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1SMEECE 488 – Set 1: Introduction and Background
EECE488: Analog CMOS Integrated Circuit Design
Introduction and Background
Shahriar Mirabbasi
Department of Electrical and Computer EngineeringUniversity of British Columbia
Technical contributions of Pedram Lajevardi in revising the slides is greatly acknowledged.
2SMEECE 488 – Set 1: Introduction and Background
Marking
Assignments 10% (4 to 6)
Midterm 15%
Project 25%
Final Exam 50%
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3SMEECE 488 – Set 1: Introduction and Background
References
• Main reference: Lecture notes• Recommended Textbook:� Behzad Razavi, Design of Analog CMOS Integrated Circuits, McGraw-
Hill, 2001• Some other useful references:� T. Chan Carusone, D. Johns and K. Martin, Analog Integrated Circuit
Design, 2nd Edition, John Wiley, 2011� P. Gray, P. Hurst, S. Lewis, and R. Meyer, Analysis and Design of
Analog Integrated Circuits, 5th Edition, John Wiley, 2009� D. Holberg and P. Allen, CMOS Analog Circuit Design, 3rd Edition,
Oxford University Press, 2011� R. Jacob Baker, CMOS Circuit Design, Layout, and Simulation, 3rd
Edition, Wiley-IEEE Press, 2010� A. Sedra and K.C. Smith, Microelectronic Circuits, 5th or 6th Edition,
Oxford University Press, 2004, 2009� Journal and conference articles including IEEE Journal of Solid-State
Circuits and International Solid-State Circuits Conference
4SMEECE 488 – Set 1: Introduction and Background
Fun to Check
William F. Brinkman, Douglas E. Haggan, and William W. Troutman,“A History of the Invention of the Transistor and Where It Will LeadUs,” IEEE Journal of Solid-State Circuits, volume 32, no. 12,December 1997, pp. 1858-1865
http://download.intel.com/newsroom/kits/22nm/pdfs/Intel_Transistor_Backgrounder.pdf
Boris Murmann, “Digitally Assisted Analog Circuits,” IEEE Micro, vol.26, no. 2, pp. 38-47, Mar. 2006.
Interesting CAD Tools by Dr. Michael Perrott and his group:
http://www.cppsim.com/download_hspice_tools.html
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5SMEECE 488 – Set 1: Introduction and Background
Why Analog?
• Most of the physical signals are analog in nature!
• Although digital is great we need an analog interface to convertphysical signals from analog to digital
• Also, in some application after processing the signals in digital domain,we need to convert them back to analog.
• Thus in many applications analog and mixed-signal circuits are theperformance bottlenecks.
• Also with constant process improvements the boundary of betweenhigh-speed digital and analog circuits becomes more and more fuzzy!
• That is why analog and mixed-signal designers are still and hopefullywill be in demand for the foreseeable future.
6SMEECE 488 – Set 1: Introduction and Background
Typical Real World System
• Example:
DSP
Dat
a C
onve
rter
AFE
Filter ADC DSPG
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7SM
Intel’s Tick-Tock Model
EECE 488 – Set 1: Introduction and Background
Tick (process technology advancement), Tock (new microarchitecture)
http://www.intel.com/content/www/us/en/silicon-innovations/intel-tick-tock-model-general.html
8SM
Intel 45 nm Process
EECE 488 – Set 1: Introduction and Background
http://blog.oregonlive.com/siliconforest/2007/11/intel11.pdf
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9SMEECE 488 – Set 1: Introduction and Background
Background
1. Suggested Reading
2. Structure of MOS Transistors
3. Threshold Voltage
4. Long-Channel Current Equations
5. Regions of Operation
6. Transconductance
7. Second-Order Effects
8. Short-Channel Effects
9. MOS Layout
10.Device Capacitances
11.Small-signal Models
12.Circuit Impedance
13.Equivalent Transconductance
10SMEECE 488 – Set 1: Introduction and Background
Suggested Reading
• Most of the material in this set are based on
Chapters 2, 16, and 17 of the Razavi’s book: Design of AnalogCMOS Integrated Circuits
Many of the figures in this set are from © Design of Analog CMOS Integrated Circuits,McGraw-Hill, 2001, unless otherwise noted.
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11SMEECE 488 – Set 1: Introduction and Background
Transistor
• Transistor stands for …
• Transistor are semiconductor devices that can be classified as
– Bipolar Junction Transistors (BJTs)
– Field Effect Transistors (FETs)
• Depletion-Mode FETs or (e.g., JFETs)
• Enhancement-Mode FETs (e.g., MOSFETs)
12SMEECE 488 – Set 1: Introduction and Background
Simplistic Model
• MOS transistors have three terminals: Gate, Source, and Drain
• The voltage of the Gate terminal determines the type of connectionbetween Source and Drain (Short or Open).
