(GAMMA/TOTAL IONIZING OSE - NASA€¦ · FINAL TEST REPORT (Revision 1) Microsemi Power MOSFET...

Issue Date: 01 May 2007

FINAL TEST REPORT (Revision 1)

Microsemi

Power MOSFET (MSAFX11P50A)

(GAMMA/TOTAL IONIZING DOSE)

NAVSEA – Crane Radiation Sciences Branch, Code 6054, B3334

300 Highway 361 Crane IN 47522

Crane P.O.C: Jeffrey L. Titus

(812) 854-1617

NAVSEA Crane Radiation Test Report Final Report No.: NSWC-MS-MSAFX11P50A-GAMMA-050107 Revision 1

2

Approvals Stakeholder Name Organization & Role Signature Date

Document Change Control

Revision Number Date of Issue Brief Description of Change

Change Impact (pages & paragraphs)


3

Table of Contents 1.0 Executive Summary ........................................................................................................................................................... 4

1.1 Test Summary ................................................................................................................................................................ 5 2.0 Background ........................................................................................................................................................................ 5 3.0 References .......................................................................................................................................................................... 5 4.0 Handling Precautions ......................................................................................................................................................... 6 5.0 Visual Inspection................................................................................................................................................................ 6 6.0 Procedure............................................................................................................................................................................ 6

6.1 Bias Circuit..................................................................................................................................................................... 7 6.2 Dosimetry ....................................................................................................................................................................... 8 6.3 Dose and Dose-Rate Conditions..................................................................................................................................... 8

7.0 Pre-Rad Test Results .......................................................................................................................................................... 8 7.1 Gate-to-Source Leakage Current (IGSS) .......................................................................................................................... 9 7.2 Drain-to-Source Leakage Current (IDSS)......................................................................................................................... 9 7.3 Drain-to-Source Breakdown Voltage (BVDSS) ............................................................................................................. 10 7.4 Gate Threshold Voltage (VTH)...................................................................................................................................... 11 7.5 SubThreshold Voltage (VSUBTH) ................................................................................................................................... 11 7.6 On-State Resistance (RDSON) ........................................................................................................................................ 12 7.7 Body Diode Forward Voltage (VSD)............................................................................................................................. 13

8.0 Gamma Test Results......................................................................................................................................................... 13 8.1 Gate-to-Source Leakage Current (IGSS) ........................................................................................................................ 13 8.2 Drain-to-Source Leakage Current (IDSS)....................................................................................................................... 14 8.3 Drain-to-Source Breakdown Voltage (BVDSS) ............................................................................................................. 14 8.4 Threshold Voltage (VTH) .............................................................................................................................................. 15 8.5 Subthreshold Voltage (VSUBTH) .................................................................................................................................... 16 8.6 On-State Resistance (RDSON) ........................................................................................................................................ 17 8.7 Body Diode Forward Voltage (VSD)............................................................................................................................. 18

9.0 Pre-Rad and Post-Rad/Anneal Temperature Results ........................................................................................................ 19 9.1 Gate-to-Source Leakage Current (IGSS) ........................................................................................................................ 19 9.2 Drain-to-Source Leakage Current (IDSS)....................................................................................................................... 19 9.3 Drain-to-Source Breakdown Voltage (BVDSS) ............................................................................................................. 20 9.4 Threshold Voltage (VTH) .............................................................................................................................................. 20 9.5 On-State Resistance (RDSON) ........................................................................................................................................ 21 9.6 Body Diode Forward Voltage (VF(BD)) ......................................................................................................................... 21

10.0 Summary ........................................................................................................................................................................ 22 Appendix A – Parametric Test Summary............................................................................................................................... 24 Appendix B – Notes and Setup Information .......................................................................................................................... 27 Appendix C - Definitions and Acronyms ............................................................................................................................... 28


4

Program: Report Date:

NASA Goddard (Power MOSFET Radiation Characterization) 05/01/2007 Generic Part No. Part Description: Manufacturer:

MSAFX11P50A 500V, 11A P-Channel Power MOSFET Microsemi (MS) Package Type: Date Code: Wafer Lot No:

COOLPAK 1 0644 Detailed Test Specification: General Test Requirement: Performance Specification

NASA Test Request NASA Test Request Microsemi Datasheet #MSC0308A Serial Numbers: Radiation Test Test Date

11, 12, 13, 14, 15, and 16 (Control SN 20) Gamma (Co-60) 04/18/2004 1.0 Executive Summary

