ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging...

ITRS Winter Conference 2008 Seoul, Korea 1

Work in Progress: Not for Distribution

2008 ITRS

Emerging Research Materials

[ERM]

December 6-9, 2008

Michael Garner – IntelDaniel Herr – SRC



ERM Agenda December 7, 2008

Time Subject Location

9:00 -10:00 Plenary Plenary RM

10:30-11:30 ERM Critical Assessment & A&P, & Litho Plans

ERM

11:30-12:30 Assembly & Packaging TWG -ERM

A&P Area

12:30-13:30 Lunch

13:30-14:00 Litho TWG - ERM Litho Area

14:00-14:45 ESH Table, Modeling Needs ERM

14:45-15:30 ESH TWG-ERM ESH Area





15:30-16:30 Modeling TWG-ERM Modeling Area

16:30-17:00 Interconnect Needs & Assessment

ERM

17:00-17:45 FEP, PIDS & ERD Needs ERM

17:45 Adjourn





9:00-10:00 Beyond CMOS Plenary RM

10:00-11:00 Interconnect TWG-ERM Interconnect Area

11:00-11:45 FEP TWG - ERM FEP Area

11:45-12:30 PIDS TWG -ERM PIDS Area

12:30-14:00 Lunch (Public Presentation & EOD Wrap up due)

14:00-14:45 ERD-ERM ERM Room

14:45-15:30 Metrology Needs & Workshop Plans, Public Conf. Presentation

ERM





15:30-16:00 ERM, ERD, FEP, PIDS Alignment

TBD

16:00-16:30 Metrology TWG-ERM Metrology Area

16:30-18:15 Plenary Plenary RM

18:15 Adjourn

18:30 ITRS Dinner

December 9, 2008 Public Conference



2009 ERM Workshops• F-t-F: Novel Macromolecules: ~February 28,

2009, SF Bay Area: Aligned with SPIE Microlithography Symposium.

• F-t-F: ERM Complex & Strongly Correlated Electron Materials, Early March ‘09, Japan

• E-WS: Complex Metal Oxides January ~18, 2009

• Modeling WS SF MRS• Metrology WS Albany, May 2009



Emerging Research Materials 2009

• Establish ERM Outline and Writing Assignments • Refine Critical Assessment Process

– CMOS Extension: Detailed Critical Assessment– Beyond CMOS: Trends on critical materials & properties– Update Key Challenges Tables

• Plan Workshops on ERM– All workshops should identify Metrology, Modeling and ESH

support as appropriate

• Finalize new materials needs based on ITWG inputs– ERD, Lithography, FEP, Interconnects, Assembly &

Packaging, PIDS– Establish Concrete targets– Functional Diversification



ERM Outline• Scope• Introduction• Difficult Challenges• Challenges for Multi-application ERM (Back-up?)• Materials for Alternate Channel CMOS (PIDS & ERD)

– Critical Assessment• Materials for Memory Devices

– Critical Assessment• ERM for Beyond CMOS (ERD)• ERM for Lithography

– Resist (pixilated, Multi photon resist, novel)– Self Assembled Materials– Transition Table (Molecular glasses, evolutionary resist macromolecular design, etc.)

• ERM for FEP & PIDS– Deterministic Doping– Self Assembly for Selective Deposition & Etch

• ERM for Interconnects• ERM for Assembly & Package• ERM ESH Research Needs• ERM Metrology Needs• ERM Modeling Needs



X-cutting Challenges

• LDM– Control of placement & direction– Control of nanostructure, properties & macro properties

• Contact & Interface issues• Macromolecules (Transition table?)• Self Assembled Materials

– Control of placement, defects, and registration

• Complex metal oxides– Control of properties, interfaces, defects, and moisture

degradation



Materials for Alternate Channel CMOS

• III-V & Ge (John Carruthers)• Semiconductor Nanowires (Ted Kamins)• Graphene (Daniel Beneshal)• Carbon Nanotubes (Jean Dijon)

Alternate Channel Materials Evaluation

Capability

Demonstrated High Mobility in n-

channel

Demonstrated High Mobility in p-

channelProperty Control

(Eg, etc.)

Gate Dielectric Compatibility &

Control

Low Contact Resistance & Variability

CMOS Compatibility

Control of Location & Direction

Surface Passivation

Research Target >5000cm2/ V-sec. >5000cm2/ V-sec. 10% (1σ)

Unpinned Fermi Level, 10% thickness (1σ)

Comparable to CMOS

Depends on Device Structure, Process

Architecture & Integration 10% of Half Pitch < 1e11cm-3

III-V Ge

Graphene Bi-Graphene

SW CNT

Nanowires

Average #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF!StdDev #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF! #REF!

