The 2017 U.S. WORKSHOP on the PHYSICS and...

PROGRAMThe 2017 U.S. WORKSHOP on the PHYSICS

and CHEMISTRY of II–VI MATERIALSEmbassy Suites Chicago Downtown – Lakefront

October 30–November 2, 2017 Chicago, Illinois, USA

II-VI Detector Materials Special Sessions • IR • Superlattices: II-VI and III-As/Sb• UV • II-VI Based Solar Cells• Gamma-Ray • Alternatives to CdZnTe Substrates • X-Ray • HgCdTe Avalanche Photodiodes• Photovoltaic • X-Ray and Gamma-Ray Detectors • CdZnTe • Surfaces and Interfaces • HgCdTe • ZnO Materials and Devices• ZnO • Defects and Doping • ZnS • Surface Passivation• History of IR Detectors

Participating Organizations U.S. Army RDECOM CERDEC Night Vision & Electronic

Sensors Directorate U.S. Army Research Laboratory

U.S. Army SMDC U.S. Navy Electro-Optics Center

Penn State University Office of Naval Research

Air Force Research LaboratoryThe Minerals, Metals & Materials Society

University of Illinois at ChicagoEndorsed by

The American Physical Society

http://www.ii-viworkshop.org

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Promotional Partners

The 2017 II-VI Workshop would like to expresssincere thanks to our supporting organizationsand for the contributions from our very generouscorporate partners.

Gold Partners

Tabletop ExhibitorsEAG Laboratories

JX Nippon Mining & Metals

Pulse Instruments

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In Memory of Dr. Herbert Frank Schaake

Herbert F. Schaake (1939 – 2017)

Herb’s involvement with the “U.S. Workshop on thePhysics and Chemistry of Mercury CadmiumTelluride” dates back to the first Workshop held inOctober 1981. Thereafter he was a mainstay at the II-VI Workshop, as it subsequently became known, andnever missed the annual meeting. He served on theWorkshop committee, as the Proceedings Editor,Conference Co-Chair, reviewed papers and presentedhis research. Herb loved mentoring students, and volunteered to judge student papers at the II-VIWorkshop.

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2017 II-VI WORKSHOPIn the 36 years since the first MCT Workshop was

held in 1981, the technology of HgCdTe and relateddevices has significantly matured and broadened. The Workshop plays a vital role in this technologicalevolution. It provides the principal open forum for the exchange of information relative to theory andexperiment, synthesis, and analysis. It brings togetheruniversity, governmental, and industrial research in ahighly interactive manner.

• To encourage in-depth discussion and audienceparticipation, the Workshop combines conven-tional oral and poster presentations with sufficienttime allocated for questions and answers.

• To broaden exposure without sacrificing depth,invited speakers offer insight into areas relevant toII-VI materials.

• To ensure dissemination of results, submittedpeer-reviewed full-length papers will appear inthe Journal of Electronic Materials.

The Workshop will focus on fundamental researchon the major scientific problems in II-VI materials. Its primary goal is to promote an understanding of the relationship among the physical and chemicalproperties, and leverage this understanding into manu-facturing and performance improvements.

Informal discussions among participants are strongly encouraged and ample time for paper discus-sion and individual interactions has been scheduled.To foster these interactions, lunch will be provided onall three days of the Workshop, while a Wine andCheese Reception has been scheduled for Tuesdayevening.

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The 2017 II-VI Workshop brings together Industrial Leaders!

We are excited to announce this year’s invited speakers:

Welcome Remarks:Congressman Raja Krishnamoorthi

Keynote:Donald Reago, NVESD“New Efforts and Challenges for High PerformanceFPAs in the Army”

Jay Lewis, DARPA/MTO“Wafer Scale Infrared Detectors (WIRED) andRelated Programs at DARPA-MTO”

Industry Perspectives:James Beletic, Teledyne Imaging Sensors“An Update to Teledyne’s II-VI Technologies andImage Sensors, and the Science that they Enable”

David Billion-Lanfrey, Sofradir“30 years of MCT Excellence at Sofradir:Achievements and Future Challenges”

Leonard Chen, Raytheon Vision Systems“Sensing the Spectrum at RVS”

Chung Han, I3 Systems“Current Status of IR Detectors at I3 Systems”

Mike Scholten, DRS Technologies“HgCdTe – The Workhorse Material at DRS”

Invited:Jeff Beck, DRS Technologies“HgCdTe Avalanche Photodiodes for UV to IRPhoton Detection”

Lu Chen, Shanghai Institute of Technology“Recent Progress on HgCdTe by MBE of SITP”

Philippe Guyot-Sionnest, University of Chicago“Colloidal Quantum Dots of Infrared Photodetection”

Philip Klipstein, SCD“Topological Insulator Superlattices”

Madhu Reddy, Raytheon Visions Systems“MBE HgCdTe on Large-size Substrates”

Johan Rothman, LETI“Physics and Applications of HgCdTe APDs”

Chee Hing Tan, University of Sheffield“Development of Photon Counting using InAsAvalanche Photodiodes with Negligible Excess Noise”

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David Ting, NASA/JPL“Type-II Superlattices and Barrier Infrared Detectors”

Tutorials:Donald L. Lee, Teledyne Imaging Sensors“Fully-Depleted, Background Radiation-LimitedHgCdTe Detectors”

David R. Rhiger, Raytheon Vision Systems“Application of Ellipsometry to Infrared Materials”

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WORKSHOP CO-CHAIRSScott Johnson, Raytheon Vision SystemsSivalingam Sivananthan, University of Illinios at Chicago(Proceedings Editor)

PROGRAM COMMITTEETony Almeida, Army NVESDJose M. Arias, CAC/NVESDEnrico Belotti, Boston UniversityIshwara Bhat, Rensselaer Polytechnic Institute Arnold Burger, Fisk University Joseph Burns, Air Force Research LaboratoryWilliam Clark, Army Research OfficeRoger DeWames, Army NVESDNibir Dhar, DARPA/MTO

