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Mos, Cmos, Transmission Gates

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1 Principles of VLSI Design CMPE 413 CMOS Basics MOS: Metal Oxide Semiconductor Transistors are built on a Silicon (semiconductor) substrate. Pure silicon has no free carriers and conducts poorly. Dopants are added to increase conductivity: extra electrons (n-type) or extra holes (p-type) MOS structure created by superimposing several layers of conducting, insulating and tran- sistor-forming materials. Metal gate has been replaced by polysilicon or poly in modern technologies. There are two types of MOS transistors: nMOS : Negatively doped silicon, rich in electrons. pMOS : Positively doped silicon, rich in holes. CMOS: Both type of transistors are used to construct any gate.
Transcript
Page 1: Mos, Cmos, Transmission Gates

1

Prin CMPE 413

MO

e) or extra holes (p-type)

ting, insulating and tran-

hnologies.

s.

ciples of VLSI Design CMOS BasicsS: Metal Oxide Semiconductor

Transistors are built on a Silicon (semiconductor) substrate.

Pure silicon has no free carriers and conducts poorly.

Dopants are added to increase conductivity: extra electrons (n-typ

MOS structure created by superimposing several layers of conducsistor-forming materials.

Metal gate has been replaced by polysilicon or poly in modern tec

There are two types of MOS transistors:

nMOS : Negatively doped silicon, rich in electron

pMOS : Positively doped silicon, rich in holes.

CMOS: Both type of transistors are used to construct any gate.

Page 2: Mos, Cmos, Transmission Gates

2

Prin CMPE 413

nM.

n+

Drain

bulk Si

SiO2

Polysilicon

ciples of VLSI Design CMOS BasicsOS and pMOS

Four terminal devices: Source, Gate, Drain, body (substrate, bulk)

p

GateSource

n+

Source Gate Drain

n+n+ p substrate

ThinOxide

nMOSL

W

pMOSSiO2

n

GateSource Drain

bulk Si

Polysilicon

p+ p+

Page 3: Mos, Cmos, Transmission Gates

3

Prin CMPE 413

CM

VDD

sistor

substrate contact (cc)

on contact (cc)urce)

layer #1

layer #2layer #3

n+

n-well (nwell)

nd)

ciples of VLSI Design CMOS BasicsOS Inverter Cross-Section

n+n+p+

glass(insulator)

metal2 metal1m1-m2 contact (via)p-substrate contact (cc)

n-diffusion contact (cc)

polysilicon gate (poly )n-transistor p-tran

GND

n-

p-diffusi

(source)

(so

(Out)

p+p+(drains)

Cadence Layer's for AMI 0.6mm technology

p substrate (black backgrou

(nactive)

(pactive)

Page 4: Mos, Cmos, Transmission Gates

4

Prin CMPE 413

CM

ciples of VLSI Design CMOS BasicsOS Cadence Layout

Cadence Layout for the inverter on previous slide

Page 5: Mos, Cmos, Transmission Gates

5

Prin CMPE 413

MO

rce (S), gate (G) (con-

day, .....)

g = 1

s

d

s

d

ON

OFF

ciples of VLSI Design CMOS BasicsS Transistor Switches

We can treat MOS transistors as simple on-off switches with a soutrols the state of the switch) and drain (D).

1 represents high voltage, VDD (5V, 3.3V, 1.8V, 1.2V, <=1.0V to

0 represent low voltage - GND or VSS. (0V for digital circuits)

gs

d

g = 0

s

d

gs

d

s

d

nMOS

pMOS

OFF

ON

Page 6: Mos, Cmos, Transmission Gates

6

Prin CMPE 413

Sig

source current

have no effect.ifference of at least Vt

tors produce signals with

GND + Vt).

*** Strong 1***

0

1

pMOS

ciples of VLSI Design CMOS Basicsnal Strengths

Signals such as 1 and 0 have strengths, measures ability to sink or VDD and GND Rails are the strongest 1 and 0

Under the switch abstraction, G has complete control and S and DIn reality, the gate can turn the switch on only if a potential d

exists between the G and S.We will look at Vt in detail later on in the course.

Thus signal strengths are related to Vt and therefore p and n transisdifferent strengths

Strong 1: VDD, Strong 0: GND, Weak 1 :(~VDD -Vt) and Weak 0 :(~

0

1

1

1

*** Strong 0*** Weak 1

0

0

Weak 0

nMOSS D S D

G G

Page 7: Mos, Cmos, Transmission Gates

7

Prin CMPE 413

CM

TH D IDEA. WHY?

