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SUBJECT INDEX FOR VOLUME 11

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Ž . Diamond and Related Materials 11 2002 19691997 Subject Index for Volume 11 3-Point bend The fracture stress of chemical vapour deposited diamond, 1913 3H centre Photoluminescence studies of type IIa and nitrogen doped CVD diamond, 692 60 kW CVD ² : Large area deposition of 100 -textured diamond films by a 60-kW microwave plasma CVD reactor, 596 6HSiC Ž . Ž . Diamond deposition on Si 111 and carbon face 6HSiC 0001 substrates by positively biased pretreatment, 509 a-C Ab initio generation of amorphous carbon structures, 1015 Soft X-ray photoelectron microscopy used for the characterization of diamond, a-C and CN , thin films, 1068 x a-C:H films Effects of substrate bias on nanotribologyof a-C:H films deposited by ECR-MPCVD, 1653 a-C:N nano-rods Morphology and characterization of highly nitrogenated, aligned, amorphous carbon nano-rods formed on an alumina template by ECR-CVD, 1193 A-defect Detonation synthesis ultradispersed diamond structural properties investigation by infrared absorption, 872 Abrading Abrasive stripping voltammetry of silver and tin at boron-doped diamond electrodes, 646 Absorption Spectroscopic study of HPHT synthetic diamonds, as grown at 1500C, 22 Optical characterization of natural Argyle diamonds, 125 The absorption investigation in CVD-diamond plates and windows at 50200 GHz, 1485 Acetylene Plasma chemistry during deposition of a-C:H, 989 Adhesion Effect of WC grain growth inhibitors on the adhesion of chemical vapor deposition diamond films on WCCo cemented carbide, 242 High temperature diffusion chromizing as a successful method for CVD-diamond coating of steel, 757 Investigating the fracture resistance and adhesion of DLC films with micro-impact testing, 1606 Microwave plasma chemical vapour deposition diamond nucleation on ferrous substrates with Ti and Cr interlayers, 1617 Effect of film thickness on the stress and adhesion of diamond-like carbon coatings, 1643 DLC-based wear protection on magnetic storage media, 1781 Adhesion strength Quantitative comparison of adhesive toughness for various diamond films on co-cemented tungsten carbide, 716 Adsorbates Role of adsorbates in field emission from nanotubes, 769 Adsorption Electron emission from hydrogenated and oxidized heteroepitaxial diamond doped with boron, 780 AlN Reactive DC magnetron sputtering of aluminum nitride films for surface acoustic wave devices, 413 Amorphous Preparation and properties of amorphous carbon oxy-nitride films made by the layer-by-layer method, 1210 Response time of photoconductivity of amorphous carbon nitride films prepared by a nitrogen radical sputter method, 1215 High resistivity and low dielectric constant amorphous carbon nitride films: application to low-k materials for ULSI, 1219 Amorphous carbon Characteristics of hydrogenated amorphous carbon films deposited by large-area microwave-sustained surface wave plasma, 976 Properties of Wa-C nanometric multilayers produced by RF-pulsed magnetron sputtering, 1000 Effects of gas pressure and r.f. power on the growth and properties of magnetron sputter deposited amorphous carbon thin films, 1005 Optical strength in UV region of amorphous carbon, 1106 Mechanical properties and performance of magnetron-sputtered graded diamond-like carbon films with and without metal additions, 1139 Ž . Micro-structural analysis of carbon nitride CN film prepared x by ion beam assisted magnetron sputtering, 1205 Field emission site density studies of amorphous carbon films, 1422 Microstructure of diamond-like carbon films prepared by cathodic arc deposition, 1436 Nanoporosity in plasma deposited amorphous carbon films investigated by small-angle X-ray scattering, 1946 Amorphous carbon coatings Tribological behaviour and chemical characterisation of Si-free and Si-containing carbon nitride coatings, 169 Amorphous diamond Ab initio generation of amorphous carbon structures, 1015 Elsevier Science B.V. All rights reserved. Ž . PII: S 0 9 2 5 - 9 6 3 5 02 00250-9
Transcript
Page 1: SUBJECT INDEX FOR VOLUME 11

Ž .Diamond and Related Materials 11 2002 1969�1997

Subject Index for Volume 11

3-Point bendThe fracture stress of chemical vapour deposited diamond, 1913

3H centrePhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

60 kW CVD² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596

6H�SiCŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509

a-CAb initio generation of amorphous carbon structures, 1015Soft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068x

a-C:H filmsEffects of substrate bias on nanotribologyof a-C:H films deposited

by ECR-MPCVD, 1653

a-C:N nano-rodsMorphology and characterization of highly nitrogenated, aligned,

amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193

A-defectDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872

AbradingAbrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646

AbsorptionSpectroscopic study of HPHT synthetic diamonds, as grown at

1500�C, 22Optical characterization of natural Argyle diamonds, 125The absorption investigation in CVD-diamond plates and windows

at 50�200 GHz, 1485

AcetylenePlasma chemistry during deposition of a-C:H, 989

AdhesionEffect of WC grain growth inhibitors on the adhesion of chemical

vapor deposition diamond films on WC�Co cemented carbide,242

High temperature diffusion chromizing as a successful method forCVD-diamond coating of steel, 757

Investigating the fracture resistance and adhesion of DLC filmswith micro-impact testing, 1606

Microwave plasma chemical vapour deposition diamond nucleationon ferrous substrates with Ti and Cr interlayers, 1617

Effect of film thickness on the stress and adhesion ofdiamond-like carbon coatings, 1643

DLC-based wear protection on magnetic storage media, 1781

Adhesion strengthQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716

AdsorbatesRole of adsorbates in field emission from nanotubes, 769

AdsorptionElectron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780

AlNReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413

AmorphousPreparation and properties of amorphous carbon oxy-nitride films

made by the layer-by-layer method, 1210Response time of photoconductivity of amorphous carbon nitride

films prepared by a nitrogen radical sputter method, 1215High resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219

Amorphous carbonCharacteristics of hydrogenated amorphous carbon films deposited

by large-area microwave-sustained surface wave plasma, 976Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphous carbonthin films, 1005

Optical strength in UV region of amorphous carbon, 1106Mechanical properties and performance of magnetron-sputtered

graded diamond-like carbon films with and without metaladditions, 1139

Ž .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205Field emission site density studies of amorphous carbon films,

1422Microstructure of diamond-like carbon films prepared by cathodic

arc deposition, 1436Nanoporosity in plasma deposited amorphous carbon films

investigated by small-angle X-ray scattering, 1946

Amorphous carbon coatingsTribological behaviour and chemical characterisation of Si-free

and Si-containing carbon nitride coatings, 169

Amorphous diamondAb initio generation of amorphous carbon structures, 1015

Elsevier Science B.V. All rights reserved.Ž .PII: S 0 9 2 5 - 9 6 3 5 0 2 0 0 2 5 0 - 9

Page 2: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 111970

Amorphous filmStudy of the structure of hard graphite-like amorphous carbon

films by electron diffraction, 1467

Amorphous hydrogenated carbonUltraviolet photoluminescence and its relation to atomic bonding

properties of hydrogenated amorphous carbon, 53Growth mechanism of amorphous hydrogenated carbon, 969Low energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Multi-band structure of amorphous carbon luminescence, 1115Space-charge-limited current in hydrogenated amorphous carbon

films containing silicon and oxygen, 1753Fluorinated a-C:H films investigated by thermal-induced gas

effusion, 1831Nanoporosity in plasma deposited amorphous carbon films

investigated by small-angle X-ray scattering, 1946

Amorphous materialsOptical characterization of diamond-like carbon films using

multi-sample modification of variable angle spectroscopicellipsometry, 105

Amorphous semiconductorsAb initio generation of amorphous carbon structures, 1015

Amorphous-carbonSubstrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227

Amorphous-hydrogenated carbonSpin density in hydrogenated amorphous carbon films�different

originations, 1848

Anisotropic etchingSmooth and high-rate reactive ion etching of diamond, 824

AnnealingNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623Influence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263Synthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,

1344

ApplicationOptical, anti-reflective and protective properties of diamond and

diamond-like carbon films, 1329

ApplicationsElectrical properties of graphite�homoepitaxial diamond contact,

451Abrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646Diamond cantilever with integrated tip for nanomachining, 667Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

GaN-based heterostructures for sensor applications, 886

Arc dischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc

discharge technique, 914

Atmospheric pressureNew technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472

Atomic force microscopyDiamond cantilever with integrated tip for nanomachining, 667Nanolithographic modification of diamond, 1788

Ž .Atomic force microscopy AFMA new method for evaluating the scratch resistance of diamond-like

carbon films by the nano-scratch technique, 1454

Atomic oxygenA spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

Ž .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,RBS and TOF-SIMS, 1385

Atomic structureAb initio generation of amorphous carbon structures, 1015

B�C�NSynthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290

B-dopingDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316

Backscattering spectrometryInvestigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239

Band structureDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872Multi-band structure of amorphous carbon luminescence, 1115

BCNInteractions of Ta-filaments during hot-filament CVD of

BCN-layers, 191

Beveling angleThermochemical beveling of CVD diamond films intended for

precision cutting and measurement applications, 1537

BiasŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma

chemical vapor deposition, 523Substrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227Influences of substrate bias on the composition and structure of

carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584

Bias assisted growthBias assisted growth on diamond single crystals: the defect

formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487

Bias enhanced nucleationAnalysis of the total carbon deposition during the bias enhanced

Ž . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3493

Bias methodA new method of formation of impurity-doped diamond films by

bias method, 1804

Page 3: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 11 1971

Bidimensional electron gasGaN-based heterostructures for sensor applications, 886

Black diamondBlack diamond: a new material for active electronic devices, 396

BondingOptical brazing technique for bonding diamond films to zinc

sulfide, 753Determination of bonding in diamond-like carbon by Raman

spectroscopy, 1053

Bonding structureOn the bonding structure of hydrogenated carbon nitrides grown

by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161

Deposition of amorphous CN by d.c. and rf plasma sputteringxusing a rf radical nitrogen beam source, 1178

BoronInvestigation on boron-doped CVD samples, 338

Boron carbon nitrideCharacterization of boron carbon nitride films with a low

dielectric constant, 985Electron cyclotron resonance plasma-assisted pulsed laser

deposition of boron carbon nitride films, 1623

Boron dopedA new method of formation of impurity-doped diamond films by

bias method, 1804

Boron dopingDetection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662Characterisation of electron irradiated boron-doped diamond, 681Etching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828Kinetics study of diamond electrodes at different levels of boron

doping as quasi-reversible systems, 1523

Boron nitrideHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Spectroscopic ellipsometry studies on BN films from IR to vacuum

UV energy region, 1281Precursor design in c-BN growth, 1300Novel BN tassel-like and tree-like nanostructures, 1397Direct growth of c-BN on a mono-structured transition layer by

plasma-enhanced chemical vapor deposition, 1854

Boron-dopedMagnetoresistance of boron-doped chemical vapor deposition

polycrystalline diamond films, 49

Boron-doped diamondSynchrotron radiation X-ray analysis of boron-doped diamond

films grown by hot-filament assisted chemical vapor deposition,153

Bowing parameterOptical investigation of Al Ga N epitaxial films grown onx 1�x

AlN buffer layers, 892

Brillouin scatteringElastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062

Buffer layerŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901

Bulk diamondFormation of diamond from CaCO in a reduced C�O�H fluid at3

HP�HT, 1496

C�VElectrical properties of MgO�p-diamond junction fabricated on

homoepitaxial single-crystalline diamond, 1952

c-BNDirect growth of c-BN on a mono-structured transition layer by

plasma-enhanced chemical vapor deposition, 1854

c-BN filmsIon beam assisted growth of c-BN films on top of c-BN substrates

� a HRTEM study, 38

c-BN substrateIon beam assisted growth of c-BN films on top of c-BN substrates

� a HRTEM study, 38

C N3 4XPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x1149

Effect of plasma parameters on the structure of CN layersxdeposited by DC magnetron sputtering, 1200

Pulsed laser deposition of CN films: role of r.f. nitrogenxplasma activation for the film structure formation, 1223

C fullerene60Carbon films obtained from a C fullerene ion beam, 96460

CapacitanceEIS capacitance diagnosis of nanoporosity effect on the corrosion

protection of DLC films, 160

CarbideTransmission electron microscopy studies of nanofibers formed on

Fe C -carbide, 9317 3From �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268Heteroepitaxial growth of erbium carbide on boron doped

Ž .homoepitaxial diamond 100 films, 1332

CarbidesX-Ray absorption study of the bonding structure of BCN

compounds enriched in carbon by CH ion assistance, 12954

CarbonVery adherent CVD diamond film on modified molybdenum sur-

face, 532Electrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657Field emission from carbon films deposited on stainless steel

substrate, 784Defect induced lowering of work function in graphite-like

materials, 813Low temperature plasma chemical vapour deposition of carbon

nanotubes, 918Growth mechanism and properties of the large area well-aligned

carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922

Atomic and electronic structures of Si-included C cluster74studied by HREM and molecular orbital calculations, 935

Characteristics of nickel-containing carbon films deposited usingelectron cyclotron resonance CVD, 1031

Preparation and properties of amorphous carbon oxy-nitride filmsmade by the layer-by-layer method, 1210

Response time of photoconductivity of amorphous carbon nitridefilms prepared by a nitrogen radical sputter method, 1215

Page 4: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 111972

High resistivity and low dielectric constant amorphous carbonnitride films: application to low-k materials for ULSI, 1219

