Ž .Diamond and Related Materials 11 2002 1969�1997
Subject Index for Volume 11
3-Point bendThe fracture stress of chemical vapour deposited diamond, 1913
3H centrePhotoluminescence studies of type IIa and nitrogen doped CVD
diamond, 692
60 kW CVD² :Large area deposition of 100 -textured diamond films by a
60-kW microwave plasma CVD reactor, 596
6H�SiCŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001
substrates by positively biased pretreatment, 509
a-CAb initio generation of amorphous carbon structures, 1015Soft X-ray photoelectron microscopy used for the characterization
of diamond, a-C and CN , thin films, 1068x
a-C:H filmsEffects of substrate bias on nanotribologyof a-C:H films deposited
by ECR-MPCVD, 1653
a-C:N nano-rodsMorphology and characterization of highly nitrogenated, aligned,
amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193
A-defectDetonation synthesis ultradispersed diamond structural properties
investigation by infrared absorption, 872
AbradingAbrasive stripping voltammetry of silver and tin at boron-doped
diamond electrodes, 646
AbsorptionSpectroscopic study of HPHT synthetic diamonds, as grown at
1500�C, 22Optical characterization of natural Argyle diamonds, 125The absorption investigation in CVD-diamond plates and windows
at 50�200 GHz, 1485
AcetylenePlasma chemistry during deposition of a-C:H, 989
AdhesionEffect of WC grain growth inhibitors on the adhesion of chemical
vapor deposition diamond films on WC�Co cemented carbide,242
High temperature diffusion chromizing as a successful method forCVD-diamond coating of steel, 757
Investigating the fracture resistance and adhesion of DLC filmswith micro-impact testing, 1606
Microwave plasma chemical vapour deposition diamond nucleationon ferrous substrates with Ti and Cr interlayers, 1617
Effect of film thickness on the stress and adhesion ofdiamond-like carbon coatings, 1643
DLC-based wear protection on magnetic storage media, 1781
Adhesion strengthQuantitative comparison of adhesive toughness for various diamond
films on co-cemented tungsten carbide, 716
AdsorbatesRole of adsorbates in field emission from nanotubes, 769
AdsorptionElectron emission from hydrogenated and oxidized heteroepitaxial
diamond doped with boron, 780
AlNReactive DC magnetron sputtering of aluminum nitride films for
surface acoustic wave devices, 413
AmorphousPreparation and properties of amorphous carbon oxy-nitride films
made by the layer-by-layer method, 1210Response time of photoconductivity of amorphous carbon nitride
films prepared by a nitrogen radical sputter method, 1215High resistivity and low dielectric constant amorphous carbon
nitride films: application to low-k materials for ULSI, 1219
Amorphous carbonCharacteristics of hydrogenated amorphous carbon films deposited
by large-area microwave-sustained surface wave plasma, 976Properties of W�a-C nanometric multilayers produced by
RF-pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and
properties of magnetron sputter deposited amorphous carbonthin films, 1005
Optical strength in UV region of amorphous carbon, 1106Mechanical properties and performance of magnetron-sputtered
graded diamond-like carbon films with and without metaladditions, 1139
Ž .Micro-structural analysis of carbon nitride CN film preparedx
by ion beam assisted magnetron sputtering, 1205Field emission site density studies of amorphous carbon films,
1422Microstructure of diamond-like carbon films prepared by cathodic
arc deposition, 1436Nanoporosity in plasma deposited amorphous carbon films
investigated by small-angle X-ray scattering, 1946
Amorphous carbon coatingsTribological behaviour and chemical characterisation of Si-free
and Si-containing carbon nitride coatings, 169
Amorphous diamondAb initio generation of amorphous carbon structures, 1015
Elsevier Science B.V. All rights reserved.Ž .PII: S 0 9 2 5 - 9 6 3 5 0 2 0 0 2 5 0 - 9
Subject Index for Volume 111970
Amorphous filmStudy of the structure of hard graphite-like amorphous carbon
films by electron diffraction, 1467
Amorphous hydrogenated carbonUltraviolet photoluminescence and its relation to atomic bonding
properties of hydrogenated amorphous carbon, 53Growth mechanism of amorphous hydrogenated carbon, 969Low energy post-growth irradiation of amorphous hydrogenated
Ž .carbon a-C:H films, 1026IR study of the formation process of polymeric hydrogenated
amorphous carbon film, 1110Multi-band structure of amorphous carbon luminescence, 1115Space-charge-limited current in hydrogenated amorphous carbon
films containing silicon and oxygen, 1753Fluorinated a-C:H films investigated by thermal-induced gas
effusion, 1831Nanoporosity in plasma deposited amorphous carbon films
investigated by small-angle X-ray scattering, 1946
Amorphous materialsOptical characterization of diamond-like carbon films using
multi-sample modification of variable angle spectroscopicellipsometry, 105
Amorphous semiconductorsAb initio generation of amorphous carbon structures, 1015
Amorphous-carbonSubstrate bias effect on amorphous nitrogenated carbon films
deposited by filtered arc deposition, 1227
Amorphous-hydrogenated carbonSpin density in hydrogenated amorphous carbon films�different
originations, 1848
Anisotropic etchingSmooth and high-rate reactive ion etching of diamond, 824
AnnealingNitrogen and phosphorus implanted MESFETs in semi-insulating
4H-SiC, 392Annealing study of the formation of nickel-related paramagnetic
defects in diamond, 623Influence of annealing on reverse current of 4H�SiC Schottky
diodes, 1263Synthesis and characterization of cubic boron nitride films �
investigations of growth and annealing processes, 1272Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,
1344
ApplicationOptical, anti-reflective and protective properties of diamond and
diamond-like carbon films, 1329
ApplicationsElectrical properties of graphite�homoepitaxial diamond contact,
451Abrasive stripping voltammetry of silver and tin at boron-doped
diamond electrodes, 646Diamond cantilever with integrated tip for nanomachining, 667Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851
GaN-based heterostructures for sensor applications, 886
Arc dischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc
discharge technique, 914
Atmospheric pressureNew technology for high rate synthesis of PC-diamond coatings in
air with photon plasmatron, 472
Atomic force microscopyDiamond cantilever with integrated tip for nanomachining, 667Nanolithographic modification of diamond, 1788
Ž .Atomic force microscopy AFMA new method for evaluating the scratch resistance of diamond-like
carbon films by the nano-scratch technique, 1454
Atomic oxygenA spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
Ž .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,RBS and TOF-SIMS, 1385
Atomic structureAb initio generation of amorphous carbon structures, 1015
B�C�NSynthesis of B�C�N thin films by electron beam excited plasma
CVD, 1290
B-dopingDiffusion of hydrogen from a microwave plasma into diamond and
its interaction with dopants and defects, 316
Backscattering spectrometryInvestigation of ion implantation-induced damage in the carbon
and silicon sublattices of 6H-SiC, 1239
Band structureDetonation synthesis ultradispersed diamond structural properties
investigation by infrared absorption, 872Multi-band structure of amorphous carbon luminescence, 1115
BCNInteractions of Ta-filaments during hot-filament CVD of
BCN-layers, 191
Beveling angleThermochemical beveling of CVD diamond films intended for
precision cutting and measurement applications, 1537
BiasŽ . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001
substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma
chemical vapor deposition, 523Substrate bias effect on amorphous nitrogenated carbon films
deposited by filtered arc deposition, 1227Influences of substrate bias on the composition and structure of
carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584
Bias assisted growthBias assisted growth on diamond single crystals: the defect
formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487
Bias enhanced nucleationAnalysis of the total carbon deposition during the bias enhanced
Ž . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3493
Bias methodA new method of formation of impurity-doped diamond films by
bias method, 1804
Subject Index for Volume 11 1971
Bidimensional electron gasGaN-based heterostructures for sensor applications, 886
Black diamondBlack diamond: a new material for active electronic devices, 396
BondingOptical brazing technique for bonding diamond films to zinc
sulfide, 753Determination of bonding in diamond-like carbon by Raman
spectroscopy, 1053
Bonding structureOn the bonding structure of hydrogenated carbon nitrides grown
by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161
Deposition of amorphous CN by d.c. and rf plasma sputteringxusing a rf radical nitrogen beam source, 1178
BoronInvestigation on boron-doped CVD samples, 338
Boron carbon nitrideCharacterization of boron carbon nitride films with a low
dielectric constant, 985Electron cyclotron resonance plasma-assisted pulsed laser
deposition of boron carbon nitride films, 1623
Boron dopedA new method of formation of impurity-doped diamond films by
bias method, 1804
Boron dopingDetection of CH bonds from micro Raman spectroscopy onx
polycrystalline boron doped diamond electrodes, 662Characterisation of electron irradiated boron-doped diamond, 681Etching of p- and n-type doped monocrystalline diamond using an
ECR oxygen plasma source, 828Kinetics study of diamond electrodes at different levels of boron
doping as quasi-reversible systems, 1523
Boron nitrideHigh-resolution electron microscopy and electronic structures of
endohedral La@B N clusters, 94036 36Spectroscopic ellipsometry studies on BN films from IR to vacuum
UV energy region, 1281Precursor design in c-BN growth, 1300Novel BN tassel-like and tree-like nanostructures, 1397Direct growth of c-BN on a mono-structured transition layer by
plasma-enhanced chemical vapor deposition, 1854
Boron-dopedMagnetoresistance of boron-doped chemical vapor deposition
polycrystalline diamond films, 49
Boron-doped diamondSynchrotron radiation X-ray analysis of boron-doped diamond
films grown by hot-filament assisted chemical vapor deposition,153
Bowing parameterOptical investigation of Al Ga N epitaxial films grown onx 1�x
AlN buffer layers, 892
Brillouin scatteringElastic constants and structural properties of nanometre-thick
diamond-like carbon films, 1062
Buffer layerŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by
metalorganic chemical vapour deposition, 901
Bulk diamondFormation of diamond from CaCO in a reduced C�O�H fluid at3
HP�HT, 1496
C�VElectrical properties of MgO�p-diamond junction fabricated on
homoepitaxial single-crystalline diamond, 1952
c-BNDirect growth of c-BN on a mono-structured transition layer by
plasma-enhanced chemical vapor deposition, 1854
c-BN filmsIon beam assisted growth of c-BN films on top of c-BN substrates
� a HRTEM study, 38
c-BN substrateIon beam assisted growth of c-BN films on top of c-BN substrates
� a HRTEM study, 38
C N3 4XPS characterization of the composition and bonding states of
elements in CN layers prepared by ion beam assisted deposition,x1149
Effect of plasma parameters on the structure of CN layersxdeposited by DC magnetron sputtering, 1200
Pulsed laser deposition of CN films: role of r.f. nitrogenxplasma activation for the film structure formation, 1223
C fullerene60Carbon films obtained from a C fullerene ion beam, 96460
CapacitanceEIS capacitance diagnosis of nanoporosity effect on the corrosion
protection of DLC films, 160
CarbideTransmission electron microscopy studies of nanofibers formed on
Fe C -carbide, 9317 3From �-MOSFET with silicon on oxide to �-MOSFET with
silicon carbide on nitride, 1268Heteroepitaxial growth of erbium carbide on boron doped
Ž .homoepitaxial diamond 100 films, 1332
CarbidesX-Ray absorption study of the bonding structure of BCN
compounds enriched in carbon by CH ion assistance, 12954
CarbonVery adherent CVD diamond film on modified molybdenum sur-
face, 532Electrochemical activity of boron-doped diamond electrodes grown
on carbon fiber cloths, 657Field emission from carbon films deposited on stainless steel
substrate, 784Defect induced lowering of work function in graphite-like
materials, 813Low temperature plasma chemical vapour deposition of carbon
nanotubes, 918Growth mechanism and properties of the large area well-aligned
carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922
Atomic and electronic structures of Si-included C cluster74studied by HREM and molecular orbital calculations, 935
Characteristics of nickel-containing carbon films deposited usingelectron cyclotron resonance CVD, 1031
Preparation and properties of amorphous carbon oxy-nitride filmsmade by the layer-by-layer method, 1210
Response time of photoconductivity of amorphous carbon nitridefilms prepared by a nitrogen radical sputter method, 1215
Subject Index for Volume 111972
High resistivity and low dielectric constant amorphous carbonnitride films: application to low-k materials for ULSI, 1219
Effects of sp2�sp3 bonding ratios on field emission propertiesof diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429
Carbon nanofiberPulsed laser ablation of graphite in O atmosphere for preparation2
of diamond films and carbon nanotubes, 953
Carbon nanotubeIn situ diagnosis of chemical species for the growth of carbon
nanotubes in microwave plasma-enhanced chemical vapor de-position, 59
Carbon nanotube growthFrom straight carbon nanotubes to Y-branched and coiled carbon
nanotubes, 1081
Carbon nanotubesA novel CW laser�powder method of carbon single-wall nanotubes
production, 927Growth mechanism of Y-junction carbon nanotubes, 1349Fabrication of vertically aligned carbon nanotubes patterns by
chemical vapor deposition for field emitters, 1638Field emission display with carbon nanotubes cathode: prepared by
a screen-printing process, 1845
Carbon nitrideStructure of nitrogenated amorphous carbon films from NEXAFS,
8Mechanical and tribological properties of CN films deposited byx
reactive pulsed laser ablation, 98Tribological behaviour and chemical characterisation of Si-free
and Si-containing carbon nitride coatings, 169Paramagnetic centres and microstructure of reactively sputtered
amorphous carbon nitride thin films, 1143Ž .Properties of carbon nitride CN films deposited by ax
high-density plasma ion plating method, 1172Deposition of amorphous CN by d.c. and rf plasma sputteringx
using a rf radical nitrogen beam source, 1178Hydrogen concentrations and mass density obtained by X-ray and
neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188
Effects of thermal annealing on amorphous carbon nitride films byr.f. PECVD, 1633
Synthesis of nanocrystalline nitrogen-rich carbon nitride powdersat high pressure, 1885
Carbon nitride filmCarbon nitride films with low friction coefficient synthesized by
nitrogen-ion-beam-assisted pulsed laser deposition, 1629
Carbon nitride filmsDependence of the composition and bonding structure of carbon
nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511
Carbon nitridesThe effect of ammonia�dimethylamine ratio in deposition of
hydrogenated CN films by PE-HF-CVD, 1905x
Carbon overlayersElectrochemical tests on the carbon protective layer of a hard
disk, 1409
Carbon phosphideDeposition and properties of amorphous carbon phosphide films,
1041
Ž .Carbon vapor deposition CVDAtomistic simulation of the bombardment process during the BEN
Ž .phase of chemical vapor deposition CVD of diamond, 513
Carbon-nitrideModulated CN films prepared by IBAD, 1552x
Carrier mobilityMagnetoresistance of boron-doped chemical vapor deposition
polycrystalline diamond films, 49
CatalystsThe enhancement of interconnected sp3 sites by chemical effects
during ta-C film growth, 1721
Catalytic graphitizationA novel CW laser�powder method of carbon single-wall nanotubes
production, 927
Catalytic processesGrowth mechanism and properties of the large area well-aligned
carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922
The effect of catalysis on the formation of one-dimensional carbonstructured materials, 1019
Formation of diamond from CaCO in a reduced C�O�H fluid at3HP�HT, 1496
CathodoluminescenceHPHT synthesis of diamond with high nitrogen content from an
Fe N�C system, 18633
Cemented carbideOn effectiveness of various surface treatments on adhesion of
HF-CVD diamond coating to tungsten carbide inserts, 1660
Characterisation IR� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,
328
CharacterizationGrain boundaries in boron-doped CVD diamond films, 697Deposition of an InN thin film by a r.f. plasma-assisted reactive
