Final Thesis Format

8/17/2019 Final Thesis Format

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CHARACTERIZATION OF AUTOMATICDECAPSULATION SYSTEM FOR

PLASTIC PACKAGING

MOHD KHAIRUDDIN BIN MD ARSHAD

SCHOOL OF MICROELECTRONICENGINEERING

UNIVERSITI MALAYSIA PERLIS

2014

CHARACTERIZATION OF AUTOMATIC

DECAPSULATION SYSTEM FORPLASTIC PACKAGING


2/22

by

MOHD KHAIRUDDIN BIN MD ARSHAD

SCHOOL OF MICROELECTRONIC

ENGINEERINGUNIVERSITI MALAYSIA PERLIS

MARCH 2014

APPROVAL AND DECLARATION SHEET

2


3/22

This project report entitled Characterization of Ato!atic Decapslation for

Plastic Pac"a#in# $as prepared and s%!itted

&'

(ohd )hairddin &in (d Arshad

Stdent*s (atric N!%er

has %een fond satisfactor' in ter!s of scope+ ,alit' and presentation aspartial flfill!ent of the re,ire!ent for the

Diplo!a En#ineerin# -(icroelectronic En#ineerin#.

in /ni0ersiti (ala'sia Perlis

-/ni(AP.1

Chec"ed and Appro0ed %'

22222222222222222222222

-(/HA(AD NASIR &IN (/RAD.

Project Sper0isor

School of (icroelectronic En#ineerin#

/ni0ersiti (ala'sia Perlis

(arch 3445

Ac"no$led#e!ent

3


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First and foremost, I acknowledge my Allah S.W.T, who gives me peace

and hope. I see science as an investigation into the mysteries of creation.

To my friends and family, thank yo for spporting me dring my time

here. !or nderstanding, love, and encoragement were invala"le to me.

I wold like to thank my spervisor #r $osydi %in &akaria for his

encoragement, spervision and spport that made this thesis possi"le. 'e has "een

a wonderfl mentor throghot my stdy and personal life in (ni#A). 'e had

taken a lot of efforts to meticlosly go throgh my report and came p with

helpfl sggestion. Withot helping from him, srely came into deep pro"lem in

completing this thesis. I am very glad to have him in my committee.

Also thank to all technition at Institte *ano +lectronic +nginnering

I*++- and (ni#A) cleanromm, #r.'afi and mem"ers, #r.'asrl and

#rs.Amira for training me on all the instrments that I needed to make this thesis

sccessfl

Finally I wold like to thank yo to the rest of the F!) grop mem"er/

A0im, )amek, Fitri, 'asrl, Farahin, and Ili. 1oing throgh these difficlties

together helped s accomplish more than we cold have alone. I appreciate each

of yo and the spport yo have given me.

ist of Ta"les

PRO6ECT TITLE -IN (ALA7.


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A&STRACT

. Short !tro"#$to! to th% &ro'%$t th(t )o# h(*% "o!% {It is

normally covered in 2 to 3 sentences. It is not to introduce what

will be done, what has not been done and the objectives of the

project}. This is followed by a +r%, (!" $o!$-% "%-$r&to! o,

th% &ro'%$t .&/%.%!t(to! {It is a summary from chapters

‘.%tho" o, !*%-t(to! or ‘"%t(/- o, th% "%-!. It caninclude the operation of your project in brief. !odel numbers of

speci"c or rare items #hardware or software$ can be mentioned.

Th- &(rt - /.t%" to 100 or"-}. %e&t, is -#..(r) o,

.&ort(!t or -!$(!t r%-#/t- (!" "-$#--o! {It comes

from ‘results and discussion chapter. Th% r%-#/t- or "(t( (!"

th% "-$#--o! $(! +% $o.+!%" (!" &r%-%!t%" ! th- &(rt.

'i(ni"cant data from ‘conclusion chapter is (iven here.

Notes:You may write your abstract only in ONE (1) paragraph. It isimportant to note that abstract is written in a case by case basis.However, a typical format can be useful as a guide or referencefor you to write your project report abstract.

Abstract CANNOT be included with the items below:

1. Issues related to personal feeling, e.g. learned a lot of thingsfrom this project

2. irst and second person pronouns !I, we, you, me, my, etc."#. $utline of chapters in your project report %. &ny issues that are not produced from your project !e'cept

comparison cases with another person(s wor)"*. igure+ables.-. athematical formulae.

