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Operation Regions of Bipolar Transistors

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Operation Regions of Bipolar Transistors. Binary Logic States. Digital Logic:. Bipolar transistor as an inverter. Transistor in digital logic pass quickly from the off region to the saturation region. Input Output 1(high V in ) 0(low input) 0 1. - PowerPoint PPT Presentation
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Page 1: Operation Regions of Bipolar Transistors
Page 2: Operation Regions of Bipolar Transistors
Page 3: Operation Regions of Bipolar Transistors
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Operation Regions of Bipolar Transistors

Base-Emitter Junction

Base-Collector Junction

Reverse Bias Forward Bias

Forward Bias

Forward-Active Region

(Good Amplifier)

Saturation Region

(Closed Switch)

Reverse BiasCutoff Region

(Open Switch)

Reverse-Active Region

(Poor Amplifier)

Binary Logic States

Page 9: Operation Regions of Bipolar Transistors
Page 10: Operation Regions of Bipolar Transistors
Page 11: Operation Regions of Bipolar Transistors

Bipolar transistor as an inverter

• Transistor in digital logic pass quickly from the off region to the saturation region.

Input Output

1(high Vin) 0(low input)

0 1

Digital Logic:

Page 12: Operation Regions of Bipolar Transistors

Bipolar NOR logic gateExample 3.11 Determine current and voltage in the circuit 3.43(b)

Rc=1KRB=20KVBE(on)=0.7VVCE(sat)=0.2Vβ=50

Lecture #3

Page 13: Operation Regions of Bipolar Transistors

Biasing for BJT

• Goal of biasing is to establish known Q-point which in turn establishes initial operating region of the transistor.

• For a BJT, the Q-point is represented by (IC, VCE) for an npn transistor or (IC, VEC) for a pnp transistor.

• The Q-point controls values of diffusion capacitance, transconductance, input and output resistances.

• In general, during circuit analysis, we use simplified mathematical relationships derived for a specified operation region, and the Early voltage is assumed to be infinite.

• Two practical biasing circuits used for a BJT are:

– Four-Resistor Bias network

– Two-Resistor Bias network

Page 14: Operation Regions of Bipolar Transistors

The process by which the quiescent output voltage is caused to fall somewhere the cutoff and saturated values is referred to as biasing.

Page 15: Operation Regions of Bipolar Transistors
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Example 3.13

Page 18: Operation Regions of Bipolar Transistors

Q-point has shifted Substantially.Q-point is not stabilizedAgainst the variation.

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Page 31: Operation Regions of Bipolar Transistors

Tolerances - Worst-Case Analysis: Example

• Problem: Find worst-case values of IC and VCE.

• Given data: FO = 75 with 50% tolerance, VA = 50 V, 5 % tolerance on VCC , 10% tolerance for each resistor.

• Analysis:

ICI

E

VEQ

VBE

RE

To maximize IC , VEQ should be maximized, RE should be minimized and opposite for minimizing IC.Extremes of RE are: 14.4 kand 17.6 k

VEQ

VCC

R1

R1R

2

To maximize VEQ, VCC and R1 should be maximized, R2 should be minimized and opposite for minimizing VEQ.

Page 32: Operation Regions of Bipolar Transistors

Tolerances - Worst-Case Analysis: Example (cont.)

Extremes of VEQ are: 4.78 V and 3.31 V

Using these values, extremes for IC are: 283 A and 148 A.

To maximize VCE , IC and RC should be minimized, and opposite for minimizing VEQ.Extremes of VCE are: 7.06 V (forward-active region) and 0.471 V (saturated, hence calculated values for VCE and IC actually not correct)

VCE

VCC

RCI

C R

EI

EV

CC R

CI

C

VEQ

VBE

RE

RE

VCE

VCC

RCI

C V

EQV

BE

Page 33: Operation Regions of Bipolar Transistors

BJT SPICE Model

• Besides capacitances associated with the physical structure, additional components are: diode current iS and substrate capacitance CJS related to the large area pn junction that isolates the collector from the substrate and one transistor from the next.

• RB is resistance between external base contact and intrinsic base region.

• Collector current must pass through RC on its way to active region of collector-base junction.

• RE models any extrinsic emitter resistance in device.

Page 34: Operation Regions of Bipolar Transistors

BJT SPICE Model Typical Values

Saturation Current IS = 3x10-17 A

Forward current gain BF = 100

Reverse current gain BR = 0.5

Forward Early voltage VAF = 75 V

Base resistance RB = 250 Collector Resistance RC = 50 Emitter Resistance RE = 1 Forward transit time TT = 0.15 ns

Reverse transit time TR = 15 ns

Chap 5 - 34


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