Ž .ion-beam sputtering deposition R-IBSD technique, 896Atomic-scale models of interactions between inversion domain
boundaries and intrinsic basal stacking faults in GaN, 905
Chemical bondingMicrostructure of diamond-like carbon films prepared by cathodic
arc deposition, 1436
Chemical vapor depositionIn situ diagnosis of chemical species for the growth of carbon
nanotubes in microwave plasma-enhanced chemical vapor de-position, 59
Ž .Fabrication of heteroepitaxial diamond thin films on Ir 001 �Ž .MgO 001 substrates using antenna-edge-type microwave
plasma-assisted chemical vapor deposition, 478The cavity ring-down spectroscopy of C in a microwave plasma,2
608Surface acoustic waves on nanocrystalline diamond, 677Thermal conductivity enhancement in cutting tools by chemical
vapor deposition diamond coating, 703Quantitative comparison of adhesive toughness for various diamond
films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the
cutting properties of diamond coated Co-cemented tungstencarbide tools, 726
Field emission, structure, cathodoluminescence and formationstudies of carbon and Si�C�N nanotubes, 793
Characteristics of hydrogenated amorphous carbon films deposited
Subject Index for Volume 11 1973
by large-area microwave-sustained surface wave plasma, 976Growth mechanism of Y-junction carbon nanotubes, 1349Diamond-like carbon films deposited by electron beam excited
plasma chemical vapor deposition, 1353Calculated energies of adsorption of non-hydrocarbon species on
Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initiocalculation, 1560
Fabrication of vertically aligned carbon nanotubes patterns bychemical vapor deposition for field emitters, 1638
Direct growth of c-BN on a mono-structured transition layer byplasma-enhanced chemical vapor deposition, 1854
Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897
The effect of ammonia�dimethylamine ratio in deposition ofhydrogenated CN films by PE-HF-CVD, 1905x
Ž .Chemical vapor deposition CVDEnhanced low-temperature thermionic field emission from
surface-treated N-doped diamond films, 774Growth mechanism and properties of the large area well-aligned
carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922
Effects of sp2�sp3 bonding ratios on field emission propertiesof diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429
Chemical vapour deposited diamondImaging of charge collection properties of a CVD diamond detector
using X-ray-induced current microscopy, 1472
Chemical vapour depositionLow temperature plasma chemical vapour deposition of carbon
nanotubes, 918The effect of nitriding on the diamond film characteristics on
chromium substrates, 1760The fracture stress of chemical vapour deposited diamond, 1913
Ž .Chemical vapour deposition CVDGrain boundaries in boron-doped CVD diamond films, 697
Chemical vapour deposition diamondMicrowave plasma chemical vapour deposition diamond nucleation
on ferrous substrates with Ti and Cr interlayers, 1617
Ž .Chemically vapor-deposited CVD diamondDiamond windows and domes: flexural strength and thermal shock,
218
ChemisorptionCubic boron nitride growth from NH and BBr precursors: a3 3
theoretical study, 1286Reactivity of the hydrogen atoms on diamond surface with various
radical initiators in mild condition, 1360Abstraction of hydrogen atoms on diamond surface using benzoyl
peroxide as a radical initiator, 1374
Chromium nitrideCVD diamond deposition on steel using arc-plated chromium
nitride interlayers, 536
CNx
Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x
CoatingSoft X-ray photoelectron microscopy used for the characterization
of diamond, a-C and CN , thin films, 1068x
Effects of hydrogen incorporation on structural relaxation andvibrational properties of a-CN:H thin films grown by reactivesputtering, 1166
Coating hardnessCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
CoatingsCarbon based coatings for high temperature cutting tool
applications, 176
Coiled nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon
nanotubes, 1081
Columnar structureSmooth and high-rate reactive ion etching of diamond, 824
Combustion growthA process for continuous manufacturing of diamond in atmosphere,
1479
CompositeComposite diamond films with smooth surface and the structural
influence on dielectric properties, 228DLC composite thin films by sputter deposition, 1119
Computer simulationAtomistic simulation of the bombardment process during the BEN
Ž .phase of chemical vapor deposition CVD of diamond, 513Diagnostics of plasma ball formed in high pressure microwave
plasma for diamond film synthesis, 562Analysis of the growth process of diamond films by chemical vapor
deposition, 584Atomic and electronic structures of Si-included C cluster74
studied by HREM and molecular orbital calculations, 935High-resolution electron microscopy and electronic structures of
endohedral La@B N clusters, 94036 36Calculation of the charge spreading along a carbon nanotube seen
Ž .in scanning tunnelling microscopy STM , 961Cubic boron nitride growth from NH and BBr precursors: a3 3
theoretical study, 1286
ConductivityLow temperature properties of the p-type surface conductivity of
diamond, 351
CorrosionThe effects of Si incorporation on the electrochemical and
nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC
overcoats with electrochemical impedance spectroscopy, 1124
Coulomb oscillationFabrication of diamond single-hole transistors using AFM
anodization process, 387
CrackingMechanical analysis for crack-free release of chemical-
vapor-deposited diamond wafers, 1597
Critical number of friction cyclesCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
Crystallization of diamondThermal decomposition of glucose and diamond formation under
diamond-stable high pressure�high temperature conditions, 118
Crystals� 4Simulation of step patterns on natural diamond 111 surfaces, 145
Subject Index for Volume 111974
Cubic BNHigh-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280
Cubic boron nitrideSynthesis and characterization of cubic boron nitride films �
investigations of growth and annealing processes, 1272Cubic boron nitride growth from NH and BBr precursors: a3 3
theoretical study, 1286Reactivity of different tBN environments serving as reaction sites
in cBN film deposition, 1416Relation between stress in cubic boron nitride films and the
in-plane TO phonon energy, 1532
Ž .Cubic boron nitride CBNStresses in pulsed laser deposited cubic boron nitride films, 1276Near-threshold creation of optical centres in electron irradiated
cubic boron nitride, 1774
Current decreaseDC and RF characteristics of 0.7-�m-gate-length diamond
metal�insulator�semiconductor field effect transistor, 378
Cut-off frequencyDC and RF characteristics of 0.7-�m-gate-length diamond
metal�insulator�semiconductor field effect transistor, 378
Cutting edgeThermochemical beveling of CVD diamond films intended for
precision cutting and measurement applications, 1537
Cutting toolHigh-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280
CVDDiamond membrane based structures for miniature X-ray sources,
1Formation of diamond p�n junction and its optical emission
characteristics, 307Effects of light on the ‘primed’ state of CVD diamond nuclear
detectors, 446The CAP-reactor, a novel microwave CVD system for diamond
deposition, 467New technology for high rate synthesis of PC-diamond coatings in
air with photon plasmatron, 472Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001
substrates by positively biased pretreatment, 509Growth of diamond films with bias during microwave plasma
chemical vapor deposition, 523Very adherent CVD diamond film on modified molybdenum sur-
face, 532Analysis of the growth process of diamond films by chemical vapor
deposition, 584Preparation and properties of sub-micron thick and free-standing
diamond membranes, 721Field emission from carbon films deposited on stainless steel
substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4
triode-type field emission arrays, 788Etching of p- and n-type doped monocrystalline diamond using an
ECR oxygen plasma source, 828Characteristics of nickel-containing carbon films deposited using
electron cyclotron resonance CVD, 1031In situ kinetic analysis of SiC filaments CVD, 1234Synthesis of B�C�N thin films by electron beam excited plasma
CVD, 1290Novel BN tassel-like and tree-like nanostructures, 1397Study on the growth of CVD diamond thin films by in situ
reflectivity measurement, 1871
CVD diamondImaging of the sensitivity in detector grade polycrystalline
diamonds using micro-focused X-ray beams, 418Influence of nucleation on hydrogen incorporation in CVD
diamond films, 527Kinetics study of diamond electrodes at different levels of boron
doping as quasi-reversible systems, 1523
CVD diamond filmsHeteroepitaxial growth of erbium carbide on boron doped
Ž .homoepitaxial diamond 100 films, 1332Thermochemical beveling of CVD diamond films intended for
precision cutting and measurement applications, 1537
CVD diamond growthIn situ characterisation of CVD diamond growth under H S2
addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
CVD-diamondThe absorption investigation in CVD-diamond plates and windows
at 50�200 GHz, 1485
Ž .Cyclotron resonance chemical vapor deposition CVDRu-doped nanostructured carbon films, 1890
d.c. plasma CVDDefect induced lowering of work function in graphite-like
materials, 813
DC arc dischargeField emission display with carbon nanotubes cathode: prepared by
a screen-printing process, 1845
DC bias measurementsApplication of two- and four-point contact probes to various
monocrystalline diamond surfaces, 332
DC plasma CVDMicrostructure and stress in nano-crystalline diamond films
deposited by DC glow discharge CVD, 601
Decomposition of glucoseThermal decomposition of glucose and diamond formation under
diamond-stable high pressure�high temperature conditions, 118
Deep-level transient spectroscopyThe origin of charge transients in Al�undoped diamond�p-Si
diodes, 400
DefectTheoretical modeling of sulfur�hydrogen complexes in diamond,
323
DefectsDiffusion of hydrogen from a microwave plasma into diamond and
its interaction with dopants and defects, 316Relaxation in undoped polycrystalline CVD diamond films under
red illumination, 635Grain boundaries in boron-doped CVD diamond films, 697From straight carbon nanotubes to Y-branched and coiled carbon
nanotubes, 1081Highest optical gap tetrahedral amorphous carbon, 1086Investigation of ion implantation-induced damage in the carbon
and silicon sublattices of 6H-SiC, 1239
DensityEngineering properties of fully sp3- to sp2-bonded carbon
films and their modifications after post-growth ionirradiation, 1095
Subject Index for Volume 11 1975
Density functional theoryA spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
Density of statesStructure of nitrogenated amorphous carbon films from NEXAFS,
8A spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
Depletion regionFabrication of diamond single-hole transistors using AFM
anodization process, 387
DepositionThe CAP-reactor, a novel microwave CVD system for diamond
deposition, 467Nanoporosity in plasma deposited amorphous carbon films
investigated by small-angle X-ray scattering, 1946
Deposition conditionsPulsed PECVD deposition of diamond-like carbon films, 1047
Deposition temperatureDependence of the composition and bonding structure of carbon
nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511
DetectorsImaging of the sensitivity in detector grade polycrystalline
diamonds using micro-focused X-ray beams, 418Photoconductivity of highly oriented and randomly oriented
diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors
for the ESA Solar Orbiter, 427
DeuteriumŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,
RBS and TOF-SIMS, 1385
Device modelingOptimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,
1254
DiamondDiamond membrane based structures for miniature X-ray sources,
1Nanocrystalline diamond directly transformed from carbon
nanotubes under high pressure, 87� 4Simulation of step patterns on natural diamond 111 surfaces, 145
Field emission property of chemical vapor deposited diamondoverlayer films, 185
The effect of the growth rate on the concentration of nitrogen andtransition metal impurities in HPHT synthetic diamonds, 204
Size and temperature dependence of nanodiamond�nanographitetransition related with surface stress, 234
Fabrication of diamond flow controller micronozzles, 237n-Type doping of diamond by sulfur and phosphorus, 289The kinetics of the capture of nitrogen by nickel defects in
diamond, 312� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,
328Application of two- and four-point contact probes to various
monocrystalline diamond surfaces, 332A new acceptor state in CVD-diamond, 347DC and RF characteristics of 0.7-�m-gate-length diamond
metal�insulator�semiconductor field effect transistor, 378
Preparation of AlN and LiNbO thin films on diamond substrates3by sputtering method, 408
Photoconductivity of highly oriented and randomly orienteddiamond films for the detection of fast UV laser pulses, 423
Recent progresses of the BOLD investigation towards UV detectorsfor the ESA Solar Orbiter, 427
Effects of light on the ‘primed’ state of CVD diamond nucleardetectors, 446
New technology for high rate synthesis of PC-diamond coatings inair with photon plasmatron, 472
Ž .Fabrication of heteroepitaxial diamond thin films on Ir 001 �Ž .MgO 001 substrates using antenna-edge-type microwave
plasma-assisted chemical vapor deposition, 478Diamond deposition on hardmetal substrates after pre-treatment
with boron or sulfur compounds, 555Recombination-enhanced diffusion of self-interstitial atoms and
vacancy�interstitial recombination in diamond, 618Annealing study of the formation of nickel-related paramagnetic
defects in diamond, 623On the ion-sensitivity of H-terminated surface channel devices on
diamond, 651Classical approximations for ionised impurity scattering applied
to diamond monocrystals, 686Preparation and properties of sub-micron thick and free-standing
diamond membranes, 721Application of diamond coatings onto small dental tools, 731Tribological properties of Al�Si�Cu�Mg alloy-based composite-
dispersing diamond nanocluster, 749Enhanced low-temperature thermionic field emission from
surface-treated N-doped diamond films, 774Field emission from carbon films deposited on stainless steel
substrate, 784High pressure diamond and diamond-like carbon deposition using
a microwave CAP reactor, 1036Soft X-ray photoelectron microscopy used for the characterization
of diamond, a-C and CN , thin films, 1068x
Precursor design in c-BN growth, 1300High rate of diamond deposition through graphite etching in a hot
filament CVD reactor, 1337Electron spin resonance investigation of ion-irradiated diamond,
1391Effects of sp2�sp3 bonding ratios on field emission properties
of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429
Kinetics of diamond spontaneous crystallization from the melt ofthe Fe�Al�C system at 6.5 GPa, 1769
Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897
Diamond adhesionDiamond nucleation and adhesion on sintered nitride ceramics,
1731
Diamond and steelDiamond tools for wire sawing metal components, 742
Diamond coated toolsQuantitative comparison of adhesive toughness for various diamond
films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the
cutting properties of diamond coated Co-cemented tungstencarbide tools, 726
Diamond CVDA new method of formation of impurity-doped diamond films by
bias method, 1804
Subject Index for Volume 111976
Diamond defectsSurface conductivity of nitrogen-doped diamond, 359Implantation-doping of diamond with B�, C�, N� and O� ions
using low temperature annealing, 612Characterisation of electron irradiated boron-doped diamond, 681
Diamond depositionA process for continuous manufacturing of diamond in atmosphere,
1479Diamond nucleation and adhesion on sintered nitride ceramics,
1731
Diamond electrodeFactors controlling the electrochemical potential window for
diamond electrodes in non-aqueous electrolytes, 67Square wave voltammetry on boron-doped diamond electrodes for
analytical determinations, 1670
Diamond electrodesElectrochemical advanced oxidation process for water treatment
using DiaChem� electrodes, 640
Diamond filmThe radiation hardness properties of �-ray for SOD circuits
fabricated on 4-inch SOD wafer, 405Diagnostics of plasma ball formed in high pressure microwave
plasma for diamond film synthesis, 562On effectiveness of various surface treatments on adhesion of
HF-CVD diamond coating to tungsten carbide inserts, 1660
Diamond filmsComposite diamond films with smooth surface and the structural
