ITRS Summer Conference 2007 Moscone Center San Francisco, CA 1

Work in Progress: Not for Distribution

2007 ITRS

Emerging Research Materials

[ERM]

July 18, 2007

Michael Garner – IntelDaniel Herr – SRC

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 2

Work in Progress: Not for Distribution

2006 - 2007 ERM ParticipantsHiro Akinaga AISTBob Allen IBMNobuo Aoi MatsushitaKoyu Asai RenesasYuji Awano FujitsuDaniel-Camille Bensahel STMChuck Black BNLAgeeth Bol IBMBill Bottoms NanonexusGeorge Bourianoff IntelAlex Bratkovski HPMarie Burnham FreescaleWilliam Butler U. of AlabamaJohn Carruthers Port. State Univ.

Zhihong Chen IBM

U-In Chung SamsungRinn Cleavelin TIReed Content AMDHongjie Dai Stanford Univ.Jean Dijon LETIJoe DeSimone UNCTerry Francis T A Francis Assoc.Chuck Fraust SIASatoshi Fujimura TOKMichael Garner Intel Emmanuel Giannelis Cornell Univ.Michael Goldstein IntelJoe Gordon IBMJim Hannon IBM

Craig Hawker UCSBRobert Helms UTDRudi Hendel AMATSusan Holl Spansion Dan Herr SRCGreg Higashi IntelHarold Hosack SRCJim Hutchby SRCKohei Ito Keio Univ.James Jewett IntelAntoine Kahn Princeton Univ. Sergie Kalinin ORNLTed Kamins HPMasashi Kawasaki Tohoku Univ.Roger Lake U.C. RiversideSteve Knight NISTGertjan Koster Stanford Univ.Louis Lome IDA Cons.Francois Martin LETIFumihiro Matsukura Tohoku UAllan MacDonald Texas A&MAndrew Millis Columbia Univ.Bob Miller IBMChris Murray IBMPaul Nealey U. Wisc.We-Xin Ni NNDLFumiyuki Nihey NECDmitri Nikonov IntelYoshio Nishi StanfordChris Ober Cornell Univ.Brian Raley FreescaleRamamoorthy Ramesh U.C. BerkeleyNachiket Raravikar IntelMark Reed Yale Univ.

Curt Richter NISTDave Roberts Air ProductsFrancis Ross IBMTadashi Sakai ToshibaSadasivan Shankar IntelLars Samuelson Lund UniversityMitusru Sato TOKJohn Henry Scott NISTFarhang Shadman U Az.Sadasivan Shankar IntelAtsushi Shiota JSRMicroReyes Sierra U Az.Kaushal Singh AMATSusanne Stemmer UCSBNaoyuki Sugiyama TorayShinichi Tagaki U of TokyoKoki Tamura TOKYasuhide Tomioka AISTEvgeny Tsymbal U. of NebraskaEmanuel Tutuc IBMKen Uchida ToshibaJohn Unguris NISTBert Vermiere Env. Metrol. Corp.Yasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLARainer Waser Aacken Univ.C.P. Wong GA Tech. Univ.H.S. Philip Wong Stanford UniversityWalter Worth ISEMATECHHiroshi Yamaguchi NTTToru Yamaguchi NTTIn Kyeong Yoo SamsungVictor Zhirnov SRC

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 3

Work in Progress: Not for Distribution

1.00E+00

1.00E+02

1.00E+04

1.00E+06

1.00E+08

1.00E+10

1.00E+12

1.00E+14

1.00E+16

1.00E+18

1.00E+20

1.00E+22

1.00E+24

1.00E+26

1945 1955 1965 1975 1985 1995 2005 2015 2025 2035 2045 2055

Ato

ms

pe

r B

it

Macromolecular Scale Devices are on the ITRS Horizon

ITRS

Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).

Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materialsBenign and sustainable nanomaterials

Macromolecular Scale Devices

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 4

Work in Progress: Not for Distribution

Emerging Research Materials [ERM]

Develop a cross-cutting ERM Chapter in 2007 Goal: Identify critical ERM technical and timing

requirements for ITWG identified applications Consolidate materials research requirements for:

University and government researchers Chemists, materials scientists, etc.

