Simplifying System Design with MRAM The Fastest, Non-Volatile Memory

MMEEMMCCOONN 22001122

MRAM – Simplifying system design

  MRAM - Magnetic Random Access Memory   Fastest non-volatile memory with unlimited endurance

  Addressing a fundamental Problem of Storage:   Truly Non-Volatile RAM – Power Fail Data Protection   Eliminates complicated power fail management HW & FW   Reduces development time and effort for products

  Complementing DRAM and NAND   Making NAND perform better and last longer   MRAM for write caching, DRAM for read caching   More IOPS and better IOPS/Watt than NAND

2 Flash Memory Summit 2012

Santa Clara, CA

What is MRAM Technology?

  Simple 1 transistor + 1 MTJ memory cell   Magnetic polarization stores data   Resistance levels represent bit values

compared to electron charge levels   Highly reliable non-volatile memory   Unlimited endurance & retention   Low latency enabling instant on/off

magnetic layer 1 free layer

magnetic layer 2 fixed layer

tunnel barrier

high resistance low resistance Circuit

Cross-sectional view

MTJ

Transistor

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Spin-Torque MRAM – Next generation MRAM Current MRAM uses a magnetic field for switching

Next generation MRAM enables scaling to Gb densities

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Toggle Write Spin-Torque Write

MRAM: Best in Class Storage & Working Memory

Primary Working Memory

Ultra-Low Read & Write

Latency <50ns

Unlimited Cycling

Endurance >10e15

Persistent Random Access

Memory

Ultra-High Intrinsic

Reliability >20yrs@125oC

Unlimited Data

Retention >20yrs@125oC

Storage System Memory

Robust Power

Fail Safe No Caps/Batteries

Instant Power-On/Off

Safe Shutdown On <50us/Off <50

Extreme Environment

Memory

Wide Operating

Temperature -40oC – 125oC

Ultra-Low radiation

induced SER <0.1FIT/Mb

Easy BEOL integration with CMOS Ideal choice for eBuffer/eCache

Explosion of content & network users

Faster & consistent data storage access is needed to deliver acceptable performance

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MORE DATA + MORE USERS + INSTANT ACCESS

Huge Processor-Storage Performance Gap Processor spends time waiting for data from storage More IOPS is important but latency matters as well!

Shorter storage latency improves system performance

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late

ncy

(ns)

10-1 100

CPU RAM

109

TAPE DISK

106 104

NAND MRAM

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~1,000,000,000 operations/s

~100 operations/s

The Quest for Faster Data Access “Every 100 ms in latency can cause a 1% drop in sales”

Amazon.com

MRAM delivers the only nanosecond-class, gigabyte-per-second nonvolatile storage tier

1000x higher IOPS(*)

NAND SSD MRAM SSD

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(*) 2kB Transfer Size

1000x lower Latency

ST-MRAM delivers 10x better Price/Performance

Cloud Storage Needs:    

Nanosecond-class MRAM Storage

…at only 50x Cost/GB

500x Performance…

NAND SSD MRAM SSD

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Key Metrics NAND MRAM Density 64Gb 1Gb Latency 50us 45ns 4kB Write IOPS 800 400k Cost/GB 1 50

ST-MRAM delivers 100x Power/Performance

Data Center needs:    

High Performance, Power-Efficient MRAM Storage

Key Metrics NAND MRAM Density 64Gb 1Gb Power 80mW 400mW 4kB Write IOPS 800 400k Cost/GB 1 50

…at only 5x Power

500x Performance…

NAND SSD MRAM SSD

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Everspin – The MRAM Company   MRAM - Magnetic Random Access Memory   Fastest non-volatile memory with unlimited endurance

  Only company to have commercialized MRAM

  Established 2008, 100%+ annual revenue growth

  Fundamental & essential MRAM IP   600+ Patents & Applications WW, 220+ US Patents granted

  Backed by top-tier VCs

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MRAM Adoption Accelerating

6.0M+

(1)

400+ 100+ 100+ 250+

(1)

6M

9M

0

1

2

3

4

5

6

7

8

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3Q08 4Q08 1Q09 2Q09 3Q09 4Q09 1Q10 2Q10 3Q10 4Q10 1Q11 2Q11 3Q11 Q411 1Q12 2Q12 3Q12* 4Q12*