)ne and halfspacin(, font*2 Times %ew+oman#not more than 2 words$

4


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TA&LE O8 CONTENTS

Ac"no$led#e!ent333333333333333333333333333333333333333333333333333333333333333*

List of Ta%les3333333333333333333333333333333333333333333333333333333333333333333333

List of 8i#res33333333333333333333333333333333333333333333333333333333333333333333

Chapter 9333333333333333333333333333333333333333333333333333333333333333333333333331

INTROD/CTION33333333333333333333333333333333333333333333333333333333333333331

5.5 Introdction................................................................................................................................

913 Pro%le! State!ent...................................................................................................................

5.3 )ro0ect 6"0ective........................................................................................................................

5. )ro0ect Scope.............................................................................................................................

5.4 $eport strctre..........................................................................................................................

5.7 $eeport s 2.................................................................................................................................

Chapter 3 33333333333333333333333333333333333333333333333333333333333333 5

LITERAT/RE REVIE:333333333333333333333333333333333333333333333333333333335

2.5 Introdction................................................................................................................................

2.2 Introdction of %iosensor..........................................................................................................

2.2.5 Why %iosensor ....................................................................................

2.3 +lectrical characteriation techni8e.........................................................................................

Chapter ;333333333333333333333333333333333333333333333333333333333333333333333333336

(ETHODOLO


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RES/LTS AND DISC/SSION333333333333333333333333333333333333333333333333310

.5 Introdction..............................................................................................................................5;

.2 6ptical $eslts.........................................................................................................................5;

.3 :hapter smmary.....................................................................................................................5;

Chapter >33333333333333333333333333333333333333333333333333333333333333333333333311

CONCL/SION ? DISC/SSION333333333333333333333333333333333333333333333311

4.5 :onclsion...............................................................................................................................55

4.2 Ftre work..............................................................................................................................55

Appendi@ A 12

References 15


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List of Ta%les

Ta"le 2.5 / S"strate sed for acostic wave generation =52>...............................................-

?


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List of 8i#res

Figre 2.5/ Sensor system.........................................................................................

Figre 2.4/ Strctre of electrode transdcer a- Single electrode transdcer "-

Split electrode transdcer =@>....................................................................4

Figre 3.5 Flow :hart of I9T %iosensor process....................................................?

8i#re ;13 $afer checking........................................................................................@

@


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9

INTROD/CTION

Introdction

In the past two decades, the "iological and medical fields have seen great

advances in the development of " iosensors and "iochips capa"le of

ch ar ac ter i in g and 8a nti fyi ng "io molecles.

The "io moleclar is something that cannot "e detected with the naided

eye, smell, or taste. So to detect

919 Pro%le! State!ent

The motivation of this work is de to or passion to develop desira"ility for

more accracy, sensitivity and easy to analyse "iosensor for its se in medical field.

9esira"le characteristics of I9T srface acostic wave "iosensors are faster

response, high sensitivity, low cost, low insertion loss and more sta"ility. This

thesis focses on improving sensitivity "y decreasing loss and signal reflection.

#ain core of this research is to design I9T with different type and parameter.

Project O%jecti0e

ONE 718 space below #for another para(raph$


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The aim of this pro0ect is to fa"ricate and characterie Interdigital Transdcer

I9T- for Srface Acostic Wave SAW- "iosensor device. The specific o"0ectives

of this pro0ect are/

i. To stdy the inflence of I9T design parameter in a SAW "iosensor device

to its charateriation.

ii. To design mask of the I9T sing Ato:A9 for SAW device.

Project Scope

+Blain from yor o"0ective.. give smmaryCC.

Report strctre

Reeport s 3

This thesis is organied in sch a way that, in chapter 2 we will give all the

"asic terminology sed in acostic sensors. This helps for "etter nderstanding

a"ot the later part of the research. +ach chapter details are given "elow.

Chapter 3 will descri"e a"ot literatre review of this pro0ect in which The chapter

will eBplain more flly a"ot the pro0ect ndertaken. +ach component and part in

this pro0ect will "e descri"ed in greater depth and allDmethod method sed for this

pro0ect will "e descri"ed one "y one. This chapter is very important for

nderstanding the lectrer to pro0ect activities.