On 18 April 2007, personnel at NAVSEA Crane evaluated the radiation performance of a 500 Volt (V), 11 Ampere (A), P-Channel power MOSFET (MSAFX11P50A) to the conditions as requested by Christian Poivey (NASA). This report covers the total dose (Gamma) characterization of that NASA Test Request. Section 6 discusses the test procedure and dosimetry; Section 7 presents the pre-radiation test results; and Section 8.0 presents the post-radiation test results. Appendix A presents a partial tabular summary of the parametric test data and an excel link to the complete data set; Appendix B provides test notes and setup information; and Appendix C provides a list of Acronyms and Units of Measure. NAVSEA Crane performed gamma irradiations under three different bias conditions:

Bias 1: VGS = -10 V and VDS = 0 V (On-State Bias) (SN 11 and SN 14) Bias 2: VGS = 0 V and VDS = 280 V (Off-State Bias under High Drain Field Conditions) (SN 12 and SN 15) Bias 3: VGS = 0 V and VDS = 0 V (Off-state under Low Field Conditions) (SN 13 and SN 16)

After gamma radiation and post electrical characterization, devices were annealed at room temperature (with all pins grounded) for 168 hours. Devices were electrically characterized after 40 hours and 168 hours of annealing. Worst-case results were obtained using an insitu bias of VGS of -10V and VDS of 0V. With the exception of threshold voltage (VTH) and on-resistance (RDSON), the other tested parameters (IGSS+, IGSS-, IDSS, BVDSS, and VSD) remained with specification limits to the maximum tested dose of 40 krd(Si). Threshold voltage exceeded the –4.5 limit at 10 krd(Si) and on-state resistance exceeded the 0.75-ohm limit at 40 krd(Si). At 40 krd(Si), there was insufficient gate drive at –10 V for a valid on-state resistance measurement. After 168-hour anneal, test results show a slight improvement in overall performance. Subthreshold curves indicate some oxide trap annealing and a small buildup of interface states. Both appear to be negligible.


5

1.1 Test Summary Six packages were characterized (S/N 11, 12, 13, 14, 15, and 16) in accordance with the NASA Test Request. Devices were pre-characterized at –5, 23, and 125ºC. We performed the following electrical measurements:

1. Gate-to-Source Leakage Current (IGSS) a. Swept from –22 to 21V in 1V steps

2. Drain-to-Source Leakage Current (IDSS) a. Swept from –10 to –500V in –10V steps

3. Drain-to-Source Breakdown Voltage (BVDSS) a. Swept from –500 to –574V in –1V steps

4. Threshold Voltage (VTH) a. Swept from –1 to -9.9V in –0.1V steps

5. Subthreshold Voltage (VSUBTH) a. Swept from –9.9 to 0V in 0.1V steps

6. On-state Voltage and Resistance (VDSON and RDSON) a. VDS swept from -0.04 to -4.6V in 0.04V steps b. VGS stepped from 0 to -16V in -2V steps

7. Body Diode Forward Voltage (VSD) a. Swept from 0 to 1.7V in 0.023V steps

Devices where irradiated using a Shepherd Co60 Gamma Cell using a nominal dose rate of 55.37 rd(Si)/s (contoured dose enhancement shields were used) to ionizing doses of 2K, 5K, 10K, 20K, and 40K rd(Si). After 40 krd(Si), devices were annealed at ambient room temperature (71°F) and characterized after 40 hours and 168 hours. After 40 krd(Si), the measured threshold voltage shifted from its initial value of –3.5V to –7.9V and the on-state resistance could not be measured because of insufficient current drive at a gate voltage of –10V. The other measured DC electrical parameters did not exceed the manufacturer’s specified limits after gamma irradiation. The effects of annealing on the test results appear to be negligible. (no significant changes were noted).

2.0 Background

Microsemi packages and markets the MSAFX11P50A; however, Microsemi does not fabricate the actual MOSFET die (Microsemi purchases the MOSFET die from a different manufacturer and then assembles devices). NASA provided a limited number of test samples. The purpose of this characterization was to identify potential radiation issues with this product and provide a useful baseline of its radiation performance.

3.0 References

The major applicable documents, used to perform this gamma irradiation characterization are: MIL-STD-750D Test Methods for Semiconductor Devices

Method 1019 Steady State Total Dose Irradiation Procedure Method 1051 Temperature Cycling (air to air) Method 3400 Conditions for Measurement of MOSFET Parameters Method 3404 MOSFET Threshold Voltage Method 3405 Drain to Source On-State Voltage Method 3407 Breakdown Voltage Drain to Source


6

Method 3411 Gate Reverse Leakage Method 3415 Drain reverse current

ASTM Standard E668 Standard Practice for the Application of Thermoluminescence Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation Hardness Testing of Electronic Devices - Annual Book of ASTM Standards, Vol. 12.02: Nuclear (II), Solar, and Geothermal Energy, American Society for Testing and Materials

NAVSEA INST 4734.1 NAVSEA Metrology and Calibration Program DOD-HDBK-263 Handbook - Electrostatic discharge sensitive devices MSC0308A Microsemi Datasheet for the MSAFX11P50A

4.0 Handling Precautions

Handling precautions were observed in accordance with DOD-HDBK-263 concerning the handling of electrostatic discharge sensitive (ESD) devices.

