FINAL PROGRAM7 FINAL PROGRAM CoolSiC for industrial applications Meeting the expectations of modern...

SEPTEMBER 13 – 18, 2020VIRTUAL CONFERENCE

FINAL PROGRAM

2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS

(ISPSD)

TECHNICALLY CO-SPONSORED BY

SEPTEMBER 13 – 18, 2020 | VIRTUAL CONFERENCE

2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)

2FINAL PROGRAM www.ispsd2020.com

TABLE OF CONTENTS

CHAIRMAN’S MESSAGE 3

CONFERENCE INFORMATION 8

VIRTUAL EXHIBITION 8

ISPSD HALL OF FAME 9

AWARDS ISPSD 2019 11

ANNOUNCEMENT ISPSD 2021 15

SCHEDULE AT A GLANCE 16

SHORT COURSE 18

SESSION DETAILS 19

CONFERENCE COMMITTEES 34

ACKNOWLEDGEMENTS 39




CHAIRMAN’S MESSAGE

DEAR COLLEAGUES,On behalf of the ISPSD conference organizing committee, it is my great honor and pleasure to welcome you to the 32nd IEEE International Symposium on Power Semiconductor Devices and ICs. ISPSD brings together the world’s foremost experts and leading companies on power semiconductor devices and integrated circuit technology. Since the first meeting held in Tokyo in 1988, ISPSD has become the premier international forum for technical discussions on all aspects of power semiconductor devices and integrated circuits with an annual attendance of about 500 engineers, scientists and students. The conference location is rotating each year among Japan, North America, Europe and Other Areas.

In 2020 the conference is returning to Europe, namely into one of its cultural centers, Vienna, the capital of Austria. The intended venue was Hofburg, the former principal imperial palace of the Habsburg dynasty rulers and today the official residence and workplace of the Federal President of the Republic of Austria.

But: As you all know many plans for 2020 have become obsolete by the appearance of the Covid-19 pandemic. We all have been impacted by it one way or another, so I hope that all of you have been able to manage the crisis well so far and I wish the best for your families and beloved ones.

I know that all of you were looking forward to meeting friends and colleagues in person for an intense week of sharing latest news and ideas in a great city and historic surrounding. However, although many countries had recovered already pretty well, there are still many others with even increasing numbers of Corona cases at the time of this writing and we did not want to put your health at risk by gathering an international audience for a multi-day event facing a potential second wave. For those reasons we decided with a heavy heart but fully supported by the Advisory Board of the ISPSD to go for a pure virtual conference, a first time in the history of ISPSD.

The technical program of this year’s conference has been selected out of an all-time high of 339 submitted abstracts (332 regular and 7 late news). The submissions originated from 29 different countries with 28% of the papers coming from Europe, 45% from Other Areas (mostly Asia/Pacific excl. Japan), 14% from Japan and 12% from North America, underlining the truly global character of the conference and the power semiconductor community. The top 5 countries leading in number of submissions were China with 102 abstracts, Japan with 49, United States with 36, Germany with 31 and Taiwan with 17. Topically, we see a strong growth in the SiC technology & device track with an all-time high of 94 abstracts and in the module & package technology track with numbers doubling to 41 abstracts. The number of abstracts submitted to the other tracks remained nearly constant.

The ISPSD2020 Technical Program Committee has selected 4 plenary talks and 138 regular papers for inclusion in this year’s conference: 44 lectures (thereof 3 late news) and 94 posters. With an acceptance rate of 13% for lectures and 41% overall, the conference continues to stand out as a top-quality event in semiconductors and unrivaled champion in the power semiconductor device domain.

The new virtual conference format will combine daily live streams, exhibitions and Q&A sessions during short and manageable time slots to facilitate real time exchange with and within the international expert audience. To manage the high number of papers the conference was extended to five days with two parallel tracks including a poster day with three sessions also running in two tracks. Later on-demand access to the presentations will be given for those who could not join live or want to listen to a missed parallel session.

The technical program also includes 3 outstanding plenary speakers from industry and academia, representing each of the conference regions. Yoshimasa Sato (Toshiba Energy Systems & Solutions Corporation) will talk about the new Hokkaido to Honshu HVDC power transmission line, which is based on a novel modular multilevel power converter topology. Patrick Leteinturier (Infineon) will highlight the challenges of a future green mobility including the energy infrastructure and how power semiconductors play a key role here. Finally, Sameer Pendharkar (Texas Instruments) will talk about the trends and performance improvements in silicon and GaN based power discrete and mixed signal power IC technologies and their optimization for an overall optimum performance in industrial and automotive electronics.




The conference will also offer an exciting and educative Short Course on Sunday, September 13th. The short course is built around high-performance switches starting with an overview on state-of-the-art high and ultra high voltage SiC power devices, both super junction and IGBT based (Yoshiyuki Yonezawa, National Institute of Advanced Industrial Science and Technology), followed by insights into the exciting emerging field of GaN power integrated circuits, from technology to design (Kevin Chen, Hong Kong University of Science and Technology). To demonstrate that silicon is fighting back wide band gap technologies, the next talk will give an overview on silicon IGBTs and fast recovery diodes and an outlook into the potentials of future silicon IGBTs (Munaf Rahimo, MTAL). Since the advanced power semiconductor devices, especially the wide band gap devices, allow for much faster switching, the electro-magnetic aspects of power electronic systems increase in importance. The fourth talk will therefore teach ways of how to model the EMC behavior across a wide frequency range from MHz to GHz (Ivana Kovacevic-Badstübner, ETH Zurich). The short course will close with a view beyond the limits of current lateral GaN HEMT technology into vertical GaN transistors and lateral AlN-based HEMTs (Oliver Hilt, Ferdinand-Braun-Institute).

I would also like to thank our generous sponsors for their donations to enable this conference and our exhibitors complementing the peer-reviewed technical program with cutting-edge technology on display. This year we have 15 exhibitors in different areas relevant for the power semiconductor community, including wide bandgap semiconductor devices, substrates and epitaxy solutions, clean room manufacturing tools, foundry technologies, simulations tools, electrical test and failure analysis tools, as well as passive application components. Take the chance to visit their virtual stands and connect to them in a chat to learn more about their exciting offerings.

Finally, I would like to thank for having mastered all the ISPSD2020 Organizing Committee, in particular Prof. Nando Kaminski (Technical Program Chair), Prof. Ulrike Grossner (Short Course Chair), Mrs. Pavla Hlinkova (Local Arrangements and Project Lead) and the Advisory Committee for having mastered all the additional challenges imposed on us by Covid-19. A big thanks also to all technical program committee members for their hard work and personal dedication in making this conference a success and of course to all authors for laying the groundwork for the exciting technical program ahead of us!

Sincerely Yours

Dr. Oliver HäberlenGeneral Chair, ISPSD2020




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CONFERENCE INFORMATION

REGISTRATION

MORE DETAILS ARE PROVIDED HERE

INSTRUCTIONS FOR SPEAKERS

ISPSD2020 is organized as a fully virtual conference. Like in a “real” conference, your presentation is scheduled at a given time and you will be presenting in real-time to the audience by sharing your screen in the virtual conference tool. Your presentation will be recorded for later on-demand availability. You will find your time slot in the detailed program.

During the conference, the speaker preparation room for your session is open 30 minutes before the live session starts. Please join your session in time, at least 10 minutes before the scheduled start.

For oral papers presentation time is 20 minutes plus 5 minutes for Q&A. For plenary speakers, presentation time is 35 minutes plus 5 minutes for Q&A. For short course speakers, presentation time is 50 minutes plus 10 minutes for Q&A.

Recommended aspect ratio for best viewing experience is 16:9, although 4:3 can be used as well in Microsoft PowerPoint version 2013 or higher.

PLEASE FIND MORE DETAILED INFORMATION HERE

POSTER INSTRUCTIONS

ISPSD2020 is organized as a fully virtual conference. Like in a “physical” conference there are different poster sessions (six sessions of one hour each). Within the poster sessions each poster have its own chat associated for people watching your poster, so make sure that you are online in your poster booth for the full one hour of your poster session to answer upcoming questions and make it a lively conference, see detailed program.

Poster format for a virtual conference is a short 2 minute presentation and one additional supporting document in PDF format.

The Posters are displayed during the whole virtual conference.

PLEASE FIND MORE DETAILED INFORMATION HERE

VIRTUAL EXHIBITIONwww.ispsd2020.com/exhibitors

EXHIBITION HOURS

Monday, September 14, 2020 14:00 - 17:10

Tuesday, September 15, 2020 14:00 - 18:25

Wednesday, September 16, 2020 14:00 - 18:00

Thursday, September 17, 2020 14:00 - 18:00

Friday, September 18, 2020 14:00 - 18:00




ISPSD HALL OF FAME

The purpose of the ISPSD Hall of Fame (IHF) is to honor individuals who have made high impact contributions in advancing power semiconductor technology and/or sustaining the success of ISPSD. Since 2018 the IHF has replaced the traditional “Contributory Awards” and “Pioneer Awards”.