Effects of sp2�sp3 bonding ratios on field emission propertiesof diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429

Carbon nanofiberPulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953

Carbon nanotubeIn situ diagnosis of chemical species for the growth of carbon

nanotubes in microwave plasma-enhanced chemical vapor de-position, 59

Carbon nanotube growthFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

Carbon nanotubesA novel CW laser�powder method of carbon single-wall nanotubes

production, 927Growth mechanism of Y-junction carbon nanotubes, 1349Fabrication of vertically aligned carbon nanotubes patterns by

chemical vapor deposition for field emitters, 1638Field emission display with carbon nanotubes cathode: prepared by

a screen-printing process, 1845

Carbon nitrideStructure of nitrogenated amorphous carbon films from NEXAFS,

8Mechanical and tribological properties of CN films deposited byx

reactive pulsed laser ablation, 98Tribological behaviour and chemical characterisation of Si-free

and Si-containing carbon nitride coatings, 169Paramagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143Ž .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172Deposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178Hydrogen concentrations and mass density obtained by X-ray and

neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

Effects of thermal annealing on amorphous carbon nitride films byr.f. PECVD, 1633

Synthesis of nanocrystalline nitrogen-rich carbon nitride powdersat high pressure, 1885

Carbon nitride filmCarbon nitride films with low friction coefficient synthesized by

nitrogen-ion-beam-assisted pulsed laser deposition, 1629

Carbon nitride filmsDependence of the composition and bonding structure of carbon

nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511

Carbon nitridesThe effect of ammonia�dimethylamine ratio in deposition of

hydrogenated CN films by PE-HF-CVD, 1905x

Carbon overlayersElectrochemical tests on the carbon protective layer of a hard

disk, 1409

Carbon phosphideDeposition and properties of amorphous carbon phosphide films,

1041

Ž .Carbon vapor deposition CVDAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513

Carbon-nitrideModulated CN films prepared by IBAD, 1552x

Carrier mobilityMagnetoresistance of boron-doped chemical vapor deposition

polycrystalline diamond films, 49

CatalystsThe enhancement of interconnected sp3 sites by chemical effects

during ta-C film growth, 1721

Catalytic graphitizationA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Catalytic processesGrowth mechanism and properties of the large area well-aligned

carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922

The effect of catalysis on the formation of one-dimensional carbonstructured materials, 1019

Formation of diamond from CaCO in a reduced C�O�H fluid at3HP�HT, 1496

CathodoluminescenceHPHT synthesis of diamond with high nitrogen content from an

Fe N�C system, 18633

Cemented carbideOn effectiveness of various surface treatments on adhesion of

HF-CVD diamond coating to tungsten carbide inserts, 1660

Characterisation IR� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328

CharacterizationGrain boundaries in boron-doped CVD diamond films, 697Deposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896Atomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905

Chemical bondingMicrostructure of diamond-like carbon films prepared by cathodic

arc deposition, 1436

Chemical vapor depositionIn situ diagnosis of chemical species for the growth of carbon

nanotubes in microwave plasma-enhanced chemical vapor de-position, 59

Ž .Fabrication of heteroepitaxial diamond thin films on Ir 001 �Ž .MgO 001 substrates using antenna-edge-type microwave

plasma-assisted chemical vapor deposition, 478The cavity ring-down spectroscopy of C in a microwave plasma,2

608Surface acoustic waves on nanocrystalline diamond, 677Thermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703Quantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the

cutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Field emission, structure, cathodoluminescence and formationstudies of carbon and Si�C�N nanotubes, 793

Characteristics of hydrogenated amorphous carbon films deposited

Page 5: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 11 1973

by large-area microwave-sustained surface wave plasma, 976Growth mechanism of Y-junction carbon nanotubes, 1349Diamond-like carbon films deposited by electron beam excited

plasma chemical vapor deposition, 1353Calculated energies of adsorption of non-hydrocarbon species on

Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initiocalculation, 1560

Fabrication of vertically aligned carbon nanotubes patterns bychemical vapor deposition for field emitters, 1638

Direct growth of c-BN on a mono-structured transition layer byplasma-enhanced chemical vapor deposition, 1854

Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897

The effect of ammonia�dimethylamine ratio in deposition ofhydrogenated CN films by PE-HF-CVD, 1905x

Ž .Chemical vapor deposition CVDEnhanced low-temperature thermionic field emission from

surface-treated N-doped diamond films, 774Growth mechanism and properties of the large area well-aligned

carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922

Effects of sp2�sp3 bonding ratios on field emission propertiesof diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429

Chemical vapour deposited diamondImaging of charge collection properties of a CVD diamond detector

using X-ray-induced current microscopy, 1472

Chemical vapour depositionLow temperature plasma chemical vapour deposition of carbon

nanotubes, 918The effect of nitriding on the diamond film characteristics on

chromium substrates, 1760The fracture stress of chemical vapour deposited diamond, 1913

Ž .Chemical vapour deposition CVDGrain boundaries in boron-doped CVD diamond films, 697

Chemical vapour deposition diamondMicrowave plasma chemical vapour deposition diamond nucleation

on ferrous substrates with Ti and Cr interlayers, 1617

Ž .Chemically vapor-deposited CVD diamondDiamond windows and domes: flexural strength and thermal shock,

218

ChemisorptionCubic boron nitride growth from NH and BBr precursors: a3 3

theoretical study, 1286Reactivity of the hydrogen atoms on diamond surface with various

radical initiators in mild condition, 1360Abstraction of hydrogen atoms on diamond surface using benzoyl

peroxide as a radical initiator, 1374

Chromium nitrideCVD diamond deposition on steel using arc-plated chromium

nitride interlayers, 536

CNx

Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x

CoatingSoft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068x

Effects of hydrogen incorporation on structural relaxation andvibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Coating hardnessCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

CoatingsCarbon based coatings for high temperature cutting tool

applications, 176

Coiled nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

Columnar structureSmooth and high-rate reactive ion etching of diamond, 824

Combustion growthA process for continuous manufacturing of diamond in atmosphere,

1479

CompositeComposite diamond films with smooth surface and the structural

influence on dielectric properties, 228DLC composite thin films by sputter deposition, 1119

Computer simulationAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513Diagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562Analysis of the growth process of diamond films by chemical vapor

deposition, 584Atomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935High-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Calculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961Cubic boron nitride growth from NH and BBr precursors: a3 3

theoretical study, 1286

ConductivityLow temperature properties of the p-type surface conductivity of

diamond, 351

CorrosionThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Coulomb oscillationFabrication of diamond single-hole transistors using AFM

anodization process, 387

CrackingMechanical analysis for crack-free release of chemical-

vapor-deposited diamond wafers, 1597

Critical number of friction cyclesCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

Crystallization of diamondThermal decomposition of glucose and diamond formation under

diamond-stable high pressure�high temperature conditions, 118

Crystals� 4Simulation of step patterns on natural diamond 111 surfaces, 145

Page 6: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 111974

Cubic BNHigh-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280

Cubic boron nitrideSynthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272Cubic boron nitride growth from NH and BBr precursors: a3 3

theoretical study, 1286Reactivity of different tBN environments serving as reaction sites

in cBN film deposition, 1416Relation between stress in cubic boron nitride films and the

in-plane TO phonon energy, 1532

Ž .Cubic boron nitride CBNStresses in pulsed laser deposited cubic boron nitride films, 1276Near-threshold creation of optical centres in electron irradiated

cubic boron nitride, 1774

Current decreaseDC and RF characteristics of 0.7-�m-gate-length diamond

metal�insulator�semiconductor field effect transistor, 378

Cut-off frequencyDC and RF characteristics of 0.7-�m-gate-length diamond

metal�insulator�semiconductor field effect transistor, 378

Cutting edgeThermochemical beveling of CVD diamond films intended for

precision cutting and measurement applications, 1537

Cutting toolHigh-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280

CVDDiamond membrane based structures for miniature X-ray sources,

1Formation of diamond p�n junction and its optical emission

characteristics, 307Effects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446The CAP-reactor, a novel microwave CVD system for diamond

deposition, 467New technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001

substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma

chemical vapor deposition, 523Very adherent CVD diamond film on modified molybdenum sur-

face, 532Analysis of the growth process of diamond films by chemical vapor

deposition, 584Preparation and properties of sub-micron thick and free-standing

diamond membranes, 721Field emission from carbon films deposited on stainless steel

substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788Etching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828Characteristics of nickel-containing carbon films deposited using

electron cyclotron resonance CVD, 1031In situ kinetic analysis of SiC filaments CVD, 1234Synthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290Novel BN tassel-like and tree-like nanostructures, 1397Study on the growth of CVD diamond thin films by in situ

reflectivity measurement, 1871

CVD diamondImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418Influence of nucleation on hydrogen incorporation in CVD

diamond films, 527Kinetics study of diamond electrodes at different levels of boron

doping as quasi-reversible systems, 1523

CVD diamond filmsHeteroepitaxial growth of erbium carbide on boron doped

Ž .homoepitaxial diamond 100 films, 1332Thermochemical beveling of CVD diamond films intended for

precision cutting and measurement applications, 1537

CVD diamond growthIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

CVD-diamondThe absorption investigation in CVD-diamond plates and windows

at 50�200 GHz, 1485

Ž .Cyclotron resonance chemical vapor deposition CVDRu-doped nanostructured carbon films, 1890

d.c. plasma CVDDefect induced lowering of work function in graphite-like

materials, 813

DC arc dischargeField emission display with carbon nanotubes cathode: prepared by

a screen-printing process, 1845

DC bias measurementsApplication of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332

DC plasma CVDMicrostructure and stress in nano-crystalline diamond films

deposited by DC glow discharge CVD, 601

Decomposition of glucoseThermal decomposition of glucose and diamond formation under

diamond-stable high pressure�high temperature conditions, 118

Deep-level transient spectroscopyThe origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

DefectTheoretical modeling of sulfur�hydrogen complexes in diamond,

323

DefectsDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316Relaxation in undoped polycrystalline CVD diamond films under

red illumination, 635Grain boundaries in boron-doped CVD diamond films, 697From straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081Highest optical gap tetrahedral amorphous carbon, 1086Investigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239

DensityEngineering properties of fully sp3- to sp2-bonded carbon

films and their modifications after post-growth ionirradiation, 1095

Page 7: SUBJECT INDEX FOR VOLUME 11

Subject Index for Volume 11 1975

Density functional theoryA spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

Density of statesStructure of nitrogenated amorphous carbon films from NEXAFS,

8A spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

Depletion regionFabrication of diamond single-hole transistors using AFM

anodization process, 387

DepositionThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467Nanoporosity in plasma deposited amorphous carbon films

investigated by small-angle X-ray scattering, 1946

Deposition conditionsPulsed PECVD deposition of diamond-like carbon films, 1047

Deposition temperatureDependence of the composition and bonding structure of carbon

nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511

DetectorsImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418Photoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427

DeuteriumŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,

RBS and TOF-SIMS, 1385

Device modelingOptimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254

DiamondDiamond membrane based structures for miniature X-ray sources,

1Nanocrystalline diamond directly transformed from carbon

nanotubes under high pressure, 87� 4Simulation of step patterns on natural diamond 111 surfaces, 145

Field emission property of chemical vapor deposited diamondoverlayer films, 185

The effect of the growth rate on the concentration of nitrogen andtransition metal impurities in HPHT synthetic diamonds, 204

Size and temperature dependence of nanodiamond�nanographitetransition related with surface stress, 234

Fabrication of diamond flow controller micronozzles, 237n-Type doping of diamond by sulfur and phosphorus, 289The kinetics of the capture of nitrogen by nickel defects in

diamond, 312� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328Application of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332A new acceptor state in CVD-diamond, 347DC and RF characteristics of 0.7-�m-gate-length diamond

metal�insulator�semiconductor field effect transistor, 378

Preparation of AlN and LiNbO thin films on diamond substrates3by sputtering method, 408

Photoconductivity of highly oriented and randomly orienteddiamond films for the detection of fast UV laser pulses, 423

Recent progresses of the BOLD investigation towards UV detectorsfor the ESA Solar Orbiter, 427

Effects of light on the ‘primed’ state of CVD diamond nucleardetectors, 446

New technology for high rate synthesis of PC-diamond coatings inair with photon plasmatron, 472

Ž .Fabrication of heteroepitaxial diamond thin films on Ir 001 �Ž .MgO 001 substrates using antenna-edge-type microwave

plasma-assisted chemical vapor deposition, 478Diamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555Recombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623On the ion-sensitivity of H-terminated surface channel devices on

diamond, 651Classical approximations for ionised impurity scattering applied

to diamond monocrystals, 686Preparation and properties of sub-micron thick and free-standing

diamond membranes, 721Application of diamond coatings onto small dental tools, 731Tribological properties of Al�Si�Cu�Mg alloy-based composite-

dispersing diamond nanocluster, 749Enhanced low-temperature thermionic field emission from

surface-treated N-doped diamond films, 774Field emission from carbon films deposited on stainless steel

substrate, 784High pressure diamond and diamond-like carbon deposition using

a microwave CAP reactor, 1036Soft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068x

Precursor design in c-BN growth, 1300High rate of diamond deposition through graphite etching in a hot

filament CVD reactor, 1337Electron spin resonance investigation of ion-irradiated diamond,

1391Effects of sp2�sp3 bonding ratios on field emission properties

of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429

Kinetics of diamond spontaneous crystallization from the melt ofthe Fe�Al�C system at 6.5 GPa, 1769

Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897

Diamond adhesionDiamond nucleation and adhesion on sintered nitride ceramics,

1731

Diamond and steelDiamond tools for wire sawing metal components, 742

Diamond coated toolsQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the

cutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Diamond CVDA new method of formation of impurity-doped diamond films by

bias method, 1804

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Diamond defectsSurface conductivity of nitrogen-doped diamond, 359Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612Characterisation of electron irradiated boron-doped diamond, 681

Diamond depositionA process for continuous manufacturing of diamond in atmosphere,

1479Diamond nucleation and adhesion on sintered nitride ceramics,

1731

Diamond electrodeFactors controlling the electrochemical potential window for

diamond electrodes in non-aqueous electrolytes, 67Square wave voltammetry on boron-doped diamond electrodes for

analytical determinations, 1670

Diamond electrodesElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640

Diamond filmThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405Diagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562On effectiveness of various surface treatments on adhesion of

HF-CVD diamond coating to tungsten carbide inserts, 1660

Diamond filmsComposite diamond films with smooth surface and the structural

influence on dielectric properties, 228Synchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371

The origin of charge transients in Al�undoped diamond�p-Sidiodes, 400

Influence of material properties on the performance of diamondphotocathodes, 437

Electrical properties of graphite�homoepitaxial diamond contact,451

Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001substrates by positively biased pretreatment, 509

Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523

Very adherent CVD diamond film on modified molybdenum sur-face, 532

Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550

Polycrystalline diamond synthesis by means of high power pulsedplasma glow discharge CVD, 573

Analysis of the growth process of diamond films by chemical vapordeposition, 584

The cavity ring-down spectroscopy of C in a microwave plasma,2608

Abrasive stripping voltammetry of silver and tin at boron-dopeddiamond electrodes, 646

Electrochemical activity of boron-doped diamond electrodes grownon carbon fiber cloths, 657

Optical brazing technique for bonding diamond films to zincsulfide, 753

Ion beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4gas mixtures, 833

Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837

Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856

Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953

Calculated energies of adsorption of non-hydrocarbon species onŽ .diamond H�C 1 1 1 surface and the abstraction energies of

these species abstracted by hydrogen atoms using ab initiocalculation,

1560Characterization of boron doped CVD diamond films by Raman

spectroscopy and X-ray diffractometry, 1578Electrochemical behaviour of graphite- and molybdenum

electrodes modified with thin-film diamond, 1690Ohmic contacts on diamond by B ion implantation and Ta�Au

metallization, 1709The effect of nitriding on the diamond film characteristics on

chromium substrates, 1760Nanolithographic modification of diamond, 1788Study on the growth of CVD diamond thin films by in situ

reflectivity measurement, 1871

Diamond growth² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596Diamond microwave micro relay, 672

Diamond growth and characterisationInvestigation on boron-doped CVD samples, 338Bias assisted growth on diamond single crystals: the defect

formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487

Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3

493Microwave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519Dependence of the growth rate, quality, and morphology of

diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

Diamond growth and characterizationThe large area deposition of diamond by the multi-cathode direct

Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463

Ž .The formation of a 111 texture of the diamond film onPt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

Growth of high-quality homoepitaxial diamond films by HF-CVD,504

CVD diamond deposition on steel using arc-plated chromiumnitride interlayers, 536

Studies of pulse operation regime of microwave plasma CVDreactor, 579

Diamond latticeStructure of diamond single crystals of different origins studies

by Kossel’s method, 882

Diamond like carbonCarbon based coatings for high temperature cutting tool

applications, 176

Diamond MEMSDiamond microwave micro relay, 672

Diamond nucleationDiamond nucleation and adhesion on sintered nitride ceramics,

1731

Diamond on steelHigh temperature diffusion chromizing as a successful method for

CVD-diamond coating of steel, 757

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Diamond properties and applicationsSchottky junction properties of the high conductivity layer of

diamond, 355RF performance of surface channel diamond FETs with sub-micron

gate length, 382Fabrication of diamond single-hole transistors using AFM

anodization process, 387UV photodetector from Schottky diode diamond film, 442Optimised contact-structures for metal�diamond�metal UV-

detectors, 458Relaxation in undoped polycrystalline CVD diamond films under

red illumination, 635Effect of substrate grain size and surface treatments on the

cutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Diamond tools for wire sawing metal components, 742Electron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Wettability and surface energy of oxidized and hydrogenplasma-treated diamond films, 845

Stimulated desorption of D� from diamond: surface versussub-surface processes via resonance dissociative electronattachment, 867

Engineering properties of fully sp3- to sp2-bonded carbonfilms and their modifications after post-growth ionirradiation, 1095

Diamond thin filmsDirect fusion bonding of silicon to polycrystalline diamond, 482

Diamond toolsDiamond tools in stone and civil engineering industry: cutting

principles, wear and applications, 736

Diamond wearDiamond tools in stone and civil engineering industry: cutting

principles, wear and applications, 736

Diamond-coated toolsEffect of WC grain growth inhibitors on the adhesion of chemical

vapor deposition diamond films on WC�Co cemented carbide,242

Diamond-coated tools and filmsThermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703

Diamond-like carbonE and H regimes of plasma enhanced chemical vapor deposition

of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92

Time-dependent in-situ Raman observation of atomic hydrogenetching on diamond-like carbon films, 262

Can we reliably estimate the emission field and field enhancementfactor of carbon nanotube film field emitters?, 763

Field emission and Raman spectroscopy studies of atomic hydrogenetching on boron and nitrogen doped DLC films, 804

Effect of nanostructure and back contact material on the fieldemission properties of carbon films, 819

Characteristics of hydrogenated amorphous carbon films depositedby large-area microwave-sustained surface wave plasma, 976

Structural characterization of hard a-C:H films as a function ofthe methane pressure, 980

Plasma chemistry during deposition of a-C:H, 989Is stress necessary to stabilise sp3 bonding in diamond-like

carbon?, 994Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010

High pressure diamond and diamond-like carbon deposition usinga microwave CAP reactor, 1036

Deposition and properties of amorphous carbon phosphide films,1041

Pulsed PECVD deposition of diamond-like carbon films, 1047Determination of bonding in diamond-like carbon by Raman

spectroscopy, 1053Elastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062Highest optical gap tetrahedral amorphous carbon, 1086Inert gas diffusion in DLC�Si films, 1091DLC composite thin films by sputter deposition, 1119Tribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130Friction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135Deposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178Optical, anti-reflective and protective properties of diamond and

diamond-like carbon films, 1329Diamond-like carbon films deposited by electron beam excited

plasma chemical vapor deposition, 1353Elastic modulus and structural evolution of diamond-like carbon

films deposited by RF-PACVD, 1441Effect of ion energy on degradation of diamond-like carbon films

exposed to high-energy bombardment from an ion implanter,1447

Diagnosis of dielectric barrier discharge CH plasmas for4

diamond-like carbon film deposition, 1491Threshold effect of admixtures of platinum on the electrochemical

activity of amorphous diamond-like carbon thin films, 1518DLC-based wear protection on magnetic storage media, 1781Structural, mechanical and tribological properties of diamond-like

carbon films prepared under different substrate bias voltage,1837

Spin density in hydrogenated amorphous carbon films�differentoriginations, 1848

Ž .Diamond-like carbon DLCTribological properties of Al�Si�Cu�Mg alloy-based composite-

dispersing diamond nanocluster, 749A new method for evaluating the scratch resistance of diamond-like

carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on

Ti alloy substrate by nano-scratch technique, 1505

Ž .Diamond-like carbon DLC filmEIS capacitance diagnosis of nanoporosity effect on the corrosion

protection of DLC films, 160

Diamond-like carbon filmElectrochemical tests on the carbon protective layer of a hard

disk, 1409

Diamond-like carbon filmsOptical characterization of diamond-like carbon films using

multi-sample modification of variable angle spectroscopicellipsometry, 105

Diamond-like-carbonEffects of sp2�sp3 bonding ratios on field emission properties

of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429

Diamond-like-carbon coatingsDelamination and spalling of diamond-like-carbon tribological

surfaces, 1797

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Dielectric barrier dischargeDiagnosis of dielectric barrier discharge CH plasmas for4

diamond-like carbon film deposition, 1491

Dielectric constantCharacterization of boron carbon nitride films with a low

dielectric constant, 985

Dielectric propertiesComposite diamond films with smooth surface and the structural

influence on dielectric properties, 228

DiffusionRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618Inert gas diffusion in DLC�Si films, 1091The effect of nitriding on the diamond film characteristics on

chromium substrates, 1760

Diffusion barrierHigh temperature diffusion chromizing as a successful method for

CVD-diamond coating of steel, 757

DiodeFormation of diamond p�n junction and its optical emission

characteristics, 307The origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

Ž .Direct current DC plasmaThe large area deposition of diamond by the multi-cathode direct

Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463

Dislocation networksPlanar defects and dislocations in HPHT as-grown diamond

crystals, 268

DislocationsThe dislocations of low-angle grain boundaries in GaN epilayers: a

HRTEM quantitative study and finite element stress statecalculation, 910

DLCInvestigating the fracture resistance and adhesion of DLC films

with micro-impact testing, 1606

DLTSIon implantation of sulphur, boron and nitrogen in diamond: a

charge-based deep level transient spectroscopic investigation,342

Dope methodA new method of formation of impurity-doped diamond films by

bias method, 1804

DopingIon implantation of sulphur, boron and nitrogen in diamond: a

charge-based deep level transient spectroscopic investigation,342

Doping p-typeElectrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657

Dose dependencePhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

EACVDMonte Carlo simulation of spatial distribution of atomic hydrogen

in electron assisted CVD, 1648

Elastic modulusElastic modulus and structural evolution of diamond-like carbon

films deposited by RF-PACVD, 1441

Electrical conductivityInfluence of annealing on the electronic properties of chemical

vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212

Application of two- and four-point contact probes to variousmonocrystalline diamond surfaces, 332

Space-charge-limited current in hydrogenated amorphous carbonfilms containing silicon and oxygen, 1753

Electrical double-layer capacitanceFactors controlling the electrochemical potential window for

diamond electrodes in non-aqueous electrolytes, 67

Electrical potential windowFactors controlling the electrochemical potential window for

diamond electrodes in non-aqueous electrolytes, 67

Electrical propertiesInfluence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263Nanolithographic modification of diamond, 1788

ElectroanalysisSquare wave voltammetry on boron-doped diamond electrodes for

analytical determinations, 1670

Electrochemical characterizationElectrochemical tests on the carbon protective layer of a hard

disk, 1409

Electrochemical impedanceThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Ž .Electrochemical impedance spectroscopy EISEIS capacitance diagnosis of nanoporosity effect on the corrosion

protection of DLC films, 160

Electrochemical kineticsThreshold effect of admixtures of platinum on the electrochemical

activity of amorphous diamond-like carbon thin films, 1518

Electrochemical reversibilityKinetics study of diamond electrodes at different levels of boron

doping as quasi-reversible systems, 1523

ElectrochemistryElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640Abrasive stripping voltammetry of silver and tin at boron-doped

diamond electrodes, 646Electrochemical behaviour of graphite- and molybdenum

electrodes modified with thin-film diamond, 1690

ElectrodeThreshold effect of admixtures of platinum on the electrochemical

activity of amorphous diamond-like carbon thin films, 1518

Electrode arrangementElectrochemical activity of boron-doped diamond electrodes grown

on carbon fiber cloths, 657Kinetics study of diamond electrodes at different levels of boron

doping as quasi-reversible systems, 1523

Electron cyclotron resonanceElectron cyclotron resonance plasma-assisted pulsed laser

deposition of boron carbon nitride films, 1623

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Ž .Electron cyclotron resonance ECRGrowth mechanism and properties of the large area well-aligned

carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922

Ž .Electron cyclotron resonance chemical vapor deposition ECR-CVDMorphology and characterization of highly nitrogenated, aligned,

amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193

Electron cyclotron resonance chemical vapour depositionOn the bonding structure of hydrogenated carbon nitrides grown

by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161

Electron cyclotron resonance microwave plasma chemical vapordeposition

Effects of substrate bias on nanotribologyof a-C:H films depositedby ECR-MPCVD, 1653

Electron diffractionCharacterisation of cold electron emitting carbonaceous films

containing Ni metallic nanocrystals, 809Study of the structure of hard graphite-like amorphous carbon

films by electron diffraction, 1467

Electron emissionGrowth of homoepitaxial diamond doped with nitrogen for electron

emitter, 257

Electron energy loss spectroscopyCharacterisation of smooth fine-grained diamond coatings on

titanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544

Ru-doped nanostructured carbon films, 1890

Electron field emissionElectron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Electron irradiationPhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

Electron microscopyThe dislocations of low-angle grain boundaries in GaN epilayers: a

HRTEM quantitative study and finite element stress statecalculation, 910

Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x

Novel BN tassel-like and tree-like nanostructures, 1397Direct growth of c-BN on a mono-structured transition layer by

plasma-enhanced chemical vapor deposition, 1854Ru-doped nanostructured carbon films, 1890

Electron spectroscopySynchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371

Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x

Electron spin resonanceHighest optical gap tetrahedral amorphous carbon, 1086

Ž .Electron spin resonance ESRElectron spin resonance investigation of ion-irradiated diamond,