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3

LITERAT/RE REVIE:

Introdction

In this chapter, firstly it eBplains a"ot what is "iosensor and then the Srface

Acostic Waves technic. After that, it will eBplain a"ot, the strctre of

Interdigital Transdcer and for the final is operating in "iosensor and the related

information. All material written information in this chapter is taken from the

0ornals and resorces availa"le on the internet as a reference.

9 Introdction of &iosensor

At present time, the sensor has "egn to "e applied in varios fields,

ranging from hosehold appliances, medical devices, and in indstries sch as

atomotive, ship"ilding, and military e8ipment. Since sensors "ecome an

important technology in this centry, varios researches have "een condcted to

eBpand the area of applications of sensor technology in varios fields =5>.

A sensor works "y converting one form of energy into another form. Thiscan make sre that the information carrier signal which can "e read s"se8ently to

"e converted into sefl signals =2>. Sensor has three components consisting of two

transdcers and a signal processor, as shown in Figre 2.5.


13/22

8i#re 319 Sensor system

#easrand is represent the vale of inpt spply sch as fre8ency or

voltage. Transdcer compenant is fnction to convert the energy or fre8ency to

other form. The signal that had "een convert will "e process as will "e tranverse as

91919 :h' &iosensor

A "iosensor can "e defined as an analytical device containing an

immo"ilied "iological sensitive material enyme, anti"ody, antigen, organelles,

9*A, cells, tisses or organic molecles- in contact with or integrated within a

transdcer, which converts a "iological signal into a 8antitatively measra"le

electrical signal. For decade, many types of "iomoleclesE sensor have "een

developed =2>. This sensor had "een developed sing different methods and

techni8e, mostly "ased on radiochemical, enymatic, orescence,

electrochemical, optical, and acostic wave techni8es. At this time, most of

"iomolecle sensor predominantly are developed sing optical methods.


14/22

8i#re 313 Strctre of electrode transdcer a- Single electrode transdcer "-

Split electrode transdcer =@>

In order to design a SAW delay line, implse response I$- model is sed.

From the I$ model, the important design parameters as central fre8ency (f o) ,

nm"er of I9T finger NP), finger width and spacing "etween themW),

wavelength G-, and total capacitance Ct) can "e calclates =5;>. :entral fre8ency

can "e o"tain sing e8ation 2.5.

f o=Vs

λo

(2.1)

Where fo is central fre8ency, Vs an acostic velocity of pieoelectric

s"strate and λo is the wavelength. *m"er of finger, Np- can "e determine

sing e8ation 2.2

Np= 2 fo

NBW (2.2)

Ta%le 319 S"strate sed for acostic wave generation =52>


15/22

3 Electrical characterization techni,e

In over the year, there are many type of electrical characteriation techni8e

have "een developed to determine characteristic sch as resistivity, carrier

;

S"strate SAW

Helocity

vms-

K 2

J-

5stD6rder T:9

#ag. ppmK:-

:omments

STD8art/ 354? ;.5 ; (p to 24 cm long, $ef.

=27>.

!D& i*"63/ 3?? .4 @ (p to 24 cm long

52?K rotatedD!Li*"63/

3@@2 4.3

&n6Al*1lass/ 4?; .3 25 (ses seawa mode of

$ayleigh wave, $ef.

=4?>


16/22

Start

Sample and research material preparation

9esign in Ato:A9 software

Fa"rication )rocess

Starting with Si62, Al deposition, photolithography and etching process

Testing )rocess

'igh )ower #icroscope Inspection D+lectrical :haracteriation

D*etwork Analyer

:ompare the $eslt

+nd

$ework )rocess

(ETHODOLO


17/22

.

8i#re ;1; Flow :hart of I9T %iosensor process

9 (aterial Preparation

The material preparation "egins with the wafer specifications and

dimension verification as well as the identification the type of wafer that sed. The

starting material sed in this research is silicon with the following specification as

shows in Figre 3.2.