Michael S. Adler for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Gehan A. J. Amaratunga for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

B. Jayant Baliga for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Xingbi Chen † for his contributions to super-junction power semiconductor devices

Tat-Sing Paul Chow for his contributions to silicon and wide bandgap power semiconductor devices and his leadership role in organizing ISPSD conferences

Mohamed N. Darwish for his contributions to the advancement of power semiconductor technology and his leadership role in organizing ISPSD conferences

Taylor R. Efland for his contributions to power IC technology and his leadership role in organizing ISPSD conferences

Wolfgang Fichtner for his contributions to MOS gated thyristors and TCAD modeling tools and his leadership role in organizing ISPSD conferences

Min-Koo Han for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Phil Hower for his contributions to power device safe operating area study and power IC technology

André A. Jaecklin for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Daniel Kinzer for his contributions to power MOSFET technology and his leadership role in organizing ISPSD conferences

Leo Lorenz for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Gourab Majumdar for his contributions to IGBT and intelligent power module technology and his leadership role in organizing ISPSD conferences

José Millán † for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Peter Moens for his contributions to integrated power technology and GaN power device and reliability and his leadership role in organizing ISPSD conferences

Akio Nakagawa for his contributions to IGBT and power IC technology

Hiromichi Ohashi for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Tadahiro Ohmi † for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences




Masahiro Okamura for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

James D. Plummer for his contributions to MOS-bipolar power devices and power ICs and for inspiring and training a new generation of device researchers

C. André T. Salama for his contributions to power IC technology and his leadership role in organizing ISPSD conferences

Yasukazu Seki for his contributions to IGBT technology and his leadership role in organizing ISPSD conferences

M. Ayman Shibib for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Dieter Silber for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Paolo Spirito for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Yoshitaka Sugawara for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Yoshiyuki Uchida for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

Harry M. J. Vaes for his contributions to RESURF technology Carl Frank Wheatley † for his contributions to IGBT and radiation-hard power device technology

Richard K. Williams for his contributions to trench power MOSFET and power IC technology and his leadership role in organizing ISPSD conferences

Toshiaki Yachi for his contributions to modern power semiconductor technology and his leadership role in organizing ISPSD conferences

AWARDEES OF 2019

Don R. Disney for his contributions to power IC technology and his leadership role in organizing ISPSD conferences

Alex Lidow for his contributions to silicon and GaN power device technology

† - deceased




ISPSD 2019 OHMI BEST PAPER AWARD

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial GrowthRyoji Kosugi, Shiyang Ji, Kazuhiro Mochizuki, Kohei Adachi, Yasuyuki Kawada, Satoshi Segawa, Yoshiyuki Yonezawa, Hajime Okumura National Institute of Advanced Industrial Science and Technologies (AIST), Japan

Abstract – A super-junction (SJ) device has been developed to improve the trade-off relationship between the breakdown voltage (VBD

) and specific on-resistance (R

onA). A multi-epitaxial growth method had been used for fundamental demonstrations, but this method needs

a lot of repetitions of epitaxial growth and implantation in the case of SiC material. A trench-filling epitaxial growth method is expected as a promising alternative, especially for high-voltage devices. In this study, we have established critical fabrication processes for a thick (> 20 μm) and high-aspect-ratio SJ structure. The measured R

onA of a 7.8 kV SJ MOSFET was 17.8 mΩ·cm2, which corresponds to half

the Ron

A of the state-of-the-art 6.5 kV-class SiC MOSFET with an n-type drift layer. Improvement of trade-off relationship exceeding the 4H-SiC theoretical limit was experimentally demonstrated for the first time.

Ryoji Kosugi received the Ph.D. degree in surface science from Tohoku University, Sendai, Japan, in 1999. Since 2001, he has been with the National Institute of Advanced Industrial Science and Technologies (AIST), Japan. His primary responsibilities are process engineering and device design for developing silicon carbide (SiC) power metal-oxide-semiconductor (MOS) devices. Since 2010, he has been working on the research and development of super-junction devices of SiC material.

Shiyang Ji received his B.E., M.E. and Ph.D. degrees in 1998, 2001 and 2006 from ECUST (Shanghai, China), CIOMP (Changchun, China) and Tohoku University (Sendai, Japan), respectively. In 2011, he joined the ADPERC of AIST and began to develop CVD growth techniques for 4H-SiC-based PiN, IGBT and MOSFET devices.

Kazuhiro Mochizuki received the Ph.D. degree in electronic engineering from the University of Tokyo, Tokyo, Japan, in 1995. Since 1988, he has been with Hitachi, Ltd., Tokyo. He has contributed to advances in epitaxial growth, device, and modeling technologies for compound semiconductors. From 2015 to 2019, he was on loan to the National Institute of Advanced Industrial Science and Technology, Japan.




Kohei Adachi received his B.E. and M.E. degrees in 2012 and 2014 from Kyoto University, Kyoto, Japan. He joined Mitsubishi Electric Corporation in 2014, and has been engaged in the research and development of SiC power devices. He was engaged in the development of superjunction SiC devices at National Institute of Advanced Industrial Science and Technology, Japan from 2017 to 2019. His current interests include development of trench-type SiC MOSFETs.

Yasuyuki Kawada received his B.E. and M.E. degrees in 1989 and 1991 from Tokai University, Kanagawa, Japan, and his Ph.D. degree in 2011 from University of Tsukuba, Ibaraki, Japan. He joined Fuji Electric Co., Ltd. in 1991. He was engaged in the research and development of gas sensor devices and magnetic recording media. From 2005, he has been engaged in the research and development of SiC power devices. He was seconded to AIST from 2009 to 2019.

Satoshi Segawa received his B.S. and M.S. degrees from Akita university in 2012 and 2014, respectively. He joined Asahi Diamond Industrial Co., Ltd., in 2014. His current interest is the processing techniques and development of grinding wheel. From 2017 to 2019, he was being transferred to AIST, Tsukuba, Japan, where he has been engaged SiC wafer planarization.

Yoshiyuki Yonezawa received his Ph.D. degree from Tokyo Institute of Technology. From 1989 to 2013, he was an engineer at Fuji Electric Co., Ltd., where he was engaged in research and development in solid state laser system, hard disk media, dielectric thin films for DC/DC converter, and SiC power devices. He was a visiting scholar at Stanford University from 1996 to 1998. He joined National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, in 2013. He is currently Principal Research Manager and his research involves SiC high voltage SJ-MOSFET, ultra-high-voltage IGBTs and related fundamental technologies.

Hajime Okumura received the B.S. and M.S. in chemistry from Kyoto Univ. and the Ph.D. from Osaka University, Japan. He held a research position of Electrotechnical Laboratory (ETL), MITI, including concurrent positions as a technical officer in Agency of Industrial Science and Technology, MITI and a general manager at R&D Association for Future Electron Device. Since 2008, he has been the director of Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST). His specialty is material science focused on compound semiconductors and their power electronics application.




ISPSD 2019 CHARITAT AWARD

Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurement Utilizing Franz-Keldysh EffectTakuya Maeda1, Tetsuo Narita2, Hiroyuki Ueda2, Masakazu Kanechika2, Tsutomu Uesugi2, Tetsu Kachi3, Tsunenobu Kimoto1, Masahiro Horita1, 3, Jun Suda1, 3

1Kyoto University, Japan2Toyota Central R&D Labs., Inc.3Nagoya University, Japan

Abstract – We proposed a novel measurement method of avalanche multiplication utilizing the unique sub-bandgap optical absorption induced by high electric field, “the Franz-Keldysh effect,” in GaN p-n junction diodes. The voltage dependence of the photocurrent induced by the Franz-Keldysh effect is predictable: the theoretical calculation with consideration of optical absorption in the depletion region well reproduces the experimental photocurrent in the voltage range where avalanche multiplication is negligible. We prepared GaN p-n junction diodes without electric field crowding and measured the photocurrent under sub-bandgap illumination up to breakdown voltages. Comparing measured photocurrents with the theoretical photocurrents, the multiplication factors were extracted. Under the assumption that the impact ionization coefficients of electrons and holes are equal, the impact ionization coefficient in GaN is estimated by analyzing the multiplication factors. This measurement method is useful for investigation of avalanche multiplication in wide-bandgap semiconductors.

Takuya Maeda received his B.E., M.E. and Ph.D. degrees in Dept. of Electronic Science and Engineering from Kyoto University, Kyoto, Japan, in 2016, 2018 and 2020, respectively. In Kyoto University, he was mainly working on avalanche breakdown in GaN power devices. He is currently a postdoctoral researcher and studies the new nitride materials and its electronic device application in Cornell University, Ithaca, NY, USA.




ISPSD 2019 CHARITAT AWARD

An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction DetectionWei Jia Zhang1, Yahui Leng2, Jingshu Yu1, Yu Shen Lu1, Chu Yao Cheng1, Wai Tung Ng1

1University of Toronto, Canada2Zhejiang University, China

Abstract – In this paper, an active clamping SenseFET circuit is proposed to measure the duration that low-side GaN HEMT is in reverse-conduction with protection from the high voltage at the switching node. The output of the SenseFET clamping circuit is processed by a custom designed gate driver IC. This IC is fabricated using TSMC’s 0.18 μm BCD GEN2 process for driving e-mode GaN power HEMTs with an on-chip closed-loop dead-time correction circuit. The one-step correction mode can optimize the dead-times for both turn-on and turn-off edges in one switching cycle for switching frequencies up to 10 MHz with precision of 0.32 ns. This allows the power converters to maintain optimal conversion efficiency over the full output current range.

Wei Jia Zhang received her B.A.Sc. Degree in Electrical Engineering from University of British Columbia, Vancouver, Canada. She then joined the research team led by Dr. Wai Tung Ng in The University of Toronto, Canada, where she received her M.A.Sc. and Ph.D. degrees. Her research interests include power device design, CMOS manufacturing processes, gate driver design for various power applications, and integrated smart gate driving techniques.




