Public Information

Putting active and passive SiC power devices into action Performance and Robustness

T. NeyerCorporate R&D

Bodo Power Electronics ConferenceMunich, Dec. 2017

Power SiC

Public Information2 12/6/20172 12/6/2017

HV Power electronicsTrends and applications

Comparison IGBT/Diode vs SiC MosFET Performance and usage Robustness and limits

Manufacturing infrastructure substrates epitaxy special processes

Cost breakdown and outlook

Storyline

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High Voltage Power Electronics

Image: Panasonic

Power electronics is recently complemented and its range extended by WBG passive and active Devices

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High Voltage Power Electronics

TOP 3: covering ~80% of revenue

1) Transportation - EV/HEV and Rail

2) Motors3) Renewable Energies

- PV and Wind

We anticipate widespread SiCadoption in all three major areas within 3-5 years

SiC power devices are entering Si-IGBT regimes and addressing all applications predominately served by IGBTs

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• Transportation

High Voltage Power Electronics

Voltage range from 650V – 4.5kV SiC Diodes/Fets are aggressively evaluated - design-ins are reported for 2018-2021 ramps at leading manufacturers- usage of customized die sizes and packages and modules - dramatic reduction of power losses, form factors with sustained device robustness are driving the implementation

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• Motors

High Voltage Power Electronics

• Hybrid Si/SiC solutions are in volume production since 2006• Higher switching frequencies and lower power losses improve inverter efficiency• higher dv/dt transients require sinus or dv/dt filters to protect isolation and bearings• for high dynamic range drives inverter and filter sizes are significantly reduced

from: Yole Power SiC 2017 Report

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• Renewable Energy

High Voltage Power Electronics

• SiC passive and active devices are used in the boost and inverter stage of micro, string and central inverter classes• Efficiencies are in the high 98% range over wide load range, also low size and weight

• Wind turbine power ranges range from 1.7-- 6.5kV and 750A – 3.8kA• Main challenge as of today is the availability of high current SiC modules

Utility scale Solar power plant Wind turbine with full inverter

Today running 50Hz but new fast switching topologies

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Comparison IGBT vs SiC MosFET

SiCFET

FS4

Real estate for a 60kW HEV traction inverter switch used eg 6x in 3-phase 800V DC link -- system

in scale

• Si IGBTs are in development over 30 years• PT NPT thin-wafer FS and planar trench• FOM are approaching their theoretical limites• trade-offs between speed/conduction loss (die size) and speed and robustness• most suppliers are matured in 8” wafer production

• SiC MosFETs are early in its life cycle: 1–3 generation• Industry is converting their MFG footprint from 4” 6”

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Comparison IGBT vs SiC MosFET

ON-Semi FS4 -- 1200V 20A vs. 1200V 32A ON-Semi SiCFETIdentical drive conditions using 2.5Ω Rg and discrete driver circuitHigh switching speeds excite larger oscillations due to gate inductance loop.

Switching losses in exact load condition SiCFET <20% of IGBT

Drive optimized per device type (in 3L package): SiCFET can switch >80V/ns

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Comparison IGBT vs SiC MosFET

-80.0n -60.0n -40.0n -20.0n 0.0 20.0n 40.0n 60.0n 80.0n 100.0n-6

-4

-2

0

2

4

6

8

10

Tc=25deg.C

FSC Rectifier performance @ 600V, 8A Ultrafast Hyperfast Hyperfast2 Stealth Stealth2

IF [A

]

Time [sec]

8ns

18ns

SiCFET body diode vs Si FRD switches >2x faster is never snappy Vf ~ 30% higher (2.3V vs 3.4V) both negative temp coefficient (typ) SiC body diode can take >10kV/µs

body diode can be replaced withmonolithic Schottky diode (Vf<1.5V)

SiCFET

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P_sw

/P_c

on

f_s [kHz]

Comparison IGBT vs SiC MosFET

Switching frequency 1200V IGBT vsSiC Fets

• increase of switching frequencies enable significant shrink of expensive magnetics, passive components and filters• using customized drive schemes including Kelvin sense maximum switching frequencies of ~1MHz have been reported for 1200V SiCFETs• key parameters: device capacitance and ESR (distributed Gate resistance)

from Scherf et al ECPE WBG User forum 2017

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Short Circuit capability

Condition:Vce=Vds=600V, Vge=-5/18.5V, Rg=50Ω

Both device types need design measureslimiting the short circuit current I_maxto be short circuit rated trade-off

