CAUTION/WARNING - MaxdatLetoltesek/Hejetesito Tablazatok/SanKen... · CAUTION/WARNING The...

CAUTION / WARNING

The information in this publication has been carefully checked and is believed to beaccurate; however, no responsibility is assumed for inaccuracies.Sanken reserves the right to make changes without further notice to any products herein inthe interest of improvements in the performance, reliability, or manufacturabilityof its products. Before placing an order, Sanken advises its customers to obtain thelatest version of the relevant information to verify that the information being relied uponis current.Application and operation examples described in this catalog are quoted for the solepurpose of reference for the use of the products herein and Sanken can assume noresponsibility for any infringement of industrial property rights, intellectual propertyrights or any other rights of Sanken or any third party which may result from its use.When using the products herein, the applicability and suitability of such products for theintended purpose or object shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its products, theoccurrence of failure and defect of semiconductor products at a certain rate is inevitable.Users of Sanken products are requested to take, at their own risk, preventative measuresincluding safety design of the equipment or systems against any possible injury, death, firesor damages to the society due to device failure or malfunction.Sanken products listed in this catalog are designed and intended for the use as componentsin general purpose electronic equipment or apparatus (home appliances, office equipment,telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.When considering the use of Sanken products in the applications where higher reliabilityis required (transportation equipment and its control systems, traffic signal controlsystems or equipment, fire/crime alarm systems, various safety devices, etc.), pleasecontact your nearest Sanken sales representative to discuss and obtain written confirmationof your specifications.The use of Sanken products without the written consent of Sanken in the applicationswhere extremely high reliability is required (aerospace equipment, nuclear power controlsystems, life support systems, etc.) is strictly prohibited.Anti radioactive ray design is not considered for the products listed herein.This publication shall not be reproduced in whole or in part without prior written approvalfrom Sanken.

••

•

•

•

•

•

••

•

1

Transistor Selection Guide ..2

Reliability.........................6

Temperature Derating in

Safe Operating Area.........9

Accessories.....................9

Switching Characteristics

Test Circuit ....................10

Symbols and Term...........10

A1186............................11

A1215............................12

A1216............................13

A1262............................14

A1294............................15

A1295............................16

A1303............................17

A1386/A ........................18

A1488/A ........................19

A1492............................20

A1493............................21

A1494............................22

A1567............................23

A1568............................24

A1667/8.........................25

A1673............................26

A1693............................27

A1694............................28

A1695............................29

A1725............................30

A1726............................31

A1746............................32

A1859/A ........................33

A1860............................34

A1907............................35

A1908............................36

A1909............................37

B1257............................38

B1258............................39

B1259............................40

B1351............................41

B1352............................42

B1382............................43

B1383............................44

B1420............................45

B1559............................46

B1560............................47

B1570............................48

B1587............................49

B1588............................50

B1624............................51

B1625............................52

B1626............................53

B1647............................54

B1648............................55

B1649............................56

B1659............................57

C2023 ...........................58

C2837 ...........................59

C2921 ...........................60

C2922 ...........................61

C3179 ...........................62

C3263 ...........................63

C3264 ...........................64

C3284 ...........................65

C3519/A ........................66

C3678 ...........................67

C3679 ...........................68

C3680 ...........................69

C3830 ...........................70

C3831 ...........................71

C3832 ...........................72

C3833 ...........................73

C3834 ...........................74

C3835 ...........................75

C3851/A ........................76

C3852/A ........................77

C3856 ...........................78

C3857 ...........................79

C3858 ...........................80

C3890 ...........................81

C3927 ...........................82

C4020 ...........................83

C4024 ...........................84

C4064 ...........................85

C4065 ...........................86

C4073 ...........................87

C4130 ...........................88

C4131 ...........................89

C4138 ...........................90

C4139 ...........................91

C4140 ...........................92

C4153 ...........................93

C4296 ...........................94

C4297 ...........................95

C4298 ...........................96

C4299 ...........................97

C4300 ...........................98

C4301 ...........................99

C4304 .........................100

C4381/2 ......................101

C4388 .........................102

C4418 .........................103

C4434 .........................104

C4445 .........................105

C4466 .........................106

C4467 .........................107

C4468 .........................108

C4495 .........................109

C4511 .........................110

C4512 .........................111

C4517/A......................112

C4518/A......................113

C4546 .........................114

C4557 .........................115

C4662 .........................116

C4706 .........................117

C4883/A......................118

C4886 .........................119

C4907 .........................120

C4908 .........................121

C5002 .........................122

C5003 .........................123

C5071 .........................124

C5099 .........................125

C5100 .........................126

C5101 .........................127

C5124 .........................128

C5130 .........................129

C5239 .........................130

C5249 .........................131

C5271 .........................132

C5287 .........................133

C5333 .........................134

C5370 .........................135

D1769 .........................136

D1785 .........................137

D1796 .........................138

D2014 .........................139

D2015 .........................140

D2016 .........................141

D2017 .........................142

D2045 .........................143

D2081 .........................144

D2082 .........................145

D2083 .........................146

D2141 .........................147

D2389 .........................148

D2390 .........................149

D2401 .........................150

D2438 .........................151

D2439 .........................152

D2493 .........................153

D2494 .........................154

D2495 .........................155

D2557 .........................156

D2558 .........................157

D2560 .........................158

D2561 .........................159

D2562 .........................160

D2589 .........................161

SAH02 ........................162

SAH03 ........................163

Discontinued Parts

Guide ........................164

Contents SANKEN POWER TRANSISTORS

2

Collector Current IC(A)

Transistor Selection Guide

VCEO-IC

Col

lect

or–E

mitt

er V

olta

geV

CE

O(V

)

800 C3678 C3679 C3680 C5124C4020 C4300 C4301C4299 C5002C4304 C5003C4445C4908

600 C5249 C4706550 C4517 C4518 C3927

C4517A C4518A C4557C5239 C5287

500 C3830 C3831C4907

400 C4073 C3832 C4138 C3833 C4139 C4140C4418 C3890 C4296 C4297 C4298 C4662 C4130 C5071 C4434C5130 C4546

380 D2141300 C2023

C5333250 D2017230 A1294 A1295

C3263 C3264200 A1668 D2016 C5271 A1493 A1494

C4382 D2557 C3857 C3858D2558

180 A1859A A1386A A1216C4883A A1492 C2922

A1673C3519AC3856C4388

160 A1215 A1386C2921C3519

150 A1667 B1559 A1186 B1570 A1303 B1647 B1648A1859 B1587 B1560 D2401 A1860 B1649 D2561C4381 D2389 B1588 C3284 D2560C4883 D2438 C2837 C4886 D2562

D2390D2439

140 A1695A1909C4468C5101

120 D2015 D1769 C3834 A1694 B1259 B1382 B1383D1785 C3835 A1908 D2081 B1420 D2083D2045 C4153 C4467 D2082

C5100110 B1624

B1625B1626B1659D2493D2494D2495D2589

100 B125880 C3852A A1488A A1693

C3851A A1725D2014 A1726

A1907C4466C4511C4512C5099

60 C3852 A1262 A1568A1488 B1351B1257 B1352C3179 C4065C3851D1796

50 C4495 C4024 A1567 C4131 A1746C4064

40 C5370 2 3 4 5 6 7 8 10 12 14 15 16 17 18 25

C5271

C4073

C4418

C4662

C3832 C3890

C4130

C4138 C4296

C3833 C4297

C5071

C4139 C4298

C4434

C4140

C5130

C4546

C3830 C4907

C3831

C5249

3

550

600

800

3

5

10

14

3

5

7

900

(1000)

900

200

400

400

5

5

7

10

12

15

18

5

7

6

103

250

500

600

Transistors for Switch Mode Power Supplies (for AC80–130V input)

Transistors for Switch Mode Power Supplies (for AC180–280V input)


VCBO(V) VCEO(V) IC(A) MT-25 FM20 MT–100 FM100

(TO220) (TO220F) (TO3P) (TO3PF)

VCBO(V) VCEO(V) IC(A) MT-25 FM20 MT–100 FM100

(TO220) (TO220F) (TO3P) (TO3PF)

C5239 C4517(A)

C4518(A) C5287

C3927 C4557

C4706

C4020 C4908

C3678 C4299

C4304 C4445

C3679 C4300

C3680 C4301

500

600

Type No. P C(W) VCEO(V) IC(A) hFE(min) f T(MHz) Package

2SA1860/2SC4886 80

2SA1186/2SC2837 100

2SA1303/2SC3284 125

2SA1386/2SC3519 130

2SA1386A/2SC3519A 130

2SA1294/2SC3263 130

2SA1215/2SC2921 150

2SA1216/2SC2922 200

2SA1295/2SC3264 200

4

Transistors for Audio Amplifiers

FM20 (TO220F)

MT-25 (TO220)

MT-100 (TO3P)

FM100 (TO3PF)

MT-100 (TO3P)

FM100 (TO3PF)

MT-100 (TO3P)

MT-200 (2-screw mount)

Single Emitter

50 20

LAPT (Multi emitter for High Frequency)


80

120

140

180

140

180

200

6

8

10

15

10

15

15

17


2SA1725/2SC4511 30

2SA1726/2SC4512 50

2SA1693/2SC4466 60

2SA1907/2SC5099 60

2SA1908/2SC5100 75

2SA1694/2SC4467 80

2SA1909/2SC5101 80

2SA1673/2SC4388 85

2SA1695/2SC4468 100

2SA1492/2SC3856 130

2SA1493/2SC3857 150

2SA1494/2SC3858 200

150

160

180

230

160

180

230

14

10

14

15

17

50

50

60

50

40

35

50

40

35

FM100 (TO3PF)

MT-100 (TO3P)


Single Transistors


2SB1626

2SD2495

2SB1659

2SD2589

2SB1624

2SD2493

2SB1625

2SD2494

2SB1587

2SD2438

2SB1559

2SD2389

2SB1588

2SD2439

2SB1649

2SD2562

2SB1560

2SD2390

2SB1647

2SD2560

2SB1570

2SD2401

2SB1648

2SD2561

5

FM20 (TO220F)

MT-25 (TO220)

MT-100 (TO3P)

FM100 (TO3PF)

MT-100 (TO3P)

FM100 (TO3PF)

MT-100 (TO3P)


Darlington Transistors

6

8

10

15

10

15

12

17

5000

30

50

60

60

75

80

80

85

100

130

150

200

110

150

200

150

150

Type No. P C(W) VCEO(V) IC(A) hFE(min) f T(MHz) Package Remarks

2SC4495

2SC4883

2SC4883A

2SA1859

2SA1859A

50

150

180

–150

–180

Temperature compensation Transistors and Driver Transistors

25

20

20

3

2

–2

500

60

60

40

120

60

FM20 (TO220F)

Temperature compensation

Driver, Complement 2SA1859

Driver, Complement 2SA1859A

Driver, Complement 2SC4883

Driver, Complement 2SC4883A

100

60

100

60

100

60

100

60

65

80

65

80

50

55

45

70

50

55

45

70

50

55

45

70


4. Applications Considered on Reliabilitya) The type and specifications of our transistors and semiconductor

devices vary depending on the application that will be required bytheir intended use. Customer should, therefore, determine which type will best suit their purposes.

b) Note that high temperratures or long soldering periods must be avoid-ed during soldering, as heat can be transmitted through externalleads into the interior. This may cause deterioration if the maximumallowable temperature is exceeded.

c) When using the trasistor under pulse operation orinductive load, the SafeOperating Area (SOA) forthe current and voltage mustnot be exceeded (Figure 2).

d) The reliability of transistors and semiconductor devices is greatlyaffected by the stress of junction temperature. If we accept in generalproceed in the form of Arrhenius equation, the relationship betweenthe junction temperature Tj and lifespan L can be expressed withthe following empirical formula

n L = A＋Tj

⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)

It is, hence, very important to derate the junction temperature toassure a high reliability rate.

5. Reliability TestSanken bases its test methods and conditions on the followingstandards. Tests are conducted under these or stricter conditions,The details of these are shown in Table 1.• MIL-STD-202F (Test method for electrical and electronic com-

ponents)• MIL-STD-750C (Test method for semiconductor equipment)• JIS C 7021 (Endurance test and environmental test method for

individual semiconductor devices)• JIS C 7022 (Endurance test and environmental test method for

integrated circuits of semiconductors)

6. Quality AssuranceTo ensure high quality and high reliability, quality control and produc-tion process control procedures are executed from the receipt of partsthrough the entire production process. Our quality assurance systemis shown in Figure 3.

1. Definition of ReliabilityThe word reliablity is an abstract term which refers to the degree towhich equipment or components, such as semiconductor devices, areresistant to failure. Reliability can be and is often measured quantitatively.Reliability is defined as “whether equipment or components (such asa semiconductor device) under given conditions perform the same atthe end of a given period as at the beginning.”

2. Reliability FunctionIn general, there are three types of failure modes in electronic com-ponents:

1. Infant failure2. Random failure3. Wear-out failure

These three types of failure describe “bathtub curve” shown inFigure 1. Infant failures can be attributed to trouble in the productionprocess and can be eliminated by aging befor shipment to customers,stricter control of the production process and quality control measures.Semiconductor devices such as transistors, unlike electronic equipment,take a considerable amount of time to reach the stage where wear-out failure begins to occur. And, as shown in Figure 1 (b), they also lastmuch longer than electronic equipment. This shows that the longer theyare used the more stable they actually become.The reduction that occurs in random failures can be approximated byWeibull distribution, logarithmic normal distribution, or gamma distri-bution, but Weibull distribution best expresses the phenomenon thatoccurs with transistors.

3. Quantitative Expression of ReliabilityWhile there are many ways to quantitatively express reliability, twocriteria, failure rate and life span, are generally used to define thereliability of semiconductors such as transistrors.a) Failure Rate (FR)

Failure rate often refers to instantaneous failures or λ (t). In generalof reliability theory, however, the cumulative failure rate, or Relia-bility Index, is

F ⋅ R = N ⋅ t

⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)

Where N = Net quantity used, andr(t) = Net quantitiy failed after t hours

If we assign t the arbitrary

F ⋅ R = N × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)

In situations where the cumulative failure rate is small, failure is ex-pressed in units of one Fit, 10-9 (failures/hours).

b) Life Span(L)Life Span can be expressed in terms of average lifespan or as MeanTime Between Failure (MTBF), but assuming that random failureis shown by the Index Distribution [λ (t) = constant], then Life Spanor L can be shown by the equation

L = F ⋅ R

(hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3)

6

Reliability

r(t)

(a)

(b)

General ElectronicEquipment orComponents

SemiconductorDevices

Time (t)

Fai

lure

Rat

e (λ

)

Estimation

InitialFailure

Random orChance Failure

Wear-outFailure

Figure 1 Bath Tub Curve

r

1

SOA(Safe Operating Area)

Max.Allowable Current

Max

.A

llow

able

Vol

tage

Vce

o(M

ax)

Collector-Emitter Voltage Vce(V)

Col

lect

or C

urre

nt Ic

(A)

Secondary Breakdown Locus

Max Allowable Power

Figure 2 SOA

B

Material Purchasing

Incoming Inspection

Production Process

Physical and Chemical Inspection

Quality ControlProduction Process Control

Specialized Tests for all units

Shipping Inspection

Shipment

MarkingPacking

Periodical Quality Assurance Test 1. Operational Life (continuous) Test 2. Operational Life (intermittent) Test 3. High Temperature Storage Test 4. Low Temperature Storage Test 5. Moisture Resistance Test 6. Heat Cycle Test 7. Heat Shock Test 8. Soldering Heat Test 9. Vibaration Test10. Drop Test

7

Test

Continuous Operations Test

Intermittent Operation Test

High Temperature Storage Test

Low Temperature Storage Test

Moisture Resistance Test

Heat Cycle Test

Heat Shock Test

Soldering Heat Test

Vibrations Test

Drop Test

Details of the Testing Method

Collector dissipation with maximum junction temperature is applied continuously atroom temperature to judge lifespan and reliability under transistor operating conditions.

Power equal to that used in the Continuous Operations Test is applied intermittentlyto test the transistor’s lifespan and reliability under on and off conditions.

Confirms the highest storage temperature and operating temperature of transistors.

Confirms the lowest storage temperature of transistors.

Tested at RH=85% and TA=85°C for the effects of the interaction betweentemperature and humidity, and the effects of surface insulation between electrodesand high temperature/high humidity.

Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristicchanges caused by thermal expansion and shrinkage of the transistor.

Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check formechanical faults and characteristic changes caused by thermal expansion andshrinkage of transistor.

Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating planein solder bath to check for characteristic changes caused by drastic temperature risesof exterior lead wire.

Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for2 hours each (total 6 hours) to check for characteristic changes caused by vibrationduring operation and transportion.

Tested by dropping 10 times from 75 cm height to check for mechanical enduranceand characteristic changes caused by shock during handling.

Table 1: Test Methods and Conditions

LTPD(%)

*5/1000hrs

5/1000hrs

5/1000hrs

5/1000hrs

5/1000hrs

5

5

5

5

5

Figure 3 Quality Assurance System

∗ Reliability Standard : 60%

Reliability

7. Notes Regarding Storage, Characteristic Tests, and HandlingSince reliability can be affected adversely by improper storage

environment and handling methods during Characteristic tests,

please observe the following cautions.

a) Cautions for Storage

1. Ensure that storage conditions comply with the standard

temperature (5 to 35°C) and the standard relative humidity

(arround 40 to 75%) and avoid storage locations that

experience extreme changes in temperature or humidity.

2. Avod locations where dust or harmful gases are present,

and avoid direct sunlight.

3. Reinspect for rust in leads and solderbility that have been

stored for a long time.

b) Cautions for Characteristic Tests and Handling

1. When characteristic tests are carried out during inspection

testing and other standard test periods, protect the transistor

from surges of power from the testing device, shorts between

the transistor and the heatsink

c) Silicone Grease

When using a heatsink, please coat the back surface of the

transistor and both surfaces of the insulating plate with a thin

layer of silicone grease to improve heat transfer between the

transistor and the heatsink.

Recommended Silicone Grease

• G-746 (Shin-Etsu Chemical)

• YG6260 (Toshiba Silicone)

• SC102 (Dow Corning Toray Silicone)

d) Torque when Tightening Screws

Thermal resistance increases when tightening torque is small,

and radiation effects are decreased. When the torque is too

high, the screw can cut, the heatsink can be deformed, and/or

distortion can arise in the product’s frame. To avoid these

problems, Table 2 shows the recommended tightening torques

for each product type.

Table 2. Screw Tightening Torques

Package Screw Tightening Torque

MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm)

FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm)

MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm)

FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm)

MT200 (TO-3P two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)

e) Soldering Temperature

In general, the transistor is subjected to high temperatures when

it is mounted on the printed circuit board, whether from flow solder

from a solderbath, or, in hand operations from a soldering iron.

The testing method and test conditions (JIS-C-7021 standards)

for a transistor’s heat resistance during soldering are:

At a distance of 1.5mm from the transistor’s main body,

apply 260°C for 10 seconds, and 350°C for 3 seconds.

However, please stay well within these limits and for as short

a time as possible during actual soldering.

8

Reliability

9

Temperature Derating in Safe Operating Area

Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operatingtemperature.This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of asilicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperaturerange of 260°C to 360°C.Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point isset at 260°C.

0

100

50

0 50 100 150 200 250 300

S/B limiting area

Pc limiting area

Case Temp Tc (°C)

Col

lect

or C

urre

ntD

erat

ing

coef

ficie

nt D

F (

%)

Tc=25°C

S/B limiting area

Pc limiting area

Collector-Emitter Voltage VCE (V)

Col

lect

or C

urre

nt Ic

(A

)

Fig.1 Safe Operating Area

Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safeoperating area in order to obtain the derated current.

Accessories Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested. Sanken transistor case is a standard size, and can be used with any generally sold accessories.

ø3.75

5.0±0.1

R0.519.4±0.1

14.0

±0.

1

7.0

+0.1–0

ø3.2

7.0

R0.524.0

20.0

±0.

1

±0.1

10.0

+0.1–0

+0.2–0

+0

.2–0

2–ø3.2

R0.5

+0.1–0

39.0±0.1

24.0

±0.

1

12.0

±0.

1

24.38±0.1

6.0±

0.2

2.5±0.2 1.5±0.2

3.7±

0.1

3.1

±0.

1

• Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance • Insulation Bush for MT-25 (TO220)

Type Name:Mold(10)Mica Type Name:Mold(14)Mica Type Name:Mold(9)Mica

Reliability

Fig.2 Derating Curve of Safe Operating Area

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

VFEC

fT

Cob

Item

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Operating Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Emitter-Collector Diode Forward Voltage

Cut-off Frequency

Collector Junction capacitance

Definition

DC Voltage between Collector and Base when Emitter is open

Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction

DC voltage between Emitter and Base when Collector is open

DC current passing through Collector electrode

DC current passing through Base electrode

Power consumed at Collector junction

Maximum allowable temperature value at absolute maximum ratings

Maximum allowable range of ambient temperature at non-operation

Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base

Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base

Breakdown voltage between Collector and Emitter when Base is open

Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)

DC voltage between Collector and Emitter under specified saturation conditions

DC voltage between Base and Emitter under specified saturation conditions

Diode forward voltage between Emitter and Collector when Base is open

Frequency at the specified voltage and current where hFE is 1 (0dB)

Junction capacitance between collector and Base at a specified voltage and frequency

Typical Switching Characteristics (Common Emitter)

10

Switching Characteristics Test Circuit/Measurement Wave Forms

VCC RL IC VB2 VBB1 VBB2 IB1 IB2 tr tstg tf

(V) (Ω) (A) (V) (V) (V) (A) (A) (µs) (µs) (µs)

20µs

+VBB2

–VBB1

R2

R1

–VCC

0

D.U.TIB2

IC

RL

IB150µs

0

0

GND

0.9IC

IB2

IB1

IC

ton

0BaseCurrent

CollectorCurrent 0.1IC

tstg tf

0

0

20µs

+VBB1

–VBB2

R1

R2

VCC

0.9IC

IB2

IB1

ICton

0

0

D.U.TIB1

IC

RL

IB2

50µs

0

0

GND

0.1IC

tstg tf

0

0

BaseCurrent

CollectorCurrent

Symbols

NPN

PNP

Switching Characteristics

• Ta=25°C unless otherwise specified.

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1186

–150

–150

–5

–10

–2

100(Ta=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Absolute maximum ratings Electrical Characteristics


External Dimensions MT-100(TO3P)Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1186

–100max

–100max

–150min

50min∗–2.0max

60typ

110typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–3A

IC=–5A, IB=–0.5A

VCE=–12V, IE=1A

VCB=–80V, f=1MHz

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VB2(V)

5

IB2(mA)

500

ton(µs)

0.25typ

tstg(µs)

0.8typ

tf(µs)

0.2typ

IB1(mA)

–500

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0ga. Type No.b. Lot No.