Logic Device Materials



III-V Ge Alternate Channel Partition Proposal

ERM

Materials, Interfaces & Process Issues & Challenges

Critical Assessment of Materials & Integration Capabilities

ERD

Integrated Device Performance Assessment & Challenges

Critical Assessment of Device Performance

PIDS

III-V & Ge Potential Solution

Collaborate with ERD on device Readiness

FEP

Potential HVM Manufacturing issues


Work in Progress: Not for Distribution12

Production Ramp-up Model and Technology Cycle Timing

Volu

me

(Par

ts/M

onth

)

1K

10K

100K

Months0-24

1M

10M

100M

AlphaTool

12 24-12

Development Production

BetaTool

ProductionTool

First Conf.

Papers

First Two CompaniesReaching

Production

Volu

me

(Waf

ers/

Mon

th)

2

20

200

2K

20K

200K

Source: 2005 ITRS - Exec. Summary Fig 3

Fig 3 2008 - Unchanged



Next Steps

• Key Items to Resolve before March ITRS– ERM Assessment Criteria

• Establish Research Targets

– Review ERD Criteria– PIDS Draft Potential Solution Statement– FEP Draft HVM Capability Requirements



Fundamental Alternate Channel Common Question

• Does ballistic transport dominate over intrinsic mobility?



III-V & Ge Key Messages

• Gate Dielectric Growth techniques are being developed – Current Approaches (III-V):

• MBE Growth of III-V/Ga2O3/GdGaO Stack (Freescale)• As Cap/ In situ As decap +ALD HfO2 (Stanford)• NH4OH-ALD Al2O3 or HfO2 on III-V (Purdue)• InAlAs Barrier (MIT)

– Current Approaches (Ge):• GeOxNy Nitridation (Stanford)• Ozone Oxidized Ge + ALD High κ dielectric HfO2 (Stanford) • LaGeOx-ZrO2(Ge) High K (Dual Logic)

• Controlling surface oxide formation is critical for control of interface states– Control of interface stochiometry, structure and defects is critical– GeOx stochiometry control affected by growth temperature



III-V & Ge Key Messages

• Ge dopant activation requires high temperature – Incompatible with III-V process temperatures

• S/D Contact Formation Current Approaches:– Ge

• P-MOS: Boron with many ohmic metal contact options

• N-MOS: Dopants have high diffusivity & metals schottky barriers

– III-V• W contact/InGaAs cap/InAlAs (MIT)

• Are barriers needed to keep dislocations out of the channel?



III-V Ge Heteroepitaxy Challenges

• Reduction of dislocation densities• Control of stress in III-V & Ge integrated on Si

– Ultrathin films– Heterostructures to reduce defects

• Effect of antiphase domains on carrier transport

• Identify a crystal orientation that favors epitaxy and interface states.



Graphene Challenges & Status

• Ability to deposit graphene on appropriate substrates

• Producing a bandgap– Fabricating Narrow Graphene Lines– Applying a high electric field to bi-graphene

• Achieving high mobility in an integrated structure

• Achieving a high on-off conduction ratio



Graphene Deposition

• CVD of Graphene on Ni, Pt, and Ir– Graphene is strongly bonded to Ni, but has a lattice match– Graphene deposited on Pt is not distorted, is not lattice matched,

but is weakly bonded• SiC decomposition

– Issue: High process temperature (>1100C)• Exfoliation Techniques

– Graphene Oxide Decomposition (Mobility <1000cm2/V-sec)• Oxidation process produced islands of graphene surrounded by

disordered material (hoping conduction)– Try less aggressive oxidation process

– Solvent exfoliation• Solvents capable of separating graphene sheets are difficult to

evaporate (high boiling point)– Tape exfoliation



Producing a Graphene Bandgap

• Fabricating Narrow Graphene Lines– Requires patterning sub

20nm lines– Edge defect control is

challenging (Eg & Mobility)

• Applying a high electric field to bi-graphene– Field ~1E7 V/cm



Graphene Mobility

• Mobility on substrates is reduced

• Graphene Oxide Mobility – Degraded by disordered

regions



Beyond CMOSM. Garner

• Molecular State (Alex Bratkovski & Curt Richter)• Spin Materials (In-Yoo / Kang Wang)