4.1 Maximum rated voltages during irradiation were not exceeded 4.2 Devices were stored within antistatic boxes and conductive foam 4.3 Devices were not handled by leads (minimized wherever possible) 4.4 Devices and carriers were placed on a ESD protective-type surface (1-MOhm termination)

during transfer to and from test socket using ESD approved tweezers 4.5 Personnel used ESD wrist straps when handling devices

5.0 Visual Inspection A quick visual inspection (naked eye) of each package was performed before irradiation.

6.0 Procedure

Test conditions were performed as specified per the NASA test Request using an applicable test circuit. Irradiations were performed at an ambient temperature of the irradiator system (we maintained chamber temperature by forcing a constant air stream into the chamber). Figure 1 depicts the insitu bias circuit defined by the test plan.

Bias 1: VGS = -10 V and VDS = 0 V (Bias 1 – SN 11 and SN 14) Bias 2: VGS = 0 V and VDS = 0 V (Bias 2 – SN 12 and SN 15) Bias 3: VGS = 0 V and VDS = -280 V (Bias 3 – SN 13 and SN 16)

Devices were placed in the (Co-60 Gamma Cell) irradiator with the appropriate bias applied. The devices were then irradiated to the following accumulated dose levels.

a) 0 krd(Si) b) 2 krd(Si) c) 5 krd(Si) d) 10 krd(Si) e) 20 krd(Si) f) 40 krd(Si)


7

Upon completion of each exposure level, devices were removed from the irradiator, electrically characterized, and then returned to the gamma irradiator for the next exposure level.

Fig. 1. Bias Circuit Used during Gamma Irradiation

6.1 Bias Circuit

A total dose insitu bias board (P/N TO-3 MOSFET BOARD) was designed and fabricated to perform these tests. The test circuit conformed to the requirements of the detailed test specification. Figure 2 is an actual picture of the fabricated insitu bias board used during this total dose characterization.

Front of Board Back of Board

Fig. 2. Top- and back-side photographs of Insitu Bias Board.


8

6.2 Dosimetry Dosimetry is based upon the NAVSEA Crane Co-60 source, which is traceable to the National Institute of Standards and Tests (NIST) and approved by the American Society of Test Methods (ASTM). An additional dosimetry check was performed using TLD’s placed at selected DUT socket locations, which provided measurements within ±20%. TLDs are a calcium fluoride, manganese-doped (CaF2:Mn) ribbon with dimensions of 1/8 by 1/8 by 0.035 inches. Four ribbons (2x2 array) were placed in aluminum TLD holder. The average reading of the four ribbons was used to determine the total ionizing dose for a given exposure time. These doses were then used to verify the expected dose rate of the gamma cell irradiator (half-life calculations). Table 1 provides a summary of the TLD readings and dose rate calculations.

Table 1. TLD Verification of Dose Rate and Uniformity

TLD Package Target Dose (rd(Si))

Exposure Time (min)

Average Dose (rd(CaF2))

Average Dose Rate (rd(Si)/s)

1 15120 4.55 13400 48.55 2 15120 4.55 15200 55.07

6.3 Dose and Dose-Rate Conditions

A dose rate of 55.37 rd(Si)/s (expected half-life dose rate) was used for these irradiation sequences. Table 2 provides a summary of the irradiation and test sequences.

Table 2. Summary of Exposure and Test Sequence

Exposure Level Total Dose

krd(Si)

Approx. Test Time

(Min)

Exposure Time (Min)

1 2 55 0.60 2 5 20 0.90 3 10 20 1.51 4 20 20 3.01 5 40 20 6.02

7.0 Pre-Rad Test Results

Six devices (SN 11-16) and a control (SN 20) were electrically characterized before gamma irradiation. Devices were characterized at –5, 23, and 125ºC to the following electrical test conditions:

1. Gate-to-Source Leakage Current (IGSS) a. VGS Swept from –22 to 21V using 1V steps

2. Drain-to-Source Leakage Current (IDSS) a. VDS Swept from –10 to –500V using –10V steps

3. Drain-to-Source Breakdown Voltage (BVDSS) a. VDS Swept from –500 to –574V using –1V steps

4. Threshold Voltage (VTH) a. VGS and VDS Swept from –1 to -9.9V using –0.1V steps


9

5. Subthreshold Voltage (VSUBTH) a. VGS Swept from –9.9 to 0V using 0.1V steps b. VDS = 0.1V

6. On-state Voltage and Resistance (VDSON and RDSON) a. VDS Swept from -0.04 to -4.6V using 0.04V steps b. VGS stepped from 0 to -16V using -2V steps