ANNOUNCEMENT ISPSD 2021




SCHEDULE AT A GLANCEVirtual ISPSD2020 Technical Program

Sunday, September 13, 2020, 13:00 - 19:00

CEST PDT JST Virtual Zeremoniensaal

13:00 4:00 20:00 13:00

Short Course Session 1 (2 Lectures)14:00 5:00 21:00

15:00 6:00 22:00 15:10 Break

16:00 7:00 23:00 15:50

Short Course Session 2 (3 Lectures)17:00 8:00 24:00

18:00 9:00 1:00

Monday, September 14, 2020, 14:00 - 17:10

CEST PDT JST Virtual Festsaal14:00 5:00 21:00 14:00 Opening14:30 5:30 21:30 14:30 Plenary Session I15:00 6:00 22:00 15:10

Break & Exhibition15:30 6:30 22:30

16:00 7:00 23:00 15:50

Plenary Session II16:30 7:30 23:30

17:00 8:00 24:00

Tuesday, September 15, 2020, 14:00 - 18:25

CEST PDT JST Virtual Festsaal Virtual Zeremoniensaal

14:00 5:00 21:00 14:00

Session 1GaN Device Reliability and Circuits

14:00

Session 2Lateral Low Voltage Devices

14:30 5:30 21:30

15:00 6:00 22:00

15:30 6:30 22:30 15:40

Break & Exhibition16:00 7:00 23:00

16:30 7:30 23:30 16:20

Session 3High Voltage Silicon Devices 1

16:20

Session 4SiC Device Ruggedness and

Characterization

17:00 8:00 24:00

17:30 8:30 0:30

18:00 9:00 1:00




Wednesday, September 16, 2020, 14:00 - 18:00


14:00 5:00 21:00 14:00Session 5

Packaging and Reliability

14:00

Session 6Gate Driver ICs

14:30 5:30 21:30

15:00 6:00 22:00 15:15Break & Exhibition

15:30 6:30 22:30 15:40

Break & Exhibition16:00 7:00 23:00 15:55

Session 7Advanced SiC MOSFETs

16:30 7:30 23:30 16:20

Session 8High Voltage Silicon Devices 2

17:00 8:00 24:00

17:30 8:30 0:30

Thursday, September 17, 2020, 14:00 - 18:00


14:00 5:00 21:00 14:00

SiC Poster Session14:00

IC Design Poster Session14:30 5:30 21:30

15:00 6:00 22:00 15:00 Break & Exhibition

15:30 6:30 22:30 15:30

GaN Poster Session15:30

Packaging Poster Session16:00 7:00 23:00


17:00 8:00 24:00 17:00

Low Voltage Devices Poster Session17:00

High Voltage Devices Poster Session17:30 8:30 0:30

Friday, September 18, 2020, 14:00 - 18:00


14:00 5:00 21:00 14:00

Session 9Innovative GaN Devices & Modelling

14:00

Session 10Power Cycling Tests for SiC Devices

14:30 5:30 21:30

15:00 6:00 22:00


16:00 7:00 23:00 16:15

Session 11Vertical Low Voltage Devices

Exhibition16:30 7:30 23:30

17:00 8:00 24:00

17:30 8:30 0:30 17:30 Closing (Virtual Festsaal)




SHORT COURSE

Date Sunday, September 13, 2020

Venue Virtual Zeremoniensaal

13:00 Welcome Prof. Ulrike Grossner, ETH Zurich

13:10 SiC Super Junction MOSFETs and SiC-IGBTs – State-of-the-art in High- to Ultra-High-Voltage SiC Power Devices Dr. Yoshiyuki Yonezawa, AIST

14:10 GaN Power IC’s: Technology, Dynamic Device Behavior and Design Prof. Kevin J. Chen, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology

15:10 Break

15:50 Silicon IGBTs and Fast Recovery Diodes for High Power Applications Dr. Munaf Rahimo, MTAL

16:50 Electromagnetic-Circuit Modeling for Advanced Power Semiconductor Devices Dr. Ivana Kovacevic-Badstübner, Advanced Power Semiconductor Laboratory, ETH Zurich

17:50 Break

18:00 Beyond the Limits of GaN HEMT Technology – Vertical GaN Transistors and Towards AlN Electronics Dr. Oliver Hilt, Ferdinand-Braun-Institut Berlin

19:00 End




SESSION DETAILS

MONDAY, SEPTEMBER 14, 202014:00 - 14:30 Virtual Festsaal

OPENING SESSIONWelcomeOliver Häberlen, General Chair (Infineon Technologies, Austria)

Program IntroductionNando Kaminski, Technical Program Chair (University of Bremen, Germany)

ISPSD 2019 Ohmi Best Paper AwardKuang Sheng (General Chair ISPSD 2019), Kevin Chen (Technical Program Chair ISPSD 2019)

ISPSD 2020 Hall of FameOliver Häberlen, General Chair (Infineon Technologies, Austria)

14:30 - 15:10 Virtual FestsaalA1L-A

Plenary Session 1Chairs: Oliver Häberlen (Infineon Technologies, Austria)

Kimimori Hamada (PDPlus LLC, Japan)

14:30 - 15:10 Novel IEGT Based Modular Multilevel Converter for New Hokkaido-Honshu HVDC Power TransmissionYoshimasa SatoToshiba Energy Systems & Solutions Corporation, Japan

15:50 - 17:10 Virtual FestsaalA2L-A

Plenary Session 2Chairs: Nando Kaminski (University of Bremen, Germany)

Ichiro Omura (Kyushu Institute of Technology, Japan)

15:50 - 16:30 Power Semiconductors – the Keys for a Future Green MobilityPatrick Leteinturier, Clemens MuellerInfineon Technologies AG, Germany

16:30 - 17:10 Mixed Signal and Power Semiconductor Technology for Industrial and Automotive ElectronicsSameer PendharkarTexas Instruments Inc, United States




TUESDAY, SEPTEMBER 15, 202014:00 - 15:40 Virtual Festsaal

B1L-A

GaN Device Reliability and CircuitsChairs: Peter Moens (On Semiconductor, Belgium)

Sameh Khalil (Infineon Technologies, USA)

14:00 - 14:25 E-Mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate ReliabilityChengcai Wang2, Mengyuan Hua2, Song Yang1, Li Zhang1, Kevin J. Chen1

1Hong Kong University of Science and Technology, Hong Kong; 2Southern University of Science and Technology, China

14:25 - 14:50 Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT Under Reverse-Bias StressJunting Chen2, Mengyuan Hua2, Jiali Jiang2, Jiabei He1, Jin Wei1, Kevin J. Chen1

1Hong Kong University of Science and Technology, Hong Kong; 2Southern University of Science and Technology, China

14:50 - 15:15 Stable Cascode GaN HEMT Operation by Direct Gate DriveToru Sugiyama2, Hung Hung2, Yasuhiro Isobe2, Akira Yoshioka2, Takenori Yasuzumi2, Yusuke Sato2, Masataka Tsuji2, Yiyao Liu2, Shinichi Umekawa2, Yosuke Kajiwara1, Masahiro Koyama1, Kentaro Ikeda1

1Toshiba Corporation, Japan; 2Toshiba Electronic Devices & Storage Corporation, Japan15:15 - 15:40 Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-Pole PFC Converter

(Late News)Mohammad Shawkat Zaman2, Wan Lin Jiang2, Samantha Kadee Murray2, Herbert De Vleeschouwer1, Peter Moens1, Jaume Roig1, Olivier Trescases2

1ON Semiconductor, Belgium; 2University of Toronto, Canada14:00 - 15:40 Virtual Zeremoniensaal

B1L-B

Lateral Low Voltage DevicesChairs: Hiroki Fujii (Samsung Electronics, Korea)

Riccardo Depetro (STMicroelectronics, Italy)

14:00 - 14:25 A Study of On-State Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise TimeTakahiro Mori, Tomonari Yamaguchi, Takeshi Kamino, Junji Tsuruta, Mototsugu Okushima, Hirokazu Sayama, Koji IizukaRenesas Electronics Corporation, Japan

14:25 - 14:50 Schottky Source LDMOS - Electrical SOA Improvement Through BJT SuppressionBrendan Toner3, Markus Frank4, Lutz Steinbeck2, Stefan Eisenbrandt4, Ralf Granzner4, Darin Davis1, William Richards Jr.1, Gary Dolny1, Terry Johnson1

1Silicet, LLC, United States; 2X-FAB Dresden GmbH & Co. KG, Germany; 3X-FAB Sarawak Sdn. Bhd., Malaysia; 4X-FAB Semiconductor Foundries GmbH, Germany

14:50 - 15:15 Mechanism and Experiments of a Novel Dielectric Termination Technology Based on Equal-Potential PrincipleWentong Zhang2, Jian Zu2, Xuhan Zhu2, Sen Zhang1, Zhili Zhang1, Nailong He1, Boyong He1, Ming Qiao2, Zhaoji Li2, Bo Zhang2

1CSMC Technologies Corporation, China; 2University of Electronic Science and Technology of China, China

15:15 - 15:40 Towards Ultimate Scaling of LDMOS with Ultralow Specific On-Resistance (Late News)Saumitra Mehrotra, Ljubo Radic, Bernhard Grote, Tanuj Saxena, Ganming Qin, Vishnu Khemka, Tania Thomas, Mark GibsonNXP Semiconductors N.V., United States




16:20 - 18:00 Virtual FestsaalB2L-A

High Voltage Silicon Devices 1Chairs: Giovanni Breglio (University of Naples Federico II, Italy)

Chiara Corvasce (ABB, Switzerland)

16:20 - 16:45 A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-Drive)Tomoyuki Miyoshi2, Hiroshi Suzuki2, Tomoyasu Furukawa2, So Watanabe2, Masaki Shiraishi2, Yujiro Takeuchi2, Mutsuhiro Mori11Hitachi Power Semiconductor Device Ltd., Japan; 2Hitachi, Ltd., Japan

16:45 - 17:10 13kV UHV-IGBT: Feasibility StudyAtsushi Ito2, Ichiro Omura1

1Kyushu Institute of Technology, Japan; 2Kyusyu Institute of Technology, Japan

17:10 - 17:35 Bidirectional Phase Control Thyristor (BiPCT): a New Antiparallel Thyristor ConceptJan Vobecky, Umamaheswara Reddy Vemulapati, Renata Bessa-DuarteABB Power Grids Switzerland Ltd., Switzerland

17:35 - 18:00 A High-Voltage Transients Suppressor DiodeMarkus Beninger-Bina, Thomas Basler, Matteo Dainese, Hans-Joachim SchulzeInfineon Technologies AG, Germany