– FM Semiconductors– CNT & Graphene– Tunnel Barriers– FM metals– Multiferroics

• Complex Metal Oxides (TBD)– Ferroelectrics (Memory)– Tunnel Barrier



ERM Beyond CMOS Scope: 2009

2007 Transition In Transition Out 2009

Molecules & Interfaces

Transition out? Inadequate progress

Status

FM Semiconductors

Curie Temp Table

Tc Graph

FM Oxide Semiconductors

Status, Table or Graph

Spin Semiconductor

Status

Spin Barriers Status

Multiferroics Status

FM Metals Status



ERM Beyond MOS Memory: 2009 2007 Transition In Transition Out 2009

Complex Metal Oxide Resistance Change

Status

Oxides & Interfaces FE Memory

Status

Nanotube for Nanomechanical memory

Status

Molecules & interfaces for Molecular Memory

Transition out? Status

MRAM Materials Status

Ionic Transport Materials



Molecular Devices

• Top contact formation is still a significant issue

• Determining that switching is due to the molecular energy levels is difficult



Spin Materials

• Ferromagnetic III-V (Mn) semiconductors have verified Curie temperatures 100-200K– Carrier mediated exchange

• Nanowires of GeMn have reported ferromagnetic properties at 300K+, but carrier mediated exchange with gated structure is difficult to verify

• Oxides doped with transition metals have ferromagnetic properties– Ferromagnetism is determined by carrier doping, but it isn’t

clear whether this can be modulated with electric fields– Ferromagnetism is proposed to be in an impurity band vs.

the oxide bands.– It is not clear whether this is useful for device applications



Spin Materials (Cont.)

• Spin Tunnel Barrier Materials– MgO crystalline material is the best spin selective tunnel

barrier to date• May work with a limited number of materials due to lattice

match requirement

– Films must be ~9A thick– Al2O3 films work, but with much lower selectivity

• Multiferroics– BaFeO3 has ferroelectric & antimagnetic properties coupled

• Limited degrees of freedom & low coupling



ERM for Lithography(Dan Herr & Joe Gordon, Atsushi Shiota)

• ERM for Patterning – Novel Macromolecules for Resist

• Multi wavelength resist (Dual exposure) (Transition in?)• Pixellated resist

– Novel Macromolecules for Contrast Enhancement Layer• Multi wavelength CEL (Dual Exposure) (Transition in?)

– Novel molecules for Non CAR (TBD at Workshop)– DSA Materials– Imprint molecules (Transition? )

• Functional materials

• ERM for Immersion Fluids – Nanoparticles for immersion fluids (Transition Table?)



Litho July ‘08– General:

• ERM requested confirmation of timing, metric families, and quantitative metrics

– 3rd generation immersion lithography technology:• There was considerable discussion on this topic;• Concern was expressed that this technology may be pushed out too far

to meet required insertion windows;• 2012 insertion appears unlikely • It was agreed that the ERM WG would wait for the Litho TWG to

address this issue and make a recommendation; – Novel macromolecules for resist applications:

• Use the same criteria as is used for resist. – Increased interest in intermediate state photochemistry, chemical

image enhancement, two photon patterning, imprint, optical threshold layers, and non-CAR systems

– Nanoparticles:• Drop the optics abrasion requirement, since this would be a difficult

property for the university research community to characterize; – Directed self assembly for patterning applications:

• The Lithography ITWG reviewed the DSA research requirements and agreed to provide feedback at a later date.



ERM Litho Scope: 2009 2007 Transition In Transition Out 2009

Resist Molecular Design

To Litho TWG

Molecular Glasses To Litho TWG

Directed Self Assembly

Assess

Dual Wavelength Resist Molecules

Into ERM Assess at WS

Dual Wavelength CEL Layer Molecules

Into ERM Assess at WS

Non-CAR Molecules

Into ERM Access at WS

High index Immersion Fluids

Transition out? TBD

Imprint Molecules

Imprint Resist?

Evolutionary, Remove?

TBD



ERM Lithography Critical Assessment



ERM workshopNovel chemical system for advanced lithography / conjunction

with SPIE advance lithography 2/28 @ Intel Santa Clara

• Scope– Identify new molecular architectures and chemical/physical mechanism

to support beyond hp15nm lithography. – Exclude discussion of conventional immersion extension, chemical

amplified EVU system, direct self-assembly and nanoimprints. these topics are covered by separate workshops.