7. Body Diode Forward Voltage (VSD) a. VSD Swept from 0 to 1.7V using 0.023V steps b. VGS = 0V

In this section, we present the pre-rad test results at 25°C. Pre-rad temperature sweeps for each of these test conditions are available but were not graphically presented in this test report. These data are contained in the excel spreadsheet files supplied to NASA. 7.1 Gate-to-Source Leakage Current (IGSS)

The pre-rad gate-to-source leakage currents are shown in Fig. 3. The specification for IGSS has two components: a positive IGSS measured at VGS of +20V and a negative IGSS measured at VGS of –20V with a specification limit not to exceed (±) 100 nA. These devices measured less than (±) 50 pA.

Fig. 3. Pre-Rad Gate-to-Source Leakage Current Response

7.2 Drain-to-Source Leakage Current (IDSS) The pre-rad drain-to-source leakage currents are shown in Fig. 4. The specification for IDSS is measured at a VDS of -400V with a specification limit not to exceed -200 µA. These devices measured less than -400 pA.


10

Fig. 4. Pre-Rad Drain-to-Source Leakage Current Response

7.3 Drain-to-Source Breakdown Voltage (BVDSS) The pre-rad drain-to-source breakdown voltages are shown in Fig. 5. The specification for BVDSS is measured at IDS of –250 µA with a specification limit to exceed -500 V. These devices measured more than -560 V.

Fig. 5. Pre-Rad Drain-to-Source Breakdown Voltage Response


11

7.4 Gate Threshold Voltage (VTH) The pre-rad gate threshold voltages are shown in Fig. 6. The specification for VTH is measured at VDS = VGS and IDS of –250 µA with a specification between –2 and –4.5 V. These devices measured between –3.4 and -3.6 V.

Fig. 6. Pre-Rad Gate Threshold Voltage Response

7.5 SubThreshold Voltage (VSUBTH) The pre-rad subthreshold voltages are shown in Fig. 7. There is no specification for VSUBTH. We measured VSUBTH at VDS = 0.1V. VSUBTH is useful in analyzing the shifts caused oxide traps and interface states.


12

Fig. 7. Pre-Rad Subthreshold Voltage Response

7.6 On-State Resistance (RDSON) The pre-rad on-state resistances are shown in Fig. 8. The specification for RDSON is at VGS of -10 V and IDS of –6 A with RDSON less than 0.75 ohms. Our test devices measured less than 0.56 Ohms.

Fig. 8. Pre-Rad On-State Resistance Response


13

7.7 Body Diode Forward Voltage (VSD) The pre-rad body diode forward voltages are shown in Fig. 9. The specification for VSD is VGS of 0.0 V and IDS of 11 A with VSD less than 3.0 V. These devices measured less than 1.6 V at IDS of 3.0 A. No measurements were made at the specification test condition.

Fig. 9. Pre-Rad Body Diode Forward Voltage Response

8.0 Gamma Test Results Six packages were characterized to Gamma radiation using a Co-60 Gamma Cell Irradiator located at NAVSEA Crane. A dose rate of 55.37 rd(Si) per second was used to ascertain the desired irradiation test sequence as depicted in Table 2 (See Section 6.3). This section presents those radiation test results. 8.1 Gate-to-Source Leakage Current (IGSS)

The radiation-induced gate-to-source leakage currents are shown in Fig. 10 for an applied gate bias of –20 V (left Plot) and +20 V (right Plot). For all three bias conditions, the gate-to-source leakage current remains below the 100 nA specification limit to the maximum tested ionizing dose of 40 krd(Si).


14

Fig. 10. Gate-to-Source Leakage Current vs. Total Ionizing Dose

8.2 Drain-to-Source Leakage Current (IDSS) The radiation-induced drain-to-source leakage currents are shown in Fig. 11 for an applied drain voltage of 400V. For all three bias conditions, the drain-to-source leakage current does not exceed the 200 μA specification limit to the maximum tested ionizing dose of 40 krd(Si).

Fig. 11. Drain-to-Source Leakage Current vs. Total Ionizing Dose

8.3 Drain-to-Source Breakdown Voltage (BVDSS) Fig. 12 shows the radiation-induced drain-to-source breakdown voltage measured at a drain current of 250 μA. For these bias conditions, the drain-to-source breakdown voltage does not shift below the 500 V specification limit to the maximum tested ionizing dose of 40 krd(Si).