IC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j -a–t Characteristics

IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

Pc–Ta Derating

00

–2

–4

–6

–8

–10

–1 –2 –3 –4

Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

–400mA

IB=–20mA

–200mA –160mA

–120mA

–100mA

–80mA

–60mA

–40mA

0

–3

–2

–1

0 –0.5 –1.0 –2.0–1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –1020

50

100

300

Col lector Current IC(A)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

Safe Operating Area (Single Pulse)

–2 –10 –100 –200–0.2

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A) 10m

s

DC

Without HeatsinkNatural Cool ing

fT–IE Characteristics (Typical)

0.02 0.1 1 100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)

Emit ter Current IE(A)

Typ

0.2

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

Wi th Inf in i te heatsink

Without Heatsink

0

–10

–2

–6

–4

–8

0 –2–1

Base-Emit tor Vol tage VBE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(Cas

e Te

mp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5–0.5 –5 –1030

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

–30˚C

25˚C

(Ta=25°C) (Ta=25°C)

∗ hFE Rank O(50to100), P(70to140), Y(90to180)

LAPT 2SA1186

11

12

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1215

–160

–160

–5

–15

–4

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1215

–100max

–100max

–160min

50min∗–2.0max

50typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VB2(V)

5

IB2(mA)

500

ton(µs)

0.25typ

tstg(µs)

0.85typ

tf(µs)

0.2typ

IB1(mA)

–500

LAPT 2SA1215

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)


Pc–Ta Derating

00

–4

–8

–12

–16

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

–100mA

IB=–20mA

–600mA

–500mA

–400mA

–300mA

–200mA

–150mA

–750mA

0

–3

–2

–1

0 –0.2 –0.4 –1.0–0.6 –0.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10 –1510

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ


–2 –10 –100 –200–0.2

–1

–0.5

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)

Wi thout HeatsinkNatural Cool ing

DC

10ms


0.02 0.1 1 100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

θ j -a–t Characteristics

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

0

–15

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(Cas

e Te

mp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5–0.5 –5 –10 –1530

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

With Inf in i te heatsink

Without Heatsink




(Ta=25°C) (Ta=25°C)


External Dimensions MT-200


∗ hFE Rank O(30to60), Y(50to100), P(70to140), G(90to180)

13


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1216

–180

–180

–5

–17

–5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



SymboI

VCBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1216

–100max

–100max

–180min

30min∗–2.0max

40typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–180V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–8A

IC=–8A, IB=–0.8A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VB2(V)

5

IB2(A)

1

ton(µs)

0.3typ

tstg(µs)

0.7typ

tf(µs)

0.2typ

IB1(A)

–1

LAPT 2SA1216(Ta=25°C) (Ta=25°C)



VCE(sat)–IB Characteristics (Typical)

Pc–Ta Derating

00

–5

–10

–15

–17

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–1

.5A

–50mA

–100mA

IB=–20mA

–700mA

–500mA

–1A

–400mA

–300mA

–200mA

–150mA

0

–3

–2

–1

0 –0.2 –0.4 –1.0–0.6 –0.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A


–2 –10 –100 –300–0.2

–1

–0.5

–10

–50

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

0.02 0.1 1 100

20

40

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1710

50

100

200

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –10–0.5 –5 –1710

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

IC–VBE Temperature Characteristics (Typical)

0

–17

–15

–10

–5

0 –2 –2.4–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

12

5˚C

(Ca

se T

em

p)

25

˚C(C

ase

Te

mp

)–

30

˚C(C

ase

Te

mp

)


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


14

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)

External Dimensions MT-25(TO220)Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1262

–60

–60

–6

–4

–1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1262

–100max

–100max

–60min

40min

–0.6max

15typ

90typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–60V

VEB=–6V

IC=–25mA

VCE=–4V, IC=–1A

IC=–2A, IB=–0.2A

VCE=–12V, IE=0.2A

VCB=–10V, f=1MHz

VCC(V)

–20

RL(Ω)

10

IC(A)

–2

VBB2(V)

5

IB2(mA)

200

ton(µs)

0.25typ

tstg(µs)

0.75typ

tf(µs)

0.25typ

IB1(mA)

–200

2SA1262(Ta=25°C) (Ta=25°C)



Pc–Ta DeratingSafe Operating Area (Single Pulse)

–10 –50 –100–2 –5

–1

–0.5

–0.1

–10

–5


Co

lle

cto

r C

urr

en

t IC

(A)



0

–1.5

–1.0

–0.5

–0.1 –0.1–0.5 –0.5 –1

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–3A

–2A

–1A

hFE–IC Characteristics (Typical)

1ms10m

s100msDC


0

–4

–3

–2

–1

0 –1.5–0.5 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

hFE–IC Temperature Characteristics (Typical)(VCE=–4V)

–0.02 –0.1 –1 –420

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.01 –0.1 –1 –420

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–0.5

00

–2

–1

–3

–4

–2–1 –3 –4 –5 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–30mA

–40mA

–50mA–60mA

–20mA

–10mA

IB=–5mA

–80mA

0.7

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0.005 0.01 0.05 0.50.1 1 30

10

20

30

60

50

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

VBB1(V)

–10

Application : Audio and General Purpose

B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b



Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1294

–230

–230

–5

–15

–4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1294

–100max

–100max

–230min

50min∗–2.0max

35typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–230V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(mA)

500

ton(µs)

0.35typ

tstg(µs)

1.50typ

tf(µs)

0.30typ

IB1(mA)

–500

LAPT 2SA1294(Ta=25°C) (Ta=25°C)




hFE–IC Temperature Characteristics (Typical)


Pc–Ta Derating

00

–5

–10

–15

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–3

.0A

–50mA

–100mA

IB=–20mA

–1.5A–1.0A

–500mA

–300mA

–200mA

0

– 3

–2

–1

0 –0.5 –1.0 –2.0–1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10–5–0.5 –1510

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–3 –10 –100 –300

–0.1

–0.05

–1

–0.5

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)

10ms

DC


0.02 0.1 1 100

20

40

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

) θ j -a–t Characteristics


130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150

0

–15

–10

–5

0 –2 –2.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

aseT

emp)

25˚C

(Cas

eTem

p)–3

0˚C

(Cas

eTem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –15–1010

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–2.0A

VBB1(V)

–10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


15

∗ hFE Rank O(50to100), Y(70to140)

∗ hFE Rank O(50to100), Y(70to140)

16

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1295

–230

–230

–5

–17

–5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1295

–100max

–100max

–230min

50min∗–2.0max

35typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–230V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

LAPT 2SA1295(Ta=25°C) (Ta=25°C)

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(mA)

500

ton(µs)

0.35typ

tstg(µs)

1.50typ

tf(µs)

0.30typ

IB1(mA)

–500

VBB1(V)

–10






Pc–Ta Derating

00

–5

–10

–15

–17

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–3.0

A

–50mA

–100mA

IB=–20mA

–2.0A–1.5A

–1.0A

–500mA

–300mA

–200mA

0

– 3

–2

–1

0 –0.5 –1.0 –2.0–1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10–0.5 –5 –1710

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ


–3 –10 –100 –300

–0.1

–0.05

–1

–0.5

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)

10msDC

0.02 0.1 1 100

20

40

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–10

–5

–15

–17

0 –3.2–2.4–1.6–0.8


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1710

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

CWeight : Approx 18.4ga. Type No.b. Lot No.


17


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1303

–150

–150

–5

–14

–3

125(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1303

–100max

–100max

–150min

50min

–2.0max

50typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(mA)

500

ton(µs)

0.25typ

tstg(µs)

0.85typ

tf(µs)

0.2typ

IB1(mA)

–500

LAPT 2SA1303(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–4

–8

–12

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

–100mA

IB=–20mA

–600mA

–700

mA

–500mA

–400mA

–300mA

–200mA

–150mA

0

–3

–2

–1

0 –0.2 –0.4 –1.0–0.6 –0.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1–0.5 –10–5 –1420

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–3 –10 –100 –200–0.2

–1

–0.5

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural Cooling

DC

10ms

1ms100m

s

0.02 0.1 1 100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W



(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1430

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

130

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


0

–14

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)

25˚C

(Cas

e Te

mp)

–30˚

C (C

ase

Tem

p)

VBB1(V)

–10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



18

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

–5

–15

–4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1386

–100max

–160

–160min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC＝–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

LAPT 2SA1386/1386A(Ta=25°C) (Ta=25°C)

VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(A)

1

ton(µs)

0.3typ

tstg(µs)

0.7typ

tf(µs)

0.2typ

IB1(A)

–1

VBB1(V)

–10

2SA1386A

–100max

–180

–180min

–100max

50min∗–2.0max

40typ

500typ






Pc–Ta Derating

00

–5

–10

–15

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

–100mA

IB=–20mA

–700

mA

–500mA

–400mA–300mA

–200mA

–150mA

0

–3

–2

–1

0 –0.2 –0.4 –1.0–0.6 –0.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10–0.5 –5 –1510

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ


Co

lle

cto

r C

urr

en

t IC

(A)

–3 –10 –50 –100 –200

–0.1

–0.05

–1

–0.5

–10

–40

–5

10ms


1.2SA13862.2SA1386A

1 2

DC

0.02 0.1 1 100

20

40

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150

0

–15

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C


0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


2SA1386

–160

–160

2SA1386A

–180

–180

19

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

–6

–4

–1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1488

–100max

–60

–60min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=–6V

IC=–25mA

VCE=–4V, IC=–1A

IC=–2A, IB=–0.2A

VCE=–12V, IE=0.2A

VCB=–10V, f=1MHz

2SA1488/1488A(Ta=25°C) (Ta=25°C)

VCC(V)

–12

RL(Ω)

6

IC(A)

–2

VBB2(V)

5

IB2(mA)

200

ton(µs)

0.25typ

tstg(µs)

0.75typ

tf(µs)

0.25typ

IB1(mA)

–200

VBB1(V)

–10

2SA1488A

–100max

–80

–80min

–100max

40min

–0.5max

15typ

90typ





00

–2

–1

–3

–4

–2–1 –3 –4 –5 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–30mA

–40mA

–50mA–60mA

–20mA

–10mA

IB=–5mA

–80mA

0

–4

–3

–2

–1

0 –1.5–0.5 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)


0.7

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 50 1003 5

–1

–0.5

–0.05

–0.1

–10

–5


Co

lle

cto

r C

urr

en

t IC

(A)



0

–1.5

–1.0

–0.5

–0.1 –0.1–0.5 –0.5 –1

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–3A

–2A

–1A


–0.01 –0.1 –1 –420

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–0.5

1ms10m

s

100ms

DC

150x150x2

50x50x2

100x100x2

(VCE=–4V)

–0.02 –0.1 –1 –420

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.005 0.01 0.05 0.50.1 1 30

10

20

30

60

50

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


Natural CoolingSilicone Grease

Heatsink: Aluminumin mm

External Dimensions FM20 (TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


2SA1488A

–80

–80

2SA1488

–60

–60


20


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1492

–180

–180

–6

–15

–4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1492

–100max

–100max

–180min

50min∗–2.0max

20typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–180V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–5A, IB=–0.5A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(A)

1

ton(µs)

0.6typ

tstg(µs)

0.9typ

tf(µs)

0.2typ

IB1(A)

–1

2SA1492(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–5

–10

–15

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–1A

–50mA

–0.1A

IB=–20mA

–0.6A

–0.4A

–0.2A

0

– 3

–2

–1

0 –0.5 –1.0 –2.0–1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10–0.5 –5 –1510

100

50

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–3 –10 –100 –200–0.1

–1

–0.5

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

10ms

3ms

100ms


0.02 0.1 1 100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W



130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150

0

–15

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

VBB1(V)

–10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


21


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1493

–200

–200

–6

–15

–5

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1493

–100max

–100max

–200min

50min∗– 3.0max

20typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–200V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–5A

IC=–10A, IB=–1A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1493(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–5

–10

–15

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–1

.5A

IB=–50mA

–100mA

–600mA–1A

–400mA

–200mA

0

–3

–2

–1

0 –1 –2 –4–3

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–15A

–10A

–5A

–0.02 –0.1 –1 –10–0.5 –5 –1510

100

50

300


DC

Cu

rre

nt

Ga

in h

FE

Typ

–2 –10 –100 –300–0.1

–1

–0.5

–10

–50

–5


Co

lle

cto

r C

urr

en

t IC

(A)

3ms


DC 100ms

20ms10ms

0.02 0.1 1 100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)

(VCE=–4V)


Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–15

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

eTem

p)25

˚C (

Cas

eTem

p)–3

0˚C

(C

aseT

emp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(mA)

500

ton(µs)

0.3typ

tstg(µs)

0.9typ

tf(µs)

0.2typ

IB1(mA)

–500

VBB1(V)

–10


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C



∗ hFE Rank Y(50to100), P(70to140), G(90to180)


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1494

–200

–200

–6

–17

–5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1494

–100max

–100max

–200min

50min∗–2.5max

20typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–200V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–8A

IC=–10A, IB=–1A

VCE=–12V, IE=1A

VCB=–10V, f=1MHz

VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(A)

1

ton(µs)

0.6typ

tstg(µs)

0.9typ

tf(µs)

0.2typ

IB1(A)

–1

2SA1494(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–5

–10

–15

–17

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–1.5

A

–50mA

–100mA

–1A

–600mA

–400mA

–200mA

IB=–20mA

0

–3

–2

–1

0 –1 –2 –3

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–15A

–10A

–5A

–0.02 –0.1 –1 –17–10–5–0.5

50

10

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ


Co

lle

cto

r C

urr

en

t IC

(A)

–2 –10 –100 –300–0.1

–1

–0.5

–10

–50

–5

3ms


DC

100ms

20ms 10ms

0.02 0.1 1 100

30

10

20

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1720

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C


0

–17

–15

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)


1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

VBB1(V)

–10


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C

22






00

–8

–4

–12

–6

–2

–10

–2–1 –3 –4 –5 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–40mA

–60mA

–100mA

–150mA

–20mA

–10mA

–5mA

IB=

–2

00

mA


–10 –50 –100–3 –5

–1

–0.5

–0.05

–0.1

–30

–10

–5


Co

lle

cto

r C

urr

en

t IC

(A)



0

–1.5

–1.0

–0.5

–2 –100–10 –1000 –3000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1

A


–0.02 –0.1 –1 –1030

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–1V)

Typ

1ms10m

s

100msDC

–3

A

–6

A

–9

A

IC=–

12

A

0 .3

0.5

4

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .05 0.1 1 120

20

30

40

50

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


0

–12

–6

–8

–10

–4

–2

0 –1.2–0.4–0.2 –0.6 –0.8 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–1V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–1V)

–0.02 –0.1 –1 –1030

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

Pc–Ta Derating

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2



Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application : DC Motor Driver, Chopper Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1567

–50

–50

–6

–12

–3

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1567

–100max

–100max

–50min

50min

–0.35max

40typ

330typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–50V

VEB=–6V

IC=–25mA

VCE=–1V, IC=–6A

IC=–6A, IB=–0.3A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC(V)

–24

RL(Ω)

4

IC(A)

–6

VBB2(V)

5

IB2(mA)

120

ton(µs)

0.4typ

tstg(µs)

0.4typ

tf(µs)

0.2typ

IB1(mA)

–120

LOW VCE (sat) 2SA1567(Ta=25°C) (Ta=25°C)

VBB1(V)

–10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab

23


2SA1568

–60

–60

–6–12

–3

35(Tc=25°C)

150

–55 to +150

+

24

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application : DC Motor Driver, Chopper Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VFEC

fT

COB

2SA1568

–100max

–60max

–60min

50min

–0.35max

–2.5max

40typ

330typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–60V

VEB=–6V

IC=–25mA

VCE=–1V, IC=–6A

IC=–6A, IB=–0.3A

IECO=–10A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC(V)

–24

RL(Ω)

4

IC(A)

–6

VBB2(V)

5

IB2(mA)

120

ton(µs)

0.4typ

tstg(µs)

0.4typ

tf(µs)

0.2typ

IB1(mA)

–120

2SA1568(Ta=25°C) (Ta=25°C)





00

–8

–4

–12

–6

–2

–10

–2–1 –3 –4 –5 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–40mA

–60mA

–100mA

–150mA

–20mA

–10mA

IB=

–2

00

mA


–10 –50 –100–3 –5

–1

–0.5

–0.05

–0.1

–30

–10

–5


Co

lle

cto

r C

urr

en

t IC

(A)



0

–1.4

–1.0

–0.5

–7 –100–10 –1000 –3000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1

A


–0.02 –0.1 –1 –102

10

300

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–1V)

Typ

–0.02 –0.1 –1 –102

10

300

100


(VCE=–1V)

1ms10m

s100msDC

–3

A

–6

A

–9

A

IC=–

12

A

0 .3

0.5

4

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .05 0.1 1 100

20

30

50

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

fT–IE Characteristics (Typical) Pc–Ta Derating

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2

0

–12

–6

–8

–10

–4

–2

0 –1.2–0.4–0.2 –0.6 –0.8 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–1V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

DC

Cu

rre

nt

Ga

in h

FE

125˚C25˚C

–30˚C



VBB1(V)

–10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab

Built-in Diode at C–ELow VCE (sat)

B

C

E(250Ω )

Equivalent curcuit


25

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)


VCC(V)

–20

RL(Ω)

20

IC(A)

–1

VBB2(V)

5

IB2(mA)

100

ton(µs)

0.4typ

tstg(µs)

1.5typ

tf(µs)

0.5typ

IB1(mA)

–100

2SA1667/1668





00

–0.8

–0.4

–1.2

–2.0

–1.6

–4–2 –6 –8 –10


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

IB=–5mA/Step


–10 –100 –300–1

–1

–0.01

–0.1

–5


Co

lle

cto

r C

urr

en

t IC

(A)


0

–3

–2

–1

–2 –100–10 –1000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–2A

–1A–0.5A


–0.01 –0.1 –1 –240

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–10V)

Typ

–0.01 –0.1 –1 –230

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–10V)

5m

s

1m

s

20

ms

DC

0.5

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Wi thout HeatsinkNatural Cool ing1.2SA16672.2SA1668

1 2

25

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2

0

–1.6

–2

–1.2

–0.8

–0.4

0 –1.2–0.4–0.2 –0.6 –0.8 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–10V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

125˚C

25˚C

–30˚C

0.01 0.1 1 20

10

20

30

50

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ




VBB1(V)

–10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

–6

–2

–1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1667

–10max

–150

–150min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=–6V

IC=–25mA

VCE=–10V, IC=–0.7A

IC=–0.7A, IB=–0.07A

VCE=–12V, IE=0.2A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)

2SA1668

–200

–200

2SA1667

–150

–150

2SA1668

–10max

–200

–200min

–10max

60min

–1.0max

20typ

60typ

Application : TV Vertical Output, Audio Output Driver and General Purpose


26


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1673

–180

–180

–6

–15

–4

85(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1673

–10max

–10max

–180min

50min∗–2.0max

20typ

500typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–180V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–5A, IB=–0.5A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1673(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–5

–10

–15

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–1A

–50mA

–0.1A

IB=–20mA

–0.6A

–0.4A

–0.2A

0

– 3

–2

–1

0 –0.5 –1.0 –2.0–1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –1 –10–0.5 –5 –1510

100

50

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ


Co

lle

cto

r C

urr

en

t IC

(A)

–3 –10 –100 –200

–0.2

–0.1

–1

–2

–0.5

–10

–40

–5 DC

10ms

3ms

100ms


0.02 0.1 1 100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



100

80

60

40

20

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

Co

lle

cto

r C

urr

en

t IC

(A)

0

–15

–10

–5

0 –2–1


(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(A)

1

ton(µs)

0.6typ

tstg(µs)

0.9typ

tf(µs)

0.2typ

IB1(A)

–1

VBB1(V)

–10

External Dimensions FM100(TO3PF)

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



27


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1693

–80

–80

–6

–6

–3

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Absolute maximum ratings


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1693

–10max

–10max

–80min

50min∗–1.5max

20typ

150typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–80V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–2A

IC=–2A, IB=–0.2A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(A)

0.3

ton(µs)

0.18typ

tstg(µs)

1.10typ

tf(µs)

0.21typ

IB1(A)

–0.3

2SA1693(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–2

–4

–6

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–200mA

–150mA

–100mA

–80mA

–50mA

–30mA

–20mA

IB=–10mA

0

–3

–2

–1

0 –0.5 –1.0 –1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–6A

–4A–2A

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–5 –10 –100–50–0.1

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

10ms100ms

0.02 0.10.05 0.5 1 5 60

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–6

–4

–2

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C



0.3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


VBB1(V)

–10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



Electrical Characteristics

28


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1694

–120

–120

–6

–8

–3

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1694

–10max

–10max

–120min

50min∗–1.5max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–3A, IB=–0.3A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1694(Ta=25°C) (Ta=25°C)

VCC(V)

–40

RL(Ω)

10

IC(A)

–4

VBB2(V)

5

IB2(A)

0.4

ton(µs)

0.14typ

tstg(µs)

1.40typ

tf(µs)

0.21typ

IB1(A)

–0.4

VBB1(V)

–10






Pc–Ta Derating

00

–2

–4

–6

–8

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–350mA

–200mA

–150mA

–25mA

–100mA

–75mA

–50mA

IB=–10mA

0

–3

–2

–1

0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–8A

–4A

–2A

–0.02 –0.1 –0.5 –1 –8–530

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–10 –50–5 –100 –200–0.1

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

0.02 0.10.05 0.5 1 5 80

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–8

–6

–2

–4

0 –1.5–1.0–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –830

50

100

300

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C



15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



29


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1695

–140

–140

–6

–10

–4

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1695

–10max

–10max

–140min

50min∗–0.5max

20typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–140V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–5A, IB=–0.5A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1695(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–2

–4

–6

–8

–10

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–400mA

–25mA

IB=–10mA

–300mA

–200mA

–150mA

–100mA

–75mA

–50mA

0

–3

–2

–1

0 –2.0–0.5 –1.5–1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

0

–10

–8

–2

–6

–4

0 –1.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–0.02 –0.1 –1 –5–0.5 –1030

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–10–5–3 –100 –200–50–0.1

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms 3m

s1

0m

s

0.02 0.1 1 100

10

30

20

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –1030

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C


0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(A)

0.5

ton(µs)

0.17typ

tstg(µs)

1.86typ

tf(µs)

0.27typ

IB1(A)

–0.5

VBB1(V)

–10


30


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1725

–80

–80

–6

–6

–3

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1725

–10max

–10max

–80min

50min∗–0.5max

20typ

150typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–80V

VEB=–6V

IC=–25mA

VCE=–4V, IC=–2A

IC=–2A, IB=–0.2A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1725(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–2

–1

–4

–3

–5

–6

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–200mA

–150mA

–100mA

–80mA

–50mA

–30mA

–20mA

IB=–10mA

0

–3

–2

–1

0 –1.0–0.5 –1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–6A

–4A–2A

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–3 –5 –10 –100–50–0.05

–0.1

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms100ms

0.02 0.10.05 0.5 1 5 60

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.40.5

5

1

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W



30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–6

–4

–2

0 –1.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C


–0.5

VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(A)

0.3

ton(µs)

0.18typ

tstg(µs)

1.10typ

tf(µs)

0.21typ

IB1(A)

–0.3

VBB1(V)

–10

External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



31

(Ta=25°C)


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1726

–80

–80

–6

–6

–3

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1726

–10max

–10max

–80min

50min∗–0.5max

20typ

150typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–80V

VEB=–6V

IC=–25mA

VCE=–4V, IC=–2A

IC=–2A, IB=–0.2A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1726(Ta=25°C)






Pc–Ta Derating

00

–2

–4

–6

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–200mA

–150mA

–100mA

–80mA

–50mA

–30mA

–20mA

IB=–10mA

0

–3

–2

–1

0 –0.5 –1.0 –1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–6A

–4A–2A

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–10–3 –5 –100–50

–0.1

–0.05

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

100ms

0.02 0.10.05 0.5 1 5 60

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–6

–4

–2

0 –1.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C



0.4

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

–0.5

External Dimensions MT-25(TO220)

B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(A)

0.3

ton(µs)

0.18typ

tstg(µs)

1.10typ

tf(µs)

0.21typ

IB1(A)

–0.3

VBB1(V)

–10



32

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, Switch and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1746

–70

–50

–6

–12(Pulse–20)

–4

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SA1746

–10max

–10max

–50min

50min

–0.5max

–1.2max

25typ

400typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–70V

VEB=–6V

IC=–25mA

VCE=–1V, IC=–5A

IC=–5A, IB=–80mA


VCE=–12V, IE=1A

VCB=–10V, f=1MHz

LOW VCE (sat) 2SA1746(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

–4

–8

–12

–2

–6

–10

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–12mA–100mA

–50mA

–70mA

–30mA

IB=–10mA


0

–1.5

–1.0

–0.5

–3 –10 –1000–100

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1A

–3A–5A

IC=–10A

–10 –50–3 –100–0.3

–1

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs10ms

1ms

60

40

20

3.5

00 5025 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–12

–10

–2

–4

–6

–8

0 –1.5–0.5 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–1V)

125˚

C (C

aseT

emp)

25˚C

(C

aseT

emp)

–30˚

C (

Cas

eTem

p)

–0.03 –0.1 –1–0.5 –1050

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–1V)

Typ

–5 –0.03 –0.1 –1–0.5 –1050

100

500

–5

(VCE=–1V)


DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C

0.2

0.5

4

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


0.1 1 100

10

20

30

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


VCC(V)

–20

RL(Ω)

4

IC(A)

–5

VBB2(V)

5

IB2(mA)

80

ton(µs)

0.5typ

tstg(µs)

0.6typ

tf(µs)

0.3typ

IB1(mA)

–80

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


33

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application : Audio Output Driver and TV Velocity-modulation

2SA1859/1859A






Pc–Ta Derating

00

–1

–2

–2 –4 –6 –10–8


Co

lle

cto

r C

urr

en

t IC

(A)

–100

mA

IB=–5mA

–60mA

–30mA

–15mA

–10mA

0

–3

–2

–1

–2 –5 –10 –50 –100 –500 –1000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–0.5A –1A

IC=–2A

–0.01 –0.1 –0.5 –1 –250

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–10 –50–5 –100 –200–0.01

–0.1

–0.5

–1

–1

–5

–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural Cooling1.2SA18592.2SA1859A

DC

100ms

10ms

1m

s

1 2

0.01 0.10.05 0.5 1 20

20

60

40

80

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

7

1

5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–2

–1

0 –1–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

eTem

p)

25˚C

(C

aseT

emp)

–30˚

C (

Cas

eTem

p)

(VCE=–4V)

–0.01 –0.1 –0.5 –1 –250

100

300

DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

–6

–2

–1

20(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1859

–150

–150min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=–6V

IC=–10mA

VCE=–10V, IC=–0.7A

IC=–0.7A, IB=–70mA

VCE=–12V, IE=0.7A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)

2SA1859A

–180

–180

2SA1859

–150

–150

2SA1859A

–180

–180min

–10max

60 to 240

–1.0max

60typ

30typ


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



VCC(V)

–20

RL(Ω)

20

IC(A)

–1

VBB2(V)

5

IB2(mA)

100

ton(µs)

0.5typ

tstg(µs)

1.0typ

tf(µs)