1391

Electron stimulated desorptionStimulated desorption of D� from diamond: surface versus

sub-surface processes via resonance dissociative electron attach-ment, 867

Electron-assisted chemical vapor depositionDiamond deposition at low temperature by using CH �H gas4 2

mixture, 1697

Electron-spin-resonanceParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143

Electronic statesSurface conductivity of nitrogen-doped diamond, 359

Electronic structureInvestigation on boron-doped CVD samples, 338

ElectrophoresisTheory of electrodeposition of diamond nanoparticles, 1572

EllipsometryOptical characterization of diamond-like carbon films using

multi-sample modification of variable angle spectroscopicellipsometry, 105

Analysis of the role of fluorine content on the thermal stabilityof a-C:H:F thin films, 1100

Spectroscopic ellipsometry studies on BN films from IR to vacuumUV energy region, 1281

Emission mechanismField emission site density studies of amorphous carbon films,

1422

Emission sitesField emission site density studies of amorphous carbon films,

1422

Emission spectroscopyIn situ diagnosis of chemical species for the growth of carbon

nanotubes in microwave plasma-enhanced chemical vapordeposition, 59

Energy distributionRole of adsorbates in field emission from nanotubes, 769

Epitaxial filmsOptical investigation of Al Ga N epitaxial films grown onx 1�x

AlN buffer layers, 892

EPREPR studies of a nickel�boron centre in synthetic diamond, 627

EquilibriumTheory of electrodeposition of diamond nanoparticles, 1572

Etching� 4Simulation of step patterns on natural diamond 111 surfaces, 145

Preparation and properties of sub-micron thick and free-standingdiamond membranes, 721

Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837

Ž .The oxidation of 100 textured diamond, 861Calculated energies of adsorption of non-hydrocarbon species on

Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initio

calculation,1560

The action of iron particles at catalyzed hydrogenation of naturaldiamond, 1592

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EvaporationOptical brazing technique for bonding diamond films to zinc

sulfide, 753

FatigueInvestigating the fracture resistance and adhesion of DLC films

with micro-impact testing, 1606

Fe�Al�C systemKinetics of diamond spontaneous crystallization from the melt of

the Fe�Al�C system at 6.5 GPa, 1769

Fe N solvent-catalyst3HPHT synthesis of diamond with high nitrogen content from an

Fe N�C system, 18633

FETRF performance of surface channel diamond FETs with sub-micron

gate length, 382

FibresIn situ kinetic analysis of SiC filaments CVD, 1234

Fibres, Transmission electron microscopy, sp3-BondingTransmission electron microscopy studies of nanofibers formed on

Fe C -carbide, 9317 3

Field emissionField emission property of chemical vapor deposited diamond

overlayer films, 185Time-dependent in-situ Raman observation of atomic hydrogen

etching on diamond-like carbon films, 262Can we reliably estimate the emission field and field enhancement

factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Enhanced low-temperature thermionic field emission from

surface-treated N-doped diamond films, 774Electron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780Field emission from carbon films deposited on stainless steel

substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788Field emission, structure, cathodoluminescence and formation

studies of carbon and Si�C�N nanotubes, 793Field emission and Raman spectroscopy studies of atomic hydrogen

etching on boron and nitrogen doped DLC films, 804Defect induced lowering of work function in graphite-like

materials, 813Effect of nanostructure and back contact material on the field

emission properties of carbon films, 819Smooth and high-rate reactive ion etching of diamond, 824Characteristics of hydrogenated amorphous carbon films deposited

by large-area microwave-sustained surface wave plasma, 976Characteristics of nickel-containing carbon films deposited using

electron cyclotron resonance CVD, 1031Field emission site density studies of amorphous carbon films,

1422Effects of sp2�sp3 bonding ratios on field emission properties

of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429

Fabrication of vertically aligned carbon nanotubes patterns bychemical vapor deposition for field emitters, 1638

Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897

Field emission displayField emission display with carbon nanotubes cathode: prepared by

a screen-printing process, 1845

Field emitterGrowth of homoepitaxial diamond doped with nitrogen for electron

emitter, 257

FilmsLow energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026

Filtered arc depositionSubstrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227

Filtered vacuum arcStructure and properties of Si incorporated tetrahedral amorphous

carbon films prepared by hybrid filtered vacuum arc process, 198

Flexural strengthDiamond windows and domes: flexural strength and thermal shock,

218

Floating catalyst methodGrowth mechanism of Y-junction carbon nanotubes, 1349

Flow controllerFabrication of diamond flow controller micronozzles, 237

FluorineAnalysis of the role of fluorine content on the thermal stability

of a-C:H:F thin films, 1100Fluorinated a-C:H films investigated by thermal-induced gas

effusion, 1831

Focused ion beam microscopeDelamination and spalling of diamond-like-carbon tribological

surfaces, 1797

Ž .Fourier transform infrared FT-IR spectroscopic ellipsometryVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183

FractureInvestigating the fracture resistance and adhesion of DLC films

with micro-impact testing, 1606

Fracture stressThe fracture stress of chemical vapour deposited diamond, 1913

Free overhang methodElastic modulus and structural evolution of diamond-like carbon

films deposited by RF-PACVD, 1441

Free standingPreparation and properties of sub-micron thick and free-standing

diamond membranes, 721

Freestanding diamond filmsMechanical analysis for crack-free release of chemical-

vapor-deposited diamond wafers, 1597

FrictionTribological behaviour and chemical characterisation of Si-free

and Si-containing carbon nitride coatings, 169Tribological properties of Al�Si�Cu�Mg alloy-based composite-

dispersing diamond nanocluster, 749Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphous carbonthin films, 1005

Carbon nitride films with low friction coefficient synthesized bynitrogen-ion-beam-assisted pulsed laser deposition, 1629

Effect of film thickness on the stress and adhesion ofdiamond-like carbon coatings, 1643

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Structural, mechanical and tribological properties of diamond-likecarbon films prepared under different substrate bias voltage,1837

Friction coefficientFriction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135

Frontier orbital theoryReactivity of different tBN environments serving as reaction sites

in cBN film deposition, 1416

FT-IRThe effect of ammonia�dimethylamine ratio in deposition of

hydrogenated CN films by PE-HF-CVD, 1905x

FTIRInfluence of nucleation on hydrogen incorporation in CVD

diamond films, 527

FTIR spectroscopyŽ .Enhancement of 100 texture in diamond films grown using a

temperature gradient, 1403

FullereneMolecular dynamics calculation of H gas storage in C and2 60

B N clusters, 94536 36

FullerenesCharacterisation of cold electron emitting carbonaceous films

containing Ni metallic nanocrystals, 809

Fusion bondingDirect fusion bonding of silicon to polycrystalline diamond, 482

Gallium nitrideGaN-based heterostructures for sensor applications, 886

Ž .Gallium nitride GaNAtomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905

GaNŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901

Grain SizeSize and temperature dependence of nanodiamond�nanographite

transition related with surface stress, 234Surface acoustic waves on nanocrystalline diamond, 677

GraphiteSize and temperature dependence of nanodiamond�nanographite

transition related with surface stress, 234Pulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953Formation of diamond from CaCO in a reduced C�O�H fluid at3

HP�HT, 1496Electrochemical behaviour of graphite- and molybdenum

electrodes modified with thin-film diamond, 1690

Graphite etchingHigh rate of diamond deposition through graphite etching in a hot

filament CVD reactor, 1337

Graphite-like carbonStudy of the structure of hard graphite-like amorphous carbon

films by electron diffraction, 1467

GraphitizationThermal decomposition of glucose and diamond formation under

diamond-stable high pressure�high temperature conditions, 118

Effect of heat treatment on the properties of nano-diamond underoxygen and argon ambient, 249

Growth� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328Nanometer rough, sub-micrometer-thick and continuous diamond

chemical vapor deposition film promoted by a synergeticultrasonic effect, 545

Growth mechanism of amorphous hydrogenated carbon, 969IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Study on the growth of CVD diamond thin films by in situ

reflectivity measurement, 1871

Growth rateThe effect of the growth rate on the concentration of nitrogen and

transition metal impurities in HPHT synthetic diamonds, 204Dependence of the growth rate, quality, and morphology of

diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

H�C�N chemistryInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567

H gas storage2Molecular dynamics calculation of H gas storage in C and2 60

B N clusters, 94536 36

Hall effectLow temperature properties of the p-type surface conductivity of

diamond, 351

Hall mobilityClassical approximations for ionised impurity scattering applied

to diamond monocrystals, 686

Hard materialPlasma enhanced deposition of silicon carbonitride thin films and

property characterization, 16

HardmetalDiamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555

HardnessMechanical and tribological properties of CN films deposited byx

reactive pulsed laser ablation, 98High-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280Structural characterization of hard a-C:H films as a function of

the methane pressure, 980The effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Optical strength in UV region of amorphous carbon, 1106Characterisation of silicon carbide and silicon nitride thin films

and Si N �SiC multilayers, 12483 4Synthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290Diamond-like carbon films deposited by electron beam excited

plasma chemical vapor deposition, 1353

HardnesssSubstrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227

Heat treatmentEffect of heat treatment on the properties of nano-diamond under

oxygen and argon ambient, 249

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Heated filamentThe origin of charge transients in Al�undoped diamond�p-Si

diodes, 400

Heteroepitaxial diamondŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

Heteroepitaxial interfaceEpitaxial interface of nanocrystalline TiC formed between

Cu-10Sn-15Ti alloy and diamond, 1366

HeteroepitaxyŽ .Fabrication of heteroepitaxial diamond thin films on Ir 001 �

Ž .MgO 001 substrates using antenna-edge-type microwaveplasma-assisted chemical vapor deposition, 478

Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3

493Electron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780Heteroepitaxial growth of erbium carbide on boron doped

Ž .homoepitaxial diamond 100 films, 1332

HF-CVDGrowth of high-quality homoepitaxial diamond films by HF-CVD,

504

HF-CVD diamondRaman, photoluminescence and morphological studies of Si- and

Ž .N-doped diamond films grown on Si 100 substrate by hot-filament chemical vapor deposition technique, 75

High deposition rateHigh rate of diamond deposition through graphite etching in a hot

filament CVD reactor, 1337

High pressureNanocrystalline diamond directly transformed from carbon

nanotubes under high pressure, 87Kinetics of diamond spontaneous crystallization from the melt of

the Fe�Al�C system at 6.5 GPa, 1769Synthesis of nanocrystalline nitrogen-rich carbon nitride powders

at high pressure, 1885

High pressure and high temperatureThermal decomposition of glucose and diamond formation under

diamond-stable high pressure�high temperature conditions, 118

High pressure crystal growthPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573

High pressure high temperatureHigh-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280Modelling transition metals in diamond, 631Formation of diamond from CaCO in a reduced C�O�H fluid at3

HP�HT, 1496

High pressure plasmaDiagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562

High resolution electron spectroscopySurface vibrations on clean, deuterated, and hydrogenated single

Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365

High resolution scanning electron microscopy

Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858

High temperatureNanocrystalline diamond directly transformed from carbon

nanotubes under high pressure, 87

Ž .High-pressure high-temperature HPHT diamondSpectroscopic study of HPHT synthetic diamonds, as grown at

1500�C, 22

Highly nitrogenated amorphous carbon nitrideMorphology and characterization of highly nitrogenated, aligned,

amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193

Homoepitaxial diamondElectrical properties of MgO�p-diamond junction fabricated on

homoepitaxial single-crystalline diamond, 1952

HomoepitaxyGrowth of homoepitaxial diamond doped with nitrogen for electron

emitter, 257n-Type doping of diamond by sulfur and phosphorus, 289Photoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Growth of high-quality homoepitaxial diamond films by HF-CVD,

504Analysis of the growth process of diamond films by chemical vapor

deposition, 584Classical approximations for ionised impurity scattering applied

to diamond monocrystals, 686Nanolithographic modification of diamond, 1788

Hot filamentHigh rate of diamond deposition through graphite etching in a hot

filament CVD reactor, 1337

Hot filament chemical vapour depositionApplication of diamond coatings onto small dental tools, 731

Hot-filament CVDInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2

mixtures, 567Electron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Hot-filament depositionInteractions of Ta-filaments during hot-filament CVD of

BCN-layers, 191

HPHT annealingReport on the influence of HPHT annealing on the 3107cm�1

hydrogen related absorption peak in natural type Ia diamonds,714

HPHT diamondHPHT synthesis of diamond with high nitrogen content from an

Fe N�C system, 18633

HREMArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

HRTEMIon beam assisted growth of c-BN films on top of c-BN substrates

� a HRTEM study, 38

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HTP diamondEPR studies of a nickel�boron centre in synthetic diamond, 627

Hybrid r.f.-PACVD and magnetron sputteringMicrostructure and mechanical properties of WC�C nano-

composite films, 1747

HydrogenInfluence of annealing on the electronic properties of chemical

vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212

Surface vibrations on clean, deuterated, and hydrogenated singleŽ .crystal diamond 100 surfaces studied by high-resolution electron

energy loss spectroscopy, 365Influence of nucleation on hydrogen incorporation in CVD

diamond films, 527Dependence of the growth rate, quality, and morphology of

diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

Detection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662Report on the influence of HPHT annealing on the 3107cm�1

hydrogen related absorption peak in natural type Ia diamonds,714

Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856

Hydrogen in n-type diamond, 1566The action of iron particles at catalyzed hydrogenation of natural

diamond, 1592

Ž .Hydrogen deuteriumSynchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371