(Proceedings Co-Editor and Website Manager)Tim Gessert, National Renewable Energy LaboratoryCraig Hoffman, Naval Research Laboratory Ralph James, Brookhaven National Laboratory Pradip Mitra, DRS-RSTA, Inc.Thomas Myers, Texas State University – San MarcosJoe Pellegrino, Army NVESDEric Piquette, Teledyne Imaging Systems Marion Reine, Consultant, Infrared DetectorsHonnavalli Vydyanath, IRDT Solutions, Inc.Priyalal Wijewarnasuriya, Army Research Laboratory

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WORKSHOP COORDINATORSSamantha TolaPalisades Convention Management, Inc.212/460-8090 x 203212/460-5460 (fax)e-mail: [email protected]

Paola CaicedoSivananthan Laboratories, Inc.Phone: [email protected]

SPECIAL ISSUE EDITORIAL COORDINATOR Yesim AnterEPIR Technologies, [email protected]

WORKSHOP PARTICIPATING ORGANIZATIONSU.S. Army RDECOM CERDEC Night Vision & ElectronicSensors Directorate U.S. Army Research Laboratory U.S. Army SMDC U.S. Navy Electro-Optics CenterPenn State University Office of Naval Research Air Force Research LaboratoryThe Minerals, Metals & Materials SocietyUniversity of Illinois at Chicago

Endorsed byThe American Physical Society

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WORKSHOP PARTICULARS

LOCATION AND DATEThe 2017 II-VI Workshop will be held from October 30–November 2, at the Embassy Suites Chicago, DowntownLakefront, Chicago, Illinois.

TRAVEL ARRANGEMENTSThe Embassy Suites Chicago, Downtown Lakefront is locatedabout 17 miles from Chicago-O’Hare International Airport.Getting to and from the Airport:• Supershuttle – $29 one way per person• Taxi – Typically $50 (one person) • Rental Car – The distance from hotel is approximately 15 miles and the average drive time is 40 minutes

For additional map and direction information visit:http://embassysuites3.hilton.com/en/hotels/illinois/embassy-suites-chicago-downtown-magnificent-mile-CHIREES/maps-directions/index.html

WORKSHOP CHECK-INAttendees arriving on Monday, October 30, will be able to pick up their Workshop material at the II-VI Registration Desk located in the Chicago River Ballroom Foyer between 4:00 and 8:00pm. Attendees will also be able to pick up their Workshop material at the II-VI Registration Desk beginning at 7:00 ameach day.

REGISTRATION/INFORMATION DESKThe Registration/Information Desk will be located in the Chicago River Ballroom Foyer. For incoming messages, call the hotel at 312-836-5900 and ask to be transferred to the II-VIWorkshop Registration Desk.

LUNCHESLunches will be served in a section of the hotel on all three daysof the Workshop. To keep the Workshop on schedule, attendeesare encouraged to participate.

WINE AND CHEESE/TABLETOP DISPLAYSFollowing the presentations on Tuesday afternoon, a Wine andCheese Reception has been scheduled to help promote informaldiscussion and attendee interaction. The Wine and CheeseReception will be accompanied by several Tabletop Displaysfrom commercial vendors displaying products of interest to theII-VI community. The tabletops will be on view during theTuesday evening Reception as well as during the day onWednesday and Thursday in the Chicago River Ballroom Foyer.The poster session will also take place at the same time of thereception in a section of the Ballroom adjacent to the foyer.

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WORKSHOP MEETING ROOMSThe Workshop presentations as well as the Poster Session onTuesday will be held in the Chicago River Ballroom. The Wineand Cheese Reception, tabletop displays, and refreshmentbreaks will all take place in the Chicago River Ballroom Foyer.

BOOK OF EXTENDED ABSTRACTSA copy of the Book of Extended Abstracts will be distributed to all attendees at the Workshop. The Extended Abstracts willcontain summaries of all oral and poster papers presented at theWorkshop

WORKSHOP PROCEEDINGSThe II-VI Workshop papers will be published in a special issueof the Journal of Electronic Materials. The Proceedings willcontain full-length refereed versions of papers presented at theWorkshop. The cost of a copy of the electronic Proceedings isincluded in the fee. The Proceedings will be e-mailed to allattendees when available.

INSTRUCTIONS TO AUTHORS PLANNING TOSUBMIT FULL-LENGTH MANUSCRIPTSWe are asking all authors to submit their manuscripts to II-VIworkshop for online peer review using the link provided byJournal of Electronic Materials (JEM) http://www.editorial-manager.com/jems/. Please click on “submit manuscript” at thetop of the page. The online manuscript submission will close onNovember 13, 2017. II-VI Paper Submission• Authors (both oral and poster) who presented their work

at the Workshop can submit their manuscripts either by going tothe JEM ’s editorial web page at http://www.editorial manager.com/jems/ or via II-VI workshop’s website, http://www.ii-viworkshop.org/. The link to the manuscript submission can beaccessed by clicking on the Author’s Info link located under“About Workshop” link on the navigation banner on top of theII-VI Workshop’s website. Submissions via e-mail will not beaccepted.

• New users will need to create an account. During thesubmission process, authors will be asked to enter additionalinformation.

• The type of paper is “Special Issue” and the category is“2017 U.S. II-VI Workshop”.

• All submissions require an abstract of 200 words or less, akeywords line, a transfer of copyright form, and an electronicfile. Papers are reviewed by two qualified referees to determinesuitability. The editors’ decision to accept or reject a paper, basedon referees’ comments, is final. Please employ the followingguidelines when submitting a paper for review:

• Manuscripts, written in English, should be in a singlecolumn and formatted to fit on a 22 × 28-cm sheet. Should

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manuscripts contain too many grammatical errors or awkwardpassages, the papers will be returned without review. Assistanceof a professional proofreader (such as www. journalexperts.com) or qualified native speaker of English is recommendedunder these circumstances and may not only accelerate thereview process but also allow for an early publication date.

