SCT2160KE : SiC Power Devicesrohmfs.rohm.com/.../discrete/sic/mosfet/sct2160ke-e.pdfSCT2160KE...

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DatasheetSCT2160KE N-channel SiC power MOSFET

• Induction heating

• Motor drives

• Solar inverters

• DC/DC converters

• Switch mode power supplies

ID,pulse *2 55 A

VDSS 1200 V

ID *1 22 A

ID *1 16 A

Junction temperature Tj 175 °C

Range of storage temperature Tstg 55 to 175 °C

Gate - Source voltage (DC) VGSS 6 to 22 V

Power dissipation (Tc = 25°C) PD 165 W

Gate - Source surge voltage (Tsurge ˂ 300nsec) VGSS-surge*3 10 to 26 V

Absolute maximum ratings (Ta = 25°C)

Features

165W

Application

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

Symbol Value Unit

Drain - Source voltage

Continuous drain currentTc = 25°C

Tc = 100°C

Pulsed drain current

Parameter

Tube

-

Type

Packaging

Reel size (mm)

C

SCT2160KE

Basic ordering unit (pcs)

Tape width (mm) -

30

Marking

Packing code

Outline

Inner circuit

Packaging specifications

TO-2471200V

22A

VDSS

IDPD

RDS(on) (Typ.) 160m

(1) (2) (3)

(1) Gate(2) Drain(3) Source

*1 Body Diode

(1)

(3)

(2)

*1

1/12 2017.07 - Rev.D


DatasheetSCT2160KE

*1 Limited only by maximum temperature allowed.

*2 PW 10s, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

4.0 V

Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = VGS, ID = 2.5mA 1.6 2.8

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

-

- V

Zero gate voltagedrain current

IDSS

VDS = 1200V, VGS = 0V

ATj = 25°C - 1 10

Tj = 150°C - 2

Drain - Source breakdownvoltage

V(BR)DSS VGS = 0V, ID = 1mA 1200 -

°C

Electrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Soldering temperature, wavesoldering for 10s Tsold - - 265

°C/W

Thermal resistance, junction - case RthJC - 0.70 0.91 °C/W

Thermal resistance, junction - ambient RthJA - - 50

Thermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

2/12 2017.07 - Rev.D


DatasheetSCT2160KE

- Gate input resistance RG f = 1MHz, open drain - 13.7

mTj = 25°C - 160 208

Tj = 125°C - 226 -

Static drain - sourceon - state resistance

RDS(on) *4

VGS = 18V, ID = 7A

V

- 20 -

Gate plateau voltage V(plateau) VDD = 400V, ID = 7A - 9.6 -

nCGate - Source charge Qgs *4 ID = 7A - 14 -

Gate - Drain charge Qgd *4 VGS = 18V

Total gate charge Qg *4 VDD = 400V - 62 -

Gate Charge characteristics (Ta = 25°C)


UnitMin. Typ. Max.

J

Turn - off switching loss Eoff *4 - 55 -

Turn - on switching loss Eon *4 VDD = 600V, ID=7A

VGS = 18V/0V

RG = 0, L=500H*Eon includes diode reverse recovery

- 126 -

VGS = 18V/0V - 25 -

Turn - off delay time td(off) *4 RL = 57 - 67 -

7 -

pF

Turn - on delay time td(on) *4 VDD = 400V, ID = 7A - 23 -

nsRise time tr

*4

Effective output capacitance,energy related

Co(er)VGS = 0VVDS = 0V to 500V

- 71 -

Fall time tf *4 RG = 0 - 27 -

S

Input capacitance Ciss VGS = 0V - 1200 -

pFOutput capacitance Coss

Transconductance gfs *4 VDS = 10V, ID = 7A - 2.4 -

VDS = 800V - 45 -

Reverse transfer capacitance Crss f = 1MHz -

Electrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

3/12 2017.07 - Rev.D


DatasheetSCT2160KE

Ws/KRth2 404m Cth2 5.23m

Rth3 196m Cth3 83.3m

Rth1 96.1m

K/W

Cth1 1.55m

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

- 39 - nC

Peak reverse recovery current Irrm *4 - 3.0 - A

V

Reverse recovery time trr *4

IF = 7A, VR = 400V

di/dt = 160A/s

- 26 - ns

Reverse recovery charge Qrr *4

Forward voltage VSD *4 VGS = 0V, IS = 7A - 4.1 -

A

Inverse diode direct current,pulsed

ISM *2 - - 55 A

Inverse diode continuous,forward current

IS *1

Tc = 25°C

- - 22

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)


UnitMin. Typ. Max.

