MD7IC2251NR1 MD7IC2251GNR1
1RF Device DataFreescale Semiconductor, Inc.
RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110--2170 MHz. This multi --stagestructure is rated for 26 to 32 volt operation and covers all typical cellularbase station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:VDD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc,Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
FrequencyGps(dB)
PAE(%)
Output PAR(dB)
ACPR(dBc)
2110 MHz 28.8 38.2 7.1 --34.6
2140 MHz 29.0 37.9 7.1 --36.2
2170 MHz 29.2 37.4 6.9 --36.1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CWOutput Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1)
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Production Tested in a Symmetrical Doherty Configuration• Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters• On--Chip Matching (50 Ohm Input, DC Blocked)• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
• Integrated ESD Protection• 225°C Capable Plastic Package• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Figure 1. Functional Block Diagram Figure 2. Pin Connections
Note: Exposed backside of the package isthe source terminal for the transistors.
Quiescent CurrentTemperature Compensation (2)
VDS1A
RFinA
VGS1A
RFout1/VDS2A
VGS2A
Quiescent CurrentTemperature Compensation (2)
VDS1B
RFinB
VGS1B
RFout2/VDS2B
VGS2B
VDS1A
RFinA
NC
RFinB
RFout1/VDS2A
1234
78
14
VGS1B91011
VGS2AVGS1A
NC
NC
VGS2B
NC
VDS1B
RFout2/VDS2B13
6
12
(Top View)
5
CARRIER (3)
PEAKING (3)
Carrier
Peaking
1. P3dB=Pavg+7.0dBwherePavg is theaverageoutput powermeasuredusinganunclippedW--CDMAsingle--carrier input signalwhereoutputPAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987,Quiescent Current Controlfor theRF IntegratedCircuit DeviceFamily.Go to http://www.freescale.com/rf. SelectDocumentation/ApplicationNotes -- AN1977orAN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
2110--2170 MHz, 12 W AVG., 28 VSINGLE W--CDMA
RF LDMOS WIDEBANDINTEGRATED POWER AMPLIFIERS
MD7IC2251NR1MD7IC2251GNR1
TO--270 WB--14PLASTIC
MD7IC2251NR1
TO--270 WB--14 GULLPLASTIC
MD7IC2251GNR1
Document Number: MD7IC2251NRev. 0, 5/2012
Freescale SemiconductorTechnical Data
© Freescale Semiconductor, Inc., 2012. All rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature (1,2) TJ 225 °C
Input Power Pin 28 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Final Doherty Application
Thermal Resistance, Junction to CaseCase Temperature 78°C, Pout = 12 W CW
Stage 1, 28 Vdc, IDQ1(A+B) = 80 mAStage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc
Case Temperature 89°C, Pout = 50 W CWStage 1, 28 Vdc, IDQ1(A+B) = 80 mAStage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc
RθJC
4.81.5
3.71.0
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1A
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) II
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 -- Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS 10 μAdc
Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS 1 μAdc
Gate--Source Leakage Current(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS 1 μAdc
Stage 1 -- On Characteristics (4)
Gate Threshold Voltage(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th) 1.2 2.0 2.7 Vdc
Gate Quiescent Voltage(VDS = 28 Vdc, IDQ1(A+B) = 80 mAdc)
VGS(Q) 2.7 Vdc
Fixture Gate Quiescent Voltage(VDD = 28 Vdc, IDQ1(A+B) = 80 mAdc, Measured in Functional Test)
VGG(Q) 6.0 7.0 8.0 Vdc
1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.4. Each side of device measured separately.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
3RF Device DataFreescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS 10 μAdc
Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS 1 μAdc
Gate--Source Leakage Current(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS 1 μAdc
Stage 2 -- On Characteristics (1)
Gate Threshold Voltage(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th) 1.2 2.0 2.7 Vdc
Gate Quiescent Voltage(VDS = 28 Vdc, IDQ2A = 260 mAdc)
VGSA(Q) 2.7 Vdc
Fixture Gate Quiescent Voltage(VDD = 28 Vdc, IDQ2A = 260 mAdc, Measured in Functional Test)
VGGA(Q) 5.5 6.3 7.5 Vdc
Drain--Source On--Voltage(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) 0.1 0.24 1.2 Vdc
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA,VGS2B = 1.4 Vdc, Pout = 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 27.6 28.2 32.0 dB
Power Added Efficiency PAE 33.5 36.9 %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.2 6.6 dB
Adjacent Channel Power Ratio ACPR --34.2 --31.5 dBc
Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA,IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
FrequencyGps(dB)
PAE(%)
Output PAR(dB)
ACPR(dBc)
2110 MHz 28.8 38.2 7.1 --34.6
2140 MHz 29.0 37.9 7.1 --36.2
2170 MHz 29.2 37.4 6.9 --36.1
1. Each side of device measured separately.2. Part internally matched both on input and output.3. Measurement made with device in a Symmetrical Doherty configuration.4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
4RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B =1.4 Vdc, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB 40 W
Pout @ 3 dB Compression Point (2) P3dB 58 W
IMD Symmetry @ 18 W PEP, Pout where IMD Third OrderIntermodulation 30 dBc(Delta IMD Third Order Intermodulation between Upper and LowerSidebands > 2 dB)
IMDsym 25 MHz
VBW Resonance Point(IMD Third Order Intermodulation Inflection Point)
VBWres 65 MHz
Quiescent Current Accuracy over Temperaturewith 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3) Stage 1
Stage 2
∆IQT
1.55.0
%
Gain Flatness in 60 MHz Bandwidth @ Pout = 12 W Avg. GF 0.2 dB
Gain Variation over Temperature(--30°C to +85°C)
∆G 0.028 dB/°C
Output Power Variation over Temperature(--30°C to +85°C)
∆P1dB 0.028 dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.3. Refer toAN1977,QuiescentCurrent Thermal TrackingCircuit in theRF IntegratedCircuit Family and toAN1987,QuiescentCurrentControl
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
MD7IC2251NR1 MD7IC2251GNR1
5RF Device DataFreescale Semiconductor, Inc.