0.5typ

IB1(mA)

–100

VBB1(V)

–10

–10max

34


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1860

–150

–150

–5

–14

–3

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1860

–100max

–100max

–150min

50min∗–2.0max

50typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A


VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(mA)

500

ton(µs)

0.25typ

tstg(µs)

0.85typ

tf(µs)

0.2typ

IB1(mA)

–500

LAPT 2SA1860(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–5

–10

–14

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

–100mA

IB=–20mA

–700

mA

–600mA

–500mA

–400mA

–300mA

–200mA

–150mA

0

–3

–2

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

–0.02 –0.1 –0.5 –5–1 –10 –1420

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–10 –50–5–2 –100 –200–0.05

–1

–0.5

–0.1

–10

–40

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0.02 0.1 1 100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ



0

–14

–10

–5

0 –2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(Cas

e Te

mp)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –1430

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



35


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1907

–80

–80

–6

–6

–3

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1907

–10max

–10max

–80min

50min∗–0.5max

20typ

150typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–80V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–2A

IC=–12A, IB=–0.2A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1907(Ta=25°C) (Ta=25°C)






00

–2

–1

–4

–3

–5

–6

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–200mA

–150mA

–100mA

–80mA

–50mA

–30mA

–20mA

IB=–10mA

0

–3

–2

–1

0 –0.5 –1.0 –1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–6A

–4A–2A

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

–5 –10 –50 –100–0.1

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0.02 0.10.05 0.5 1 5 60

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


0

–6

–4

–2

0 –1.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –630

50

100

300

DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C



0.3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Pc–Ta Derating

60

40

20

3.5

00 5025 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(A)

0.3

ton(µs)

0.18typ

tstg(µs)

1.10typ

tf(µs)

0.21typ

IB1(A)

–0.3

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



36


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1908

–120

–120

–6

–8

–3

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1908

–10max

–10max

–120min

50min∗–0.5max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–3A, IB=–0.3A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC(V)

–40

RL(Ω)

10

IC(A)

–4

VBB2(V)

5

IB2(A)

0.4

ton(µs)

0.14typ

tstg(µs)

1.40typ

tf(µs)

0.21typ

IB1(A)

–0.4

2SA1908(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–2

–4

–6

–8

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–350mA

–200mA

–150mA

–25mA

–100mA

–75mA

–50mA

IB=–10mA

0

–3

–2

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–8A

–4A

–2A0

–8

–6

–2

–4

0 –1.5–1.0–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–0.02 –0.1 –0.5 –1 –8–530

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

DC


100ms

10ms

–10–5 –50 –100 –150–0.1

–1

–0.5

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)

0 .02 0.10.05 0.5 1 5 80

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.2

0.5

4

1

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W



80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –830

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



37


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SA1909

–140

–140

–6

–10

–4

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SA1909

–10max

–10max

–140min

50min∗–0.5max

20typ

400typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–140V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–5A, IB=–0.5A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

2SA1909(Ta=25°C) (Ta=25°C)






Pc–Ta Derating

00

–2

–4

–6

–8

–10

–1 –2 –3 –4


Co

lle

cto

r C

urr

en

t IC

(A)

–400mA

–25mA

IB=–10mA

–300mA

–200mA

–150mA

–100mA

–75mA

–50mA

0

–3

–2

–1

0 –2.0–0.5 –1.5–1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

–5A

0

–10

–8

–2

–6

–4

0 –1.5–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–10 –50–3 –5 –100 –200–0.1

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

0.02 0.1 1 100

10

30

20

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –1020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE 125˚C

–30˚C

25˚C

–0.02 –0.1 –1 –5–0.5 –1030

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


VCC(V)

–60

RL(Ω)

12

IC(A)

–5

VBB2(V)

5

IB2(A)

0.5

ton(µs)

0.17typ

tstg(µs)

1.86typ

tf(µs)

0.27typ

IB1(A)

–0.5

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



38

Darlington 2SB1257

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1257

–60

–60

–6

–4(Pulse–6)

–1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1257

–10max

–10max

–60min

2000min

–1.5max

–2max

150typ

75typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–60V

VEB=－–6V

IC=–10mA

VCE=－4V, IC=–3A

IC=－3A, IB=–6mA

IC=－3A, IB=–6mA

VCE=－12V, IE=0.2A

VCB=－10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(mA)

10

ton(µs)

0.4typ

tstg(µs)

0.8typ

tf(µs)

0.6typ

IB1(mA)

–10

VBB1(V)

–10


Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose





Pc–Ta DeratingSafe Operating Area (Single Pulse)fT–IE Characteristics (Typical)

00

–2

–1

–4

–3

–6

–5

–2 –6–4–1 –5–3


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–

2.3m

A –1.8mA

–1.5mA

–1.2mA

–0.8mA

–1.0mA

–0.02 –0.1 –1–0.5 –6–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–2V)

100

500

20

50

1000

80005000

Typ

0.7

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .05 0.1 0.5 1 4

120

80

0

40

200

240

160

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10–5–3 –70–0.07

–1

–0.5

–0.1

–10

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

10ms

1ms


–0.6

–3

–2

–1

–0.2 –1–0.5 –10–5 –50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–2A

–3A

IC=–1A

0

–4

–2

–3

–1

0 –2.2–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–2V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–2V)

–0.02 –0.1–0.05 –0.5 –6–5–120

100

50

5000

500

1000

8000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

25

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2



B

C

E(2kΩ)(650Ω)

Equivalent circuit

39




Pc–Ta Derating

00

–2

–1

–4

–3

–6

–5

–2 –6–4–1 –5–3


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–3

.4m

A

–2.4mA–2.0mA

–1.8mA

–1.2mA

–0.9mA

Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)

–0.6

–3

–2

–1

–0.5 –1 –10 –200–100

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–4A

–6A

IC=–2A

–0.03 –0.1 –1–0.5 –6


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

80

8000

5000

1000

Typ

0.5

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .05 0.1 0.5 1 5 6

60

40

0

20

100

120

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10 –50–5–3 –100 –200–0.05

–1

–0.5

–0.1

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100µs

500µs

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

50x50x2

100x100x2

150x150x2


Without Heatsink

10ms

1ms


0

–6

–2

–3

–4

–5

–1

0 –2.2–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.03 –0.1 –0.5 –6–130

100

5000

500

1000

8000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C




Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1258

–100

–100

–6

–6(Pulse–10)

–1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1258

–10max

–10max

–100min

1000min

–1.5max

–2max

100typ

100typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–100V

VEB=–6V

IC=–10mA

VCE=–2V, IC=–3A

IC=–3A, IB=–6mA

IC=–3A, IB=–6mA

VCE=–12V, IE=0.2A

VCB=–10V, f=1MHz

Darlington 2SB1258(Ta=25°C) (Ta=25°C)


VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(mA)

6

ton(µs)

0.6typ

tstg(µs)

1.6typ

tf(µs)

0.5typ

IB1(mA)

–6

VBB1(V)

–10

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



B

C

E(3kΩ)(100Ω)

Equivalent circuit

40

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1259

–120

–120

–6

–10(Pulse–15)

–1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1259

–10max

–10max

–120min

2000min

–1.5max

–2.0max

100typ

145typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–10mA

VCE=–4V, IC=–5A



VCE=–12V, IE=0.2A

VCB=–10V, f=1MHz

Darlington 2SB1259(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)






Pc–Ta Derating

00

–5

–10

–15

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–50mA

–10mA

–5mA

–3mA

–2mA

IB=–1mA

–20mA


0

–3

–2

–1

–0.2 –1 –1000–10 –100

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1A

–5A

IC=–10A

–0.03 –0.1 –0.5 –1 –10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

50

100

500

10000

5000

1000

20000

Typ

0.3

0.5

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

–10 –50–5–3 –100 –200–0.03

–0.05

–1

–0.5

–0.1

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100µs10ms

1ms


30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

50x50x2

100x100x2

150x150x2


Without Heatsink

0

–10

–4

–6

–8

–2

0 –2.2–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=–4V)

–0.02 –0.1 –0.5 –10–5–120

100

50

5000

500

1000

20000

10000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.05 0.1 0.5 1 5 10

100

0

200

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


TypNatural CoolingSilicone Grease



VCC(V)

–30

RL(Ω)

10

IC(A)

–3

VBB2(V)

5

IB2(mA)

6

ton(µs)

0.6typ

tstg(µs)

1.6typ

tf(µs)

0.5typ

IB1(mA)

–6

VBB1(V)

–10

B

C

E(3kΩ)(100Ω)

Equivalent circuit

41




Pc–Ta Derating

00

–5

–10

–20

–15

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–10mA –6mA

–3mA

–4mA

–2mA

IB=–1mA


0

–3

–2

–1

–0.1 –1 –100–10

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1A–5A

IC=–10A

–0.3 –1 –20–10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

800

10000

5000

1000

–10 –50

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

50x50x2

100x100x2

150x150x2


Without Heatsink

–5–2 –100–0.05

–1

–0.5

–0.1

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

10ms

1ms

20000

Typ


0

–20

–10

–15

–5

0 –2.4–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.3 –0.5 –1 –5 –20–10500

5000

1000

20000

10000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.3

0.5

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .05 0.1 5 100.5 1 20

120

80

0

40

200

240

160

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ



Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1351

–60

–60

–6

–12(Pulse–20)

–1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1351

–10max

–10max

–60min

2000min

–1.5max

–2.0max

130typ

170typ

Unit

µA

mA

V

V

V

MHz

pF

Condition

VCB=–60V

VEB=–6V

IC=–10mA

VCE=–4V, IC=–10A



VCE=–12V, IE=1A

VCB=–10V, f=1MHz



VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(mA)

20

ton(µs)

0.7typ

tstg(µs)

1.5typ

tf(µs)

0.6typ

IB1(mA)

–20

VBB1(V)

–10

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



B

C

E(2kΩ)(100Ω)

Equivalent circuit

42

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab




Pc–Ta Derating

00

–5

–10

–20

–15

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–10m

A –6mA

–3mA

–4mA

–2mA

–1mA


0

–3

–2

–1

–0.1 –1 –100–10

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–1A–5A

IC=–10A

–0.3 –1 –20–10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

800

10000

5000

1000

20000

Typ

–10 –50–5–2 –100–0.05

–1

–0.5

–0.1

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC 10ms

1ms


60

40

20

3.5

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–20

–10

–15

–5

0 –2.4–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=–4V)

–0.3 –0.5 –1 –5 –20–10500

5000

1000

20000

10000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.05 0.1 5 100.5 1 20

120

80

0

40

200

240

160

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0.3

0.5

5

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1352

–60

–60

–6

–12(Pulse–20)

–1

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1352

–10max

–10max

–60min

2000min

–1.5max

–2.0max

130typ

170typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–60V

VEB=–6V

IC=–10mA




VCE=–12V, IE=1A

VCB=–10V, f=1MHz

Darlington 2SB1352(Ta=25°C) (Ta=25°C) External Dimensions FM100(TO3PF)

Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose



VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(mA)

20

ton(µs)

0.7typ

tstg(µs)

1.5typ

tf(µs)

0.6typ

IB1(mA)

–20

VBB1(V)

–10

B

C

E(2kΩ)(100Ω)

Equivalent circuit

43


hFE–IC Characteristics (Typical) θ j -a–t Characteristics


Pc–Ta Derating

00

–10

–20

–26

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–40mA

–12mA

–6mA

–3mA

IB=–1.5mA

–20mA


–10 –50–5–3 –100 –200–0.03

–0.05

–1

–0.5

–0.1

–10

–50

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100µs10ms

1ms


0

–16

–8

–12

–4

0 –2.4–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–0.3 –0.5 –1 –16–10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

10000

5000

1000

20000

Typ

–0.3 –0.5 –1 –16–10–5500

10000

5000

1000

20000

hFE–IC Temperature Characteristics (Typical)(VCE=–4V)


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.05 0.1 5 100.5 1 16

50

0

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

0

–3

–2

–1

–0.5 –1 –100–10

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–4A

–8A

IC=–16A

0.2

0.5

3

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1382

–120

–120

–6

–16(Pulse–26)

–1

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1382

–10max

–10max

–120min

2000min

–1.5max

–2.5max

50typ

350typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–10mA

VCE=–4V, IC=–8A



VCE=–12V, IE=1A

VCB=–10V, f=1MHz



VCC(V)

–40

RL(Ω)

5

IC(A)

–8

VBB2(V)

5

IB2(mA)

16

ton(µs)

0.8typ

tstg(µs)

1.8typ

tf(µs)

1.0typ

IB1(mA)

–16

VBB1(V)

–10

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



B

C

E(2kΩ) (80Ω)

Equivalent circuit

44

Darlington 2SB138315.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b




Pc–Ta Derating

00

–15

–10

–5

–20

–25

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–8.0mA

IB=–0.6mA

–1.0mA

–1.5mA

–2.5mA

–4.0mA

–6.0mA


0

–3

–2

–1

–0.5 –1 –500–100–10

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–6A

–12A

IC=–25A

–0.2 –0.5 –1 –40–10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

200

500

10000

5000

1000

20000

Typ

0.1

0.5

2

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .1 10.5 5 10

40

30

0

10

20

60

50

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10 –50–5–3 –100 –200–0.2

–1

–0.5

–50

–10

–100

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

10ms

1ms


120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–25

–10

–15

–20

–5

0 –2.6–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(Cas

e Te

mp)

(VCE=–4V)

–0.2 –1–0.5 –5 –40–10200

5000

500

1000

20000

10000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1383

–120

–120

–6

–25(Pulse–40)

–2

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1383

–10max

–10max

–120min

2000min

–1.8max

–2.5max

50typ

230typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–25mA




VCE=–12V, IE=1A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C) External Dimensions MT-100(TO3P)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose



VCC(V)

–24

RL(Ω)

2

IC(A)

–12

VBB2(V)

5

IB2(mA)

24

ton(µs)

1.0typ

tstg(µs)

3.0typ

tf(µs)

1.0typ

IB1(mA)

–24

VBB1(V)

–10

B

C

E(2kΩ) (80Ω)

Equivalent circuit

45





0

–3

–2

–1

–0.5 –1 –100–10

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–4A

–8A

IC=–16A

–0.3 –1 –16–10–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

10000

5000

1000

20000

Typ

0.2

0.5

3

1

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

–10 –50–5–3 –100 –200–0.03

–0.05

–1

–0.5

–0.1

–10

–50

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100µs10ms

1ms


80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

00

–10

–20

–26

–2–1 –6–5–4–3


Co

lle

cto

r C

urr

en

t IC

(A)

–40mA

–12mA

–6mA

–3mA

IB=–1.5mA

–20mA

0

–16

–8

–12

–4

0 –2.4–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–0.3 –0.5 –1 –16–10–5500

10000

5000

1000

20000(VCE=–4V)


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.05 0.1 5 100.5 1 16

50

0

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1420

–120

–120

–6

–16(Pulse–26)

–1

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1420

–10max

–10max

–120min

2000min

–1.5max

–2.5max

50typ

350typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–10mA

VCE=–4V, IC=–8A



VCE=–12V, IE=1A

VCB=–10V, f=1MHz


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b




VCC(V)

–24

RL(Ω)

2

IC(A)

–12

VBB2(V)

5

IB2(mA)

24

ton(µs)

1.0typ

tstg(µs)

3.0typ

tf(µs)

1.0typ

IB1(mA)

–24

VBB1(V)

–10

B

C

E(2kΩ) (80Ω)

Equivalent circuit

46


B

E

C

(70Ω )




Pc–Ta Derating

00

–2

–4

–6

–8

–2 –4 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–1

0m

A–2.5

mA

–2.0mA –1.8mA

–1.5mA

–1.3mA

–1.0mA

–0.8mA

–0.5mA

IB=–0.3mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–6A

–8A

IC=–4A

0

–8

–6

–2

–4

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –1–0.5 –8–52,000

5,000

10,000

40,000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1 –5–0.5 –8


1000

5000

10000

50000

DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.2

0.5

4

1

1 10 505 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 80

40

60

20

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10 –50–5–2 –100 –200–0.05

–1

–0.5

–0.1

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink




Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1559

–160

–150

–5

–8

–1

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1559

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

65typ

160typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–6A

IC=–6A, IB=–6mA

IC=–6A, IB=–6mA

VCE=–12V, IE=1A

VCB=–10V, f=1MHz

Darlington 2SB1559(Ta=25°C) (Ta=25°C) External Dimensions MT-100(TO3P)

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


VCC(V)

–60

RL(Ω)

10

IC(A)

–6

VBB2(V)

5

IB2(mA)

6

ton(µs)

0.7typ

tstg(µs)

3.6typ

tf(µs)

0.9typ

IB1(mA)

–6

VBB1(V)

–10


Equivalent circuit

47


Darlington 2SB1560




Pc–Ta Derating

00

–2

–4

–6

–10

–8

–2 –4 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–1

0m

A –2.5mA

–2.0mA

–1.5mA

–1.0mA

–1.2mA

–0.8mA

–0.6mA

IB=–0.4mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–7A

–10A

IC=–5A

0

–10

–8

–6

–2

–4

0 –2.5–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

1 ,000

10,000

40,000

5,000

–0.2 –0.5 –1 –5 –10


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10500

1000

5000

10000

50000


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.1

1

3

0.5

1 5 10 50 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 100

40

60

20

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

10ms

–10 –50–5–3 –100 –200–0.05

–0.1

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms


100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink





Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1560

–160

–150

–5

–10

–1

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fr

COB

2SB1560

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

50typ

230typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–7A

IC=–7A, IB=–7mA

IC=–7A, IB=–7mA

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–70

RL(Ω)

10

IC(A)

–7

VBB2(V)

5

IB2(mA)

7

ton(µs)

0.8typ

tstg(µs)

3.0typ

tf(µs)

1.2typ

IB1(mA)

–7

VBB1(V)

–10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


B

E

C

(70Ω )

Equivalent circuit

48





Pc–Ta Derating

00

–2

–4

–6

–12

–10

–8

–2 –4 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–10mA

–2.0mA

–2.0mA

–1.5mA

–1.0mA

–1.2mA

–0.8mA

–0.6mA

IB=–0.4mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–7A

–10A

IC=–5A

0

–12

–10

–8

–6

–2

–4

0 –2.5–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

1 ,000

10,000

40,000

5,000

–0.2 –0.5 –1 –5 –10–12


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –12–10800

1000

5000

10000

50000


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

1 5 10 50 100 500 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 100

40

60

20

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


10ms

–10 –50–5–3 –100 –200–0.05

–0.1

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100ms

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink





Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1570

–160

–150

–5

–12

–1

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1570

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

50typ

230typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–7A

IC=–7A, IB=–7mA

IC=–7A, IB=–7mA

VCE=–12V, IE=2A

VCB=–10V, f=1MHz



VCC(V)

–70

RL(Ω)

10

IC(A)

–7

VBB2(V)

5

IB2(mA)

7

ton(µs)

0.8typ

tstg(µs)

3.0typ

tf(µs)

1.2typ

IB1(mA)

–7

VBB1(V)

–10


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


B

E

C

(70Ω )

Equivalent circuit

49


Darlington 2SB1587




Pc–Ta Derating

00

–2

–4

–6

–8

–2 –4 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–1

0m

A–2.5

mA

–2.0mA –1.8mA

–1.5mA

–1.3mA

–1.0mA

–0.8mA

–0.5mA

IB=–0.3mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–6A

–8A

IC=–4A

0

–8

–6

–2

–4

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –1–0.5 –8–52,000

5,000

10,000

40,000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1 –5–0.5 –8


1000

5000

10000

50000

DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.2

0.5

4

1

1 5 10 50 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 80

40

60

20

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10 –50–5–2 –100 –200–0.05

–1

–0.5

–0.1

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms




80

60

40

20

3.50

0 5025 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1587

–160

–150

–5

–8

–1

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1587

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

65typ

160typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–6A

IC=–6A, IB=–6mA

IC=–6A, IB=–6mA

VCE=–12V, IE=1A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C) External Dimensions FM100(TO3PF)

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


VCC(V)

–60

RL(Ω)

10

IC(A)

–6

VBB2(V)

5

IB2(mA)

6

ton(µs)

0.7typ

tstg(µs)

3.6typ

tf(µs)

0.9typ

IB1(mA)

–6

VBB1(V)

–10


B

E

C

(70Ω )

Equivalent circuit

50





Pc–Ta Derating

00

–2

–4

–6

–10

–8

–2 –4 –6


Co

lle

cto

r C

urr

en

t IC

(A)

–1

0m

A –2.5mA

–2.0mA

–1.5mA

–1.0mA

–1.2mA

–0.8mA

–0.6mA

IB=–0.4mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–7A

–10A

IC=–5A

0

–10

–8

–6

–2

–4

0 –2.5–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

1 ,000

10,000

40,000

5,000

–0.2 –0.5 –1 –5 –10


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10500

1,000

5,000

10,000

50,000


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

0.1

1

3

0.5

1 5 10 50 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 100

40

60

20

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

10ms

–10 –50–5–3 –100 –200–0.05

–0.1

–1

–0.5

–10

–30

–5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms


80

60

40

20

3.50

0 5025 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink





Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1588

–160

–150

–5

–10

–1

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1588

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

50typ

230typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–160V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–7A

IC=–7A, IB=–7mA

IC=–7A, IB=–7mA

VCE=–12V, IE=2A

VCB=–10V, f=1MHz



VCC(V)

–70

RL(Ω)

10

IC(A)

–7

VBB2(V)

5

IB2(mA)

7

ton(µs)

0.8typ

tstg(µs)

3.0typ

tf(µs)

1.2typ

IB1(mA)

–7

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


B

E

C

(70Ω )

Equivalent circuit

51





Pc–Ta Derating

00

–2

–4

–6

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–0.1mA

–5

mA

–1mA

–0.5mA

–0.4mA–0.3mA

–0.2mA

0

–3

–2

–1

–0.1 –1–0.5 –10–5 –100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–5A

IC=–3A

0

–6

–4

–2

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –0.1 –1–0.5 –6–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

200

10,000

40,000

1,000

5,000

Typ

(VCE=–4V)

–0.02 –0.1 –0.5 –6–5–1100

5,000

10,000

500

1,000

50,000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.5

5

1

1 5 10 50 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 6

60

40

0

20

100

120

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


Co

lle

cto

r C

urr

en

t IC

(A)

–5 –10 –50 –100 –200

–0.1

–0.05

–1

–0.5

–10

–20

–5 10ms

DC

100ms


60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink





Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1624

–110

–110

–5

–6

–1

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1624

–100max

–100max

–110min

5000min∗–2.5max

–3.0max

100typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–110V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–5A

IC=–5A, IB=–5mA

IC=–5A, IB=–5mA

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz



VCC(V)

–30

RL(Ω)

6

IC(A)

–5

VBB2(V)

5

IB2(mA)

5

ton(µs)

1.1typ

tstg(µs)

3.2typ

tf(µs)

1.1typ

IB1(mA)

–5

VBB1(V)

–10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


B

E

C

(70Ω )

Equivalent circuit

52

Darlington 2SB1625





Pc–Ta Derating

00

–2

–4

–6

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–0.1mA

–5

mA

–1m

A

–0.5mA

–0.4mA–0.3mA

–0.2mA

0

–3

–2

–1

–0.1 –1–0.5 –10–5 –100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–5A

IC=–3A

0

–6

–4

–1

–2

–3

–5

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –0.05 –0.1 –1–0.5 –6–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

200

10,000

40,000

1,000

5,000

Typ

(VCE=–4V)

–0.02 –0.1–0.05 –0.5 –6–5–1100

5000

10000

500

1000

50000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.5

5

1

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 6

60

40

0

20

100

120

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ


Co

lle

cto

r C

urr

en

t IC

(A)

–5 –10 –50 –100 –150

–0.1

–0.05

–1

–0.5

–10

–20

–5 10ms

DC

100ms


60

40

20

3.5

00 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink




Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1625

–110

–110

–5

–6

–1

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1625

–100max

–100max

–110min

5000min∗–2.5max

–3.0max

–100typ

–110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–110V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–5A

IC=–5A, IB=–5mA

IC=–5A, IB=–5mA

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–30

RL(Ω)

6

IC(A)

–5

VBB2(V)

5

IB2(mA)

5

ton(µs)

1.1typ

tstg(µs)

3.2typ

tf(µs)

1.1typ

IB1(mA)

–5

VBB1(V)

–10

B

E

C

(70Ω )

Equivalent circuit

External Dimensions FM100(TO3P)

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)

53





Pc–Ta Derating

00

–2

–4

–6

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–0.1mA

–5

mA

–1m

A

–0.5mA

–0.4mA–0.3mA

–0.2mA

0

–3

–2

–1

–0.1 –1–0.5 –10–5 –100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

–5A

IC=–3A

0

–6

–4

–2

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –0.05 –0.1 –1–0.5 –6–5


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

500

200

10,000

40,000

1,000

5,000

Typ

(VCE=–4V)