• Thus, MOS devices behave like a switch
Device is OND is shorted to S
Device is OFFD & S are disconnected
VG low
Device is OFFD & S are disconnected
Device is OND is shorted to S
VG high
PMOSNMOS
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13SMEECE 488 – Set 1: Introduction and Background
Physical Structure - 1
• Source and Drain terminals are identical except that Source providescharge carriers, and Drain receives them.
• MOS devices have in fact 4 terminals:– Source, Drain, Gate, Substrate (bulk)
© Microelectronic Circuits, 2004 Oxford University Press
14SMEECE 488 – Set 1: Introduction and Background
Physical Structure - 2
LD: Due to Side Diffusion
Poly-silicon used instead of Metalfor fabrication reasons
• Actual length of the channel (Leff) is less than the length of gate
• Charge Carriers are electrons in NMOS devices, and holes inPMOS devices.
• Electrons have a higher mobility than holes
• So, NMOS devices are faster than PMOS devices
• We rather to have a p-type substrate?!
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15SMEECE 488 – Set 1: Introduction and Background
Physical Structure - 3
• N-wells allow both NMOS and PMOS devices to reside on thesame piece of die.
• As mentioned, NMOS and PMOS devices have 4 terminals:
Source, Drain, Gate, Substrate (bulk)
• In order to have all PN junctions reverse-biased, substrate ofNMOS is connected to the most negative voltage, and substrateof PMOS is connected to the most positive voltage.
16SMEECE 488 – Set 1: Introduction and Background
Physical Structure - 4
• MOS transistor Symbols:
• In NMOS Devices:
Current flows from Drain to Source
• In PMOS Devices:
Current flows from Source to Drain
• Current flow determines which terminal is Source and which oneis Drain. Equivalently, source and drain can be determined basedon their relative voltages.
DrainSource electron →
DrainSource hole→
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17SMEECE 488 – Set 1: Introduction and Background
Threshold Voltage - 1
(a) An NMOS driven by a gate voltage, (b) formation of depletion region, (c) onset of inversion,and (d) channel formation
• Consider an NMOS: as the gate voltage is increased, the surfaceunder the gate is depleted. If the gate voltage increases more,free electrons appear under the gate and a conductive channel isformed.
• As mentioned before, in NMOS devices charge carriers in thechannel under the gate are electrons.
18SMEECE 488 – Set 1: Introduction and Background
Threshold Voltage - 2
• Intuitively, the threshold voltage is the gate voltage that forces theinterface (surface under the gate) to be completely depleted of charge (inNMOS the interface is as much n-type as the substrate is p-type)
• Increasing gate voltage above this threshold (denoted by VTH or Vt)induces an inversion layer (conductive channel) under the gate.
© Microelectronic Circuits, 2004 Oxford University Press
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19SMEECE 488 – Set 1: Introduction and Background
Threshold Voltage - 3
Analytically:
ox
dep
FMSTH C
QV +Φ⋅+Φ= 2
Where:
substrate silicon the and gate npolysilico the
of functions workthe between difference the
Potential in-Built
=
Φ−Φ==Φ SilicongateMS
⋅⋅==Φ
i
sub
F n
N
q
TK lnpotential)atic (electrost Function Work
subFsidepNq Q ⋅Φ⋅⋅⋅== ε4region depletion the in Charge
20SMEECE 488 – Set 1: Introduction and Background
Threshold Voltage - 4
• In practice, the “native” threshold value may not be suited forcircuit design, e.g., VTH may be zero and the device may be on forany positive gate voltage.
• Typically threshold voltage is adjusted by ion implantation into thechannel surface (doping P-type material will increase VTH ofNMOS devices).
• When VDS is zero, there is no horizontal electric field present in thechannel, and therefore no current between the source to the drain.
• When VDS is more than zero, there is some horizontal electric fieldwhich causes a flow of electrons from source to drain.
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21SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 1
• The voltage of the surface under the gate, V(x), depends on thevoltages of Source and Drain.
• If VDS is zero, VD= VS=V(x). The charge density Qd (unit C/m) is uniform.
)( THGSoxd VVWCQ −−=
))(()( THGSoxd VxVVWCxQ −−−=
( ) ( )L
VVWLC
L
VC
L
QQ THGSox
d
−⋅−=⋅−=−=
• If VDS is not zero, the channel is tapered, and V(x) is not constant. Thecharge density depends on x.
22SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 3
velocityQdt
dx
dx
dQ
dt
dQI d ⋅=×==
dt
dVEEvelocity −=⋅= ,µ
))(
(dx
xdVvelocity
−⋅=→ µ
))(()( THGSoxd VxVVWCxQ −−−=
∫ −−=∫==
DSV
VTHGSnox
L
xD dVVxVVWCdxI
00
])([µ
]2
1)[( 2
DSDSTHGSoxnD VVVVL
WCI −−= µ
• Current :
� Velocity in terms of V(x):
� Qd in terms of V(x):
dx
xdVVxVVWCI nTHGSoxD
)(])([ µ−−=
• Current in terms of V(x):
• Long-channel current equation:
© Microelectronic Circuits, 2004 Oxford University Press
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23SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 4
( )
⋅−⋅−⋅⋅⋅= 2
2
1DSDSTHGSoxnD VVVV
L
WCI µ
• Terminology:
effTHGS VVVVoltageEffectiveVoltageOverdriveL
WRatioAspect
=−==
=
• Current in Triode Region:
• If VDS ≤ VGS-VTH we say the device is operating in triode (or linear) region.
24SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 5
( )
( )
( )THGSoxnD
DSON
DSTHGSoxnD
THGSDS
VVL
WCI
VR
VVVL
WCI
VVVIf
−⋅⋅⋅==
⋅−⋅⋅⋅=
−<<
µ
µ
1
:2
• For very small VDS (deep Triode Region):
ID can be approximated to be a linear function of VDS.
The device resistance will be independent of VDS and willonly depend on Veff.
The device will behave like a variable resistor
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25SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 6
• Increasing VDS causes the channel to acquire a tapered shape. Eventually,as VDS reaches VGS – VTH the channel is pinched off at the drain. IncreasingVDS above VGS – VTH has little effect (ideally, no effect) on the channel’sshape.
© Microelectronic Circuits, 2004 Oxford University Press
• When VDS is more than VGS – VTH the channel is pinched off, and thehorizontal electric field produces a current.
26SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 7
• If VDS > VGS – VTH, the transistor is in saturation (active) region,and the channel is pinched off.
∫ −−=∫−
==
THGS VV
VTHGSnox
L
xD dVVxVVWCdxI
0
'
0
])([µ
2)('2
1THGSoxnD VV
L
WCI −= µ
• Let’s, for now, assume that L’=L. The fact thatL’ is not equal to L is a second-order effectknown as channel-length modulation.
• Since ID only depends on VGS, MOS transistors in saturation can beused as current sources.
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27SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 8
• Current Equation for NMOS:
( )
( )[ ]
−>>−⋅⋅⋅⋅
−<>⋅−⋅−⋅⋅⋅
−<<>⋅−⋅⋅⋅
−<
==
)(,;)(2
1
)(,;2
1
)()(2,;
)(;0
2
2
SaturationVVVVVifVVL
WC
TriodeVVVVVifVVVVL
WC
TriodeDeepVVVVVifVVVL
WC
offCutVVif
II
THGSDSTHGSTHGSoxn
THGSDSTHGSDSDSTHGSoxn
THGSDSTHGSDSTHGSoxn
THGS
DSD
µ
µ
µ
28SMEECE 488 – Set 1: Introduction and Background
Long Channel Current Equations - 9
• Current Equation for PMOS:
( )
( )[ ]
−>>−⋅⋅⋅⋅
−<>⋅−⋅−⋅⋅⋅
−<<>⋅−⋅⋅⋅
−<
==
)(,;)(2
1
)(,;2
1
)()(2,;
)(;0
2
2
SaturationVVVVVifVVL
WC
TriodeVVVVVifVVVVL
WC
TriodeDeepVVVVVifVVVL
WC
offCutVVif
II
THSGSDTHSGTHSGoxp
THSGSDTHSGSDSDTHSGoxp
THSGSDTHSGSDTHSGoxp
THSG
SDD
µ
µ
µ
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29SMEECE 488 – Set 1: Introduction and Background
Regions of Operation - 1
• Regions of Operation:Cut-off, triode (linear), and saturation (active or pinch-off)
© Microelectronic Circuits, 2004 Oxford University Press
• Once the channel is pinched off, the current through the channel isalmost constant. As a result, the I-V curves have a very small slope inthe pinch-off (saturation) region, indicating the large channelresistance.
30SMEECE 488 – Set 1: Introduction and Background
Regions of Operation - 2
• The following illustrates the transition from pinch-off to triode region forNMOS and PMOS devices.
