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Electro Static Discharge in Silicon IC Technologies ESD BY : Damodar B. Charate
Transcript

Electro Static Dischargein Silicon IC Technologies

ESD

BY : Damodar B. Charate

Outline

Background to ESD Static Charge Build-up ESD Failures ESD Models ESD Protection

ELECTROSTATIC DISCHARGE (ESD)

Electrostatic Discharge? Sudden discharge of a charged body

Importance of ESD to the Semiconductor Industry Unexpected destruction of semiconductor

devices Losses can occur anywhere from fabrication to

field Millions of $ in real and hidden losses each year

ELECTROSTATIC DISCHARGE (ESD)

Electrostatic Discharge (ESD) :The transfer of electrostatic charge between bodies or surfaces at different electrostatic potential. ESD is a subset of EOS

Electrical Overstress (EOS): The exposure of an object to a current or voltage beyond its maximum ratings

Static Charge Build-Up

Charge - Separation Materials Make Intimate Contact

TRIBOELECTRIC SERIES

POSITIVE (+)Human HandsRabbit FurGlass (Quartz)MicaHuman HairNylonWoolFurLeadSilkAluminumPaperCottonSteelWoodAmberSealing WaxHard RubberNickel, Copper

Brass, SilverGold, PlatinumSulfurAcetate RayonPolyesterCelluloidOrlonPolyurethanePolyethylenePolypropylenePVCKEL FSiliconTeflonNEGATIVE (-)

ESD Failure

ESD DAMAGE TO ICs

Any point from manufacture to field service Handling the devices in uncontrolled

surroundings Poor ESD control practices used Types of Failure:

Catastrophic failure Latent failure

What Causes Electronic Devices to Fail?

Discharge to the Device Discharge from the Device Field Induced Discharges

What Fails?

Oxide breakdown of the transistor gates (CDM)

Thermal in nature to the transistor junctions (MM and HBM)

Metallization and Poly-silicon Burn-out Hot-carrier injection

Oxide breakdown

Gate oxide damage in MOS transistor after the CDM stress

Junction Breakdown

Drain junction filamentation in MOS transistor due to the ESD stress

Metallization and Poly-silicon Burn-out

Interconnects damage due to the ESD stress

Hot-carrier injection

Mechanism of charge injection in gate oxide region under ESD stress

ESD Model

ESD Model

Human Body Model or HBM Human handling of the chips)

Machine Model or MM Robotic handling in assemblies

Charged Device Model or CDM Charge from the package itself

HBM

MM

CDM

ESD Waveform

ESD Protection

ESD PROTECTION IS ONLY AS STRONG AS THE WEAKEST LINK!

ON Chip ESD Protection

Full Chip ESD Protection

• ESD protection between power• Protection circuits for I/O pins

ESD Testing

Zapping modes: (a) PS-mode (b) NS-mode (c) PD-mode (d) ND-mode

How to Protect an IO IN ESD Event

ESD protection required for a typical IO PAD

ESD Protection on a IO PAD

How it works???

PAD to VDD (PD)

VSS to PAD (NS)

PAD to VSS (PS)

VDD to PAD (ND)

ESD Between IOs

RC Triggered Clamp

Snap Back Clamp

Grounded Gate NMOS in Snap Back Mode

Snap Based ESD Protection

Snap Based ESD Protection

A typical Input Signal PAD

IO DEVICE

LV LOCALCLAMP

LV LOCALCLAMP

CORE SIDEPAD

RBUS RBUSRBUS

RBUS

RBUS RBUS RBUS

VDDO (RAIL)

VSSO (RAIL)

P

S

ESD Paths Between Diff Power

HV CLAMP

LV CLAMP

VDD VDDO3V3 VSSO

VSS

VDD

VDDO3V3

LV CLAMP

VDD VSSO

VSS

VDD

VDDO2V5

VSS

2.5V domain 3.3V domain

HV CLAMP

VDDO2V5

Back to Back Diodes

ESD protection in a bidirectional I/O circuit.

Full Chip Wire Bond

DDRLVTTL

LVDS

LVTTL

DD

RLV

DS

LVTT

LLV

DS

VDD

PAD

VSS

PAD

VDD

O P

AD

VSSO

PAD

VDD

PAD

VSS

PAD

VDD

O P

AD

VSSO

PAD

VSSO BUS

VDDO BUS (2.5V)

VSS BUS

VDD BUS

VDDO BUS (3.3V)

S1 S2 S3 S4 S5 S6

A typical CMOS buffer stage (a) schematic (b) cross section

A typical CMOS Receiver (a) schematic (b) cross section

Layout Issues


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