Influencing factor (SiC viewpoint):- higher current density- higher thermal conductivity- unipolar carrier type- low transconductance (∆Id/∆Vg)

IGBT vs SiC MosFET - Ruggedness

15µs

@150C

@150C

7µs

SiCFET

FS2 IGBT

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Dynamic Latch-up at extreme dv/dt’s

IGBT vs SiC MosFET - Ruggedness

Defectivity in advanced IGBT wafer processing can yield to percentage of reduced SOA/outlier

devices – need to screen with extreme conditions (>3-5 x IC/D and extreme dv/dt) Fails occur depending on current level 15-30V/ns for IGBTs and Even at max 80V/ns for SiCFETs no dynamic fails observed

FS4 IGBT

1200V IGBT after failed at dyn. Latch-up test

Low-side DUT latch-up test circuit for extreme dv/dts

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(dyn) Avalanche capability

T-IGBTs typically fail <5mJ/mm2SiC devices have extreme avalanche robustness onlylimited by thermal run-away

IGBT vs SiC MosFET - Ruggedness

0

0.5

1

1.5

0 2 4 6 8 10

1200V die, L=20µH

Eaval

aval

anch

e en

ergy

(J)

active chip area (mm2)

FS3 IGBT

SiCFET

SBD

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Cosmic radiation hardness

IGBT vs SiC MosFET - Ruggedness

from Bolotnikov et al APEC 2015

ON 1200V FS2 IGBT

1.63834000E7 1.63834200E7 1.63834400E7 1.63834600E7

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V leak

(V)

samples (arb. Units)

175 MeV80 % BV

SiCFET

- SiC devices are intrinsically more rugged in harsh radiation condition than Si FRD and IGBTs

- driven by much thinner device layers and higher current density

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SiC Substrate wafers

• Si wafer (FZ and MCZ) available in abundance up to 8/12”• SiC: wafer – few suppliers (5 trusted sources)

from Yole Power SiC 2017 Report

Total available 6”norm capacity (forcasted by Yole)2017: 38k2018: 55k2019: 76k2020: 114k

- High demand situation already in the next few quarters can potentially constrain SiC platform ramp-up

- Long lead times (ie RF-generators) are gating capacity increase

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• Special processes in SiC device manufacturing

– Epitaxy process is using MoCVD at ~1600C– Doping control, dislocation conversion ratedrives need advanced dedicated metrology equipment

– high energy implantations at high temperature drivesnew implanter system requirement

– high bandgap requires high dopandactivation temperatures (FT furnace)

6” Manufacturing Infrastructure

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• Special processes in SiC device manufacturing

– Hard SiC material needs high power grinding equipments– Creation of ohmic contacts needs often silicide

formation, where sometimes lasers are used

– Special equipments are also used for wafer level testing and die singulation

– Most other process steps in photolitography, thin film, diffusion, etching and cleaning modules can be shared between Silicon and SiC process

6” Manufacturing Infrastructure

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Cost distribution – 6” process

Key efforts in On-Semiconductors:

Cost: SiC MosFET ≤ IGBT + FWD

1) Understand cost drivers and potentials

2) Anticipate improvement rates for the respective technologies

3) Execute cost down roadmap

Substrate cost

Die singulation &packaging

EpitaxyThinning

Fab process

Yield others

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SiC Cost roadmap @ ON Semi

0,0000

0,2000

0,4000

0,6000

0,8000

1,0000

1,2000

1,4000

1,6000

1,8000

2017 2018 2019 2020 2021 2022 2023

IGBT_n

SiC_n

SIC FET Gen1

SiC FET Gen2

IGBT Next Gen

- multi sourcing for SiC substrates- substrate maturity and Yield improvements- work on specific Rdson- focus on improved processes for thinningand die singulation

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• SiC technology is enjoying a tremendous traction in the market for high power applications

• All key power electronics application which are inhabited by IGBTs today are well addressed by SiC actives and passives

• Key advantages: small form factor, more robust, low losses

• Process complexity is comparable to Silicon technology and much potential to improve the state-of-the-art

• Anticipating the acceleration in volume ramp-up and technology progress – there is a cost cross-over in sight

Take aways

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Q & ACorporate R&D

Bodo Power ConferenceMunich, Dec. 2017