• For NMOS devices:If VD increases (VG Const.), the device will go from Triode to Pinch-off.If VG increases (VD Const.), the device will go from Pinch-off to Triode.
** In NMOS, as VDG increases the device will go from Triode to Pinch-off.• For PMOS devices:
If VD decreases (VG Const.), the device will go from Triode to Pinch-off.If VG decreases (VD Const.), the device will go from Pinch-off to Triode.
** In PMOS, as VGD increases the device will go from Pinch-off to Triode.
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31SMEECE 488 – Set 1: Introduction and Background
Regions of Operation - 3
© Microelectronic Circuits, 2004 Oxford University Press
• NMOS Regions of Operation:
• Relative levels of the terminal voltages of the enhancement-type NMOStransistor for different regions of operation.
32SMEECE 488 – Set 1: Introduction and Background
Regions of Operation - 4
© Microelectronic Circuits, 2004 Oxford University Press
• PMOS Regions of Operation:
• The relative levels of the terminal voltages of the enhancement-typePMOS transistor for different regions of operation.
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33SMEECE 488 – Set 1: Introduction and Background
Regions of Operation - 5
Example:For the following circuit assume that VTH=0.7V.• When is the device on?
• What is the region of operation if the device is on?
• Sketch the on-resistance of transistor M1 as a function of VG.
34SMEECE 488 – Set 1: Introduction and Background
Transconductance - 1
• The drain current of the MOSFET in saturation region is ideally afunction of gate-overdrive voltage (effective voltage). In reality, it is alsoa function of VDS.
• It makes sense to define a figure of merit that indicates how well thedevice converts the voltage to current.
• Which current are we talking about?
• What voltage is in the designer’s control?
• What is this figure of merit?
.ConstVV
Ig
DSGS
Dm =∂
∂=
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35SMEECE 488 – Set 1: Introduction and Background
Transconductance - 2
• Transconductance in triode:
• Transconductance in saturation:
( )[ ]DSoxn
DSDSDSTHGSoxn
GSm
VL
WC
ConstVVVVV
L
WC
Vg
⋅⋅⋅=
=
⋅−⋅−⋅⋅⋅∂
∂=
µ
µ.2
1 2
)(
.)(
2
1 2
THGSoxn
DSTHGSoxn
GSm
VVL
WC
ConstVVV
L
WC
Vg
−⋅⋅⋅=
=
−⋅⋅⋅⋅∂
∂=
µ
µ
Example:Plot the transconductance of the following circuit as a function of VDS
(assume Vb is a constant voltage).
• Moral: Transconductance drops if the device enters the triode region.
36SMEECE 488 – Set 1: Introduction and Background
Transconductance - 3
• Transconductance, gm, in saturation:
THGS
DDoxnTHGSoxnm VV
II
L
WCVV
L
WCg
−⋅
=⋅⋅⋅=−⋅⋅⋅=2
2)( µµ
• If the aspect ratio is constant: gm depends linearly on (VGS - VTH).Also, gm depends on square root of ID.
• If ID is constant: gm is inversely proportional to (VGS - VTH).Also, gm depends on square root of the aspect ratio.
• If the overdrive voltage is constant: gm depends linearly on ID.Also, gm depends linearly on the aspect ratio.
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37SMEECE 488 – Set 1: Introduction and Background
Second-Order Effects (Body Effect)
Substrate Voltage:• So far, we assumed that the bulk and source of the transistor are at the
same voltage (VB=VS).• If VB >Vs, then the bulk-source PN junction will be forward biased, and
the device will not operate properly.• If VB <Vs,
– the bulk-source PN junction will be reverse biased.– the depletion region widens, and Qdep increases.– VTH will be increased (Body effect or Backgate effect).
• It can be shown that (what is the unit for γ ?):
ox
subsiFSBFTHTH C
NqVVV
⋅⋅⋅=
Φ⋅−+Φ⋅⋅+=
εγγ
2220 where
38SMEECE 488 – Set 1: Introduction and Background
Body Effect - 2
No Body Effect With Body Effect
Example:Consider the circuit below (assume the transistor is in the active region):• If body-effect is ignored, VTH will be constant, and I1 will only depend on
VGS1=Vin-Vout. Since I1 is constant, Vin-Vout remains constant.
CVVVConstCVVV THoutinTHoutin +=−→==−− .
• As Vout increases, VSB1 increases, and as a result VTH increases.Therefore, Vin-Vout Increases.