Everspin Toggle MRAM Cumulative Shipments (Mu) * Projections

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MRAM is Everywhere

Storage & Networking

Energy & Infrastructure

Automotive & Transportation

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Targeting $25B MRAM Market in 2016

Storage of

Metadata

Nonvolatile Buffer

for Storage

Nonvolatile Cache

for Storage

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CY12 TAM: $0.5B CY14 TAM: $5B CY16 TAM: $25B

Speedier more reliable Enterprise Storage

  Enterprise Storage: Can’t lose data if power fails !   Historically using batteries/caps to protect data in RAM

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Areas of concern DRAM with battery/caps Spin-Torque MRAM Write performance Temporary persistent cache Truly persistent write cache

Complexity Power fail circuitry Simplified system

Reliability Lifetime reliability issues Truly persistent RAM

Form factor Large battery/caps No battery/caps

Temperature Commercial Automotive

Environmental Battery/caps concerns Truly green storage

Storage Solutions craving ST-MRAM MRAM complements solid state & magnetic storage

Improved response time due to low latency & high bandwidth

MRAM as Buffer Memory

Better performance & reliability

MRAM as I/O & Network Cache

Better reliability & overall TCO

MRAM as Fast Storage-Tier

Better IOPS/$/W & reliability

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MRAM in SSD, HDD and Hybrid   Enterprise/Industrial SSD Ø Ø Ø 

  Hybrid HDD Ø Ø Ø 

  Enterprise HDD Ø Ø Ø 

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Case Study: RAID – Dell & LSI q  Write Journal Memory

for RAID Storage Systems Ø  Storing Metadata Transactions Ø  Rapid power loss data recovery Ø  Superior data integrity Ø  Fast transaction data log Ø  No separate board level discrete

devices, batteries or capacitors

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SAS

Link

Cor

es

PCI-e Interface

External Memory Interface

I/O Processor

System Interface

External DRAM Memory Control

Program MemoryFLASH

Write JournalMRAM

DRAM Cache

PCI-e

Roo

t C

ompl

ex

Embedded SRAM Memory

Case Study: SSD – Buffalo Memory   Buffalo Memory announced a new Industrial SSD that uses Everspin MRAM for the cache. Ø  Exhibited at the15th Embedded Systems Expo in Japan Ø  4GByte SSD with 8MByte of MRAM cache

  “MRAMs are nonvolatile memories that use magnetic materials as elements and feature high-speed random access, high integration and non-volatility. There are three advantages in using MRAM as cache, compared with normal high-speed SSDs that use volatile DRAM as cache.”

  MRAM unique value proposition: 1.  Excellent resistance to power interruption 2.  Improve booting speed 3.  Excellent power-saving capability

Motoyuki Oishi, Nikkei Electronics

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Case Study All Flash Appliance - Skyera   Ø  MRAM replaces capacitor-backed RAM solution Ø 

  Overwhelming customer interest for this product Ø  Initial use of Toggle MRAM in lieu of Capacitor Backed SRAM Ø  Transitioning to ST-MRAM in lieu of Capacitor Backed DRAM Ø  MRAM density deployed growing from MB to GB

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The Quest for Storage Class eMemory

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Converged Systems

eMemory Concerns: -  Logic Compatibility -  Scalability to <2xnm -  Static Power scaling

MRAM is logic friendly, scales, instantly on/off

Processor and Memory merge into one block

Converged Memories

eMemory Concerns: -  Working Memory -  Storage Memory -  Tuning for apps

MRAM serves all eMemory requirements

On-Chip Code and Data Storage merge into one

Do More With Less

eMemory Concerns: -  Performance of NVM -  Endurance of NVM -  Size of on-chip RAM

MRAM is fastest highest density enduring NVM

Deliver better products faster at lower total cost

Everspin - Extraordinary Growth Potential   Everspin MRAM -Simplifying System Design Ø  Truly Non-Volatile RAM – Power Fail Data Protection Ø  Eliminates complicated power fail management HW & FW Ø  Reduces development time and effort for products Ø  Complementing DRAM and NAND in Storage Ø  Compatibility with CMOS Logic, optimal eMemory solution

  Everspin is the leader in MRAM technology Ø  Proven track record - manufacturing MRAM since 2006 Ø  Top tier customers – Dell, LSI, Skyera, Siemens, BMW, etc. Ø  Deployment in many applications with exemplary quality Ø  On track to deliver the industry’s first ST-MRAM product

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