• The title of the article and abstract should be separatefrom the text. References, figure captions, and tables shouldalso be on separate pages.

• The works’ significance and its relation to the work ofothers should be detailed in the Introduction. Major assump-tions should be stated and procedures adequately outlined.

• References should be cited by Arabic numbers as super-scripts. Include the names of all authors, standard abbreviatedname of journal (see, for example, http://library. caltech.edu/reference/ abbreviations/) the volume number, initial page number, and year of publication in parenthesis. For books,include city of publication and publisher.

• Measurements should be given in metric units, includingcommon abbreviations for time such as h, min, and s.

• Figures may be published online in color with no charge,but color figures in the print version of the Journal carry amandatory fee.

To avoid delays, please:1. Define all acronyms upon first use, including in the

abstract, in this style: scanning electron microscopy (SEM).2. All micrographs must have scale markers. All plots must

have both axes labeled with the variable name (units).3. Contact author e-mail address and keywords must be

included on the abstract page.

For detailed guidelines on artwork and the copyright issueplease visit: http://www. springer.com/materials/optical+ %26+electronic+materials/journal/11664#

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PROGRAMMONDAY, OCTOBER 30, 2017

4:00– 8:00 pm Pre-Workshop Registration5:00– 7:45 pm Tutorials

TUESDAY, OCTOBER 31, 20177:00– 6:00 pm Registration 7:00– 9:30 am Continental Breakfast8:00– 8:15 am Welcoming Remarks: Congressman Raja

Krishnamoorthi8:15– 8:45 am Keynote Address: Dr. Donald Reago 8:45– 9:45 am 1: Industrial Overview I9:45–10:00 am BREAK10:00–11:15 am 2: Devices I11:15–12:00 pm 3: Solar Cells12:00–12:10 pm In Memory of Dr. Herbert Schaake12:10– 1:30 pm LUNCH1:30– 3:00 pm 4: Materials I3:00– 3:15 pm BREAK3:15– 5:45 pm 5: Materials II6:00– 7:30 pm Poster Sessions6:00– 7:30 pm TABLETOPS / WINE & CHEESE

RECEPTION

WEDNESDAY, NOVEMBER 1, 20177:30– 5:00 pm Registration 7:30– 9:30 am Continental Breakfast8:45– 9:15 am Keynote Address: Dr. Jay Lewis 9:15–10:15 am 6: Industrial Overview II10:15–10:30 am BREAK10:30–12:15 pm 7: Superlattice & Barrier Devices12:15– 1:30 pm LUNCH1:30– 3:00 pm 8: Wafer Scale Infrared Detectors and

Quantum Dot Materials and Devices I 3:00– 3:15 pm BREAK3:15– 5:45 pm 9: Wafer Scale Infrared Detectors and

Quantum Dot Materials and Devices II

THURSDAY, NOVEMBER 2, 20177:30– 2:00 pm Registration 7:30– 9:30 am Continental Breakfast8:15–10:45 am 10: Industrial Overview III / Devices II10:45–11:00 am BREAK11:00–12:15 pm 11: Devices III12:15– 1:30 pm LUNCH1:30– 2:45 pm 12: Modeling & Characterization I2:45– 3:00 pm BREAK3:00– 4:00 pm 13: Modeling & Characterization II4:00– 4:15 pm 14: Late-News Papers4:15– 4:30 pm WILLIAM E. SPICER AND

THOMAS N. CASSELMAN BEST STUDENT PAPERAWARD PRESENTATION

4:30– 4:45 pm Closing Remarks & Adjourn

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MONDAY, OCTOBER 30, 2017Chicago River Ballroom(4:00 – 8:00 pm)

Workshop Registration (4:00–8:00)

Tutorials (5:00–7:45)

“Application of Ellipsometry to Infrared Materials”(5:00–6:15)

David Rhiger, Raytheon Vision Systems, Goleta, CA, USAThis tutorial provides an introduction to the technique of ellip-sometry, with emphasis on practical applications to materials ofimportance for infrared detector fabrication. Basic concepts areexplained, and numerous examples are presented, showingmethods of interpreting the measurements. Cases include bothsingle-wavelength and spectroscopic modes.

BREAK (6:15–6:30)

“Fully-Depleted, Background (6:30–7:45)Radiation-Limited HgCdTe Detectors”Donald Lee, Teledyne Imaging Sensors, Camarillo, CA,USAThis tutorial will review the physics of operation, estimatedperformance, and potential benefits of fully-depleted HgCdTedetectors having current limited by background radiation ratherthan internal dark current. Topics that will be covered include:• Rationale for fully-depleted HgCdTe• Review of Rule07 conventional p/n detectors (Auger-1 limited)

• Fundamental dark current mechanisms for conven-tional diodes and the impact of Auger recombination

• Auger suppression – a simple model• Why Shockley-Read-Hall and not Auger lifetime setsthe ultimate limit of detector performance

• Background radiation-limited detector operation• Estimated performance of radiation-limited detectorsversus cutoff wavelength and temperature

• Methods for reducing background radiation• Potential impact of the fully-depleted detector designon reducing 1/f noise

• Review of blackbody radiation• Radiative contributions from various factors, includ-ing the substrate, metals, guard diodes and neutralabsorber regions

• Technical challenges

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TUESDAY, OCTOBER 31, 2017Chicago River Ballroom(7:00 am – 7:30 pm)

Registration (7:00–6:00)

Continental Breakfast (7:00–9:30)

Welcome Remarks (8:00–8:15)Dr. Sivalingam Sivananthan, II-VI Workshop Co-ChairUniversity of Illinois at Chicago, Chicago, IL, USACongressman Raja KrishnamoorthiU.S. House of Representatives, IL, USADr. Scott Johnson, II-VI Workshop Co-ChairRaytheon Visions Systems, Goleta, CA

KEYNOTE ADDRESS8:15 – 8:45 am

Dr. Donald ReagoDirector of Night Vision & Electronic Sensors Directorate, CERDEC, U.S. Army, Fort Belvoir, VA, USA“New Efforts and Challenges for High PerformanceFPAs in the Army”This talk address the U.S. Army CERDEC NVESD focuson developing focal plane arrays that have multi-functionsensing capability, combining the ability to image withthe ability to detection hostile fire events or data com-pression or even automatic target detection (ATR). Mucheffort is directed at improving the underlying read-outcircuits (ROICs) to increase well capacity, improvedynamic range and perform other on-chip processingcapabilities. As the ROICs become more complex, theuniformity of the absorbing material will become morecritical. Advances in the state of the art materials anddevice processing will be addressed as well as challengesfor the future.