• In general, I1 depends on VGS1- VTH =Vin-Vout-VTH (and with body effectVTH is not constant). Since I1 is constant, Vin-Vout-VTH remains constant:
.. ContsDCVVVConstCVVV THoutinTHoutin ==+=−→==−−
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39SMEECE 488 – Set 1: Introduction and Background
Body Effect - 3
Example:For the following Circuit sketch the drain current of transistor M1 when VX
varies from -∞ to 0. Assume VTH0=0.6V, γ=0.4V1/2, and 2ΦF=0.7V.
40SMEECE 488 – Set 1: Introduction and Background
Channel Length Modulation - 1
L
( )LL
LL
LLLLL∆+⋅≈
∆−⋅=
∆−= 1
1
1
111
'
1
• When a transistor is in the saturation region (VDS > VGS – VTH),the channel is pinched off.
• The drain current is LL-L'VVL
WCI THGSoxnD ∆=−= where2)(
'2
1 µ
• Assuming we get:DSVL
L ⋅=∆ λ ( ) ( )DSVLL
LLL
⋅+⋅=∆+⋅≈ λ11
11
'
1
• The drain current is ( ) ( )DSTHGSoxnTHGSoxnD VVVL
WCVV
L
WCI ⋅+⋅−≈−= λµµ 1
2
1 )(
'2
1 22
• As ID actually depends on both VGS and VDS, MOS transistors arenot ideal current sources (why?).
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41SMEECE 488 – Set 1: Introduction and Background
Channel Length Modulation - 2
• λ represents the relative variation in effective length of the channel for a givenincrement in VDS.
• For longer channels λ is smaller, i.e., λ ∝ 1/L
• Transconductance:
In Triode:
In Saturation (ignoring channel length modulation):
In saturation with channel length modulation:
• The dependence of ID on VDS is much weaker than its dependence on VGS.
.ConstVV
Ig
DSGS
Dm =∂
∂=
DSoxnm VL
WCg ⋅⋅⋅= µ
THGS
DDoxnTHGSoxnm VV
II
L
WCVV
L
WCg
−⋅
=⋅⋅⋅=−⋅⋅⋅=2
2)( µµ
( ) ( )THGS
DDSDoxnDSTHGSoxnm VV
IVI
L
WCVVV
L
WCg
−⋅
=⋅+⋅⋅⋅⋅=⋅+⋅−⋅⋅⋅=2
121)( λµλµ
42SMEECE 488 – Set 1: Introduction and Background
Channel Length Modulation - 3
Example:Given all other parameters constant, plot ID-VDS characteristic of an NMOSfor L=L1 and L=2L1
( ) ( )
( )
2
2
2
2
1
12
1
L
W
L
W
V
I
VVL
WC
V
I
VVVL
WCI
DS
D
THGSoxnDS
D
DSTHGSoxnD
∝⋅∝∂∂
⋅−=∂∂
⋅+⋅−≈
λ
λµ
λµ
:Therefore
: get weSo
• Changing the length of the device from L1 to 2L1 will flatten the ID-VDScurves (slope will be divided by two in triode and by four in saturation).
• Increasing L will make a transistor a better current source, whiledegrading its current capability.
• Increasing W will improve the current capability.
• In Triode Region:
• In Saturation Region:
( )[ ]L
W
V
I
VVVVL
WCI
DS
D
DSDSTHGSoxnD
∝∂∂
⋅−⋅−⋅⋅⋅≈
:Therefore
2
2
1µ
SM 22
43SMEECE 488 – Set 1: Introduction and Background
Sub-threshold Conduction
• If VGS < VTH, the drain current is not zero.• The MOS transistors behave similar to BJTs.
• In BJT:
• In MOS:
• As shown in the figure, in MOS transistors, the drain current drops byone decade for approximately each 80mV of drop in VGS.
• In BJT devices the current drops faster (one decade for approximatelyeach 60mv of drop in VGS).
• This current is known as sub-threshold or weak-inversion conduction.
T
BE
V
V
SC eII ⋅=
T
GS
V
V
D eII ⋅⋅= ζ0
44SMEECE 488 – Set 1: Introduction and Background
CMOS Processing Technology
• Top and side views of a typical CMOS process
SM 23
45SMEECE 488 – Set 1: Introduction and Background
CMOS Processing Technology
• Different layers comprising CMOS transistors
46SMEECE 488 – Set 1: Introduction and Background
Photolithography (Lithography)
• Used to transfer circuit layout information to the wafer
SM 24
47SM
Typical Fabrication Sequence
EECE 488 – Set 1: Introduction and Background
48SMEECE 488 – Set 1: Introduction and Background
Self-Aligned Process
• Why source and drain junctions are formed after the gate oxideand polysilicon layers are deposited?