Hydrogen contentŽ .Enhancement of 100 texture in diamond films grown using a

temperature gradient, 1403

Hydrogen diffusionDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316

Hydrogen etchingTime-dependent in-situ Raman observation of atomic hydrogen

etching on diamond-like carbon films, 262Field emission and Raman spectroscopy studies of atomic hydrogen

etching on boron and nitrogen doped DLC films, 804

Hydrogen terminated diamondLow temperature properties of the p-type surface conductivity of

diamond, 351

Hydrogen-related shallow acceptorSchottky junction properties of the high conductivity layer of

diamond, 355

Hydrogenated amorphous carbonPlasma chemistry during deposition of a-C:H, 989

Hydrogenated carbon nitrideOn the bonding structure of hydrogenated carbon nitrides grown

by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161

HydrogenationBlack diamond: a new material for active electronic devices, 396Wettability and surface energy of oxidized and hydrogen

plasma-treated diamond films, 845

I�VElectrical properties of MgO�p-diamond junction fabricated on

homoepitaxial single-crystalline diamond, 1952

IBADIon beam assisted growth of c-BN films on top of c-BN substrates

� a HRTEM study, 38

ImpactInvestigating the fracture resistance and adhesion of DLC films

with micro-impact testing, 1606

Impuritiesn-Type doping of diamond by sulfur and phosphorus, 289Theoretical modeling of sulfur�hydrogen complexes in diamond,

323Surface conductivity of nitrogen-doped diamond, 359

In situIn situ kinetic analysis of SiC filaments CVD, 1234Study on the growth of CVD diamond thin films by in situ

reflectivity measurement, 1871

In situ characterisationIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

In situ diagnosticsIn situ plasma diagnostics of the chemistry behind sulfur doping

of CVD diamond films, 301

In situ examinationCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

In situ studyKinetics of diamond spontaneous crystallization from the melt of

the Fe�Al�C system at 6.5 GPa, 1769

Inductively coupled plasmaE and H regimes of plasma enhanced chemical vapor deposition

of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92

Infra redAbstraction of hydrogen atoms on diamond surface using benzoyl

peroxide as a radical initiator, 1374

InfraredInvestigation on boron-doped CVD samples, 338Optical brazing technique for bonding diamond films to zinc

sulfide, 753Relation between stress in cubic boron nitride films and the

in-plane TO phonon energy, 1532

Ž .Infrared IR spectroscopyAnalysis of the role of fluorine content on the thermal stability

of a-C:H:F thin films, 1100

Ž .Infrared IR transmissionThe large area deposition of diamond by the multi-cathode direct

Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463

Ž .Infrared IR windowsDiamond windows and domes: flexural strength and thermal shock,

218

Infrared absorptionUltraviolet photoluminescence and its relation to atomic bonding

properties of hydrogenated amorphous carbon, 53

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InsulatorHigh resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219

Integrated circuitThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405

InterfaceEffect of WC grain growth inhibitors on the adhesion of chemical

vapor deposition diamond films on WC�Co cemented carbide,242

Electrical properties of graphite�homoepitaxial diamond contact,451

Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

GaN-based heterostructures for sensor applications, 886Stoichiometry and interface effects on the electronic and optical

properties of SiC nanoparticles, 1243

Interface�InterfacialOhmic contacts on diamond by B ion implantation and Ta�Au

metallization, 1709

Interfacial adhesionMechanical analysis for crack-free release of chemical-vapor-

deposited diamond wafers, 1597

InterlayerCVD diamond deposition on steel using arc-plated chromium

nitride interlayers, 536

Internal stressŽ .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172Effect of film thickness on the stress and adhesion of

diamond-like carbon coatings, 1643

Ion assisted depositionŽ .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205Modulated CN films prepared by IBAD, 1552x

Ion beam assisted depositionXPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x1149

Ion beam etchingIon beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4

gas mixtures, 833

Ion bombardmentAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513Influences of substrate bias on the composition and structure of

carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584

Ion channellingBias assisted growth on diamond single crystals: the defect

formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487

Ion energyEffect of ion energy on degradation of diamond-like carbon films

exposed to high-energy bombardment from an ion implanter,1447

Ion implantationIon implantation of sulphur, boron and nitrogen in diamond: a

charge-based deep level transient spectroscopic investigation,342

Implantation-doping of diamond with B�, C�, N� and O� ionsusing low temperature annealing, 612

Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837

Investigation of ion implantation-induced damage in the carbonand silicon sublattices of 6H-SiC, 1239

XPS studies on silicon carbonitride films prepared by sequentialimplantation of nitrogen and carbon into silicon, 1676

Ion irradiationEngineering properties of fully sp3- to sp2-bonded carbon

films and their modifications after post-growth ionirradiation, 1095

Electron spin resonance investigation of ion-irradiated diamond,1391

Ion-assisted depositionDeposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896

Ion-beam depositionCarbon films obtained from a C fullerene ion beam, 96460

Ion-implantationNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,

1344

IRDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Reactivity of the hydrogen atoms on diamond surface with various

radical initiators in mild condition, 1360

IR absorptionHPHT synthesis of diamond with high nitrogen content from an

Fe N�C system, 18633

IridiumŽ .Fabrication of heteroepitaxial diamond thin films on Ir 001 �

Ž .MgO 001 substrates using antenna-edge-type microwaveplasma-assisted chemical vapor deposition, 478

Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3

493

Kinetics of crystallizationKinetics of diamond spontaneous crystallization from the melt of

the Fe�Al�C system at 6.5 GPa, 1769

Kossel’s linesStructure of diamond single crystals of different origins studies

by Kossel’s method, 882

LaserNew technology for high rate synthesis of PC-diamond coatings in

air with photon plasmatron, 472Pulsed laser deposition of CN films: role of r.f. nitrogenx

plasma activation for the film structure formation, 1223

Laser ablationMechanical and tribological properties of CN films deposited byx

reactive pulsed laser ablation, 98Excimer laser ablation of silicon carbide ceramic targets, 273

Laser ablation depositionDependence of the composition and bonding structure of carbon

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nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511

Laser evaporationA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Laser processingOptical strength in UV region of amorphous carbon, 1106

Laser reflection interferometryIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

Lattice distortionEpitaxial interface of nanocrystalline TiC formed between

Cu-10Sn-15Ti alloy and diamond, 1366

Lattice parameterCharacterization of boron doped CVD diamond films by Raman

spectroscopy and X-ray diffractometry, 1578

Low temperatureDiamond deposition at low temperature by using CH �H gas4 2

mixture, 1697

Low temperature magneto-transportLow temperature properties of the p-type surface conductivity of

diamond, 351

Low-kHigh resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219

LuminescenceUltraviolet photoluminescence and its relation to atomic bonding

properties of hydrogenated amorphous carbon, 53Optical characterization of natural Argyle diamonds, 125Formation of diamond p�n junction and its optical emission

characteristics, 307Growth of high-quality homoepitaxial diamond films by HF-CVD,

504

MagnetoresistanceMagnetoresistance of boron-doped chemical vapor deposition

polycrystalline diamond films, 49

Magnetron sputteringVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183

Effect of plasma parameters on the structure of CN layersxdeposited by DC magnetron sputtering, 1200

Mass spectrometryIn situ diagnosis of chemical species for the growth of carbon

nanotubes in microwave plasma-enhanced chemical vapordeposition, 59

In situ characterisation of CVD diamond growth under H S2addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301

Fluorinated a-C:H films investigated by thermal-induced gaseffusion, 1831

Mass-separated ion beam depositionTribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130

Mechanical and electrical propertiesMicrostructure and mechanical properties of WC�C nano-

composite films, 1747

Mechanical propertiesCarbon based coatings for high temperature cutting tool

applications, 176Surface acoustic waves on nanocrystalline diamond, 677Structural characterization of hard a-C:H films as a function of

the methane pressure, 980Properties of W�a-C nanometric multilayers produced by

RF-pulsed magnetron sputtering, 1000Mechanical properties and performance of magnetron-sputtered

graded diamond-like carbon films with and without metaladditions, 1139

Mechanical stressStresses in pulsed laser deposited cubic boron nitride films, 1276

MESFETNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,

1344

MetalTribological properties of Al�Si�Cu�Mg alloy-based composite-

dispersing diamond nanocluster, 749The action of iron particles at catalyzed hydrogenation of natural

diamond, 1592

Ž .Metal plasma ion implantation MPIIEffect of ion energy on degradation of diamond-like carbon films

exposed to high-energy bombardment from an ion implanter,1447

Ž .Metal vapor vacuum arc MEVVAEffect of ion energy on degradation of diamond-like carbon films

exposed to high-energy bombardment from an ion implanter,1447

MgO filmElectrical properties of MgO�p-diamond junction fabricated on

homoepitaxial single-crystalline diamond, 1952

MgO�p-diamond junctionElectrical properties of MgO�p-diamond junction fabricated on

homoepitaxial single-crystalline diamond, 1952

Micro Raman spectroscopyPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573Detection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662

Micro relayDiamond microwave micro relay, 672

Micro switchDiamond microwave micro relay, 672

Micro-beamImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418

Micro-Raman spectroscopyEffect of WC grain growth inhibitors on the adhesion of chemical

vapor deposition diamond films on WC�Co cemented carbide,242

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MicrodischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc

discharge technique, 914

MicromachiningDiamond membrane based structures for miniature X-ray sources,

1

MicronozzleFabrication of diamond flow controller micronozzles, 237

MicrostructureHigh-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280Nanometer rough, sub-micrometer-thick and continuous diamond

chemical vapor deposition film promoted by a synergetic ultra-sonic effect, 545

Thermal diffusivity in diamond, SiC N and BC N , 708x y x ySoft X-ray photoelectron microscopy used for the characterization

of diamond, a-C and CN , thin films, 1068xŽ .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205Diamond-like carbon films deposited by electron beam excited

plasma chemical vapor deposition, 1353Microstructure of diamond-like carbon films prepared by cathodic

arc deposition, 1436Nanoporosity in plasma deposited amorphous carbon films

investigated by small-angle X-ray scattering, 1946

Microstructure evolutionMicrostructure and mechanical properties of WC�C nano-

composite films, 1747

MicrowaveHigh pressure diamond and diamond-like carbon deposition using

a microwave CAP reactor, 1036

Microwave plasmaThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467Diagnostics of plasma ball formed in high pressure microwave

plasma for diamond film synthesis, 562

Microwave plasma chemical vapor depositionSynthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2Hydrogen in n-type diamond, 1566

Microwave plasma chemical vapor deposition diamondCVD diamond nucleation enhanced by ultrasonic pretreatment

using diamond and mixture of diamond and TaC powders, 1683

Microwave plasma enhanced chemical vapor depositionThe effect of catalysis on the formation of one-dimensional carbon

structured materials, 1019

MigrationThe kinetics of the capture of nitrogen by nickel defects in

diamond, 312Ž .Growth and characterization of SiC micro-crystals on Si 100

substrate by the chemical vapor deposition method, 1703

MIM structureField emission property of chemical vapor deposited diamond

overlayer films, 185

MISFETDC and RF characteristics of 0.7-�m-gate-length diamond

metal�insulator�semiconductor field effect transistor, 378

MM-wavesThe absorption investigation in CVD-diamond plates and windows

at 50�200 GHz, 1485

MobilityClassical approximations for ionised impurity scattering applied

to diamond monocrystals, 686The enhancement of interconnected sp3 sites by chemical effects

during ta-C film growth, 1721

Mode transitionsE and H regimes of plasma enhanced chemical vapor deposition

of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92

ModelingAtomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905Calculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010From �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268Spectroscopic ellipsometry studies on BN films from IR to vacuum

UV energy region, 1281Calculated energies of adsorption of non-hydrocarbon species on

Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initio

calculation,1560

ModellingInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567

Modelling strainModelling transition metals in diamond, 631

Modulated structureModulated CN films prepared by IBAD, 1552x

Moire images´Planar defects and dislocations in HPHT as-grown diamond

crystals, 268

Molecular beam mass spectrometryDiagnosis of dielectric barrier discharge CH plasmas for4

diamond-like carbon film deposition, 1491

Molecular dynamicsMolecular dynamics calculation of H gas storage in C and2 60

B N clusters, 94536 36

MolybdenumElectrochemical behaviour of graphite- and molybdenum

electrodes modified with thin-film diamond, 1690

Monte Carlo simulationMonte Carlo simulation of spatial distribution of atomic hydrogen

in electron assisted CVD, 1648

Monte-Carlo simulationDiamond deposition at low temperature by using CH �H gas4 2

mixture, 1697

Morphology² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596

MPECVDŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 x

vapor deposition, 499

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N doped CVD diamondPhotoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692

N impuritySpectroscopic study of HPHT synthetic diamonds, as grown at

1500�C, 22

n- Type doping� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,

328

n-type diamondHydrogen in n-type diamond, 1566

n-Type dopingn-Type doping of diamond by sulfur and phosphorus, 289Formation of diamond p�n junction and its optical emission

characteristics, 307Theoretical modeling of sulfur�hydrogen complexes in diamond,

323Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612

Nano porosityEIS capacitance diagnosis of nanoporosity effect on the corrosion

protection of DLC films, 160

Nano-diamondEffect of heat treatment on the properties of nano-diamond under

oxygen and argon ambient, 249

Nano-indentationEngineering properties of fully sp3- to sp2-bonded carbon

films and their modifications after post-growth ionirradiation, 1095

Nano-scratchA new method for evaluating the scratch resistance of diamond-like

carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on

Ti alloy substrate by nano-scratch technique, 1505

NanocapsulesArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

Nanocrystalline carbonElectron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Nanocrystalline diamondSynthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2

Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858

Ž .Nanocrystalline diamond NCD filmsRu-doped nanostructured carbon films, 1890

Nanocrystalline SiCStoichiometry and interface effects on the electronic and optical

properties of SiC nanoparticles, 1243

NanodiamondDetonation synthesis ultradispersed diamond structural properties

investigation by infrared absorption, 872Theory of electrodeposition of diamond nanoparticles, 1572

NanoindentationA new method for evaluating the scratch resistance of diamond-like

carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on

Ti alloy substrate by nano-scratch technique, 1505The effect of ammonia�dimethylamine ratio in deposition of

hydrogenated CN films by PE-HF-CVD, 1905x

NanoparticleTheory of electrodeposition of diamond nanoparticles, 1572

NanostructuresŽ .Growth and characterization of SiC micro-crystals on Si 100

substrate by the chemical vapor deposition method, 1703

NanotribologyEffects of substrate bias on nanotribologyof a-C:H films deposited

by ECR-MPCVD, 1653

NanotubeLarge scale synthesis of carbon nanotubes by plasma rotating arc

discharge technique, 914

NanotubesNanocrystalline diamond directly transformed from carbon

nanotubes under high pressure, 87Can we reliably estimate the emission field and field enhancement

factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Spectroscopic analysis of single-wall carbon nanotubes and carbon

nanotube peapods, 957

Natural diamondThe action of iron particles at catalyzed hydrogenation of natural

diamond, 1592

Natural diamondsOptical characterization of natural Argyle diamonds, 125

Ž .Near-edge X-ray absorption fine structure NEXAFSStructure of nitrogenated amorphous carbon films from NEXAFS,

8

Negative electron affinityA spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

Neutron reflectivityHydrogen concentrations and mass density obtained by X-ray and

neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

Ni impuritySpectroscopic study of HPHT synthetic diamonds, as grown at

1500�C, 22

Ni nano-crystalsCharacterisation of cold electron emitting carbonaceous films

containing Ni metallic nanocrystals, 809

Ni�Cu alloysThe effect of catalysis on the formation of one-dimensional carbon

structured materials, 1019

NickelOptical characterization of natural Argyle diamonds, 125The kinetics of the capture of nitrogen by nickel defects in

diamond, 312Annealing study of the formation of nickel-related paramagnetic

defects in diamond, 623Characteristics of nickel-containing carbon films deposited using

electron cyclotron resonance CVD, 1031

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Nickel-boron complexEPR studies of a nickel�boron centre in synthetic diamond, 627

NitrideArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

NitridesReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427Thermal conductivity enhancement in cutting tools by chemical

vapor deposition diamond coating, 703Optical investigation of Al Ga N epitaxial films grown onx 1�x

AlN buffer layers, 892Deposition of an InN thin film by a r.f. plasma-assisted reactive

Ž .ion-beam sputtering deposition R-IBSD technique, 896The dislocations of low-angle grain boundaries in GaN epilayers: a

HRTEM quantitative study and finite element stress statecalculation, 910

Molecular dynamics calculation of H gas storage in C and2 60B N clusters, 94536 36

XPS characterization of the composition and bonding states ofelements in CN layers prepared by ion beam assisted deposition,x

1149Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153The effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Effects of hydrogen incorporation on structural relaxation and

vibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Variation of nitrogen incorporation and bonding configuration ofcarbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183

Effect of plasma parameters on the structure of CN layersx

deposited by DC magnetron sputtering, 1200Preparation and properties of amorphous carbon oxy-nitride films

made by the layer-by-layer method, 1210Response time of photoconductivity of amorphous carbon nitride

films prepared by a nitrogen radical sputter method, 1215High resistivity and low dielectric constant amorphous carbon

nitride films: application to low-k materials for ULSI, 1219From �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268Stresses in pulsed laser deposited cubic boron nitride films, 1276X-Ray absorption study of the bonding structure of BCN

compounds enriched in carbon by CH ion assistance, 12954Influences of substrate bias on the composition and structure of

carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584

NitrogenThe effect of nitrogen addition to Ar�CH plasmas on the growth,4

morphology and field emission of ultrananocrystalline diamond,43

The effect of the growth rate on the concentration of nitrogen andtransition metal impurities in HPHT synthetic diamonds, 204

Paramagnetic centres and microstructure of reactively sputteredamorphous carbon nitride thin films, 1143

Ž .Micro-structural analysis of carbon nitride CN film preparedx

by ion beam assisted magnetron sputtering, 1205Substrate bias effect on amorphous nitrogenated carbon films

deposited by filtered arc deposition, 1227

Optical, anti-reflective and protective properties of diamond anddiamond-like carbon films, 1329

Nitrogen aggregationThe kinetics of the capture of nitrogen by nickel defects in

diamond, 312

Nitrogen incorporation conditionsCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

Nitrogen-dopedGrowth of homoepitaxial diamond doped with nitrogen for electron

emitter, 257

Non-aqueous electrolytesFactors controlling the electrochemical potential window for

diamond electrodes in non-aqueous electrolytes, 67

NucleationAtomistic simulation of the bombardment process during the BEN

Ž .phase of chemical vapor deposition CVD of diamond, 513Microwave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519Influence of nucleation on hydrogen incorporation in CVD

diamond films, 527Nanometer rough, sub-micrometer-thick and continuous diamond

chemical vapor deposition film promoted by a synergeticultrasonic effect, 545

Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550

Reactivity of different tBN environments serving as reaction sitesin cBN film deposition, 1416

CVD diamond nucleation enhanced by ultrasonic pretreatmentusing diamond and mixture of diamond and TaC powders, 1683

Ohmic contactApplication of two- and four-point contact probes to various

monocrystalline diamond surfaces, 332Electrical properties of graphite�homoepitaxial diamond contact,

451Ohmic contacts on diamond by B ion implantation and Ta�Au

metallization, 1709

One-dimensional carbon structured materialsThe effect of catalysis on the formation of one-dimensional carbon

structured materials, 1019

Optical bandgapDeposition and properties of amorphous carbon phosphide films,

1041

Optical emission spectrometryIn situ plasma diagnostics of the chemistry behind sulfur doping

of CVD diamond films, 301Diagnosis of dielectric barrier discharge CH plasmas for4

diamond-like carbon film deposition, 1491

Optical emission spectroscopyIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

Ž .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172

Optical propertiesOptical characterization of diamond-like carbon films using

multi-sample modification of variable angle spectroscopicellipsometry, 105

Highest optical gap tetrahedral amorphous carbon, 1086

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Optical studyOptical investigation of Al Ga N epitaxial films grown onx 1�x

AlN buffer layers, 892

Optoelectronic propertiesEffects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446Optical, anti-reflective and protective properties of diamond and

diamond-like carbon films, 1329

Outer-sphere reactionFactors controlling the electrochemical potential window for

diamond electrodes in non-aqueous electrolytes, 67

OxidationEffect of heat treatment on the properties of nano-diamond under

oxygen and argon ambient, 249Electrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640Preparation and properties of amorphous carbon oxy-nitride films

made by the layer-by-layer method, 1210A spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

p-type conductivityBlack diamond: a new material for active electronic devices, 396

p-Type dopingInfluence of the environment on the surface conductivity of

chemical vapor deposition diamond, 856

Paramagnetic defectsAnnealing study of the formation of nickel-related paramagnetic

defects in diamond, 623

ParamagnetismParamagnetic centres and microstructure of reactively sputtered

amorphous carbon nitride thin films, 1143

PassivationDiffusion of hydrogen from a microwave plasma into diamond and

its interaction with dopants and defects, 316

PatternsFabrication of vertically aligned carbon nanotubes patterns by

chemical vapor deposition for field emitters, 1638

PeapodsSpectroscopic analysis of single-wall carbon nanotubes and carbon

nanotube peapods, 957

PECVDEffects of thermal annealing on amorphous carbon nitride films by

r.f. PECVD, 1633

PentachlorophenolSquare wave voltammetry on boron-doped diamond electrodes for

analytical determinations, 1670

pHOn the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Phase changeŽ .Growth and characterization of SiC micro-crystals on Si 100

substrate by the chemical vapor deposition method, 1703

Phase stabilisationPrecursor design in c-BN growth, 1300

PhononSurface vibrations on clean, deuterated, and hydrogenated single

Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365

Relation between stress in cubic boron nitride films and thein-plane TO phonon energy, 1532

Phosphorus dopingEtching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828Deposition and properties of amorphous carbon phosphide films,

1041

PhotoconductivityImaging deep UV light with diamond-based systems, 433Response time of photoconductivity of amorphous carbon nitride

films prepared by a nitrogen radical sputter method, 1215Imaging of charge collection properties of a CVD diamond detector

using X-ray-induced current microscopy, 1472

PhotodetectorUV photodetector from Schottky diode diamond film, 442

PhotodetectorsImaging deep UV light with diamond-based systems, 433

PhotoelectricalInfluence of material properties on the performance of diamond

photocathodes, 437

Photoelectron spectroscopyThermal diffusivity in diamond, SiC N and BC N , 708x y x y

Ž .The oxidation of 100 textured diamond, 861

PhotoluminescenceSpectroscopic study of HPHT synthetic diamonds, as grown at

1500�C, 22Raman, photoluminescence and morphological studies of Si- and

Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75

Characterisation of electron irradiated boron-doped diamond, 681Photoluminescence studies of type IIa and nitrogen doped CVD

diamond, 692Multi-band structure of amorphous carbon luminescence, 1115

Ž .Growth and characterization of SiC micro-crystals on Si 100substrate by the chemical vapor deposition method, 1703

Near-threshold creation of optical centres in electron irradiatedcubic boron nitride, 1774

Transmission electron microscope radiation damage of 4H and 6HSiC studied by photoluminescence spectroscopy, 1923

Photon stimulated ion desorptionSynchrotron radiation study of surface versus sub-surface

deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371

Photonelectron spectroscopyAnalysis of the role of fluorine content on the thermal stability

of a-C:H:F thin films, 1100

PhotoresponseRelaxation in undoped polycrystalline CVD diamond films under

red illumination, 635

Physical vapor depositionPulsed laser ablation of graphite in O atmosphere for preparation2

of diamond films and carbon nanotubes, 953Mechanical properties and performance of magnetron-sputtered

graded diamond-like carbon films with and without metaladditions, 1139

Microstructure of diamond-like carbon films prepared by cathodicarc deposition, 1436

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Physical vapour depositionThermal diffusivity in diamond, SiC N and BC N , 708x y x y

PiezoresistanceReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

PinholesThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Planar contact geometryOptimised contact-structures for metal�diamond�metal UV-

detectors, 458

Planar defectsAtomic-scale models of interactions between inversion domain

boundaries and intrinsic basal stacking faults in GaN, 905

PlasmaThe effect of nitrogen addition to Ar�CH plasmas on the growth,4

morphology and field emission of ultrananocrystalline diamond,43

New technology for high rate synthesis of PC-diamond coatings inair with photon plasmatron, 472

Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550

The cavity ring-down spectroscopy of C in a microwave plasma,2608

Large scale synthesis of carbon nanotubes by plasma rotating arcdischarge technique, 914

Low temperature plasma chemical vapour deposition of carbonnanotubes, 918

Growth mechanism of amorphous hydrogenated carbon, 969High pressure diamond and diamond-like carbon deposition using

a microwave CAP reactor, 1036Synthesis of B�C�N thin films by electron beam excited plasma

CVD, 1290

Plasma assisted pulsed laser depositionInfluences of substrate bias on the composition and structure of

carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584

Plasma beam assisted depositionPlasma enhanced deposition of silicon carbonitride thin films and

property characterization, 16

Plasma enhanced chemical vapor depositionE and H regimes of plasma enhanced chemical vapor deposition

of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92

Plasma-assisted chemical vapor depositionCharacterization of boron carbon nitride films with a low

dielectric constant, 985

Plasma-assisted depositionElectron cyclotron resonance plasma-assisted pulsed laser

deposition of boron carbon nitride films, 1623

PlatinumThreshold effect of admixtures of platinum on the electrochemical

activity of amorphous diamond-like carbon thin films, 1518

PolycrystallineMagnetoresistance of boron-doped chemical vapor deposition

polycrystalline diamond films, 49Surface acoustic waves on nanocrystalline diamond, 677

Polycrystalline diamond filmUV photodetector from Schottky diode diamond film, 442

Polycrystalline diamond filmsDetection of CH bonds from micro Raman spectroscopy onx

polycrystalline boron doped diamond electrodes, 662

Post-growthLow energy post-growth irradiation of amorphous hydrogenated

Ž .carbon a-C:H films, 1026

Potentiodynamic curvesEvaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Powder technologyA novel CW laser�powder method of carbon single-wall nanotubes

production, 927

Pre-treated substrateApplication of diamond coatings onto small dental tools, 731

Preferential orientationPreparation of AlN and LiNbO thin films on diamond substrates3

by sputtering method, 408

PressureDependence of the growth rate, quality, and morphology of

diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589

Pressure sensorReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

Pretreated substratesNanometer rough, sub-micrometer-thick and continuous diamond

chemical vapor deposition film promoted by a synergeticultrasonic effect, 545

CVD diamond nucleation enhanced by ultrasonic pretreatmentusing diamond and mixture of diamond and TaC powders, 1683

Ohmic contacts on diamond by B ion implantation and Ta�Aumetallization, 1709

The effect of nitriding on the diamond film characteristics onchromium substrates, 1760

