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Islamic Azad University - Qazvin Branch 1
HSPICE® Introduction
Autumn 2006
Islamic Azad University - Qazvin Branch 2
SPICE History SPICE Simulation Program Integrated Circuit Emphasis
Prof. Ronald A. Rohrer
(SPICE’s father)
1971 : CANCER
1972 – SPICE1
1981 – HSPICE®
1983 – SPICE2G6
. . .
Present : Star-HSPICE®
Prof. Larry Nagel
Islamic Azad University - Qazvin Branch 3
Star-HSPICE Characteristics
Simulation in Stable, Transient, Frequency Domain Modes
Simulation from DC to Microwave frequencies Greater than 100GHz
Number of Elements Only Limited by Computer Memory
Using from AvanWaves to Waveforms Display and Analysis
Circuits and Models Optimization
Islamic Azad University - Qazvin Branch 4
Simulation Process
Using from a Text Editor Program to Generating an Input File. This File consist Information about Circuit and Called NETLIST. This File Type is “.SP”
HSPICE.EXE Running to Circuit Simulation and Output Data Generating
AvanWaves Running to Output Graphs Display
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Creating A “.SP” File
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HSPICE Program Running
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HSPICE Menus
Open .SP Files
Simulation Display
Graphs
Edit NETLIST
Quit from Program
Edit .LIS File
.SP File Path1st Line of NETLIST
.LIS File Path
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Example 1 – An RC Network AC Analysis
R11 K
R21 K
C10.001 uF
V110 Vdc
1 Vac
0
1
2
Always “0” is GND
NETLISTA Simple AC Run
* Elements Statements
V1 1 0 10 AC 1
R1 1 2 1K
R2 2 0 1K
C1 2 0 0.001u
* Control Statements
.OP
.AC DEC 10 1K 1MEG
.PRINT AC V)1( V)2( I)R2( I)C1(
.END
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Circuit Simulation
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AvanWaves Running
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Graphs Displaying
Mouse Right Click
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Example 2 – An RC Network Transient Analysis
R11 K
R21 K
C10.001 uF
V110 Vdc
1 Vac
0
1
2
Always “0” is GND
NETLISTA Simple Transient Run
* Elements Statements
V1 1 0 10 AC 1 PULSE 0 5 10N 20N 20N 500N 2U
R1 1 2 1K
R2 2 0 1K
C1 2 0 0.001U
* Control Statements
.OP
.TRAN 10N 2U
.PRINT TRAN V)1( V)2( I)R2( I)C1(
.END
Islamic Azad University - Qazvin Branch 13
Graphs Displaying
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Example 3 – Id-Vds characteristics in NMOS
0
1
2
Always “0” is GND
NETLIST
)Vds,Id( for n-Channel.opVdd 1 0 dc 2Vgg 2 0 dc 1.15M1 1 2 0 0 MNMOS L=1u W=30u.MODEL MNMOS NMOS VTO=0.7 KP=110U +LAMBDA=0.04 GAMMA=0.4 PHI=0.7.dc Vdd 0 1.2 0.05 )Vgg 1.2 1.6 0.1(.print dc Id=par)"-I)Vdd("(.end
Vdd
Vgg
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Graphs Displaying
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Example 4 – Temperature effect in NMOS Id-Vgs characteristics
0
1
2
Always “0” is GND
NETLIST
)Vgg,Id( for n-Channel )temp. effect(.opVdd 1 0 dc 2Vgg 2 0 dc 1.15M1 1 2 0 0 MNMOS L=1u W=30u.MODEL MNMOS NMOS VTO=0.7 KP=110U +LAMBDA=0.04 GAMMA=0.4 PHI=0.7.temp -10 20 45.dc Vgg 0 1.8 0.05.probe dc Id=par)"-I)Vdd("(.end
Vdd
Vgg
M1
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Graphs Displaying