O

ciples of VLSI Design CMOS BasicsOS Inverter

E CONFIGURATION BELOW FOR A BUFFER IS NOT A GOO

Vdd

CMOS Inverter

P1

N1

A OutA O

0 1

1 0

A

Vdd

N1

A

Out

BAD IDEAP1

Page 8: Mos, Cmos, Transmission Gates

8

Prin CMPE 413

NA

A B C

0 0 1

0 1 1

1 0 1

1 1 0

A B C

0 0 1

0 1 0

1 0 0

1 1 0

ciples of VLSI Design CMOS BasicsND and NOR CMOS Gates

AB C

AB C

Vdd

BOut

A P1

P2

N1 N2

Vdd

A B

OutP1 P2

N2

N1

Page 9: Mos, Cmos, Transmission Gates

9

Prin CMPE 413

Pa

at the drain.sed as switches.

ded outputs, if only one

strong 0Output

degraded 1

degraded 0Output

strong 1

= 1

= 1

= 0

= 0

ciples of VLSI Design CMOS Basicsss Transistor

The off-state of a transistor creates a high impedance condition Z No current flows from source to drain. So transistors can be u

However, as we previously discussed this will produce degratransistor is used as a switch.

g

s d

g = 0s d

g = 1s d

0Input

1

g

s d

g = 0s d

g = 1s d

0Input

g

g

g

g

Page 10: Mos, Cmos, Transmission Gates

10

Prin CMPE 413

Tr

nected to VDD or GND.

of a signal on In to Out.

buffers.

strong 0

Output

strong 1

gb = 0

gb = 0

ciples of VLSI Design CMOS Basicsansmission Gates

P1N1

In Out

A

A

One pMOS and one nMOS in parallel.Note that neither transistor is con

A and A control the transmission

Transmission gates act as tristate

g = 0, gb = 1a b

g = 1, gb = 0a b

0

Input

1

g

gb

a b

a bg

gb

a bg

gb

a bg

gb

g = 1,

g = 1,

Page 11: Mos, Cmos, Transmission Gates

11

Prin CMPE 413

Tr

gates?

Out

ciples of VLSI Design CMOS Basicsansmission Gate Application: Select Mux

How many transistors are required to implement this using CMOS

Select

In Out

Select

VDD

Select

Select

A

B

Transmission Gate 2-to-1 MUX

Select Out

0

1

B

A

Truth Table for 2-to-1 MUX

Out = A.S + B.S

Page 12: Mos, Cmos, Transmission Gates

12

Prin CMPE 413

D

Q

Q

ciples of VLSI Design CMOS BasicsLatch

CLK

D Q

Latc

h D

CLK

Q

Positivelevel-sensitive

latch

1

0

D

CLK

QCLK

CLKCLK

CLK

DQ

If CLK is unavailable one extra inverter needed to generate it using CLK

Page 13: Mos, Cmos, Transmission Gates

13

Prin CMPE 413

D

ed

CLK

CLK

Q

using CLK

Slave

ciples of VLSI Design CMOS BasicsFlip-Flop

Positivege-triggered

flip-flop

Flop

CLK

D Q

D

CLK

Q

master-slaveflip-flop

a.k.a

QMCLK

CLKCLK

CLK

CLK

CLK

D

Latc

h

Latc

h

D QQM

CLK

CLK

If CLK is unavailable one extra inverter needed to generate it

Master

Master Slave

Page 14: Mos, Cmos, Transmission Gates

14

Prin CMPE 413

D

Q

Q

Q

Q

ciples of VLSI Design CMOS BasicsFlip-Flop Operation

CLK = 1

D

CLK = 0

D

QM

QM

D

CLK

Q

M follows D, Q is latched

M transferred to Q, QM latched

Positiveedge-triggered

flip-flop

Page 15: Mos, Cmos, Transmission Gates

15

Prin CMPE 413

Mo

Vdd

Out

ciples of VLSI Design CMOS Basicsre CMOS Gates

Vdd

P1

P2N2

N1

B

A

Page 16: Mos, Cmos, Transmission Gates

16

Prin CMPE 413

An

ciples of VLSI Design CMOS Basicsd More CMOS Gates

B

A

B

Out

Page 17: Mos, Cmos, Transmission Gates

17

Prin CMPE 413

An

OAI

ciples of VLSI Design CMOS Basicsd More CMOS Gates

Vdd

A

BC

D

N2

N3 N4

N1

P1P2

P4

P3


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