ProcessingSilicon carbide Schottky and ohmic contact process dependence,

1258

Pt�TiO �SiO �Si2 xŽ .The formation of a 111 texture of the diamond film on

Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499

Pulsed glow discharge CVDPolycrystalline diamond synthesis by means of high power pulsed

plasma glow discharge CVD, 573

Pulsed laser ablationEffect of nanostructure and back contact material on the field

emission properties of carbon films, 819

Pulsed laser depositionCorrelation between surface oxygen content and microstructure of

carbon nitride films, 1153The effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Stresses in pulsed laser deposited cubic boron nitride films, 1276Electron cyclotron resonance plasma-assisted pulsed laser

deposition of boron carbon nitride films, 1623Carbon nitride films with low friction coefficient synthesized by

nitrogen-ion-beam-assisted pulsed laser deposition, 1629

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Pulsed MPACVD reactorStudies of pulse operation regime of microwave plasma CVD

reactor, 579

Pulsed PECVDPulsed PECVD deposition of diamond-like carbon films, 1047

Pulsed RF biasPulsed PECVD deposition of diamond-like carbon films, 1047

Radiation damageRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618

Radiation hardnessThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405

Radiation induced defectsEffects of light on the ‘primed’ state of CVD diamond nuclear

detectors, 446Implantation-doping of diamond with B�, C�, N� and O� ions

using low temperature annealing, 612Transmission electron microscope radiation damage of 4H and 6H

SiC studied by photoluminescence spectroscopy, 1923

Radiation-induced defectsNear-threshold creation of optical centres in electron irradiated

cubic boron nitride, 1774

RadicalReactivity of the hydrogen atoms on diamond surface with various

radical initiators in mild condition, 1360Abstraction of hydrogen atoms on diamond surface using benzoyl

peroxide as a radical initiator, 1374

Ž .Radio frequency r.f.Pulsed laser deposition of CN films: role of r.f. nitrogenx

plasma activation for the film structure formation, 1223

RamanŽ .Properties of carbon nitride CN films deposited by ax

high-density plasma ion plating method, 1172Stoichiometry and interface effects on the electronic and optical

properties of SiC nanoparticles, 1243

Raman and IR spectroscopyEffects of hydrogen incorporation on structural relaxation and

vibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Raman characterisationDiamond nucleation and adhesion on sintered nitride ceramics,

1731

Raman scatteringRaman, photoluminescence and morphological studies of Si- and

Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75

Effect of nanostructure and back contact material on the fieldemission properties of carbon films, 819

Raman spectraCarbon films obtained from a C fullerene ion beam, 96460

Raman spectroscopyTime-dependent in-situ Raman observation of atomic hydrogen

etching on diamond-like carbon films, 262Influence of material properties on the performance of diamond

photocathodes, 437Bias assisted growth on diamond single crystals: the defect

formation due to ion bombardment studied by ion channelling,

electron backscatter diffraction, and micro-Raman spectroscopy,487

Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523

Microstructure and stress in nano-crystalline diamond filmsdeposited by DC glow discharge CVD, 601

Study of carbon nanoemitters using CO �CH gas mixtures in2 4triode-type field emission arrays, 788

Field emission and Raman spectroscopy studies of atomic hydrogenetching on boron and nitrogen doped DLC films, 804

Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837

Spectroscopic analysis of single-wall carbon nanotubes and carbonnanotube peapods, 957

Effects of gas pressure and r.f. power on the growth andproperties of magnetron sputter deposited amorphous carbonthin films, 1005

Determination of bonding in diamond-like carbon by Ramanspectroscopy, 1053

Elastic constants and structural properties of nanometre-thickdiamond-like carbon films, 1062

The effects of Si incorporation on the electrochemical andnanomechanical properties of DLC thin films, 1074

Hydrogen concentrations and mass density obtained by X-ray andneutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

A process for continuous manufacturing of diamond in atmosphere,1479

Characterisation of smooth fine-grained diamond coatings ontitanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544

Characterization of boron doped CVD diamond films by Ramanspectroscopy and X-ray diffractometry, 1578

The effect of ammonia�dimethylamine ratio in deposition ofhydrogenated CN films by PE-HF-CVD, 1905x

Reactive ion etchingSmooth and high-rate reactive ion etching of diamond, 824Reactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

Reactive ion etching etchingEtching of p- and n-type doped monocrystalline diamond using an

ECR oxygen plasma source, 828

Reactor designThe CAP-reactor, a novel microwave CVD system for diamond

deposition, 467

RearrangementThe enhancement of interconnected sp3 sites by chemical effects

during ta-C film growth, 1721

Recrystallization of graphiteThermal decomposition of glucose and diamond formation under

diamond-stable high pressure�high temperature conditions, 118

Reduction of residual stressStructure and properties of Si incorporated tetrahedral amorphous

carbon films prepared by hybrid filtered vacuum arc process, 198

RelaxationRelaxation in undoped polycrystalline CVD diamond films under

red illumination, 635

REMPI measurementsInvestigations of the gas phase chemistry in a hot filament CVD

reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567

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Residual stressMechanical analysis for crack-free release of chemical-vapor-

deposited diamond wafers, 1597Delamination and spalling of diamond-like-carbon tribological

surfaces, 1797

RF performanceRF performance of surface channel diamond FETs with sub-micron

gate length, 382

Rf radical beamDeposition of amorphous CN by d.c. and rf plasma sputteringx

using a rf radical nitrogen beam source, 1178

RIEReactive ion etching of CVD-diamond for piezoresistive pressure

sensors, 841

Ru-dopedRu-doped nanostructured carbon films, 1890

Rutherford backscatteringŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,

RBS and TOF-SIMS, 1385

Scanning electron microscopyInfluence of material properties on the performance of diamond

photocathodes, 437Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153Diamond nucleation and adhesion on sintered nitride ceramics,

1731

Scanning probe microscopyEffects of substrate bias on nanotribologyof a-C:H films deposited

by ECR-MPCVD, 1653

Scanning tunneling microscopyInfluence of annealing on the electronic properties of chemical

vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212

Ž .Scanning tunnelling microscopy STMCalculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961

Schottky diodeUV photodetector from Schottky diode diamond film, 442Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

Silicon carbide Schottky and ohmic contact process dependence,1258

Influence of annealing on reverse current of 4H�SiC Schottkydiodes, 1263

Heteroepitaxial growth of erbium carbide on boron dopedŽ .homoepitaxial diamond 100 films, 1332

Schottky junctionsSchottky junction properties of the high conductivity layer of

diamond, 355

Screen-printingField emission display with carbon nanotubes cathode: prepared by

a screen-printing process, 1845

SEMStudy of carbon nanoemitters using CO �CH gas mixtures in2 4

triode-type field emission arrays, 788

SemiconductorsHydrogen in n-type diamond, 1566

Sensitivity mapImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418

SensorsMicrowave plasma CVD diamond layers on three-dimensional

structured Si for protective coating, 519On the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Shape transition mapCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

Si doped DLCEvaluation of corrosion performance of ultra-thin Si-DLC

overcoats with electrochemical impedance spectroscopy, 1124

Si incorporationStructure and properties of Si incorporated tetrahedral amorphous

carbon films prepared by hybrid filtered vacuum arc process, 198

Ž .Si-doped diamond-like carbon DLCThe effects of Si incorporation on the electrochemical and

nanomechanical properties of DLC thin films, 1074

Si�N dopingRaman, photoluminescence and morphological studies of Si- and

Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75

SiCNitrogen and phosphorus implanted MESFETs in semi-insulating

4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,

1254Influence of annealing on reverse current of 4H�SiC Schottky

diodes, 1263Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,

1344

SiliconAtomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935Space-charge-limited current in hydrogenated amorphous carbon

films containing silicon and oxygen, 1753

Silicon carbideExcimer laser ablation of silicon carbide ceramic targets, 273Inert gas diffusion in DLC�Si films, 1091In situ kinetic analysis of SiC filaments CVD, 1234Investigation of ion implantation-induced damage in the carbon

and silicon sublattices of 6H-SiC, 1239Characterisation of silicon carbide and silicon nitride thin films

and Si N �SiC multilayers, 12483 4Transmission electron microscope radiation damage of 4H and 6H

SiC studied by photoluminescence spectroscopy, 1923

Ž .Silicon carbide SiCSilicon carbide Schottky and ohmic contact process dependence,

1258

Silicon carbonitridePlasma enhanced deposition of silicon carbonitride thin films and

property characterization, 16XPS studies on silicon carbonitride films prepared by sequential

implantation of nitrogen and carbon into silicon, 1676

Silicon nitrideCharacterisation of silicon carbide and silicon nitride thin films

and Si N �SiC multilayers, 12483 4

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Silicon-carbon nitrideTribological behaviour and chemical characterisation of Si-free

and Si-containing carbon nitride coatings, 169

Silicon-on-diamondThe radiation hardness properties of �-ray for SOD circuits

fabricated on 4-inch SOD wafer, 405Direct fusion bonding of silicon to polycrystalline diamond, 482

Single-hole transistorFabrication of diamond single-hole transistors using AFM

anodization process, 387

Sintered nitride substratesDiamond nucleation and adhesion on sintered nitride ceramics,

1731

SmoothComposite diamond films with smooth surface and the structural

influence on dielectric properties, 228

SOIFrom �-MOSFET with silicon on oxide to �-MOSFET with

silicon carbide on nitride, 1268

Solid lubricantFriction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135

Sonic flowFabrication of diamond flow controller micronozzles, 237

sp2 BondingCalculation of the charge spreading along a carbon nanotube seen

Ž .in scanning tunnelling microscopy STM , 961Spin density in hydrogenated amorphous carbon films�different

originations, 1848

sp2�sp3 bondingDefect induced lowering of work function in graphite-like

materials, 813

sp3 BondTribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130

sp3 BondingIs stress necessary to stabilise sp3 bonding in diamond-like

carbon?, 994Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010Spin density in hydrogenated amorphous carbon films�different

originations, 1848

sp3-BondingCubic boron nitride growth from NH and BBr precursors: a3 3

theoretical study, 1286

SpallingDelamination and spalling of diamond-like-carbon tribological

surfaces, 1797

Spatial distribution of atomic hydrogenMonte Carlo simulation of spatial distribution of atomic hydrogen

in electron assisted CVD, 1648

SpectroscopyInfluence of annealing on the electronic properties of chemical

vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212

The cavity ring-down spectroscopy of C in a microwave plasma,2608

Low temperature plasma chemical vapour deposition of carbonnanotubes, 918

Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953

Plasma chemistry during deposition of a-C:H, 989IR study of the formation process of polymeric hydrogenated

amorphous carbon film, 1110Pulsed laser deposition of CN films: role of r.f. nitrogenx

plasma activation for the film structure formation, 1223A spectroscopic study of the negative electron affinity of cesium

Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379

Synthesis of nanocrystalline nitrogen-rich carbon nitride powdersat high pressure, 1885

Spiral growthEpitaxial interface of nanocrystalline TiC formed between

Cu-10Sn-15Ti alloy and diamond, 1366

Sputter depositionDLC composite thin films by sputter deposition, 1119

Sputter erosion rateModulated CN films prepared by IBAD, 1552x

SputteringCarbon based coatings for high temperature cutting tool

applications, 176Reactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413Properties of W�a-C nanometric multilayers produced by RF-

pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and

properties of magnetron sputter deposited amorphous carbonthin films, 1005

Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010

Effects of hydrogen incorporation on structural relaxation andvibrational properties of a-CN:H thin films grown by reactivesputtering, 1166

Synthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272

Square wave voltammetrySquare wave voltammetry on boron-doped diamond electrodes for

analytical determinations, 1670

SQUIDArc-melting synthesis of BN nanocapsules from B�Al, TiB and2

VB , 9492

Stacking faultsPlanar defects and dislocations in HPHT as-grown diamond

crystals, 268

SteelCVD diamond deposition on steel using arc-plated chromium

nitride interlayers, 536

Stone cuttingDiamond tools in stone and civil engineering industry: cutting

principles, wear and applications, 736

Stone processingDiamond tools in stone and civil engineering industry: cutting

principles, wear and applications, 736

StrainŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901

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StressThe dislocations of low-angle grain boundaries in GaN epilayers: a

HRTEM quantitative study and finite element stress statecalculation, 910

Structural characterization of hard a-C:H films as a function ofthe methane pressure, 980

Is stress necessary to stabilise sp3 bonding in diamond-likecarbon?, 994

Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010

Characterisation of silicon carbide and silicon nitride thin filmsand Si N �SiC multilayers, 12483 4