Industry Researchers Semiconductor Chemical, material, and equipment suppliers

Align ERM requirements with ITWG Needs Host workshops to assess ERM properties, potential

applications, and research directions

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 5

Work in Progress: Not for Distribution

Low Dimensional Materials Table (1/4)

Low Dimensional Materials

Nanowires for FET channels

Nanowires for interconnections

Nanowires for vias

Operating Mechanism Drift/Diffusion Drift Drift

Material System Si, Ge, or III-V compounds

Metal (esp. Cu) Metal (esp. Cu) or Si or Ge

Synthetic Method CVD (chemical vapor deposition)

CVD or ECD (electrochemical deposition)

CVD or ECD

Mat

eria

ls a

nd

Tec

hn

iqu

es

Critical Material Property Diameter. doping

Resistance Resistance

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 6

Work in Progress: Not for Distribution

Demonstration target /Goal 3-200 nm M1 half pitch (14 nm ) [Footnote i])

~Via size (14 nm) Diameter

Demonstrated

Demonstration target /Goal 10% 3 0.2 M1 half pitch Not critical Diameter Control Demonstrated

Demonstration target /Goal 5% diameter 5% diameter (Footnote [ii])

Not critical Line edge roughness

Demonstrated

Demonstration target /Goal ~10^-2 radians (0.6 deg)

~10^-3 radians (0.06 deg)

Angular alignment - repositioned Demonstrated

Demonstration target /Goal 0.2 half pitch 0.2 half pitch 0.2 half pitch Registration

Demonstrated

Demonstration target /Goal Any Any (100) Crystal orientation Demonstrated

Demonstration target /Goal Depends on diameter

None (metal) Bulk

ITR

S P

erfo

rman

ce

Req

uir

emen

ts

Band gap Demonstrated

i Should node (14 nm) be indicated in table entry or not (or perhaps in footnote)? ii Surface scattering from roughness might limit conductance.

Low Dimensional Materials Table (2/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 7

Work in Progress: Not for Distribution

Demonstration target /Goal <10% NW resistance

<10% NW resistance

<10% NW resistance Contact

resistance Demonstrated

Demonstration target /Goal

Si: Bulk for D>20 nm; >Bulk for D<5nm

Cu: Bulk

Cu: Bulk Si: Bulk for D>20 nm; >Bulk for D<5nm

Thermal expansion

Demonstrated

Demonstration target /Goal Adhesion

Demonstrated

Demonstration target /Goal Critical <10^11 cm-2 Cu: N/A

Cu: N/A Si: Important <10^12/cm2

Inte

rfac

e C

ompa

tibi

lity

Surface States

Demonstrated

Low Dimensional Materials Table (3/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 8

Work in Progress: Not for Distribution

Demonstration target /Goal Reliability

Demonstrated

Demonstration target /Goal Repeatability

Demonstrated

Demonstration target /Goal Effective throughput Demonstrated

Demonstration target /Goal Non-Au catalyst

Temperature T<450C

Temperature T<450C CMOS

compatibility Demonstrated

Demonstration target /Goal Bulk Bulk Bulk Electromigration Demonstrated

Demonstration target /Goal Bulk Maximum current density Demonstrated

Demonstration target /Goal Etch behavior Demonstrated

Demonstration target /Goal

Mat

eria

ls I

nte

grat

ion

Demonstrated

Comments

Research activity [AE]

Low Dimensional Materials Table (4/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 9

Work in Progress: Not for Distribution

Emerging Research Materials [ERM] MatrixMat.

TWG

Low Dimensional

Materials

Macro-molecules

Spin Materials

Complex Metal

Oxides

Hetero-structures & Interfaces

Directed Self-

assembly

ESH Metrol.&

Model’g

ESH ERD

FEP

INT

LIT

MET

M&S

PIDS

PKG

Detailed TWG Requirements or alignment

General TWG Interest or alignment

No TWG Interest to Date

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 10

Work in Progress: Not for Distribution

Emerging Material Needs: ESH

Metrology needed to detect the presence of nanoparticles

Research needed on potential bio-interactions of nanoparticles

Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercialization

Leverage Existing Research and Standards Activities

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 11

Work in Progress: Not for Distribution

Emerging Material Needs: ERD

Device State* Emerging Materials

1D Charge State (Low Dimensional Materials) Molecular State (Macromolecules) Spin State (Spin Materials and CMO**) Phase State (CMO**and Heterointerfaces) Memory

– Fuse/anti-fuse, ionic, electronic effect, Ferroelectric FET, etc.

All Devices have critical interface requirements

*Representative Device Applications**CMO = Complex Metal Oxides

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 12

Work in Progress: Not for Distribution

Deterministic Doping

Selective Processes/Cleans

Macromolecules

Self-assembling materials and processes

Emerging Material Needs: FEPConductance variability reduced from 63% to 13% by controlling dopant numbers and roughly ordered arrays; Conductance due to implant positional variability within circular implant regions of the ordered array ~13%.

