Note: 8. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability.
Package Thermal Data
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @TA = +25°C PD 0.36 W
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = +25°C RθJA 347 °C/W
Recommended Operating Conditions
Symbol Parameter Min Max Unit
VBIAS Supply Voltage Range 4.5 30 V
VOUT OUT Voltage Range 0.8 30
ILED LED Pin Current (Note 5) 10 100 mA
TA Operating Ambient Temperature Range -40 +125 °C
Notes: 4. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout. 5. Subject to ambient temperature, power dissipation and PCB.
IEBO Emitter Cutoff Current (Note 7) VEB = 4V, IC = 0 — — 0.5 µA
VCE(SAT) Collector-Emitter Saturation Voltage (Note 6) IC = 10mA, IB = 1mA — — 0.3 V
VBE(ON) Base-Emitter Turn-On Voltage VCE = 5.0V, IC = 2.0mA 0.30 1.10 V
hFE DC Current Gain (Note 6) VCE = 5V, IC = 150mA 100 — — —
R1 Input Resistance — 7 10 13 kΩ
*Characteristics of transistor only. Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished good level due to test conditions changed after packaging multi-dies to form an application circuit.
The AL5802LP4 is designed for driving low current LEDs with typical LED currents of 10mA to 100mA. It provides a cost effective way of driving
low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there
is no need for external components like inductors, capacitors and switching diodes.
Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by
sensing the voltage across an external resistor REXT. Q1 uses its VBE as reference to set the voltage across REXT and controls the base current into
Q2. Q2 operates in linear mode to regulate the LED current. The LED current is:
ILED = VBE(Q1) / REXT
From this, for any required LED current the necessary external resistor REXT can be calculated from:
REXT = VBE(Q1) / ILED Two or more AL5802LP4 can be connected in parallel to construct higher current LED strings as shown in Figure 13. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802LP4's thermal resistance. The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string.
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
X2-DFN1310-6
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