–0.02 –0.1–0.05 –0.5 –6–5–1100

5000

10000

500

1000

50000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.3

0.5

5.0

1.0

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 6

60

40

0

20

100

120

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


Typ

–10 –50–5–3 –100 –200–0.05

–1

–0.5

–0.1

–10

–20

–5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100ms

10ms


30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink





Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1626

–110

–110

–5

–6

–1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1626

–100max

–100max

–110min

5000min∗–2.5max

–3.0max

100typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–110V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–5A

IC=–5A, IB=–5mA

IC=–5A, IB=–5mA

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

Darlington 2SB1626(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

–30

RL(Ω)

6

IC(A)

–5

VBB2(V)

5

IB2(mA)

5

ton(µs)

1.1typ

tstg(µs)

3.2typ

tf(µs)

1.1typ

IB1(mA)

–5

VBB1(V)

–10


B

E

C

(70Ω )

Equivalent circuit

54


Darlington 2SB1647




Pc–Ta Derating

–10mA–50mA

–3mA

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

IC=–15A

IC=–5A

0

–15

–10

–5

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

–0.2 –0.5 –1 –5 –10 –15


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

1,000

10,000

50,000

5,000

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10 –151000

5000

10000

50000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

Time t(ms)

0.1

1

3

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 100

40

20

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)





00

–5

–10

–15

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

–1.5mA

–1.0mA

–0.8mA

IB=–0.3mA

–0.5mA

–2mA

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1647

–150

–150

–5

–15

–1

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1647

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

45typ

320typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–30mA




VCE=–12V, IE=2A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C) External Dimensions MT-100(TO3P)

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


VCC(V)

–40

RL(Ω)

4

IC(A)

10

VBB2(V)

5

IB2(mA)

10

ton(µs)

0.7typ

tstg(µs)

1.6typ

tf(µs)

1.1typ

IB1(mA)

–10

VBB1(V)

–10


B

E

C

(70Ω )

Equivalent circuit

55


Darlington 2SB1648




Pc–Ta Derating

–10m

A

0

17

15

10

5

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)

25˚C

(Cas

e Te

mp)

–30˚

C (C

ase

Tem

p)

–0.2 –0.5 –1 –5 –10 –17


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

1,000

10,000

50,000

5,000

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10 –171000

5000

10000

50000


DC

Cu

rre

nt

Ga

in h

FE

T ime t(ms)

0.1

1

2

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)




00

–5

–10

–17

–15

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

–1.5mA

–2mA–3mA

–5

0m

A

–1.0mA

–0.8mA

IB=–0.3mA

–0.5mA

25˚C

–30˚C

125˚C

200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

IC=–15A

IC=–5A

0.02 0.10.05 0.5 1 5 100

40

20

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)



Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1648

–150

–150

–5

–17

–1

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1648

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

45typ

320typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–30mA




VCE=–12V, IE=2A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(mA)

10

ton(µs)

0.7typ

tstg(µs)

1.6typ

tf(µs)

1.1typ

IB1(mA)

–10

VBB1(V)

–10


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


B

E

C

(70Ω )

Equivalent circuit

56


Darlington 2SB1649







0

–3

–2

–1

–0.2 –1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=–10A

IC=–15A

IC=–5A

0

–15

–10

–5

0 –3–2–1


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (C

aseT

em

p)–3

0˚C

(C

aseT

em

p)

–0.2 –0.5 –1 –5 –10 –15


DC

Cu

rre

nt

Ga

in h

FE

(VCE=–4V)

1,000

10,000

50,000

5,000

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10 –151000

5000

10000

50000


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

Time t(ms)

0.1

1

3

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0 .02 0.10.05 0.5 1 5 100

40

20

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=–12V)


100

80

60

40

20

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150

–10mA–50mA

–3mA

00

–5

–10

–15

–2 –6–4


Co

lle

cto

r C

urr

en

t IC

(A)

–1.5mA

–1.0mA

–0.8mA

IB=–0.3mA

–0.5mA

–2mA


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1649

–150

–150

–5

–15

–1

85(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1649

–100max

–100max

–150min

5000min∗–2.5max

–3.0max

45typ

320typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–30mA




VCE=–12V, IE=2A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–40

RL(Ω)

4

IC(A)

–10

VBB2(V)

5

IB2(mA)

10

ton(µs)

0.7typ

tstg(µs)

1.6typ

tf(µs)

1.1typ

IB1(mA)

–10

VBB1(V)

–10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


B

E

C

(70Ω )

Equivalent circuit

57


Darlington 2SB1659Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SB1659

–110

–110

–5

–6

–1

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SB1659

–100max

–100max

–110min

5000min∗–2.5max

–3.0max

100typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=–110V

VEB=–5V

IC=–30mA

VCE=–4V, IC=–5A

IC=–5A, IB=–5mA

IC=–5A, IB=–5mA

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

–30

RL(Ω)

6

IC(A)

–5

VBB2(V)

5

IB2(mA)

5

ton(µs)

1.1typ

tstg(µs)

3.2typ

tf(µs)

1.1typ

IB1(mA)

–5

VBB1(V)

–10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


B

E

C

(70Ω )

Equivalent circuit

Co

lle

cto

r C

urr

en

t IC

(A)


00

–2

–4

–6

–2 –6–4

IB=–0.1mA

–5

mA

–1m

A

–0.5mA

–0.4mA–0.3mA

–0.2mA

0

–3

–2

–1

–0.1 –1–0.5 –10–5 –100–50

–5A

IC=–3A

0

–6

–4

–2

0 –3–2–1

コレクタ電流　IC(A)

(VCE=–4V)

–0.02 –0.05 –0.1 –1–0.5 –6–5

(VCE=–4V)

500

200

10000

40000

1000

5000

Typ

(VCE=–4V)

–0.02 –0.1–0.05 –0.5 –6–5–1100

5000

10000

500

1000

50000

25˚C

–30˚C

125˚C

0.02 0.10.05 0.5 1 5 6

60

40

0

20

100

120

80

(VCE=–12V)

Typ

50

40

30

20

10

20

0 25 50 75 100 125 150

0.4

1

5

0.5

1 10 100 1000 2000






125˚

C (C

ase

Tem

p)25

˚C (C

aseT

em

p)–3

0˚C

(C

aseT

em

p)

Col lector Current IC(A) Col lector Current IC(A) Time t(ms)

DC

Cu

rre

nt

Ga

in h

FE

DC

Cu

rre

nt

Ga

in h

FE

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

Emit ter Current IE(A) Ambient Temperature Ta(˚C)

Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

Base Current IB(mA) Base-Emit tor Vol tage VBE(V)Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

Co

lle

cto

r C

urr

en

t IC

(A)

58




Pc–Ta Derating

00

1

2

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=200mA

IB=20mA/stop


0

3

2

1

0 0.1 0.2 0.3

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A2A

3 10 1000 200010010

50

100

200

Col lector Current IC(mA)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.2

0.5

1

5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 1002 5000.02

0.1

1

0.5

0.05

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

20

ms

5m

s1

ms

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

50x50x2

100x100x2

150x150x2


Without Heatsink

0

2

1

0 1.00.80.60.40.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)(VCE=4V)

3 5 10 50 100 500 1000 200010

50

200

100


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

–0.003 –0.01 –0.05 –0.1 –0.5 –1

10

0

20

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC2023

300

300

6

2

0.2

40(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC2023

1.0max

1.0max

300min

30min

1.0max

10typ

75typ

Unit

mA

mA

V

V

MHz

pF

Conditions

VCB=300V

VEB=6V

IC=25mA

VCE=4V, IC=0.5A

IC=1.0A, IB=0.2A

VCE=12A, IE=–0.2A

VCB=10V, f=1MHz

2SC2023(Ta=25°C) (Ta=25°C) External Dimensions MT-25(TO220)

B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


VCC(V)

100

RL(Ω)

100

IC(A)

1.0

VB2(V)

–5

IB2(mA)

–200

ton(µs)

0.3typ

tstg(µs)

4.0typ

tf(µs)

1.0typ

IB1(mA)

100


59

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC2837

150

150

5

10

2

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC2837

100max

100max

150min

50min∗2.0max

70typ

60typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=25mA

VCE=4V, IC=3V

IC=5A, IB=0.5A

VCE=12V, IE=–1A

VCB=80V, f=1MHz

VCC(V)

60

RL(Ω)

12

IC(A)

5

VB2(V)

–5

IB2(mA)

–500

ton(µs)

0.2typ

tstg(µs)

1.4typ

tf(µs)

0.35typ

IB1(mA)

500

LAPT 2SC2837(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

10

2

6

4

8

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

0 .2

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

2 10 100 2000.2

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

10ms

DC


0.02 0.1 1 1020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

10

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA

200mA

160mA

120mA

80mA

40mA

IB=20mA

400mA

(VCE=4V)

0.02 0.1 0.50.05 1051


DC

Cu

rre

nt

Ga

in h

FE

20

50

100

200

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –6

40

20

0

120

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


∗ hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

60

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC2921

160

160

5

15

4

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



External Dimensions MT-200Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC2921

100max

100max

160min

50min∗2.0max

60typ

200typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=0.5A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

VCC(V)

60

RL(Ω)

12

IC(A)

5

VB2(V)

–5

IB2(mA)

–500

ton(µs)

0.2typ

tstg(µs)

1.5typ

tf(µs)

0.35typ

IB1(mA)

500

LAPT 2SC2921(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

15

10

5

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

2 10 100 2000.3

1

0.5

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

10ms


0.02 0.1 10.5 10 1510

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

15

10

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA500mA

600mA

300mA

200mA

150mA

100mA

50mA

IB=20mA

750m

A

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 15


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



61


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC2922

180

180

5

17

5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C



Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC2922

100max

100max

180min

30min∗2.0max

50typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=180V

VEB=5V

IC=25mA

VCE=4V, IC=8V

IC=8A, IB=0.8A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

VCC(V)

40

RL(Ω)

4

IC(A)

10

VB2(V)

–5

IB2(A)

–1

ton(µs)

0.2typ

tstg(µs)

1.3typ

tf(µs)

0.45typ

IB1(A)

1

LAPT 2SC2922(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

17

15

10

5

0 2 2.41


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

2 10 100 3000.2

1

0.5

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

0.02 0.1 1 1050.5 1710

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

17

15

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA700mA1A

500mA

400mA

300mA

200mA

100mA

50mA

IB=20mA

1.5

A

(VCE=4V)

0.02 0.5 1 5 100.1 17


DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C

10

50

100

200

–0.02 –0.1 –1 –5 –100

40

60

20

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C



∗ hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

62

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3179

80

60

6

4

1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3179

100max

100max

60min

40min

0.6max

15typ

60typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=80V

VEB=6V

IC=25mA

VCE=4V, IC=1V

IC=2A, IB=0.2A

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

2SC3179(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

1

2

3

4

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=100m

A

40mA

60mA80mA

30mA

10mA

20mA


0

1.0

0.5

0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

2A

3A

0

4

2

1

3

0.4 1.20.80.6 1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–30˚

C (C

ase

Tem

p)

25˚C

(Cas

e Te

mp)

0 .01 0.1 0.5 1 420

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

(VCE=4V)

0.02 0.1 0.5 41


DC

Cu

rre

nt

Ga

in h

FE

20

50

100

200

125˚C

25˚C

–30˚C

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 1000.2

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

–0.005 –0.01 –0.1 –0.5 –1 –4

20

10

0

30

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b



VCC(V)

20

RL(Ω)

10

IC(A)

2

VBB2(V)

–5

IB2(mA)

–200

ton(µs)

0.2typ

tstg(µs)

1.9typ

tf(µs)

0.29typ

IB1(mA)

200

VBB1(V)

10



63


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3263

230

230

5

15

4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3263

100max

100max

230min

50min∗2.0max

60typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=230V

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=0.5A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

LAPT 2SC3263(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

15

10

5

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)–3

0˚C

(Cas

e Te

mp)

25˚C

(Cas

e Te

mp)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 1503 10 100 3000.1

1

0.5

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)

10ms

DC


0.02 0.1 10.5 105 1510

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

15

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .0A1.5A

2.0A

3.0A

600mA

400mA

200mA

100mA

50mA

IB=20mA

(VCE=4V)


0.02 0.5 1 5 100.1 15

DC

Cu

rre

nt

Ga

in h

FE

10

50

100

200

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

60

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(mA)

–500

ton(µs)

0.30typ

tstg(µs)

2.40typ

tf(µs)

0.50typ

IB1(mA)

500

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


∗ hFE Rank O(50 to 100), Y(70 to 140)

64


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3264

230

230

5

17

5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3264

100max

100max

230min

50min∗2.0max

60typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=230V

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=0.5A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

LAPT 2SC3264(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

15

17

10

5

0 31 2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

25˚C

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

3 10 100 3000.1

1

0.5

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)

10ms

DC


0.02 0.1 10.5 105 1710

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

10

17

15

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .0A1.5A

3.0A

600mA

400mA

200mA

100mA

50mA

IB=20mA

(VCE=4V)

0.02 0.5 51

10

50

200

100

0.1 10 17


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

60

100

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

2.0A


VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.30typ

tstg(µs)

2.40typ

tf(µs)

0.50typ

IB1(A)

0.5

VBB1(V)

10

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C



∗ hFE Rank O(50 to 100), Y(70 to 140)

65


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3284

150

150

5

14

3

125(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3284

100max

100max

150min

50min∗2.0max

60typ

200typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=0.5A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

LAPT 2SC3284(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

14

10

5

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

3 10 100 2000.2

1

0.5

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)

10ms100m

s

1ms

DC


00

4

14

12

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA500mA600mA

300mA

200mA

150mA

100mA

50mA

IB=20mA

750m

A

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 14


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

0.02 0.1 0.5 1 5 141020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ


VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.2typ

tstg(µs)

1.5typ

tf(µs)

0.35typ

IB1(A)

0.5

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



66

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application : Audio and General Purpose

LAPT 2SC3519/3519A





0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

0

15

10

5

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150


Co

lle

cto

r C

urr

en

t IC

(A)

5 10 50 100 200

0.1

0.05

1

0.5

10

40

5

10ms


1.2SC35192.2SC3519A

1 2

DC

0.02 0.1 1 100.5 5 1510

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

15

10

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA500mA

600mA

300mA

200mA

100mA

50mA

IB=20mA

700mA

(VCE=4V)


0.02 0.5 1 5 100.1 15

DC

Cu

rre

nt

Ga

in h

FE

10

50

100

300

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –5 –100

40

60

20

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(A)

–1

ton(µs)

0.2typ

tstg(µs)

1.3typ

tf(µs)

0.45typ

IB1(A)

1

VBB1(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

5

15

4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Unit

µA

V

µA

V

V

MHz

pF

(Ta=25°C) (Ta=25°C)

2SC3519A

180

180

2SC3519

160

160

100max

50min∗2.0max

50typ

250typ


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



100max

2SC3519A

180

180min

Conditions

VCB=

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=0.5A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3519

160

160min

67

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose

2SC3678Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3678

900

800

7

3(Pulse6)

1.5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3678

100max

100max

800min

10to30

0.5max

1.2max

6typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=0.2A

IC=1A, IB=0.2A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

250

RL(Ω)

250

IC(A)

1

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.15

VBB1(V)

10


hFE–IC Characteristics (Typical) ton•tstg•t f–IC Characteristics (Typical) θ j -a–t Characteristics

IC–VBE Temperature Characteristics (Typical)VCE(sat) ,VBE(sat)–IC Temperature Characteristics (Typical)

Pc–Ta DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)

00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA

200mA

100mA

IB=50mA

500mA 400mA

0.02 0.10.05 10.5 30

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)

–55˚C (Case Temp)

25˚C

125˚CVCE(sat)–55˚C

(Cas

eT

emp)

0 .01 0.10.05 1 30.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.1 10.5 30.2

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2

　 =2:0.3:1Const.

0.3

1

3

0.5

1 10 100 10005 50 500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mHIB2=–1.0ADuty:less than 1%

100 500 100050

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


68


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3679

900

800

7

5(Pulse10)

2.5

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3679

100max

100max

800min

10to30

0.5max

1.2max

6typ

75typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3679(Ta=25°C) (Ta=25°C)





00

2

1

3

4

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

500mA

400mA

300mA

200mA

700mA 600mA

IB=100mA

0.03 0.10.05 1 5 100.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)25˚C (Case Temp)–55˚C (Case Temp)

25

˚C－

55

˚C

VCE(sat) 125˚C (Case Temp

)

0 .1 10.5 50.2

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　250VIC: IB1:–IB2

　 =2:0.3:1Const.

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

0.05

0.01

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural Cooling L=3mHIB2=–1.0ADuty:less than1%

10 505 100 500 1000

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs10ms

1ms100ms

10µs

DC

(Tc=25 C

)0

5

1

2

3

4

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C


VCC(V)

250

RL(Ω)

125

IC(A)

2

VBB2(V)

–5

IB2(A)

–1

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.3

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


69


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3680

900

800

7

7(Pulse14)

3.5

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3680

100max

100max

800min

10to30

0.5max

1.2max

6typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–2A

VCB=10V, f=1MHz

2SC3680(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

4

2

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

700mA

500mA

300mA

200mA

IB=100mA

1A

0.02 0.10.05 1 50.5 70

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)

–55˚C (Case Temp)25˚C

－55˚CVCE(sat)125˚C

(Cas

eT

emp)

0 .1 10.5 750.2

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　250VIC: IB1: IB2=2:0.3:–1Const.

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100 50050 1000

1

0.5

0.01

0.1

0.05

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 5052 100 500 1000

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs10ms

1ms

0

7

2

4

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 750.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C25˚C

–55˚C

120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


VCC(V)

250

RL(Ω)

83

IC(A)

3

VBB2(V)

–5

IB2(A)

–1.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.45

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


70

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3830

600

500

10

6(Pulse12)

2

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3830

1max

100max

500min

10to30

0.5max

1.3max

8typ

45typ

Unit

mA

µA

V

V

V

MHz

pF

Conditions

VCB=600V

VEB=10V

IC=25mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3830(Ta=25°C) (Ta=25°C)





00

2

1

3

4

5

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

800mA

600mA

400mA

300mA

200mA

1A

IB=100mA

0.02 0.10.05 1 50.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)


25˚C

–55˚CVCE(sat)

125˚C

(Cas

eT

emp)

0 .2 10.5 650.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　200VIC: IB1: IB2=10:1:–2

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10050

1

0.5

0.02

0.1

0.05

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

10 507 100 500 600 500 600

0.05

0.02

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

10ms

1m

s

DC

0

6

2

1

4

3

5

0 1.41.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 650.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(Cas

e Te

mp)



VCC(V)

200

RL(Ω)

100

IC(A)

2

VBB2(V)

–5

IB2(A)

–0.4

ton(µs)

1max

tstg(µs)

4.5max

tf(µs)

0.5max

IB1(A)

0.2

VBB1(V)

10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


71


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3831

600

500

10

10(Pulse20)

4

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3831

1max

100max

500min

10to30

0.5max

1 . 3 max

8typ

105typ

Unit

mA

µA

V

V

V

MHz

pF

Conditions

VCB=600V

VEB=10V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=1A

IC=5A, IB=1A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC3831(Ta=25°C) (Ta=25°C)





00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

800mA1A

600mA

400mA

200mA

IB=1.2

A

100mA

0.02 0.10.05 1 5 100.50

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

－55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)

0 .2 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　200VIC: IB1: IB2=10:1:–2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 500 60050

1

0.5

1

0.05

0.01

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

10 508 100 500 600

0.05

0.02

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100µs

10ms

1ms

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 1050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(C

ase

Tem

p)

Wi thout HeatsinkNatural Cool ingL=3mHIB2 =–0.5ADuty:less than 1%


VCC(V)

200

RL(Ω)

40

IC(A)

5

VBB2(V)

–5

IB2(A)

–1.0

ton(µs)

1max

tstg(µs)

4.5max

tf(µs)

0.5max

IB1(A)

0.5

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


72


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3832

500

400

10

7(Pulse14)

2

50(Tc=25)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3832

100max

100max

400min

10to30

0.5max

1.3max

10typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3832(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

4

2

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA

300mA

600mA

80

0m

A

200mA

IB=100mA

0.02 0.10.05 1 50.5 70

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)–55˚C (Case Temp)

25˚C

－55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)

0 .2 10.5 50.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　200VIC: IB1:–IB2=10:1:2

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mH–IB2=1ADuty:less than 1%

10 505 100 500

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0

7

2

4

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 750.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–30˚C

Typical Switching Characteristics (Common Emitter)VCC(V)

200

RL(Ω)

66.7

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


73


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3833

500

400

10

12(Pulse24)

4

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3833

100max

100max

400min

10to30

0.5max

1.3max

10typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=7A

IC=7A, IB=1.4A

IC=7A, IB=1.4A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC3833(Ta=25°C) (Ta=25°C)





00

4

2

6

8

10

12

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A) 600mA

400mA

200mA

800mA

1000mA

IB=100mA

0.02 0.10.05 1 5 100.50

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

－55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)

10.5 1050.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

0.05

0.01

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

0.05

0.01

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

10

ms

1m

sDC

(Tc=25 C)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0

12

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 121050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–30˚C

25˚C

(C

ase

Tem

p)


VCC(V)

200

RL(Ω)

28.5

IC(A)

7

VBB2(V)

–5

IB2(A)

–1.4

ton(µs)

1.0max

tstg(µs)

3.0max

tf(µs)

0.5max

IB1(A)

0.7

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


74

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3834

200

120

8

7(Pulse14)

3

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3834

100max

100max

120min

70to220

0.5max

1.2max

30typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=200V

VEB=8V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3834(Ta=25°C) (Ta=25°C)


VCC(V)

50

RL(Ω)

16.7

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

0.5max

tstg(µs)

3.0max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10





0

2

2.6

1

0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1

A

3A

5A

0 .02 0.1 0.5 1 7520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

–0.01 –0.1 –1–0.05 –0.5 –5

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


10 120505 2000.05

1

0.5

0.1

20

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100ms

10

ms

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

00

1

2

3

4

5

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

60mA

40mA

20mA

100mA

150mA200mA

IB=10mA

0

7

2

3

4

5

6

1

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=4V)

0.01 0.05 0.1 0.5 1 5 720

50

300

100


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0.3

0.5

1

4

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


75

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3835

200

120

8

7(Pulse14)

3

70(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3835

100max

100max

120min

70to220

0.5max

1.2max

30typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=200V

VEB=8V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3835(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

0

2

2.6

1

0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1

A

3A

0 .02 0.1 0.5 1 7520

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

5A


Typ

–0.01 –0.1 –1–0.05 –0.5 –5

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


10 120505 2000.05

1

0.5

0.1

20

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

10

ms

00

1

2

3

4

5

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

60mA

40mA

20mA

100mA

150mA200mA

IB=10mA

0.4

0.5

1

5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

7

2

3

4

5

6

1

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

(VCE=4V)

0.01 0.05 0.1 0.5 1 5 720

50

300

100


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

70

60

50

40

30

20

10

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


VCC(V)

50

RL(Ω)

16.7

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

0.5max

tstg(µs)

3.0max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


76

2SC3851/3851A




Pc–Ta Derating

00

1

2

3

4

21 3 4 5 6


Co

lle

cto

r C

urr

en

t IC

(A)

60mA

IB=70m

A


50mA

40mA

30mA

20mA

10mA

5mA

30

20

10

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

1.0

0.5

0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

2A

3A

0.01 0.1 0.5 1 420

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 800.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

(VCE=4V)

0.01 0.10.05 10.5 420

50

100

500


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

0

4

2

3

1

0 1.21.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

–0.005 –0.1 –0.5 –1 –4

20

10

0

30

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose


VCC(V)

12

RL(Ω)

6

IC(A)

2

VBB2(V)

–5

IB2(mA)

–200

ton(µs)

0.2typ

tstg(µs)

1typ

tf(µs)

0.3typ

IB1(mA)

200

VBB1(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

6

4

1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SC3851

80

60min

Unit

µA

V

µA

V

V

MHz

pF

(Ta=25°C) (Ta=25°C)

2SC3851A

100

80

2SC3851

80

60

2SC3851A

100

80min

100max

40to320

0.5max

15typ

60typ


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


100max

Conditions

VCB=

VEB=6V

IC=25mA

VCE=4V, IC=1A

IC=2A, IB=0.2A

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

77

2SC3852/3852AHigh hFELOW VCE (sat)




Pc–Ta Derating

00

1

2

3

21 3 4 5 6


Co

lle

cto

r C

urr

en

t IC

(A)

I B=12mA

0.5mA

1mA

2mA

3mA

5mA

8mA


0.01 0.1 0.5 1 3100

500

2000

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.01 0.1 0.5 1 3100

500

2000

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

0.5

1

5

1 10 100 1000

VCB=10VIE=–2A

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 1000.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0

1.0

1.0

0.5

0.001 0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

2A

3A

0

2

3

1

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

25˚C

–30˚C

125˚C

–0.005 –0.01 –0.1 –0.5–0.05 –2–1

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

30

20

10

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose


VCC(V)

20

RL(Ω)

20

IC(A)

1.0

VBB2(V)

–5

IB2(mA)

–30

ton(µs)