16:20 - 18:25 Virtual ZeremoniensaalB3L-B

SiC Device Ruggedness and CharacterizationChairs: Siddarth Sundaresan (GeneSiC Semiconductor Inc., USA)

Andrei Mihaila (ABB Power Grids, Switzerland)

16:20 - 16:45 Which Is Harder SOA Test for SiC MOSFET to Do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit Mode Switching (USCS) ? Does UIS Play a Role of USCS ?Kazuhiko Hasegawa, Kensuke Taguchi, Yasuhiro Kagawa, Eisuke Suekawa, Naoto Kaguchi, Yasuo Ata, Hideki Haruguchi, Yu Nakashima, Tadaharu MinatoMitsubishi Electric Corporation, Japan

16:45 - 17:10 Current Crowding Study by IIR-LD in a 1.2 kV SiC Schottky DiodeOriol Salvadó Aviñó3, Ferran Bonet3, Miquel Vellvehi3, Xavier Jordà3, Philippe Godignon3, Xavier Perpiñá3, Gianluca Giorgio1, Eduard Bochaca2

1Datalogic S.p.A., Italy; 2IDNEO, Spain; 3IMB-CNM (CSIC), Spain17:10 - 17:35 Superior Short-Circuit Performance of SiC Superjunction MOSFET

Masakazu Okada1, Shinya Kyogoku3, Teruaki Kumazawa4, Jun Saito5, Tadao Morimoto1, Manabu Takei2, Shinsuke Harada1

1National Institute of Advanced Industrial Science and Technology, Japan; 2National Institute of Advanced Industrial Science and Technology / Fuji Electric Co., Ltd., Japan; 3National Institute of Advanced Industrial Science and Technology / Toshiba Corporation, Japan; 4National Institute of Advanced Industrial Science and Technology / Toyota Motor Corporation, Japan; 5Toyota Motor Corporation, Japan

17:35 - 18:00 Analysis of 1.2 kV SiC SWITCH-MOS After Short-Circuit StressMasataka Okawa2, Taiga Kanamori2, Ruito Aiba2, Hiroshi Yano2, Noriyuki Iwamuro2, Shinsuke Harada1

1National Institute of Advanced Industrial Science and Technology, Japan; 2University of Tsukuba, Japan

18:00 - 18:25 A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling (Late News)Peter Moens1, Jimmy Franchi1, Jan Lettens2, Luc De Schepper1, Martin Domeij1, Fredrik Allerstam2

1ON Semiconductor, Belgium; 2ON Semiconductor, Sweden




WEDNESDAY, SEPTEMBER 16, 202014:00 - 15:15 Virtual Festsaal

C1L-A

Packaging and ReliabilityChairs: Sven Berberich (Semikron, Germany)

Tomoyuki Miyoshi (Hitachi, Ltd., Japan)

14:00 - 14:25 V-I Curve Based Condition Monitoring System for Power DevicesMasanori Tsukuda1, Li Guan1, Kazuha Watanabe1, Haruyuki Yamaguchi2, Kenshi Takao2, Ichiro Omura1

1Kyushu Institute of Technology, Japan; 2Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Japan

14:25 - 14:50 Dv/Dt-Control of 1200-V Co-Packaged SiC-JFET/GaN-HEMT Cascode DeviceGang Lyu, Yuru Wang, Jin Wei, Zheyang Zheng, Jiahui Sun, Kevin J. ChenHong Kong University of Science and Technology, Hong Kong

14:50 - 15:15 Packaging Degradation Studies of High Temperature SiC MOSFET Discrete PackagesBassem Mouawad, Li Yang, Pearl Agyakwa, Martin Corfield, C. Mark JohnsonUniversity of Nottingham, United Kingdom

14:00 - 15:40 Virtual ZeremoniensaalC2L-B

Gate Driver ICsChairs: John Pigott (NXP Semiconductors, USA)

Katsumi Eikyu (Renesas Electronics Corp., Japan)

14:00 - 14:25 CMOS Gate Driver with Fast Short Circuit Protection for SiC MOSFETsYazan Barazi, Nicolas Rouger, Fréderic RichardeauUniversité de Toulouse, France

14:25 - 14:50 A GaN HEMT Gate Driver IC with Programmable Turn-on dV/dt ControlXin Ming, Xiang-Jun Li, Zhi-Wen Zhang, Yao Qin, Qi-Fei Xu, Zi-Wei Fan, Yuan-Yuan Liu, Xu-Dong Feng, Qi Zhou, Zhuo Wang, Bo ZhangUniversity of Electronic Science and Technology of China, China

14:50 - 15:15 A Segmented Gate Driver for E-Mode GaN HEMTs with Simple Driving Strength Pattern ControlWeijia Zhang1, Jingshu Yu1, Yahui Leng2, Wen Tao Cui1, Gao Qiang Deng1, Wai Tung Ng1

1University of Toronto, Canada; 2Zhejiang University, China

15:15 - 15:40 Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaNPlinio Bau1, Marc Cousineau2, Bernardo Cougo1, Fréderic Richardeau2, Nicolas Rouger2

1Irt Saint Exupéry, France; 2Université de Toulouse, France

15:55 - 18:00 Virtual FestsaalC3L-A

Advanced SiC MOSFETsChairs: Sei-Hyung Ryu (Wolfspeed, USA)

Yoshiyuki Yonezawa (AIST, Japan)

15:55 - 16:20 Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET EffectTakehiro Kato3, Yuji Fukuoka3, Hyemin Kang4, Kimimori Hamada2, Atsushi Onogi3, Hirokazu Fujiwara3, Takahiro Ito3, Tsunenobu Kimoto1, Florin Udrea4

1Kyoto University, Japan; 2PDPlus, Japan; 3Toyota Motor Corporation, Japan; 4University of Cambridge, United Kingdom16:20 - 16:45 Novel Termination Structure Eliminating Bipolar Degradation of SBD-Embedded SiC-MOSFET

Yuichi Nagahisa, Shiro Hino, Hideyuki Hatta, Koutarou Kawahara, Shingo Tomohisa, Naruhisa MiuraMitsubishi Electric Corporation, Japan




16:45 - 17:10 4H-SiC Trench MOSFET with Low on-Resistance at High TemperatureHidefumi Takaya, Tadashi Misumi, Hirokazu Fujiwara, Takahiro ItoToyota Motor Corporation, Japan

17:10 - 17:35 Design Consideration of Low Capacitance SiC JMOS for Adapting High-Speed OperationFu-Jen Hsu1, Chien-Chung Hung1, Kuo-Ting Chu1, Lurng-Shehng Lee1, Chwan-Ying Lee1, Jheng-Yi Jiang2, Chih-Fang Huang2

1Hestia Power Inc., Taiwan; 2National Tsing Hua University, Taiwan

17:35 - 18:00 4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-ResistanceReza Ghandi1, Alexander Bolotnikov1, Stacey Kennerly1, Collin Hitchcock2, Poon-Man Tang2, Paul Chow2

1GE Research Center, United States; 2Rensselaer Polytechnic Institute, United States

16:20 - 18:00 Virtual ZeremoniensaalC4L-B

High Voltage Silicon Devices 2Chairs: Wataru Saito (Kyushu University, Japan)

Yuichi Onozawa (Fuji Electric, Japan)

16:20 - 16:45 A Low Loss and On-State Voltage Superjunction IGBT with Depletion TrenchXiaorong Luo, Sen Zhang, Jie Wei, Yang Yang, Wei Su, Diao Fan, Congcong Li, Zhaoji Li, Bo ZhangUniversity of Electronic Science and Technology of China, China

16:45 - 17:10 The p-Ring Trench Schottky IGBT: a Solution Towards Latch-Up Immunity and an Enhanced Safe-Operating AreaMarina Antoniou4, Florin Udrea2, Neophytos Lophitis3, Chiara Corvasce1, Luca De-Michielis1

1ABB Power Grids Switzerland Ltd., Switzerland; 2University of Cambridge, United Kingdom; 3University of Nottingham, United Kingdom; 4University of Warwick, United Kingdom

17:10 - 17:35 CSTBT™ Based Split-Gate RC-IGBT with Low Loss and EMI NoiseKoichi Nishi, Atsushi NarazakiMitsubishi Electric Corporation, Japan

17:35 - 18:00 Intrinsic Propensity of IGBTs to High-Frequency Short-Circuit OscillationsVera van Treek, Frank Pfirsch, Franz-Josef Niedernostheide, Roman Baburske, Judith SpechtInfineon Technologies AG, Germany




THURSDAY, SEPTEMBER 17, 202014:00 - 15:00 Virtual Festsaal

D1P-C

SiC and other Materials (Poster Session)Chair: Dethard Peters (Infineon Technologies AG, Germany)

Radiation Influence Comparison Between SiC JMOS and DMOSFu-Jen Hsu1, Chien-Chung Hung1, Kuo-Ting Chu1, Lurng-Shehng Lee1, Wen-Bin Yeh1, Chwan-Ying Lee1, Der-Sheng Chao3, Jheng-Yi Jiang2, Chih-Fang Huang2

1Hestia Power Inc., Taiwan; 2National Tsing Hua University, Taiwan; 3Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan

Analysis of Channel Properties at Extremely High Temperature in 3.3-kV SiC Trench-Etched Double Diffused MOS (TED-MOS®) Using Temperaturesensitive Electrical Parameters (TSEPs)Kazuki Tani, Naoki Tega, Akio ShimaHitachi, Ltd., Japan

SiC MOSFET Corner and Statistical SPICE Model GenerationCanzhong He3, James Victory1, Yunpeng Xiao4, Herbert De Vleeschouwer2, Elvis Zheng4, Zhiping Hu4

1ON Semiconductor, Germany; 2ON Semiconductor, Belgium; 3ON Semiconductor, United States; 4ON Semiconductor, China

Critical Temperature and Failure Mechanism of SiC Schottky Rectifiers in Unclamped Inductive Switching (UIS)Andrei Konstantinov3, Fredrik Allerstam3, Helen Pham2, George Park2, Kyeong-Seok Park2, Daniel Waible1, Thomas Neyer1