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Example 5 – CMOS Inverter
0
NETLISTCMOS Inverter CircuitM1 OUT IN VDD VDD MPMOS L=1U W=20UM2 OUT IN 0 0 MNMOS L=1U W=20UVDD VDD 0 5VIN IN 0 0 PULSE 0.2 4.8 2N 1N 1N 5N 20NCLOAD OUT 0 0.75P.MODEL MNMOS NMOS VTO=0.7 KP=25U +LAMBDA=0.01 GAMMA=0.8 PHI=0.6.MODEL MPMOS PMOS VTO=-0.7 KP=8U +LAMBDA=0.02 GAMMA=0.4 PHI=0.6.OP.TRAN 200P 20N.PRINT TRAN V)IN( V)OUT(.END
Vdd
-
+Cload
outin
Vin
m1
m2
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Graphs Displaying
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Example 6 – Id-Vgs characteristics in NMOS - w/l influence
0
1
2
NETLISTV)gg,Id( for n-Channel )W/L effect(.opVdd 1 0 dc 2Vgg 2 0 dc 1.15M1 1 2 0 0 MNMOS L=LM W=WM.MODEL MNMOS NMOS VTO=0.7 KP=110U +LAMBDA=0.04 GAMMA=0.4 PHI=0.7.data ratioLM WM1u 10u1u 20u1u 50u.enddata.dc Vgg 0 1.8 0.05 data=ratio.print dc Id=par)"-I)Vdd("(.end
Vdd
Vgg
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Graphs Displaying
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Scaling Factors in HSPICE
ScaleMarkFactor Name
1e-15ffemto
1e-12ppico
1e-9nnano
1e-6umicro
1e-3mmili
1e3kkilo
1e6megmega
1e9ggiga
1e12ttera
20log10dbdecibel
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units in HSPICEUnitMark
Angstroma
ampereamp
centimetercm
degreedeg
Electron-volt
ev
faradf
Henryh
meterm
ohmohm
voltv
seconds
Islamic Azad University - Qazvin Branch 24
Commands Summary .TEMP t1 <t2 <t3 ..>> for example : .TEMP -55.0 25.0 125.0
.MODEL mname type <VERSION=version_number> + <pname1=val1 pname2=val2 …>Type : AMP = Op-Amp NMOS = n-Ch MOSFET PMOS = p-Ch MOSFET R = Resistor & …Pname1… : Parameters Name for Example : .MODEL MNMOS NMOS VTO=0.7 KP=110U LAMBDA=0.04
+GAMMA=0.4 PHI=0.7
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Device Defining 1
Resistor :Rxxx n1 n2 <mname> <R=>resistance <<TC1=>val>
+<<TC2=>val> <SCALE=val> <M=val> <AC=val> +<DTEMP=val> <L=val> <W=val> <C=val>
Example : RC1 13 17 R=1k TC1=0.001 TC2=0
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Device Defining 2
Capacitor :Cxxx n1 n2 <mname> <C=>capacitance <<TC1=>val>
+<<TC2=>val> <SCALE=val> <M=val> <IC=val> +<DTEMP=val> <L=val> <W=val>
Example : Cshunt out gnd C=100f TC1=0.001 L=0.003
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Device Defining 3
MOSFET :Mxxx nd ng ns <nb> mname <<L=>length> <<W=>width>
+<AD=val> <AS=val> <PD=val> <PS=val> <NRD=val> +<NRS=val> <RDC=val> <RSC=val> <OFF> <IC=Vds, +Vgs, Vbs> <M=val> <DTEMP=val> <GEO=val> +<DELVTO=val>
Example : M1 vdd vgg 0 0 MNMOS L=1u W=30u
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Supply Defining 1
Independent : Vxxx n+ n- <<DC=>dcval> <tranfan>
+<AC=acmag, <acphase>>
Ixxx n+ n- <<DC=>dcval> <tranfun>
+<AC=acmag, <acphase>> <M=val>
Tranfun = AM, DC, EXP, PU, SIN, …
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Supply Defining 2
Pulse : Vxxx n+ n- PU<LSE>
+<(> V1 V2 <td <tr <tf <pw <per>>>>> <)>
Ixxx n+ n- PU<LSE>
+<(> V1 V2 <td <tr <tf <pw <per>>>>> <)>
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Supply Defining 3
Sin : Vxxx n+ n- SIN
+<(> Vo Va <freq <td <θ <φ>>>> <)>
Ixxx n+ n- SIN
+<(> Vo Va <freq <td <θ <φ>>>> <)>
example : VIN 3 0 SIN (0 1 100MEG 1NS 1e8)
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THANKS A LOT FOR YOUR ATTENTION