SM 25
49SMEECE 488 – Set 1: Introduction and Background
Back-End Processing
• Oxide spacers and silicide
50SMEECE 488 – Set 1: Introduction and Background
Back-End Processing
• Contact and metal layers fabrication
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51SMEECE 488 – Set 1: Introduction and Background
Back-End Processing
• Large contact areas should be avoided to minimize thepossibility of spiking
52SMEECE 488 – Set 1: Introduction and Background
MOS Layout - 1
• It is beneficial to have some insight into the layout of the MOS devices.
• When laying out a design, there are many important parameters weneed to pay attention to such as: drain and source areas,interconnects, and their connections to the silicon through contactwindows.
• Design rules determine the criteria that a circuit layout must meet for agiven technology. Things like, minimum length of transistors, minimumarea of contact windows, …
SM 27
53SMEECE 488 – Set 1: Introduction and Background
MOS Layout - 2
Example:Figures below show a circuit with a suggested layout.
• The same circuit can be laid out in different ways, producing differentelectrical parameters (such as different terminal capacitances).
54SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 1
• The quadratic model determines the DC behavior of a MOS transistor.• The capacitances associated with the devices are important when
studying the AC behavior of a device.• There is a capacitance between any two terminals of a MOS transistor.
So there are 6 Capacitances in total.• The Capacitance between Drain and Source is negligible (CDS=0).
• These capacitances will depend on the region of operation (Biasvalues).
SM 28
55SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 2
• The following will be used to calculate the capacitances betweenterminals:1. Oxide Capacitance: ,
2. Depletion Capacitance:
3. Overlap Capacitance:
4. Junction Capacitance:
� Sidewall Capacitance:
� Bottom-plate Capacitance:
oxCLWC ⋅⋅=1ox
oxox t
Cε
=
F
subsidep
NqLWCC
Φ⋅⋅⋅
⋅⋅==42
ε
fringeoxDov CCLWCCC +⋅⋅=== 43
m
B
R
jjun
V
CC
Φ+
=
1
0jswC
jC
jswj CCCC +== 65
56SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 3
In Cut-off:1. CGS: is equal to the overlap capacitance.2. CGD: is equal to the overlap capacitance.3. CGB: is equal to Cgate-channel = C1 in series with Cchannel-bulk = C2.
4. CSB: is equal to the junction capacitance between source andbulk.
5. CDB: is equal to the junction capacitance between source andbulk.
3CCC ovGS ==
4CCC ovGD ==
5CCSB =
6CCDB =
SM 29
57SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 4
In Triode:• The channel isolates the gate from the substrate. This means that if VG
changes, the charge of the inversion layer are supplied by the drainand source as long as VDS is close to zero. So, C1 is divided betweengate and drain terminals, and gate and source terminals, and C2 isdivided between bulk and drain terminals, and bulk and sourceterminals.1. CGS:2. CGD:3. CGB: the channel isolates the gate from the substrate.4. CSB:5. CDB:
0=GBC
21C
CC ovGS +=
22
5
CCCSB +=
22
6
CCCDB +=
21C
CC ovGD +=
58SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 5
In Saturation:• The channel isolates the gate from the substrate. The voltage across
the channel varies which can be accounted for by adding twoequivalent capacitances to the source. One is between source andgate, and is equal to two thirds of C1. The other is between source andbulk, and is equal to two thirds of C2.1. CGS:2. CGD:3. CGB: the channel isolates the gate from the substrate.4. CSB:5. CDB:
0=GBC
13
2CCC ovGS +=
25 3
2CCCSB +=
6CCDB =
ovGD CC =
SM 30
59SMEECE 488 – Set 1: Introduction and Background
Device Capacitances - 6
• In summary:
CDB
CSB
CGB
CGD
CGS
SaturationTriodeCut-off
ovC
ovC ovC
13
2CCov +
25 3
2CC +
0
6C2
26
CC +
22
5
CC +
21C
Cov +
21C
Cov +
0121
21 CCCC
CCGB⟨⟨
+⋅
6C
5C
60SMEECE 488 – Set 1: Introduction and Background
Importance of Layout
Example (Folded Structure):Calculate the gate resistance of the circuits shown below.
Folded structure:• Decreases the drain capacitance• Decreases the gate resistance• Keeps the aspect ratio the same
SM 31
61SMEECE 488 – Set 1: Introduction and Background
Passive Devices
• Resistors
62SMEECE 488 – Set 1: Introduction and Background
Passive Devices
• Capacitors:
SM 32
63SMEECE 488 – Set 1: Introduction and Background
Passive Devices
• Capacitors
64SMEECE 488 – Set 1: Introduction and Background
Passive Devices
• Inductors
SM 33
65SMEECE 488 – Set 1: Introduction and Background
Latch-Up
• Due to parasitic bipolar transistors in a CMOS process
66SMEECE 488 – Set 1: Introduction and Background
Small Signal Models - 1
• Small signal model is an approximation of the large-signal modelaround the operation point.