influence on dielectric properties, 228Synchrotron radiation study of surface versus sub-surface
deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371
The origin of charge transients in Al�undoped diamond�p-Sidiodes, 400
Influence of material properties on the performance of diamondphotocathodes, 437
Electrical properties of graphite�homoepitaxial diamond contact,451
Ž . Ž .Diamond deposition on Si 111 and carbon face 6H�SiC 0001substrates by positively biased pretreatment, 509
Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523
Very adherent CVD diamond film on modified molybdenum sur-face, 532
Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550
Polycrystalline diamond synthesis by means of high power pulsedplasma glow discharge CVD, 573
Analysis of the growth process of diamond films by chemical vapordeposition, 584
The cavity ring-down spectroscopy of C in a microwave plasma,2608
Abrasive stripping voltammetry of silver and tin at boron-dopeddiamond electrodes, 646
Electrochemical activity of boron-doped diamond electrodes grownon carbon fiber cloths, 657
Optical brazing technique for bonding diamond films to zincsulfide, 753
Ion beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4gas mixtures, 833
Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837
Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856
Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953
Calculated energies of adsorption of non-hydrocarbon species onŽ .diamond H�C 1 1 1 surface and the abstraction energies of
these species abstracted by hydrogen atoms using ab initiocalculation,
1560Characterization of boron doped CVD diamond films by Raman
spectroscopy and X-ray diffractometry, 1578Electrochemical behaviour of graphite- and molybdenum
electrodes modified with thin-film diamond, 1690Ohmic contacts on diamond by B ion implantation and Ta�Au
metallization, 1709The effect of nitriding on the diamond film characteristics on
chromium substrates, 1760Nanolithographic modification of diamond, 1788Study on the growth of CVD diamond thin films by in situ
reflectivity measurement, 1871
Diamond growth² :Large area deposition of 100 -textured diamond films by a
60-kW microwave plasma CVD reactor, 596Diamond microwave micro relay, 672
Diamond growth and characterisationInvestigation on boron-doped CVD samples, 338Bias assisted growth on diamond single crystals: the defect
formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487
Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3
493Microwave plasma CVD diamond layers on three-dimensional
structured Si for protective coating, 519Dependence of the growth rate, quality, and morphology of
diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589
Diamond growth and characterizationThe large area deposition of diamond by the multi-cathode direct
Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463
Ž .The formation of a 111 texture of the diamond film onPt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499
Growth of high-quality homoepitaxial diamond films by HF-CVD,504
CVD diamond deposition on steel using arc-plated chromiumnitride interlayers, 536
Studies of pulse operation regime of microwave plasma CVDreactor, 579
Diamond latticeStructure of diamond single crystals of different origins studies
by Kossel’s method, 882
Diamond like carbonCarbon based coatings for high temperature cutting tool
applications, 176
Diamond MEMSDiamond microwave micro relay, 672
Diamond nucleationDiamond nucleation and adhesion on sintered nitride ceramics,
1731
Diamond on steelHigh temperature diffusion chromizing as a successful method for
CVD-diamond coating of steel, 757
Subject Index for Volume 11 1977
Diamond properties and applicationsSchottky junction properties of the high conductivity layer of
diamond, 355RF performance of surface channel diamond FETs with sub-micron
gate length, 382Fabrication of diamond single-hole transistors using AFM
anodization process, 387UV photodetector from Schottky diode diamond film, 442Optimised contact-structures for metal�diamond�metal UV-
detectors, 458Relaxation in undoped polycrystalline CVD diamond films under
red illumination, 635Effect of substrate grain size and surface treatments on the
cutting properties of diamond coated Co-cemented tungstencarbide tools, 726
Diamond tools for wire sawing metal components, 742Electron field emission properties of microcrystalline and
nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799
Wettability and surface energy of oxidized and hydrogenplasma-treated diamond films, 845
Stimulated desorption of D� from diamond: surface versussub-surface processes via resonance dissociative electronattachment, 867
Engineering properties of fully sp3- to sp2-bonded carbonfilms and their modifications after post-growth ionirradiation, 1095
Diamond thin filmsDirect fusion bonding of silicon to polycrystalline diamond, 482
Diamond toolsDiamond tools in stone and civil engineering industry: cutting
principles, wear and applications, 736
Diamond wearDiamond tools in stone and civil engineering industry: cutting
principles, wear and applications, 736
Diamond-coated toolsEffect of WC grain growth inhibitors on the adhesion of chemical
vapor deposition diamond films on WC�Co cemented carbide,242
Diamond-coated tools and filmsThermal conductivity enhancement in cutting tools by chemical
vapor deposition diamond coating, 703
Diamond-like carbonE and H regimes of plasma enhanced chemical vapor deposition
of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92
Time-dependent in-situ Raman observation of atomic hydrogenetching on diamond-like carbon films, 262
Can we reliably estimate the emission field and field enhancementfactor of carbon nanotube film field emitters?, 763
Field emission and Raman spectroscopy studies of atomic hydrogenetching on boron and nitrogen doped DLC films, 804
Effect of nanostructure and back contact material on the fieldemission properties of carbon films, 819
Characteristics of hydrogenated amorphous carbon films depositedby large-area microwave-sustained surface wave plasma, 976
Structural characterization of hard a-C:H films as a function ofthe methane pressure, 980
Plasma chemistry during deposition of a-C:H, 989Is stress necessary to stabilise sp3 bonding in diamond-like
carbon?, 994Influence of the energy of sputtered carbon atoms on the
constitution of diamond-like carbon thin films, 1010
High pressure diamond and diamond-like carbon deposition usinga microwave CAP reactor, 1036
Deposition and properties of amorphous carbon phosphide films,1041
Pulsed PECVD deposition of diamond-like carbon films, 1047Determination of bonding in diamond-like carbon by Raman
spectroscopy, 1053Elastic constants and structural properties of nanometre-thick
diamond-like carbon films, 1062Highest optical gap tetrahedral amorphous carbon, 1086Inert gas diffusion in DLC�Si films, 1091DLC composite thin films by sputter deposition, 1119Tribological properties of diamond-like carbon films prepared by
mass-separated ion beam deposition, 1130Friction coefficient measurements By LFM on DLC films as
function of sputtering deposition parameters, 1135Deposition of amorphous CN by d.c. and rf plasma sputteringx
using a rf radical nitrogen beam source, 1178Optical, anti-reflective and protective properties of diamond and
diamond-like carbon films, 1329Diamond-like carbon films deposited by electron beam excited
plasma chemical vapor deposition, 1353Elastic modulus and structural evolution of diamond-like carbon
films deposited by RF-PACVD, 1441Effect of ion energy on degradation of diamond-like carbon films
exposed to high-energy bombardment from an ion implanter,1447
Diagnosis of dielectric barrier discharge CH plasmas for4
diamond-like carbon film deposition, 1491Threshold effect of admixtures of platinum on the electrochemical
activity of amorphous diamond-like carbon thin films, 1518DLC-based wear protection on magnetic storage media, 1781Structural, mechanical and tribological properties of diamond-like
carbon films prepared under different substrate bias voltage,1837
Spin density in hydrogenated amorphous carbon films�differentoriginations, 1848
Ž .Diamond-like carbon DLCTribological properties of Al�Si�Cu�Mg alloy-based composite-
dispersing diamond nanocluster, 749A new method for evaluating the scratch resistance of diamond-like
carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on
Ti alloy substrate by nano-scratch technique, 1505
Ž .Diamond-like carbon DLC filmEIS capacitance diagnosis of nanoporosity effect on the corrosion
protection of DLC films, 160
Diamond-like carbon filmElectrochemical tests on the carbon protective layer of a hard
disk, 1409
Diamond-like carbon filmsOptical characterization of diamond-like carbon films using
multi-sample modification of variable angle spectroscopicellipsometry, 105
Diamond-like-carbonEffects of sp2�sp3 bonding ratios on field emission properties
of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429
Diamond-like-carbon coatingsDelamination and spalling of diamond-like-carbon tribological
surfaces, 1797
Subject Index for Volume 111978
Dielectric barrier dischargeDiagnosis of dielectric barrier discharge CH plasmas for4
diamond-like carbon film deposition, 1491
Dielectric constantCharacterization of boron carbon nitride films with a low
dielectric constant, 985
Dielectric propertiesComposite diamond films with smooth surface and the structural
influence on dielectric properties, 228
DiffusionRecombination-enhanced diffusion of self-interstitial atoms and
vacancy�interstitial recombination in diamond, 618Inert gas diffusion in DLC�Si films, 1091The effect of nitriding on the diamond film characteristics on
chromium substrates, 1760
Diffusion barrierHigh temperature diffusion chromizing as a successful method for
CVD-diamond coating of steel, 757
DiodeFormation of diamond p�n junction and its optical emission
characteristics, 307The origin of charge transients in Al�undoped diamond�p-Si
diodes, 400
Ž .Direct current DC plasmaThe large area deposition of diamond by the multi-cathode direct
Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463
Dislocation networksPlanar defects and dislocations in HPHT as-grown diamond
crystals, 268
DislocationsThe dislocations of low-angle grain boundaries in GaN epilayers: a
HRTEM quantitative study and finite element stress statecalculation, 910
DLCInvestigating the fracture resistance and adhesion of DLC films
with micro-impact testing, 1606
DLTSIon implantation of sulphur, boron and nitrogen in diamond: a
charge-based deep level transient spectroscopic investigation,342
Dope methodA new method of formation of impurity-doped diamond films by
bias method, 1804
DopingIon implantation of sulphur, boron and nitrogen in diamond: a
charge-based deep level transient spectroscopic investigation,342
Doping p-typeElectrochemical activity of boron-doped diamond electrodes grown
on carbon fiber cloths, 657
Dose dependencePhotoluminescence studies of type IIa and nitrogen doped CVD
diamond, 692
EACVDMonte Carlo simulation of spatial distribution of atomic hydrogen
in electron assisted CVD, 1648
Elastic modulusElastic modulus and structural evolution of diamond-like carbon
films deposited by RF-PACVD, 1441
Electrical conductivityInfluence of annealing on the electronic properties of chemical
vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212
Application of two- and four-point contact probes to variousmonocrystalline diamond surfaces, 332
Space-charge-limited current in hydrogenated amorphous carbonfilms containing silicon and oxygen, 1753
Electrical double-layer capacitanceFactors controlling the electrochemical potential window for
diamond electrodes in non-aqueous electrolytes, 67
Electrical potential windowFactors controlling the electrochemical potential window for
diamond electrodes in non-aqueous electrolytes, 67
Electrical propertiesInfluence of annealing on reverse current of 4H�SiC Schottky
diodes, 1263Nanolithographic modification of diamond, 1788
ElectroanalysisSquare wave voltammetry on boron-doped diamond electrodes for
analytical determinations, 1670
Electrochemical characterizationElectrochemical tests on the carbon protective layer of a hard
disk, 1409
Electrochemical impedanceThe effects of Si incorporation on the electrochemical and
nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC
overcoats with electrochemical impedance spectroscopy, 1124
Ž .Electrochemical impedance spectroscopy EISEIS capacitance diagnosis of nanoporosity effect on the corrosion
protection of DLC films, 160
Electrochemical kineticsThreshold effect of admixtures of platinum on the electrochemical
activity of amorphous diamond-like carbon thin films, 1518
Electrochemical reversibilityKinetics study of diamond electrodes at different levels of boron
doping as quasi-reversible systems, 1523
ElectrochemistryElectrochemical advanced oxidation process for water treatment
using DiaChem� electrodes, 640Abrasive stripping voltammetry of silver and tin at boron-doped
diamond electrodes, 646Electrochemical behaviour of graphite- and molybdenum
electrodes modified with thin-film diamond, 1690
ElectrodeThreshold effect of admixtures of platinum on the electrochemical
activity of amorphous diamond-like carbon thin films, 1518
Electrode arrangementElectrochemical activity of boron-doped diamond electrodes grown
on carbon fiber cloths, 657Kinetics study of diamond electrodes at different levels of boron
doping as quasi-reversible systems, 1523
Electron cyclotron resonanceElectron cyclotron resonance plasma-assisted pulsed laser
deposition of boron carbon nitride films, 1623
Subject Index for Volume 11 1979
Ž .Electron cyclotron resonance ECRGrowth mechanism and properties of the large area well-aligned
carbon nano-structures deposited by microwave plasma electroncyclotron resonance chemical vapor deposition, 922
Ž .Electron cyclotron resonance chemical vapor deposition ECR-CVDMorphology and characterization of highly nitrogenated, aligned,
amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193
Electron cyclotron resonance chemical vapour depositionOn the bonding structure of hydrogenated carbon nitrides grown
by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161
Electron cyclotron resonance microwave plasma chemical vapordeposition
Effects of substrate bias on nanotribologyof a-C:H films depositedby ECR-MPCVD, 1653
Electron diffractionCharacterisation of cold electron emitting carbonaceous films
containing Ni metallic nanocrystals, 809Study of the structure of hard graphite-like amorphous carbon
films by electron diffraction, 1467
Electron emissionGrowth of homoepitaxial diamond doped with nitrogen for electron
emitter, 257
Electron energy loss spectroscopyCharacterisation of smooth fine-grained diamond coatings on
titanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544
Ru-doped nanostructured carbon films, 1890
Electron field emissionElectron field emission properties of microcrystalline and
nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799
Electron irradiationPhotoluminescence studies of type IIa and nitrogen doped CVD
diamond, 692
Electron microscopyThe dislocations of low-angle grain boundaries in GaN epilayers: a
HRTEM quantitative study and finite element stress statecalculation, 910
Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x
Novel BN tassel-like and tree-like nanostructures, 1397Direct growth of c-BN on a mono-structured transition layer by
plasma-enhanced chemical vapor deposition, 1854Ru-doped nanostructured carbon films, 1890
Electron spectroscopySynchrotron radiation study of surface versus sub-surface
deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371
Soft X-ray photoelectron microscopy used for the characterizationof diamond, a-C and CN , thin films, 1068x
Electron spin resonanceHighest optical gap tetrahedral amorphous carbon, 1086
Ž .Electron spin resonance ESRElectron spin resonance investigation of ion-irradiated diamond,
1391
Electron stimulated desorptionStimulated desorption of D� from diamond: surface versus
sub-surface processes via resonance dissociative electron attach-ment, 867
Electron-assisted chemical vapor depositionDiamond deposition at low temperature by using CH �H gas4 2
mixture, 1697
Electron-spin-resonanceParamagnetic centres and microstructure of reactively sputtered
amorphous carbon nitride thin films, 1143
Electronic statesSurface conductivity of nitrogen-doped diamond, 359
Electronic structureInvestigation on boron-doped CVD samples, 338
ElectrophoresisTheory of electrodeposition of diamond nanoparticles, 1572
EllipsometryOptical characterization of diamond-like carbon films using
multi-sample modification of variable angle spectroscopicellipsometry, 105
