Radiation tests in Padova

Giovanni Busetto, Alessandro Paccagnella

INFN and Università di Padova

G. Busetto, A. Paccagnella INFN and Università di Padova

Presentation

• Radiation facilities at the INFN National Laboratories of Legnaro (LNL-INFN):

– dedicated ion beam line at the TANDEM accelerator

– microbeam at the AN-2000 accelerator

– X-ray facility

G. Busetto, A. Paccagnella INFN and Università di Padova

Dedicated ion beam line

TANDEM accelerator,LNL- INFN

G. Busetto, A. Paccagnella INFN and Università di Padova

Scattering ChamberLNL-INFN

G. Busetto, A. Paccagnella INFN and Università di Padova

Beam Line Characteristics

• Device under radiation inside the vacuum chamber (<8 10-6 mbar)

• Electrical connections via feedthrough: D-type connector with 50 pins and 16 BNCs

• Under development: wireless connection• Ion fluence measurements:

– Si diodes (low ion currents) – Faraday cup (high ion currents)

G. Busetto, A. Paccagnella INFN and Università di Padova

Ions already usedIon Specie Energy

[MeV]LET

[MeV·cm2/mg]12C 88 1.5716O 109 2.8519F 117 3.7828Si 175 8.1658Ni 213 27.7

107Ag 257 52.2127I 288 61.8

G. Busetto, A. Paccagnella INFN and Università di Padova

Available Ions

List of ions available at the TANDEM accelerator:

H, Li, B, C, N, O, F, Mg, Al, Si, P, S, Cl, Ca, Ti, Cr, V, Fe, Ni, Cu, Zn, Ge, Se, Br, Zr, Mo, Ag, I, Au

Only Se and Mo have not been tested yet

G. Busetto, A. Paccagnella INFN and Università di Padova

Radiation tests performed• GLAST: test of ASIC (July 2001) / measurement of SEU

sensitivity of 5 shift register types

• Si Microstrip detectors and associated read-out electronics

• CMOS elementary components (MOS, MOSFETs)

• Field Programmable Gate Arrays (FPGAs)

• FLASH EPROM memories

• III-V solar cells and components (MESFETs, HEMTs)

• ...

G. Busetto, A. Paccagnella INFN and Università di Padova

Test Circuit (FPGA)

G. Busetto, A. Paccagnella INFN and Università di Padova

Test circuit (PCB)

EPF10K100

14 MHz

EPC1K8

26c31

26c32

80 m

Device under beam

G. Busetto, A. Paccagnella INFN and Università di Padova

Supply current

200

300

400

500

600

700

800

0 200 400 600 800 1000

Time (s)

Icc

(mA

)

Error type

0

0,5

1

1,5

2

2,5

3

3,5

0 200 400 600 800 1000

Time (s)

Err

or

cod

e

Trig: OkQ1: NoQ2: NoQ3: Ok

Trig: OkQ1: NoQ2: NoQ3: No

Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg

G. Busetto, A. Paccagnella INFN and Università di Padova

Supply current

200

250

300

350

400

450

500

550

600

650

0 200 400 600 800 1000 1200 1400

Time (s)

Icc

(mA

)

Error type

0

2

4

6

8

10

12

14

16

0 200 400 600 800 1000 1200 1400

Time (s)

Err

or

cod

e

Trig: NoQ1: OkQ2: OkQ3: Ok

Trig: OkQ1: NoQ2: NoQ3: No

Trig: OkQ1: OkQ2: NoQ3: No

Trig: OkQ1: NoQ2: NoQ3: No

Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg

G. Busetto, A. Paccagnella INFN and Università di Padova

Device cross Section (latch-up)

1,00E-08

1,00E-07

1,00E-06

1,00E-05

1,00E-04

1,00E-03

1,00E-02

1,00E-01

0 20 40 60 80

LET (MeV cm^2 / mg)

Dev

ice

Cro

ss S

ecti

on

[cm

2 ]

Weibull fit:F(L)=Fsat (1- exp{-[(L-L0)/W]s})Fsat=3.1·10-2 cm2

L0=0.1 MeV · cm2/mgW=32s=5

G. Busetto, A. Paccagnella INFN and Università di Padova

Other facilities

• Microbeam at the AN-2000 accelerator: – H and He ions, 2 MeV maximum – rastered area 2x2 mm2 (max)– beam current 10 pA– spot size < 2 m – first tests (May 2001) on FPGAs

• X-ray facility– under installation

G. Busetto, A. Paccagnella INFN and Università di Padova

X-ray Semiconductor Irradiation Facility

System characteristics:

• The system is composed of a X-ray machine (Seifert RP149) and an 8 inch wafer probe.

• Dose rate variable between 10 rad/s and 800 rad/s (for radiation tolerance studies) .

• Diameter of the X-ray beam up to 1 cm in standard use conditions.

• Maximum power supply voltage: 60 kV.

• Maximum tube current: 60 mA (at 50 kV maximum).

G. Busetto, A. Paccagnella INFN and Università di Padova

X-ray Semiconductor Irradiation Facility

• The system will be assembled at INFN National Laboratory of Legnaro (Padova) November 21th 2001.• The facility will be ready for operation before the end of 2001.