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1: IndustrIal OvervIew I(8:45 – 9:45 am)

Chair: s. JohnsonRaytheon Vision Systems, Goleta, CA, USA

1.1Invited Paper: HgCdte: the workhorse (8:45)Material at drsM. Scholten

DRS Technologies, Dallas, TX, USA

1.2Invited Paper: Current status of Ir detectors (9:15)at i3systemS. Bae, Y.-H. Kim, B.-H. Kim, M.-S. Jeoung, H. Chung

i3system, Inc., Daejeon, South Korea

BreaK (9:45–10:00)

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2: devICes I(10:00 – 11:15 am)

Chair: C. HoffmanNaval Research Laboratory, Washington,DC, USA

2.1Invited Paper: uv to Infrared single (10:00)Photon detection with linear Mode HgCdte avalanche PhotodiodesJ. Beck, W. Sullivan III, P. Mitra

Leonardo DRS, Inc., Dallas, TX, USA X. Sun

NASA Goddard Space Flight Center, Greenbelt, MD,USA

B. HancockCalifornia Institute of Technology, Pasadena, CA,USA

2.2Invited Paper: Physics and applications of (10:30)HgCdte aPds J. Rothman, E. de Borniol, B. Delacourt, P. Blueut, J. Abergel, J.-A. Nicolas, F. Guellec, J.-P. Rostaing, G. Lasfargues

CEA-LETI, Grenoble, France A. Dumas

CNRS/LMD, Palaiseau, France

2.3low temperature Carrier transport (11:00)Measurements on low doped HgCdte J. Easley, J. Phillips

University of Michigan, Ann Arbor, MI, USAE. Arkun, M. Carmody

Teledyne Imaging Sensors, Camarillo, CA, USA

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3: sOlar Cells(11:15 am - 12:00 pm)

Chair: t. GessertGessert Consulting, LLC, Conifer, CO,USA

3.1 the effect of wettability on the surface (11:15)structure of te-Based Chalcopyrite layer Grown by the Closed-space sublimationA. Uruno, Y. Sakurakawa, M. Kobayashi

Waseda University, Tokyo, Japan

3.2 strategies to Obtain Heavily donor doped, (11:30)High-lifetime Cdte S. K. Swain, J. J. McCoy, K. G. Lynn

Washington State University, Pullman, WA, USA J. N. Duenow, S. W. Johnston, M. Amarasinghe, W. K. Metzger

National Renewable Energy Laboratory, Golden, CO,USA

3.3ultrafast low-Cost Growth of High-Quality (11:45)Cdte on thin MBe seed templates E. Colegrove, J. M. Burst, D. S. Albin, J. N. Duenow, H. R. Moutinho, W. K. Metzger

National Renewable Energy Laboratory (NREL),Golden, CO, USA

M. AmarasingheUniversity of Illinois at Chicago (UIC), Chicago, IL,USA

In Memory of dr. Herbert schaake (12:00–12:10)

lunCH (12:10–1:30)

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4: MaterIals I(1:30 – 3:00 pm)

Chair: t. almeida U.S. Army NVESD, Fort Belvoir, VA, USA

Co-Chair: J. ariasCACI / NVESD, Fort Belvoir, VA, USA

4.1 Invited Paper: recent Progress on HgCdte (1:30)by MBe of sItP L. Chen, X. Fu, W. Wang, C. Shen, S. Bu, X. Hu, Z. Ye, R. Ding, L. He

Shanghai Institute of Technical Physics, Shanghai,China

4.2MBe-Grown HgCdse Infrared Materials on (2:00)Gasb substrates W. Lei, I. Madni, Y. L. Ren, G. A. Umana-Membreno, L. Faraone

University of Western Australia, Crawley, Australia

4.3sub-Micronic-resolution Investigation of (2:15)Internal and external strain in HgCdte Photodiodes A. Tuaz, P. Ballet

University Grenoble Alpes, CEA-LETI, MINATECCampus, Grenoble, France

X. Biquard, F. RieutordUniversity Grenoble Alpes, CEA-INAC, MEM,Grenoble, France

4.4Invited Paper: Progress on large-size MBe (2:30)HgCdte wafers with low Process Induced defects M. Reddy

Raytheon Vision Systems, Goleta, CA, USA

BreaK (3:00–3:15)

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5: MaterIals II(3:15 – 5:45 pm)

Chair: t. almeidaU.S. Army NVESD, Ft. Belvoir, VA, USA

Co-Chair: J. ariasCACI/NVESD, Ft. Belvoir, VA, USA

5.1Invited Paper: topological Insulator superlattices

(3:15)P. Klipstein

SemiConductor Devices, Haifa, Israel

5.2Impurity ‘Hot spots’ in MBe HgCdte/CdZnte

(3:45)J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, J. M. Arias, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz,

U. S. Army RDECOM, CERDEC Night Vision andElectronic Sensors Directorate

A. WangEAG Laboratories

P. S. WijewarnasuriyaU. S. Army Research Laboratory

M. Reddy, J. Peterson, S. M. Johnson, B. Hanyaloglu, J. Bangs, D. D. Lofgreen

Raytheon Vision Systems

5.3Current limitations and desired (4:00)advancements of CdZnte substrates for HgCdte Growth by Molecular Beam epitaxy A. Yulius, M. Carmody, D. Edwall, J. Ellsworth, E. Arkun, B. Shojaei, R. Cottier, M. Zandian, E. Piquette, D. Lee