Analysis of the role of fluorine content on the thermal stabilityof a-C:H:F thin films, 1100
Spectroscopic ellipsometry studies on BN films from IR to vacuumUV energy region, 1281
Emission mechanismField emission site density studies of amorphous carbon films,
1422
Emission sitesField emission site density studies of amorphous carbon films,
1422
Emission spectroscopyIn situ diagnosis of chemical species for the growth of carbon
nanotubes in microwave plasma-enhanced chemical vapordeposition, 59
Energy distributionRole of adsorbates in field emission from nanotubes, 769
Epitaxial filmsOptical investigation of Al Ga N epitaxial films grown onx 1�x
AlN buffer layers, 892
EPREPR studies of a nickel�boron centre in synthetic diamond, 627
EquilibriumTheory of electrodeposition of diamond nanoparticles, 1572
Etching� 4Simulation of step patterns on natural diamond 111 surfaces, 145
Preparation and properties of sub-micron thick and free-standingdiamond membranes, 721
Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837
Ž .The oxidation of 100 textured diamond, 861Calculated energies of adsorption of non-hydrocarbon species on
Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initio
calculation,1560
The action of iron particles at catalyzed hydrogenation of naturaldiamond, 1592
Subject Index for Volume 111980
EvaporationOptical brazing technique for bonding diamond films to zinc
sulfide, 753
FatigueInvestigating the fracture resistance and adhesion of DLC films
with micro-impact testing, 1606
Fe�Al�C systemKinetics of diamond spontaneous crystallization from the melt of
the Fe�Al�C system at 6.5 GPa, 1769
Fe N solvent-catalyst3HPHT synthesis of diamond with high nitrogen content from an
Fe N�C system, 18633
FETRF performance of surface channel diamond FETs with sub-micron
gate length, 382
FibresIn situ kinetic analysis of SiC filaments CVD, 1234
Fibres, Transmission electron microscopy, sp3-BondingTransmission electron microscopy studies of nanofibers formed on
Fe C -carbide, 9317 3
Field emissionField emission property of chemical vapor deposited diamond
overlayer films, 185Time-dependent in-situ Raman observation of atomic hydrogen
etching on diamond-like carbon films, 262Can we reliably estimate the emission field and field enhancement
factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Enhanced low-temperature thermionic field emission from
surface-treated N-doped diamond films, 774Electron emission from hydrogenated and oxidized heteroepitaxial
diamond doped with boron, 780Field emission from carbon films deposited on stainless steel
substrate, 784Study of carbon nanoemitters using CO �CH gas mixtures in2 4
triode-type field emission arrays, 788Field emission, structure, cathodoluminescence and formation
studies of carbon and Si�C�N nanotubes, 793Field emission and Raman spectroscopy studies of atomic hydrogen
etching on boron and nitrogen doped DLC films, 804Defect induced lowering of work function in graphite-like
materials, 813Effect of nanostructure and back contact material on the field
emission properties of carbon films, 819Smooth and high-rate reactive ion etching of diamond, 824Characteristics of hydrogenated amorphous carbon films deposited
by large-area microwave-sustained surface wave plasma, 976Characteristics of nickel-containing carbon films deposited using
electron cyclotron resonance CVD, 1031Field emission site density studies of amorphous carbon films,
1422Effects of sp2�sp3 bonding ratios on field emission properties
of diamond-like carbon films grown by microwave plasmachemical vapor deposition, 1429
Fabrication of vertically aligned carbon nanotubes patterns bychemical vapor deposition for field emitters, 1638
Field emission of polycrystalline diamond films grown bymicrowave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897
Field emission displayField emission display with carbon nanotubes cathode: prepared by
a screen-printing process, 1845
Field emitterGrowth of homoepitaxial diamond doped with nitrogen for electron
emitter, 257
FilmsLow energy post-growth irradiation of amorphous hydrogenated
Ž .carbon a-C:H films, 1026
Filtered arc depositionSubstrate bias effect on amorphous nitrogenated carbon films
deposited by filtered arc deposition, 1227
Filtered vacuum arcStructure and properties of Si incorporated tetrahedral amorphous
carbon films prepared by hybrid filtered vacuum arc process, 198
Flexural strengthDiamond windows and domes: flexural strength and thermal shock,
218
Floating catalyst methodGrowth mechanism of Y-junction carbon nanotubes, 1349
Flow controllerFabrication of diamond flow controller micronozzles, 237
FluorineAnalysis of the role of fluorine content on the thermal stability
of a-C:H:F thin films, 1100Fluorinated a-C:H films investigated by thermal-induced gas
effusion, 1831
Focused ion beam microscopeDelamination and spalling of diamond-like-carbon tribological
surfaces, 1797
Ž .Fourier transform infrared FT-IR spectroscopic ellipsometryVariation of nitrogen incorporation and bonding configuration of
carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183
FractureInvestigating the fracture resistance and adhesion of DLC films
with micro-impact testing, 1606
Fracture stressThe fracture stress of chemical vapour deposited diamond, 1913
Free overhang methodElastic modulus and structural evolution of diamond-like carbon
films deposited by RF-PACVD, 1441
Free standingPreparation and properties of sub-micron thick and free-standing
diamond membranes, 721
Freestanding diamond filmsMechanical analysis for crack-free release of chemical-
vapor-deposited diamond wafers, 1597
FrictionTribological behaviour and chemical characterisation of Si-free
and Si-containing carbon nitride coatings, 169Tribological properties of Al�Si�Cu�Mg alloy-based composite-
dispersing diamond nanocluster, 749Effects of gas pressure and r.f. power on the growth and
properties of magnetron sputter deposited amorphous carbonthin films, 1005
Carbon nitride films with low friction coefficient synthesized bynitrogen-ion-beam-assisted pulsed laser deposition, 1629
Effect of film thickness on the stress and adhesion ofdiamond-like carbon coatings, 1643
Subject Index for Volume 11 1981
Structural, mechanical and tribological properties of diamond-likecarbon films prepared under different substrate bias voltage,1837
Friction coefficientFriction coefficient measurements By LFM on DLC films as
function of sputtering deposition parameters, 1135
Frontier orbital theoryReactivity of different tBN environments serving as reaction sites
in cBN film deposition, 1416
FT-IRThe effect of ammonia�dimethylamine ratio in deposition of
hydrogenated CN films by PE-HF-CVD, 1905x
FTIRInfluence of nucleation on hydrogen incorporation in CVD
diamond films, 527
FTIR spectroscopyŽ .Enhancement of 100 texture in diamond films grown using a
temperature gradient, 1403
FullereneMolecular dynamics calculation of H gas storage in C and2 60
B N clusters, 94536 36
FullerenesCharacterisation of cold electron emitting carbonaceous films
containing Ni metallic nanocrystals, 809
Fusion bondingDirect fusion bonding of silicon to polycrystalline diamond, 482
Gallium nitrideGaN-based heterostructures for sensor applications, 886
Ž .Gallium nitride GaNAtomic-scale models of interactions between inversion domain
boundaries and intrinsic basal stacking faults in GaN, 905
GaNŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by
metalorganic chemical vapour deposition, 901
Grain SizeSize and temperature dependence of nanodiamond�nanographite
transition related with surface stress, 234Surface acoustic waves on nanocrystalline diamond, 677
GraphiteSize and temperature dependence of nanodiamond�nanographite
transition related with surface stress, 234Pulsed laser ablation of graphite in O atmosphere for preparation2
of diamond films and carbon nanotubes, 953Formation of diamond from CaCO in a reduced C�O�H fluid at3
HP�HT, 1496Electrochemical behaviour of graphite- and molybdenum
electrodes modified with thin-film diamond, 1690
Graphite etchingHigh rate of diamond deposition through graphite etching in a hot
filament CVD reactor, 1337
Graphite-like carbonStudy of the structure of hard graphite-like amorphous carbon
films by electron diffraction, 1467
GraphitizationThermal decomposition of glucose and diamond formation under
diamond-stable high pressure�high temperature conditions, 118
Effect of heat treatment on the properties of nano-diamond underoxygen and argon ambient, 249
Growth� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,
328Nanometer rough, sub-micrometer-thick and continuous diamond
chemical vapor deposition film promoted by a synergeticultrasonic effect, 545
Growth mechanism of amorphous hydrogenated carbon, 969IR study of the formation process of polymeric hydrogenated
amorphous carbon film, 1110Study on the growth of CVD diamond thin films by in situ
reflectivity measurement, 1871
Growth rateThe effect of the growth rate on the concentration of nitrogen and
transition metal impurities in HPHT synthetic diamonds, 204Dependence of the growth rate, quality, and morphology of
diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589
H�C�N chemistryInvestigations of the gas phase chemistry in a hot filament CVD
reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567
H gas storage2Molecular dynamics calculation of H gas storage in C and2 60
B N clusters, 94536 36
Hall effectLow temperature properties of the p-type surface conductivity of
diamond, 351
Hall mobilityClassical approximations for ionised impurity scattering applied
to diamond monocrystals, 686
Hard materialPlasma enhanced deposition of silicon carbonitride thin films and
property characterization, 16
HardmetalDiamond deposition on hardmetal substrates after pre-treatment
with boron or sulfur compounds, 555
HardnessMechanical and tribological properties of CN films deposited byx
reactive pulsed laser ablation, 98High-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280Structural characterization of hard a-C:H films as a function of
the methane pressure, 980The effects of Si incorporation on the electrochemical and
nanomechanical properties of DLC thin films, 1074Optical strength in UV region of amorphous carbon, 1106Characterisation of silicon carbide and silicon nitride thin films
and Si N �SiC multilayers, 12483 4Synthesis of B�C�N thin films by electron beam excited plasma
CVD, 1290Diamond-like carbon films deposited by electron beam excited
plasma chemical vapor deposition, 1353
HardnesssSubstrate bias effect on amorphous nitrogenated carbon films
deposited by filtered arc deposition, 1227
Heat treatmentEffect of heat treatment on the properties of nano-diamond under
oxygen and argon ambient, 249
Subject Index for Volume 111982
Heated filamentThe origin of charge transients in Al�undoped diamond�p-Si
diodes, 400
Heteroepitaxial diamondŽ .The formation of a 111 texture of the diamond film on
Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499
Heteroepitaxial interfaceEpitaxial interface of nanocrystalline TiC formed between
Cu-10Sn-15Ti alloy and diamond, 1366
HeteroepitaxyŽ .Fabrication of heteroepitaxial diamond thin films on Ir 001 �
Ž .MgO 001 substrates using antenna-edge-type microwaveplasma-assisted chemical vapor deposition, 478
Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3
493Electron emission from hydrogenated and oxidized heteroepitaxial
diamond doped with boron, 780Heteroepitaxial growth of erbium carbide on boron doped
Ž .homoepitaxial diamond 100 films, 1332
HF-CVDGrowth of high-quality homoepitaxial diamond films by HF-CVD,
504
HF-CVD diamondRaman, photoluminescence and morphological studies of Si- and
Ž .N-doped diamond films grown on Si 100 substrate by hot-filament chemical vapor deposition technique, 75
High deposition rateHigh rate of diamond deposition through graphite etching in a hot
filament CVD reactor, 1337
High pressureNanocrystalline diamond directly transformed from carbon
nanotubes under high pressure, 87Kinetics of diamond spontaneous crystallization from the melt of
the Fe�Al�C system at 6.5 GPa, 1769Synthesis of nanocrystalline nitrogen-rich carbon nitride powders
at high pressure, 1885
High pressure and high temperatureThermal decomposition of glucose and diamond formation under
diamond-stable high pressure�high temperature conditions, 118
High pressure crystal growthPolycrystalline diamond synthesis by means of high power pulsed
plasma glow discharge CVD, 573
High pressure high temperatureHigh-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280Modelling transition metals in diamond, 631Formation of diamond from CaCO in a reduced C�O�H fluid at3
HP�HT, 1496
High pressure plasmaDiagnostics of plasma ball formed in high pressure microwave
plasma for diamond film synthesis, 562
High resolution electron spectroscopySurface vibrations on clean, deuterated, and hydrogenated single
Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365
High resolution scanning electron microscopy
Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858
High temperatureNanocrystalline diamond directly transformed from carbon
nanotubes under high pressure, 87
Ž .High-pressure high-temperature HPHT diamondSpectroscopic study of HPHT synthetic diamonds, as grown at
1500�C, 22
Highly nitrogenated amorphous carbon nitrideMorphology and characterization of highly nitrogenated, aligned,
amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193
Homoepitaxial diamondElectrical properties of MgO�p-diamond junction fabricated on
homoepitaxial single-crystalline diamond, 1952
HomoepitaxyGrowth of homoepitaxial diamond doped with nitrogen for electron
emitter, 257n-Type doping of diamond by sulfur and phosphorus, 289Photoconductivity of highly oriented and randomly oriented
diamond films for the detection of fast UV laser pulses, 423Growth of high-quality homoepitaxial diamond films by HF-CVD,
504Analysis of the growth process of diamond films by chemical vapor
deposition, 584Classical approximations for ionised impurity scattering applied
to diamond monocrystals, 686Nanolithographic modification of diamond, 1788
Hot filamentHigh rate of diamond deposition through graphite etching in a hot
filament CVD reactor, 1337
Hot filament chemical vapour depositionApplication of diamond coatings onto small dental tools, 731
Hot-filament CVDInvestigations of the gas phase chemistry in a hot filament CVD
reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2
mixtures, 567Electron field emission properties of microcrystalline and
nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799
Hot-filament depositionInteractions of Ta-filaments during hot-filament CVD of
BCN-layers, 191
HPHT annealingReport on the influence of HPHT annealing on the 3107cm�1
hydrogen related absorption peak in natural type Ia diamonds,714
HPHT diamondHPHT synthesis of diamond with high nitrogen content from an
Fe N�C system, 18633
HREMArc-melting synthesis of BN nanocapsules from B�Al, TiB and2
VB , 9492
HRTEMIon beam assisted growth of c-BN films on top of c-BN substrates
� a HRTEM study, 38
Subject Index for Volume 11 1983
HTP diamondEPR studies of a nickel�boron centre in synthetic diamond, 627
Hybrid r.f.-PACVD and magnetron sputteringMicrostructure and mechanical properties of WC�C nano-
composite films, 1747
HydrogenInfluence of annealing on the electronic properties of chemical
vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212
Surface vibrations on clean, deuterated, and hydrogenated singleŽ .crystal diamond 100 surfaces studied by high-resolution electron
energy loss spectroscopy, 365Influence of nucleation on hydrogen incorporation in CVD
diamond films, 527Dependence of the growth rate, quality, and morphology of
diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589
Detection of CH bonds from micro Raman spectroscopy onx
polycrystalline boron doped diamond electrodes, 662Report on the influence of HPHT annealing on the 3107cm�1
hydrogen related absorption peak in natural type Ia diamonds,714
Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856
Hydrogen in n-type diamond, 1566The action of iron particles at catalyzed hydrogenation of natural
diamond, 1592
Ž .Hydrogen deuteriumSynchrotron radiation study of surface versus sub-surface
deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371
Hydrogen contentŽ .Enhancement of 100 texture in diamond films grown using a
temperature gradient, 1403
Hydrogen diffusionDiffusion of hydrogen from a microwave plasma into diamond and
its interaction with dopants and defects, 316
Hydrogen etchingTime-dependent in-situ Raman observation of atomic hydrogen
