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Notes for ECE-606: Spring 2013 Energy Band Essentials Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA [email protected] 1 1/29/13 Lundstrom ECE-606 S13 2 Steve Chus advice Learning science and thinking about science or reading a paper in science is not about learning what a person did. You have to do that, but to really absorb it, you have to turn it around and cast it in a form as if you invented it yourself. … How do you do that? … try to internalize it in such a way that it really becomes intuitive.
Transcript

Lundstrom ECE-606 S13

Notes for ECE-606: Spring 2013

Energy Band Essentials

Professor Mark Lundstrom

Electrical and Computer Engineering Purdue University, West Lafayette, IN USA

[email protected]

1 1/29/13

Lundstrom ECE-606 S13 2

Steve Chu’s advice

“Learning science and thinking about science or reading a paper in science is not about learning what a person did. You have to do that, but to really absorb it, you have to turn it around and cast it in a form as if you invented it yourself. … How do you do that? … try to internalize it in such a way that it really becomes intuitive.

Lundstrom ECE-606 S13 3

free electron

E

U = 0

x→ +∞−∞← x

ψ x, y, z( )∝ e+ ikxxe± iky ye± ikzz

ψ x, y, z( )∝ e− ikxxe± iky ye± ikzz

Lundstrom ECE-606 S13 4

electron in a very large box E

x =Wx = 0

U =U0U =U0

ψ x, y, z( )∝ sin knx( )e± iky ye± ikzz

U = 0

εn =

2n2π 2

2m*W 2

W >>> a

εn <<< kBT q

L >>> a

L <<<W

Lundstrom ECE-606 S13 5

electron in a very large box E

x =W

U =U0U =U0

x = 0

ψ x, y, z( )∝ e± ikxxe± iky ye± ikzz

U = 0

Lundstrom ECE-606 S13 6

electron in a very large box E

U =U0U =U0

L >>> a

L <<<W

ψ x( )∝ e± ikxx → u x( )e± ikxx

u x( )

x = 0 x =W

u x( ) = u x + a( )

Lundstrom ECE-606 S13 7

bulk semiconductor, x-direction

( ) ( ) xik xkx u x eψ =

, xx k0 xL

( ) ( )0 1x xik LxL eψ ψ= → =

2 1,2,3,...x xk L j jπ= =

2x

x

k jLπ=

2

xLπ

dk

( )# of states 22

xk

x

dk N dkLπ

= × =

= = density of states in -spacexkLN kπ

xk aπ=

Lundstrom ECE-606 S13 8

counting states

( ) ( ) xik xkx u x eψ =

, xx k

0 xL

( ) ( )0 1x xik LxL eψ ψ= → =

2 1,2,3,...x xk L j jπ= =

2x

x

k jLπ=

2

xLπ

dkx

x AL N a=

2 2x

x A

jk jL a Nπ π= =

2xA

j xik x iN a

θ π⎛ ⎞

= = ⎜ ⎟⎝ ⎠

max Aj N= max2kaπ=

0 xkaπ+aπ−

Lundstrom ECE-606 S13 9

density of states in 1D

x

yz

N = f0

k∑ Ek( )

( )01

L k xj BZ

n f E dkπ

=∑ ∫( ) -10

1 cmx

L kkx

n f EL

= ∑

sum over subbands

=22kL LNπ π

⎛ ⎞× =⎜ ⎟⎝ ⎠Lx

nL =

1Lx

f0 Ek( ) Nk dkxBZ∫

Lundstrom ECE-606 S13 10

density of states in 2D

x

y

z

A

t

( )0 kk

N f E=∑r

nS =

j∑ 1

2π 2 f0 Ek( ) dkx dkyBZ∫

nS =

1A

f0k∑ Ek( ) cm-2

2 2=24 2kA ANπ π

⎛ ⎞× =⎜ ⎟⎝ ⎠

Lundstrom ECE-606 S13 11

density of states in k-space

Nk =2 ×

L2π

⎛⎝⎜

⎞⎠⎟=

Nk =2 ×

A4π 2

⎛⎝⎜

⎞⎠⎟=

A2π 2

Nk =2 ×

Ω8π 2

⎛⎝⎜

⎞⎠⎟=

Ω4π 3

1D:

2D:

3D:

dk

x ydk dk

x y zdk dk dk

12

recap 1) Within any finite region with N atoms, we have N discrete k-

states. 2) When the region is large, the allowed k’s are spaced VERY

closely, so we can integrate rather than sum (using the density of states in k-space).