15

Fig. 12. Drain-to-Source Breakdown Voltage vs. Total Ionizing Dose

8.4 Threshold Voltage (VTH) Fig. 13 shows the radiation-induced gate threshold voltage measured at a drain current of 250 μA. For these bias conditions, the threshold voltage shifts beyond the –4.5 V specification limit at an approximate dose of 8 krd(Si). By 40krd(Si), the threshold voltage increased to -7.9 volts. Bias 1 (VGS=-10V; VDS=0V) induced the largest shift change in VTH.

Fig. 13. Threshold Voltage vs. Total Ionizing Dose


16

8.5 Subthreshold Voltage (VSUBTH) Fig. 14 shows the radiation-induced subthreshold voltage of insitu Bias 1 measured at a drain voltage of 0.1 V. Subthreshold shifts are indicative of oxide traps whereas slope changes are indicative of interface state buildup. Clearly, these data indicate that primary shift in the threshold voltage is due to a buildup of oxide traps. Fig. 15 shows the radiation-induced subthreshold voltage of insitu Bias 2 measured at a drain voltage of 0.1 V. These data indicate that primary shift is due to a buildup of oxide traps. Insitu Bias 1 causes a significantly higher buildup of oxide traps when compared to insitu Bias 2. Fig. 16 shows the radiation-induced subthreshold voltage of insitu Bias 3 measured at a drain voltage of 0.1 V. These data indicate that primary shift is due to a buildup of oxide traps. Insitu Bias 1 causes a significantly higher buildup of oxide traps when compared to insitu Bias 2 and Bias 3. Fig. 17 shows the control device. These data indicate that, during the irradiation sequences, the subthreshold sweep remained consistent and that the observed shifts were radiation induced. However, there is a shift (a small slope change) in the subthreshold voltage curve taken during the anneal. This was most likely due to changes within the test station (drift, etc.) but it is considered negligible.

Fig. 14. Subthreshold Voltage (Insitu Bias 1) vs. Total Ionizing Dose (SN 11 and SN 14).

Fig. 15. Subthreshold Voltage (Insitu Bias 2) vs. Total Ionizing Dose (SN 12 and SN 15)


17

Fig. 16. Subthreshold Voltage (Insitu Bias 3) vs. Total Ionizing Dose (SN 13 and SN 16)

Fig. 17. Subthreshold Voltage (Control) Recorded at Each Dose Levels (SN 20)

8.6 On-State Resistance (RDSON) Fig. 18 shows the radiation-induced on-state resistance measured at a drain current of -6.0 A and a VGS of –10 V. Under insitu Biases 2 and 3, the on-state resistance remains well within the specification limit thru the maximum dose of 40 krd(Si). Under insitu Bias 1, the on-state resistance stays within specification thru 20 krd(Si), but at 40 krd(Si), there was insufficient gate drive to source the required current.


18

Fig. 18. On-State Resistance vs. Total Ionizing Dose

8.7 Body Diode Forward Voltage (VSD) Fig. 19 shows the radiation-induced body diode forward voltage measured at a drain current of 3.0 A. The body diode forward voltage changes after irradiation was minor and negligible.

Fig. 19. Body Diode Forward Voltage vs. Total Ionizing Dose


19

9.0 Pre-Rad and Post-Rad/Anneal Temperature Results After the final dose of 40 krd(Si), devices were annealed at room temperature (71°F) for 168 hours. After 168 hours anneal, devices were electrically characterized at –5, 23, and 125°C. This section presents the pre-rad temperature response and the post-rad/anneal temperature results. 9.1 Gate-to-Source Leakage Current (IGSS)

Fig 20 shows a comparison between the pre-rad and post-rad/post-anneal IGSS for an applied gate bias of –20 V (top Plots) and +20 V (bottom Plots) measured at the three different temperatures (-5, 23, and 125°C). IGSS remains below the 100 nA specification limit even at 125°C.

Fig. 20. Pre-rad (right plots) and Post-Rad/Post-Anneal (left plots) IGSS vs. Temperature

9.2 Drain-to-Source Leakage Current (IDSS) Fig 21 shows a comparison between the pre-rad and post-rad/post-anneal IDSS at VDS of –400V at the three different temperatures (-5, 23, and 125°C). IDSS remains below the 200 μA specification limit even at 125°C. From these data, we observe that IDSS increased 500 times its initial value after irradiation and that IDSS is temperature dependent.


20

Fig. 21. Pre-Rad (left Plot) and Post-Rad/Post-Anneal (right plot) IDSS vs. Temperature

9.3 Drain-to-Source Breakdown Voltage (BVDSS) Fig. 22 shows a comparison between the pre-rad (left plot) and the post-rad/post-anneal (right plot) BVDSS measured at a drain current of -250 μA at the three different temperatures (-5, 23, and 125°C). BVDSS remains above the -500 V specification limit. BVDSS was not measured at 125°C because we only swept the VDS to -574V and obviously BVDSS is greater than -574V. From these data, we observed that BVDSS increased by approximately -10V.