1ON Semiconductor, Germany; 2ON Semiconductor, Korea; 3ON Semiconductor, Sweden

A New Double Trench, Buried-P JTE Edge Termination for 1200 V-Class SiC DevicesYong Liu1, Hao Feng1, Xianda Zhou2, Linhua Huang1, Chao Xiao1, Xin Peng1, Johnny Kin On Sin1

1Hong Kong University of Science and Technology, Hong Kong; 1Hong Kong University of Science and Technology, China; 2Sun Yat-Sen University, China

Edge Termination Design with Strong Process Robustness for 1.2 kV-Class 4H-SiC Super Junction V-Groove MOSFETsTakeyoshi Masuda1, Tomoaki Hatayama1, Shinsuke Harada1, Yu Saitou2

1National Institute of Advanced Industrial Science and Technology, Japan; 2Sumitomo Electric Industries, Ltd, Japan

SiC MOSFETs Soft and Hard Failure Modes: Functional Analysis and Structural CharacterizationFréderic Richardeau3, Francois Boige3, Alberto Castellazzi2, Vanessa Chazal1, Asad Fayyaz5, Alessandro Borghese4, Andrea Irace4, Gerard Guibaud1

1ITEC Lab, THALES, Toulouse, France; 2Kyoto University of Advanced Science, Japan; 3Université de Toulouse, France; 4University of Naples Federico II, Italy; 5University of Nottingham, United Kingdom

Investigation of dVDS/dt Controllability on Rg in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dVDS/dtRuito Aiba2, Kevin Matsui2, Masataka Okawa2, Taiga Kanamori2, Hiroshi Yano2, Noriyuki Iwamuro2, Shinsuke Harada1

1National Institute of Advanced Industrial Science and Technology, Japan; 2University of Tsukuba, Japan

1.2 kV/2.9 mΩ·cm2 Vertical NiO/β-Ga2O3 Heterojunction Diodes with High Switching PerformanceYawei Hu1, Shanyong Wang1, Ziqi Yang1, Rongsheng Chen1, Xing Lu2, Yuan Ren2, Xianda Zhou2, Zimin Chen2, Yanli Pei2, Gang Wang2

1South China University of Technology, China; 2Sun Yat-Sen University, China

Degradation of 4H-SiC MOSFET Body Diode Under Repetitive Surge Current StressZhengyun Zhu2, Na Ren2, Hongyi Xu2, Li Liu2, Qing Guo2, Junming Zhang2, Kuang Sheng2, Zhenyu Wang1

1Xi‘an Jiaotong University, China; 2Zhejiang University, China

Surge Absorption by the 430V Mesa-Structured SiC Avalanche DiodeMasayuki Yamamoto2, Kunio Koseki2, Koji Nakayama2, Yasunori Tanaka2, Shigeki Nishiyama1

1Murata Manufacturing Co., Ltd., Japan; 2National Institute of Advanced Industrial Science and Technology, Japan

Output Capacitance Losses in Wide-Band-Gap Transistors: a Small-Signal Modeling ApproachMohammad Samizadeh Nikoo, Armin Jafari, Nirmana Perera, Elison MatioliÉcole Polytechnique Fédérale de Lausanne, Switzerland




10-kV 4H-SiC Drift Step Recovery Diodes (DSRDs) for Compact High-Repetition Rate Nanosecond HV Pulse GeneratorRuize Sun2, Kenan Zhang2, Wanjun Chen2, Yun Xia2, Ji Tan1, Yunfeng Chen1, Song Bai1, Bo Zhang2

1Nanjing Electronic Devices Institute, China; 2University of Electronic Science and Technology of China, China

Single and Repetitive Surge Current Events of 3.3 kV-20 a 4H-SiC JBS Rectifiers: the Impact of the Anode LayoutNazareno Donato2, Florin Udrea2, Andrei Mihaila1, Lars Knoll1, Gianpaolo Romano1, Lukas Kranz1, Marina Antoniou3

1ABB Power Grids Switzerland Ltd., Switzerland; 2University of Cambridge, United Kingdom; 3University of Warwick, United Kingdom

Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETsHe Du, Nick Baker, Francesco IannuzzoAalborg University, Denmark

3300 V SiC MOSFETs with Integrated Schottky RectifiersSiddarth Sundaresan, Jaehoon Park, Vamsi Mulpuri, Sumit Jadav, Ranbir SinghGeneSiC Semiconductor, United States

Investigation of Avalanche Capability of 1200V 4H-SiC MPS Diodes and JBS DiodesLi Liu, Na Ren, Jiupeng Wu, Zhengyun Zhu, Hongyi Xu, Qing Guo, Kuang ShengZhejiang University, China

1.2kV SiC Merged PiN Schottky Diode with Improved Surge Current CapabilityNa Ren, Kuang ShengZhejiang University, China

Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 DiodeAtsushi Shimbori2, Hiu Yung Wong1, Alex Huang2

1San Jose State University, United States; 2University of Texas at Austin, United States

Surge Current Capability of 6.5kV-Rated SiC MOSFETsAndrei Mihaila1, Chunlei Liu1, Gianpaolo Romano1, Enea Bianda2, Stephan Wirths1, Yulieth Arango1, Lars Knoll1, Andreas Baschnagel1, Boni Boksteen1

1ABB Power Grids Switzerland Ltd., Switzerland; 2ABB Switzerland Ltd., Switzerland

Vertical Power SiC MOSFETs with High-K Gate Dielectrics and Superior Threshold Voltage StabilityStephan Wirths1, Yulieth Arango1, Andrei Mihaila1, Marco Bellini1, Gianpaolo Romano1, Giovanni Alfieri1, Manuel Belanche1, Lars Knoll1, Enea Bianda2, Elena Mengotti21ABB Power Grids Switzerland Ltd., Switzerland; 2ABB Switzerland Ltd., Switzerland

6.5kV Silicon Carbide MOSFETs with 5kV RB Safe Operating Area and MOS-Channel Surge CapabilityYulieth Arango1, Gianpaolo Romano1, Andrei Mihaila1, Marco Bellini1, Chunlei Liu1, Peter Steimer1, Stephan Wirths1, Lars Knoll1, Enea Bianda2

1ABB Power Grids Switzerland Ltd., Switzerland; 2ABB Switzerland Ltd., Switzerland

Short Circuit Robustness and Carrier Lifetime in Silicon Carbide MOSFETsBhagyalakshmi Kakarla, Alexander Tsibizov, Roger Stark, Ivana Kovacevic Badstübner, Ulrike GrossnerETH Zürich, Switzerland

Investigation of Gate and Drain Leakage Currents During the Short Circuit of SiC-MOSFETsChristian Unger, Martin PfostTechnische Universität Dortmund, Germany

Monolithic 4-Terminal 1.2 kV/20 a 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS DiodesKijeong Han1, Aditi Agarwal1, Ajit Kanale1, B. Jayant Baliga1, Subhashish Bhattacharya1, Tzu-Hsuan Cheng1, Douglas Hopkins1, Voshadhi Amarasinghe2, John Ransom2

1North Carolina State University, United States; 2X-FAB, United States




Third Quadrant Operation of 1.2 kV-10 kV SiC Planar MOSFETs: New Device Findings and Converter ValidationRuizhe Zhang, Xiang Lin, Jingcun Liu, Slavko Mocevic, Dong Dong, Yuhao ZhangVirginia Polytechnic Institute and State University, United States

Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive VoltageAditi Agarwal, Ajit Kanale, Kijeong Han, B. Jayant BaligaNorth Carolina State University, United States

14:00 - 15:00 Virtual ZeremoniensaalD1P-D

IC Design (Poster Session)Chair: Nicolas Rouger (CNRS, France)

A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and SensorsStefan Moench1, Richard Reiner1, Patrick Waltereit1, Stefan Müller1, Rüdiger Quay1, Oliver Ambacher1, Ingmar Kallfass2

1Fraunhofer Institute for Applied Solid State Physics, Germany; 2University of Stuttgart, Germany

Active Dual Level Gate Driver for Dead Time and Switching Losses Reduction in Drive SystemsEleonora Mandelli1, Andrea Mariconti1, Stefano Ruzza1, Andrea Baschirotto2

1Infineon Technologies Italy Srl, Italy; 2University of Milan Bicocca, Italy

A Radiation-Hard Gate Driver Circuit for High Voltage ApplicationRongxing Lai, Jian Fang, Xiaoming Guan, Yibo Lei, Hongyue Ma, Bo Zhang, Xiaorong LuoUniversity of Electronic Science and Technology of China, China

Design and Anaysis of the Average Current-Detection Method for Wide Input Voltage Range Constant-Current Lighting LED DriverRongxing Lai, Jian Fang, Qiuliang Jiang, Yarui Wei, Tenglei Wang, Yin Liu, Bo ZhangUniversity of Electronic Science and Technology of China, China

A dVS/dt Noise Immunity Improvement Structure Based on Slope Sensing Technology for 200V High Voltage Gate Drive CircuitSiyuan Yu2, Jing Zhu2, Weifeng Sun2, Yangyang Lu2, Yunqi Wang2, Long Zhang2, Sen Zhang1, Yan Gu1, Nailong He1, Yunwu Zhang3

1CSMC Technologies Corporation, China; 2Southeast University, China; 3Wuxi i-Driver Electronic Co Ltd., China

A GaN-Based Current Sense Amplifier for GaN HEMTs with Integrated Current ShuntsMichael Basler2, Stefan Moench1, Richard Reiner1, Patrick Waltereit1, Rüdiger Quay1, Ingmar Kallfass3, Oliver Ambacher1

1Fraunhofer Institute for Applied Solid State Physics, Germany; 2Fraunhofer Institute of Applied Solid State Physics, Germany; 3University of Stuttgart, Germany

Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETsNicolas Rouger, Yazan Barazi, Marc Cousineau, Fréderic RichardeauUniversité de Toulouse, France

Digital Multi-Value Logic Gates for Monolithic GaN Power ICsMengqi Wang2, Wai Tung Ng2, Jerry Tzou1, Wen-Hsien Huang1, Chang-Hong Shen1, Jia-Ming Shieh1, Wen-Kuan Yeh1

1Taiwan Semiconductor Research Institute, Taiwan; 2University of Toronto, Canada




15:30 - 16:30 Virtual FestsaalD2P-C

GaN Technology and Devices (Poster Session)Chair: Hideyuki Okita (Panasonic, Japan)

Si-Substrate Removal for AlGaN/GaN Devices on PCB CarriersRichard Reiner, Thomas Gerrer, Beatrix Weiss, Patrick Waltereit, Stefan Moench, Dirk Meder, Matthias Sinnwell, Michael Dammann, Rüdiger Quay, Oliver AmbacherFraunhofer Institute for Applied Solid State Physics, Germany

Low-Temperature Accelerated Gate Reliability of Schottky-Type p-GaN Gate HEMTsJiabei He, Jin Wei, Zheyang Zheng, Song Yang, Yang Li, Baoling Huang, Kevin J. ChenHong Kong University of Science and Technology, Hong Kong

Negative Dynamic RON in Vertical GaN PiN Diode: the Impact of Conductivity ModulationShaowen Han, Shu Yang, Kuang ShengZhejiang University, China

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) EffectRuiyuan Yin, Yue Li, Cheng Wen, Yunyi Fu, Yilong Hao, Maojun Wang, Bo ShenPeking University, China

Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area CrystallizationYosuke Kajiwara, Aya Shindome, Akira Mukai, Hiroshi Ono, Daimotsu Kato, Masahiko Kuraguchi, Shinya NunoueToshiba Corporation, Japan

Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain Under Hard and Soft SwitchingShaocheng Li, Shu Yang, Shaowen Han, Kuang ShengZhejiang University, China

Remarkable Breakdown Voltage on AlN/AlGaN/AlN Double HeterostructureIdriss Abid3, Riad Kabouche3, Farid Medjdoub3, Sven Besendörfer2, Elke Meissner2, Joff Derluyn1, Stefan Degroote1, Marianne Germain1, Hideto Miyake4

1EpiGaN, Belgium; 2Fraunhofer Institute for Integrated Systems and Device Technology, Germany; 3Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, France; 4Mie University, Japan

Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs Under Single and Repetitive TestsJiahui Sun, Jin Wei, Zheyang Zheng, Gang Lyu, Kevin J. ChenHong Kong University of Science and Technology, China

Electrostatic Discharge (ESD) Behavior of p-GaN HEMTsYajie Xin, Wanjun Chen, Ruize Sun, Yijun Shi, Chao Liu, Yun Xia, Fangzhou Wang, Xiaorui Xu, Qi Shi, Yuan Wang, Xiaochuan Deng, Qi Zhou, Zhaoji Li, Bo ZhangUniversity of Electronic Science and Technology of China, China

Impacts of High Temperature Annealing Above 1400°C Under N2 Overpressure to Activate Acceptors in Mg-Implanted GaNHideki Sakurai1, Tetsuo Narita2, Kazufumi Hirukawa1, Shinji Yamada1, Akihiko Koura3, Keita Kataoka2, Masahiro Horita1, Nobuyuki Ikarashi1, Michal Bockowski1, Jun Suda1, Tetsu Kachi11Nagoya University, Poland; 1Nagoya University, Japan; 2Toyota Central R&D Labs., Japan; 3ULVAC Technologies, Inc., Japan

A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold VoltageHan Xu, Jin Wei, Ruiliang Xie, Zheyang Zheng, Kevin J. ChenHong Kong University of Science and Technology, Hong Kong

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility TransistorsRan Zhou2, Lin Li1, Wei Zhao2, Zhaoliang Liao1, Minh Nguyen2, Moritz Nunnenkamp2, Evert Houwman2, Gertjan Koster2, Guus Rijnders2, Dirk Gravesteijn2, Raymond Hueting2

1University of Science and Technology China, China; 2University of Twente, Netherlands




Self-Terminated Gate Recessing with a Low Density of Interface States and High Uniformity for Enhancement-Mode GaN HEMTsShuai Su, Yaozong Zhong, Yu Zhou, Hongwei Gao, Xiaoning Zhan, Qian Sun, Hui YangSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN ContactQuanshun Bao, Shu Yang, Kuang ShengZhejiang University, China

Interaction of Hot Electrons with Carbon Doped GaN Buffer in AlGaN/GaN HEMTs: Correlation with Lateral Electric Field and Device FailureRajarshi Roy Chaudhuri, Vipin Joshi, Sayak Dutta Gupta, Mayank ShrivastavaIndian Institute of Science, India

Investigation of p-GaN Tri-Gate Normally-Off GaN Power MOSHEMTsMinghua Zhu, Jun Ma, Elison MatioliÉcole Polytechnique Fédérale de Lausanne, Switzerland

Dielectric Reduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier DiodesYaqiang Liao2, Tao Chen1, Jia Wang2, Yuto Ando2, Xu Yang2, Hirotaka Watanabe2, Jun Hirotani2, Maki Kushimoto2, Manato Deki2, Atsushi Tanaka2, Shugo Nitta2, Yoshio Honda2, Kevin J. Chen1, Hiroshi Amano2

1Hong Kong University of Science and Technology, China; 2Nagoya University, Japan15:30 - 16:30 Virtual Zeremoniensaal

D2P-D

Module and Package Technology (Poster Session)Chair: Tomoyuki Miyoshi (Hitachi, Ltd., Japan)

The Influence of Mechanical Property on the Heat-Cycle Reliability of Sintered Silver Die AttachKeisuke Wakamoto2, Yo Mochizuki1, Takukazu Otsuka2, Ken Nakahara2, Takahiro Namazu1

1Aichi institute of Technology, Japan; 2ROHM Co., Ltd., Japan

Fan-Out-Package-Embedded Coupled Inductors for Integrated Voltage ConversionYixiao Ding1, Xiangming Fang2, Rongxiang Wu3, Johnny Kin On Sin1

1Hong Kong University of Science and Technology, Hong Kong; 2Shenzhen CoilEasy Technologies Co., Ltd., China; 3University of Electronic Science and Technology of China, China

Experimental Verification of the Junction Temperature Distribution Within Press Pack IGBTsYiming Zhang, Erping Deng, Zhibin Zhao, Jie Chen, Shi Fu, Xiang CuiNorth China Electric Power University, China

SiC MOS Power Module in Direct Pressed Die Technology and Some Challenges for ImplementationIgor Kasko, Sven Berberich, Matthias Spang, Stefan OehlingSemikron Elektronik GmbH & Co. KG, Germany

Strapped Cu Interconnect for Enhancing Electromigration Limit for Power Device ApplicationYoung-Joon Park, Jungwoo Joh, Jayhoon Chung, Srikanth KrishnanTexas Instruments Inc, United States

Optimization of Automotive SiC-Sixpack Converter System with New Gate Connection for SiC Devices and New Integrated Discharge Unit for Functional SafetySven Buetow1, Roland Bittner1, Sandro Bulovic1, Reinhard Herzer1, Johannes Klier1, Nathalie Becker2

1Semikron Elektronik GmbH & Co. KG, Germany; 2Technische Universität Ilmenau, Germany

Investigation on the Impact of Thermo-Mechanical Stress on the Humidity Ruggedness of IGBTs by Means of Consecutive PCT and H3TRB TestingFelix Hoffmann2, Michael Hanf2, Nando Kaminski2, Stefan Schmitt1

1Semikron Elektronik GmbH & Co. KG, Germany; 2University of Bremen, Germany

A Mission-Profile-Based Tool for the Reliability Evaluation of Power Semiconductor Devices in Hybrid Electric VehiclesIonut Vernica, Huai Wang, Frede BlaabjergAalborg University, Denmark




Silicon-Based Ultimate Miniature Magnetic Inductors Technology for High-Efficiency DC-DC ConversionLulu Peng, Zishan Ali, Lawrence Selvaraj, Chor Shu Cheng, Yong Chau Ng, Nur Aziz Yosokumoro, Lothar Lehmann, Patrick Rohlfs, Marcel WielandGLOBALFOUNDRIES Singapore Pte. Ltd., Singapore

Tools for Broadband Electromagnetic Modeling of Power Semiconductor Packages and External Circuit LayoutsIvana Kovacevic Badstübner1, Ulrike Grossner1, Dan Popescu2

1ETH Zürich, Switzerland; 2IFAG PMM ACDC RDA TI CC, Infineon Technologies AG, Germany

Prototype of Edge Computing IPM with Hardware Artificial Neural Network Soft Sensor and Controller for Parallel Connected IGBT Current DistributionXiao Zeng, Zehong Li, Jiali Wan, Jinping Zhang, Wei Gao, Min Ren, Zhaoji Li, Bo ZhangUniversity of Electronic Science and Technology of China, China

Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy LaminateUtkarsh Mehrotra, Tzu-Hsuan Cheng, Ajit Kanale, Aditi Agarwal, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya, Douglas HopkinsNorth Carolina State University, United States

17:00 - 18:00 Virtual FestsaalD3P-C

Low Voltage Power Devices and Power IC Technology (Poster Session)Chair: Sang Gi Lee (DB Hitek, Korea)

Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added CostJaroslav Pjencak1, Johan Janssens3, Moshe Agam2, Ladislav Seliga1, Weize Chen2

1ON Semiconductor, Czech Rep.; 2ON Semiconductor, United States; 3ON Semiconductor, Belgium

Investigating the Highly Tolerant LDMOS Cell Array Design Against the Negative Carrier Injection and the ESD EventsKanako Komatsu, Daisuke Shinohara, Mariko Shimizu, Yoshiaki Ishii, Toshihiro Sakamoto, Koji Yonemura, Fumitomo MatsuokaToshiba Electronic Devices & Storage Corporation, Japan