5.4CdZnte substrate surface Preparation (4:15)technology at aselsan, Inc. for MBe Growth of High-Quality HgCdte epilayers B. Asici, H. C. Eroglu, Y. Ergunt, A. San, S. Ozer

ASELSAN, Inc., Ankara, Turkey

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5.5relationships of twin and Precipitation (4:30)distribution with Growth solid-liquid Interface in Cd0.96Zn0.04te Crystals C. Xu, C. Zhou

Chinese Academy of Sciences, Shanghai, ChinaandUniversity of Chinese Academy of Sciences, Beijing,China

S. Sun, H. Yu, J. YangChinese Academy of Sciences, Shanghai, China

5.6 Material and Process development for (4:45)lw PIn HgCdte Photodiodes R. Kodama, S. Velicu

EPIR Inc., Bolingbrook, IL, USAJ. H. Park, J. Zhao, F. Aqariden

EPIR Technologies Inc., Bolingbrook, IL, USA P. Wijewarnasuriya

US Army Research Laboratory, Adelphi, MD, USA

5.7Investigating the electron-Phonon Coupling (5:00)of MBe-Grown Hg1-xCdxse semiconductor alloys F. C. Peiris, M. V. Lewis, K. Vanderhoof

Kenyon College, Gambier, OH, USAG. Brill

US Army Research Laboratory, Adelphi, MD, USAK. Doyle

Raytheon Vision Systems, Goleta, CA, USAT. H. Myers

Texas State University, San Marcos, TX, USA

5.8development of nanostructred antirefelction (5:15)Coatings for eO/Ir Optical systems G. G. Pethuraja, J. W. Zeller, R. E. Welser, A. K. Sood

Magnolia Optical Techinolgies, Inc., Wolburn, MA,USA and Albany, NY, USA

H. Efstathiadis, P. HaldarSUNY Polytechnic Institute, Albany, NY, USA

P. S. WijewarnasuriyaUS Army Research Laboratory, Adelphi, MD, USA

N. K. DharUS Army Night Vision & Electronic SensorsDirectorate, Ft. Belvoir, VA, USA

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5.9effect of Graphene Buffer layer on the (5:30)van der waals epitaxy of Cdte thin Films D. Mohanty, Z. Lu, X. Sun, S. Zhang, M. Washington, G.-C. Wang, T.-M. Lu, I. B. Bhat

Rensselaer Polytechnic Institute, Troy, NY, USA

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POster sessIOns(6:00 – 7:30 pm)

P.1Grain-size Growth and efficient Iron diffusion inPolycrystalline Zns under Hot Isostatic Pressing O. Gafarov, V. Fedorov, S. Mirov

University of Alabama at Birmingham, Birmingham,AL, USA

P.2ultrasonic treatment effects on Cus1.8–Cdsestructures O. Olikh, B. Polonsky

Taras Shevchenko National University of Kyiv, Kyiv,Ukraine

P.3Inductively Coupled Plasma-Induced electricaldamage on HgCdte etched surface at CryogenictemperatureL. F. Liu, Y. Y. Chen

Chinese Academy of Sciences, Shanghai, ChinaandUniversity of Chinese Academy of Sciences, Beijing,China

Z. H. Ye, X. N. Hu, R. J. Ding, L. HeChinese Academy of Sciences, Shanghai, China

P.4detailed Optoelectronic Characterization of wide-Bandgap Hg3se2I2 semiconductor for Hardradiation detection S. Das, J.-I. Kim, J. A. Peters, Z. Liu, Y. He, O. Kontsevoi, M. G. Kanatzidis, B. W. Wessels

Northwestern University, Evanstron, IL, USA

P.5COts-Based small-Form-Factor Infrared Cameraswith soft-sealed IdCas H. Vemuri, B. Benapfl, C. Grein, J. L. Miller, S. Sivananthan

Episensors, Inc., Bolingbrook, IL, USA

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P.6a Compact solid-state uv Flame-sensing systemBased on wide-Gap II-vI thin-Film Materials Y. Liu, L.-X. Pang, J. Liang, M.-K. Cheng, J. J. Liang, J. S. Chen, Y.-H. Lai, I.-K. Sou

Hong Kong University of Science and Technology,Hong Kong, China

P.7 Colloidal Hgte Photovoltaic detector for 3-5 µm M. Ackerman

University of Chicago, Chicago, IL, USA P. Guyot-Sionnest

James Francki Institute, Chicago, IL, USA

P.8electron Beam Induced Current study of vlwIrHgCdte Photodiodes A. Yèche, F. Boulard, O. Gravrand

University Grenoble Alpes, CEA-LETI, Grenoble,France

P.9low-temperature Carrier-transport Measurementson low-doped HgCdte J. Easley, J. Philips

University of Michigan, Ann Arbor, MI, USA E. Arkun, M. Carmody


P.10effect of Graphene Buffer layer on the van derwaals epitaxy of Cdte thin Films D. Mohanty, Z. Lu, X. Sun, S. Zhang, M. Washington,G.-C. Wang, T.-M. Lu, I. B. Bhat

Rensselaer Polytechnic Institute, Troy, NY, USA

P.11absorption Characteristics of very-long-wavelength Infrared type-III superlatticesP. Man, Y. Chang, C. H. Grein, S. Sivananthan

University of Illinois at Chicago, Chicago, IL, USA F. Aqariden, Jun Zhao, N. Mahendranathan

EPIR Technologies, Bolingbrook, IL, USA

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P.12Mid-wave Infrared Photodetectors Based on BlackPhosphorous arsenic alloys M. Amani, J. Bullock, A. Javey

University of California, Berkeley, Berkeley, CA, USAandLawrence Berkeley National Laboratory, Berkeley,CA, USA

P.13numerical Modeling of the Optical Performance ofInfrared Photodetectors with dark-Current Controlstructures A. Glasmann, T. Hubbard, E. Bellotti