4/12 2017.07 - Rev.D


DatasheetSCT2160KE

Electrical characteristic curves

0

20

40

60

80

100

120

140

160

180

0 50 100 150 200

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta=25ºCSingle Pulse

0.1

1

10

100

0.1 1 10 100 1000 10000

Ta=25ºCSingle Pulse

PW = 100s

PW = 1ms

PW = 10ms

Operation in this areais limited by RDS(on)

PW = 100ms

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er D

issi

patio

n :

PD

[W]

Dra

in C

urre

nt :

ID

[A]

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt T

herm

al R

esis

tanc

e : R

th[K

/W]

Pulse Width : PW [s]

5/12 2017.07 - Rev.D


DatasheetSCT2160KE


0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10

Ta=25ºCPulsed

10V

VGS= 8V

12V14V

16V

18V

20V

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5

Ta=25ºCPulsed

10V

VGS= 8V

12V14V

16V

18V

20V

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10

Ta=150ºCPulsed

10V

VGS= 8V

12V

14V

16V

18V

20V

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5

Ta=150ºCPulsed

10V

VGS= 8V

12V

14V

16V

18V

20V

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Fig.6 Tj = 150°C Typical Output

Characteristics(I)Fig.7 Tj = 150°C Typical Output

Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

ID

[A]


6/12 2017.07 - Rev.D


DatasheetSCT2160KE


0.01

0.1

1

10

0.01 0.1 1 10

VDS= 10VPlused

Ta=150ºCTa=75ºCTa=25ºCTa= 25ºC

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-50 0 50 100 150 200

VDS = 10VID = 3mA

0.001

0.01

0.1

1

10

0 2 4 6 8 10 12 14 16 18 20


VDS= 10VPlused

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

VDS= 10VPlused


Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Fig.10 Gate Threshold Voltagevs. Junction Temperature

Gat

e T

hres

hold

Vol

tage

: V

GS

(th)

[V]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tra

nsco

nduc

tanc

e : g

fs[S

]

Drain Current : ID [A]

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

7/12 2017.07 - Rev.D


DatasheetSCT2160KE


0

0.1

0.2

0.3

0.4

0.5

0.6

6 8 10 12 14 16 18 20 22

ID = 7A

ID = 15A

Ta=25ºCPulsed

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

-50 0 50 100 150 200

ID = 7A

ID = 15A

VGS= 18VPlused

0.1

1

0.1 1 10 100

VGS= 18VPlused

Ta=150ºCTa=125ºC

Ta=75ºCTa=25ºC

Ta= 25ºC

Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - StateResistance vs. Drain Current

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]


8/12 2017.07 - Rev.D


DatasheetSCT2160KE


0

2

4

6

8

10

12

14

16

18

20

0 200 400 600 800

Ta=25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Coss

Crss

Ciss

Ta=25ºCf = 1MHzVGS = 0V

0

5

10

15

20

0 10 20 30 40 50 60 70

Ta = 25ºCVDD= 400VID= 7APulsed

1

10

100

1000

10000

0.1 1 10 100

tr

tf

td(on)

td(off)

Ta = 25ºCVDD = 400VVGS = 18VRG= 0Pulsed

Fig.15 Typical Capacitancevs. Drain - Source Voltage

Cap

acita

nce

: C

[pF

]


Fig.17 Switching Characteristics

Sw

itchi

ng T

ime

: t [

ns]


Fig.18 Dynamic Input Characteristics

Total Gate Charge : Qg [nC]

Gat

e -

Sou

rce

Vol

tage

: V

GS

[V]

Cos

s S

tore

d E

nerg

y : E

OS

S[

J]

Fig.16 Coss Stored Energy


9/12 2017.07 - Rev.D


DatasheetSCT2160KE


0

100

200

300

400

500

600

700

800

0 5 10 15 20 25

Eoff

Eon

Ta = 25ºCVDD= 600VVGS = 18V/0VRG= 0L=500H

0

50

100

150

200

250

0 200 400 600 800 1000

Eoff

Eon

Ta = 25ºCID= 7AVGS = 18V/0VRG= 0L=500H

0

50

100

150

200

250

300

350

0 5 10 15 20 25 30

Eoff

Eon

Ta = 25ºCVDD= 600VID= 7AVGS = 18V/0VL=500H

Fig.19 Typical Switching Lossvs. Drain - Source Voltage

Sw

itchi

ng E

nerg

y : E

[J

]


Fig.21 Typical Switching Lossvs. External Gate Resistance

Sw

itchi

ng E

nerg

y : E

[J

]

External Gate Resistance : RG []

Sw

itchi

ng E

nerg

y : E

[J

]

Fig.20 Typical Switching Lossvs. Drain Current


10/12 2017.07 - Rev.D


DatasheetSCT2160KE


0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS=0VPulsed


10

100

1000

1 10 100

Ta=25ºCdi / dt = 160A / sVR = 400VVGS = 0VPulsed

Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage

Inve

rse

Dio

de

For

war

d C

urre

nt :

IS

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current

Rev

erse

Rec

over

y T

ime

: trr

[ns]

Inverse Diode Forward Current : IS [A]

11/12 2017.07 - Rev.D


DatasheetSCT2160KE

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

DRIVER MOSFET

RG

D.U.T. LIF

VDD

D.U.T.

90%

90% 90%

10% 10%

50%10%50%

VGS

Pulse width

VDS

ton toff

trtd(on) tftd(off)

VGS

RG

VDS

D.U.T.

ID

RL

VDD

VGS

IG(Const.)

VDS

D.U.T.

ID

RL

VDD

VG

VGS

Charge

Qg

Qgs Qgd

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

DRIVER MOSFET

RG

D.U.T. LIF

VDD

Same type device as D.U.T.

D.U.T.

ID

trr

Irr 100%

Irr

IF

0

Irr 90%

drr / dt

Irr 10%

12/12 2017.07 - Rev.D

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1)

2)

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DatasheetDatasheet

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ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

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