• Topics for Discussion– Potential Resist Materials

• Non-CAR, Negative tone MG resist or organic/inorganic resist– Double Exposure materials

• IST/CEL/OTL– Unconventional materials for single exposure– Resist characterization/process improvements– Lithography Simulations/Lithography physics



Potential Speakers and AdvisorSpeaker/Advisor Status Current Research Potential Topic for ITRS ERMBruce Smith (RIT) Accepted Simulation/193 extensions Lithography Physics

Tagawa Positive EUV/E-beam/Simulations E-beam/SimulationSteve Kuebler (university

of Florida)Declined Two Photon Materials

Grant Willson Accepted Non-CAR/DE/NIL Non-CARChris Ober Accepted Non-CAR/PAGs/MG

Cliff Henderson (GeorgiaTech)

NA Negative toneMG/MGPAGs/Processing

Negative tone MG

Wen-Li Wu (NIST) Positive Future litho Methodology New MethodologyBob Allen/IBM Accepted Advanced Resist Materials 193/EUV

Yan Borodovsky/Intel Accepted DE materials Litho Road Map/SimulationsJames Blackwell/Todd

Younkin (Intel)Accepted DE materials/EUV rCEL/Two stage PAGs:

Development Process for RLSConsortia Paul Zimmerman/Sematech

Austin /IntelAccepted DE materials in collaboration

with Grant WillsonISTP/OTL

ResistSupplier

Fuji Film Declined Negative tone imaging withdevelopment process

ISTP/OTL

Industry

University

Nicolas Turro (Columbia) NA ISTP Materials in collaborationwith Grant Willson



ERM for FEPDan Herr

• Deterministic Doping– Research Equipment Options– Self Assembly Driven

• Selective Etches & Cleans– Research or Engineering?

• Selective Deposition



FEP July ‘08– General:– FEP will provide feedback on specific material assessment criterion

• For selective deposition processes:– Focus on techniques to deposit graphene on silicon and processes for

selective deposition of III-V compounds – Graphene:

• Assess cleaning chemistries, processing, and edge passivation – III-V Alternate channel materials:

• Assess cleaning chemistries, processing, and edge passivation – Directed self assembly:

• Establish deterministic doping targets and requirements– Dielectric materials:

• Establish and assess projected high- research requirements for the DRAM capacitor, especially at projected film thicknesses

• The current FEP requirements table shows that the dielectric constant is projected to reach 120, and then decrease to ~90, which appears to be unrealistic. FEP will resolve this apparent inconsistency.

– Spin materials:• Add to FEP’s ERM assessment tables



ERM FEP 2009 Scope2007 Transition In Transition Out 2009

Directed Self Assembly (DSA) for Deterministic Doping

Status

Shuttered Implant for Deterministic Doping

Into ERM Status & Challenges

DSA Selective Deposition

Status & Challenges

DSA Selective Etch Research or Engineering?

Status & Challenges

DSA Selective Cleans

Research or Engineering?

Stats & Challenges



Deterministic Doping Approaches

• Precision ion implantation• Scanning Tunneling Microscope Dopant

Placement• Langmuir self assembly & deposition of

dopants



InterconnectsYuji Awano

• ERM for low impedance interconnects & Vias– CNTs– Nanowires– Graphene

• ERM for Low κ ILD– Macromolecules (Dan check with Scott List)

• Selective Etch & Deposition



July ’08 Interconnect

– General:• To ensure a meaningful comparison, standardize metrics for each application,

across the set of candidate materials, e.g. CNTs, graphene, and nanowires for interconnect applications

– Add Chris Case to the ERM Distribution list – Alternate channel materials:

• Focus on contact materials for Ge and III-V materials. • Contact resistance and S/D leakage are critical properties that need to be

addressed – CNTs for Interconnects:

– Separate this topic into via and planar interconnect applications – CNT interconnects must have a conductivity at least 2X greater than copper

• Graphene Interconnects: – Determine the width and layer thickness dependence of the conductivity

– Novel Barrier Layers:• Target barrier layer thicknesses of 1-2 atomic layers• It is imperative to realize low process integration complexity• Barrier material candidates must provide a good diffusion barrier to Cu



ERM Interconnect Scope: 20092007 Transition In Transition Out 2009

Nanotube Interconnects

Assess

Nanowire Interconnects

Assess

Nanotube Vias Assess

Nanowire Vias Assess

1-2 monolayer barriers

ERM Assess

Macromolecule Low K ILD

Transition Table? Status

DSA Etch Transition? Status

DSA Selective Deposition

Transition? Status



10 100 10000

1

2

3

4

5

sidewall

grain boundary

bulk resistivity

Res

istiv

ity [µ

cm

]

Line width [nm]

Emerging Interconnect ApplicationsVias Multi-wall CNT Higher density Contact Resistance Adhesion

Interconnects Metallic Alignment Contact Resistance

Dielectrics Novel Polymer ILDs

Y. Awano, Fujitsu

H. Dai, Stanford Univ.

Quartz Crystal Step Alignment

Ref. 2005 ITRS, INT TWG, p. 22

ERMs Must Have Lower Resistivity

Cu



Assembly & PackagingNachiket Raravikar ?