Figure 3. MD7IC2251NR1(GNR1) Production Test Circuit Component Layout
MD7IC2251NRev. 1
CUTOUTAREA
VGS1A VGS2A VDS1A
R1
VGS1B VGS2B VDS1BVDS2B
VDS2A
R2
C1
C23C7 C9
C13
C16
C22C8 C10
C15C19
C18C20C17
Z1
R5
R3
R4
C2
C5 C6
C14
C21C12
C11
C3 C4
C
P
Table 6. MD7IC2251NR1(GNR1) Production Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata
C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC
C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC
C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC
C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata
C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC
C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC
C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata
R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay
R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren
Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin
PCB 0.020″, εr = 3.5 RF-35A2 Taconic
6RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
Figure 4. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Layout
MD7IC2251NRev. 1
CUTOUTAREA
VGS1A VGS2A VDS1A
R1
VGS1B VGS2B VDS1BVDS2B
VDS2A
R2
C1
C23C7 C9
C13
C16
C22C8 C10
C15C19
C18C20C17
Z1
R5
R3
R4
C2
C5 C6
C14
C21C12
C11
C3 C4
C
P
Table 7. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata
C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC
C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC
C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC
C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata
C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC
C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC
C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata
R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay
R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren
Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin
PCB 0.020″, εr = 3.5 RF-35A2 Taconic
MD7IC2251NR1 MD7IC2251GNR1
7RF Device DataFreescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
2060
ACPR
f, FREQUENCY (MHz)
Figure 5. Output Peak--to--Average Ratio Compression (PARC)Broadband Performance @ Pout = 12 Watts Avg.
--4
0
--1
--2
--3
31
30.6
--40
39
37
35
33
--30
--32
--34
--36
PAE,POWER
ADDED
EFFICIENCY(%)
Gps,POWER
GAIN(dB) 29.8
29
28.2
27.4
2080 2100 2120 2140 2160 2180 2200 2220
31
--38
--5
ACPR
(dBc)
Figure 6. Intermodulation Distortion Productsversus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10--70
--20
--30
1 100
IMD,INTERMODULATIONDISTORTION(dBc)
--40IM5--U
IM5--L
IM7--LIM7--U
VDD = 28 Vdc, Pout = 18 W (PEP)IDQ1(A+B) = 80 mA, IDQ2A = 260 mA
Figure 7. Output Peak--to--Average RatioCompression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
10
0
--2
--4
OUTPUTCOMPRESSIONAT
0.01%
PROBABILITY
ONCCDF(dB)
5 15 2026
50
46
42
38
34
30
PAE,POWER
ADDED
EFFICIENCY(%)
--1 dB = 7.2 W--2 dB = 9.9 W
--3 dB = 12.5 W
30
ACPR
ACPR
(dBc)
--50
--20
--25
--30
--40
--35
--45
30
Gps,POWER
GAIN(dB)
29
28
27
26
25
24
Gps
30.2
29.4
28.6
27.8
27
Input Signal PAR = 9.9 dB @0.01% Probability on CCDF
3.84 MHz Channel Bandwidth, Input SignalPAR = 9.9 dB @ 0.01% Probability on CCDF
PAE
PARC
25
PAE
PARC
PARC(dB)
Gps
VDD = 28 Vdc, Pout = 12 W (Avg.)IDQ1(A+B) = 80 mA, IDQ2A = 260 mAVGS2B = 1.4 Vdc, Single--Carrier W--CDMA3.84 MHz Channel Bandwidth
--50
--60VGS2B = 1.4 Vdc, Two--Tone Measurements(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L
IM3--U
--6
VDD = 28 Vdc, IDQ1(A+B) = 80 mAIDQ2A = 260 mA, VGS2B = 1.4 Vdcf = 2140 MHz, Single--CarrierW--CDMA
8RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, PowerAdded Efficiency and ACPR versus Output Power
--30
--35
25
31
0
60
PAE,POWER
ADDED
EFFICIENCY(%)
Gps,POWER
GAIN(dB)
30
10 100
ACPR
(dBc)
28
27
--20
--40
--45
--50
Figure 9. Broadband Frequency Response
0
36
1800
f, FREQUENCY (MHz)
30
24
18
1900
GAIN(dB)
Gain
2000 2100 2200 2600
12
29
50
40
30
20
10
6
Gps
VDD = 28 Vdc, IDQ1(A+B) = 80 mAIDQ2A = 260 mA, VGS2B = 1.4 Vdc
PAE
2110 MHz
VDD = 28 VdcPin = 0 dBmIDQ1(A+B) = 80 mAIDQ2A = 260 mAVGS2B = 1.4 Vdc
2300 2400 2500
26
--25
2140 MHz
2170 MHz
Single--Carrier W--CDMA3.84 MHz Channel BandwidthInput Signal PAR = 9.9 dB@ 0.01% Probabilityon CCDF
2140 MHz
2110 MHz
2170 MHz
W--CDMA TEST SIGNAL
100.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA IQ MagnitudeClipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2 4 6 8
PROBABILITY
(%)
W--CDMA. ACPR Measured in 3.84 MHzChannel Bandwidth @ ±5 MHz Offset.Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF
Input Signal
12
--60
--100
10
(dB)
--20
--30
--40
--50
--70
--80
--90
3.84 MHzChannel BW
7.21.8 5.43.60--1.8--3.6--5.4--9 9
f, FREQUENCY (MHz)
Figure 11. Single--Carrier W--CDMA Spectrum
--7.2
--ACPR in 3.84 MHzIntegrated BW
+ACPR in 3.84 MHzIntegrated BW
--10
0
MD7IC2251NR1 MD7IC2251GNR1
9RF Device DataFreescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW
f(MHz)
Zin(Ω)
Zload (1)
(Ω)
Max Output Power
P1dB P3dB
(dBm) (W) PAE (%) (dBm) (W) PAE (%)
2110 68.0 j42.0 7.20 j14.0 45.8 38 52.2 46.4 44 53.1
2140 60.6 j37.0 7.40 j14.4 45.7 37 51.9 46.4 44 52.7
2170 54.0 j31.0 7.30 j14.7 45.7 37 51.6 46.4 44 52.2
(1) Load impedance for optimum P1dB power.
Zin = Impedance as measured from input contact to ground.Zload = Impedance as measured from drain contact to ground.
Figure 12. Carrier Side Load Pull Performance Maximum P1dB Tuning
DeviceUnderTest
OutputLoad PullTuner
Zin Zload
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW
f(MHz)
Zin(Ω)
Zload (1)
(Ω)
Max Power Added Efficiency
P1dB P3dB
(dBm) (W) PAE (%) (dBm) (W) PAE (%)
2110 60.0 j53.0 9.10 j8.80 44.4 28 58.1 45.0 32.0 57.6
2140 54.0 j46.0 8.20 j9.10 44.4 28 57.6 44.9 31.0 57.0
2170 48.0 j39.0 7.90 j9.60 44.4 28 57.4 45.0 32.0 56.7
(1) Load impedance for optimum P1dB efficiency.
Zin = Impedance as measured from input contact to ground.Zload = Impedance as measured from drain contact to ground.
Figure 13. Carrier Side Load Pull Performance Maximum Power Added Efficiency Tuning
DeviceUnderTest
OutputLoad PullTuner
Zin Zload
10RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
PACKAGE DIMENSIONS
MD7IC2251NR1 MD7IC2251GNR1
11RF Device DataFreescale Semiconductor, Inc.
12RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
MD7IC2251NR1 MD7IC2251GNR1
13RF Device DataFreescale Semiconductor, Inc.
14RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
MD7IC2251NR1 MD7IC2251GNR1
15RF Device DataFreescale Semiconductor, Inc.
16RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages• AN1955: Thermal Measurement Methodology of RF Power Amplifiers• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic PackagesEngineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS DevicesSoftware
• Electromigration MTTF Calculator• RF High Power Model• .s2p FileDevelopment Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to theSoftware & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 May 2012 • Initial Release of Data Sheet
MD7IC2251NR1 MD7IC2251GNR1
17RF Device DataFreescale Semiconductor, Inc.
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Document Number: MD7IC2251NRev. 0, 5/2012