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Multiscale Systems Engineering Research Group
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Simulation-based Nanomaterials Design and Nanomanufacturing
Prof. Yan WangWoodruff School of Mechanical Engineering
Georgia Institute of TechnologyAtlanta, GA 30332, [email protected]
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Multiscale Systems Engineering Research Group
Computer-Aided Nano-DesignObjective: To investigate the feasibility of modeling and simulating nano structures
based on a proposed periodic surface model from atomic to meso scales and to expand the horizon of available shapes for design engineers.
P D G I-WP Grid
Lamellar Rod Spherical Micelle Mesh Membrane
( )1 1
( ) cos 2 ( )L M
Tlm l m
l m
ψ μ πκ= =
= ⋅∑∑r p r
(1b) intersection of P surface and 2 Grid surfaces
(1a) Sodalite cages. Vertices are Si (Al). Edges represent Si-O-Si (Si-O-Al) bonds.
(1c) P surface and its modulation with a Grid surface
Reverse engineering and visualization
Model construction
(2b) Reconstructed loci surface from a synthetic Zeolite crystal (Each tetrahedron encloses a Si, each vertex of the tetrahedral is a O, and each green sphere is a Na)
(2a) Reconstructed loci surface from a Faujasitecrystal (Each tetradecahedron encloses a Fe, each hexagonal prism encloses an Al, and each vertex of the polygons represents a Si)
Cubic
Simple Body-Centered Face-Centered
Orthorhombic Simple
a b c≠ ≠
Base-Centered
a b c≠ ≠
Body-Centered
a b c≠ ≠
Face-Centered
a b c≠ ≠
Tetragonal Monoclinic Simple
a c≠
Body-Centered
a c≠
Simple
90 90,α β γ≠ ° = = °
Base-Centered
90 90,α β γ≠ ° = = °
Triclinic Rhombohedral Hexagonal
90, ,α β γ ≠ °
90, ,α β γ ≠ °
a c≠
ab
c
ab
c
ab
c
ab
c
α
β
γ
α
β
γ
aa
c
aa
c
c aα
β
γ
a a
aα
β
γ
Mathematical models of Bravais Lattice
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Multiscale Systems Engineering Research Group
Computer-Aided Nano-Design Periodic Surface (PS) Model
cos(x)+cos(y)+cos(z)=0
cos(z)=0
cos(x)cos(y)cos(z)=0
2cos(x)cos(y)+2cos(y)cos(z)+2cos(x)cos(z) −cos(2x) − cos(2y) −cos(2z) =0
9+4cos(x)+4cos(y)+ 4cos(z )=0
( ) 0)(2cos)(1 1
=⋅= ∑∑= =
L
l
M
m
Tmllmrpr πκμψ
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Multiscale Systems Engineering Research Group
Computer-Aided Nano-Design Complex and porous structures by PS models
Feature-based crystal construction
Mask operation
Union operation
Insertion operation
Fractal structures
Tmask[
, ,
10]=
Tun[
,
] =
Tins[
,
] =
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Multiscale Systems Engineering Research Group
Phase-Change Materials Design
A phase transition is a geometric and topological transformation process of materials from one phase to another, each of which has a unique and homogeneous physical property.Important to design various phase-change materials (e.g. for information storage and energy storage)
The most critical step is to estimate the saddle points along the minimal energy path on high-dimensional potential energy surfaces
current statestate j
ΔEj
state itransition path
saddle point
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Multiscale Systems Engineering Research Group
Geometry Guided Saddle Point Search
Provide initial guess of transition path: FeTi+H
Guess 1: by linear surface interpolation
Guess 2: by potential-driven surface interpolation
(a) FeTi (b) FeTiH
Fe
Ti
H
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Multiscale Systems Engineering Research Group
−4715.7775
−4709.3970
Energy (eV)
(initial state)
−4715.4974
−4722.7941
−4708.5716
−4715.4812
−4717.9910(final state)
−4716.4783−4715.9963
−4717.9640 −4717.9351
Saddle-point energy level
−4715.2376
−4713.9203
−4717.1825
Coordinate linear interpolationSurface linear interpolationPotential-driven surface interpolation
Search Results by the Nudged Elastic Band Method
Activation Energy:Experimental result = 0.2912 eV per atomThe default coordinate linear interpolation failed to find saddle pointSurface linear interpolation = 0.26285 eV per atomPotential-driven surface interpolation =1.1543 eV per atom
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Multiscale Systems Engineering Research Group
Concurrent Saddle Point SearchSearch both local minimums and saddle point at the same timeSearch multiple transition paths with only one initial pathway guess to provide a global view of energy landscape
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Multiscale Systems Engineering Research Group
Computer-Aided Nano-Manufacturing Controlled Kinetic Monte Carlo (cKMC)
cKMC is developed as a generalization of KMC to simulate both top-down and bottom-up processes in nanomanufacturing
KMC cannot simulate top-down processescKMC defines two types of events
Self-assembly events – occur spontaneously (as in classical KMC)Controlled events – occur at certain locations or at particular times deterministically to model particle re-arrangement as the direct result of external energy (force, light, field, etc.)