• ERM for Thermal Heat Spreading• Low Temperature Assembly

– Lead free• Chip to Package Electrical Interconnects• Controlled polymer properties

– Application– Process– Operation– Bromine Free

• High Performance Package Capacitors• Energy & Bio Application requirement & status will be

descriptive in 2009



July:ERM WG - Assembly and Packaging ITWG:

• CNTs for thermal interface Applications: – Critical metrics: Low contact resistance and CNT density – Even though this technology is low on the learning curve and commercial viability

usually ranks as a low priority metric during the exploratory phase of research, researchers are encouraged to consider cost implications as one of several critical success factors for assessing the potential maufacturability of the CNT TIM;

• Oxide nanoparticles for package filler applications:– Add biocompatibility and assess cost implications

• Nanometal for chip attach applications:– Include the following additional families of requirements: melting point, electrical

conductivity, electromigration resistance, stress relief, inter-metallic formation, and properties, as needed, for predictive modeling.

• Macromolecules for polymer adhesion applications to different materials: – Add water absorption (free), CTE, modulus, bonding, and debonding

• Complex metal oxides: – Add dielectric constant at minimum thickness and charge leakage

• Assembly & Packaging Priorities for e-Workshops were: – Priority #1: Assembly & Package Dielectrics High and Low K materials– Priority #2: Nanocomposite moisture barriers and adhesion materials– Priority #3: Low temperature assembly materials & nanowires– Priority #4: Carbon Nanotube thermal Interface materials



ERM A&P Scope: 20092007 Transition In Transition Out 2009

Nanotube Electrical Interconnects

Status

Nano solders Status

Nanocomposite package polymers

Status

High density, high performance capacitors

Status

Nanotube thermal interface materials

Status

Low assembly temperature materials (ACF?)

Add to ERM (?) Status Ag Nano ACF

Nanowires for Power & Detectors

Add to ERM Status



ITRS 2008 ERM A&P Workshops: key learnings

Nachiket Raravikar & Raja, Yuji Awano

Intel Corporation

September 2008



• Title: CNT Interconnects & Thermal Challenges– Focus: Update the progress in assembly compatible integration &

contact resistance control of CNT for interconnect and thermal applications

– Teleconference [Apr-May’08]• Prof. Banerjee, UCSB [May’08]• Prof. Majumdar, UC-Berkeley [Aug’08]

Focus area 1: CNT

Organizer: Nachiket Raravikar



CNT TIM workshop summary

• The following two still remain challenges in CNT TIM applications:1. Controlling CNT array density

- Best density up to ~ 1010 – 1011/cm2 achieved by optimizing the catalyst under-layer thickness;

- It’s not clear what the target density should be and whether an array density higher than the above could be achieved

2. Increasing bonding or wetting of CNT with Si, SiO2 and metals to lower thermal interface resistance

- Lowest thermal interface resistance achieved by In coating of CNT:

Interfacial conductance [glass-In-CNT-Si]: 3.1±1.5 MW/m2∙K as compared to Glass-CNT-Si: 0.075±0.005 MW/m2∙K

- Issue of In wetting on CNT remain- Not many strategies exist on improving thermal interface

conductance between CNT-Si or CNT-metals- Realistic targets of experimentally achievable interfacial

thermal conductance need to be defined



CNT summary

The following has been achieved...• Low electrical contact resistance, close to theoretical value, has

been achieved experimentally• High frequency response of nanotubes (impedance, inductance, skin

effect) has been modeled and skin effect is predicted to be negligible

• Some progress towards achieving high density CNT arrays 1010 – 1011/cm2

• In-CNT interface shown to reduce thermal interface resistance

The following challenges or unknowns still remain...• Low T CVD growth of CNT• Increasing CNT array density• Reducing CNT electrical and thermal contact resistance•



