Power MOSFETs

*Taken from „ IXFN60N80P PolarHV Power HiperFET MOSFET, IXYS Corporation Data Sheet, 2006, [14].

Page 22: Advanced Industrial Electronics - ue.pwr.wroc.plue.pwr.wroc.pl/.../UE_AAE_13_Resonant_voltage_converters.pdf · Advanced Industrial Electronics Resonant Power Converters References

22

High Power, Fast Switching

Schottky Diodes

*Taken from „C2D05120-Silicon Carbide Schottky Diode, Cree Data Sheet, 2006, [10].

Summary


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