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Multiscale Systems Engineering Research Group
cKMC: Scanning Probe Lithography
Number of sites involved
Reaction/transition event
1 R1: controlled_species → activated_controlled_species (controlled)
2 R2: activated_controlled_species + vacancy → vacancy + activated_controlled_species (controlled)R3: vaporized_workpiece_species + vacancy → vacancy + vaporized_workpiece_speciesR4: workpiece_species + vacancy → vacancy + workpiece_speciesR5: vaporized_workpiece_species + absorbent → vacancy + absorbentR6: activated_controlled_species + absorbent → vacancy + absorbent
3 R7: workpiece_species + workpiece_species + vacancy → vacancy + workpiece_species + workpiece_speciesR8: vaporized_workpiece_species + workpiece_species + workpiece_species → workpiece_species + workpiece_species + workpiece_species
4 R9: activated_ controlled_species + workpiece_species + vacancy + vacancy → vacancy + workpiece_species + vacancy + vaporized_workpiece_speciesR10: activated_ controlled_species + workpiece_species + workpiece_species + workpiece_species → workpiece_species + workpiece_species + workpiece_species + workpiece_species
workpiece species
controlled species
controlled diffusion events
vaporized workpiecespecies
absorbent species
activated controlled
species
vacancy
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Multiscale Systems Engineering Research Group
cKMC: nanomanufacturing processes
workpiecespecies
Ga_src
Ga+
absorbent
substrate
absorbent
target
deposited metal
absorbent
resist
mold2path2mold1
path1_activepath1
mobilized_resist
Physical vapor deposition (PVD)
Ionized PVDNano-imprint lithography
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Multiscale Systems Engineering Research Group
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Uncertainty in Modeling & SimulationAleatory Uncertainty:
inherent random dispersionin the system. Also known as:
• variability
• random error
• irreducible uncertainty
Epistemic Uncertainty:due to lack of perfect knowledge about the system. Also known as:
• incertitude
• systematic error
• reducible uncertainty
• model-form uncertainty
Lack ofdata Epistemic
Uncertainty in Models & Inputs
Conflictingbeliefs
Conflictinginformation
Lack ofintrospection
Measurementsystematic
errors
Lack ofinformation
aboutdependency
Truncationerrors
Round-offerrors
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Multiscale Systems Engineering Research Group
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Generalized Hidden Markov Model for Cross-Scale Model Validation
Similar to the Bayesian approach in model validation [Babuška et al. 2008, Oden et al. 2010]
Observable
,1ix iX
jy jY
,1jy
,2jy
Hidden
kz ,1kz kZ
,4ix,3ix
,2ix
ix
yΩ
xΩ
zΩ
Scale Z
Scale Y
Scale X
( )
( )( )( )( )( )
( )( )( )( )
1 1
1 11 1 1
1 1
1 1
1 1 1
1 1
1 1
1 1
1 1
1
, , | , ,
, , | , ,, ,
, , | , ,
, , | , ,, , | , , , , ,
, , | , ,
, , | , ,
dual , , | , ,
, , | , ,
N N
M ML N M
N M
M L
L M N
N N
M M
N M
M L
Z Z z z
Y Y y yx x dz dz dy dy
z z y y
y y x xx x Y Y Z Z
Z Z z z
Y Y y y
z z y y
y y x x
x
⎡ ⎤⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎣ ⎦=
∫ ∫
p
pp
p
pp
p
p
p
p
p
… …… …
…… …… …
… … …… …… …… …… …
( )
1 1 1
, ,
N M L
L
dz dz dy dy dx dx
x
⎡ ⎤⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎢ ⎥⎣ ⎦
∫ ∫
…
( )pda m adN
αγ=
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Multiscale Systems Engineering Research Group
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Reliable Atomistic Simulation –Model Form Uncertainty in Molecular Dynamics
Imprecise probabilistic distributions for uncertainty: damage function (v) from irradiation - the probability that a stable Frenkel pair is generated at certain level of transfer or recoil energy (T)
MD simulation observation (with uncertainty)bounds based on std. dev. of binomial distributions
16 simulation runs for each energy-radiation angle combination
0 50 1000
0.5
1angle=57.0
Recoil energy (T)
Dam
age
func
tion
(v)
midlowerupper
0 50 1000
0.5
1angle=0.0
Recoil energy (T)
Dam
age
func
tion
(v)
midlowerupper
0 50 1000
0.5
1angle=90.0
Recoil energy (T)
Dam
age
func
tion
(v)
midlowerupper
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Multiscale Systems Engineering Research Group
Reliable Atomistic Simulation Reliable kinetic Monte Carlo
Simulate kMC with imprecise ratesAn efficient alternative to sensitivity analysis
Event type Species and reactions Rate constant
R1: water dissociation H2O ↔ OH− + H+ 101
R2: carbonic acid dissociation CO2 + H2O ↔ HCO3− + H+ 101
R3: acetic acid dissociation AcH ↔ Ac− + H+ 101
R4: reduced thionine first dissociation
MH3+ ↔ MH2 + H+ 101
R5: reduced thionine second dissociation
MH42+ ↔ MH3
+ + H+ 101
R6: acetate with oxidized mediator
Ac− + MH+ + NH4+ + H2O →
XAc + MH3+ + HCO3
− + H+101
R7: oxidation double protonated mediator
MH42+ → MH+ + 3H+ + 2e− 101
R8: oxidation single protonatedmediator
MH3+ → MH+ + 2H+ + 2e− 101
R9: oxidation neutral mediator MH2 → MH+ + H+ + 2e− 101
R10: proton diffusion through PEM
H+ → H_+ 10−2
R11: electron transport from anode to cathode
e− → e_− 10−2
R12: reduction of oxygen with current generated
2H_+ + 1/2O2_ + 2e_− →H2O_
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R13: reduction of oxygen with current generated
O2_ + 4e_− + 2H2O_ →4OH_−
103
anode chamber
cathode chamber
(a) H2O in anode chamber
(b) H+ in cathode chamber
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Multiscale Systems Engineering Research Group
NSF Grant No.1001040NSF Grant No.1306996
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Thanks!