• Title: Polymer nano-composites mechanical, rheological challengesFocus: 1. Adhesion: Update progress in interfacial adhesion control

between nanoparticles and matrix as well as between polymers and metals;

– 2. Multifunctionality: high toughness, low CTE, high/low modulus, flow properties etc. using nano-fillers;

– 3. Moisture diffusion barriers: block moisture diffusion for regular as well as MEMS packages

– Teleconference• Prof. Giannelis, Cornell [Aug’08]

Focus area 2: Polymer Nano-composites

Organizer: Nachiket Raravikar



Macromolecules/nano-composites workshop summary

• Adhesion improvement with nano-composites– Adhesion enhancement is shown with nanocomposites, however the

mechanism is not well understood (nanoclay composite to Silicon)• Nano-composite mechanical property enhancement [modulus, CTE,

toughness, elongation]– Decoupling of properties (stiffness-toughness) is a very attractive

feature of nano-composites and has been demonstrated with various composite systems

– Hypotheses of toughening of nano-composites are in place: nano-particle migration to crazes to prevent crack propagation; hypothesis validation is not done yet

• Nano-composite moisture absorption– Relative permeability is shown to drop significantly at very small

volume fractions of nanoparticles [silicates]• Dispersion, interface tailoring of nano-fillers with polymer matrix

– Various surface chemistries demonstrated to improve dispersion of nano-silica (particles or clays) in composites: epoxy silica, amino silica, HMDS silica

– Dispersion issues still remain such as intercalation or exfoliation of clay or nano-particle clusters, delamination at filler-matrix interface



ERM for Low Assembly Temperature

• 10nm SnAg Melting point reduced to 194C – Surfactant passivation required– Formed good solder joint with 230C reflow

• 10nm SnAgCu melting point reduced to 199C– Surfactant passivation required

• Nanosilver based ACF sinters at <200C– Improved contact resistance– Increased current carrying capability– Integrated self assembled monolayer improved adhesion



ERM ESH Needs (July ’08)M. Garner & J. Jewett

– Jim Jewett and Mike Garner agreed to write a white paper on NanoEHS needs to attach to the ITRS ESH & ERM chapters.

• Toxicology research integration and summary

– Dan Herr recommended that the ESH-ERM communities consider driving the energy and health related opportunities that are emerging from the ITRS Functional Diversification agenda.

• This may enable the ESH community to get ahead of regulation, as functional diversification may provide enabling energy and health opportunities and enable the industry to leap frog over, remove, and/or avoid emerging issues.



• Develop timelines for intercept commerce• Regulatory Processes

– What is the

• Research Timelines– Resolution of Acute & Chronic Issues– Klebosol example

• WSC (?)



Metrology NeedsYaw Obeng & Alain Diebold

• Korea ERM asked for Reference Material needs to be added



Metrology July ‘08

– The ERM – Metrology collaborative engagement continues to increase

– No new issues were identified by the ERM, except the need for nanoscale graphene characterization

– For example, Alain identified a number of new physical effects under study in graphene, including electron “puddling”.



ERM Metrology Gaps and RequirementsERM Metrology Gaps and Requirements



Modeling NeedsSadasivan Shankar



Modeling July ‘08

– The scope of the Modeling ITWG was discussed and its relationship with the ERM WG.

• While much of the ERM focus lies outside the current focus of the M&S ITWG, emerging materials will require considerable application related modeling that will serve as a bridge to the design community, i.e. compact models.

– More discussion is needed, especially with respect to :– ERM related metrology, compact models, application

specific material models, such as the dielectric constant of thin high-complex metal oxides and the unique domain structures of mixed phase segregated block copolymers.

– Modeling is needed to extract critical information from parallel metrology measurements and to decouple nanometer scale physical interactions

• This should topic be included in ERM – M&S discussions



Needs in Materials Modeling

• Extension to larger scales for equilibrium calculation and temperature dependence of properties and processes– Gaps in ability to model integrated systems

• Metallic systems specifically transition and inner transition metals. – Need specific functionals that could be tested with more rigorous

techniques,• More generalized extension for band gaps

– Currently hybrid and metal functionals are being developed but need to be thoroughly characterized

• Strongly correlated systems require model development to explain the interaction between spin, charge, and lattice changes for potential use in spin wave propagation. – Requires quantification of the energy associated with spin switching and

transport and the identification of speed limitations. • Extension or linking of quantum models from femtoseconds to

microseconds or longer to emulate realistic synthesis and transport.

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ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging...

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