Synthesis and characterization of cubic boron nitride films �

investigations of growth and annealing processes, 1272Relation between stress in cubic boron nitride films and the

in-plane TO phonon energy, 1532Electrochemical behaviour of graphite- and molybdenum

electrodes modified with thin-film diamond, 1690

Stress relaxationMicrostructure and stress in nano-crystalline diamond films

deposited by DC glow discharge CVD, 601

Structural evolutionElastic modulus and structural evolution of diamond-like carbon

films deposited by RF-PACVD, 1441

StructureHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Determination of bonding in diamond-like carbon by Raman

spectroscopy, 1053Inert gas diffusion in DLC�Si films, 1091Novel BN tassel-like and tree-like nanostructures, 1397Study of the structure of hard graphite-like amorphous carbon

films by electron diffraction, 1467Dependence of the composition and bonding structure of carbon

nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511

Fluorinated a-C:H films investigated by thermal-induced gaseffusion, 1831

Structure perfectionStructure of diamond single crystals of different origins studies

by Kossel’s method, 882

Sub-micronPreparation and properties of sub-micron thick and free-standing

diamond membranes, 721

Substrate bias voltageStructural, mechanical and tribological properties of diamond-like

carbon films prepared under different substrate bias voltage,1837

Substrate treatmentOn effectiveness of various surface treatments on adhesion of

HF-CVD diamond coating to tungsten carbide inserts, 1660

Sulfochromic treatmentOptimised contact-structures for metal�diamond�metal UV-

detectors, 458

Sulfur dopingIn situ characterisation of CVD diamond growth under H S2

addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296

In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301

Sulfur effectsElectron field emission properties of microcrystalline and

nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799

Sulfur-dopingA new acceptor state in CVD-diamond, 347

SulphurIon implantation of sulphur, boron and nitrogen in diamond: a

charge-based deep level transient spectroscopic investigation,342

SurfaceTheoretical modeling of sulfur�hydrogen complexes in diamond,

323Surface conductivity of nitrogen-doped diamond, 359Surface vibrations on clean, deuterated, and hydrogenated single

Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365

Very adherent CVD diamond film on modified molybdenum sur-face, 532

Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851

Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856

Ž .The oxidation of 100 textured diamond, 861Stimulated desorption of D� from diamond: surface versus

sub-surface processes via resonance dissociative electron attach-ment, 867

Reactivity of the hydrogen atoms on diamond surface with variousradical initiators in mild condition, 1360

Abstraction of hydrogen atoms on diamond surface using benzoylperoxide as a radical initiator, 1374

The absorption investigation in CVD-diamond plates and windowsat 50�200 GHz, 1485

Surface acoustic waveReactive DC magnetron sputtering of aluminum nitride films for

surface acoustic wave devices, 413

Surface acoustic wave devicePreparation of AlN and LiNbO thin films on diamond substrates3

by sputtering method, 408

Surface conductivityLow temperature properties of the p-type surface conductivity of

diamond, 351Schottky junction properties of the high conductivity layer of

diamond, 355

Surface energyWettability and surface energy of oxidized and hydrogen

plasma-treated diamond films, 845

Surface enhanced Raman spectroscopyDetection of nanophase at the surface of HFCVD grown diamond

films using surface enhanced Raman spectroscopic technique,1858

Surface morphologyPlasma enhanced deposition of silicon carbonitride thin films and

property characterization, 16

Surface potential barrierElectron emission from hydrogenated and oxidized heteroepitaxial

diamond doped with boron, 780

Surface roughnessPreparation of AlN and LiNbO thin films on diamond substrates3

by sputtering method, 408

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Surface terminationOn the ion-sensitivity of H-terminated surface channel devices on

diamond, 651

Surface treatmentsDiamond deposition on hardmetal substrates after pre-treatment

with boron or sulfur compounds, 555

Surface-channelRF performance of surface channel diamond FETs with sub-micron

gate length, 382

Surfaces� 4Simulation of step patterns on natural diamond 111 surfaces, 145

SynchrotronImaging of the sensitivity in detector grade polycrystalline

diamonds using micro-focused X-ray beams, 418

Synchrotron radiationSynchrotron radiation X-ray analysis of boron-doped diamond

films grown by hot-filament assisted chemical vapor deposition,153

SynthesisSynthesis of nanocrystalline nitrogen-rich carbon nitride powders

at high pressure, 1885

Synthetic diamondModelling transition metals in diamond, 631

Synthetic diamond crystalPlanar defects and dislocations in HPHT as-grown diamond

crystals, 268

Ta filamentsInteractions of Ta-filaments during hot-filament CVD of BCN-

layers, 191

ta-CElectrochemical tests on the carbon protective layer of a hard

disk, 1409The enhancement of interconnected sp3 sites by chemical effects

during ta-C film growth, 1721

TEMField emission, structure, cathodoluminescence and formation

studies of carbon and Si�C�N nanotubes, 793

Temperature gradientŽ .Enhancement of 100 texture in diamond films grown using a

temperature gradient, 1403

TemperaturesSize and temperature dependence of nanodiamond�nanographite

transition related with surface stress, 234

Ternary BCNX-Ray absorption study of the bonding structure of BCNcompounds

enriched in carbon by CH ion assistance, 12954

Tetrahedral amorphous carbonStructure of nitrogenated amorphous carbon films from NEXAFS,

8Structure and properties of Si incorporated tetrahedral amorphous

carbon films prepared by hybrid filtered vacuum arc process, 198Is stress necessary to stabilise sp3 bonding in diamond-like

carbon?, 994Influence of the energy of sputtered carbon atoms on the

constitution of diamond-like carbon thin films, 1010

Textured diamond films

Ž .Enhancement of 100 texture in diamond films grown using atemperature gradient, 1403

Textured film² :Large area deposition of 100 -textured diamond films by a

60-kW microwave plasma CVD reactor, 596

TheoryPrecursor design in c-BN growth, 1300

Thermal annealingTime-dependent in-situ Raman observation of atomic hydrogen

etching on diamond-like carbon films, 262Effects of thermal annealing on amorphous carbon nitride films by

r.f. PECVD, 1633

Thermal conductivityThe large area deposition of diamond by the multi-cathode direct

Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463

Thermal conductivity enhancement in cutting tools by chemicalvapor deposition diamond coating, 703

Thermal diffusivity in diamond, SiC N and BC N , 708x y x y

Thermal shockDiamond windows and domes: flexural strength and thermal shock,

218

Thermal-oxidationŽ .The oxidation of 100 textured diamond, 861

Thermochemical bevelingThermochemical beveling of CVD diamond films intended for

precision cutting and measurement applications, 1537

Thickness of the filmEffect of film thickness on the stress and adhesion of

diamond-like carbon coatings, 1643

Thin filmCarbon films obtained from a C fullerene ion beam, 96460DLC composite thin films by sputter deposition, 1119XPS studies on silicon carbonitride films prepared by sequential

implantation of nitrogen and carbon into silicon, 1676

Thin filmsCharacterisation of cold electron emitting carbonaceous films

containing Ni metallic nanocrystals, 809A new method for evaluating the scratch resistance of diamond-like

carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on

Ti alloy substrate by nano-scratch technique, 1505Threshold effect of admixtures of platinum on the electrochemical

activity of amorphous diamond-like carbon thin films, 1518

TiCEpitaxial interface of nanocrystalline TiC formed between

Cu-10Sn-15Ti alloy and diamond, 1366

Time-of-flight secondary ion mass spectrometryŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,

RBS and TOF-SIMS, 1385

TiNHigh-pressure sintering of cBN-TiN-Al composite for cutting tool

application, 280

Titanium carbideChemical vapor deposition diamond thin films growth on Ti6AL4V

using the Surfatron system, 550

Ž .Titanium carbide TiCMechanical properties and performance of magnetron-sputtered

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Subject Index for Volume 111996

graded diamond-like carbon films with and without metaladditions, 1139

Tool coatingsMicrowave plasma chemical vapour deposition diamond nucleation

on ferrous substrates with Ti and Cr interlayers, 1617

Tool designDiamond tools for wire sawing metal components, 742

Transition metalsThe effect of the growth rate on the concentration of nitrogen and

transition metal impurities in HPHT synthetic diamonds, 204

Transmission electron diffractionCharacterization of boron carbon nitride films with a low

dielectric constant, 985

Transmission electron microscopyGrain boundaries in boron-doped CVD diamond films, 697Synthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2Ž .Initial stages of GaN buffer layer growth on 0001 sapphire by

metalorganic chemical vapour deposition, 901Atomic and electronic structures of Si-included C cluster74

studied by HREM and molecular orbital calculations, 935Characterization of boron carbon nitride films with a low

dielectric constant, 985Reactivity of different tBN environments serving as reaction sites

in cBN film deposition, 1416Characterisation of smooth fine-grained diamond coatings on

titanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544

Ž .Transmission electron microscopy TEMHigh-resolution electron microscopy and electronic structures of

endohedral La@B N clusters, 94036 36Morphology and characterization of highly nitrogenated, aligned,

amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193

Transmission electron spectroscopyGrowth mechanism of Y-junction carbon nanotubes, 1349

TribiologyFriction coefficient measurements By LFM on DLC films as

function of sputtering deposition parameters, 1135

Tribological propertyTribological properties of diamond-like carbon films prepared by

mass-separated ion beam deposition, 1130

TribologyMechanical and tribological properties of CN films deposited byx

reactive pulsed laser ablation, 98Tribological behaviour and chemical characterisation of Si-free

and Si-containing carbon nitride coatings, 169DLC-based wear protection on magnetic storage media, 1781

Triple junctionField emission property of chemical vapor deposited diamond

overlayer films, 185

Tungsten carbideQuantitative comparison of adhesive toughness for various diamond

films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the

cutting properties of diamond coated Co-cemented tungstencarbide tools, 726

Application of diamond coatings onto small dental tools, 731

Turbostratic boron nitride

Reactivity of different tBN environments serving as reaction sitesin cBN film deposition, 1416

TwinsPlanar defects and dislocations in HPHT as-grown diamond

crystals, 268

Ultrananocrystalline diamondThe effect of nitrogen addition to Ar�CH plasmas on the growth,4

morphology and field emission of ultrananocrystalline diamond,43

UndopedField emission of polycrystalline diamond films grown by

microwave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897

UniformityImaging of charge collection properties of a CVD diamond detector

using X-ray-induced current microscopy, 1472

UV imagingImaging deep UV light with diamond-based systems, 433

UV Raman spectroscopySynthesis and tribological characteristics of nanocrystalline

diamond film using CH �H microwave plasmas, 8774 2

UV rangeUltraviolet photoluminescence and its relation to atomic bonding

properties of hydrogenated amorphous carbon, 53Photoconductivity of highly oriented and randomly oriented

diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors

for the ESA Solar Orbiter, 427Multi-band structure of amorphous carbon luminescence, 1115

UV range illuminationOptical strength in UV region of amorphous carbon, 1106

UV-photodetectorsOptimised contact-structures for metal�diamond�metal UV-

detectors, 458

VacanciesStoichiometry and interface effects on the electronic and optical

properties of SiC nanoparticles, 1243

Vacancy complexesCharacterisation of electron irradiated boron-doped diamond, 681

Vacancy-interstitial recombinationRecombination-enhanced diffusion of self-interstitial atoms and

vacancy�interstitial recombination in diamond, 618

VUV ellipsometrySpectroscopic ellipsometry studies on BN films from IR to vacuum

UV energy region, 1281

Water treatmentElectrochemical advanced oxidation process for water treatment

using DiaChem� electrodes, 640

WC�C nanocomposite filmsMicrostructure and mechanical properties of WC�C nano-

composite films, 1747

WearDiamond cantilever with integrated tip for nanomachining, 667DLC-based wear protection on magnetic storage media, 1781Structural, mechanical and tribological properties of diamond-like

carbon films prepared under different substrate bias voltage,1837

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Subject Index for Volume 11 1997

Wear particle generationCoating hardness effect on the critical number of friction cycles

for wear particle generation in carbon nitride coatings, 1817

Weibull analysisDiamond windows and domes: flexural strength and thermal shock,

218

WettabilityWettability and surface energy of oxidized and hydrogen

plasma-treated diamond films, 845

Wire sawingDiamond tools for wire sawing metal components, 742

X-rayDiamond membrane based structures for miniature X-ray sources,

1

X-Ray absorption near edge spectroscopyX-Ray absorption study of the bonding structure of BCN

compounds enriched in carbon by CH ion assistance, 12954

X-Ray absorption spectroscopyOn the bonding structure of hydrogenated carbon nitrides grown

by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161

X-ray diffractionSynchrotron radiation X-ray analysis of boron-doped diamond

films grown by hot-filament assisted chemical vapor deposition,153

Deposition of an InN thin film by a r.f. plasma-assisted reactiveŽ .ion-beam sputtering deposition R-IBSD technique, 896

Properties of W�a-C nanometric multilayers produced byRF-pulsed magnetron sputtering, 1000

Characterisation of smooth fine-grained diamond coatings ontitanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544

Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858

Ž .X-Ray diffraction XRDMicrostructure and stress in nano-crystalline diamond films

deposited by DC glow discharge CVD, 601

X-ray diffractometryCharacterization of boron doped CVD diamond films by Raman

spectroscopy and X-ray diffractometry, 1578

X-Ray photoelectron spectroscopyCharacterization of boron carbon nitride films with a low

dielectric constant, 985XPS characterization of the composition and bonding states of

elements in CN layers prepared by ion beam assisted deposition,x

1149Correlation between surface oxygen content and microstructure of

carbon nitride films, 1153

Ž .X-Ray photoelectron spectroscopy XPSVariation of nitrogen incorporation and bonding configuration of

carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183

X-Ray reflectivityElastic constants and structural properties of nanometre-thick

diamond-like carbon films, 1062Hydrogen concentrations and mass density obtained by X-ray and

neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188

X-ray-induced photocurrentImaging of charge collection properties of a CVD diamond detector

using X-ray-induced current microscopy, 1472

XPSThe effect of process parameters on the chemical structure of

pulsed laser deposited carbon nitride films, 1157Effect of plasma parameters on the structure of CN layersx

deposited by DC magnetron sputtering, 1200XPS studies on silicon carbonitride films prepared by sequential

implantation of nitrogen and carbon into silicon, 1676

Y-branched nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon

nanotubes, 1081

Y-junctionGrowth mechanism of Y-junction carbon nanotubes, 1349


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