etching on diamond-like carbon films, 262Field emission and Raman spectroscopy studies of atomic hydrogen
etching on boron and nitrogen doped DLC films, 804
Hydrogen terminated diamondLow temperature properties of the p-type surface conductivity of
diamond, 351
Hydrogen-related shallow acceptorSchottky junction properties of the high conductivity layer of
diamond, 355
Hydrogenated amorphous carbonPlasma chemistry during deposition of a-C:H, 989
Hydrogenated carbon nitrideOn the bonding structure of hydrogenated carbon nitrides grown
by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161
HydrogenationBlack diamond: a new material for active electronic devices, 396Wettability and surface energy of oxidized and hydrogen
plasma-treated diamond films, 845
I�VElectrical properties of MgO�p-diamond junction fabricated on
homoepitaxial single-crystalline diamond, 1952
IBADIon beam assisted growth of c-BN films on top of c-BN substrates
� a HRTEM study, 38
ImpactInvestigating the fracture resistance and adhesion of DLC films
with micro-impact testing, 1606
Impuritiesn-Type doping of diamond by sulfur and phosphorus, 289Theoretical modeling of sulfur�hydrogen complexes in diamond,
323Surface conductivity of nitrogen-doped diamond, 359
In situIn situ kinetic analysis of SiC filaments CVD, 1234Study on the growth of CVD diamond thin films by in situ
reflectivity measurement, 1871
In situ characterisationIn situ characterisation of CVD diamond growth under H S2
addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
In situ diagnosticsIn situ plasma diagnostics of the chemistry behind sulfur doping
of CVD diamond films, 301
In situ examinationCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
In situ studyKinetics of diamond spontaneous crystallization from the melt of
the Fe�Al�C system at 6.5 GPa, 1769
Inductively coupled plasmaE and H regimes of plasma enhanced chemical vapor deposition
of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92
Infra redAbstraction of hydrogen atoms on diamond surface using benzoyl
peroxide as a radical initiator, 1374
InfraredInvestigation on boron-doped CVD samples, 338Optical brazing technique for bonding diamond films to zinc
sulfide, 753Relation between stress in cubic boron nitride films and the
in-plane TO phonon energy, 1532
Ž .Infrared IR spectroscopyAnalysis of the role of fluorine content on the thermal stability
of a-C:H:F thin films, 1100
Ž .Infrared IR transmissionThe large area deposition of diamond by the multi-cathode direct
Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463
Ž .Infrared IR windowsDiamond windows and domes: flexural strength and thermal shock,
218
Infrared absorptionUltraviolet photoluminescence and its relation to atomic bonding
properties of hydrogenated amorphous carbon, 53
Subject Index for Volume 111984
InsulatorHigh resistivity and low dielectric constant amorphous carbon
nitride films: application to low-k materials for ULSI, 1219
Integrated circuitThe radiation hardness properties of �-ray for SOD circuits
fabricated on 4-inch SOD wafer, 405
InterfaceEffect of WC grain growth inhibitors on the adhesion of chemical
vapor deposition diamond films on WC�Co cemented carbide,242
Electrical properties of graphite�homoepitaxial diamond contact,451
Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851
GaN-based heterostructures for sensor applications, 886Stoichiometry and interface effects on the electronic and optical
properties of SiC nanoparticles, 1243
Interface�InterfacialOhmic contacts on diamond by B ion implantation and Ta�Au
metallization, 1709
Interfacial adhesionMechanical analysis for crack-free release of chemical-vapor-
deposited diamond wafers, 1597
InterlayerCVD diamond deposition on steel using arc-plated chromium
nitride interlayers, 536
Internal stressŽ .Properties of carbon nitride CN films deposited by ax
high-density plasma ion plating method, 1172Effect of film thickness on the stress and adhesion of
diamond-like carbon coatings, 1643
Ion assisted depositionŽ .Micro-structural analysis of carbon nitride CN film preparedx
by ion beam assisted magnetron sputtering, 1205Modulated CN films prepared by IBAD, 1552x
Ion beam assisted depositionXPS characterization of the composition and bonding states of
elements in CN layers prepared by ion beam assisted deposition,x1149
Ion beam etchingIon beam etching of CVD diamond film in Ar, Ar�O and Ar�CF2 4
gas mixtures, 833
Ion bombardmentAtomistic simulation of the bombardment process during the BEN
Ž .phase of chemical vapor deposition CVD of diamond, 513Influences of substrate bias on the composition and structure of
carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584
Ion channellingBias assisted growth on diamond single crystals: the defect
formation due to ion bombardment studied by ion channelling,electron backscatter diffraction, and micro-Raman spectroscopy,487
Ion energyEffect of ion energy on degradation of diamond-like carbon films
exposed to high-energy bombardment from an ion implanter,1447
Ion implantationIon implantation of sulphur, boron and nitrogen in diamond: a
charge-based deep level transient spectroscopic investigation,342
Implantation-doping of diamond with B�, C�, N� and O� ionsusing low temperature annealing, 612
Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837
Investigation of ion implantation-induced damage in the carbonand silicon sublattices of 6H-SiC, 1239
XPS studies on silicon carbonitride films prepared by sequentialimplantation of nitrogen and carbon into silicon, 1676
Ion irradiationEngineering properties of fully sp3- to sp2-bonded carbon
films and their modifications after post-growth ionirradiation, 1095
Electron spin resonance investigation of ion-irradiated diamond,1391
Ion-assisted depositionDeposition of an InN thin film by a r.f. plasma-assisted reactive
Ž .ion-beam sputtering deposition R-IBSD technique, 896
Ion-beam depositionCarbon films obtained from a C fullerene ion beam, 96460
Ion-implantationNitrogen and phosphorus implanted MESFETs in semi-insulating
4H-SiC, 392Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,
1344
IRDetonation synthesis ultradispersed diamond structural properties
investigation by infrared absorption, 872IR study of the formation process of polymeric hydrogenated
amorphous carbon film, 1110Reactivity of the hydrogen atoms on diamond surface with various
radical initiators in mild condition, 1360
IR absorptionHPHT synthesis of diamond with high nitrogen content from an
Fe N�C system, 18633
IridiumŽ .Fabrication of heteroepitaxial diamond thin films on Ir 001 �
Ž .MgO 001 substrates using antenna-edge-type microwaveplasma-assisted chemical vapor deposition, 478
Analysis of the total carbon deposition during the bias enhancedŽ . 13nucleation of diamond on Ir�SrTiO 001 using C-methane,3
493
Kinetics of crystallizationKinetics of diamond spontaneous crystallization from the melt of
the Fe�Al�C system at 6.5 GPa, 1769
Kossel’s linesStructure of diamond single crystals of different origins studies
by Kossel’s method, 882
LaserNew technology for high rate synthesis of PC-diamond coatings in
air with photon plasmatron, 472Pulsed laser deposition of CN films: role of r.f. nitrogenx
plasma activation for the film structure formation, 1223
Laser ablationMechanical and tribological properties of CN films deposited byx
reactive pulsed laser ablation, 98Excimer laser ablation of silicon carbide ceramic targets, 273
Laser ablation depositionDependence of the composition and bonding structure of carbon
Subject Index for Volume 11 1985
nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511
Laser evaporationA novel CW laser�powder method of carbon single-wall nanotubes
production, 927
Laser processingOptical strength in UV region of amorphous carbon, 1106
Laser reflection interferometryIn situ characterisation of CVD diamond growth under H S2
addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
Lattice distortionEpitaxial interface of nanocrystalline TiC formed between
Cu-10Sn-15Ti alloy and diamond, 1366
Lattice parameterCharacterization of boron doped CVD diamond films by Raman
spectroscopy and X-ray diffractometry, 1578
Low temperatureDiamond deposition at low temperature by using CH �H gas4 2
mixture, 1697
Low temperature magneto-transportLow temperature properties of the p-type surface conductivity of
diamond, 351
Low-kHigh resistivity and low dielectric constant amorphous carbon
nitride films: application to low-k materials for ULSI, 1219
LuminescenceUltraviolet photoluminescence and its relation to atomic bonding
properties of hydrogenated amorphous carbon, 53Optical characterization of natural Argyle diamonds, 125Formation of diamond p�n junction and its optical emission
characteristics, 307Growth of high-quality homoepitaxial diamond films by HF-CVD,
504
MagnetoresistanceMagnetoresistance of boron-doped chemical vapor deposition
polycrystalline diamond films, 49
Magnetron sputteringVariation of nitrogen incorporation and bonding configuration of
carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183
Effect of plasma parameters on the structure of CN layersxdeposited by DC magnetron sputtering, 1200
Mass spectrometryIn situ diagnosis of chemical species for the growth of carbon
nanotubes in microwave plasma-enhanced chemical vapordeposition, 59
In situ characterisation of CVD diamond growth under H S2addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301
Fluorinated a-C:H films investigated by thermal-induced gaseffusion, 1831
Mass-separated ion beam depositionTribological properties of diamond-like carbon films prepared by
mass-separated ion beam deposition, 1130
Mechanical and electrical propertiesMicrostructure and mechanical properties of WC�C nano-
composite films, 1747
Mechanical propertiesCarbon based coatings for high temperature cutting tool
applications, 176Surface acoustic waves on nanocrystalline diamond, 677Structural characterization of hard a-C:H films as a function of
the methane pressure, 980Properties of W�a-C nanometric multilayers produced by
RF-pulsed magnetron sputtering, 1000Mechanical properties and performance of magnetron-sputtered
graded diamond-like carbon films with and without metaladditions, 1139
Mechanical stressStresses in pulsed laser deposited cubic boron nitride films, 1276
MESFETNitrogen and phosphorus implanted MESFETs in semi-insulating
4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,
1254Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,
1344
MetalTribological properties of Al�Si�Cu�Mg alloy-based composite-
dispersing diamond nanocluster, 749The action of iron particles at catalyzed hydrogenation of natural
diamond, 1592
Ž .Metal plasma ion implantation MPIIEffect of ion energy on degradation of diamond-like carbon films
exposed to high-energy bombardment from an ion implanter,1447
Ž .Metal vapor vacuum arc MEVVAEffect of ion energy on degradation of diamond-like carbon films
exposed to high-energy bombardment from an ion implanter,1447
MgO filmElectrical properties of MgO�p-diamond junction fabricated on
homoepitaxial single-crystalline diamond, 1952
MgO�p-diamond junctionElectrical properties of MgO�p-diamond junction fabricated on
homoepitaxial single-crystalline diamond, 1952
Micro Raman spectroscopyPolycrystalline diamond synthesis by means of high power pulsed
plasma glow discharge CVD, 573Detection of CH bonds from micro Raman spectroscopy onx
polycrystalline boron doped diamond electrodes, 662
Micro relayDiamond microwave micro relay, 672
Micro switchDiamond microwave micro relay, 672
Micro-beamImaging of the sensitivity in detector grade polycrystalline
diamonds using micro-focused X-ray beams, 418
Micro-Raman spectroscopyEffect of WC grain growth inhibitors on the adhesion of chemical
vapor deposition diamond films on WC�Co cemented carbide,242
Subject Index for Volume 111986
MicrodischargeLarge scale synthesis of carbon nanotubes by plasma rotating arc
discharge technique, 914
MicromachiningDiamond membrane based structures for miniature X-ray sources,
1
MicronozzleFabrication of diamond flow controller micronozzles, 237
MicrostructureHigh-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280Nanometer rough, sub-micrometer-thick and continuous diamond
chemical vapor deposition film promoted by a synergetic ultra-sonic effect, 545
Thermal diffusivity in diamond, SiC N and BC N , 708x y x ySoft X-ray photoelectron microscopy used for the characterization
of diamond, a-C and CN , thin films, 1068xŽ .Micro-structural analysis of carbon nitride CN film preparedx
by ion beam assisted magnetron sputtering, 1205Diamond-like carbon films deposited by electron beam excited
plasma chemical vapor deposition, 1353Microstructure of diamond-like carbon films prepared by cathodic
arc deposition, 1436Nanoporosity in plasma deposited amorphous carbon films
investigated by small-angle X-ray scattering, 1946
Microstructure evolutionMicrostructure and mechanical properties of WC�C nano-
composite films, 1747
MicrowaveHigh pressure diamond and diamond-like carbon deposition using
a microwave CAP reactor, 1036
Microwave plasmaThe CAP-reactor, a novel microwave CVD system for diamond
deposition, 467Diagnostics of plasma ball formed in high pressure microwave
plasma for diamond film synthesis, 562
Microwave plasma chemical vapor depositionSynthesis and tribological characteristics of nanocrystalline
diamond film using CH �H microwave plasmas, 8774 2Hydrogen in n-type diamond, 1566
Microwave plasma chemical vapor deposition diamondCVD diamond nucleation enhanced by ultrasonic pretreatment
using diamond and mixture of diamond and TaC powders, 1683
Microwave plasma enhanced chemical vapor depositionThe effect of catalysis on the formation of one-dimensional carbon
structured materials, 1019
MigrationThe kinetics of the capture of nitrogen by nickel defects in
diamond, 312Ž .Growth and characterization of SiC micro-crystals on Si 100
substrate by the chemical vapor deposition method, 1703
MIM structureField emission property of chemical vapor deposited diamond
overlayer films, 185
MISFETDC and RF characteristics of 0.7-�m-gate-length diamond
metal�insulator�semiconductor field effect transistor, 378
MM-wavesThe absorption investigation in CVD-diamond plates and windows
at 50�200 GHz, 1485
MobilityClassical approximations for ionised impurity scattering applied
to diamond monocrystals, 686The enhancement of interconnected sp3 sites by chemical effects
during ta-C film growth, 1721
Mode transitionsE and H regimes of plasma enhanced chemical vapor deposition
of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92
ModelingAtomic-scale models of interactions between inversion domain
boundaries and intrinsic basal stacking faults in GaN, 905Calculation of the charge spreading along a carbon nanotube seen
Ž .in scanning tunnelling microscopy STM , 961Influence of the energy of sputtered carbon atoms on the
constitution of diamond-like carbon thin films, 1010From �-MOSFET with silicon on oxide to �-MOSFET with
silicon carbide on nitride, 1268Spectroscopic ellipsometry studies on BN films from IR to vacuum
UV energy region, 1281Calculated energies of adsorption of non-hydrocarbon species on
Ž .diamond H�C 1 1 1 surface and the abstraction energies ofthese species abstracted by hydrogen atoms using ab initio
calculation,1560
ModellingInvestigations of the gas phase chemistry in a hot filament CVD
reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567
Modelling strainModelling transition metals in diamond, 631
Modulated structureModulated CN films prepared by IBAD, 1552x
Moire images´Planar defects and dislocations in HPHT as-grown diamond
crystals, 268
Molecular beam mass spectrometryDiagnosis of dielectric barrier discharge CH plasmas for4
diamond-like carbon film deposition, 1491
Molecular dynamicsMolecular dynamics calculation of H gas storage in C and2 60
B N clusters, 94536 36
MolybdenumElectrochemical behaviour of graphite- and molybdenum
electrodes modified with thin-film diamond, 1690
Monte Carlo simulationMonte Carlo simulation of spatial distribution of atomic hydrogen
in electron assisted CVD, 1648
Monte-Carlo simulationDiamond deposition at low temperature by using CH �H gas4 2
mixture, 1697
Morphology² :Large area deposition of 100 -textured diamond films by a
60-kW microwave plasma CVD reactor, 596
MPECVDŽ .The formation of a 111 texture of the diamond film on
Pt�TiO �SiO �Si substrate by microwave plasma chemical2 x
vapor deposition, 499
Subject Index for Volume 11 1987
N doped CVD diamondPhotoluminescence studies of type IIa and nitrogen doped CVD
diamond, 692
N impuritySpectroscopic study of HPHT synthetic diamonds, as grown at
1500�C, 22
n- Type doping� 4Epitaxial growth of phosphorus doped diamond on 111 substrate,
