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2008 ITRS

Emerging Research Materials

[ERM]

December 9, 2008

Michael Garner – IntelDaniel Herr – SRC

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2008 ERM ParticipantsHiro Akinaga AISTNobuo Aoi MatsushitaKoyu Asai RenesasYuji Awano FujitsuDaniel-Camille Bensahel STMBill Bottoms NanonexusGeorge Bourianoff IntelAlex Bratkovski HPJohn Carruthers Port. State Univ.U-In Chung SamsungHongjie Dai Stanford Univ.Jean Dijon LETISatoshi Fujimura TOKMichael Garner Intel Joe Gordon IBMDaniel Herr SRCJim Hutchby SRCKohei Ito Keio Univ.James Jewett IntelTed Kamins HP Dae-Hong Ko Yonsei UniversityLouis Lome IDA cons.

Francois Martin LETIFumihiro Matsukura Tohoku UYoshio Nishi StanfordYaw Obeng NISTNachiket Raravikar IntelCurt Richter NISTDave Roberts Air ProductsTadashi Sakai ToshibaMitusru Sato TOKSadasivan Shankar IntelAtsushi Shiota JSRMicroKaushal Singh AMATNaoyuki Sugiyama TorayShinichi Tagaki U of TokyoKoki Tamura TOKYasuhide Tomioka AISTKen Uchida ToshibaBert Vermiere Env. Metrol. Corp.Yasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLAH.S. Philip Wong Stanford UniversityHiroshi Yamaguchi NTTToru Yamaguchi NTTVictor Zhirnov SRC

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Outline

ERM Goals, Scope, Plans, and Projected Timing ERM for extending CMOS

Alternate Channel Materials Lithography FEP Interconnects

ERM for Beyond CMOS Assembly & Packaging Example ERM Metrology & Modeling Needs ESH Summary

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Macromolecular Scale Devices are on the ITRS Horizon

ITRS

Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).

Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materials

Macromolecular Scale Devices

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Emerging Research Materials [ERM]

Goal: Identify critical ERM technical and timing requirements for ITWG identified applications

Align ERM requirements with ITWG needsIdentify difficult research challenges that must be overcomeERM that exhibit potential to address ITWG gaps and requirements

Consolidate materials research requirements for:University and government researchers

Chemists, materials scientists, etc.Industry Researchers

Semiconductor Chemical, material, and equipment suppliers

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2008 Key Messages

No updates in ERM Chapter in 2008

Preparations for 2009 ERM Chapter Establish Critical Assessment Process Add ERD Alternate Channel Materials Increase Focus on Carbon Based Devices Workshops In Process

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Emerging Research Materials: Workshop Calendar

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ERM Potential Insertion Matrix

Earliest Potential Insertion Horizon

Current Application

3-5 yrs. 5-10 yrs. 10-15 yrs. 15+ yrs.Not on

Roadmap

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2009 ERM Critical Assessment Candidates

Materials ERD Memory

ERD Logic Lithography FEP Interconnects Assembly and Package

Alternate Channel Material

Critical Assessment

Low Dimensional Materials

Critical Assessment

Critical Assessment: Vias and Interconnects

Critical Assessment: Nano-tubes/solders for chip attach

Macromolecules Critical Assessment

Self Assembled Materials

Critical Assessment

Spin Materials

Complex Metal Oxides

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ERM Assessment Matrix: Ex. Lithography

Rating Person

Lithography Materials Evaluation Table: Novel Macromolecules

Average Potential

Sum PotentialDemonstrated

ResolutionDefect Density Speed LER

Ability to Simultaneously Achieve Resolution,

Sensitivity, & Line Edge Roughness

Etch Compatibility

(hard mask compatible)

Outgassing (EUV) Stripablity

Research Target

Novel Molecules for Dual Exposure Resist

Novel Molecules for Dual Exposure CEL

Non CAR Resist Self Assembly (graphepitaxy) Hybrid Resist & Self Assembly

Surface Patterned Self Assembly                      

Average #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0!

StdDev#DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0!

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Extending CMOS Alternate Channel Materials

Alternate Channel Materials

Ge & III-V Compounds

Nanowires

Graphene

Carbon Nanotubes

III-V Heterostructures(L. Samuelson, Lund Univ.)

P. Kim, Columbia Univ.

Carbon Nanotube FETSource Intel

Assess

Materials Performance

Gate materials

Contacts

Interfaces

MOS

Also Identify Novel Metrology & Modeling Needs

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ERM to Extend Moore’s Law

Lithography

Novel molecules

Directed Self Assembly

P. Nealey, U. Wisc.

Dendrimers, Frechet, UC-B

OR

RO

RO

OR RO

OR

OR

RO

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Molecular Glasses

Ober, Cornell

Ross, MIT

Via

Wire

Via

Wire

InterconnectsFront End Processes

Y. Awano, Fujitsu

Nanotubes

Nanowires

Self Assembled Materials

Directed Self Assembly

Selective Deposition

Selective Etching

Deterministic Doping

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Deterministic Doping:Assess the Impact of Ordered Dopant

Arrays on Device PerformanceApproach: Fabricate semiconductors with various ordered distributions of dopant atoms and compare their performance with that of existing semiconductors that have a random arrangement of dopant atoms.

Sour

ce

Dra

in

ChannelGat

e

?Ordered distribution of dopant atoms

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Beyond CMOS Materials & Interfaces

Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules [Potential Transition Out of ERM] Interfaces & “state” transport materials

Spin StateMolecular StateFerroelectric

Polarization

Resistance Change

Mechanical State

Electrochemical

Atomic SwitchFE FETIndividual or Collective

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Emerging Packaging Applications

Thermal Nanotubes

High Density Power Delivery Capacitors

Dielectrics: High K

Self Assembly

Interconnects: Nanotubes or Nanowires

Package Thermo-Mechanical

Substrate: Nanoparticles, Macromolecules

Adhesives: Macromolecules, Nanoparticles

Chip Interconnect: Nanoparticles

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Emerging Metrology and Modeling Needs Metrology

Chemical and structural imaging and dimensional accuracy at the nm scale [Nondestructive, 3D imaging]

Low dimensional material properties (Mapping) Nano-interface characterization (carbon) Simultaneous spin and electrical properties nm scale characterization of vacancies and defects

Modeling Materials and Interfaces Low dimensional material synthesis & properties Spin material properties Strongly correlated electron material properties

Long range and dynamic Integrated models and metrology (de-convolution of nm scale

metrology signals) Metrology and modeling must be able characterize

and predict performance and reliability

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Environment, Safety, and Health

Metrology needed to detect the presence of nanoparticles

Research needed on potential undesirable bio-interactions of nanoparticles

Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercialization

Leverage Existing Research and Standards Activities

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2009 Emerging Research Materials Summary Establish ERM Outline and Writing Assignments

Restructuring to Application Centric organization Establish links to other ITWG chapters, as warranted

Complete Critical Assessment Process Critical Assessment: CMOS Extension, Interconnect, and Lithography Beyond CMOS: Trends on critical materials & properties

Complete ERM Workshops All workshops identify Metrology, Modeling and ESH support as

appropriate

Finalize new materials needs and transitions ERD, Lithography, FEP, Interconnects, Assembly & Packaging, PIDS Establish Concrete targets Functional Diversification

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19

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