• In analog circuits most MOS transistors are biased in saturation region.
• In general, ID is a function of VGS, VDS, and VBS. We can use this Taylorseries approximation:
BSmbo
DSGSmBS
BS
DDS
DS
DGS
GS
DD
BSBS
DDS
DS
DGS
GS
DDD
Vgr
VVgV
V
IV
V
IV
V
II
VV
IV
V
IV
V
III
∆⋅+∆
+∆⋅=∆⋅∂∂
+∆⋅∂∂
+∆⋅∂∂
≈∆
+∆⋅∂∂+∆⋅
∂∂+∆⋅
∂∂+= sorder term second :ExpansionTaylor 0
SM 34
67SMEECE 488 – Set 1: Introduction and Background
Small Signal Models - 2
• Current in Saturation:
• Taylor approximation:
• Partial Derivatives:
( ) ( )DSTHGSoxnTHGSoxnD VVVL
WCVV
L
WCI ⋅+⋅−≈−= λµµ 1
2
1 )(
'2
1 22
BSBS
DDS
DS
DGS
GS
DD V
V
IV
V
IV
V
II ∆⋅
∂∂
+∆⋅∂∂
+∆⋅∂∂
≈∆
( )
( )
mbm
SBF
m
SBF
DSTHGSoxnBS
TH
TH
D
BS
D
oDTHGSoxn
DS
D
mDSTHGSoxnGS
D
ggV
g
VVVV
L
WC
V
V
V
I
V
I
rIVV
L
WC
V
I
gVVVL
WC
V
I
=⋅=
+Φ⋅−⋅−=
+Φ⋅−⋅
⋅+⋅−⋅⋅⋅−=∂∂
⋅∂∂
=∂∂
=⋅≈⋅−⋅⋅⋅⋅=∂∂
=⋅+⋅−⋅⋅⋅=∂∂
ηγ
γλµ
λλµ
λµ
22
221)(
1)(
2
1
1)(
2
68SMEECE 488 – Set 1: Introduction and Background
Small Signal Models - 3
• Small-Signal Model:
BSmbo
DSGSmD vg
r
vvgi ⋅++⋅=
• Terms, gmvGS and gmbvBS, can be modeled by dependent sources.These terms have the same polarity: increasing vG, has the sameeffect as increasing vB.
• The term, vDS/ro can be modeled using a resistor as shown below.
SM 35
69SMEECE 488 – Set 1: Introduction and Background
Small Signal Models - 4
• Complete Small-Signal Model with Capacitances:
• Small signal model including all the capacitance makes the intuitive(qualitative) analysis of even a few-transistor circuit difficult!
• Typically, CAD tools are used for accurate circuit analysis
• For intuitive analysis we try to find a simplest model that can representthe role of each transistor with reasonable accuracy.
70SMEECE 488 – Set 1: Introduction and Background
Circuit Impedance - 1
• It is often useful to determine the impedance of a circuit seen from aspecific pair of terminals.
• The following is the recipe to do so:1. Connect a voltage source, VX, to the port.2. Suppress all independent sources.3. Measure or calculate IX.
X
X
X I
VR =
SM 36
71SMEECE 488 – Set 1: Introduction and Background
Circuit Impedance - 2
Example:• Find the small-signal impedance of the following current
sources.• We draw the small-signal model, which is the same for both
circuits, and connect a voltage source as shown below:
o
X
X
X
o
X
GSm
o
X
X
ri
vR
r
vvg
r
vi
==
=⋅+=
72SMEECE 488 – Set 1: Introduction and Background
Circuit Impedance - 3
Example:• Find the small-signal impedance of the following circuits.• We draw the small-signal model, which is the same for both
circuits, and connect a voltage source as shown below:
mbm
o
mbm
o
X
X
X
XmbXm
o
X
BSmbGSm
o
X
X
ggr
ggr
i
vR
vgvgr
vvgvg
r
vi
111
1 =++
==
⋅+⋅+=⋅−⋅−=
SM 37
73SMEECE 488 – Set 1: Introduction and Background
Circuit Impedance - 4
Example:• Find the small-signal impedance of the following circuit. This
circuit is known as the diode-connected load, and is usedfrequently in analog circuits.