S D

Intel

From Shinada et. Al., “Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays”, Nature, 437 (20) 1128-1131 (2005) [Waseda University]

1

10

100

1000

10000

2003

2004

2005

2006

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

2018

2019

2020

# o

f ch

an

nel

ele

ctr

on

s

D. Herr, with data from the 2005 ITRS

~2014

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 13

Work in Progress: Not for Distribution

10 100 10000

1

2

3

4

5

sidewall

grain boundary

bulk resistivity

Res

istiv

ity [µ

cm

]

Line width [nm]

Emerging Material Needs: INTVias Multi-wall CNT Higher density Contact Resistance Adhesion

Interconnects Metallic Alignment Contact Resistance

Dielectrics Novel ILD Materials

Y. Awano, Fujitsu

H. Dai, Stanford Univ.

Quartz Crystal Step Alignment

Ref. 2005 ITRS, INT TWG, p. 22

ERMs Must Have Lower Resistivity

Cu

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 14

Work in Progress: Not for Distribution

Resist: Unique Properties Immersion: Low leaching, low

surface energy, high nD

EUV: Low outgassing, high speed and flare tolerant

Imprint Materials Low viscosity Easy release

Directed Self-Assembly Resolution, LER, density,

defects, required shapes, throughput, registration and alignment

Emerging Material Needs: LIT

OR

RO

RO

OR RO

OR

OR

RO

OR

OR

RO

OR

Molecular Glasses and PAGS, Ober, Cornell

Macromolecular Architectures

Polymer Design, R. Allen, IBM

Directed di-block Copolymer SelfAssembly P. Nealey, U. Wisc.

Dendrimers, Frechet, UC-B

Sublithographic resolution and registration Ross, MIT

25 nm L/S

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 15

Work in Progress: Not for Distribution

Design Pattern Requirements forDirected Self-Assembly

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 16

Work in Progress: Not for Distribution

Emerging Material Needs: MET Correlate nanostructure to macro-scale properties:

bandgap, spin, optical, contact resistance, adhesion, mobility, dynamic properties, and nano-mechanical properties Methods that resolve and separate surface from bulk properties Nondestructive 3D imaging of embedded interface,

nanostructure, and atomic scale matrix properties

Atomic and nanoscale structure, including defects, of low Z materials

In-Situ measurements that enable enhanced synthetic and process control

Uniformity measurements of nanoscale properties over large areas

Nanoparticle monitors for ES&H, which include size, dose, and composition.

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 17

Work in Progress: Not for Distribution

Emerging Material Needs: M&SModeling of material synthesis-structure-

property correlations Interface properties and engineering Low dimensional material synthesis & properties Macromolecules and composites by design Spin material properties Strongly correlated electron material properties

Long range and dynamic

Integrated measurement and modeling tools De-convolve nm scale metrology signals,

Include sample preparation and contaminationDeconvolve probe - sample interactions

Metrology and modeling must be able to characterize and predict performance and reliability

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 18

Work in Progress: Not for Distribution

Emerging Material Needs: A&P

Thermal Nanotubes

High Density Power Delivery Capacitors

Dielectrics: High K

Self Assembly

Interconnects: Nanotubes or Nanowires

Package Thermo-Mechanical

Substrate: Nanoparticles, Macromolecules

Adhesives: Macromolecules, Nanoparticles

Chip Interconnect: Nanoparticles

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 19

Work in Progress: Not for Distribution

Difficult ERM Challenges ≤16nm

Summary of Issues

CMOS Compatibility Integration for device extensibilityMaterial and process temperature compatibility

Control of nanostructures and properties

Ability to pattern sub 20nm structures in resist or other manufacturing related patterning materials Control of surfaces & interfacesControl of CNT properties, bandgap distribution, and metallic fractionControl of stoichiometry & vacancy composition in complex metal oxidesControl and identification of nanoscale phase segregation in spin materialsControl of growth and thin hetero-interface strain Data/models that enable quantitative structure-property correlations and robust material-by-designControl of interface properties, e.g. electromigration

Controlled self assembly of nanostructures

Placement of nanostructures, such as CNTs, nanowires, or quantum dots, in precise locations for devices, interconnects, and other electronically useful components

Control of line width of self assembled patterning materialsControl of registration and defects in self assembled materials

Characterization of nanostructure-property correlations

Correlation of the interface structure, electronic and spin properties of interfaces with low dimensional materials

Characterization of low atomic weight structures and defects Characterization of spin concentration in materialsCharacterization of vacancy concentration and its effect on the properties of complex oxides3D molecular and nano-material structure-property correlations

Characterizing properties of embedded interfaces and matrixes.

Characterizing the electrical contact of embedded molecules. Characterizing the roles of vacancy and hydrogen at the interface of complex oxides vs. propertiesCharacterizing spin interface transportCharacterizing the structure and interface states in complex oxides

Fundamental thermodynamic stability & fluctuations of materials & structures

Geometry, conformation, and interface roughness in molecular and self assembled structuresDevice structure related properties, such as defects and ferromagnetic spinDopant location and device variability

Assessing the ESH impact of emerging materials

Challenges for Characterizing the impact of NanomaterialsEarly, hierarchical assessment of potential ESH impact & issues

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 20

Work in Progress: Not for Distribution

Status of ERM Work: July 2007

Completed the initial round of ERM workshops and joint ITWG meetings

Aligning the projected ERM research requirements with the initial set of ITWG identified potential applications

Developing the ERM chapter framework, section text, and research requirements tables