18/22

Silicon

Silicon

Type

6rientation

$esistivity

Thickness

9iameter

Silicon

Silicon

Silicon

SingleDside polished )%oron

O5D;D;P

;.;5D;.;2 ohmDcm low-

4;;Q5; Rm

5;; mm

8i#re ;1= $afer chec"in#

2 The &iosensor (as" Desi#n Process

In this %iosensor design consist of two masks, namely Interdigital

Transdcer mask and Sensing Area pad mask. First of all, the alignment mark will

"e design and places at the corner of the wafer mask. This alignment mark will

ensre the accracy of the alignment "etween actal wafer and mask. After

finishing the alignment markEs design, the Interdigital transdcer mask will "e

designed as the sie re8ired. The actal mask designs are all designed sing

Ato:A9 software and s"se8ently fa"ricated and transferred onto the

transparency.

13132 AtoCAD Soft$are

Ato:A9 software is often sed software to design the mask for fa"rication

process. This software can prodce drawing in 29 or 39 form and it prodces the

accrate designs according to the device sie. %efore the I9T drawing start, the

software is set at the micrometre scale according to the actal sie of the I9T.

There are several fnctions that are availa"le in this software that will "e sed in

=


19/22

RES/LTS AND DISC/SSION

Introdction

This chapter is all a"ot the reslt and discssion of the Interdigital

Transdcer "iosensor device. The reslt to "e addressed in this chapter is divided

Optical Reslts

As descri"ed in chapter 3, there are for types of I9Ts design had "een

developed in this pro0ect. +ach of this I9Ts design has its own parameter in term of

nm"er of finger and the arrangement of the I9T finger. This I9Ts was fa"ricated

in stages according to the flow chart of the fa"rication process that has "een made.

All images of the fa"ricated I9Ts is shows in Figre .5, Figre .2, Figre .3 and

Figre . respectively.

Figre .5 and Figre .2 show the conventional I9T design that known as

9esign 5 and 9esign 2. These two designs consist of single electrode finger

arrangement and the difference "etween this two designs is the nm"er of electrode

finger which is 9esign 5 consist of 5; nm"er of finger and 9esign 2 consist of 57

1 Chapter s!!ar'

The conclsion from this chapter is fa"rication process is re8ired high

skills when doing it. The time is very an important parameter in doing fa"rication

process especially in developer and etching process. The conse8ences do not

following the eBact time will affect the device pattern as happen to the sample that


20/22

>

CONCL/SION ? DISC/SSION

Conclsion

In this stdy of design and fa"rication of srface acostic wave I9T

"iosensor for "iomoleclar detectionE will "e presented. In this pro0ect the I9T with

different strctre are designed, fa"ricated and investigated for improve sensitivity

and sta"ility "iosensor.

C.. +Bplain from yor o"0ective-

8tre $or"

)otential ftre work areas are to fa"ricate I9T in difference design with

smaller sie than this stdy and to se other type of acostic wave for the "iosensor

device in order to increase the device sensitivity, sta"ility and redce the insertion

loss which gives "etter information in analysing sensor performance.

In this stdy, the device is 0st tested for the electrical characteristic. For the

ftre work, the device will "e tested for the network analyser and to test

immo"iliation for the "iomolecles detecting.


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Appendi@ A


22/22

References

=5> ohn Hetelino and Aravind $egh, Introduction to Sensors, :$: )ress,

Florida,2;55.

=2> Steven S. Saliterman, Fundamentals of BioMEMS and Medical

Microdevices,S)I+DThe International Society for 6ptical +ngineering,

Washington, 2;;7.

=3> ay W. 1rate, Stephen . #artin, $ichard #. White, Acoustic Wave

Microsensors Part 1, Analytical :hemistry, Hol. 74, *o. 25, 5@@3

=> #ichael . Hellekoop, Acoustic Wave Sensors and teir !ecnolo"#,

(ltrasonics, Hol. 37. pp. Antonio Arna Pie$oelectric !ransducers and Applications, Second Edition,

Springer, 2;5;=7> %ill 9rafts, Acoustic Wave !ecnolo"# Sensors, I+++ #icrowave Theory

and Techni8es, Hol. 2@, *o. , 2;;5.

= lian W. 1ardner, Hi0ay U. Haradan, 6sama 6. Awadelkarim, MEMS and

Smart %evices, ohn Wiley and Sons td, 2;;<

=?> ames Friend and eslie !. !eo, Microscale acoustofluidics& Microfluidics

driven via acoustics and ultrasonics, American )hysical Society, vol. ?3,

*o.2, pp.7

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