• We draw the small-signal model and connect the voltagesource as shown below:
m
o
m
o
X
X
X
m
o
XXm
o
X
GSm
o
X
X
gr
gr
i
vR
gr
vvgr
vvg
r
vi
11
1
1
=+
==
+⋅=⋅+=⋅+=
• If channel length modulation is ignored (ro=∞) we get:
mmm
oX gggrR
111 =∞==
74SMEECE 488 – Set 1: Introduction and Background
Circuit Impedance - 5
Example:• Find the small-signal impedance of the following circuit. This
circuit is a diode-connected load with body effect.
mbm
o
mbm
o
mbm
o
X
X
X
mbm
o
X
XmbXm
o
X
BSmbGSm
o
X
X
ggr
ggr
ggr
i
vR
ggr
v
vgvgr
vvgvg
r
vi
1111
1
1
=+
=++
==
++⋅=
⋅+⋅+=⋅−⋅−=
• If channel length modulation is ignored (ro=∞) we get:
mbmmbmmbmmbm
oX ggggggggrR
11111 =+
=+
∞=+
=
SM 38
75SMEECE 488 – Set 1: Introduction and Background
Equivalent Transconductance - 1
• Recall that the transconductance of a transistor was a a figure ofmerit that indicates how well the device converts a voltage to current.
• It is sometimes useful to define the equivalent transconductance of acircuit as follows:
.ConstVV
Ig
DSGS
D
m =∂∂=
.ConstVV
IG
OUTIN
OUT
m =∂∂=
• The following is a small-signal block diagram of an arbitrary circuitwith a Norton equivalent at the output port. We notice that:VOUT=Constant so vOUT=0 in the small signal model.
0==
OUTIN
OUT
m vv
iG
76SMEECE 488 – Set 1: Introduction and Background
Equivalent Transconductance - 2
Example:• Find the equivalent transconductance of an NMOS transistor
in saturation from its small-signal model.
m
IN
OUT
m
INmGSmOUT
gv
iG
vgvgi
==
⋅=⋅=
SM 39
77SMEECE 488 – Set 1: Introduction and Background
Equivalent Transconductance - 3
Example:• Find the equivalent transconductance of the following circuit
when the NMOS transistor in saturation.
( )
( )SSmbSmOO
Om
O
S
SmbSm
m
IN
OUT
m
INm
O
S
SmbSmOUT
O
SOUT
SOUTmbSOUTINm
O
S
BSmbGSmOUT
SOUTGSSGSIN
RRgRgrr
rg
r
RRgRg
g
v
iG
vgr
RRgRgi
r
RiRigRivg
r
vvgvgi
Rivvvv
+⋅+⋅⋅+⋅=
+⋅+⋅+==
⋅=
+⋅+⋅+⋅
⋅−⋅−⋅+⋅−⋅=−⋅+⋅=
⋅+=+=
1
1
)(
78SMEECE 488 – Set 1: Introduction and Background
Short-Channel Effects
• Threshold Reduction
– Drain-induced barrier lowering (DIBL)
• Mobility degradation
• Velocity saturation
• Hot carrier effects
– Substrate current
– Gate current
• Output impedance variation
SM 40
79SMEECE 488 – Set 1: Introduction and Background
Threshold Voltage Variation in Short Channel Devices
• The Threshold of transistors fabricated on the same chip decreases asthe channel length decreases.
• Intuitively, the extent of depletion regions associated with drain andsource in the channel area, reduces the immobile charge that must beimaged by the charge on the gate.
80SMEECE 488 – Set 1: Introduction and Background
Drain-Induced Barrier Lowering (DIBL)
When the channel is short, the drainvoltage increases the channel surfacepotential, lowering the barrier to flowcharge from source (think of increasedelectric field) and therefore, decreasingthe threshold.
SM 41
81SMEECE 488 – Set 1: Introduction and Background
Effects of Velocity Saturation
• Due to drop in mobility at high electric fields
• (a) Premature drain current saturation and (b) reduction in gm
82SMEECE 488 – Set 1: Introduction and Background
Hot Carrier Effects
• Short channel devices may experience high lateral drain-sourceelectric field
• Some carriers that make it to drain have high velocity (called“hot” carriers)
• “Hot” carriers may “hit” silicon atoms at high speed and causeimpact ionization
• The resulting electron and holes are absorbed by the drain andsubstrate causing extra drain-substrate current
• Really “hot” carriers may be injected into gate oxide and flow outof gate causing gate current!
SM 42
83SMEECE 488 – Set 1: Introduction and Background
Output Impedance Variation
Recall the definition of λ.
84SMEECE 488 – Set 1: Introduction and Background
Output Impedance Variation in Short-Channel Devices