A New Generation of Power Diode: Charge Coupled Field Effect Rectifier Diode (CC-FERD)Shin Phay Lee2, Voon Cheng Ngwan2, Frederic Gautier1, Frederic Lanois1

1STMicroelectronics, France; 2STMicroelectronics, Singapore

A Self-Protected 800V JFET with 6kV HBM Robustness in 0.25 um BCDArash Elhami Khorasani, Mark GriswoldON Semiconductor, United States

Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS with Sandwich N-P-N Layer: Toward High-Performance and High-ReliabilityMing Qiao2, Zhangyi’an Yuan2, Yi Li2, Xin Zhou2, Feng Jin1, Jiye Yang1, Ying Cai1, Zhaoji Li2, Bo Zhang2

1Shanghai Huahong Grace Semiconductor Manufacturing Corporation, China; 2University of Electronic Science and Technology of China, China

A 0.25 µm 700 V BCD Technology with Ultra-Low Specific On-Resistance SJ-LDMOSNailong He1, Sen Zhang1, Xuhan Zhu2, Xuchao Li1, Hao Wang1, Wentong Zhang2, Boyong He1

1CSMC Technologies Corporation, China; 2University of Electronic Science and Technology of China, China

The Floating NBL Architecture: Enabler of a Quasi-SOI ProcessJohan JanssensON Semiconductor, Belgium

Investigation of the Breakdown Voltage Degradation Under Hot-Carrier Injection in STI-Based PchLDMOS TransistorsHirotaka Kasai, Daisuke Shinohara, Mariko Shimizu, Yoshiaki Ishii, Kanako Komatsu, Toshihiro Sakamoto, Koji Yonemura, Fumitomo MatsuokaToshiba Electronic Devices & Storage Corporation, Japan




Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose RadiationGuangan Yang1, Wangran Wu1, Pengyu Tang1, Jing Yang1, Siyang Liu1, Long Zhang1, Weifeng Sun1, Xinyao Zhang2

1Southeast University, China; 2Xinjiang Technical Institute of Physics and Chemistry, China

Partial SOI as a HV Platform Technology for Power Integrated CircuitsAlexander Hölke3, Elizabeth Kho Ching Tee3, Marina Antoniou2, Florin Udrea1

1University of Cambridge, United Kingdom; 2University of Warwick, United Kingdom; 3X-FAB Sarawak Sdn. Bhd., Malaysia

Floating Body Ring Termination for Trench Field Plate Power MOSFETsTanuj Saxena, Vishnu Khemka, Bernhard Grote, Ganming Qin, Moaniss ZitouniNXP Semiconductors N.V., United States

Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-Classical and Quantum AnalysisAli Saadat2, Pratik Vyas2, Maarten Van De Put2, Massimo Fischetti2, Hal Edwards1, Wiliam Vandenberghe2

1Texas Instruments Inc, United States; 2University of Texas at Dallas, United States

17:00 - 18:00 Virtual ZeremoniensaalD3P-D

High Voltage Si Devices (Poster Session)Chair: Thomas Laska (Infineon Technologies AG, Germany)

High Switching Controllability Trench Gate Design in Si-IGBTsWataru Saito, Shin-Ichi NishizawaKyushu University, Japan

First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-ResistanceKoji Yano3, Makoto Hashimoto2, Naoki Matsukawa2, Akiko Matsuo2, Akio Mouraguchi2, Manabu Arai2, Naohiro Shimizu1

1Nagoya University, Japan; 2New Japan Radio Corporation, Japan; 3University of Yamanashi, Japan

An Ultralow Loss N-channel RB-IGBT with P-Drift RegionXiaorui Xu, Wanjun Chen, Fangzhou Wang, Ruize Sun, Chao Liu, Yun Xia, Yajie Xin, Qi Zhou, Zhaoji Li, Bo ZhangUniversity of Electronic Science and Technology of China, China

A Comparative Study of Oxidized Spacer Trench and Micro-Pattern Trench Concepts for 1200 V IGBTsAlexander Philippou1, Roman Baburske1, Thorsten Arnold1, Ilaria Imperiale1, Erich Griebl1, Hans-Jürgen Thees2, Philipp Ross1, Frank Wolter1, Franz-Josef Niedernostheide1

1Infineon Technologies AG, Germany; 2Infineon Technologies Dresden GmbH & Co. KG, Germany

Simulation of a Short-Circuit Rugged Trench IGBT with a JFET Connected to a SiC Schottky RectifierThorsten Arnold1, Rudolf Elpelt1, Hans-Jürgen Thees2, Ilaria Imperiale1, Alexander Philippou1, Franz Hirler1, Moritz Hauf1, Roman Baburske1, Christian Sandow1


Current Filament Behavior in IGBTs of Different Voltage Classes Investigated by Measurements and SimulationsRiteshkumar Bhojani2, Madhu Lakshman Mysore2, Md. Rubel Raihan2, Jens Kowalsky2, Josef Lutz2, Roman Baburske1, Hans-Joachim Schulze1, Franz-Josef Niedernostheide1

1Infineon Technologies AG, Germany; 2Technische Universität Chemnitz, Germany

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density OperationPeng Luo2, Sankara Narayanan Ekkanath Madathil2, Shin-Ichi Nishizawa1, Wataru Saito1

1Kyushu University, Japan; 2University of Sheffield, United Kingdom

1200V RC-IGBT Based on CSTBT™ with Suppressed Dynamic Cres and Partial Lifetime ControlShinya Soneda, Tetsuya Nitta, Atsushi NarazakiMitsubishi Electric Corporation, Japan

High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power ApplicationsTakeshi Mizoguchi, Yoshiko Ikeda, Naoto TsukamotoToshiba Electronic Devices & Storage Corporation, Japan




Analysis of the RC-IGBT Snap-Back Phenomenon on the Switching Performance of Parallel DevicesMunaf Rahimo2, Paula Diaz Reigosa3, Nicola Schulz3, Francesco Iannuzzo1

1Aalborg University, Denmark; 2MTAL GmbH, Switzerland; 3University of Applied Sciences, Windisch, Switzerland

Improvement of Cosmic Ray Robustness in IGBT with Deep-N LayerDaiki Yoshikawa, Masato Hayashi, Hiroaki Yamashita, Yusuke KawaguchiToshiba Electronic Devices & Storage Corporation, Japan

Integrated Gate Commutated Thyristor: from Trench to PlanarUmamaheswara Reddy Vemulapati1, Thomas Stiasny1, Tobias Wikström1, Neophytos Lophitis3, Florin Udrea2

1ABB Power Grids Switzerland Ltd., Switzerland; 2University of Cambridge, United Kingdom; 3University of Nottingham, United Kingdom

Dislocation Propagation in Si 300 mm Wafer During High Thermal Budget Process and its OptimizationRyohei Sato, Koichi Kakimoto, Wataru Saito, Shin-Ichi NishizawaKyushu University, Japan

Design of Dual-Gate Superjunction IGBT Towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-OffJin Wei1, Meng Zhang2, Kevin J. Chen1

1Hong Kong University of Science and Technology, Hong Kong; 2Shenzhen University , China

Current Density and Gate Ringing in Superjunction MOSFETsHyemin Kang, Florin UdreaUniversity of Cambridge, United Kingdom

Opportunities and Challenges of a 1200 V IGBT for 5 V Gate Voltage OperationIlaria Imperiale1, Roman Baburske1, Thorsten Arnold1, Alexander Philippou1, Erich Griebl1, Frank Wolter1, Hans-Jürgen Thees2, Anton Mauder1, Franz-Josef Niedernostheide1, Christian Sandow1


Pushing the Limits of the Maximum Punch-Through Design with an Advanced Buffer for Thin Wafer IGBTsElizabeth Buitrago1, Nick Schneider1, Chiara Corvasce1, Jan Vobecky1, Luca De-Michielis1, Munaf Rahimo2

1ABB Power Grids Switzerland Ltd., Switzerland; 2MTAL GmbH, Switzerland

Advanced High Voltage Reverse Conducting RC-IGBT Technology with Low Losses and Robust Switching PerformanceLiheng Zhu2, Munaf Rahimo1, Haihui Luo2, Qiang Xiao2, Rongzhen Qin2, Haibo Xiao2, Pengfei Liu2

1MTAL GmbH, Switzerland; 2Zhuzhou CRRC Times Semiconductor Co., Ltd., China




FRIDAY, SEPTEMBER 18, 202014:00 - 15:40 Virtual Festsaal

E1L-A

Innovative GaN Devices and ModellingChairs: Tomas Palacios (MIT, USA)

Niels Posthuma (IMEC, Belgium)

14:00 - 14:25 High-Frequency GaN-on-Si Power Integrated Circuits Based on Tri-Anode SBDsLuca Nela, Georgios Kampitsis, Halil Kerim Yildirim, Remco Franciscus van Erp, Jun Ma, Elison MatioliÉcole Polytechnique Fédérale de Lausanne, Switzerland

14:25 - 14:50 700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in DiodeLi Zhang, Jin Wei, Zheyang Zheng, Wenjie Song, Song Yang, Sirui Feng, Kevin J. ChenHong Kong University of Science and Technology, Hong Kong

14:50 - 15:15 Enhancement-Mode GaN p-Channel MOSFETs for Power IntegrationZheyang Zheng1, Wenjie Song1, Li Zhang1, Song Yang1, Han Xu1, Roy Wong2, Jin Wei1, Kevin J. Chen1

1Hong Kong University of Science and Technology, Hong Kong; 2Innoscience (Zhuhai) Technology Co., Ltd., China

15:15 - 15:40 Artificial Neural Network-Based (ANN) Approach for Characteristics Modeling and Prediction in GaN-on-Si Power DevicesSayeem Kutub2, Hong-Jia Jiang2, Nan-Yow Chen1, Wen-Jay Lee1, Chia-Yung Jui1, Tian-Li Wu2