328
n-type diamondHydrogen in n-type diamond, 1566
n-Type dopingn-Type doping of diamond by sulfur and phosphorus, 289Formation of diamond p�n junction and its optical emission
characteristics, 307Theoretical modeling of sulfur�hydrogen complexes in diamond,
323Implantation-doping of diamond with B�, C�, N� and O� ions
using low temperature annealing, 612
Nano porosityEIS capacitance diagnosis of nanoporosity effect on the corrosion
protection of DLC films, 160
Nano-diamondEffect of heat treatment on the properties of nano-diamond under
oxygen and argon ambient, 249
Nano-indentationEngineering properties of fully sp3- to sp2-bonded carbon
films and their modifications after post-growth ionirradiation, 1095
Nano-scratchA new method for evaluating the scratch resistance of diamond-like
carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on
Ti alloy substrate by nano-scratch technique, 1505
NanocapsulesArc-melting synthesis of BN nanocapsules from B�Al, TiB and2
VB , 9492
Nanocrystalline carbonElectron field emission properties of microcrystalline and
nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799
Nanocrystalline diamondSynthesis and tribological characteristics of nanocrystalline
diamond film using CH �H microwave plasmas, 8774 2
Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858
Ž .Nanocrystalline diamond NCD filmsRu-doped nanostructured carbon films, 1890
Nanocrystalline SiCStoichiometry and interface effects on the electronic and optical
properties of SiC nanoparticles, 1243
NanodiamondDetonation synthesis ultradispersed diamond structural properties
investigation by infrared absorption, 872Theory of electrodeposition of diamond nanoparticles, 1572
NanoindentationA new method for evaluating the scratch resistance of diamond-like
carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on
Ti alloy substrate by nano-scratch technique, 1505The effect of ammonia�dimethylamine ratio in deposition of
hydrogenated CN films by PE-HF-CVD, 1905x
NanoparticleTheory of electrodeposition of diamond nanoparticles, 1572
NanostructuresŽ .Growth and characterization of SiC micro-crystals on Si 100
substrate by the chemical vapor deposition method, 1703
NanotribologyEffects of substrate bias on nanotribologyof a-C:H films deposited
by ECR-MPCVD, 1653
NanotubeLarge scale synthesis of carbon nanotubes by plasma rotating arc
discharge technique, 914
NanotubesNanocrystalline diamond directly transformed from carbon
nanotubes under high pressure, 87Can we reliably estimate the emission field and field enhancement
factor of carbon nanotube film field emitters?, 763Role of adsorbates in field emission from nanotubes, 769Spectroscopic analysis of single-wall carbon nanotubes and carbon
nanotube peapods, 957
Natural diamondThe action of iron particles at catalyzed hydrogenation of natural
diamond, 1592
Natural diamondsOptical characterization of natural Argyle diamonds, 125
Ž .Near-edge X-ray absorption fine structure NEXAFSStructure of nitrogenated amorphous carbon films from NEXAFS,
8
Negative electron affinityA spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
Neutron reflectivityHydrogen concentrations and mass density obtained by X-ray and
neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188
Ni impuritySpectroscopic study of HPHT synthetic diamonds, as grown at
1500�C, 22
Ni nano-crystalsCharacterisation of cold electron emitting carbonaceous films
containing Ni metallic nanocrystals, 809
Ni�Cu alloysThe effect of catalysis on the formation of one-dimensional carbon
structured materials, 1019
NickelOptical characterization of natural Argyle diamonds, 125The kinetics of the capture of nitrogen by nickel defects in
diamond, 312Annealing study of the formation of nickel-related paramagnetic
defects in diamond, 623Characteristics of nickel-containing carbon films deposited using
electron cyclotron resonance CVD, 1031
Subject Index for Volume 111988
Nickel-boron complexEPR studies of a nickel�boron centre in synthetic diamond, 627
NitrideArc-melting synthesis of BN nanocapsules from B�Al, TiB and2
VB , 9492
NitridesReactive DC magnetron sputtering of aluminum nitride films for
surface acoustic wave devices, 413Recent progresses of the BOLD investigation towards UV detectors
for the ESA Solar Orbiter, 427Thermal conductivity enhancement in cutting tools by chemical
vapor deposition diamond coating, 703Optical investigation of Al Ga N epitaxial films grown onx 1�x
AlN buffer layers, 892Deposition of an InN thin film by a r.f. plasma-assisted reactive
Ž .ion-beam sputtering deposition R-IBSD technique, 896The dislocations of low-angle grain boundaries in GaN epilayers: a
HRTEM quantitative study and finite element stress statecalculation, 910
Molecular dynamics calculation of H gas storage in C and2 60B N clusters, 94536 36
XPS characterization of the composition and bonding states ofelements in CN layers prepared by ion beam assisted deposition,x
1149Correlation between surface oxygen content and microstructure of
carbon nitride films, 1153The effect of process parameters on the chemical structure of
pulsed laser deposited carbon nitride films, 1157Effects of hydrogen incorporation on structural relaxation and
vibrational properties of a-CN:H thin films grown by reactivesputtering, 1166
Variation of nitrogen incorporation and bonding configuration ofcarbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183
Effect of plasma parameters on the structure of CN layersx
deposited by DC magnetron sputtering, 1200Preparation and properties of amorphous carbon oxy-nitride films
made by the layer-by-layer method, 1210Response time of photoconductivity of amorphous carbon nitride
films prepared by a nitrogen radical sputter method, 1215High resistivity and low dielectric constant amorphous carbon
nitride films: application to low-k materials for ULSI, 1219From �-MOSFET with silicon on oxide to �-MOSFET with
silicon carbide on nitride, 1268Stresses in pulsed laser deposited cubic boron nitride films, 1276X-Ray absorption study of the bonding structure of BCN
compounds enriched in carbon by CH ion assistance, 12954Influences of substrate bias on the composition and structure of
carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584
NitrogenThe effect of nitrogen addition to Ar�CH plasmas on the growth,4
morphology and field emission of ultrananocrystalline diamond,43
The effect of the growth rate on the concentration of nitrogen andtransition metal impurities in HPHT synthetic diamonds, 204
Paramagnetic centres and microstructure of reactively sputteredamorphous carbon nitride thin films, 1143
Ž .Micro-structural analysis of carbon nitride CN film preparedx
by ion beam assisted magnetron sputtering, 1205Substrate bias effect on amorphous nitrogenated carbon films
deposited by filtered arc deposition, 1227
Optical, anti-reflective and protective properties of diamond anddiamond-like carbon films, 1329
Nitrogen aggregationThe kinetics of the capture of nitrogen by nickel defects in
diamond, 312
Nitrogen incorporation conditionsCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
Nitrogen-dopedGrowth of homoepitaxial diamond doped with nitrogen for electron
emitter, 257
Non-aqueous electrolytesFactors controlling the electrochemical potential window for
diamond electrodes in non-aqueous electrolytes, 67
NucleationAtomistic simulation of the bombardment process during the BEN
Ž .phase of chemical vapor deposition CVD of diamond, 513Microwave plasma CVD diamond layers on three-dimensional
structured Si for protective coating, 519Influence of nucleation on hydrogen incorporation in CVD
diamond films, 527Nanometer rough, sub-micrometer-thick and continuous diamond
chemical vapor deposition film promoted by a synergeticultrasonic effect, 545
Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550
Reactivity of different tBN environments serving as reaction sitesin cBN film deposition, 1416
CVD diamond nucleation enhanced by ultrasonic pretreatmentusing diamond and mixture of diamond and TaC powders, 1683
Ohmic contactApplication of two- and four-point contact probes to various
monocrystalline diamond surfaces, 332Electrical properties of graphite�homoepitaxial diamond contact,
451Ohmic contacts on diamond by B ion implantation and Ta�Au
metallization, 1709
One-dimensional carbon structured materialsThe effect of catalysis on the formation of one-dimensional carbon
structured materials, 1019
Optical bandgapDeposition and properties of amorphous carbon phosphide films,
1041
Optical emission spectrometryIn situ plasma diagnostics of the chemistry behind sulfur doping
of CVD diamond films, 301Diagnosis of dielectric barrier discharge CH plasmas for4
diamond-like carbon film deposition, 1491
Optical emission spectroscopyIn situ characterisation of CVD diamond growth under H S2
addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
Ž .Properties of carbon nitride CN films deposited by ax
high-density plasma ion plating method, 1172
Optical propertiesOptical characterization of diamond-like carbon films using
multi-sample modification of variable angle spectroscopicellipsometry, 105
Highest optical gap tetrahedral amorphous carbon, 1086
Subject Index for Volume 11 1989
Optical studyOptical investigation of Al Ga N epitaxial films grown onx 1�x
AlN buffer layers, 892
Optoelectronic propertiesEffects of light on the ‘primed’ state of CVD diamond nuclear
detectors, 446Optical, anti-reflective and protective properties of diamond and
diamond-like carbon films, 1329
Outer-sphere reactionFactors controlling the electrochemical potential window for
diamond electrodes in non-aqueous electrolytes, 67
OxidationEffect of heat treatment on the properties of nano-diamond under
oxygen and argon ambient, 249Electrochemical advanced oxidation process for water treatment
using DiaChem� electrodes, 640Preparation and properties of amorphous carbon oxy-nitride films
made by the layer-by-layer method, 1210A spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
p-type conductivityBlack diamond: a new material for active electronic devices, 396
p-Type dopingInfluence of the environment on the surface conductivity of
chemical vapor deposition diamond, 856
Paramagnetic defectsAnnealing study of the formation of nickel-related paramagnetic
defects in diamond, 623
ParamagnetismParamagnetic centres and microstructure of reactively sputtered
amorphous carbon nitride thin films, 1143
PassivationDiffusion of hydrogen from a microwave plasma into diamond and
its interaction with dopants and defects, 316
PatternsFabrication of vertically aligned carbon nanotubes patterns by
chemical vapor deposition for field emitters, 1638
PeapodsSpectroscopic analysis of single-wall carbon nanotubes and carbon
nanotube peapods, 957
PECVDEffects of thermal annealing on amorphous carbon nitride films by
r.f. PECVD, 1633
PentachlorophenolSquare wave voltammetry on boron-doped diamond electrodes for
analytical determinations, 1670
pHOn the ion-sensitivity of H-terminated surface channel devices on
diamond, 651
Phase changeŽ .Growth and characterization of SiC micro-crystals on Si 100
substrate by the chemical vapor deposition method, 1703
Phase stabilisationPrecursor design in c-BN growth, 1300
PhononSurface vibrations on clean, deuterated, and hydrogenated single
Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365
Relation between stress in cubic boron nitride films and thein-plane TO phonon energy, 1532
Phosphorus dopingEtching of p- and n-type doped monocrystalline diamond using an
ECR oxygen plasma source, 828Deposition and properties of amorphous carbon phosphide films,
1041
PhotoconductivityImaging deep UV light with diamond-based systems, 433Response time of photoconductivity of amorphous carbon nitride
films prepared by a nitrogen radical sputter method, 1215Imaging of charge collection properties of a CVD diamond detector
using X-ray-induced current microscopy, 1472
PhotodetectorUV photodetector from Schottky diode diamond film, 442
PhotodetectorsImaging deep UV light with diamond-based systems, 433
PhotoelectricalInfluence of material properties on the performance of diamond
photocathodes, 437
Photoelectron spectroscopyThermal diffusivity in diamond, SiC N and BC N , 708x y x y
Ž .The oxidation of 100 textured diamond, 861
PhotoluminescenceSpectroscopic study of HPHT synthetic diamonds, as grown at
1500�C, 22Raman, photoluminescence and morphological studies of Si- and
Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75
Characterisation of electron irradiated boron-doped diamond, 681Photoluminescence studies of type IIa and nitrogen doped CVD
diamond, 692Multi-band structure of amorphous carbon luminescence, 1115
Ž .Growth and characterization of SiC micro-crystals on Si 100substrate by the chemical vapor deposition method, 1703
Near-threshold creation of optical centres in electron irradiatedcubic boron nitride, 1774
Transmission electron microscope radiation damage of 4H and 6HSiC studied by photoluminescence spectroscopy, 1923
Photon stimulated ion desorptionSynchrotron radiation study of surface versus sub-surface
deuterium in diamond films produced by exposure to deuteriumactivated by hot filament-high vacuum and ex situ microwaveplasma, 371
Photonelectron spectroscopyAnalysis of the role of fluorine content on the thermal stability
of a-C:H:F thin films, 1100
PhotoresponseRelaxation in undoped polycrystalline CVD diamond films under
red illumination, 635
Physical vapor depositionPulsed laser ablation of graphite in O atmosphere for preparation2
of diamond films and carbon nanotubes, 953Mechanical properties and performance of magnetron-sputtered
graded diamond-like carbon films with and without metaladditions, 1139
Microstructure of diamond-like carbon films prepared by cathodicarc deposition, 1436
Subject Index for Volume 111990
Physical vapour depositionThermal diffusivity in diamond, SiC N and BC N , 708x y x y
PiezoresistanceReactive ion etching of CVD-diamond for piezoresistive pressure
sensors, 841
PinholesThe effects of Si incorporation on the electrochemical and
nanomechanical properties of DLC thin films, 1074Evaluation of corrosion performance of ultra-thin Si-DLC
overcoats with electrochemical impedance spectroscopy, 1124
Planar contact geometryOptimised contact-structures for metal�diamond�metal UV-
detectors, 458
Planar defectsAtomic-scale models of interactions between inversion domain
boundaries and intrinsic basal stacking faults in GaN, 905
PlasmaThe effect of nitrogen addition to Ar�CH plasmas on the growth,4
morphology and field emission of ultrananocrystalline diamond,43
New technology for high rate synthesis of PC-diamond coatings inair with photon plasmatron, 472
Chemical vapor deposition diamond thin films growth on Ti6AL4Vusing the Surfatron system, 550
The cavity ring-down spectroscopy of C in a microwave plasma,2608
Large scale synthesis of carbon nanotubes by plasma rotating arcdischarge technique, 914
Low temperature plasma chemical vapour deposition of carbonnanotubes, 918
Growth mechanism of amorphous hydrogenated carbon, 969High pressure diamond and diamond-like carbon deposition using
a microwave CAP reactor, 1036Synthesis of B�C�N thin films by electron beam excited plasma
CVD, 1290
Plasma assisted pulsed laser depositionInfluences of substrate bias on the composition and structure of
carbon nitride thin films prepared by ECR-plasma assisted pulsedlaser deposition, 1584
Plasma beam assisted depositionPlasma enhanced deposition of silicon carbonitride thin films and
property characterization, 16
Plasma enhanced chemical vapor depositionE and H regimes of plasma enhanced chemical vapor deposition
of diamond-like carbon film in low frequency inductivelycoupled plasma reactor, 92
Plasma-assisted chemical vapor depositionCharacterization of boron carbon nitride films with a low
dielectric constant, 985
Plasma-assisted depositionElectron cyclotron resonance plasma-assisted pulsed laser
deposition of boron carbon nitride films, 1623
PlatinumThreshold effect of admixtures of platinum on the electrochemical
activity of amorphous diamond-like carbon thin films, 1518
PolycrystallineMagnetoresistance of boron-doped chemical vapor deposition
polycrystalline diamond films, 49Surface acoustic waves on nanocrystalline diamond, 677
Polycrystalline diamond filmUV photodetector from Schottky diode diamond film, 442
Polycrystalline diamond filmsDetection of CH bonds from micro Raman spectroscopy onx
polycrystalline boron doped diamond electrodes, 662
Post-growthLow energy post-growth irradiation of amorphous hydrogenated
Ž .carbon a-C:H films, 1026
Potentiodynamic curvesEvaluation of corrosion performance of ultra-thin Si-DLC
overcoats with electrochemical impedance spectroscopy, 1124