Boston University, Boston, MA, USA

P.14Micro-Opto-electro-Mechanical (MOeMs) MwIrFabry-Perot Filters for Hyperspectral Imaging D. Admassu, T. Durowade, S. Sivananthan

University of Illinois at Chicago, Chicago, IL, USA W. Gao, S. Velicu

EPIR Technologies, Inc., Bolingbrook, IL, USA

P.15numerical Modeling of three-dimensionalMicrolenses for Ir Focal-Plane arrays T. Hubbard, B. Appleton, A. Glasmann, E. Bellotti


P.16demonstration of dual-Band Mid-wavelegthHgCdte detector Operating in room temperatureP. Martyniuk, P. Madejczyk, J. Rutkowski

Military University of Technology, Warsaw, Poland W. Gawron

Military University of Technology, Warsaw, Poland andVIGO System S.A., Ożarów Mazowiecki, Poland

reCePtIOn / taBletOPs (6:00–7:30)

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wednesday, nOveMBer 1, 2017Chicago river Ballroom

(7:30 am – 5:45 pm)

registration (7:30–5:00)


KeynOte address (8:45 – 9:15 am)

dr. Jay lewisDeputy Director, DARPA Microsystems TechnologyOffice (MTO), Fairfax, VA,USA“Wafer Scale Infrared Detectors (WIRED) and relatedprograms at DARPA-MTO”This talk will be an overview of the DARPA WIRED program, and set the stage for a series of contributed presentations based on that work. In addition, we willdiscuss other EO/IR programs at DARPA, including theReconfigurable Imaging (ReImagine) program.


6: IndustrIal OvervIew II(9:15 – 10:15 am)

Chair: s. sivananthanUniversity of Illinois at Chicago, Chicago,IL, USA

6.1Invited Paper: an update on teledyne’s (9:15)II-vI technologies and Image sensors, and the science that they enable J. Beletic


6.2Invited Paper: 30 years of MCt excellence (9:45)at sofradir: achievements and Future Challenges D. Billon-Lanfrey, L Rubaldo, A. Brunner, N. Péré-Laperne, J. Berthoz, T. Grenouilloux, A. Kerlain, A. Nedelcu, V. Destefanis, R. Taalat, B. Brosse

SOFRADIR, Palaiseau, France P. Guinedor

SOFRADIR, Palaiseau, France andIMEP-LAHC, MINATEC-INPG, Grenoble, France

C. DurnezSOFRADIR, Palaiseau, France andUniversité de Toulouse, Toulouse, France

O. Gravrand, J. RothmanCEA-LETI, MINATEC Campus, Grenoble, France

BreaK (10:15–10:30)

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7: suPerlattICe & BarrIer devICes(10:30 am – 12:15 pm)

Chair: e. PiquetteTeledyne, Camarillo, CA, USA

Co-Chair: t. MyersTexas State University- San Marcos, San Marcos, TX, USA

7.1Invited Paper: type-II superlattices and (10:30)Barrier Infrared detectors D. Z. Ting, A. Soibel, A. Khoshakhlagh, S. D. Gunapala

California Institute of Technology, Pasadena, CA,USA

7.2type II superlattice Infrared detector (11:00)technology at sCd P.C. Klipstein, E. Avnon, Y. Benny, R. Fraenkel, S. Gliksman, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, I. Marderfeld, Y. Nechemya, M. Nitzani, N. Rappaport, I. Shtrichman, N. Snapi, and E. Weiss

SemiConductor Devices, Haifa, Israel

7.3HgCdte nBn Photodetector with δ-doped Barrier

(11:15)ND Akhavan, G. Umana-Membreno, R Gu, J. Antoszewski, L. Faraone

University of Western Australia, Crawley, Australia

7.4absorption Characteristics of very-long- (11:30)wavelength Infrared type-III superlattices P. Man, Y. Chang, C. H. Grein, S. Sivananthan

University of Illinois at Chicago, Chicago, IL, USA F. Aqariden, J. Zhao, N. Mahendranathan


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7.5Inductively Coupled Plasma Hydrogenation (11:45)of lwIr type-II superlattices P. Boieriu, C. Grein, C. Buurma, J. Feldman, R. Pimpinella, A. Ciani

Sivananthan Laboratories, Inc., Bolingbrook, IL, USAA. Soibel, D. Z. Ting

California Institute of Technology, Pasadena,CA,USA

7.6dFt Calculations of the Formation energy (12:00)and valence Band edge on sb disordered andClustered lwIr Inas/Inassb type-II superlattices C. Buurma, A. Ciani, C. Grein

Sivananthan Laboratories, Bolingbrook, IL, USA

lunCH (12:15–1:30)

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8: waFer sCale InFrared deteCtOrs and QuantuM

dOt MaterIals and devICes I (1:30 – 3:00 pm)

Chair: J. lewisDARPA, Fairfax, VA, USA

8.1Invited Paper: Colloidal Quantum dots for (1:30)Infrared Photodetection P. Guyot-Sionnest

University of Chicago, Chicago, IL, USA

8.2Colloidal Quantum-dot Infrared Focal Plane (2:00)arrays and Photodetectors S. Keuleyan, D. M. N. M. Dissanayake, C. Weber, C. Teters, A. S. Huntington, P. Hugger, A. Colbert,J. Antolin, G. M. Williams

Voxtel, Inc., Beaverton, OR, USA

8.3Pbs Colloidal Quantum-dot device (2:15)Performance and Modeling E. Klem, D. Temple

RTI International, Research Triangle Park, NC, USA A. I. D’Souza, E. Robinson, C. Li

DRS Network & Imaging Systems, Cypress, CA, USAP. Wijewarnasuriya

US Army Research Labs., Adelphi, MD, USAW. Palosz, S. Trivedi

Brimrose Corporation, Sparks, MD, USAE. Bellotti, T. Hubbard, B. Lukose


8.4simulation of Charge transport in lead (2:30)sulfide nanocrystals B. Lukose, S. Dominici, A. Kyrtsos, E. Bellotti