0.8typ

tstg(µs)

3.0typ

tf(µs)

1.2typ

IB1(mA)

15

VBB1(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

6

3

1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3852

80

60min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=6V

IC=25mA

VCE=4V, IC=0.5A

IC=2A, IB=50mA

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

2SC3852A

100

80min

100max

500min

0.5max

15typ

50typ


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


10max

2SC3852

80

60

2SC3852A

100

80

78


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3856

200

180

6

15

4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3856

100max

100max

180min

50min∗2.0max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3856(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

Co

lle

cto

r C

urr

en

t IC

(A)

0

15

10

5

0 21


(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 1503 10 100 2000.1

1

0.5

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

10ms

3ms

100ms


0.02 0.1 1 100.5 5 1520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

15

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

700mA

300mA500mA

200mA

100mA

50mA

IB=20mA

1A

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 15


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(A)

–1

ton(µs)

0.5typ

tstg(µs)

1.8typ

tf(µs)

0.6typ

IB1(A)

1

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



79

2SC3857





0

3

2

1

0 1 2 43

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=15A

10A

5A

Co

lle

cto

r C

urr

en

t IC

(A)

0

15

10

5

0 21


(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C

–30˚

C (

Cas

e T

emp)

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

2 10 100 3000.1

1

0.5

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)

3ms


DC 100ms

20ms 10ms

0.02 0.1 1 100.5 5 1520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

15

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A400mA

600mA

200mA

100mA

IB=50mA

1.5A

(VCE=4V)

0.02 0.5 5120

50

300

100

0.1 10 15


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3857

200

200

6

15

5

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3857

100max

100max

200min

50min∗3.0max

20typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=5A

IC=10A, IB=1A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.3typ

tstg(µs)

2.4typ

tf(µs)

0.4typ

IB1(A)

0.5

VBB1(V)

10

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C




80


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3858

200

200

6

17

5

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3858

100max

100max

200min

50min∗2.5max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=8A

IC=10A, IB=1A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC3858(Ta=25°C) (Ta=25°C)





0

3

2

1

0 1 2 3

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=15A10A

5A

Co

lle

cto

r C

urr

en

t IC

(A)

0

15

17

10

5

0 21


(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (

Cas

e T

emp)

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


Co

lle

cto

r C

urr

en

t IC

(A)

2 10 100 3000.1

1

0.5

10

50

5

3ms


DC

100ms

20ms

10ms

0.02 0.1 10.5 1710520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

10

17

15

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

500mA700mA1A

300mA

200mA

50mA

IB=20mA

1.5A

(VCE=4V)

0.02 0.5 1 5 100.1 17


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

10

50

100

200

–0.02 –0.1 –1 –100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

100mA


VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(A)

–1

ton(µs)

0.5typ

tstg(µs)

1.8typ

tf(µs)

0.6typ

IB1(A)

1

VBB1(V)

10

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C



∗ hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

81

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3890

500

400

10

7(Pulse14)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3890

100max

100max

400min

10to30

0.5max

1.3max

10typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3890(Ta=25°C) (Ta=25°C)


ton•tstg•t f–IC Characteristics (Typical) θ j -a–t Characteristics


Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

4

2

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA

300mA

600mA

200mA

100mA

IB=

80

0m

A

0.02 0.10.05 1 50.5 70

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)–55˚C (Case Temp)

25˚C

–55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)

0 .02 0.1 0.50.05 5 71

10

7

50

70


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)


Typ

10.2 0.5 750.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.3

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0

7

2

4

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–55˚

C (

Cas

e T

emp)


VCC(V)

200

RL(Ω)

66

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


82

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3927

900

550

7

10(Pulse15)

5

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3927

100max

100max

550min

10to28

0.5max

1.2max

6typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=5A

IC=5A, IB=1A

IC=5A, IB=1A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC3927(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

800mA

1A

600mA

400mA

200mA

1.2A

IB=100mA

0.02 0.10.05 1 5 100.50

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚CVCE(sat)

125˚C

(Cas

eTe

mp)

0 .2 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2=10:1.5:3

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

0.05

0.02

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500 600

0.05

0.02

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs10ms

1msDC

0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 1050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(C

ase

Tem

p)


VCC(V)

250

RL(Ω)

50

IC(A)

5

VBB2(V)

–5

IB2(A)

–1.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

0.5max

IB1(A)

0.75

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


83


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4020

900

800

7

3(Pulse6)

1.5

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4020

100max

100max

800min

10to30

0.5max

1.2max

6typ

40typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=0.7A

IC=0.7A, IB=0.14A

IC=0.7A, IB=0.14A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4020(Ta=25°C) (Ta=25°C)





0.03 0.10.05 1 50.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


VBE(sat)

VCE(sat)


0.1 10.5 30.2

0.5

56

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC:IB1:–IB2=2:0.3:1 Const.

0.3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


50 100 500 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

(IC/ IB=5)

0.02 0.10.05 1 30.52

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

125˚C

25˚C

–30˚C

00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA

400mA500mA

140mA

200mA

100mA

60mA

IB=20mA


VCC(V)

250

RL(Ω)

357

IC(A)

0.7

VBB2(V)

–5

IB2(A)

–0.35

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.1

VBB1(V)

10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


84

2SC4024Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4024

100

50

15

10

3

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4024

10max

10max

50min

300to1600

0.5max

24typ

150typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=100V

VEB=15V

IC=25mA

VCE=4V, IC=1A

IC=5A, IB=0.1A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

4

2

6

10

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

I B=35mA

5mA

25mA

30mA

10mA

15mA

20mA


0

1.0

1.5

0.5

0.002 0.01 0.1 21

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0 .02 0.1 0.5 51 10100

500

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.02 0.1 0.5 51 10100

500

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

IC=1A

5A

10A

3A

0.3

0.5

1

4

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 1000.2

1

0.5

30

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2

0

10

2

4

8

6

0 1.21.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

25˚C

–30˚C

125˚C

–0.05 –0.1 –1–0.5 –5 –10

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ




VCC(V)

20

RL(Ω)

4

IC(A)

5

IB2(A)

–0.1

ton(µs)

0.5typ

tstg(µs)

2.0typ

tf(µs)

0.5typ

IB1(A)

0.1


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


High hFELOW VCE (sat)

85

Application : DC Motor Driver and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4064

50

50

6

12

3

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4064

100max

10max

50min

50min

0.35max

40typ

180typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=50V

VEB=6V

IC=25mA

VCE=1V, IC=6A

IC=6A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=12V, f=1MHz

2SC4064(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

2

4

8

6

10

12

1.60.8 2.4 3.2 4 4.8 5.6 6


Co

lle

cto

r C

urr

en

t IC

(A)

20mA 100mA

60mA

40mA

20mA

10mA

IB=5mA


0

1.0

1.3

0.5

0.002 0.01 0.1 31

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

12A

3A6A

9A

0.02 0.1 1 10 1220

50

100

1000

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

Typ

0.02 0.1 1 10 1220

50

100

1000

500


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

0.3

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 1000.05

0.1

1

0.5

30

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0

12

10

2

4

8

6

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=1V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

25˚C

–30˚C

125˚C

–0.05 –0.1 –1–0.5 –5 –12–10

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2




VCC(V)

24

RL(Ω)

4

IC(A)

6

VBB2(V)

–5

IB2(A)

–0.12

ton(µs)

0.6typ

tstg(µs)

1.4typ

tf(µs)

0.4typ

IB1(A)

0.12

VBB1(V)

10

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


LOW VCE (sat)

86

2SC4065Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568)

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4065

60

60

6

±12

3

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VFEC

fT

COB

2SC4065

100max

60max

60min

50min

0.35max

2.5max

24typ

180typ

Unit

µA

mA

V

V

V

MHz

PF

Conditions

VCB=60V

VEB=6V

IC=25mA

VCE=1V, IC=6A

IC=6A, IB=1.3A

VECO=10A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

4

2

8

6

12

10

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

200m

A

IB=10mA

20mA

40mA

60mA

100mA150mA


0

1.0

1.3

0.5

0.005 0.01 0.1 31

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

12A

3A6A

9A

0.02 0.1 1 10 123

5

50

10

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

Typ

0.02 0.1 1 10 123

5

50

10

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

0.2

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 1000.05

0.1

1

0.5

30

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2

0

12

10

2

4

8

6

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=1V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

25˚C

–30˚C

125˚C

–0.05 –0.1 –1–0.5 –5 –12–10

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ




ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


Application : DC Motor Driver and General Purpose


VCC(V)

24

RL(Ω)

4

IC(A)

6

VBB2(V)

–5

IB2(A)

–0.12

ton(µs)

0.6typ

tstg(µs)

1.4typ

tf(µs)

0.4typ

IB1(A)

0.12

VBB1(V)

10

Built-in Diode at C–ELow VCE (sat)

B

C

E(400Ω )

Equivalentcircuit

87


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4073

500

400

10

5(Pulse10)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4073

100max

100max

400min

10to30

0.5max

1.3max

10typ

30typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4073(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

1

2

3

4

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA

400mA

300mA

200mA

IB=800m

A

100mA

50mA

0.01 0.10.05 1 50.50

2

1

(IC/ IB=5)


VBE(sat)


25

˚C

–55˚C

VCE(sat)125˚C

(Cas

eT

emp)

0 .1 10.5 50.1

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.3

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

0.05

0.01

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mHIB2=–0.5ADuty:less than1%

10 5052 100 500

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

100µs1ms

0.01 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

2

1

4

3

5

0 1.41.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)


VCC(V)

200

RL(Ω)

100

IC(A)

2

VBB2(V)

–5

IB2(A)

–0.4

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.2

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


88

Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4130

500

400

10

7(Pulse14)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4130

100max

100max

400min

10to30

0.5max

1.3max

15typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4130(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

4

2

6

7

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA

600mA

1000mA

200mA

100mA

50mA

IB=1

400m

A

0.02 0.10.05 1 5 70.50

2

1

(IC/ IB=5)


VBE(sat)


25˚C

–55˚CVCE(sat) 125˚C (Case Tem

p)

0.2 10.5 750.1

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 5052 500100

1

0.5

0.1

0.01

0.05

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 5052 100 500

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

100µs1ms

0.02 0.10.05 1 750.52

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

7

2

4

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)


VCC(V)

200

RL(Ω)

67

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

1max

tstg(µs)

2.2max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


89

Silicon NPN Epitaxial Planar Transistor

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4131

100

50

15

15(Pulse25)

4

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4131

10max

10max

50min

60to360

0.5max

1.2max

18typ

210typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=100V

VEB=15V

IC=25mA

VCE=1V, IC=5A

IC=5A, IB=80mA

IC=5A, IB=80mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC4131(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

4

15

8

12

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

85mA

15mA

25mA

40mA

80mA


IB=7mA

0

1.0

1.3

0.5

0.002 0.10.01 21

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

15A

3A5A

10A

0.02 0.1 1 10 1570

100

500

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

Typ

0.02 0.1 1 10 1570

100

500

1000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=1V)

0.3

0.5

1

3

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

ton•tstg•t f–IC Characteristics (Typical)

0.1 10.5 1050.08

0.1

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC　20VIC=5AIB1=–IB2

=80mA

10 503 5 1000.4

1

40

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

60

40

20

3.5

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

25˚C

–30˚C

125˚C

0

15

10

5

0 1.51.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=1V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)


VCC(V)

20

RL(Ω)

4

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.08

ton(µs)

0.5typ

tstg(µs)

2.0typ

tf(µs)

0.4typ

IB1(A)

0.08

VBB1(V)

10

Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


LOW VCE (sat)

90


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4138

500

400

10

10(Pulse20)

4

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4138

100max

100max

400min

10to30

0.5max

1.3max

10typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=6A

IC=6A, IB=1.2A

IC=6A, IB=1.2A

VCE=12V, IE=–0.7A

VCB=10V, f=1MHz

2SC4138(Ta=25°C) (Ta=25°C)





00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A

600mA

400mA

200mA

1.2A

IB=100mA

0.02 0.10.05 1 1050.50

1.4

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


VBE(sat)

VCE(sat)

0.1 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs1ms

(IC/ IB=5)

0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 1050.55

10

100

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C


VCC(V)

200

RL(Ω)

33.3

IC(A)

6

VBB2(V)

–5

IB2(A)

–1.2

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.6

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


91


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4139

500

400

10

15(Pulse30)

5

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4139

100max

100max

400min

10to30

0.5max

1.3max

10typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=8A

IC=8A, IB=1.6A

IC=8A, IB=1.6A

VCE=12V, IE=–1.5A

VCB=10V, f=1MHz

2SC4139(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0.10.050.03 1 5 10 200.50

1.5

0.5

1.0

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚C

VCE(sat)

125˚C(C

ase

Tem

p)

10.5 10 1550.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 5001001

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mHIB2=–1ADuty:less than 1%

10 505 100 500

5

1

10

50


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 151050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

00

5

10

15

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .2A

600mA

800mA

400mA

200mA

1.5A

IB=100mA


VCC(V)

200

RL(Ω)

25

IC(A)

8

VBB2(V)

–5

IB2(A)

–1.6

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.8

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


92


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4140

500

400

10

18(Pulse36)

6

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4140

100max

100max

400min

10to30

0.5max

1.3max

10typ

165typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=10A

IC=10A, IB=2A

IC=10A, IB=2A

VCE=12V, IE=–2.0A

VCB=10V, f=1MHz

2SC4140(Ta=25°C) (Ta=25°C)





00

8

4

12

16

18

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

800mA

1.2A

600mA

400mA

200mA

1.6A

IB=100mA

0.02 0.10.05 1 5 10 180.50

1

1.4

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚CVCE(sat)

125˚C

(Cas

eTe

mp)

10.2 0.5 10 1850.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 15010 505 500100

1

0.5

0.03

0.1

0.05

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

0.05

0.03

5

1

0.5

0.1

10

50


Co

lle

cto

r C

urr

en

t IC

(A)


100µs10ms1ms

DC

0.02 0.10.05 1 181050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

18

8

4

16

12

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)


VCC(V)

200

RL(Ω)

20

IC(A)

10

VBB2(V)

–5

IB2(A)

–2

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

1

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


93

Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4153

200

120

8

7(Pulse14)

3

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4153

100max

100max

120min

70to220

0.5max

1.2max

30typ

110typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=200V

VEB=8V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4153(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

3

4

2

1

5

7

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

200mA

150mA

100mA


IB=10mA

20mA

40mA

60mA

0

2

3

1

0.005 0.01 0.1 21

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A3A 5A

0.01 0.1 0.5 1 7520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.01 0.1 0.5 1 7520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

0.2

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

–0.01 –0.1 –1 –50

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)

Typ


10 100505 2000.05

1

0.5

0.1

20

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

10

ms

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

50x50x2

100x100x2

150x150x2


Without Heatsink

0

7

2

3

4

5

6

1

0 1.11.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

25˚C

–30˚C

125˚C




VCC(V)

50

RL(Ω)

16.7

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.6

ton(µs)

0.5max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.3

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


94


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4296

500

400

10

10(Pulse20)

4

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4296

100max

100max

400min

10to30

0.5max

1.3max

10typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=6A

IC=6A, IB=1.2A

IC=6A, IB=1.2A

VCE=12V, IE=–0.7A

VCB=10V, f=1MHz

2SC4296(Ta=25°C) (Ta=25°C)





00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A

600mA

400mA

200mA

1.2A

IB=100mA

0.02 0.10.05 1 1050.50

1.4

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


VBE(sat)

VCE(sat)

0.1 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.02

0.1

0.05

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

0.05

0.02

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

50µs100µs10ms

1ms

(IC/ IB=5)


0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 1050.55

10

100

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C


VCC(V)

200

RL(Ω)

33

IC(A)

6

VBB2(V)

–5

IB2(A)

–1.2

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.6

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


95


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4297

500

400

10

12(Pulse24)

4

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4297

100max

100max

400min

10to30

0.5max

1.3max

10typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=7A

IC=7A, IB=1.4A

IC=7A, IB=1.4A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC4297(Ta=25°C) (Ta=25°C)



VCE(sat) ,VBE(sat)–IC Temperature Characteristics (Typical)


00

4

2

6

8

10

12

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A) 600mA

400mA

200mA

800mA

1A

IB=100mA

0.02 0.10.05 1 5 100.50

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)


0

12

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

10.5 1050.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 505 500100

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

1

5

0.5

0.1

10

30


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0.02 0.10.05 1 121050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–30˚C


VCC(V)

200

RL(Ω)

28.5

IC(A)

7

VBB2(V)

–5

IB2(A)

–1.4

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.7

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


96


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4298

500

400

10

15(Pulse30)

5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4298

100max

100max

400min

10to30

0.5max

1.3max

10typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=8A

IC=8A, IB=1.6A

IC=8A, IB=1.6A

VCE=12V, IE=–1.5A

VCB=10V, f=1MHz

2SC4298(Ta=25°C) (Ta=25°C)



VCE(sat) ,VBE(sat)–IC Temperature Characteristics (Typical)


0.10.050.03 1 5 10 200.50

1.5

0.5

1.0

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚C

VCE(sat)

125˚C(C

ase

Tem

p)

10.5 10 1550.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 5001001

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 5001

5

10

50


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 151050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

00

15

5

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .2A1.5

A

600mA

800mA

400mA

200mA

IB=100mA


VCC(V)

200

RL(Ω)

25

IC(A)

8

VBB2(V)

–5

IB2(A)

–1.6

ton(µs)

1max

tstg(µs)

3max

tf(µs)

0.5max

IB1(A)

0.8

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


97


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4299

900

800

7

3(Pulse6)

1.5

70(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4299

100max

100max

800min

10to30

0.5max

1.2max

6typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=0.2A

IC=1A, IB=0.2A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4299(Ta=25°C) (Ta=25°C)





00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA

200mA

100mA

IB=50mA

500mA 400mA

0.02 0.10.05 10.5 30

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


125˚CVCE(sat)–55˚C

(Cas

eT

emp)

0 .01 0.10.05 1 30.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.1 10.5 30.2

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC:IB1:–IB2

　 =2:0.3:1 Const.

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

70

60

50

40

30

20

10

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


50 100 500 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)


VCC(V)

250

RL(Ω)

250

IC(A)

1

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.15

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


98


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4300

900

800

7

5(Pulse10)

2.5

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4300

100max

100max

800min

10to30

0.5max

1.2max

6typ

75typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4300(Ta=25°C) (Ta=25°C)





00

2

1

3

4

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA

500mA

400mA

300mA

200mA

700mA

IB=100mA

0.03 0.10.05 1 5 100.50

2

1

(IC/ IB=5)


VBE(sat)


25

˚C–

55

˚C

VCE(sat) 125˚C (Case Temp

)

0 .1 10.5 50.2

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC:IB1:–IB2

　 =2:0.3:1 Const.

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

0.05

0.01

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500 1000

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs1ms

10µs

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0

5

1

2

3

4

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C


VCC(V)

250

RL(Ω)

125

IC(A)

2

VBB2(V)

–5

IB2(A)

–1

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.3

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


99

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4301

900

800

7

7(Pulse14)

3.5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4301

100max

100max

800min

10to30

0.5max

1.2max

6typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC4301(Ta=25°C) (Ta=25°C)





00

4

2

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

700mA

500mA

300mA

200mA

IB=100mA

1A

0.02 0.10.05 1 50.5 70

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


–55˚CVCE(sat)125˚C

(Cas

eT

emp)

0 .1 10.5 750.2

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC:IB1:IB2=2:0.3:–1 Const.

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mHIB2=–1.0ADuty :less than1%

50 100 500 1000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

0

7

2

4

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 750.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C25˚C

–55˚C


VCC(V)

250

RL(Ω)

83

IC(A)

3

VBB2(V)

–5

IB2(A)

–1.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.45

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


100

Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4304

900

800

7

3(Pulse6)

1.5

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4304

100max

100max

800min

10to30

0.5max

1.2max

15typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=0.7A

IC=0.7A, IB=0.14A

IC=0.7A, IB=0.14A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4304(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

500mA

300mA

200mA

100mA

IB=50mA

700mA

0.10.050.01 310.50

1

2

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)25˚C (Case Temp)


125˚C (Case Temp)

25˚C (Case Temp)


VCE(sat)

0.1 10.5 20.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2=10:1.5:5

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.005

0.05

0.1

0.01

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 5052 100 500 1000

0.05

0.01

0.005

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs5

0µ

s

10

ms

1ms

DC

(Tc=25 C

)0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

0 .01 0.10.05 1 30.52

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)


VCC(V)

250

RL(Ω)

357

IC(A)

0.7

VBB2(V)

–5

IB2(A)

–0.35

ton(µs)

0.7max

tstg(µs)

4.0max

tf(µs)

0.7max

IB1(A)

0.1

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


101

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose

2SC4381/4382




Pc–Ta Derating

00

2

1.6

1.2

0.4

0.8

6 82 4 10


Co

lle

cto

r C

urr

en

t IC

(A)

50m

A

IB=5mA/Step


0

3

1

2

1002 10 1000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=0.5A 1A2A

210.10.0130

50

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=10V)

Typ

210.10.0130

50

100

400


DC

Cu

rre

nt

Ga

in h

FE

(VCE=10V)

0.5

1

6

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 100 30010.01

0.1

5

1


Co

lle

cto

r C

urr

en

t IC

(A)

Wi thout HeatsinkNatural Cool ing1.2SC43812.2SC4382

DC

1m

s

5m

s

20

ms

1 2

25˚C

–30˚C

125˚C

–0.01 –0.1 –0.5 –1 –2

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

30

20

10

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=10V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)


VCC(V)

20

RL(Ω)

20

IC(A)

1

VBB2(V)

–5

IB2(mA)

–100

ton(µs)

1.0typ

tstg(µs)

3.0typ

tf(µs)

1.5typ

IB1(mA)

100

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4381 2SC4382

150 200

150 200

6

2

1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4381 2SC4382

10max

150 200

10max

150min 200min

60min

1.0max

15typ

35typ

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=6V

IC=25mA

VCE=10V, IC=0.7A

IC=0.7A, IB=0.07A

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

102


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4388

200

180

6

15

4

85(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4388

10max

10max

180min

50min∗2.0max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4388(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

Co

lle

cto

r C

urr

en

t IC

(A)

0

15

10

5

0 21


(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 5053 100 2000.05

1

0.5

0.1

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

0.02 0.1 1 100.5 5 1520

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

15

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

50mA

IB=20mA

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 15


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

1A

700mA

500mA

300mA

200mA

100mA

100

80

60

40

20

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(A)

–1

ton(µs)

0.5max

tstg(µs)

1.8max

tf(µs)

0.6max

IB1(A)

1

VBB1(V)

10


103


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4418

500

400

10

5(Pulse10)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4418

100max

100max

400min

10to30

0.5max

1.3max

20typ

30typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=1.5A

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4418(Ta=25°C) (Ta=25°C)





00

1

2

3

4

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A) 600mA

1A

1.4A

400mA

200mA

1.8A

100mA

IB=50mA

0.01 0.10.05 1 50.50

2

1

(IC/ IB=5)


VBE(sat)


125˚C (Case Temp)

25˚C (Case Temp)


VCE(sat)

0.1 10.5 30.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.4

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.01

0.1

0.05

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 5052 100 500

0.05

0.01

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC10ms

100µs

50µs1ms

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

0

5

1

2

3

4

0 1.61.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(Cas

e Te

mp)

–55˚

C (C

ase

Tem

p)

0 .01 0.10.05 1 50.52

5

10

100

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ


VCC(V)

200

RL(Ω)

133

IC(A)

1.5

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

1max

tstg(µs)

2.5max

tf(µs)

0.5max

IB1(A)

0.15

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


104

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4434

500

400

10

15(Pulse30)

5

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4434

100max

100max

400min

10to25

0.7max

1.3max

10typ

135typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=8A

IC=8A, IB=1.6A

IC=8A, IB=1.6A

VCE=12V, IE=–1.5A

VCB=10V, f=1MHz

2SC4434(Ta=25°C) (Ta=25°C)


hFE–IC Temperature Characteristics (Typical) ton•tstg•t f–IC Characteristics (Typical) θ j -a–t Characteristics



00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A

600mA

400mA

200mA

1.2A

IB=100mA

0.10.05 1 5 100.50

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


( IC/ IB=5)


VBE(sat)

150˚C (Case Temp)

25˚C (Case Temp)

75˚C (Case Temp) 75

˚C25

˚C

VCE(sat)

150˚C(C

ase

Tem

p)

0

15

14

12

10

8

6

4

2

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

150˚

C (C

ase

Tem

p)75

˚C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)

0 .05 10.50.1 10 1555

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

150˚C

75˚C

25˚C

10.5 10 1550.05

0.1

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=5:1:2

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

40

5

Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500

1

0.5

0.1

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs



VCC(V)

200

RL(Ω)

25

IC(A)

8

VBB2(V)

–5

IB2(A)

–3.2

ton(µs)

0.5max

tstg(µs)

2.0max

tf(µs)

0.15max

IB1(A)

1.6

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


105


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4445

900

800

7

3(Pulse6)