Powder technologyA novel CW laser�powder method of carbon single-wall nanotubes
production, 927
Pre-treated substrateApplication of diamond coatings onto small dental tools, 731
Preferential orientationPreparation of AlN and LiNbO thin films on diamond substrates3
by sputtering method, 408
PressureDependence of the growth rate, quality, and morphology of
diamond coatings on the pressure during the CVD-process in anindustrial hot-filament plant, 589
Pressure sensorReactive ion etching of CVD-diamond for piezoresistive pressure
sensors, 841
Pretreated substratesNanometer rough, sub-micrometer-thick and continuous diamond
chemical vapor deposition film promoted by a synergeticultrasonic effect, 545
CVD diamond nucleation enhanced by ultrasonic pretreatmentusing diamond and mixture of diamond and TaC powders, 1683
Ohmic contacts on diamond by B ion implantation and Ta�Aumetallization, 1709
The effect of nitriding on the diamond film characteristics onchromium substrates, 1760
ProcessingSilicon carbide Schottky and ohmic contact process dependence,
1258
Pt�TiO �SiO �Si2 xŽ .The formation of a 111 texture of the diamond film on
Pt�TiO �SiO �Si substrate by microwave plasma chemical2 xvapor deposition, 499
Pulsed glow discharge CVDPolycrystalline diamond synthesis by means of high power pulsed
plasma glow discharge CVD, 573
Pulsed laser ablationEffect of nanostructure and back contact material on the field
emission properties of carbon films, 819
Pulsed laser depositionCorrelation between surface oxygen content and microstructure of
carbon nitride films, 1153The effect of process parameters on the chemical structure of
pulsed laser deposited carbon nitride films, 1157Stresses in pulsed laser deposited cubic boron nitride films, 1276Electron cyclotron resonance plasma-assisted pulsed laser
deposition of boron carbon nitride films, 1623Carbon nitride films with low friction coefficient synthesized by
nitrogen-ion-beam-assisted pulsed laser deposition, 1629
Subject Index for Volume 11 1991
Pulsed MPACVD reactorStudies of pulse operation regime of microwave plasma CVD
reactor, 579
Pulsed PECVDPulsed PECVD deposition of diamond-like carbon films, 1047
Pulsed RF biasPulsed PECVD deposition of diamond-like carbon films, 1047
Radiation damageRecombination-enhanced diffusion of self-interstitial atoms and
vacancy�interstitial recombination in diamond, 618
Radiation hardnessThe radiation hardness properties of �-ray for SOD circuits
fabricated on 4-inch SOD wafer, 405
Radiation induced defectsEffects of light on the ‘primed’ state of CVD diamond nuclear
detectors, 446Implantation-doping of diamond with B�, C�, N� and O� ions
using low temperature annealing, 612Transmission electron microscope radiation damage of 4H and 6H
SiC studied by photoluminescence spectroscopy, 1923
Radiation-induced defectsNear-threshold creation of optical centres in electron irradiated
cubic boron nitride, 1774
RadicalReactivity of the hydrogen atoms on diamond surface with various
radical initiators in mild condition, 1360Abstraction of hydrogen atoms on diamond surface using benzoyl
peroxide as a radical initiator, 1374
Ž .Radio frequency r.f.Pulsed laser deposition of CN films: role of r.f. nitrogenx
plasma activation for the film structure formation, 1223
RamanŽ .Properties of carbon nitride CN films deposited by ax
high-density plasma ion plating method, 1172Stoichiometry and interface effects on the electronic and optical
properties of SiC nanoparticles, 1243
Raman and IR spectroscopyEffects of hydrogen incorporation on structural relaxation and
vibrational properties of a-CN:H thin films grown by reactivesputtering, 1166
Raman characterisationDiamond nucleation and adhesion on sintered nitride ceramics,
1731
Raman scatteringRaman, photoluminescence and morphological studies of Si- and
Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75
Effect of nanostructure and back contact material on the fieldemission properties of carbon films, 819
Raman spectraCarbon films obtained from a C fullerene ion beam, 96460
Raman spectroscopyTime-dependent in-situ Raman observation of atomic hydrogen
etching on diamond-like carbon films, 262Influence of material properties on the performance of diamond
photocathodes, 437Bias assisted growth on diamond single crystals: the defect
formation due to ion bombardment studied by ion channelling,
electron backscatter diffraction, and micro-Raman spectroscopy,487
Growth of diamond films with bias during microwave plasmachemical vapor deposition, 523
Microstructure and stress in nano-crystalline diamond filmsdeposited by DC glow discharge CVD, 601
Study of carbon nanoemitters using CO �CH gas mixtures in2 4triode-type field emission arrays, 788
Field emission and Raman spectroscopy studies of atomic hydrogenetching on boron and nitrogen doped DLC films, 804
Enhancement of the etch rate of CVD diamond by prior C and Geimplantation, 837
Spectroscopic analysis of single-wall carbon nanotubes and carbonnanotube peapods, 957
Effects of gas pressure and r.f. power on the growth andproperties of magnetron sputter deposited amorphous carbonthin films, 1005
Determination of bonding in diamond-like carbon by Ramanspectroscopy, 1053
Elastic constants and structural properties of nanometre-thickdiamond-like carbon films, 1062
The effects of Si incorporation on the electrochemical andnanomechanical properties of DLC thin films, 1074
Hydrogen concentrations and mass density obtained by X-ray andneutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188
A process for continuous manufacturing of diamond in atmosphere,1479
Characterisation of smooth fine-grained diamond coatings ontitanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544
Characterization of boron doped CVD diamond films by Ramanspectroscopy and X-ray diffractometry, 1578
The effect of ammonia�dimethylamine ratio in deposition ofhydrogenated CN films by PE-HF-CVD, 1905x
Reactive ion etchingSmooth and high-rate reactive ion etching of diamond, 824Reactive ion etching of CVD-diamond for piezoresistive pressure
sensors, 841
Reactive ion etching etchingEtching of p- and n-type doped monocrystalline diamond using an
ECR oxygen plasma source, 828
Reactor designThe CAP-reactor, a novel microwave CVD system for diamond
deposition, 467
RearrangementThe enhancement of interconnected sp3 sites by chemical effects
during ta-C film growth, 1721
Recrystallization of graphiteThermal decomposition of glucose and diamond formation under
diamond-stable high pressure�high temperature conditions, 118
Reduction of residual stressStructure and properties of Si incorporated tetrahedral amorphous
carbon films prepared by hybrid filtered vacuum arc process, 198
RelaxationRelaxation in undoped polycrystalline CVD diamond films under
red illumination, 635
REMPI measurementsInvestigations of the gas phase chemistry in a hot filament CVD
reactor operating with CH �N �H and CH �NH �H gas4 2 2 4 3 2mixtures, 567
Subject Index for Volume 111992
Residual stressMechanical analysis for crack-free release of chemical-vapor-
deposited diamond wafers, 1597Delamination and spalling of diamond-like-carbon tribological
surfaces, 1797
RF performanceRF performance of surface channel diamond FETs with sub-micron
gate length, 382
Rf radical beamDeposition of amorphous CN by d.c. and rf plasma sputteringx
using a rf radical nitrogen beam source, 1178
RIEReactive ion etching of CVD-diamond for piezoresistive pressure
sensors, 841
Ru-dopedRu-doped nanostructured carbon films, 1890
Rutherford backscatteringŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,
RBS and TOF-SIMS, 1385
Scanning electron microscopyInfluence of material properties on the performance of diamond
photocathodes, 437Correlation between surface oxygen content and microstructure of
carbon nitride films, 1153Diamond nucleation and adhesion on sintered nitride ceramics,
1731
Scanning probe microscopyEffects of substrate bias on nanotribologyof a-C:H films deposited
by ECR-MPCVD, 1653
Scanning tunneling microscopyInfluence of annealing on the electronic properties of chemical
vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212
Ž .Scanning tunnelling microscopy STMCalculation of the charge spreading along a carbon nanotube seen
Ž .in scanning tunnelling microscopy STM , 961
Schottky diodeUV photodetector from Schottky diode diamond film, 442Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851
Silicon carbide Schottky and ohmic contact process dependence,1258
Influence of annealing on reverse current of 4H�SiC Schottkydiodes, 1263
Heteroepitaxial growth of erbium carbide on boron dopedŽ .homoepitaxial diamond 100 films, 1332
Schottky junctionsSchottky junction properties of the high conductivity layer of
diamond, 355
Screen-printingField emission display with carbon nanotubes cathode: prepared by
a screen-printing process, 1845
SEMStudy of carbon nanoemitters using CO �CH gas mixtures in2 4
triode-type field emission arrays, 788
SemiconductorsHydrogen in n-type diamond, 1566
Sensitivity mapImaging of the sensitivity in detector grade polycrystalline
diamonds using micro-focused X-ray beams, 418
SensorsMicrowave plasma CVD diamond layers on three-dimensional
structured Si for protective coating, 519On the ion-sensitivity of H-terminated surface channel devices on
diamond, 651
Shape transition mapCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
Si doped DLCEvaluation of corrosion performance of ultra-thin Si-DLC
overcoats with electrochemical impedance spectroscopy, 1124
Si incorporationStructure and properties of Si incorporated tetrahedral amorphous
carbon films prepared by hybrid filtered vacuum arc process, 198
Ž .Si-doped diamond-like carbon DLCThe effects of Si incorporation on the electrochemical and
nanomechanical properties of DLC thin films, 1074
Si�N dopingRaman, photoluminescence and morphological studies of Si- and
Ž .N-doped diamond films grown on Si 100 substrate byhot-filament chemical vapor deposition technique, 75
SiCNitrogen and phosphorus implanted MESFETs in semi-insulating
4H-SiC, 392Optimization of 2H, 4H and 6H�SiC high speed vertical MESFETs,
1254Influence of annealing on reverse current of 4H�SiC Schottky
diodes, 1263Fully ion implanted MESFETs in bulk semi-insulating 4H�SiC,
1344
SiliconAtomic and electronic structures of Si-included C cluster74
studied by HREM and molecular orbital calculations, 935Space-charge-limited current in hydrogenated amorphous carbon
films containing silicon and oxygen, 1753
Silicon carbideExcimer laser ablation of silicon carbide ceramic targets, 273Inert gas diffusion in DLC�Si films, 1091In situ kinetic analysis of SiC filaments CVD, 1234Investigation of ion implantation-induced damage in the carbon
and silicon sublattices of 6H-SiC, 1239Characterisation of silicon carbide and silicon nitride thin films
and Si N �SiC multilayers, 12483 4Transmission electron microscope radiation damage of 4H and 6H
SiC studied by photoluminescence spectroscopy, 1923
Ž .Silicon carbide SiCSilicon carbide Schottky and ohmic contact process dependence,
1258
Silicon carbonitridePlasma enhanced deposition of silicon carbonitride thin films and
property characterization, 16XPS studies on silicon carbonitride films prepared by sequential
implantation of nitrogen and carbon into silicon, 1676
Silicon nitrideCharacterisation of silicon carbide and silicon nitride thin films
and Si N �SiC multilayers, 12483 4
Subject Index for Volume 11 1993
Silicon-carbon nitrideTribological behaviour and chemical characterisation of Si-free
and Si-containing carbon nitride coatings, 169
Silicon-on-diamondThe radiation hardness properties of �-ray for SOD circuits
fabricated on 4-inch SOD wafer, 405Direct fusion bonding of silicon to polycrystalline diamond, 482
Single-hole transistorFabrication of diamond single-hole transistors using AFM
anodization process, 387
Sintered nitride substratesDiamond nucleation and adhesion on sintered nitride ceramics,
1731
SmoothComposite diamond films with smooth surface and the structural
influence on dielectric properties, 228
SOIFrom �-MOSFET with silicon on oxide to �-MOSFET with
silicon carbide on nitride, 1268
Solid lubricantFriction coefficient measurements By LFM on DLC films as
function of sputtering deposition parameters, 1135
Sonic flowFabrication of diamond flow controller micronozzles, 237
sp2 BondingCalculation of the charge spreading along a carbon nanotube seen
Ž .in scanning tunnelling microscopy STM , 961Spin density in hydrogenated amorphous carbon films�different
originations, 1848
sp2�sp3 bondingDefect induced lowering of work function in graphite-like
materials, 813
sp3 BondTribological properties of diamond-like carbon films prepared by
mass-separated ion beam deposition, 1130
sp3 BondingIs stress necessary to stabilise sp3 bonding in diamond-like
carbon?, 994Influence of the energy of sputtered carbon atoms on the
constitution of diamond-like carbon thin films, 1010Spin density in hydrogenated amorphous carbon films�different
originations, 1848
sp3-BondingCubic boron nitride growth from NH and BBr precursors: a3 3
theoretical study, 1286
SpallingDelamination and spalling of diamond-like-carbon tribological
surfaces, 1797
Spatial distribution of atomic hydrogenMonte Carlo simulation of spatial distribution of atomic hydrogen
in electron assisted CVD, 1648
SpectroscopyInfluence of annealing on the electronic properties of chemical
vapor deposited diamond films studied by high vacuum scanningtunneling microscopy and spectroscopy, 212
The cavity ring-down spectroscopy of C in a microwave plasma,2608
Low temperature plasma chemical vapour deposition of carbonnanotubes, 918
Pulsed laser ablation of graphite in O atmosphere for preparation2of diamond films and carbon nanotubes, 953
Plasma chemistry during deposition of a-C:H, 989IR study of the formation process of polymeric hydrogenated
amorphous carbon film, 1110Pulsed laser deposition of CN films: role of r.f. nitrogenx
plasma activation for the film structure formation, 1223A spectroscopic study of the negative electron affinity of cesium
Ž .oxide-coated diamond 111 and theoretical calculation of theŽ .surface density-of-states on oxygenated diamond 111 , 1379
Synthesis of nanocrystalline nitrogen-rich carbon nitride powdersat high pressure, 1885
Spiral growthEpitaxial interface of nanocrystalline TiC formed between
Cu-10Sn-15Ti alloy and diamond, 1366
Sputter depositionDLC composite thin films by sputter deposition, 1119
Sputter erosion rateModulated CN films prepared by IBAD, 1552x
SputteringCarbon based coatings for high temperature cutting tool
applications, 176Reactive DC magnetron sputtering of aluminum nitride films for
surface acoustic wave devices, 413Properties of W�a-C nanometric multilayers produced by RF-
pulsed magnetron sputtering, 1000Effects of gas pressure and r.f. power on the growth and
properties of magnetron sputter deposited amorphous carbonthin films, 1005
Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010
Effects of hydrogen incorporation on structural relaxation andvibrational properties of a-CN:H thin films grown by reactivesputtering, 1166
Synthesis and characterization of cubic boron nitride films �
investigations of growth and annealing processes, 1272
Square wave voltammetrySquare wave voltammetry on boron-doped diamond electrodes for
analytical determinations, 1670
SQUIDArc-melting synthesis of BN nanocapsules from B�Al, TiB and2
VB , 9492
Stacking faultsPlanar defects and dislocations in HPHT as-grown diamond
crystals, 268
SteelCVD diamond deposition on steel using arc-plated chromium
nitride interlayers, 536
Stone cuttingDiamond tools in stone and civil engineering industry: cutting
principles, wear and applications, 736
Stone processingDiamond tools in stone and civil engineering industry: cutting
principles, wear and applications, 736
StrainŽ .Initial stages of GaN buffer layer growth on 0001 sapphire by
metalorganic chemical vapour deposition, 901
Subject Index for Volume 111994
StressThe dislocations of low-angle grain boundaries in GaN epilayers: a
HRTEM quantitative study and finite element stress statecalculation, 910
Structural characterization of hard a-C:H films as a function ofthe methane pressure, 980
Is stress necessary to stabilise sp3 bonding in diamond-likecarbon?, 994
Influence of the energy of sputtered carbon atoms on theconstitution of diamond-like carbon thin films, 1010
Characterisation of silicon carbide and silicon nitride thin filmsand Si N �SiC multilayers, 12483 4
Synthesis and characterization of cubic boron nitride films �
investigations of growth and annealing processes, 1272Relation between stress in cubic boron nitride films and the