Fig. 22. Pre-Rad (let Plot) and Post-Rad/Post-Anneal (right Plot) BVDSS vs. Temperature

9.4 Threshold Voltage (VTH) Fig. 23 shows a comparison between the pre-rad and post-rad/post-anneal VTH measured at a drain current of -250 μA at the three different temperatures (-5, 23, and 125°C). Before gamma irradiation, all devices remained within specification. After gamma irradiation, VTH exceeded the –4.5 V specification. From these data, we observed that the VTH increased by approximately –4.5V. This shift in VTH becomes an issue if the gate voltage is insufficient to turn-on the device after irradiation.


21

Fig. 23. Pre-Rad (left plot) and Post-Rad/Post-Anneal (right plot) VTH vs. Temperature

9.5 On-State Resistance (RDSON)

Fig. 24 shows a comparison between the pre-rad and post-rad/post-anneal RDSON measured at different drain currents at the three different temperatures (-5, 23, and 125°C). At different temperatures and especially after gamma irradiation, devices were not capable of sourcing the required –6.0 A as defined by the specification under the test station sweep conditions. To acquire these plots, we extracted RDSON at lower drain currents where feasible. Devices irradiated with Insitu Bias 1 (SN 11 and SN 14) did not have sufficient drive at VGS of –10V to extract a usable RDSON.

Fig. 24. Pre-Rad (left Plot) and Post-Rad/Post-Anneal (right Plot) RDSON vs. Temperature

9.6 Body Diode Forward Voltage (VF(BD))

Fig. 25 shows a comparison between the pre-rad and post-rad/post-anneal VF(BD) measured at a forward current of 3A (specification condition is 11A) at the three different temperatures (-5, 23, and 125°C). Although measured at a lower current, the radiation changes are not expected to be impacted. From these data, we observed that the VF(SD) increased by approximately 150mV.


22

Fig. 25. Pre-Rad (left Plot) and Post-Rad/Post-Anneal (right Plot) VF(BD) vs. Temperature

10.0 Summary On 18 April 2007, personnel at NAVSEA Crane evaluated the radiation performance of a 500 Volt (V), 11 Ampere (A), P-Channel power MOSFET (MSAFX11P50A) to the conditions as requested by Christian Poivey (NASA). This report covers the total dose (Gamma) characterization of that NASA Test Request. Section 6 described the test procedure and dosimetry; Section 7 presented the pre-radiation test results; and Section 8.0 presented the post-radiation test results. Six packages were characterized (S/N 11, 12, 13, 14, 15, and 16) in accordance with the NASA Test Request. Devices were pre-characterized at –5, 23, and 125ºC. We performed the following electrical measurements:

1. Gate-to-Source Leakage Current (IGSS) a. Swept from –22 to 21V in 1V steps

2. Drain-to-Source Leakage Current (IDSS) a. Swept from –10 to –500V in –10V steps

3. Drain-to-Source Breakdown Voltage (BVDSS) a. Swept from –500 to –574V in –1V steps

4. Threshold Voltage (VTH) a. Swept from -1 to -9.9V in –0.1V steps

5. Subthreshold Voltage (VSUBTH) a. Swept from –9.9 to 0V in 0.1V steps

6. On-state Voltage and Resistance (VDSON and RDSON) a. VDS swept from -0.04 to -4.6V in 0.04V steps b. VGS stepped from 0 to -16V in -2V steps

7. Body Diode Forward Voltage (VSD) a. Swept from 0 to 1.7V in 0.023V steps

Devices where irradiated using a Shepherd Co60 Gamma Cell using a nominal dose rate of 55.37 rd(Si)/s (contoured dose enhancement shields were used) to ionizing doses of 2K, 5K, 10K, 20K, and 40K rd(Si). After 40 krd(Si), devices were annealed at ambient room temperature (71°F) and characterized after 40 hours and 168 hours.


23

NAVSEA Crane performed gamma irradiations under three different bias conditions: Bias 1: VGS = -10 V and VDS = 0 V (On-State Bias) Bias 2: VGS = 0 V and VDS = -280 V (Off-State Bias under High Drain Field Conditions) Bias 3: VGS = 0 V and VDS = 0 V (Off-state under Low Field Conditions)

After 40 krd(Si), the measured threshold voltage shifted from its initial value of –3.5V to –7.9V and the on-state resistance could not be measured because of insufficient current drive at a gate voltage of –10V. The other measured DC electrical parameters did not exceed the manufacturer’s specified limits after gamma irradiation. The effects of annealing on the test results appear to be negligible. (no significant changes were noted).