1.5

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4445

100max

100max

800min

10to30

0.5max

1.2max

15typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=0.7A

IC=0.7A, IB=0.14A

IC=0.7A, IB=0.14A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4445(Ta=25°C) (Ta=25°C)





00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

500mA

300mA

200mA

100mA

50mA

IB=700mA

0.1 10.5 20.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2=10:1.5:5

60

40

20

3.5

00 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500 1000100

1

0.5

0.1

0.05

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 500 10000.05

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


50

µs

10

0µ

s

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

0 .10.050.01 310.50

1

2

(IC/ IB=5)


VBE(sat)


125˚C (Case Temp)

25˚C (Case Temp)


VCE(sat)

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

0 .01 0.10.05 1 30.52

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)


VCC(V)

250

RL(Ω)

357

IC(A)

0.7

VBB2(V)

–5

IB2(A)

–0.35

ton(µs)

0.7max

tstg(µs)

4max

tf(µs)

0.7max

IB1(A)

0.1

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


106


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4466

120

80

6

6

3

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4466

10max

10max

80min

50min∗1.5max

20typ

110typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=50mA

VCE=4V, IC=2A

IC=2A, IB=0.2A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4466(Ta=25°C) (Ta=25°C)


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

0.16typ

tstg(µs)

2.60typ

tf(µs)

0.34typ

IB1(A)

0.3

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b






0

3

2

1

0 0.5 1.0 1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=6A

2A4A

0

6

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

5 10 100500.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

1ms100ms

0.02 0.1 10.5 5 630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

80mA

50mA

30mA

20mA

150mA

100mA

IB=10mA

200mA

(VCE=4V)

0.02 0.5 65120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

20

10

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

0.3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


107


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4467

160

120

6

8

3

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4467

10max

10max

120min

50min∗1.5max

20typ

200typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=160V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4467(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=8A

2A4A

0

8

6

2

4

0 1.51.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 100 2000.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

0.02 0.1 0.5 1 5 820

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

100mA150mA

200mA

35

0m

A

75mA

50mA

20mA

IB=10mA

(VCE=4V)

0.02 0.5 5 8120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –80

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


VCC(V)

40

RL(Ω)

10

IC(A)

4

VBB2(V)

–5

IB2(A)

–0.4

ton(µs)

0.13typ

tstg(µs)

3.50typ

tf(µs)

0.32typ

IB1(A)

0.4

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



108


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4468

200

140

6

10

4

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4468

10max

10max

140min

50min∗0.5max

20typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4468(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A5A

0

10

2

6

4

8

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

1053 100 200500.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms

3ms

10

ms


0.02 0.1 0.5 1 5 1020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V) (VCE=4V)

Typ

00

2

4

6

10

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

150mA200mA

100mA

75mA

50mA

20mA

IB=10mA

300mA

400mA

0.02 0.5 5120

50

300

100

0.1 10


DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.24typ

tstg(µs)

4.32typ

tf(µs)

0.40typ

IB1(A)

0.5

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



109

Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4495

80

50

6

3

1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4495

10max

10max

50min

500min

0.5max

40typ

30typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=80V

VEB=6V

IC=25mA

VCE=4V, IC=0.5A

IC=1A, IB=20mA

VCE=12V, IE=–0.1A

VCB=10V,f=1MHz

2SC4495(Ta=25°C) (Ta=25°C)




Pc–Ta Derating

00

1

2

3

21 3 4 5 6


Co

lle

cto

r C

urr

en

t IC

(A)

30mA

IB=0.5mA

18mA

12mA

1mA

2mA

3mA

8mA

5mA


0

1.5

0.5

1

1001 10 1000

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

2A

3A

310.1 0.50.01100

500

1000

3000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

–0.005 –0.01 –0.1 –10

20

40

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

10 503 5 1000.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2

0

3

2.5

0.5

1.5

1

2

0 1.510.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–55˚

C (

Cas

e T

emp)


DC

Cu

rre

nt

Ga

in h

FE

1

7

5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

310.1 0.50.0120

100

50

500

1000

5000(VCE=4V)

125˚C

–55˚C

25˚C




VCC(V)

20

RL(Ω)

20

IC(A)

1

VBB2(V)

–5

IB2(mA)

–30

ton(µs)

0.45typ

tstg(µs)

1.60typ

tf(µs)

0.85typ

IB1(mA)

15

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


High hFELOW VCE (sat)

110

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725)

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4511

120

80

6

6

3

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4511

10max

10max

80min

50min∗0.5max

20typ

110typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=25mA

VCE=4V, IC=2A

IC=2A, IB=0.2A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4511(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=6A

2A4A

0

6

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .4

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

3 5 10 100500.05

0.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

100ms

0.02 0.1 10.5 5 630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

1

3

2

4

6

5

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

80mA

50mA

30mA

20mA

150mA

100mA

IB=10mA

200mA

(VCE=4V)

0.02 0.5 65120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

20

10

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

0.16typ

tstg(µs)

2.60typ

tf(µs)

0.34typ

IB1(A)

0.3

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



Application : Audio and General Purpose

111


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4512

120

80

6

6

3

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4512

10max

10max

80min

50min

0.5max

20typ

110typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=25mA

VCE=4V, IC=2A

IC=5A, IB=0.2A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4512(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=6A

2A4A

0

6

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .4

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

103 5 10050

0.1

0.05

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

100ms

0.02 0.1 1 5 630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

80mA

50mA

30mA

20mA

150mA

100mA

IB=10mA

200mA

(VCE=4V)

0.02 0.50.5 65120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

20

10

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

0.16typ

tstg(µs)

2.60typ

tf(µs)

0.34typ

IB1(A)

0.3

VBB1(V)

10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b



112


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4517 2SC4517A

900 1000

550

7

3(Pulse6)

1.5

30(Tc＝25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4517 2SC4517A

100max

100max

550min

10to30

0.5max

1.2max

6typ

35typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=0.2A

IC=1A, IB=0.2A

VCE=12V, IE=–0.25A

VCB=10V, f=1MHz

2SC4517/4517A(Ta=25°C) (Ta=25°C)





0.03 0.10.05 1 50.50

1.5

1.0

0.5

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


VBE(sat)

VCE(sat)

IC/ IB=5 Const.

0.2 10.5 30.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1: IB2=1:0.15:–0.45

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50 500 1000100

1

0.5

0.1

0.01

0.05

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


2SC4517 2SC4517A

10 5052 100 1000500

0.05

0.01

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

50µs


0.02 0.10.05 1 30.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

3

1

2

0 0.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA400m

A

200mA

150mA

100mA

IB=40mA


VCC(V)

250

RL(Ω)

250

IC(A)

1

VBB2(V)

–5

IB2(A)

–0.45

ton(µs)

0.7max

tstg(µs)

4max

tf(µs)

0.5max

IB1(A)

0.15

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


113

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose

2SC4518/4518A




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0.03 0.10.05 1 1050.50

1.5

1.0

0.5


VBE(sat)

VCE(sat)

IC/ IB=5 Const.

0.2 10.5 50.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1: IB2=1:0.15:–0.5

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50 500 1000100

1

5

0.5

0.1

0.03

0.05

20

10


Co

lle

cto

r C

urr

en

t IC

(A)


2SC4518 2SC4518A

10 50 100 500 1000

1

0.5

0.03

0.05

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0.02 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

5

1

2

3

4

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

00

2

1

5

3

4

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA700mA

400mA

150mA

250mA

IB=50mA


VCC(V)

250

RL(Ω)

139

IC(A)

1.8

VBB2(V)

–5

IB2(A)

–0.9

ton(µs)

0.7max

tstg(µs)

4max

tf(µs)

0.5max

IB1(A)

0.27

VBB1(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4518 2SC4518A

900 1000

550

7

5(Pulse10)

2.5

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4518 2SC4518A

100max

100max

550min

10to25

0.5max

1.2max

6typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1.8A

IC=1.8A, IB=0.36A

IC=1.8A, IB=0.36A

VCE=12V, IE=–0.35A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


114

Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4546

600

400

7

7(Pulse14)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4546

100max

100max

400min

10to25

0.7max

1.3max

10typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=600V

VEB=7V

IC=25mA

VCE=4V, IC=3A

IC=3A, IB=0.6A

IC=3A, IB=0.6A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4546(Ta=25°C) (Ta=25°C)



IC–VBE Temperature Characteristics (Typical)VCE(sat)–IC Characteristics (Typical)


0.02 0.05 0.1 0.5 1 1050

0.5

1.0


IC/IB=5 Const.

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0

7

6

5

4

3

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

0 .2 10.5 50.02

0.1

0.05

0.5

2

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=5:1:–2

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 50 700500100

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 700500

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0.02 0.10.05 1 750.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–30˚C

00

2

1

7

3

4

5

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A 800mA

400mA

600mA

300mA

200mA

IB=50mA


VCC(V)

200

RL(Ω)

67

IC(A)

3

VBB2(V)

–5

IB2(A)

–1.2

ton(µs)

0.5max

tstg(µs)

2max

tf(µs)

0.15max

IB1(A)

0.6

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


115


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4557

900

550

7

10(Pulse20)

5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4557

100max

100max

550min

10to28

0.5max

1.2max

6typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=5A

IC=5A, IB=1A

IC=5A, IB=1A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC4557(Ta=25°C) (Ta=25°C)





00

2

4

6

8

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1A

600mA

800mA

400mA

200mA

1.2A

IB=100mA

0.10.050.02 1 5 100.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)


25˚C

–55˚CVCE(sat) 125˚C (Case Temp)

0.2 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2=10:1.5:3

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50010 50 1000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500 10000.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 1050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(C

ase

Tem

p)


VCC(V)

250

RL(Ω)

50

IC(A)

5

VBB2(V)

–5

IB2(A)

–1.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

0.5max

IB1(A)

0.75

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


116


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4662

500

400

10

5(Pulse10)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4662

100max

100max

400min

10to30

0.5max

1.3max

20typ

30typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=1.5A

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0.10.050.01 1 50.50

2

1

(IC/ IB=5)


VBE(sat)


25˚C

–55˚C

VCE(sat) 125˚C (Case

Tem

p)

0 .1 10.5 30.1

0.5

3

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.4

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 505 100 5000.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0.01 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0

2

1

4

3

5

0 1.41.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)


VCC(V)

200

RL(Ω)

133

IC(A)

1.5

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

1max

tstg(µs)

2.5max

tf(µs)

0.5max

IB1(A)

0.15

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


2SC4662

117


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4706

900

600

7

14(Pulse28)

7

130(Tc=25°C)

150

–55to+150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4706

100max

100max

600min

10to25

0.5max

1.2max

6typ

160typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=7A

IC=7A, IB=1.4A

IC=7A, IB=1.4A

VCE=12V, IE=–1.5A

VCB=10V, f=1MHz

2SC4706(Ta=25°C) (Ta=25°C)





00

2

4

6

8

12

10

14

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA

800mA

1.2A

400mA

200mA

IB=100mA

1.6A

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

0 .02 0.10.05 1 1050.50

2

1


VBE(sat)

VCE(sat)

IC/ IB=5 Const.

10.2 0.5 10 1450.1

0.5

5

8

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1:–IB2=10:1.5:5

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150100 50050 1000

1

0.5

0.1

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500 1000

10

1

0.5

0.1

50


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0

14

12

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 141050.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C


VCC(V)

250

RL(Ω)

35.7

IC(A)

7

VBB2(V)

–5

IB2(A)

–3.5

ton(µs)

1max

tstg(µs)

5max

tf(µs)

0.7max

IB1(A)

1.05

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


118

2SC4883/4883A





0

3

2

1

2 105 10050 1000500

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0 .5A 1AIC=2A

0

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

1

7

5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 100 2000.01

0.1

0.5

1

1

5

0.5


Co

lle

cto

r C

urr

en

t IC

(A)


1.2SC48832.2SC4883A

DC

100ms

10ms

1m

s

1 2

0.01 0.1 0.50.05 1 2

50

40

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

1

2

4 62 8 10


Co

lle

cto

r C

urr

en

t IC

(A)

30mA

15mA

10mA

IB=5mA

100mA 60mA

(VCE=4V)

0.01 0.05 0.5 230

50

300

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

1

125˚C

25˚C

–55˚C

–0.01 –0.1 –1 –20

60

80

100

120

140

40

20

160

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

6

2

1

20(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4883

150

150min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=6V

IC=10mA

VCE=10V, IC=0.7A

IC=0.7A, IB=70mA

VCE=12V, IE=–0.7A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

2SC4883A

180

180

2SC4883

150

150

2SC4883A

180

180min

10max

60to240

1.0max

120typ

30typ


VCC(V)

20

RL(Ω)

20

IC(A)

1

VBB2(V)

–5

IB2(mA)

–100

ton(µs)

0.5typ

tstg(µs)

1.5typ

tf(µs)

0.5typ

IB1(mA)

100

VBB1(V)

10

10max

119


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4886

150

150

5

14

3

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC4886

100max

100max

150min

50min∗2.0max

60typ

200typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=25mA

VCE=4V, IC=5A

IC=5A, IB=500mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

LAPT 2SC4886(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current IB(A)

IC=10A

5A

0

14

10

5

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

–30˚

C (C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 5052 100 200150

0.05

1

0.5

0.1

10

40

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0.02 0.1 0.5 1 5 141020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

14

10

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA500mA600mA

300mA

100mA

150mA

200mA

IB=20mA

750m

A

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 14


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

50mA

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.26typ

tstg(µs)

1.5typ

tf(µs)

0.35typ

IB1(A)

0.5

VBB1(V)

10



120


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4907

600

500

10

6(Pulse12)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4907

1max

100max

500min

10to30

0.5max

1.3max

8typ

45typ

Unit

mA

µA

V

V

V

MHz

pF

Conditions

VCB=600V

VEB=10V

IC=25mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4907(Ta=25°C) (Ta=25°C)





00

2

1

3

4

5

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA

800mA

400mA

300mA

200mA

1A

IB=100mA

0.10.050.02 1 50.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)

( IC/ IB=5)


VBE(sat)


25˚C

–55˚

C

VCE(sat) 125˚C (Case Tem

p)

0.2 10.5 650.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50010010 50 1000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500 10000.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

0

6

2

1

4

3

5

0 1.41.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

0 .02 0.10.05 1 650.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

25˚C

(Cas

e Te

mp)


VCC(V)

200

RL(Ω)

100

IC(A)

2

VBB2(V)

–5

IB2(A)

–0.4

ton(µs)

1max

tstg(µs)

4.5max

tf(µs)

0.5max

IB1(A)

0.2

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


121


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4908

900

800

7

3(Pulse6)

1.5

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4908

100max

100max

800min

10to30

0.5max

1.2max

6typ

40typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=0.7A

IC=0.7A, IB=0.14A

IC=0.7A, IB=0.14A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC4908(Ta=25°C) (Ta=25°C)





0.03 0.10.05 1 50.50

2

1

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


VBE(sat)

VCE(sat)

IC/ IB=5 Const,

0.02 0.10.05 1 30.52

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)


0.1 10.5 30.2

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1: IB2=2:0.3:–1

0

3

1

2

0 1.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

100 50050 1000

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


50 100 1000500

1

0.5

0.1

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


100µs

125˚C

25˚C

–30˚C

00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

400mA

300mA

500m

A

200mA

140mA

60mA

IB=20mA


VCC(V)

250

RL(Ω)

357

IC(A)

0.7

VBB2(V)

–5

IB2(A)

–0.35

ton(µs)

1max

tstg(µs)

5max

tf(µs)

1max

IB1(A)

0.1

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


122

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5002

1500

800

6

7(Pulse14)

3.5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


SymbolICBO1

ICBO2

IEBO

V(BR)CEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fTCOB

2SC5002

100max

1max

100max

800min

8min

4to95max

1.5max

4typ

100typ

UnitµAmAµAV

VV

MHzpF

ConditionsVCB=1200VVCB=1500V

VEB=6VIC=10mA

VCE=5V, IC=1AVCE=5V, IC=5AIC=5A, IB=1.2A IC=5A, IB=1.2A

VCE=12V, IE=–0.5AVCB=10V, f=1MHz

2SC5002(Ta=25°C) (Ta=25°C)


VCC(V)

200

RL(Ω)

50

IC(A)

4

VBB2(V)

–5

IB2(A)

–1.6

tstg(µs)

4.0max

tf(µs)

0.2max

IB1(A)

0.8

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab




Pc–Ta Derating

0

7

6

4

2

0 1.50.5 1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=5V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


500100 10001

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


0.02 0.10.05 0.5 1 5 72

5

10

100

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=5V)

125˚C

25˚C

–30˚C

tstg•t f–IC Characteristics (Typical)

0.2 1 50.5 70.1

0.5

5

20

10

1

Sw

itc

hin

g T

ime

ts

tg•t

f(µ

s)


tstg

t f

VCC=200VIC : IB1: –IB2 =5 :1: 2

100µs

0

3

2

1

0.02 0.1 0.5 1 105


Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

( IC: IB=5 :1)

Reverse Bias Safe Operating Area

100 50050 20001000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


Time t(ms)

0.1

1

3

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



00

2

1

7

3

4

5

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .5A 1.2A

400mA

700mA

200mA

IB=100mA

..

123

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5003

1500

800

6

7(Pulse14)

3.5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


SymbolICBO1

ICBO2

ICEO

VEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

VFEC

fTCOB

2SC5003100max

1max

1max

6min

8min

4to95max

1.5max

2.0max

4typ

100typ

UnitµAmAmAV

VVV

MHzpF

ConditionsVCB=1200VVCB=1500VVCE=800VIEB=300mA

VCE=5V, IC=1AVCE=5V, IC=5AIC=5A, IB=1.2A IC=5A, IB=1.2A

IEC=7AVCE=12V, IE=–0.5AVCB=10V, f=1MHz

2SC5003(Ta=25°C) (Ta=25°C)


VCC(V)

200

RL(Ω)

50

IC(A)

4

VBB2(V)

–5

IB2(A)

–1.6

tstg(µs)

4.0max

tf(µs)

0.2max

IB1(A)

0.8

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


Built-in Damper Diode



Pc–Ta Derating

0

3

2

1

0.2 0.5 1 105


80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


500100 10001

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

( IC: IB=5 :1)


100µs

0

7

6

4

2

0 1.50.5 1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=5V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .02 0.10.05 0.5 1 5 72

5

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=5V)

125˚C

25˚C

–30˚C

0.2 1 50.5 70.1

0.5

5

20

10

1

Sw

itc

hin

g T

ime

ts

tg•t

f(µ

s)


tstg

t f

VCC=200VIC : IB1: –IB2 =5 :1: 2

Time t(ms)

0.1

1

3

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



100 50050 20001000

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)



00

2

1

7

3

4

5

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

1 .7A 1.4A

600mA

900mA

300mA

IB=100mA

..

B

C

E(50Ω )

Equivalent circuit

124


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5071

500

400

10

12(Pulse24)

4

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5071

100max

100max

400min

10to30

0.5max

1.3max

10typ

105typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=7A

IC=7A, IB=1.4A

IC=7A, IB=1.4A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC5071(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


00

4

2

6

8

10

12

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A) 600mA

400mA

200mA

800mA

1A

IB=100mA

0.02 0.10.05 1 5 100.50

1

(IC/ IB=5)


VBE(sat)

125˚C (Case Temp)

25˚C (Case Temp)


25˚C

–55˚C

VCE(sat)

125˚C

(Cas

eTe

mp)

0

12

10

8

6

4

2

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .02 0.10.05 1 101250.58

10

40


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–30˚C

10.5 121050.1

0.5

5

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1: IB2=10:1:–2

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

Wi thout HeatsinkNatural Cool ingL=3mHIB2 =1.0ADuty: less than 1%

10 505 100 500

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs


0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


VCC(V)

200

RL(Ω)

28.5

IC(A)

7

VBB2(V)

–5

IB2(A)

–1.4

ton(µs)

1.0max

tstg(µs)

3.0max

tf(µs)

0.5max

IB1(A)

0.7

VBB1(V)

10

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



125

2SC5099





0

3

2

1

0 0.5 1.0 1.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=6A

2A4A

0

6

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

60

40

20

3.5

00 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

5 10 100500.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

1ms100ms

0.02 0.1 1 5 630

50

100

300


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

80mA

50mA

30mA

20mA

150mA

100mA

IB=10mA

200mA

(VCE=4V)

0.02 0.50.5 65120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

20

10

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5099

120

80

6

6

3

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC5099

10max

10max

80min

50min∗0.5max

20typ

110typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=50mA

VCE=4V, IC=2A

IC=2A, IB=0.2A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

0.16typ

tstg(µs)

2.60typ

tf(µs)

0.34typ

IB1(A)

0.3

VBB1(V)

10

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab




126

2SC5100





0

3

2

1

0 0.2 0.4 0.6 0.8 1.0

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=8A

2A4A

0

8

6

2

4

0 1.51.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

0 .2

1

4

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

DC


100ms

10ms

105 50 100 1500.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

0 .02 0.1 0.5 1 5 820

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

2

4

6

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

100mA150mA

200mA

35

0m

A

75mA

50mA

20mA

IB=10mA

(VCE=4V)

0.02 0.5 5 8120

50

200

100

0.1


DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –80

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5100

160

120

6

8

3

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC5100

10max

10max

120min

50min∗0.5max

20typ

200typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=160V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab




VCC(V)

40

RL(Ω)

10

IC(A)

4

VBB2(V)

–5

IB2(A)

–0.4

ton(µs)

0.13typ

tstg(µs)

3.50typ

tf(µs)

0.32typ

IB1(A)

0.4

VBB1(V)

10


127


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5101

200

140

6

10

4

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC5101

10max

10max

140min

50min∗0.5max

20typ

250typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC5101(Ta=25°C) (Ta=25°C)





0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A5A

0

10

2

6

4

8

0 21

Base-Emit ter Vol tage VBE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)

–30˚

C (

Cas

e T

emp)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 503 5 100 2000.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10

0m

s1

0m

s

0.02 0.1 0.5 1 5 1020

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V) (VCE=4V)

Typ

00

2

4

6

10

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

150mA200mA

100mA

75mA

50mA

20mA

10mA

300mA

IB=400m

A

0.02 0.5 5120

50

300

100

0.1 10


DC

Cu

rre

nt

Ga

in h

FE 125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

40

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab




VCC(V)

60

RL(Ω)

12

IC(A)

5

VBB2(V)

–5

IB2(A)

–0.5

ton(µs)

0.24typ

tstg(µs)

4.32typ

tf(µs)

0.40typ

IB1(A)

0.5

VBB1(V)

10


128

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5124

1500

800

6

10(Pulse20)

5

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SC5124(Ta=25°C)



Pc–Ta Derating

0.02 0.1 1 1050.53

5

10

40


DC

Cu

rre

nt

Ga

in h

FE

(VCE=5V)

125˚C

25˚C

–55˚C

0

10

2

6

4

8

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=5V)


5 10 10050 500 10000.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0.02 0.05 0.1 0.5 1 1050

2

1

3


Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C/IB=5:1

0.2 10.5 1050.1

0.5

5

10

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

t f

VCC 200VIC: IB1:–IB2=5:1:2



100 50050 20001000

1

0.5

0.1

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)



00

2

10

4

6

8

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

2 .4A

700mA

1.2A

1.8A

300mA

IB=100mA


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



VCC(V)

200

RL(Ω)

33.3

IC(A)

6

VBB2(V)

–5

IB2(A)

–2.4

ton(µs)

0.1typ

tstg(µs)

4.0typ

tf(µs)

0.2typ

IB1(A)

1.2

VBB1(V)

10

Application : Display Horizontal Deflection Output, Switching Regulator and General PurposeSilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)


SymbolICBO1

ICBO2

IEBO

V(BR)CEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fTCOB

2SC5124

100max

1max

100max

800min

8min

4to95max

1.5max

3typ

130typ

UnitµAmAµAV

VV

MHzpF

ConditionsVCB=1200VVCB=1500V

VEB=6VIC=10mA

VCE=5V, IC=1AVCE=5V, IC=8AIC=8A, IB=2A IC=8A, IB=2A

VCE=12V, IE=–1AVCB=10V, f=1MHz

(Ta=25°C)

19.1

129


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5130

600

400

10

5(Pulse10)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5130

100max

10max

400min

10to30

0.5max

1.3max

20typ

30typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=1.5A

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC5130(Ta=25°C) (Ta=25°C)


VCC(V)

200

RL(Ω)

133

IC(A)

1.5

VBB2(V)

–5

IB2(A)

–0.3

ton(µs)

1max

tstg(µs)

2max

tf(µs)

0.3max

IB1(A)

0.15

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab






0.01 0.05 0.1 0.5 1 50

0.5

1.5

1.0


IC/IB=5 Const.