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8.5Materials and electrical-transport Properties (2:45)of sensitized Pbse Films for Ir detectors M.-H. Jang, M. C. Gupta

University of Virginia, Charlottesville, VA, USAS.-S. Yoo, M. T. Kramer

Northrop Grumman Corporation, Rolling Meadows,IL, USA

N. K. DharUS Army RDECOM CERDEC Night Vision andElectronic Sensors Directorate, Fort Belvoir, VA,USA

BreaK (3:00–3:15)

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9: waFer sCale InFrared deteCtOrs and QuantuM

dOt MaterIals and devICes II(3:15 – 5:45 pm)

Chair: J. BurnsAir Force Research Laboratory,AFRL/RXAN, Wright-Patterson AFB, OH,USA

9.1Pbse Fim deposition using Flow-limited (3:15)Field-Injection electrostatic spraying R. Kustra, R. Vesto, H. Choi, K. Kim

University of Illinois at Urbana-Champaign, Urbana,IL, USA

9.2a Multiscale Materials-to-systems Model for (3:30)Pbse Mid-Ir Photodetectors S. Ganguly, Y. Tan, A. W. Ghosh

University of Virginia, Charlottesville, VA, USAJ. Lee, P. Martin, S.-S. Yoo

Northrop Grumman Corp., Rolling Meadows, IL, USA

9.3High-Operating-temperature MwIr (3:45)Photodetector development using PolycrystallinePbse technology S.-S. Yoo, J. Lee, C. Kauffman, T. K. Steinbach, P. Martin, J. Tucek

Northrop Grumman Missions Systems, RollingMeadows, IL, USA

S. AnUniversity of Illinois at Chicago, Chicago IL, USA

9.4development of low-Cost uncooled Iv-vI / (4:00)II-vI Heterojunction MwIr detector forMonolithically Integrated Focal Plan array Z. Shi, L. McDowell, Q. Phan, B. Weng, X. Shi

University of Oklahoma, Norman, OK, USAJ. Qiu, Z. Cai

University of Oklahoma, Norman, OK, USAandNanolight, Inc.

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9.5disordered Inas(sb) MwIr detectors: (4:15)Growth and device schemes for direct Integration with rOICs B.-M. Nguyen, Y. Cao, A. J. Williams, J. R. Jenkins, D. E. Carrasco, R. Li, S. Bui, B. Z. Nosho, T. J. de Lyon,R. D. Rajavel

HRL Laboratories, LLC, Malibu, CA, USA

9.6Modeling of Grain Boundaries in Inas (4:30)A. Murat, E. Bellotti

Boston University, Boston, MA, USA B.-M. Nguyen, R. D. Rajavel

HRL Laboratories, Malibu, CA, USA

9.7Modeling electronic Properties of defects (4:45)and dopants in III-as Materials J. Dadras, C. Ratsch

University of California, Los Angeles, Los Angeles,CA, USA

B.-M. NguyenHRL Laboratories, Malibu, CA, USA

9.8 ultrafast, uncooled long-wave Infrared (5:00)detection Based on Mono-layer Graphene D. Chanda, M. Leuenberger

University of Central Florida, Orlando, FL, USA

9.9enhanced Broadband absorption in (5:15)Graphene using a nanoantenna-Integrated Optical Cavity V. R. Shrestha, Y. Gao, K. B. Crozier

University of Melbourne, Victoria, AustraliaM. Amani, A. Javey


9.10 Mid-wave Infrared Photodetectors Based (5:30) on Black Phosphorous arsenic alloys M. Amani, J. Bullock, A. Javey


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thursday, november 2Chicago river Ballroom

(7:30 am – 4:45 pm)

registration (7:30–2:00)


10: IndustrIal OvervIew III / devICes II

(8:15 – 10:45 am)

Chair: n. dharU.S. Army NVESD, Ft. Belvoir, VA, USA

Co-Chair: e. Bellotti Boston University, Boston, MA, USA

10.1Invited Paper: sensing the spectrum at rvs (8:15) L. Chen

Raytheon Vision Systems, Goleta, CA, USA

10.2Invited Paper: room-temperature Infrared (8:45)Focal-Plane-array Performance M. A. Kinch

Consultant, Dallas, TX, USA

10.3MwIr MBe HgCdte/CdZnte HdvIP Focal (9:15)Plane arrays Operating at elevated temperatures C. Schaake, R. Strong, L. Robertson, S. Ajmera, M. Kinch

Leonardo DRS, Dallas, TX, USA J. Zhao, F. Aqariden


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10.4development of very-thin High-Performance (9:30)HgCdte devices by Inserting diffractive elements P. S. Wijewarnasuriya, K.-K. Choi, J. Schuster,G. Meissner, K. Olver, Y. Chen, B. Tennant, E. DeCuir Jr., J. Pattison

U.S. Army Research Laboratory, Adelphi, MD, USAN. K. Dhar, M. Jaime-Vasquez, R. Jacobs, J. Markunas,D. Benson

U.S. Army RDECOM, CERDEC Night Vision andElectronic Sensors Directorate, Fort Belvoir, VA,USA

10.5rts noise studies on new HgCdte MwIr (9:45) detectors at sofradir A. Brunner, L. Rubaldo, P. Guinedor, A. Kerlain, V. Destefanis, N. Péré-Laperne, D. Sam-Giao, L. Dargent, E. Carrere, C. Cassillo, F. Dupont

Sofradir, Veurey-Voroize, France

10.6 a HgCdte-Based Photodetector for (10:00)low-Flux spectroscopic lunar MeasurementsW. Gao, S. Velicu

EPIR, Inc., Bolingbrook, IL, USA H. Vemuri, B. Benapfl

EpiSensors, Bolingbrook, IL, USA

10.7short-wave Infrared HgCdte electron (10:15)avalanche Photodiodes for Gated-viewing A. Sieck, M. Benecke, D. Eich, R. Oelmaier, J. Wendler,H. Figgemeier

