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Design Metrics
EE141EE141-- Spring 2004Spring 2004Lecture 3Lecture 3
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Last LecturesLast Lectures
Moore’s lawChallenges in digital IC design in the next decade.Manufacturing process
TodayDesign metrics
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AdministriviaAdministrivia
If you have not signed-in on the class roster, please do so after the lecture.Problems?
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Design MetricsDesign Metrics
How to evaluate performance of a digital circuit (gate, block, …)?
CostReliabilityScalabilitySpeed (delay, operating frequency) Power dissipationEnergy to perform a function
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Cost of Integrated CircuitsCost of Integrated Circuits
NRE (non-recurrent engineering) costsdesign time and effort, mask generationone-time cost factor
Recurrent costssilicon processing, packaging, testproportional to volumeproportional to chip area
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NRE Cost is IncreasingNRE Cost is Increasing
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Die CostDie Cost
Single die
Wafer
From http://www.amd.com
Going up to 12” (30cm)
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G. Moore, ISSCC 2003
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Cost per TransistorCost per Transistor
0.00000010.0000001
0.0000010.000001
0.000010.00001
0.00010.0001
0.0010.001
0.010.01
0.10.111
19821982 19851985 19881988 19911991 19941994 19971997 20002000 20032003 20062006 20092009 20122012
cost: cost: ¢¢--perper--transistortransistor
Fabrication capital cost per transistor (Moore’s law)
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YieldYield
%100per wafer chips ofnumber Total
per wafer chips good of No. ×=Y
yield Dieper wafer Dies
costWafer cost Die
×=
( )area die2
diameterwafer
area die
diameter/2wafer per wafer Dies
2
××π−×π=
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DefectsDefects
α−⎟⎠⎞
⎜⎝⎛
α×+= area dieareaunit per defects
1yield die
α is approximately 3
4area) (die cost die f=
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Some Examples (1994)Some Examples (1994)
$4179%402961.5$15000.803Pentium
$27213%482561.6$17000.703Super Sparc
$14919%532341.2$15000.703DEC Alpha
$7327%661961.0$13000.803HP PA 7100
$5328%1151211.3$17000.804Power PC 601
$1254%181811.0$12000.803486 DX2
$471%360431.0$9000.902386DX
Die cost
YieldDies/wafer
Area mm2
Def./ cm2
Wafer cost
Line width
Metal layers
Chip
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ReliabilityReliability――Noise in Digital Integrated CircuitsNoise in Digital Integrated Circuits
i(t)
Inductive coupling Capacitive coupling Power and groundnoise
v(t) VDD
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DC OperationDC OperationVoltage Transfer CharacteristicVoltage Transfer Characteristic
V(x)
V(y)
VOH
VOL
VM
VOHVOL
fV(y)=V(x)
Switching Threshold
Nominal Voltage Levels
VOH = f(VOL)VOL = f(VOH)VM = f(VM)
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Mapping between analog and digital signalsMapping between analog and digital signals
VIL
VIH
Vin
Slope = -1
Slope = -1
V OL
V OH
Vout
“ 0” VOL
VIL
VIH
VOH
UndefinedRegion
“ 1”
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Definition of Noise MarginsDefinition of Noise Margins
Noise margin high
Noise margin low
VIH
VIL
UndefinedRegion
"1"
"0"
VOH
VOL
NMH
NML
Gate Output Gate Input
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Noise BudgetNoise Budget
Allocates gross noise margin to expected sources of noiseSources: supply noise, cross talk, interference, offsetDifferentiate between fixed and proportional noise sources
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Key Reliability PropertiesKey Reliability Properties
Absolute noise margin values are deceptivea floating node is more easily disturbed than a node driven by a low impedance (in terms of voltage)
Noise immunity is the more important metric –the capability to suppress noise sourcesKey metrics: Noise transfer functions, Output
impedance of the driver and input impedance of the receiver;
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Regenerative PropertyRegenerative Property
v0
v1
v3
finv(v)
f(v)
v3
out
v2 in
Regenerative Non-Regenerativev2
v1
f(v)
finv(v)
v3
out
v0 in
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Regenerative PropertyRegenerative Property
A chain of inverters
v0 v1 v2 v3 v4 v5 v6
2
V (
Vol
t)
4
v0
v1v2
t (nsec)0
�1
1
3
5
6 8 10Simulated response
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FanFan--in and Fanin and Fan--outout
N
Fan-out N Fan-in M
M
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The Ideal GateThe Ideal Gate
Ri = ∞Ro = 0Fanout = ∞NMH = NML = VDD/2g = ∞
V in
V out
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An OldAn Old--time Invertertime Inverter
NMH
Vin (V)
V
o ut
(V )
NML
VM
0.0
1.0
2.0
3.0
4.0
5.0
1.0 2.0 3.0 4.0 5.0
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Delay DefinitionsDelay Definitions
Vout
tf
tpHL tpLH
tr
t
Vin
t
90%
10%
50%
50%
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Ring OscillatorRing Oscillator
v0 v1 v5
v1 v2v0 v3 v4 v5
T = 2 × tp × N
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A FirstA First--Order RC NetworkOrder RC Network
vout
vin C
R
tp = ln (2) τ = 0.69 RC
Important model – matches delay of inverter
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Power DissipationPower Dissipation
Instantaneous power: p(t) = v(t)i(t) = Vsupplyi(t)
Peak power: Ppeak = Vsupplyipeak
Average power:
( )∫ ∫+ +
==Tt
t
Tt
t supplysupply
ave dttiT
Vdttp
TP )(
1
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Energy and EnergyEnergy and Energy--DelayDelay
Power-Delay Product (PDP) =
E = Energy per operation = Pav × tp
Energy-Delay Product (EDP) =
quality metric of gate = E × tp
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A FirstA First--Order RC NetworkOrder RC Network
E0 1→ P t( )dt
0
T
∫ Vdd isupply t( )dt
0
T
∫ Vdd CLdVout0
Vdd
∫ CL Vdd• 2= = = =
Ecap Pcap t( )dt
0
T
∫ Vouticap t( )dt
0
T
∫ CLVoutdVout0
Vdd
∫12---C
LVdd• 2= = = =
vout
vin CL
R
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Next LectureNext Lecture
A First Glance at an Inverter