125˚C (Case Temp)

25˚C (Case Temp)

–55˚C (Case Temp)Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0 .01 0.10.05 1 50.55

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.1 310.50.1

0.5

2

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)

0

2

1

4

3

5

0 1.41.20.4 0.6 0.8 1.00.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)


tstg

ton

t fVCC 200VIC: IB1:–IB2=10:1:2

0.4

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 505 500100

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mH–IB2=0.5ADuty:less than 1%

10 505 100 500

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

50µs


00

2

1

5

3

4

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

800mA

500mA

150mA

300mA

IB=50mA

130


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5239

900

550

7

3(Pulse6)

1.5

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5239

100max

100max

550min

10to30

0.5max

1.2max

6typ

35typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=0.2A

IC=1A, IB=0.2A

VCE=12V, IE=–0.25A

VCB=10V, f=1MHz

2SC5239(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0.03 0.10.05 1 50.50

1.5

1.0

0.5


VBE(sat)

VCE(sat)

IC/ IB=5 Const.

0

5

4

3

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

0.02 0.10.05 1 5 60.5

54

10

40


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.2 10.5 30.1

0.5

57

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1: IB2=1:0.15:–0.45

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 50 500 1000100

1

0.5

0.1

0.01

0.05

57


Co

lle

cto

r C

urr

en

t IC

(A)


10 50 100 500

0.05

0.01

1

0.5

0.1

57


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

50µs


00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA400m

A

200mA

150mA

100mA

IB=40mA


VCC(V)

250

RL(Ω)

250

IC(A)

1

VBB2(V)

–5

IB2(A)

–0.45

ton(µs)

0.7max

tstg(µs)

4.0max

tf(µs)

0.5max

IB1(A)

0.15

VBB1(V)

10


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


131


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5249

600

600

7

3(Pulse6)

1.5

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5249

100max

100max

600min

20to40

0.5max

1.2max

6typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=600V

VEB=7V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=0.2A

IC=1A, IB=0.2A

VCE=12V, IE=–0.3A

VCB=10V, f=1MHz

2SC5249(Ta=25°C) (Ta=25°C)





0.01 0.05 0.1 0.5 1 30

0.5


IC/IB=5 Const.

125˚C (Case Temp)

25˚C (Case Temp)


Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0

3

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)–5

5˚C

(C

ase

Tem

p)

0 .01 0.10.05 1 30.55

50

10

200

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.1 10.5 30.2

0.5

10

5

30

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 200VIC: IB1:–IB2=10:1:1

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 50 500100

1

0.5

0.1

0.05

5

7


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingL=3mH–IB2=–1.0ADuty:less than 1%

10 50 100 5000.05

1

0.5

0.1

5

7


Co

lle

cto

r C

urr

en

t IC

(A)

10

0µ

s


00

2

1

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

300mA

200mA

50mA

100mA

IB=20mA


VCC(V)

200

RL(Ω)

200

IC(A)

1

VBB2(V)

–5

IB2(A)

–0.1

ton(µs)

1.0max

tstg(µs)

19max

tf(µs)

1.0max

IB1(A)

0.1

VBB1(V)

10


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


132

Silicon NPN Triple Diffused Planar Transistor Application : Resonant Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5271

300

200

7

5(Pulse10)

2

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

COB

2SC5271

100max

100max

200min

10to30

15min

1.0max

1.5max

10typ

45typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=300V

VEB=7V

IC=10mA

VCE=2V, IC=2.5A

VCE=2V, IC=1mA

IC=2.5A, IB=0.5A

IC=2.5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC5271(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



VCC(V)

150

RL(Ω)

60

IC(A)

2.5

VBB2(V)

–5

IB2(A)

–1.0

ton(µs)

0.3max

tstg(µs)

1.0max

tf(µs)

0.1max

IB1(A)

0.5

VBB1(V)

10

133


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5287

900

550

7

5(Pulse10)

2.5

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5287

100max

100max

550min

10to25

0.5max

1.2max

6typ

50typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1.8A

IC=1.8A, IB=0.36A

IC=1.8A, IB=0.36A

VCE=12V, IE=–0.35A

VCB=10V, f=1MHz

2SC5287(Ta=25°C) (Ta=25°C)




Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)B

as

e-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

BE

(sa

t)(V

)


0.03 0.10.05 1 750.50

1.5

1.0

0.5


VBE(sat)

VCE(sat)

IC/ IB=5 Const.

0

7

5

6

4

3

2

1

0 1.00.5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

0.02 0.10.05 1 1050.545

10

40


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

25˚C

–55˚C

0.2 10.5 50.1

0.5

56

1

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 250VIC: IB1: IB2=1:0.15:–0.5

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50 500 1000100

1

5

0.5

0.1

0.03

0.05

20

10


Co

lle

cto

r C

urr

en

t IC

(A)

Without HeatsinkNatural CoolingIB2=–1.0AL=3mHDuty:less than 1%

10 50 100 500

1

0.5

0.03

0.1

0.05

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

100µs

50µs

00

2

1

5

3

4

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

600mA700mA

400mA

150mA

250mA

IB=50mA



VCC(V)

250

RL(Ω)

139

IC(A)

1.8

VBB2(V)

–5

IB2(A)

–0.9

ton(µs)

0.7max

tstg(µs)

4.0max

tf(µs)

0.5max

IB1(A)

0.27

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


134

Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5333

300

300

6

2

0.2

35(Tc=25°C)

150

–55to+150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC5333

1.0max

1.0max

300min

30min

1.0max

10typ

75typ

Unit

mA

mA

V

V

MHz

pF

Conditions

VCB=300V

VEB=6V

IC=25mA

VCE=4V, IC=0.5A

IC=1.0A, IB=0.2A

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

2SC5333(Ta=25°C) (Ta=25°C)




00

1

2

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=200mA

IB=20mA/stop


0

3

2

1

0 0.1 0.2 0.3

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A2A

3 10 1000 200010010

50

100

200


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0

2

1

0 1.00.80.60.40.2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

(VCE=4V)

3 5 10 50 100 500 1000 200010

50

200

100


DC

Cu

rre

nt

Ga

in h

FE

25˚C

–30˚C

125˚C

–0.003 –0.01 –0.05 –0.1 –0.5 –1

10

0

20

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Pc–Ta Derating

0.3

1

4

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


VCC(V)

100

RL(Ω)

100

IC(A)

1.0

IB2(A)

–0.2

ton(µs)

0.3typ

tstg(µs)

4.0typ

tf(µs)

1.0typ

IB1(A)

0.1


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VB2(V)

–5

135

Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC5370

60

40

7

12

3

30(Tc=25°C)

150

–55to+150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC5370

10max

10max

40min

70min∗0.3max

1.2max

90typ

120typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=60V

VEB=7V

IC=25mA

VCE=2V, IC=6A

IC=6A, IB=0.3A

IC=6A, IB=0.3A

VCE=12V, IE=–3A

VCB=10V, f=1MHz

2SC5370(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


∗ hFE Rank O(70to140), Y(120to240), G(200to400)

136

Darlington 2SD1769





0

3

2

1

0.3 5 101 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

0

6

8

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=2V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

0 .2

1

10

5

0.5

1 10 10050 10005 5000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

50

40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

103 5 200100500.08

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

3m

s

1m

s

0.03 0.1 1 5 1080

500

1000

10000

5000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

00

2

4

8

6

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

0 .7mA

1.5mA

1mA

2mA3mA

5mA

10mA

20mA

0.5mA

0.4mA

IB=0.3mA

0.5

Typ

50

0µ

s

IC=6A

2A4A


DC

Cu

rre

nt

Ga

in h

FE

0 .03 0.05 0.5 1 5 100.1

100

5030

500

1000

5000

10000(VCE=2V)

125˚C

25˚C

–30˚C


–0.05 –1–0.5 –8–50

50

120

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD1769

120

120

6

6(Pulse10)

1

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD1769

10max

20max

120min

2000min

1.5max

2.0max

100typ

typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=2V, IC=3A

IC=3A, IB=3mA

IC=3A, IB=3mA

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–1.5

IB2(mA)

–3

ton(µs)

0.5typ

tstg(µs)

5.5typ

tf(µs)

1.5typ

IB1(mA)

3

VBB1(V)

10


B

C

E(2.5kΩ)(200Ω)

Equivalentcircuit

137

Darlington 2SD1785





0.4 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=2V)

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

–0.05 –0.1 –1–0.5 –8–50

50

120

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

00

2

4

8

6

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

0 .7mA

1.5mA

1mA

2mA3mA

5mA

10mA

20mA

0.5mA

0.4mA

IB=0.3mA

0

6

8

4

2 125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .03 0.1 1 5 10

100

500

1000

10000

5000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

0.5

Typ

103 5 200100500.05

1

0.1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

10ms

1m

s


0

3

2

1

0.3 5 101 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=6A

2A4A


DC

Cu

rre

nt

Ga

in h

FE

0 .03 0.05 0.5 1 5 100.1

100

5030

500

1000

5000

10000(VCE=2V)

125˚C

25˚C

–30˚C


Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD1785

120

120

6

6(Pulse10)

1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD1785

10max

10max

120min

2000min

1.5max

100typ

70typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=2V, IC=3A

IC=2A, IB=3mA

VCE=12V, IE=–0.1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–1.5

IB2(mA)

–3

ton(µs)

0.5typ

tstg(µs)

5.5typ

tf(µs)

1.5typ

IB1(mA)

3

VBB1(V)

10


B

C

E(2.5kΩ)(200Ω)

Equivalentcircuit

138

2SD1796



Pc–Ta Derating

00

1

2

3

4

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=20m

A

0.3mA

1.0mA

0.4mA

0.5mA

0.8mA

0.6mA


410.1 0.50.0550

500

100

1000

10000

20000

5000


DC

Cu

rre

nt

åG

ain

hF

E

(VCE=4V)

–0.01 –0.1 –1 –40

20

40

120

100

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=10V)


Typ

10 503 5 1000.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0.5

1

5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Typ

VCB=10V IE=–2V


0

3

2

1

0.2 0.5 5 101 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=4AIC=3AIC=2A

IC=1A


0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=2V)

0

3

4

2

1 125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)


DC

Cu

rre

nt

åG

ain

hF

E

0 .05 0.5 1 40.1

100

50

500

1000

5000

10000

20000(VCE=4V)

125˚C

25˚C

–30˚C

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2



Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD1796

60±10

60±10

6

4

0.5

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD1796

10max

10max

60±10

2000min

1.5max

60typ

45 typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=50V

VEB=6V

IC=10mA

VCE=4V, IC=3A

IC=3A, IB=10mA

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

1.0typ

tstg(µs)

4.0typ

tf(µs)

1.5typ

IB1(mA)

10

VBB1(V)

10


Built-in Avalanche Diode for Surge AbsorbingDarlington

B

C

E(3kΩ)(150Ω)

Equivalentcircuit

139

Darlington 2SD2014



00

1

2

4

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

I B=20m

A

0.3mA

1.0mA

0.4mA

0.5mA

0.8mA

0.6mA


410.1 0.50.03

50

30

500

100

1000

10000

20000

5000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

10 503 5 1000.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

1ms

0.5

1

5

1 10 100 10005 50 500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Typ


0

3

2

1

0.2 5 101 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=4A2A

1A

3A

300µs


0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

0

3

4

2

1 125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)



DC

Cu

rre

nt

Ga

in h

FE

0 .03 0.5 1 40.1

100

5030

500

1000

5000

10000

20000(VCE=4V)

125˚C

25˚C

–30˚C


–0.02 –0.05 –0.1 –0.5 –1 –40

20

40

120

100

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=10V)


Typ

Pc–Ta Derating

25

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2



Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2014

120

80

6

4

0.5

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2014

10max

10max

80min

2000min

1.5max

2.0max

75typ

45typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=2V, IC=3A

IC=3A, IB=3mA

IC=3A, IB=3mA

VCE=12V, IE=–0.1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

1.0typ

tstg(µs)

4.0typ

tf(µs)

1.5typ

IB1(mA)

10

VBB1(V)

10


B

C

E(3kΩ) (200Ω)

Equivalentcircuit

140

Darlington 2SD2015



Pc–Ta Derating

00

1

2

4

3

21 3 54 6


Co

lle

cto

r C

urr

en

t IC

(A)

I B=1mA

0.3mA

0.4mA

0.5mA

0.8mA

0.6mA


410.1 0.50.0350

500

100

1000

10000

20000

5000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

10 505 2001000.03

0.05

0.1

1

0.5

10

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms 10ms

1ms

0.5

1

5

1 10 100 10005 50 500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Typ


0

3

2

1

0.2 5 101 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=4A

2A1A

3A

300µs


0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

0

3

4

2

1 125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)



DC

Cu

rre

nt

Ga

in h

FE

0 .050.03 0.5 1 40.1

100

50

500

1000

5000

10000

20000(VCE=4V)

125˚C

25˚C

–30˚C


–0.02 –0.05 –0.1 –0.5 –1 –40

10

20

60

50

30

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2




Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2015

150

120

6

4

0.5

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2015

10max

10max

120min

2000min

1.5max

2.0max

40typ

40typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=150V

VEB=6V

IC=10mA

VCE=2V, IC=2A

IC=2A, IB=2mA

IC=2A, IB=2mA

VCE=12V, IE=–0.1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

40

RL(Ω)

20

IC(A)

2

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

0.6typ

tstg(µs)

5.0typ

tf(µs)

2.0typ

IB1(mA)

10

VBB1(V)

10


B

C

E(3kΩ) (500Ω)

Equivalentcircuit

141

Darlington 2SD2016


Pc–Ta Derating

0.03 0.1 10.5 3

5000

10000

1000

500

100

50

10


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)


125˚C

–55˚C

25˚C

0

3

2

1

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)

–55˚

C (

Cas

e T

emp)


00

1

2

3

21 3 4


Co

lle

cto

r C

urr

en

t IC

(A)

3mA

1.5mA

IB=0.3mA

0.5mA

1mA

0

3

2

1

0.2 1 3

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

125˚C

25˚C－55˚C

hFE–IC Temperature Characteristics (Typical)hFE–IC Characteristics (Typical)

0.03 0.1 1 3

100

50

500

1000

10000

5000


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

0.5


0.5

1

5

1 10 100 10005 50 500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


–0.01 –0.1 –1–0.5–0.05 –30

20

40

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

150x150x2

50x50x2

100x100x2



Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2016

200

200

6

3

0.5

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2016

10max

10max

200min

1000to15000

1.5max

2.0max

90typ

40typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=10mA

VCE=4V, IC=1A

IC=1A, IB=1.5mA

IC=1A, IB=1.5mA

VCE=12V, IE=–0.1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


B

C

E(2kΩ) (200Ω)

Equivalentcircuit

142

Darlington 2SD2017




Pc–Ta Derating

35

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2

00

4

2

6

3

1

5

21 3 4 5 6


Co

lle

cto

r C

urr

en

t IC

(A)

40mA

20mA

8mA

4mA

2mA

1mA

IB=0.4mA

0.03 0.1 10.5 65

5000

10000

1000

500

100

3050


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

Typ


0

3

2

1

0.2 0.5 5 101 100 500 100050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1AIC=3A

IC=8A

0

3

4

5

6

2

1

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=2V)

0.03 0.1 10.5 5 6

5000

10000

1000

500

100

5030


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

125˚C

25˚C


–30˚C


0.3

1

5

0.5

1 10 10050 5005 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)


–0.02 –0.05 –0.1 –0.5 –1 –5 –60

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)




Typ


103 5 30010050

0.05

0.02

1

0.1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


10ms

1ms

D.C (TC=25C)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2017

300

250

20

6

1

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2017

100max

10max

250min

2000min

1.5max

2.0max

20typ

65typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=300V

VEB=20V

IC=25mA

VCE=2V, IC=2A

IC=2A, IB=2mA

IC=2A, IB=2mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


VCC(V)

100

RL(Ω)

50

IC(A)

2

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

0.6typ

tstg(µs)

16.0typ

tf(µs)

3.0typ

IB1(mA)

5

VBB1(V)

10


B

(4kΩ )

C

E

Equivalentcircuit

143

Darlington 2SD2045





00

4

2

6

3

1

5

21 3 4 5 6


Co

lle

cto

r C

urr

en

t IC

(A)

20

mA

5mA

2mA

1mA

0.7mA

0.5mA

IB=0.4mA

0.03 0.1 10.5 65

5000

10000

1000

500

100

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

Typ

0

3

2

1

0.1 10510.5 50 100

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

2A

4A

IC=8A

0.2

1

5

0.5

1 10 100 1000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

1m

s10ms

10 5053 100 2000.05

0.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC



0

3

4

5

6

2

1

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=2V)

0.03 0.1 10.5 5 6

5000

10000

1000

500

100

50

Col lector Current IC(A) Time t(ms)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

125˚C

25˚C


–30˚C


–0.05 –0.1 –0.5 –1 –5 –60

80

100

60

40

20

120

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

Pc–Ta Derating

50

40

30

20

10

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)


Without Heatsink

Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Motor and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2045

120

120

6

6(Pulse10)

1

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2045

10max

10max

120min

2000min

1.5max

2.0max

50typ

70typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=2V, IC=3A

IC=3A, IB=3mA

IC=3A, IB=3mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


VCC(V)

30

RL(Ω)

10

IC(A)

3

VBB2(V)

–5

IB2(mA)

–3

ton(µs)

0.5typ

tstg(µs)

5.5typ

tf(µs)

1.5typ

IB1(mA)

3

VBB1(V)

10


B

C

E(2.5kΩ)(200Ω)

Equivalentcircuit

144

Darlington 2SD2081




Pc–Ta Derating

0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

1A

5A

IC=10A


00

5

10

15

21 3 54 6


Co

lle

cto

r C

urr

en

t IC

(A)

1mA

2mA

3mA

5mA

0.7mA

10mA

50m

A

IB=0.5mA

0

10

8

6

4

2

0 2 31


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .03 0.1 10.5 105

5000

20000

10000

1000

500

100

3050


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.03 0.1 10.5 105

5000

20000

10000

1000

500

100

3050


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

–30˚C

25˚C

1ms10ms

10 5053 100 2000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC


0.2

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


–0.05 –0.1 –0.5 –1 –5 –100

80

100

60

40

20

120

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) Application : Driver for Solenoid, Motor and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2081

120

120

6

10(Pulse15)

1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2081

10max

10max

120min

2000min

1.5max

2.0max

60typ

95typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


B

C

E(2kΩ) (200Ω)

Equivalentcircuit

145

Darlington 2SD2082




Pc–Ta Derating

00

10

20

26

2 4 61 3 5


Co

lle

cto

r C

urr

en

t IC

(A)

3mA

6mA

1.5mA

12mA

40

mA

20m

A

IB=1mA


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

4A

8A

IC=16A

0.2 10.5 10 165

5000

30000

10000

1000

500

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

1ms10ms

10 5053 100 2000.030.05

0.1

1

0.5

10

50

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC


0.1

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

100µs

0

16

12

8

4

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)hFE–IC Temperature Characteristics (Typical)

0.02 1 105 16

5000

20000

10000

1000

500

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

–30˚C25˚C

0.5


–0.05 –0.1 –0.5 –1 –5 –10 –160

20

10

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


80

60

40

20

3.50

0 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

Typ


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2082

120

120

6

16(Pulse26)

1

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2082

10max

10max

120min

2000min

1.5max

2.5max

20typ

210typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=10mA

VCE=4V, IC=8A

IC=8A, IB=16mA

IC=8A, IB=16mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


VCC(V)

40

RL(Ω)

5

IC(A)

8

VBB2(V)

–5

IB2(mA)

–16

ton(µs)

0.6typ

tstg(µs)

7.0typ

tf(µs)

1.5typ

IB1(mA)

16

VBB1(V)

10


B

C

E(2kΩ) (100Ω)

Equivalentcircuit

146

Darlington 2SD2083




Pc–Ta Derating

00

20

30

10

40

21 3 54 6


Co

lle

cto

r C

urr

en

t IC

(A)

3mA

5mA

8mA

12mA30mA

20mA

IB=1.5mA


0

3

2

1

10.5 105 50010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

6A

12A

IC=25A

0.2 0.5 1 5 10 40

5000

20000

10000

1000

500

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

–0.5–0.1 –1 –5 –100

50

100

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

0.1

1

3

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

1ms10m

s

10 5053 100 2000.2

1

0.5

10

50

100

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC


120

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0

25

20

10

0 2 2.21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (C

ase

Tem

p)hFE–IC Temperature Characteristics (Typical)

0.02 1 105 40

5000

20000

10000

1000

500

100


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

125˚C

–30˚C

25˚C

0.5


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2083

120

120

6

25(Pulse40)

2

120(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2083

10max

10max

120min

2000min

1.8max

2.5max

20typ

340typ

Unit

µA

mA

V

V

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=25mA

VCE=4V, IC=12A

IC=12A, IB=24mA

IC=12A, IB=24mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


VCC(V)

24

RL(Ω)

2

IC(A)

12

VBB2(V)

–5

IB2(mA)

–24

ton(µs)

1.0typ

tstg(µs)

6.0typ

tf(µs)

1.0typ

IB1(mA)

24

VBB1(V)

10


B

C

E(2kΩ) (100Ω)

Equivalentcircuit

147

2SD2141




Pc–Ta Derating

00

5

10

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)


150mA

IB=1mA

2mA

4mA

18mA20mA

120mA 90mA 60mA

0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r C

urr

en

t IC

(A)

1A

3A5A

IC=7A

0.02 0.1 10.5 105

5000

10000

1000

500

100

10

50


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

Typ

0.1

1

5

0.5

1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

1m

s

10

ms

100ms

501051 100 5000.01

0.05

0.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC


40

30

20

10

20

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

50x50x2

100x100x2

150x150x2


0

10

5

0 2.0 2.41.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)


0.02 0.1 1.0 50.5 10

5000

10000

1000

500

100

50

20


DC

Cu

rre

nt

Ga

in h

FE

(VCE=2V)

125˚C

–55˚C25˚C

fT–IE Characteristics (Typical)(VCE=12V)


0.050.01 01 0.5 1 50

20

10

30

40

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

Typ



Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2141

380±50

380±50

6

6(Pulse10)

1

35(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2141

10max

20max

330to430

1500min

1.5max

20typ

95typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=330V

VEB=6V

IC=25mA

VCE=2V, IC=3A

IC=4A, IB=20mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB


ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab


Built-in Avalanche Diode for Surge AbsorbingDarlington

B

C

E(1.5kΩ)(100Ω)

Equivalent circuit

148

Darlington 2SD2389





00

2

4

6

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

10

mA

2 .5m

A2.0

mA

1.8mA

1.5mA1.3mA

1.0mA

0.8mA

0.5mA

IB=0.3mA

02 0.5 1 5 8


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

5000

10000

40000

Typ

0

8

6

4

2

0 21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

80

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 5053 100 200150

0.05

0.03

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)


DC

100ms

10ms

0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=4A

IC=6A

IC=8A

(VCE=4V)

0.2 0.5 5 81


DC

Cu

rre

nt

Ga

in h

FE

1000

500

5000

10000

50000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –80

20

40

120

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ

0.2

0.5

4

1

1 10 505 100 500 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2389

160

150

5

8

1

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


2SD2389

100max

100max

150min

5000min∗2.5max

3.0max

80typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=30mA

VCE=4V, IC=6A

IC=6A, IB=6mA

IC=6A, IB=6mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


VCC(V)

60

RL(Ω)

10

IC(A)

6

VBB2(V)

–5

IB2(mA)

–6

ton(µs)

0.6typ

tstg(µs)

10.0typ

tf(µs)

0.9typ

IB1(mA)

6

VBB1(V)

10


B

C

E(70Ω )

Equivalent circuit


149


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2390

160

150

5

10

1

100(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2390

100max

100max

150min

5000min∗2.5max

3.0max

55typ

95typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=30mA

VCE=4V, IC=7A

IC=7A, IB=7mA

IC=7A, IB=7mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

Darlington 2SD2390(Ta=25°C) (Ta=25°C)





00

2

4

6

10

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

10

mA

2 .5m

A

2mA1.5mA

1.2mA

0.8mA

1mA

0.6mA

IB=0.4mA

02 0.5 1 5 10


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

5000

10000

40000

Typ

0.1

1

3

0.5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

10

8

2

4

6

0 2 2.51


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

100

50

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10ms

10 5053 100 2000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=7A

IC=10A

(VCE=4V)

0.2 0.5 5 101


DC

Cu

rre

nt

Ga

in h

FE

1000

500

5000

10000

5000070000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


VCC(V)

70

RL(Ω)

10

IC(A)

7

VBB2(V)

–5

IB2(mA)

–7

ton(µs)

0.5typ

tstg(µs)

10.0typ

tf(µs)

1.1typ

IB1(mA)

7

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


B

C

E(70Ω )

Equivalent circuit


150

Darlington 2SD2401





00

2

4

6

12

10

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

10

mA

2 .5mA

1.2mA

1.5mA

1.0mA

2.0mA

0.8mA

0.6mA

IB=0.4mA

02 0.5 1 5 1012


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

5000

10000

40000

Typ

0.1

1

2

0.5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

12

8

10

2

4

6

0 2.621


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10ms

10 5053 100 200150

0.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=7A

IC=10A

(VCE=4V)