3) We know the allowed k-states, but to get the allowed

energies, we must solve the wave equation for the given crystal potential, u(x).

4) But the unique solutions are all contained in a Brillouin zone

(0 to 2pi/a, or –pi/a to +pi/a, or in a more complicated volume of k-space in 3D. Lundstrom ECE-606 S13

Lundstrom ECE-606 S13 13

solving the wave equation

−2

2m0

∇2 + u r( ) + q2ψ j

* ′r( )ψ jr( )

r − ′rd ′τ∫

j≠ i∑

⎣⎢⎢

⎦⎥⎥ψ ir( ) = ε iψ i

r( )

ψr( ) = u r( )ei

k ir

u r( ) = u r +

R( )

1)  Pick a k 2)  Solve for the eigen energies

E

kx−π a +π ak1

(Hartree approximation)

Lundstrom ECE-606 S13 14

bandstructure

(“Bandstructure Lab” at www.nanoHUB.org)

silicon GaAs

15

model bandstructures

silicon

100< >111< >

L X1.12eV

hh

lh *00.16lhm m=

*00.49lhhm m=

*00.92m m=l

*00.19tm m=

kr

E k( ) = EV −

2k 2

2mp*

E

GaAs

100< >111< >

L X1.42eV

hh

lh

*00.063m m=

E

kr

Lundstrom ECE-606 S13

16

GaAs model bandstructure GaAs

100< >111< >

L X1.42eV

hh

lh

*00.063m m=

E

k

E k( ) = EC +

2k 2

2mn*

k 2 = kx

2 + ky2 + kz

2

E k( )− EC =

2 kx2 + ky

2 + kz2( )

2mn*

The constant energy surface for the conduction band is a sphere in k-space. Lundstrom ECE-606 S13

17

Si model bandstructure

E k( ) = EC +

2 kx2 + ky

2( )2mt

* +2kz

2

2m*

The constant energy surface is an ellipsoid in k-space.

100< >111< >

L X1.12eV

hh

lh *00.16lhm m=

*00.49lhhm m=

*00.92m m=l

*00.19tm m=

kr

E

E k( ) − EC =

2kt2

2mt* +2kz

2

2m*

Lundstrom ECE-606 S13

Lundstrom ECE-606 S13 18

bandstructure of graphene

http://www.szfki.hu/~kamaras/nanoseminar/Reich_Stephanie-85-100.pdf

(CNTBands on www.nanoHUB.org)

Lundstrom ECE-606 S13 19

E(k) for 606

E k( ) = ±υF k

k

E

k

E

E k( ) = EC +

2k 2

2mn*

E k( ) = EV −

2k 2

2mp*

Lundstrom ECE-606 S13 20

E(k) for graphene

E k( ) = ±υF kx

2 + ky2 = ±υF k

xk

E

For graphene:

υg

k( ) =υF

υg

k( ) = 1

dE k( )dk

Recall:

m* = 1

2

d 2E k( )d 2k

⎝⎜

⎠⎟

−1Also recall:

For graphene:

m* = ?

yk

2Vg =

21

E(k) or dispersion

E

k

E k( )

υg k0( ) = 1

dE k( )dk

k=k0

k0

Lundstrom ECE-606 S13

Lundstrom ECE-606 S13

density of states in k-space

nS =

1A

f0k∑ Ek( )→ f0

BZ∫ Ek( )Nk dkxdky

Nk =2 ×

A4π 2

⎛⎝⎜

⎞⎠⎟=

A2π 2

22

Lundstrom ECE-606 S13

density of states in energy space

nS =

1A

f0k∑ Ek( )→ f0

EBOT

ETOP

∫ Ek( )D E( )dE

Nk dk = D E( )dE

23

24

density-of-states in energy

E

k

dk

2 Lπ

2k 2

2m*

dE Nkdk = dk

L 2π( ) × 2

Nkdk = D E( )dE

Lundstrom ECE-606 S13


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