After 168-hour anneal, test results show a slight improvement in overall performance. Subthreshold curves indicate some oxide trap annealing and a small buildup of interface states. Both appear to be negligible. Worst-case results were obtained using an insitu bias of VGS of -10V and VDS of 0V. With the exception of threshold voltage (VTH) and on-resistance (RDSON), the other tested parameters (IGSS+, IGSS-, IDSS, BVDSS, and VSD) remained with specification limits to the maximum tested dose of 40 krd(Si). Threshold voltage exceeded the –4.5 limit at 10 krd(Si) and on-state resistance exceeded the 0.75-ohm limit at 40 krd(Si). At 40 krd(Si), there was insufficient gate drive at –10 V for a valid on-state resistance measurement.

Appendix A – Parametric Test Summary

IGSS- Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 3.29E-11 3.55E-11 3.11E-11 2.91E-11 125 0 0 -9.94E-10 -9.24E-10 -1.38E-09 -9.98E-10 23 0 0 2.94E-11 2.93E-11 3.20E-11 3.40E-11 23 0 2 2.48E-11 3.07E-11 2.91E-11 3.07E-11 23 0 5 3.14E-11 4.98E-11 3.71E-11 3.04E-11 23 0 10 2.84E-11 5.75E-11 2.89E-11 2.58E-11 23 0 20 2.96E-11 5.68E-11 3.08E-11 2.70E-11 23 0 40 2.48E-11 4.88E-11 2.95E-11 3.38E-11 -5 168 40 3.00E-11 2.64E-11 2.54E-11 3.12E-11 23 168 40 2.34E-11 2.44E-11 2.30E-11 2.37E-11 125 168 40 -1.33E-10 -2.12E-10 -1.98E-10 -3.44E-10

IGSS+ Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 2.61E-12 3.54E-12 -3.05E-13 -3.70E-13 125 0 0 1.28E-09 1.21E-09 1.73E-09 1.41E-09 23 0 0 6.29E-12 4.70E-13 1.50E-13 -3.90E-13 23 0 2 7.59E-12 4.62E-12 3.75E-12 3.83E-12 23 0 5 7.78E-12 5.95E-13 3.36E-12 -1.30E-13 23 0 10 9.22E-12 3.41E-12 9.15E-12 1.06E-11 23 0 20 6.80E-12 8.61E-12 5.94E-12 1.77E-12 23 0 40 1.68E-11 8.18E-12 8.61E-12 1.39E-12 -5 168 40 6.34E-12 8.72E-12 5.23E-12 1.33E-11 23 168 40 1.56E-11 1.98E-11 1.61E-11 1.44E-11 125 168 40 2.52E-10 3.29E-10 3.33E-10 5.13E-10

IDSS Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 -9.36E-11 -1.06E-10 -9.07E-11 -9.99E-11 125 0 0 -1.20E-06 -1.34E-06 -1.47E-06 -1.42E-06 23 0 0 -2.42E-10 -2.69E-10 -2.05E-10 -2.07E-10 23 0 2 -1.73E-08 -4.19E-09 -2.46E-09 -2.16E-10 23 0 5 -7.10E-09 -1.23E-08 -6.32E-09 -2.82E-10 23 0 10 -1.47E-08 -2.39E-08 -1.32E-08 -2.65E-10 23 0 20 -2.53E-08 -3.85E-08 -2.31E-08 -2.76E-10 23 0 40 -3.91E-08 -5.78E-08 -4.02E-08 -2.79E-10 -5 168 40 -5.51E-08 -6.43E-08 -7.64E-09 -1.78E-10 23 168 40 -1.06E-07 -1.17E-07 -6.54E-08 -6.42E-10 125 168 40 -4.76E-05 -6.06E-05 -3.47E-05 -8.38E-07


25

BVDSS Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 549.98 549.89 548.50 546.50 125 0 0 >574 >574 >574 >574 23 0 0 565.41 565.34 564.41 562.45 23 0 2 566.50 567.45 564.55 561.60 23 0 5 567.63 569.53 564.97 562.48 23 0 10 568.95 570.97 565.35 562.50 23 0 20 570.75 572.31 565.94 562.50 23 0 40 573.00 573.92 566.30 562.48 -5 168 40 565.00 563.97 554.79 548.49 23 168 40 572.45 573.15 568.53 562.38 125 168 40 > 574 > 574 > 574 > 574