0.2 0.5 5 10 121


DC

Cu

rre

nt

Ga

in h

FE

1000

600

5000

10000

5000070000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2401

160

150

5

12

1

150(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2401

100max

100max

150min

5000min∗2.5max

3.0max

55typ

95typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=30mA

VCE=4V, IC=7A

IC=7A, IB=7mA

IC=7A, IB=7mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C) External Dimensions MT-200


VCC(V)

70

RL(Ω)

10

IC(A)

7

VBB2(V)

–5

IB2(mA)

–7

ton(µs)

0.5typ

tstg(µs)

10.0typ

tf(µs)

1.1typ

IB1(mA)

7

VBB1(V)

10

2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C


B

C

E(70Ω )

Equivalent circuit


151


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2438

160

150

5

8

1

75(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2438

100max

100max

150min

5000min∗2.5max

3.0max

80typ

85typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=30mA

VCE=4V, IC=6A

IC=6A, IB=6mA

IC=6A, IB=6mA

VCE=12V, IE=–1A

VCB=10V, f=1MHz






00

2

4

6

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

10

mA

2 .5m

A2.0

mA

1.8mA

1.5mA1.3mA

1.0mA

0.8mA

0.5mA

IB=0.3mA

02 0.5 1 5 8


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

5000

10000

40000

Typ

0.2

1

4

0.5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

8

6

4

2

0 2 2.51


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10ms

10 5053 100 2000.05

0.1

1

0.5

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100ms

0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=4A

IC=6A

IC=8A

(VCE=4V)

0.2 0.5 5 81


DC

Cu

rre

nt

Ga

in h

FE

1000

500

5000

10000

50000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –80

20

40

120

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



VCC(V)

60

RL(Ω)

10

IC(A)

6

VBB2(V)

–2

IB2(mA)

–6

ton(µs)

0.6typ

tstg(µs)

10.0typ

tf(µs)

0.9typ

IB1( mA)

6

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


B

C

E(70Ω )

Equivalent circuit


152

Darlington 2SD2439





00

2

4

6

10

8

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

10

mA

2 .5m

A

2mA1.5mA

1.2mA

0.8mA

1mA

0.6mA

IB=0.4mA

02 0.5 1 5 10


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

5000

10000

40000

Typ

0.1

1

3

0.5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

10

8

2

4

6

0 2 2.51


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

80

60

40

20

3.50

0 50 100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10ms

10 5053 100 2000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC100m

s

0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=7A

IC=10A

(VCE=4V)

0.2 0.5 5 101


DC

Cu

rre

nt

Ga

in h

FE

1000

500

5000

10000

5000070000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

20

40

100

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2439

160

150

5

10

1

80(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2439

100max

100max

150min

5000min∗2.5max

3.0max

55typ

95typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=160V

VEB=5V

IC=30mA

VCE=4V, IC=7A

IC=7A, IB=7mA

IC=7A, IB=7mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)


VCC(V)

70

RL(Ω)

10

IC(A)

7

VBB2(V)

–5

IB2(mA)

–7

ton(µs)

0.5typ

tstg(µs)

10.0typ

tf(µs)

1.1typ

IB1(mA)

7

VBB1(V)

10


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


B

C

E(70Ω )

Equivalent circuit


153

Darlington 2SD2493





00

2

4

6

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

I B=0.1mA

5m

A

1mA

0.5mA 0.4mA

0.3mA

0.2mA

0.02 0.1 0.5 1 65


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

500

200

5000

10000

40000

Typ

0.5

1

5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

6

4

2

0 2.521


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 5053 100 2000.05

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms

10ms

0

3

2

1

0.1 10.5 105 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=3A

(VCE=4V)

0.02 0.1 51 60.5


DC

Cu

rre

nt

Ga

in h

FE

1000

500

100

5000

10000

40000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

40

20

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ


Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2493

110

110

5

6

1

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2493

100max

100max

110min

5000min∗2.5max

3.0max

60typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)


VCC(V)

30

RL(Ω)

6

IC(A)

5

VBB2(V)

–5

IB2(mA)

–5

ton(µs)

0.8typ

tstg(µs)

6.2typ

tf(µs)

1.1typ

IB1(mA)

5

VBB1(V)

10


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


B

C

E(70Ω )

Equivalent circuit


154


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2494

110

110

5

6

1

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2494

100max

100max

110min

5000min∗2.5max

3.0max

60typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz






00

2

4

6

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

I B=0.1mA

5m

A

1mA

0.5mA 0.4mA

0.3mA

0.2mA

0.02 0.1 0.5 1 65


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

500

200

5000

10000

40000

Typ

0.5

1

5

1 10 100 10005 50 500 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

6

4

2

0 2.521


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

60

40

20

3.5

00 5025 75 125100 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10 5053 100 2000.05

1

0.5

0.1

10

20

5


Co

lle

cto

r C

urr

en

t IC

(A) DC

100ms

10ms

0

3

2

1

0.1 10.5 105 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=3A

(VCE=4V)

0.02 0.1 51 60.5


DC

Cu

rre

nt

Ga

in h

FE

1000

500

100

5000

10000

40000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

40

20

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



VCC(V)

30

RL(Ω)

6

IC(A)

5

VBB2(V)

–5

IB2(mA)

–5

ton(µs)

0.8typ

tstg(µs)

6.2typ

tf(µs)

1.1typ

IB1(mA)

5

VBB1(V)

10

B

C

E(70Ω )

Equivalent circuit


155

Darlington 2SD2495





00

2

4

6

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

I B=0.1mA

5m

A

1mA

0.5mA 0.4mA

0.3mA

0.2mA

0.02 0.1 0.5 1 65


DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

1000

500

200

5000

10000

40000

Typ

0.5

0.3

1

4

1 10 100 10005 50 500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

0

6

4

2

0 2.521


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

30

20

10

2

00 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

10ms

10 5053 100 2000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

DC

100ms

0

3

2

1

0.1 10.5 105 10050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=5A

IC=3A

(VCE=4V)

0.02 0.1 51 60.5


DC

Cu

rre

nt

Ga

in h

FE

1000

500

100

5000

10000

40000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –60

40

20

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Typ



Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2495

110

110

5

6

1

30(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2495

100max

100max

110min

5000min∗2.5max

3.0max

60typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab



VCC(V)

30

RL(Ω)

6

IC(A)

5

VBB2(V)

–5

IB2(mA)

–5

ton(µs)

0.8typ

tstg(µs)

6.2typ

tf(µs)

1.1typ

IB1(mA)

5

VBB1(V)

10

B

C

E(70Ω )

Equivalent circuit


156

Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2557

200

200

6

5

2

70(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SD2557

100max

5max

200min

1500to6500

1.5max

15typ

110typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=10mA

VCE=5V, IC=1A

IC=1A, IB=5mA

VCE=10V, IE=–0.5A

VCB=10V, f=1MHz






0

5

4

2

1

3

0 2.521


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

10ms50ms

1ms

10 505 100 3000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

100ms

(VCE=5V)

0.02 0.1 510.5


DC

Cu

rre

nt

Ga

in h

FE

1000

500

510

100

50

50008000

Pc–Ta Derating

70

60

50

40

30

20

10

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

125˚C

25˚C

–30˚C


0.3

0.5

5.0

1.0

1 105 10050 20001000500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

00

1

2

4

3

5

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

I B=

1.0

A

250mA

50mA

10mA

2.5mA

1.2mA

0.6mA

0.3mA


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b


B

C

E(3.2kΩ)(450Ω)

Equivalent circuit

157

Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2558

200

200

6

5

2

60(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SD2558

100max

5max

200min

1500to6500

1.5max

15typ

110typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=10mA

VCE=5V, IC=1A

IC=1A, IB=5mA

VCE=10V, IE=–0.5A

VCB=10V, f=1MHz





60

40

20

3.50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


0

5

4

2

1

3

0 2.521


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

1ms

10 505 100 3000.05

0.1

1

0.5

10

30

5


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=5V)

0.02 0.1 510.5


DC

Cu

rre

nt

Ga

in h

FE

1000

500

510

100

50

50008000

Pc–Ta Derating

125˚C

25˚C

–30˚C


0.3

0.5

5.0

1.0

1 105 10050 20001000500

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

00

1

2

4

3

5

2 64


Co

lle

cto

r C

urr

en

t IC

(A)

I B=

1.0

A

250mA

50mA

10mA

2.5mA

1.2mA

0.6mA

0.3mA

B

C

E(70Ω )

Equivalent circuit


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab


158


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2560

150

150

5

15

1

130(Tc=25°C)

150

–55to+150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2560

100max

100max

150min

5000min∗2.5max

3.0max

70typ

120typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=30mA

VCE=4V, IC=10A

IC=10A, IB=10mA

IC=10A, IB=10mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz




00

10

5

15

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

50

mA

IB=0.3mA

0.5mA

0.8mA

2mA

1.0mA

3mA10mA

1.5mA


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=.15A

IC=.10A

IC=.5A


0

15

5

10

0 2 2.21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)



02 0.5 1 10 155

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

02 0.5 1 10 155

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)



125˚C

–30˚C

25˚C


0.1

1.0

3.0

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



–0.05–0.02 –01 –0.5 –1 –5 –100

40

20

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

Pc–Ta Derating

130

100

50

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150


15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b



VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

0.8typ

tstg(µs)

4.0typ

tf(µs)

1.2typ

IB1(mA)

10

VBB1(V)

10

B

C

E(70Ω )

Equivalent circuit


159


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2561

150

150

5

17

1

200(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2561

100max

100max

150min

5000min∗2.5max

3.0max

70typ

120typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=30mA

VCE=4V, IC=10A

IC=10A, IB=10mA

IC=10A, IB=10mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz




00

10

5

15

17

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

50

mA

I B=0.3mA

0.5mA

0.8mA

2mA

1.0mA

10mA

1.5mA

3mA


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=.15A

IC=.10A

IC=.5A


0

15

17

5

10

0 2 2.61


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)



02 0.5 1 10 175

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

02 0.5 1 10 175

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)



125˚C

–30˚C

25˚C

Time t(ms)

0.1

1

2

0.5

1 10 100 1000 2000

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W



–0.02 –0.1 –1 –100

20

40

80

60

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)


Pc–Ta Derating

200

160

120

80

40

50

0 25 50 75 100 125 150


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink


2

3

1.05+0.2-0.1

B E

5.45±0.1 5.45±0.1

2-ø3.2±0.1

36.4±0.3

9

24.4±0.2

7

21.4

±0.

320

.0m

in

4.0m

ax

0.65+0.2-0.1

3.0 +0.3-0.1

6.0±0.2

2.1

a

b

C



VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

0.8typ

tstg(µs)

4.0typ

tf(µs)

1.2typ

IB1(mA)

10

VBB1(V)

10

B

C

E(70Ω )

Equivalent circuit


160


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2562

150

150

5

15

1

85(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2562

100max

100max

150min

5000min∗2.5max

3.0max

70typ

120typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=30mA

VCE=4V, IC=10A

IC=10A, IB=10mA

IC=10A, IB=10mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz




00

10

5

15

2 4 6


Co

lle

cto

r C

urr

en

t IC

(A)

50

mA

IB=0.3mA

0.5mA

0.8mA

2mA

1.0mA

3mA10mA

1.5mA


0

3

2

1

0.2 10.5 105 20010050

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=.15A

IC=.10A

IC=.5A


0

15

5

10

0 2 2.21


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)



02 0.5 1 10 155

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

02 0.5 1 10 155

50000

1000

5000

10000

500

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)



125˚C

–30˚C

25˚C


0.1

1.0

3.0

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)



–0.05–0.02 –01 –0.5 –1 –5 –100

40

20

60

80

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

Pc–Ta Derating

100

80

60

40

20

3.50


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Without Heatsink

0 25 50 75 100 125 150


4.41.5 1.5

B EC

5.45±0.1

ø3.3±0.2

1.6

3.3

1.75

0.8±

0.2

2.15

1.05+0.2-0.1

5.45±0.1

23.0

±0.

316

.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45

3.350.65+0.2-0.1

±0.2

3.0

0.8

ab



VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(mA)

–10

ton(µs)

0.8typ

tstg(µs)

4.0typ

tf(µs)

1.2typ

IB1(mA)

10

VBB1(V)

10

B

C

E(70Ω )

Equivalent circuit


161


Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2589

110

110

5

6

1

50(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2589

100max

100max

110min

5000min∗2.5max

3.0max

60typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

Darlington 2SD2589(Ta=25°C) (Ta=25°C) External Dimensions FM-25(TO220)

B E2.5 2.5

C

16.0

±0.

712

.0m

in

4.0m

ax8.

8±0.

2

1.35

0.65+0.2-0.1

10.2±0.2

ø3.75±0.2

3.0±

0.2 4.8±0.2

1.4

2.0±0.1

a

b



VCC(V)

30

RL(Ω)

6

IC(A)

5

VBB2(V)

–5

IB2(mA)

–5

ton(µs)

0.8typ

tstg(µs)

6.2typ

tf(µs)

1.1typ

IB1(mA)

5

VBB1(V)

10


00

2

4

6

2 64

IB=0.1mA

5m

A

1mA

0.5mA 0.4mA

0.3mA

0.2mA

0.02 0.1 0.5 1 65

(VCE=4V)

1000

500

200

5000

10000

40000

Typ

0

6

4

2

0 2.521

(VCE=4V)

0

3

2

1

0.1 10.5 105 10050

IC=5A

IC=3A

(VCE=4V)

0.02 0.1 51 60.5

1000

500

100

5000

10000

40000

125˚C

25˚C

–0.02 –0.1 –1 –60

40

20

80

60

(VCE=12V)

Typ

0.4

1

5

0.5

1 10 100 1000 2000

50

40

30

20

10

20

0 25 50 75 100 125 150

IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical)

Col lector-Emit ter Vol tage VCE(V) Base Current IB(mA) Base-Emit tor Vol tage VBE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

Co

lle

cto

r C

urr

en

t I C

(A)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)


Col lector Current IC(A) Col lector Current IC(A) Time t(ms)

DC

Cu

rre

nt

Ga

in h

FE

DC

Cu

rre

nt

Ga

in h

FE

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical) Pc–Ta Derating

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)


Emit ter Current IE(A) Ambient Temperature Ta(˚C)

Without Heatsink

–30˚C

162

Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode Application : Chopper Regulator

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

SAH02

–30

–30

–10

–3

–0.5

800(Ta=25°C)

125

–40 to +125

Unit

V

V

V

A

A

mW

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE1

hFE2

VCE(sat)

fT

COB

SAH02

–10max

–10max

–30min

100min

150min

–0.3max

100typ

45typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=–30V

VEB=–10V

IC=–10mA

VCE=–2V, IC=–1A

VCE=–2V, IC=–0.5A

IC=–0.5A, IB=–20mA

VCE=–12V, IE=0.3A

VCB=–10V, f=1MHz

SAH02(Ta=25°C) (Ta=25°C)


hFE–IC Temperature Characteristics (Typical) θ j -a–t Characteristics


Pc–Ta Derating

00

–1

–2

–3

–1 –2 –3 –6–4 –5


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–3mA

–100mA –20mA

–10mA

–15mA

–5mA

–5mA


–3 –10–5 –50–0.03

–0.1

–0.05

–1

–5

–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

1ms10m

s


0.3

100

300

10

1

0.001 0.01 0.1 1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

1 .0

0.5

00 25 50 75 100 125


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

G lass epoxy substrate (95 x 69 x 1.2mm)Natural Cool ing

0

–3

–1

–2

0 –1.5–0.5 –1.0


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–2V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

Diode IF–VF Characteristics

0

3

1

2

0 1.00.5

Forward Vol tage VF(V)

Fo

rwa

rd C

urr

en

t IF

(A)

(VCE=–2V)

–0.01 –0.05 –0.1 –0.5 –1 –3100

500

1000


DC

Cu

rre

nt

Ga

in h

FE

125˚C

–30˚C

25˚C

125˚C

–30˚

C

25˚C

–0.1 –1–0.5 –3

1.0

0.8

0.6

0.4

0.2

0

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 12V–IB1=IB2=30mA


VCE(sat)–IB Temperature Characteristics (Typical)

0

–1.0

–1.5

–0.5

–300–10 –100–50–5–1

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

125˚C

25˚C

–30˚C

(IC=–0.5A)

100µs

External Dimensions PS Pack

2.54

±0.

25

1.4±0.2

3.6±0.2

6.3±0.2

8.0±0.5

1.0±0.3

3.0±0.2

9.8±0.3

0~0.1

0.25

4.32

±0.

2

0.89

±0.

15

4.8m

ax

6.8max4.0max

a b 1

23

4

0.75

+0

.15

-0.0

5

0.3

+0

.15

-0.0

5

2

1 3

4

Equivalent circuit

VR IR=100µA 30 min V

VF IF=0.5A 0.55 max V

t r r IF=±100mA 15 typ ns


163

SAH032

1 3

4

(4kΩ )

(100Ω )

Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

SAH03

–60

–60

–6

–1.2

–0.1

1.0(Ta=25°C)

150

–40to+150

Unit

V

V

V

A

A

W

°C

°C


Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

SAH03

–10max

–3max

–60min

2000to12000

–1.4max

100typ

30typ

Unit

µA

mA

V

V

MHz

pF

Conditions

VCB=–60V

VEB=–6V

IC=–10mA

VCE=–4V, IC=–1A

IC=–1A, IB=–2mA

VCE=–12V, IE=0.1A

VCB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Equivalentcircuit

VR IR=100µA 100 min V

VF IF=0.5A 1.5 max V

t r r IF=±100mA 100 typ ns

External Dimensions PS Pack

2.54

±0.

25

1.4±0.2

3.6±0.2

6.3±0.2

8.0±0.5

1.0±0.3

3.0±0.2

9.8±0.3

0~0.1

0.25

4.32

±0.

2

0.89

±0.

15

4.8m

ax

6.8max4.0max

a b 1

23

4

0.75

+0

.15

-0.0

5

0.3

+0

.15

-0.0

5



hFE–IC Temperature Characteristics (Typical) θ j -a–t Characteristics

IC–VBE Temperature Characteristics (Typica

Pc–Ta Derating

00

–1

–2

–2.4

–1 –2 –3 –6–4 –5


Co

lle

cto

r C

urr

en

t IC

(A)

I B=–0.3mA

–1.2mA

–0.4mA

–0.5mA

–0.6mA

–0.8mA

–1.0mA


–1 –10–5 –100–50–0.05

–0.1

–1

–3

–0.5


Co

lle

cto

r C

urr

en

t IC

(A)

0 .3

100

300

10

1

0.001 0.01 0.1 1 10 100 1000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

1 .5

0.5

1.0

00 25 50 75 100 150125


Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

0

–2.4

–1

–2

0 –3–1 –2


Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=–4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

Diode IF–VF Characteristics

0.01

1.21

0.1

0.05

0.5

0 1 1.6

Forward Vol tage VF(V)

Fo

rwa

rd C

urr

en

t IF

(A)

(VCE=–4V)

–0.02 –0.05 –0.1 –0.5 –1 –2.450

100

1000

5000

500

10000


DC

Cu

rre

nt

Ga

in h

FE

125˚C

–30˚C

25˚C

12

5˚C

–1

0˚C

25

˚C

–0.2 –1–0.5 –2.40.1

1

2

0.5

Sw

itc

hin

g T

ime

to

n•t

stg

•tf(

µs

)


tstg

ton

t f

VCC 30V–IB1=IB2=2mA


0

–2

–3

–1

–5–1–0.5–0.1

Base Current IB(mA)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

125˚C

–30˚C

(IC=–0.5A)

Glass epoxy substrate (95 x 69 x 1.2mm)Natural Cool ing

–5.0mA–2.0mA–10.0mA


1m

s100µs

10ms

25˚C

VCE(sat)–IB Temperature Characteristics (Typical)

Application : Voltage change switch for motor

164

Discontinued Parts Guide

Repair Parts Replacement Parts

2SA768to769 2SA1262,1488,1488A

2SA770to771 2SA1725,1726

2SA957to958 2SA1667,1668

2SA1489 2SA1693

2SA1490 2SA1694

2SA1491 2SA1695

2SA1643 2SA1725

2SA1670 2SA1907

2SA1671 2SA1908

2SA1672 2SA1909

2SC1826to1827 2SC3179,3851,3851A

2SC1983to1984 2SC3852,3852A

2SC1985to1986 2SC4511,4512

2SC2167to2168 2SC4381,4382

2SC2315to2316 2SC4558

2SC2810 2SC3890

2SC3300 2SC4131

2SC3853 2SC4466

2SC3854 2SC4467

2SC3855 2SC4468

2SC4385 2SC5099

2SC4386 2SC5100

2SC4387 2SC5101

2SC4503 2SD2083

2SC4558 2SD2495

2SC4820 2SC4518

Discontinued Parts Replacement Parts

2SA744to745 2SA1694to1695

2SA746to747 2SA1695

2SA764to765 2SA1725to1726

2SA807to808 2SA1693to1694

2SA878 –

2SA892 2SB1351

2SA907to909 2SA1215to1216,1295

2SA971 –

2SA980to982 2SA1694

2SA1067 –

2SA1068 –

2SA1102 2SA1693

2SA1103 2SA1694

2SA1104 2SA1694

2SA1105 2SA1695

2SA1106 2SA1695

2SA1116 2SA1493

2SA1117 2SA1494

2SA1135 2SA1693

2SA1169 2SA1493

2SA1170 2SA1494

2SA1187 –

2SA1205 2SA1746

2SA1355 2SA1262,1488

2SB622 –

2SB711to712 2SB1259,1351

2SB1005 2SB1257

2SB1476 2SB1624

2SB1586 2SB1625

2SC1107 2SC3179,3851

2SC1108 2SC3851A

2SC1109 2SC3179,3851

2SC1110 2SC3851A

2SC1111to1112 2SC4467to4468

2SC1113 2SC4511to4512

2SC1114 –

2SC1115to1116 2SC4468

2SC1402to1403 2SC4467to4468

2SC1436 –

2SC1437 –

2SC1440to1441 –

2SC1442to1443 –

2SC1444to1445 2SC4511to4512

2SC1454 –

2SC1477 –

2SC1504 2SC2023

2SC1577to1578 2SC3833,3831

2SC1579to1580 2SC4706

2SC1584to1585 2SC2921-2922,3264

2SC1618to1619 2SC4466-4467

2SC1629 2SD2045

2SC1664 2SC4558

2SC1768 –

2SC1777 –

2SC1783 –

2SC1786 –

2SC1828 2SC3832,3830


2SC1829 –

2SC1830 2SD2082,2083

2SC1831 –

2SC1832 –

2SC1888to1889 2SC3852,3852A

2SC2022 2SC2023

2SC2147 –

2SC2198 2SC4024

2SC2199 2SC4131

2SC2256 –

2SC2260to2262 2SC4467

2SC2302 2SC3832

2SC2303 2SC3833

2SC2304 2SC3833

2SC2305 –

2SC2306 2SC4140

2SC2307 2SC3833

2SC2317 2SD2016

2SC2354 2SC2023

2SC2364 –

2SC2365 2SC3831

2SC2491 2SC4024

2SC2492 –

2SC2493 –

2SC2577 2SC4466

2SC2578 2SC4467

2SC2579 2SC4467

2SC2580 2SC4468

2SC2581 2SC4468

2SC2607 2SC3857

2SC2608 2SC3858

2SC2665 2SC4466

2SC2723 2SC4140

2SC2761 –

2SC2773 2SC3857

2SC2774 2SC3858

2SC2809 –

2SC2810A 2SC4820

2SC2825 2SD2045

2SC2838 –

2SC2900 –

2SC3409 2SC3679

2SC3520 2SC4140

2SC3706 –

2SC3909 2SC3680

2SC4023 2SC5124

2SC4199,4199A 2SC5124

2SC4302 2SC4301

2SC4303,4303A 2SC5002

2SC4494 2SC4495

2SC4756 2SC5002

2SD15to18 2SC4468

2SD80to84 2SC4466,4467

2SD90to94 2SC3179,3851,3851A

2SD163to166 2SC4468

2SD201to203 2SC4466to4467

2SD211to214 2SC4468


2SD219to221 2SC3179,3851,3851A

2SD219Fto221F 2SC3179,3851,3851A

2SD222to224 2SC3179,3851,3851A

2SD236to238 2SC3179,3851,3851A

2SD241to244 2SC3179,3851,3851A

2SD256to259 2SC3179,3851,3851A

2SD419to421 2SD1769,1785

2SD556to557 2SC4468

2SD593to594 2SC4020

2SD605 –

2SD606 –

2SD614to615 2SD1769,1785

2SD617 2SD2082

2SD721 2SD2081

2SD722 2SD2081

2SD807 2SC3679

2SD810 2SC4024

2SD971 –

2SD972 2SD1796

2SD1031 2SD1769,1785

2SD1170 2SD2045

2SD1532 2SD2015

2SD2231 2SD2493

2SD2437 2SD2494

Date post:	17-Apr-2018
Category:	Documents
Upload:	nguyennhi
View:	220 times
Download:	0 times

CAUTION/WARNING - MaxdatLetoltesek/Hejetesito Tablazatok/SanKen... · CAUTION/WARNING The...

Documents