in-plane TO phonon energy, 1532Electrochemical behaviour of graphite- and molybdenum
electrodes modified with thin-film diamond, 1690
Stress relaxationMicrostructure and stress in nano-crystalline diamond films
deposited by DC glow discharge CVD, 601
Structural evolutionElastic modulus and structural evolution of diamond-like carbon
films deposited by RF-PACVD, 1441
StructureHigh-resolution electron microscopy and electronic structures of
endohedral La@B N clusters, 94036 36Determination of bonding in diamond-like carbon by Raman
spectroscopy, 1053Inert gas diffusion in DLC�Si films, 1091Novel BN tassel-like and tree-like nanostructures, 1397Study of the structure of hard graphite-like amorphous carbon
films by electron diffraction, 1467Dependence of the composition and bonding structure of carbon
nitride films deposited by direct current plasma assisted pulsedlaser ablation on the deposition temperature, 1511
Fluorinated a-C:H films investigated by thermal-induced gaseffusion, 1831
Structure perfectionStructure of diamond single crystals of different origins studies
by Kossel’s method, 882
Sub-micronPreparation and properties of sub-micron thick and free-standing
diamond membranes, 721
Substrate bias voltageStructural, mechanical and tribological properties of diamond-like
carbon films prepared under different substrate bias voltage,1837
Substrate treatmentOn effectiveness of various surface treatments on adhesion of
HF-CVD diamond coating to tungsten carbide inserts, 1660
Sulfochromic treatmentOptimised contact-structures for metal�diamond�metal UV-
detectors, 458
Sulfur dopingIn situ characterisation of CVD diamond growth under H S2
addition by optical emission spectroscopy, mass spectroscopyand laser reflection interferometry, 296
In situ plasma diagnostics of the chemistry behind sulfur dopingof CVD diamond films, 301
Sulfur effectsElectron field emission properties of microcrystalline and
nanocrystalline carbon thin films deposited by S-assisted hotfilament CVD, 799
Sulfur-dopingA new acceptor state in CVD-diamond, 347
SulphurIon implantation of sulphur, boron and nitrogen in diamond: a
charge-based deep level transient spectroscopic investigation,342
SurfaceTheoretical modeling of sulfur�hydrogen complexes in diamond,
323Surface conductivity of nitrogen-doped diamond, 359Surface vibrations on clean, deuterated, and hydrogenated single
Ž .crystal diamond 100 surfaces studied by high-resolution electronenergy loss spectroscopy, 365
Very adherent CVD diamond film on modified molybdenum sur-face, 532
Photoelectron spectroscopy of boron-doped homoepitaxial diamondŽ .100 surfaces with several terminations and related Schottkybarriers, 851
Influence of the environment on the surface conductivity ofchemical vapor deposition diamond, 856
Ž .The oxidation of 100 textured diamond, 861Stimulated desorption of D� from diamond: surface versus
sub-surface processes via resonance dissociative electron attach-ment, 867
Reactivity of the hydrogen atoms on diamond surface with variousradical initiators in mild condition, 1360
Abstraction of hydrogen atoms on diamond surface using benzoylperoxide as a radical initiator, 1374
The absorption investigation in CVD-diamond plates and windowsat 50�200 GHz, 1485
Surface acoustic waveReactive DC magnetron sputtering of aluminum nitride films for
surface acoustic wave devices, 413
Surface acoustic wave devicePreparation of AlN and LiNbO thin films on diamond substrates3
by sputtering method, 408
Surface conductivityLow temperature properties of the p-type surface conductivity of
diamond, 351Schottky junction properties of the high conductivity layer of
diamond, 355
Surface energyWettability and surface energy of oxidized and hydrogen
plasma-treated diamond films, 845
Surface enhanced Raman spectroscopyDetection of nanophase at the surface of HFCVD grown diamond
films using surface enhanced Raman spectroscopic technique,1858
Surface morphologyPlasma enhanced deposition of silicon carbonitride thin films and
property characterization, 16
Surface potential barrierElectron emission from hydrogenated and oxidized heteroepitaxial
diamond doped with boron, 780
Surface roughnessPreparation of AlN and LiNbO thin films on diamond substrates3
by sputtering method, 408
Subject Index for Volume 11 1995
Surface terminationOn the ion-sensitivity of H-terminated surface channel devices on
diamond, 651
Surface treatmentsDiamond deposition on hardmetal substrates after pre-treatment
with boron or sulfur compounds, 555
Surface-channelRF performance of surface channel diamond FETs with sub-micron
gate length, 382
Surfaces� 4Simulation of step patterns on natural diamond 111 surfaces, 145
SynchrotronImaging of the sensitivity in detector grade polycrystalline
diamonds using micro-focused X-ray beams, 418
Synchrotron radiationSynchrotron radiation X-ray analysis of boron-doped diamond
films grown by hot-filament assisted chemical vapor deposition,153
SynthesisSynthesis of nanocrystalline nitrogen-rich carbon nitride powders
at high pressure, 1885
Synthetic diamondModelling transition metals in diamond, 631
Synthetic diamond crystalPlanar defects and dislocations in HPHT as-grown diamond
crystals, 268
Ta filamentsInteractions of Ta-filaments during hot-filament CVD of BCN-
layers, 191
ta-CElectrochemical tests on the carbon protective layer of a hard
disk, 1409The enhancement of interconnected sp3 sites by chemical effects
during ta-C film growth, 1721
TEMField emission, structure, cathodoluminescence and formation
studies of carbon and Si�C�N nanotubes, 793
Temperature gradientŽ .Enhancement of 100 texture in diamond films grown using a
temperature gradient, 1403
TemperaturesSize and temperature dependence of nanodiamond�nanographite
transition related with surface stress, 234
Ternary BCNX-Ray absorption study of the bonding structure of BCNcompounds
enriched in carbon by CH ion assistance, 12954
Tetrahedral amorphous carbonStructure of nitrogenated amorphous carbon films from NEXAFS,
8Structure and properties of Si incorporated tetrahedral amorphous
carbon films prepared by hybrid filtered vacuum arc process, 198Is stress necessary to stabilise sp3 bonding in diamond-like
carbon?, 994Influence of the energy of sputtered carbon atoms on the
constitution of diamond-like carbon thin films, 1010
Textured diamond films
Ž .Enhancement of 100 texture in diamond films grown using atemperature gradient, 1403
Textured film² :Large area deposition of 100 -textured diamond films by a
60-kW microwave plasma CVD reactor, 596
TheoryPrecursor design in c-BN growth, 1300
Thermal annealingTime-dependent in-situ Raman observation of atomic hydrogen
etching on diamond-like carbon films, 262Effects of thermal annealing on amorphous carbon nitride films by
r.f. PECVD, 1633
Thermal conductivityThe large area deposition of diamond by the multi-cathode direct
Ž .current plasma assisted chemical vapor deposition DC PACVDmethod, 463
Thermal conductivity enhancement in cutting tools by chemicalvapor deposition diamond coating, 703
Thermal diffusivity in diamond, SiC N and BC N , 708x y x y
Thermal shockDiamond windows and domes: flexural strength and thermal shock,
218
Thermal-oxidationŽ .The oxidation of 100 textured diamond, 861
Thermochemical bevelingThermochemical beveling of CVD diamond films intended for
precision cutting and measurement applications, 1537
Thickness of the filmEffect of film thickness on the stress and adhesion of
diamond-like carbon coatings, 1643
Thin filmCarbon films obtained from a C fullerene ion beam, 96460DLC composite thin films by sputter deposition, 1119XPS studies on silicon carbonitride films prepared by sequential
implantation of nitrogen and carbon into silicon, 1676
Thin filmsCharacterisation of cold electron emitting carbonaceous films
containing Ni metallic nanocrystals, 809A new method for evaluating the scratch resistance of diamond-like
carbon films by the nano-scratch technique, 1454Evaluation of scratch resistance of diamond-like carbon films on
Ti alloy substrate by nano-scratch technique, 1505Threshold effect of admixtures of platinum on the electrochemical
activity of amorphous diamond-like carbon thin films, 1518
TiCEpitaxial interface of nanocrystalline TiC formed between
Cu-10Sn-15Ti alloy and diamond, 1366
Time-of-flight secondary ion mass spectrometryŽ .Deuterium-oxygen exchange on diamond 100 �a study by ERDA,
RBS and TOF-SIMS, 1385
TiNHigh-pressure sintering of cBN-TiN-Al composite for cutting tool
application, 280
Titanium carbideChemical vapor deposition diamond thin films growth on Ti6AL4V
using the Surfatron system, 550
Ž .Titanium carbide TiCMechanical properties and performance of magnetron-sputtered
Subject Index for Volume 111996
graded diamond-like carbon films with and without metaladditions, 1139
Tool coatingsMicrowave plasma chemical vapour deposition diamond nucleation
on ferrous substrates with Ti and Cr interlayers, 1617
Tool designDiamond tools for wire sawing metal components, 742
Transition metalsThe effect of the growth rate on the concentration of nitrogen and
transition metal impurities in HPHT synthetic diamonds, 204
Transmission electron diffractionCharacterization of boron carbon nitride films with a low
dielectric constant, 985
Transmission electron microscopyGrain boundaries in boron-doped CVD diamond films, 697Synthesis and tribological characteristics of nanocrystalline
diamond film using CH �H microwave plasmas, 8774 2Ž .Initial stages of GaN buffer layer growth on 0001 sapphire by
metalorganic chemical vapour deposition, 901Atomic and electronic structures of Si-included C cluster74
studied by HREM and molecular orbital calculations, 935Characterization of boron carbon nitride films with a low
dielectric constant, 985Reactivity of different tBN environments serving as reaction sites
in cBN film deposition, 1416Characterisation of smooth fine-grained diamond coatings on
titanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544
Ž .Transmission electron microscopy TEMHigh-resolution electron microscopy and electronic structures of
endohedral La@B N clusters, 94036 36Morphology and characterization of highly nitrogenated, aligned,
amorphous carbon nano-rods formed on an alumina template byECR-CVD, 1193
Transmission electron spectroscopyGrowth mechanism of Y-junction carbon nanotubes, 1349
TribiologyFriction coefficient measurements By LFM on DLC films as
function of sputtering deposition parameters, 1135
Tribological propertyTribological properties of diamond-like carbon films prepared by
mass-separated ion beam deposition, 1130
TribologyMechanical and tribological properties of CN films deposited byx
reactive pulsed laser ablation, 98Tribological behaviour and chemical characterisation of Si-free
and Si-containing carbon nitride coatings, 169DLC-based wear protection on magnetic storage media, 1781
Triple junctionField emission property of chemical vapor deposited diamond
overlayer films, 185
Tungsten carbideQuantitative comparison of adhesive toughness for various diamond
films on co-cemented tungsten carbide, 716Effect of substrate grain size and surface treatments on the
cutting properties of diamond coated Co-cemented tungstencarbide tools, 726
Application of diamond coatings onto small dental tools, 731
Turbostratic boron nitride
Reactivity of different tBN environments serving as reaction sitesin cBN film deposition, 1416
TwinsPlanar defects and dislocations in HPHT as-grown diamond
crystals, 268
Ultrananocrystalline diamondThe effect of nitrogen addition to Ar�CH plasmas on the growth,4
morphology and field emission of ultrananocrystalline diamond,43
UndopedField emission of polycrystalline diamond films grown by
microwave-plasma chemical vapor deposition. I. Effects ofsurface morphology of diamond, 1897
UniformityImaging of charge collection properties of a CVD diamond detector
using X-ray-induced current microscopy, 1472
UV imagingImaging deep UV light with diamond-based systems, 433
UV Raman spectroscopySynthesis and tribological characteristics of nanocrystalline
diamond film using CH �H microwave plasmas, 8774 2
UV rangeUltraviolet photoluminescence and its relation to atomic bonding
properties of hydrogenated amorphous carbon, 53Photoconductivity of highly oriented and randomly oriented
diamond films for the detection of fast UV laser pulses, 423Recent progresses of the BOLD investigation towards UV detectors
for the ESA Solar Orbiter, 427Multi-band structure of amorphous carbon luminescence, 1115
UV range illuminationOptical strength in UV region of amorphous carbon, 1106
UV-photodetectorsOptimised contact-structures for metal�diamond�metal UV-
detectors, 458
VacanciesStoichiometry and interface effects on the electronic and optical
properties of SiC nanoparticles, 1243
Vacancy complexesCharacterisation of electron irradiated boron-doped diamond, 681
Vacancy-interstitial recombinationRecombination-enhanced diffusion of self-interstitial atoms and
vacancy�interstitial recombination in diamond, 618
VUV ellipsometrySpectroscopic ellipsometry studies on BN films from IR to vacuum
UV energy region, 1281
Water treatmentElectrochemical advanced oxidation process for water treatment
using DiaChem� electrodes, 640
WC�C nanocomposite filmsMicrostructure and mechanical properties of WC�C nano-
composite films, 1747
WearDiamond cantilever with integrated tip for nanomachining, 667DLC-based wear protection on magnetic storage media, 1781Structural, mechanical and tribological properties of diamond-like
carbon films prepared under different substrate bias voltage,1837
Subject Index for Volume 11 1997
Wear particle generationCoating hardness effect on the critical number of friction cycles
for wear particle generation in carbon nitride coatings, 1817
Weibull analysisDiamond windows and domes: flexural strength and thermal shock,
218
WettabilityWettability and surface energy of oxidized and hydrogen
plasma-treated diamond films, 845
Wire sawingDiamond tools for wire sawing metal components, 742
X-rayDiamond membrane based structures for miniature X-ray sources,
1
X-Ray absorption near edge spectroscopyX-Ray absorption study of the bonding structure of BCN
compounds enriched in carbon by CH ion assistance, 12954
X-Ray absorption spectroscopyOn the bonding structure of hydrogenated carbon nitrides grown
by electron cyclotron resonance chemical vapour deposition:towards the synthesis of non-graphitic carbon nitrides, 1161
X-ray diffractionSynchrotron radiation X-ray analysis of boron-doped diamond
films grown by hot-filament assisted chemical vapor deposition,153
Deposition of an InN thin film by a r.f. plasma-assisted reactiveŽ .ion-beam sputtering deposition R-IBSD technique, 896
Properties of W�a-C nanometric multilayers produced byRF-pulsed magnetron sputtering, 1000
Characterisation of smooth fine-grained diamond coatings ontitanium alloy by TEM�EELS, Raman spectroscopy and X-raydiffraction, 1544
Detection of nanophase at the surface of HFCVD grown diamondfilms using surface enhanced Raman spectroscopic technique,1858
Ž .X-Ray diffraction XRDMicrostructure and stress in nano-crystalline diamond films
deposited by DC glow discharge CVD, 601
X-ray diffractometryCharacterization of boron doped CVD diamond films by Raman
spectroscopy and X-ray diffractometry, 1578
X-Ray photoelectron spectroscopyCharacterization of boron carbon nitride films with a low
dielectric constant, 985XPS characterization of the composition and bonding states of
elements in CN layers prepared by ion beam assisted deposition,x
1149Correlation between surface oxygen content and microstructure of
carbon nitride films, 1153
Ž .X-Ray photoelectron spectroscopy XPSVariation of nitrogen incorporation and bonding configuration of
carbon nitride films studied by X-ray photoelectron spectroscopyŽ . Ž .XPS and Fourier transform infrared FT-IR spectroscopicellipsometry, 1183
X-Ray reflectivityElastic constants and structural properties of nanometre-thick
diamond-like carbon films, 1062Hydrogen concentrations and mass density obtained by X-ray and
neutron reflectivity on hydrogenated amorphous carbon nitridethin films, 1188
X-ray-induced photocurrentImaging of charge collection properties of a CVD diamond detector
using X-ray-induced current microscopy, 1472
XPSThe effect of process parameters on the chemical structure of
pulsed laser deposited carbon nitride films, 1157Effect of plasma parameters on the structure of CN layersx
deposited by DC magnetron sputtering, 1200XPS studies on silicon carbonitride films prepared by sequential
implantation of nitrogen and carbon into silicon, 1676
Y-branched nanotubesFrom straight carbon nanotubes to Y-branched and coiled carbon
nanotubes, 1081
Y-junctionGrowth mechanism of Y-junction carbon nanotubes, 1349