AIM Infrarot-Module GmbH, Heilbronn, Germany

10.8shockley-read-Hall lifetime study and (10:30)Implication in HgCdte Photodiodes for Ir detection O. Gravrand, J. Rothman, B. Delacourt, F. Boulard, C. Lobre, P. Ballet, J. L. Santaillé, D. Brellier

CEA-LETI-MINATEC, Grenoble, France N. Péré-Laperne, V. Destefanis, A. Kerlain

Sofradir, Palaiseau, France

BreaK (10:45–11:00)

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11: devICes III(11:00 am – 12:15 pm)

Chair: P. MitraDRS Technologies, C4ISR TX, Dallas, TX,USA

Co-Chair: M. reineConsultant, Infrared Detectors,Cambridge, MA, USA

11.1Invited Paper: development of Photon (11:00)Counting detectors using Inas avalanchePhotodiodes with negligible excess noise C. H. Tan, J. S. Ng, X. Zhou, J. David, S. Zhang, A. Krysa

University of Sheffield-North Campus, Sheffield, UK

11.2numerical Modeling of the Optical (11:30)Performance of Infrared Photodetectors with dark Current Control structures A. Glasmann, T. Hubbard, E. Bellotti


11.3Micro-Opto-electro-Mechanical (MOeMs) (11:45)MwIr Fabry-Perot Filters for HyperspectralImaging D. Admassu, T. Durowade, S. Sivananthan

University of Illinois at Chicago, Chicago, IL, USA W. Gao, S. Velicu

EPIR Technologies Inc., Bolingbrook, IL, USA

11.4Origin of 1/f noise in electronic devices (12:00)P. Norton, N. Blackwell, P. Maloney

Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA

lunCH (12:15–1:30)

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12: MOdelInG & CHaraCterIZatIOn I(1:30 – 2:45 PM)

Chair: P. wijewarnasuriyaU.S. Army Research Laboratory, Adelphi,MD, USA

Co-Chair: w. ClarkU.S. Army Research Office, Durham, NC,USA

12.1Physics-Based design of depleted HgCdte (1:30)Infrared detectors J. Schuster

US Army Research Laboratory, Adelphi, MD, USAandBoston University, Boston, MA, USA

E. A. DeCuir Jr., P. S. WijewarnasuriyaUS Army Research Laboratory, Adelphi, MD, USA

12.2non-Monochromatic 3d Optical simulation (1:45)of HgCdte Focal Plane arraysM. Vallone, A. Palmieri, M. Calciati, F. Cappelluti, G. Ghione

Politecnico di Torino, Torino, ItalyF. Bertazzi, M. Goano

Politecnico di Torino, Torino, ItalyandCNR-IEIIT, Torino, Italy

M. Bahl, E. Heller, R. ScarmozzinoSynopsys Inc., Ossining, NY, USA

S. Hanna, H. FiggemeierAIM Infrarot-Module GmbH, Heilbronn, Germany

12.3numerical Modeling of three-dimensional (2:00)Microlenses for Ir Focal Plane arrays T. Hubbard, A. Glasmann, E. Bellotti


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12.4Improving the antimony distribution in (2:15)Ga‐Free type‐II superlattice A. J. Ciani

Sivananthan Laboratories, Bolingbrook, IL, USA C. H. Grein

University of Illinois at Chicago, Chicago, IL, USA

12.5High-resolution study of defects and (2:30)Interfaces in HgCdte-Based lwIr devices architectures R. F. Klie

EPIR Inc., Bolingbrook, IL, USA andUniversity of Illinois at Chicago, Chicago, IL, USA

J. GuoUniversity of Illinois at Chicago, Chicago, IL, USA

R. Kodama, S. VelicuEPIR Inc., Bolingbrook, IL, USA

BreaK (2:45–3:00)

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13: MOdelInG & CHaraCterIZatIOn II(3:00 – 4:00 pm)

Chair: P. wijewarnasuriyaArmy Research Laboratory, Adelphi, MD,USA

Co-Chair: w. ClarkU.S. Army Research Office, Durham, NC,USA

13.1Predicting Point-defect Formation energies (3:00)from statistical learning of Bulk Properties J. B. Varley, A. Samanta, V. Lordi

Lawrence Livermore National Laboratory, Livermore,CA, USA

13.2High-Mobility long-wave HgCdte with low (3:15)Indium doping levels A. E. Brown, J. D Benson

US Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA

J. Ellsworth, M. Carmody, D. LeeTeledyne Scientific and Imaging, Camarillo, CA, USA

J. AriasUS Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USAandCACI Technologies, Arlington, VA, USA

13.3Fully automated Measurement and analysis (3:30)of reciprocal space MapsM. Hawkridge

PANalytical. Westborough, MA, USA L. Grieger, J. F. Woitok

PANalytical B.V., Almelo, The NetherlandsG. Tye

PANalytical Research Centre, Brighton, UK

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13.4strain analysis of Cdte on Insb epitaxial (3:45)structures using X-ray-Based reciprocal space Measurements and dynamical diffractionsimulations M. Liao, M. Goorsky

University of California, Los Angeles, CA, USAC. Campbell, C.-Y. Tsai, Y.-H. Zhang

Arizona State University, Tempe, AZ, USA

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14: late-news PaPers(4:00 – 4:15 pm)

14.1Correlative Property and structure (4:00)Characterization of Individual extended defects in solar Cells Q. Chen, S. Zhang, Y. Zhang

University of North Carolina at Charlotte, Charlotte,NC, USA

B. McKeon, D. SmithArizona State University, Tempe, AZ, USA

C.-K. HuUniversity of North Carolina at Charlotte, Charlotte,NC, USAandWuhan University of Technology, Wuhan, China

T. H. GfroererDavidson College, Davidson, NC, USA

M. W. WanlassNational Renewable Energy Laboratory, Golden, CO,USA

wIllIaM e. sPICerand

tHOMas n. CasselManBest student Paper award

(4:15 – 4:30 pm)

ClOsInG reMarKs (4:30–4:45)

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nOtes

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nOtes

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