1National Center for High Performance Computing, Taiwan; 2National Chiao Tung University, Taiwan

14:00 - 15:40 Virtual ZeremoniensaalE1L-B

Power Cycling Tests for SiC DevicesChairs: Bassem Mouawad (University of Nottingham, UK)

Yang Xu (Tesla, USA)

14:00 - 14:25 Impact of Device Design on the Power Cycling Capability of Discrete SiC MOSFETs at Different Temperature SwingsFelix Hoffmann, Nando KaminskiUniversity of Bremen, Germany

14:25 - 14:50 Power Cycling Performance and Lifetime Estimation of 1700V SiC MPS Diode Modules with Multiple Chips Connected in ParallelFelix Hoffmann, Nando KaminskiUniversity of Bremen, Germany

14:50 - 15:15 Power Cycling Capability Comparison of Si and SiC MOSFETs Under Different Conduction ModesJie Chen, Erping Deng, Zixuan Zhao, Yuxuan Wu, Yongzhang HuangNorth China Electric Power University, China

15:15 - 15:40 Measurement Error Caused by the Square Root t Method Applied to IGBT Devices During Power Cycling TestErping Deng, Josef LutzTechnische Universität Chemnitz, Germany

16:15 - 17:30 Virtual FestsaalE2L-A

Vertical Low Voltage DevicesChairs: Mark Gajda (Nexperia, UK)

Kenya Kobayashi (Toshiba Electronic Devices & Storage, Japan)

16:15 - 16:40 Evolution of Reverse Recovery in Trench MOSFETsAlessandro Ferrara2, Ralf Siemieniec2, Urban Medic2, Michael Hutzler2, Oliver Blank2, Timothy Henson1

1Infineon Technologies Americas Corp., United States; 2Infineon Technologies Austria AG, Austria




16:40 - 17:05 Multi-Trench-Gate Cell Concept for Low Voltage Superjunction Power MOSFETsKatsumi Eikyu, Atsushi Sakai, Tomohiro Yamashita, Akihiro Shimomura, Hiroshi Yanagigawa, Kazuhisa MoriRenesas Electronics Corporation, Japan

17:05 - 17:30 Analysis and Design Considerations of Low-Voltage Trench MOSFET for Inductive Load Switching ApplicationsRadim Spetik2, Shuji Fujiwara1, Ihsiu Ho3, Jifa Hao3, Aakash Arora3, Matej Blaho2, Ladislav Seliga2, Roman Malousek2, Filip Kudrna2, Santosh Menon3, Bruce Greenwood3, Michael Thomason3, B. Williams3

1ON Semiconductor, Japan; 2ON Semiconductor, Czech Rep.; 3ON Semiconductor, United States17:30 - 18:00 Virtual Festsaal

CLOSING SESSIONCharitat and Best Poster AwardOliver Häberlen, General Chair (Infineon Technologies, Austria)Nando Kaminski, Technical Program Chair (University of Bremen, Germany)

Closing RemarksOliver Häberlen, General Chair (Infineon Technologies, Austria)

ISPSD 2021 AnnouncementKimimori Hamada, General Chair ISPSD 2021 (PDPlus LLC, Japan)

Enabling power applications with extremely low losses and high switching speed

• 150 Silicon Carbide products released

• Voltage range from 650 V to 1700 V

• Design support: models, reference designs, application support

• World-wide support teams




CONFERENCE COMMITTEES

ChairNando Kaminski, University of Bremen (Germany)

HIGH VOLTAGE POWER DEVICES & TECHNOLOGY (HV)

Category ChairThomas Laska, Infineon Technologies (Germany)

MembersMarina Antoniou, University of Warwick (UK)

Giovanni Breglio, University of Naples Federico II (Italy)

Chiara Corvasce, ABB (Switzerland)

Shigeto Honda, Mitsubishi Electric Corporation (Japan)

David Liu, TSMC (Taiwan)

Xiaorong Luo, University of Electronic Science and Technology of China (China)

Yuichi Onozawa, Fuji Electric (Japan)

Wataru Saito, Kyushu University (Japan)

Yi Tang, Starpower Semiconductor (China)

Jun Zeng, MaxPower Semiconductor (USA)

LOW VOLTAGE POWER DEVICES AND POWER IC TECHNOLOGY (LVT)

Category ChairTakahiro Mori, Renesas Electronics Corp. (Japan)

MembersRiccardo Depetro, STMicroelectronics (Italy)

Hiroki Fujii, Samsung Electronics (Korea)

Mark Gajda, Nexperia (UK)

David Tsung-Yi Huang, Leadtrend Technology Corp. (Taiwan)

Kenya Kobayashi, Toshiba Electronic Devices & Storage Corporation (Japan)

Sang-Gi Lee, Dongbu HiTek‘s (Korea)

Amit Paul, ON Semiconductor (USA)

Ronghua Zhu, NXP Semiconductors (USA)

ORGANIZING COMMITTEE

General ChairOliver Häberlen, Infineon Technologies (Austria)

Technical Program ChairNando Kaminski, University of Bremen (Germany)

Past General ChairKuang Sheng, Zhejiang University (China)

Past Technical Program ChairKevin Chen, HKUST (China)

Vice General ChairsKimimori Hamada, PDPlus LLC (Japan)Wai Tung Ng, University of Toronto (Canada)

Short Course ChairUlrike Grossner, ETH Zurich (Switzerland)

Local Arrangement ChairPavla Hlinkova, GUARANT International (Czech Republic)

TECHNICAL PROGRAM COMMITTEE




POWER IC DESIGN (ICD)

Category ChairNicolas Rouger, CNRS (France)

MembersKatsumi Eikyu, Renesas Electronics Corp. (Japan)

Kenji Hara, Hitachi (Japan)

Xin Ming, University of Electronic Science and Technology of China (China)

Wai Tung Ng, University of Toronto (Canada)

Kohei Onizuka, Toshiba Corporate R&D Center (Japan)

John Pigott, NXP Semiconductors (USA)

Budong (Albert) You, Silergy Corp. (China)

Alessandro Zafarana, ON Semiconductor (Italy)

Jing Zhu, Southeast University (China)

GaN AND III/V COMPOUND MATERIALS (GaN)

Category ChairTom Tsai, TSMC (Taiwan)

MembersSameh Khalil, Infineon Technologies (USA)

Yang Liu, Sun Yat-sen University (China)

Elison Matioli, EPFL (Switzerland)

Yoshinao Miura, AIST (Japan)

Peter Moens, ON Semiconductor (Belgium)

Hideyuki Okita, Panasonic (Japan)

Tomas Palacios, Massachusetts Institute of Technology (USA)

Sameer Pendharkar, Texas Instruments (USA)

Niels Posthuma, IMEC (Belgium)

Shu Yang, Zhejiang University (China)

SiC AND OTHER MATERIALS (SiC)

Category ChairDavid Sheridan, Alpha & Omega Semiconductor (USA)

MembersIan Chan, Cyntec (Taiwan)

Chwan Ying Lee, Hestia-Power Inc. (Taiwan)

Kevin Matocha, Littelfuse (USA)

Andrei Petru Mihaila, ABB (Switzerland)

Naruhisa Miura, Mitsubishi Electric Corporation (Japan)

Yasuhiko Onishi, Fuji Electric (Japan)

Dethard Peters, Infineon Technologies (Germany)

Sei-Hyung Ryu, Wolfspeed (USA)

David Sheridan, Alpha & Omega Semiconductor (USA)

Sid Sundaresan, GeneSiC (USA)

Victor Veliadis, North Carolina State University (USA)

Yoshiyuki Yonezawa, AIST (Japan)

Jon Zhang, Fudan University (China)

MODULE AND PACKAGE TECHNOLOGIES (PK)

Category ChairIchiro Omura, Kyushu Institute of Technology (Japan)

MembersSven Berberich, Semikron (Germany)

Tomoyuki Miyoshi, Hitachi (Japan)

Bassem Mouawad, Nottingham University (UK)

Yang Xu, Tesla (USA)

Zhenqing Zhao, Delta Power Electronic Research Center (China)

ADVISORY COMMITTEE MEMBERS

Gehan Amaratunga, Cambridge University (UK)

Tat-Sing Paul Chow, Rensselaer Polytechnic Institute (USA)

Mohamed Darwish, MaxPower Semiconductor (USA)

Don Disney, Infineon Technologies (Germany)

Dan Kinzer, Navitas Semiconductor (USA)

Leo Lorenz, ECPE (Germany)

Gourab Majumdar, Mitsubishi Electric (Japan)

Peter Moens, ON Semiconductors (Belgium)

Mutsuhiro Mori, Hitachi Power Semiconductor Device, Ltd. (Japan)

Hiromichi Ohashi, NPERC-J (Japan)

Yasukazu Seki, Fuji Electric Co., Ltd. (Japan)

John Shen, Illinois Institute of Technology (USA)

Kuang Sheng, Zhejiang University (China)

M. Ayman Shibib, Vishay Siliconix (USA)

Johnny Sin, Hong Kong University of Science and Technology (China)

Jan Šonský, NXP Semiconductors (Belgium)

Yoshitaka Sugawara, Ibaraki University (Japan)

Richard K. Williams, Adventive Technology (USA)

Toshiaki Yachi, Tokyo University of Science (Japan)




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Best performance for next generation SiC power electronics to address global mega trendsAIX G5 WW CElectric vehicles: on board chargers, power invertersInfrastructure: charging stationsRenewables: solar and windIndustrial: motor drives, power suppliesPower distribution: HVDC


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ACKNOWLEDGEMENTS The Organizing Committee would like to express its gratitude to all institutions and companies that have supported

the 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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TECHNICALLY CO-SPONSORED BY

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FINAL PROGRAM www.ispsd2020.com

SEPTEMBER 13 – 182020

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