VTH Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 -3.659 -3.628 -3.670 -3.642 125 0 0 -2.647 -2.630 -2.653 -2.629 23 0 0 -3.482 -3.449 -3.486 -3.468 23 0 2 -3.759 -3.596 -3.627 -3.473 23 0 5 -4.158 -3.764 -3.794 -3.467 23 0 10 -4.775 -3.983 -4.013 -3.465 23 0 20 -5.915 -4.279 -4.310 -3.464 23 0 40 -7.862 -4.608 -4.634 -3.464 -5 168 40 -7.698 -4.817 -4.881 -3.619 23 168 40 -7.609 -4.689 -4.716 -3.469 125 168 40 -6.413 -3.726 -3.740 -2.695

RDSON Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 0.444 0.431 0.433 0.428 125 0 0 No Data No Data No Data No Data 23 0 0 0.5492 0.5469 0.5525 0.5449 23 0 2 0.5551 0.5536 0.5495 0.5423 23 0 5 0.5545 0.5598 0.5511 0.5460 23 0 10 0.5596 0.5627 0.5526 0.5462 23 0 20 0.5737 0.5654 0.5552 0.5466 23 0 40 No Data 0.5685 0.5577 0.5461 -5 168 40 0.785 0.488 0.458 0.444 23 168 40 No Data 0.577 0.571 0.547 125 168 40 No Data No Data No Data No Data


26

VSD (3A) Temp Anneal Dose Bias 1 Bias 2 Bias3 Control ( C) (hr) krd(Si) -5 0 0 1.652 1.601 1.648 1.603 125 0 0 1.214 1.191 1.209 1.170 23 0 0 1.5712 1.5230 1.5628 1.5210 23 0 2 1.5884 1.5420 1.5803 1.5328 23 0 5 1.6025 1.5481 1.5889 1.5290 23 0 10 1.6139 1.5579 1.5965 1.5300 23 0 20 1.6217 1.5680 1.6095 1.5290 23 0 40 1.6226 1.5831 1.6312 1.5300 -5 168 40 1.775 1.710 1.750 1.603 23 168 40 1.725 1.658 1.686 1.528 125 168 40 1.369 1.320 1.328 1.197

The above summary is only a partial listing of the available data taken on these devices. The attached excel sheet contains the complete data set.

TID_SWP_DATA2.xls


27

Appendix B – Notes and Setup Information B1.0 TEST SETUP CONNECTIONS Equipment List: Irradiation: Keithley 236 S&C 094421 (Gate Voltage of –10V) Keithley 487 S&C 094424 (Drain Voltage of –280V) Keithley 236 S&C 072762 (Zero Volts) FLUKE 75 S&C 097040 (Verify Connections) Note. Keithley supply connected to custom Insitu test board using a four-wire cable approximately 5 ft long! Electrical Measurements

ICS Test System (Station #1) Keithley 236 Reset S&C 094641 Keithley 237 Drain S&C 093142 Keithley 237 Gate S&C 097039 Keithley 238 Not Used S&C 104417 Keithley 236 Set S&C 072759 HP 4275A Not Used S&C 073428 Thermonics T-2600BV Forced Air System S&C 101401 Tektronix 370 Drain & Gate S&C 059750 Custom Boards

Custom Insitu Bias Board Discrete SMU Tester Interface Electrical DUT CARD TO-3 Conversion Card for DUT (DUT is solder directly to this card)

Computer System Dell GX270 Optiplex System Software ICS METRICS Software


28

Appendix C - Definitions and Acronyms

ASTM American Society of Test Methods BVDSS Drain-to-source breakdown voltage: maximum potential before the high electric

field induces breakdown

DUT Device Under Test

ESD A transfer of electrostatic charge between two bodies at different electrostatic

potentials

IDSSOFF The measured drain current when the channel is fully depleted (off-state

condition).

IGSSON The measured gate current when the channel is fully accumulated (on-state

condition).

IGSSOFF The measured gate current when the channel is fully depleted (off-state condition) Insitu Bias Bias applied during irradiation Ionizing Radiation Radiation that produces electron-hole pairs

MOSFET Metal Oxide Semiconductor Field Effect Transistor

NAVSEA Naval Sea Command

NIST National Institute of Standards and Tests

NSWC Naval Surface Warfare Center

RDSON The measured resistance when the channel is fully accumulated (on-state

condition).

S/N Serial Number

TLD Thermoluminscence Dosimetry – material that emits light proportional to amount

of energy absorbed

VDSON The measured drain-to-source voltage when the channel is fully accumulated (on-

state condition).

VDS Voltage potential across the drain and source

VGS Voltage potential across the gate and source

VTH Threshold Voltage

Date post:	12-May-2020
Category:	Documents
Upload:	others
View:	1 times
Download:	0 times

(GAMMA/TOTAL IONIZING OSE - NASA€¦ · FINAL TEST REPORT (Revision 1) Microsemi Power MOSFET...

Documents